CN113745085A - Faraday shielding device, plasma etching system and using method thereof - Google Patents

Faraday shielding device, plasma etching system and using method thereof Download PDF

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Publication number
CN113745085A
CN113745085A CN202010470678.1A CN202010470678A CN113745085A CN 113745085 A CN113745085 A CN 113745085A CN 202010470678 A CN202010470678 A CN 202010470678A CN 113745085 A CN113745085 A CN 113745085A
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heating
faraday
shielding plate
heating circuit
faraday shielding
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CN202010470678.1A
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Chinese (zh)
Inventor
郭颂
刘海洋
王铖熠
程实然
刘小波
张军
胡冬冬
许开东
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Beijing Luwen Semiconductor Technology Co ltd
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Beijing Luwen Semiconductor Technology Co ltd
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Priority to CN202010470678.1A priority Critical patent/CN113745085A/en
Publication of CN113745085A publication Critical patent/CN113745085A/en
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00—Details of electric heating devices
    • H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
    • H05B1/0227—Applications
    • H05B1/023—Industrial applications
    • H05B1/0233—Industrial applications for semiconductors manufacturing

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

The invention discloses a Faraday shielding device, a plasma etching system and a using method thereof, wherein the Faraday shielding device comprises a Faraday shielding plate and a heating circuit; the Faraday shield plate comprises a conducting ring and a plurality of conducting petal-shaped parts which are radially and symmetrically connected to the periphery of the conducting ring; and when the heating circuit is used for the etching process, the Faraday shielding plate is electrified and heated. When the etching process is carried out, the heating circuit and the Faraday shielding plate are conducted, so that the electrifying temperature of the Faraday shielding plate is increased, the dielectric window is heated, and the deposition amount of products is reduced; because the Faraday shielding plate is in direct contact with the dielectric window, the heating efficiency is high, the heat loss is less, and the equipment structure is simplified; when the cleaning process is carried out, the heating circuit and the Faraday shielding plate are closed, the Faraday shielding plate is connected with a shielding power supply, and the medium window is cleaned; the output end of the heating power supply is connected to the Faraday shielding plate after being filtered by the filter circuit unit, so that the coupling between the radio frequency coil and the Faraday shielding plate is effectively prevented.

