CN113568245A - Silicon-based erbium-ytterbium co-doped polymer green light optical waveguide amplifier and preparation method thereof - Google Patents
Silicon-based erbium-ytterbium co-doped polymer green light optical waveguide amplifier and preparation method thereof Download PDFInfo
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- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 claims description 14
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- CKLHRQNQYIJFFX-UHFFFAOYSA-K ytterbium(III) chloride Chemical compound [Cl-].[Cl-].[Cl-].[Yb+3] CKLHRQNQYIJFFX-UHFFFAOYSA-K 0.000 claims description 3
- PCMOZDDGXKIOLL-UHFFFAOYSA-K yttrium chloride Chemical compound [Cl-].[Cl-].[Cl-].[Y+3] PCMOZDDGXKIOLL-UHFFFAOYSA-K 0.000 claims description 3
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 claims description 2
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/39—Non-linear optics for parametric generation or amplification of light, infrared or ultraviolet waves
- G02F1/395—Non-linear optics for parametric generation or amplification of light, infrared or ultraviolet waves in optical waveguides
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
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- Optical Integrated Circuits (AREA)
Abstract
A silicon-based erbium-ytterbium co-doped polymer green light optical waveguide amplifier and a preparation method thereof belong to the technical field of polymer optical waveguide amplifier preparation. The silicon substrate-doped reverse ridge waveguide structure sequentially comprises a silicon substrate, a lower cladding layer, a core layer and an upper cladding layer, wherein the lower cladding layer is made of silicon dioxide, a plurality of strip waveguide grooves are formed in the lower cladding layer through etching technology, the core layer is obtained by filling a core layer material in the strip waveguide grooves and on the lower cladding layer in a spin coating mode, the reverse ridge waveguide structure is formed, and the core layer material is NaYF with a surface modified by doping oleic acid4:Er3+,Yb3+And (3) a polymeric photoresist material of nanoparticles, wherein the refractive index of the core layer is greater than the refractive indices of the lower cladding layer and the upper cladding layer. The preparation method of the amplifier is simple and low in price, does not need expensive thick film growth, ion implantation and other processes, is easy to control the refractive index and the thickness of the waveguide core layer, and can realize the preparation of the optical waveguide amplifier without a high-temperature environment.
Description
Technical Field
The invention belongs to the technical field of preparation of polymer optical waveguide amplifiers, and particularly relates to a silicon-based erbium-ytterbium co-doped polymer green light optical waveguide amplifier and a preparation method thereof.
Background
The erbium-ytterbium co-doped optical waveguide amplifier is an important optical element, is an important component in an optical communication network, is easy to integrate with optical devices such as an optical switch, an optical multiplexer, an arrayed waveguide grating and the like to amplify optical signals or compensate loss during optical transmission, and is a key technology for solving optical chip integration and optical interconnection.
The Fiber To The Home (FTTH) communication mode is distinguished in the communication network by its advantages of large bandwidth, high speed, high stability, high security, etc. Plastic optical fibers have significant advantages in short-distance high-speed communication networks, have large bandwidth, strong bending capability, large core diameter, easy processing and low price, and are considered to be high-quality fiber-to-the-home carriers. The plastic optical fiber has a low-loss window near the wavelengths of visible light of 510 nm-580 nm and 650nm, is suitable for being developed into a communication window, and has good application prospect. Meanwhile, the visible light wave band emitted by the LED used in the visible light communication system is 380 nm-780 nm, and the visible light communication system and the fiber-to-the-home system are fused, so that the system is the most ideal short-distance wireless access scheme.
The optical amplifier is a necessary device for fiber to the home, can solve the problem of optical attenuation in optical network transmission, breaks the distance limit and realizes the all-optical transmission. The erbium-doped optical amplifier does not need the traditional photoelectric optical conversion and has higher amplification efficiency. Commonly used erbium-doped optical amplifiers include erbium-doped fiber amplifiers (EDFAs) and erbium-doped optical waveguide amplifiers (EDWA). The erbium-doped optical waveguide amplifier is more suitable for short-distance all-optical communication, has small volume, easy integration and low cost, and the doping concentration of erbium ions is two orders of magnitude greater than that of the erbium-doped optical fiber amplifier. The erbium-ytterbium co-doped optical waveguide amplifier (EYCDWA) is distinguished in the erbium-doped optical waveguide amplifier, the introduction of ytterbium ions as a sensitizer reduces the quenching phenomenon when erbium ions are doped at high concentration, and the performance of the amplifier is obviously improved. The research of the erbium-ytterbium co-doped green light optical waveguide amplifier is of great significance to the perfection of both the fiber-to-the-home system and the visible light communication system.
The silicon-based erbium-ytterbium co-doped polymer green light optical waveguide amplifier adopts the erbium-ytterbium co-doped polymer as the core layer and the silicon dioxide as the lower cladding layer, can play an extremely important role in developing visible light communication and the application of plastic optical fibers used by fiber-to-the-home, and is expected to be applied in the large scale of the photonic integration industry.
Disclosure of Invention
The invention aims to provide a silicon-based erbium ytterbium co-doped polymer green light optical waveguide amplifier and a preparation method thereof for the application of a plastic optical fiber in an optical fiber-to-the-home system and the development of a visible light communication system.
