CN113748524A - 热电转换材料、热电转换元件、使用热电转换材料获得电的方法以及输送热的方法 - Google Patents

热电转换材料、热电转换元件、使用热电转换材料获得电的方法以及输送热的方法 Download PDF

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CN113748524A
CN113748524A CN202080030532.3A CN202080030532A CN113748524A CN 113748524 A CN113748524 A CN 113748524A CN 202080030532 A CN202080030532 A CN 202080030532A CN 113748524 A CN113748524 A CN 113748524A
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thermoelectric conversion
conversion material
equal
type
crystal
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玉置洋正
金子由利子
佐藤弘树
菅野勉
H·南
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Panasonic Intellectual Property Management Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/06—Metal silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/8556—Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/60—Compounds characterised by their crystallite size
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/77—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by unit-cell parameters, atom positions or structure diagrams
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/32—Thermal properties
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties

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  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Powder Metallurgy (AREA)
CN202080030532.3A 2019-09-09 2020-07-15 热电转换材料、热电转换元件、使用热电转换材料获得电的方法以及输送热的方法 Pending CN113748524A (zh)

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JP2019163900 2019-09-09
JP2019-163900 2019-09-09
PCT/JP2020/027533 WO2021049166A1 (ja) 2019-09-09 2020-07-15 熱電変換材料、熱電変換素子、熱電変換材料を用いて電力を得る方法及び熱を輸送する方法

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JP (1) JPWO2021049166A1 (https=)
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115786751A (zh) * 2022-11-15 2023-03-14 重庆天齐锂业有限责任公司 锂镁硅合金熔炼方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11976235B2 (en) * 2020-10-27 2024-05-07 Battelle Savannah River Alliance, Llc High temperature thermochemical energy storage materials

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5294503A (en) * 1992-10-13 1994-03-15 The United States Of America As Represented By The National Aeronautics And Space Administration Anode for rechargeable ambient temperature lithium cells
WO1999022410A1 (fr) * 1997-10-24 1999-05-06 Sumitomo Special Metals Co., Ltd. Materiau thermoelectrique transducteur et son procede de fabrication
US20060090787A1 (en) * 2004-10-28 2006-05-04 Onvural O R Thermoelectric alternators and thermoelectric climate control devices with controlled current flow for motor vehicles
WO2008134451A1 (en) * 2007-04-24 2008-11-06 Blacklight Power, Inc. Hydrogen-catalyst reactor
JP2010050185A (ja) * 2008-08-20 2010-03-04 Fdk Corp Ｍｇ金属間化合物及びそれを応用したデバイス
JP2012129516A (ja) * 2010-11-24 2012-07-05 Tohoku Univ ｐ型熱電変換材料及びその製造方法、並びに、熱電変換素子及び熱電変換モジュール
JP2013197550A (ja) * 2012-03-22 2013-09-30 Ngk Insulators Ltd 熱電材料およびその製造方法
WO2017046912A1 (ja) * 2015-09-17 2017-03-23 株式会社日立製作所 熱電変換材料及びこれを用いた熱電変換モジュール
CN108701749A (zh) * 2016-02-24 2018-10-23 三菱综合材料株式会社 镁系热电转换材料的制造方法、镁系热电转换元件的制造方法、镁系热电转换材料、镁系热电转换元件及热电转换装置
JP2018178162A (ja) * 2017-04-05 2018-11-15 トヨタ自動車株式会社 熱電材料の製造方法
CN108878633A (zh) * 2017-05-08 2018-11-23 松下知识产权经营株式会社 津特耳相热电转换材料

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005305394A (ja) * 2004-04-26 2005-11-04 Toyota Central Res & Dev Lab Inc 水素吸蔵材料
JP5274146B2 (ja) * 2008-08-08 2013-08-28 独立行政法人物質・材料研究機構 マグネシウム、珪素、スズからなる熱電半導体およびその製造方法
JP5482229B2 (ja) * 2010-01-25 2014-05-07 株式会社ミツバ 熱電材料およびその製造方法
US8801953B2 (en) * 2010-10-19 2014-08-12 California Institute Of Technology Zintl phases for thermoelectric applications