Description

Faraday shielding device, plasma etching system and using method thereof
Technical Field
The invention belongs to the technical field of semiconductor etching, and particularly relates to a Faraday shielding device, a plasma etching system and a using method thereof.
Background
During the etching process, the voltage between different parts of the plasma coil is capacitively coupled to the plasma, and although this coupling promotes ignition and stabilization, the capacitively coupled parts can induce a locally intensified voltage in the reaction chamber, which can accelerate ions away from the plasma to locally affect the dielectric window, resulting in local sputtering damage; in other cases, capacitive coupling may result in localized deposition. Sputtering can lead to damage of the surface coating on the dielectric window, and then particles can fall off and can land on the produced wafer causing defects.
In order to solve the above problems, the prior art adopts the dielectric window heating technology of the plasma etcher as shown in fig. 1, and the main components are as shown in fig. 1, namely, a radio frequency coil 001, a dielectric window 002, a heating net 004, a heat sending fan 005 and an outer shield 006. The radio frequency coil 001 generates plasma to pass through the dielectric window 002 for processing, the heating net 004 generates heat, and the heat is blown to the dielectric window 002 for heating through the heat sending fan 005 according to the direction shown by the arrow in the schematic diagram. The disadvantages of this method are mainly: the fan sends heat to disperse, and the heating efficiency is low; on the other hand, the coil and other electrical elements such as a matcher and the like can be simultaneously heated, so that the electrical element is high in temperature and easy to damage; in order to prevent the high temperature from being generated by the wind heat, the external shield 006 is required to cause high temperature damage to the operator, which results in a complicated structure, occupies extra space and increases cost.
In addition, although the ceramic dielectric window is heated, the deposition amount of products can be reduced, but a part of the products are deposited on the ceramic dielectric window, and the deposition amount is increased to a certain amount after a period of time, so that the etching process is still adversely affected, and in this way, the chamber needs to be disassembled, and the ceramic dielectric window needs to be further removed for manual cleaning.
Disclosure of Invention
In order to solve the problems, the invention provides a Faraday shielding device, a plasma etching system and a using method thereof, wherein the Faraday shielding plate directly contacting with a medium window is electrified to be heated, so that the deposition amount of products is reduced; and the heating efficiency is high, the heat loss is less, and the equipment structure is simplified.
The technical scheme is as follows: the invention provides a Faraday shielding device for heating of a plasma etching system, which comprises a Faraday shielding plate; the Faraday shield plate comprises a conducting ring and a plurality of conducting petal-shaped parts which are radially and symmetrically connected to the periphery of the conducting ring; the faraday shield apparatus further comprises a heating circuit; and when the heating circuit is used for the etching process, the Faraday shielding plate is electrified and heated.
Further, the heating circuit comprises a heating power supply and a filter circuit unit; the output end of the heating power supply is connected to the Faraday shielding plate after being filtered by the filter circuit unit.
Further, the device also comprises a feedback control circuit; the feedback control circuit comprises a temperature sensor, a temperature controller and a solid-state relay; the solid-state relay is arranged on the heating circuit and used for controlling the heating circuit to be opened and closed; the temperature measuring sensor is used for measuring the temperature of the Faraday shielding plate and transmitting data to the temperature controller; and the temperature controller feeds back a signal to control the opening and closing of the solid-state relay according to the set temperature.
Further, the conducting rings are connected with the anode of the heating circuit, and the outer end of each conducting petal-shaped part is connected with the cathode of the heating circuit;
or the conducting rings are connected with the negative electrode of the heating circuit, and the outer end of each conducting petal-shaped part is connected with the positive electrode of the heating circuit.
Further, the conducting ring comprises a plurality of arc sections which are insulated at intervals; each arc section is connected with a plurality of conductive petal-shaped pieces; the outer end of one conductive petal-shaped piece of any one or more arc sections is connected with the anode of the heating circuit; the outer end of the other conductive petal-shaped part of the arc section is connected with the cathode of the heating circuit.
Furthermore, in the arc section, one conductive petal part connected with the anode of the heating circuit and the other conductive petal part connected with the cathode of the heating circuit are respectively positioned at two ends of the arc line of the arc section.
A plasma etching system comprising the faraday shield apparatus described above that can be used for heating.
The plasma etching system also comprises a dielectric window; the Faraday shield plate is integrally sintered in the dielectric window.
A method of using a plasma etching system:
when in etching process, etching reaction gas is introduced into the reaction chamber, the radio frequency power supply is excited to be connected with the radio frequency coil, and plasma is generated to etch the substrate sheet; simultaneously conducting the heating circuit and the Faraday shielding plate to increase the electrifying temperature of the Faraday shielding plate and heat the medium window;
when the cleaning process is carried out, the heating circuit and the Faraday shielding plate are closed; and introducing cleaning reaction gas into the reaction chamber, and connecting the Faraday shielding plate into a shielding power supply to clean the dielectric window. Has the advantages that: when the etching process is carried out, the heating circuit and the Faraday shielding plate are conducted, so that the electrifying temperature of the Faraday shielding plate is increased, the dielectric window is heated, and the deposition amount of products is reduced; because the Faraday shielding plate is in direct contact with the dielectric window, the heating efficiency is high, the heat loss is less, and the equipment structure is simplified;
when the cleaning process is carried out, the heating circuit and the Faraday shielding plate are closed, the Faraday shielding plate is connected with a shielding power supply, and the medium window is cleaned;
the output end of the heating power supply is connected to the Faraday shielding plate after being filtered by the filter circuit unit, so that the coupling between the radio frequency coil and the Faraday shielding plate is effectively prevented, and the interference is generated on the heating current of the coil radio frequency and the Faraday shielding plate.
Drawings
FIG. 1 is a schematic diagram of a prior art dielectric window heating structure for a plasma etcher;
FIG. 2 is a schematic structural view of the present invention;
FIG. 3 is a schematic view of a Faraday shielding apparatus according to the present invention;
FIG. 4 is a flow chart of the process of the present invention.
Detailed Description
Referring to fig. 2, the present invention provides a plasma etching system comprising a reaction chamber 022, a radio frequency coil 001, and a bias electrode 020.
A dielectric window 002 is arranged above the reaction chamber 022, and the radio frequency coil 001 is positioned above the dielectric window 002. The radio frequency coil 001 is tuned by an excitation matching network 010 to supply power through an excitation radio frequency power supply 011.
The bias electrode 020 is located in the reaction chamber 022 and is tuned by the bias radio frequency power supply 021 through the bias matching network 025 to supply power.
The lower end of the reaction chamber 022 is further provided with a vacuum pump 024 and a pressure control valve 023 for maintaining a desired vacuum degree of the reaction chamber 022.
The plasma etching system further comprises a gas source 012 for providing a process gas to the reaction chamber 022; the process gas enters the reaction chamber 022 through the dielectric window 002.
As shown in fig. 3, the plasma etching system further comprises a faraday shield apparatus operable to heat; the faraday shield apparatus includes a faraday shield plate 009. The faraday shield 009 comprises a conductive ring 0092 and a plurality of conductive petals 0091 radially and symmetrically connected to the periphery of the conductive ring 0092. In this embodiment, the faraday shield 009 also provides power through the excitation rf power source 011, tuned by the excitation matching network 010, and serves as a shielding power source. The output of the excitation matching network 010 can be connected to the rf coil 001 or the faraday shield plate 009 through a three-phase switch 026.
During the etching process, the wafer is placed on a bias electrode 020. A plasma processing process reactant gas, such as fluorine, is introduced into the reaction chamber 022 through the gas source 012. A specific pressure of the reaction chamber 022 is maintained by a pressure control valve 023 and a vacuum pump 024. The energized rf power supply 011 is tuned by the energized matching network 010, supplied to the rf coil 001 through the three-phase switch 026, and inductively coupled to generate plasma in the reaction chamber 022 to plasma process the wafer. And stopping the input of the radio frequency power and stopping the input of the reaction gas of the plasma treatment process after the plasma treatment process is finished.
When a cleaning process is required, the substrate sheet is placed on the bias electrode 020. Purge process reactant gases, such as argon, oxygen, and nitrogen trifluoride, are introduced into the reaction chamber 022 by a gas source 012. A specific pressure of the reaction chamber 022 is maintained by a pressure control valve 023 and a vacuum pump 024. The energized rf power supply 011 is tuned through an energized matching network 010 and powered into a faraday shield plate 009, located within, through a three phase switch 026. The power from the faraday shield 009 generates argon ions, etc., which sputter onto the inner wall of the dielectric window 002 and clean the dielectric window 002. And stopping the input of the radio frequency power and the input of the reaction gas of the cleaning process after the cleaning process is finished.
The faraday shield apparatus further comprises a heating circuit. The heating circuit comprises a heating power supply 015, and when the heating power supply 015 is used for an etching process, the Faraday shielding plate 009 is heated by electrifying.