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5294503A (en) * 1992-10-13 1994-03-15 The United States Of America As Represented By The National Aeronautics And Space Administration Anode for rechargeable ambient temperature lithium cells
WO1999022410A1 (fr) * 1997-10-24 1999-05-06 Sumitomo Special Metals Co., Ltd. Materiau thermoelectrique transducteur et son procede de fabrication
US20060090787A1 (en) * 2004-10-28 2006-05-04 Onvural O R Thermoelectric alternators and thermoelectric climate control devices with controlled current flow for motor vehicles
WO2008134451A1 (en) * 2007-04-24 2008-11-06 Blacklight Power, Inc. Hydrogen-catalyst reactor
JP2010050185A (ja) * 2008-08-20 2010-03-04 Fdk Corp Ｍｇ金属間化合物及びそれを応用したデバイス
JP2012129516A (ja) * 2010-11-24 2012-07-05 Tohoku Univ ｐ型熱電変換材料及びその製造方法、並びに、熱電変換素子及び熱電変換モジュール
JP2013197550A (ja) * 2012-03-22 2013-09-30 Ngk Insulators Ltd 熱電材料およびその製造方法
WO2017046912A1 (ja) * 2015-09-17 2017-03-23 株式会社日立製作所 熱電変換材料及びこれを用いた熱電変換モジュール
CN108701749A (zh) * 2016-02-24 2018-10-23 三菱综合材料株式会社 镁系热电转换材料的制造方法、镁系热电转换元件的制造方法、镁系热电转换材料、镁系热电转换元件及热电转换装置
JP2018178162A (ja) * 2017-04-05 2018-11-15 トヨタ自動車株式会社 熱電材料の製造方法
CN108878633A (zh) * 2017-05-08 2018-11-23 松下知识产权经营株式会社 津特耳相热电转换材料

Non-Patent Citations (7)

* Cited by examiner, † Cited by third party
Title
G. EFFENBERG, S. ILYENKO, MATERIALS SCIENCE INTERNATIONAL TEAM (MSIT): "《Landolt-B》", 31 December 2006, SPRINGER, pages: 327 - 333 *
NIERODA, P；KOLEZYNSKI, A ；OSZAJCA, M ； MILCZAREK, J； WOJCIECHOWSKI, KT: "《Structural and Thermoelectric Properties of Polycrystalline p-Type Mg2-x Li x Si》", 《JOURNAL OF ELECTRONIC MATERIALS》, vol. 45, no. 7, 31 July 2016 (2016-07-31), pages 3418 - 3426 *
TREVOR P. BAILEY ；CTIRAD UHER: "《Potential for superionic conductors in thermoelectric applications》", 《CURRENT OPINION IN GREEN AND SUSTAINABLE CHEMISTRY》, vol. 4, 30 April 2017 (2017-04-30), pages 58 - 63 *
WANARATTIKAN, P； JITTHAMMAPIROM, P；SAKDANUPHAB, R ； SAKULKALAVEK, A: "《Effect of Grain Size and Film Thickness on the Thermoelectric Properties of Flexible Sb2Te3 Thin Films》", 《ADVANCES IN MATERIALS SCIENCE AND ENGINEERING》, vol. 2019, 8 January 2019 (2019-01-08), pages 1 - 7 *
史迅;席丽丽;杨炯;张文清;陈立东;: "热电材料研究中的基础物理问题", 物理, no. 11, 12 November 2011 (2011-11-12) *
周东一;王红梅;: "基于温差电技术的热电材料研究进展", 化工新型材料, no. 09, 15 September 2015 (2015-09-15) *
王超，张蕊，杜欣，张晨贵，栾春红，姜晶，胡强，王军喜，杜志游，李天笑，马铁中，严冬，尹志尧: "《新型热电材料综述》", 《电子科技大学学报》, vol. 46, no. 1, 31 January 2017 (2017-01-31) *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115786751A (zh) * 2022-11-15 2023-03-14 重庆天齐锂业有限责任公司 锂镁硅合金熔炼方法
CN115786751B (zh) * 2022-11-15 2024-01-19 重庆天齐锂业有限责任公司 锂镁硅合金熔炼方法

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US11910713B2 (en) 2024-02-20

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