As shown in fig. 4, the specific application method is as follows:
when in etching process, etching reaction gas is introduced into the reaction chamber 022, the radio frequency power supply 011 is excited to be communicated with the radio frequency coil 001, and plasma is generated to etch the substrate sheet; meanwhile, the heating circuit and the Faraday shielding plate 009 are conducted, so that the electrifying temperature of the Faraday shielding plate 009 is raised, the dielectric window 002 is heated, and the deposition amount of the product is reduced; in this embodiment, the faraday shield plate 009 is integrally sintered in the dielectric window 002 to improve the heating efficiency.
When the cleaning process is carried out, the heating circuit and the Faraday shielding plate 009 are closed; cleaning reaction gas is introduced into the reaction chamber 022, and the faraday shield plate 009 is connected to a shield power supply to clean the dielectric window 002.
During the etching process, the excitation radio frequency power supply 011 is tuned through the excitation matching network 010 and supplies power to the radio frequency coil 001 through the three-phase switch 026. In order to prevent the coupling between the rf coil 001 and the faraday shield 009 and affect the rf of the rf coil 001 and the heat generated by the faraday shield 009, the heating circuit of the present invention further includes a filter circuit unit 030. The output end of the heating power source 015 is filtered by the filter circuit unit 030 and then connected to the faraday shield plate 009, so as to effectively prevent the coupling between the rf coil 001 and the faraday shield plate 009.
The plasma etching system also comprises a feedback control circuit; the feedback control circuit comprises a temperature measuring sensor 016, a temperature controller 013 and a solid-state relay 014; the solid-state relay 014 is arranged on the heating circuit and used for controlling the heating circuit to be turned on and off; the temperature measuring sensor 016 is used for measuring the temperature of the Faraday shielding plate 009 and transmitting data to the temperature controller 013; and the temperature controller 013 feeds back signals to control the on and off of the solid-state relay 014 according to the set temperature. When the Faraday shield plate 009 reaches the set high temperature of the temperature controller 013, the feedback signal is turned off by the control circuit of the solid-state relay 014; when the temperature of the faraday shield plate 009 drops below the set low temperature, the temperature sensor 016 detects the temperature drop and transmits data to the temperature controller 013, and the solid state relay 014 controls the circuit to close again to perform heating. So that the faraday shield 009 maintains the proper temperature by the feedback control circuit. For the sake of safety, two sets of temperature sensor 016 and temperature controller 013 can be provided, and the solid-state relay 014 can be controlled in parallel, so that control failure and equipment damage caused by damage of the temperature sensor 016 or the temperature controller 013 can be prevented; the two groups of temperature measuring sensors 016 can measure different positions of the Faraday shielding plate 009, so as to prevent the Faraday shielding plate 009 from unbalanced temperature and local temperature from being too high or too low.
In order to prevent the etching process, the feedback control circuit is coupled to the rf coil 001, and the feedback control circuit is also provided with a filter circuit unit 030.
Specifically, the conductive ring 0092 is connected to the anode of the heating circuit, and the outer end of each conductive petal 0091 is connected to the cathode of the heating circuit; or the conducting rings 0092 are connected with the negative electrode of the heating circuit, and the outer end of each conducting petal-shaped piece 0091 is connected with the positive electrode of the heating circuit. In this connection mode, each of the conductive petals 0091 is current-sharing, and heat generation is more uniform and rapid.
Or, a plurality of fractures 0093 are arranged on the conducting ring 0092 to form a plurality of arc sections which are insulated at intervals; each circular arc segment is connected with a plurality of conductive petals 0091. The outer end of one conductive petal-shaped part 0091 of any one or more arc sections is connected with the anode of the heating circuit; the outer end of the other conductive petal-shaped part 0091 of the arc section is connected with the cathode of the heating circuit. Heating current flows in from the outer end of one conductive petal 0091, flows through the corresponding arc segment, and flows out from the outer end of the other conductive petal 0091.
For extension electric current circulation length, make to generate heat more balanced, in an arc section, connect anodal a conductive petal 0091 of heating circuit with be connected another conductive petal 0091 of heating circuit negative pole is located respectively the pitch arc both ends of arc section.
The connection mode has the advantages that the current circulation path on the Faraday shield plate 009 is small, the distance is short, and the coupling between the Faraday shield plate 009 and the radio frequency coil 001 can be reduced; in addition, the wiring ends are few, the installation is convenient, the equipment structure is simplified, and the equipment space is saved.
In this embodiment, the conducting ring 0092 is provided with a fracture 0093 to form an arc section. The position of the electric wire interface is close to facilitate wiring.

Claims (9)

1. A Faraday shielding apparatus for heating of a plasma etching system comprises a Faraday shielding plate; the Faraday shield plate comprises a conducting ring and a plurality of conducting petal-shaped parts which are radially and symmetrically connected to the periphery of the conducting ring; the method is characterized in that: the faraday shield apparatus further comprises a heating circuit; and when the heating circuit is used for the etching process, the Faraday shielding plate is electrified and heated.
2. The heating faraday shield apparatus of claim 1, wherein: the heating circuit comprises a heating power supply and a filter circuit unit; the output end of the heating power supply is connected to the Faraday shielding plate after being filtered by the filter circuit unit.
3. The heating faraday shield apparatus of claim 2, wherein: the device also comprises a feedback control circuit; the feedback control circuit comprises a temperature sensor, a temperature controller and a solid-state relay; the solid-state relay is arranged on the heating circuit and used for controlling the heating circuit to be opened and closed; the temperature measuring sensor is used for measuring the temperature of the Faraday shielding plate and transmitting data to the temperature controller; and the temperature controller feeds back a signal to control the opening and closing of the solid-state relay according to the set temperature.
4. The heating faraday shield apparatus of the plasma etching system of any of claims 1 to 3, wherein: the conducting rings are connected with the anode of the heating circuit, and the outer end of each conducting petal-shaped part is connected with the cathode of the heating circuit;
or the conducting rings are connected with the negative electrode of the heating circuit, and the outer end of each conducting petal-shaped part is connected with the positive electrode of the heating circuit.
5. The heating faraday shield apparatus of the plasma etching system of any of claims 1 to 3, wherein: the conducting ring comprises a plurality of arc sections which are insulated at intervals; each arc section is connected with a plurality of conductive petal-shaped pieces; the outer end of one conductive petal-shaped piece of any one or more arc sections is connected with the anode of the heating circuit; the outer end of the other conductive petal-shaped part of the arc section is connected with the cathode of the heating circuit.
6. The heating faraday shield apparatus of claim 5, wherein: in the arc section, one conductive petal-shaped piece connected with the anode of the heating circuit and the other conductive petal-shaped piece connected with the cathode of the heating circuit are respectively positioned at two ends of an arc line of the arc section.
7. A plasma etching system, characterized by: comprising a faraday shield apparatus according to any of claims 1 to 6, usable for heating.
8. The plasma etching system of claim 7, wherein: also includes a dielectric window; the Faraday shield plate is integrally sintered in the dielectric window.
9. A method of using a plasma etching system, comprising:
when in etching process, etching reaction gas is introduced into the reaction chamber, the radio frequency power supply is excited to be connected with the radio frequency coil, and plasma is generated to etch the substrate sheet; simultaneously conducting the heating circuit and the Faraday shielding plate to increase the electrifying temperature of the Faraday shielding plate and heat the medium window;
when the cleaning process is carried out, the heating circuit and the Faraday shielding plate are closed; and introducing cleaning reaction gas into the reaction chamber, and connecting the Faraday shielding plate into a shielding power supply to clean the dielectric window.
CN202010470678.1A 2020-05-28 2020-05-28 Faraday shielding device, plasma etching system and using method thereof Withdrawn CN113745085A (en)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020100557A1 (en) * 2001-01-29 2002-08-01 Applied Materials, Inc. ICP window heater integrated with faraday shield or floating electrode between the source power coil and the ICP window
CN104412717A (en) * 2012-07-20 2015-03-11 应用材料公司 Symmetrical inductively coupled plasma source with symmetrical flow chamber
US20150191823A1 (en) * 2014-01-06 2015-07-09 Applied Materials, Inc. High efficiency inductively coupled plasma source with customized rf shield for plasma profile control
CN110223904A (en) * 2019-07-19 2019-09-10 江苏鲁汶仪器有限公司 A kind of plasma process system with Faraday shield device
CN110301030A (en) * 2017-02-20 2019-10-01 马特森技术有限公司 It is controlled using the temperature for the temperature control component for being couple to Faraday shield body
CN211957597U (en) * 2020-05-28 2020-11-17 北京鲁汶半导体科技有限公司 Plasma etching system and Faraday shielding device capable of being used for heating

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020100557A1 (en) * 2001-01-29 2002-08-01 Applied Materials, Inc. ICP window heater integrated with faraday shield or floating electrode between the source power coil and the ICP window
CN104412717A (en) * 2012-07-20 2015-03-11 应用材料公司 Symmetrical inductively coupled plasma source with symmetrical flow chamber
US20150191823A1 (en) * 2014-01-06 2015-07-09 Applied Materials, Inc. High efficiency inductively coupled plasma source with customized rf shield for plasma profile control
CN110301030A (en) * 2017-02-20 2019-10-01 马特森技术有限公司 It is controlled using the temperature for the temperature control component for being couple to Faraday shield body
CN110223904A (en) * 2019-07-19 2019-09-10 江苏鲁汶仪器有限公司 A kind of plasma process system with Faraday shield device
CN211957597U (en) * 2020-05-28 2020-11-17 北京鲁汶半导体科技有限公司 Plasma etching system and Faraday shielding device capable of being used for heating

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Application publication date: 20211203