The method has the advantages of simple process, low price, no need of expensive thick film growth, ion implantation and other processes, easy control of the refractive index and the thickness of the waveguide core layer, and realization of the preparation of the optical waveguide amplifier without a high-temperature environment.
The invention relates to a silicon-based erbium-ytterbium co-doped polymer green light optical waveguide amplifier, which is shown in a figure 3(F), and sequentially consists of a silicon substrate (1), a lower cladding (2), a core layer (5) and an upper cladding (6) from bottom to top, and is characterized in that: the lower cladding (2) is made of silicon dioxide, a plurality of strip waveguide grooves (4) are obtained on the lower cladding (2) through etching technology, a core layer material is filled in the strip waveguide grooves (4) and on the lower cladding (2) in a spin coating mode to obtain a core layer (5) to form an inverted ridge type waveguide structure, and the core layer material is NaYF with a surface modified by doping oleic acid4:Er3+,Yb3+Nano-particle polymer photoresist materials (including SU-82002, SU-82005, EpoCore, EpoClad, etc.) ultraviolet negative tone photoresist material insoluble in acetone solvent after curing by ultraviolet irradiation and heatingAnd the upper cladding layer (6) is made of an organic polymer material with good transparency, such as polymethyl methacrylate (PMMA), and the refractive index of the core layer (5) is larger than that of the lower cladding layer (2) and the upper cladding layer (6).
The silicon-based erbium-ytterbium co-doped polymer green light optical waveguide amplifier is used for amplifying green light with the wavelength of 532 nm.
The upper cladding material and the core layer material used in the invention are both in a liquid state before spin coating, the core layer material generates photochemical reaction after ultraviolet exposure to generate strong acid, and then generates crosslinking reaction in the middle baking process to enhance the stability of the material.
The core layer material adopted by the invention is NaYF doped with oleic acid surface modification4:Er3+,Yb3+A nanoparticulate organic polymeric photoresist material. In the erbium ion energy level system, the pump light of 976nm can realize2H11/2To4I15/2Upconversion luminescence at a wavelength of 532nm in energy level. The introduction of ytterbium ion as sensitizer can improve the absorption efficiency of 976nm pump light, effectively transfer the absorbed energy to erbium ion, make up for the defect of small absorption section of erbium ion, prevent the quenching effect of erbium ion, and improve the absorption utilization efficiency of pump light. The 532nm wavelength is in accordance with the low loss region of the plastic optical fiber, and also belongs to the wavelength range of visible light communication.
NaYF with surface modified by oleic acid4:Er3+,Yb3+The synthesis process of the nano particles comprises the following steps: to 2mmol of rare earth material (ErCl therein)3·6H2The weight percentage of O substance is 2% -5%, YbCl3·6H218-20% of O substance, YCl3·6H275-80% of O substance), adding 12mL of oleic acid and 30mL of octadecene, heating the reaction system to 140-160 ℃ under the conditions of introducing argon and stirring, keeping the temperature for 50-70 minutes, and then cooling to room temperature to obtain a solution A; then 5mmol of NaOH and 8mmol of NH4F was dissolved in 10mL and 20mL of methanol, respectively, to obtain NaOH and NH4The methanol solution of F is respectively and slowly dripped into the solution A, the reaction system is heated to 60-80 ℃ under the condition of argon gas introduction and stirringKeeping for 50-70 minutes to completely evaporate the methanol; raising the reaction temperature to 300-320 ℃, keeping the temperature for 25-35 minutes, growing the nanocrystalline at high temperature, and finally cooling to room temperature to obtain a solution B; centrifugally washing the obtained solution B with ethanol and cyclohexane for 3-5 times respectively, and drying a centrifugal product to obtain the NaYF modified by the surface of oleic acid4:Er3+,Yb3+And (3) nanoparticles.
The core layer material used in the invention is NaYF with the surface modified by 0.3-0.4 mmol of oleic acid4:Er3+,Yb3+Dissolving the nano particles in 1-2 mL of toluene, adding SU-82002, SU-82005, EpoCore or EpoClad photoresist which is 4-6 times of the mass of the solution, and ultrasonically stirring for 5-10 hours at room temperature to fully dissolve the nano particles to obtain the NaYF with the surface modified by the doped oleic acid4:Er3+,Yb3+A nanoparticle in organic polymer photoresist solution.
The upper cladding material adopted by the invention is prepared by mixing polymethyl methacrylate (PMMA) powder and cyclopentanone in a ratio of 1: 8-10, continuously stirring for 18-22 hours at constant temperature on a heating and stirring table at the temperature of 30-40 ℃, and fully dissolving to ensure that the viscosity of each part of the solution is uniform to obtain the cyclopentanone solution of polymethyl methacrylate.
As shown in fig. 3, the preparation method of the silicon-based erbium ytterbium co-doped polymer green light optical waveguide amplifier of the present invention comprises the following steps:
A. selecting a wafer with 5-10 mu m thick silicon dioxide growing on a silicon substrate, taking the silicon dioxide as a lower cladding (2), cleaning the surface of the wafer, namely wiping the surface of the silicon dioxide with acetone, removing the acetone on the surface of the silicon dioxide with ethanol, removing the ethanol on the surface of the silicon dioxide with deionized water, and finally removing the residual deionized water on the surface of the silicon dioxide with an air gun;
B. spin-coating a layer of SU-82002 or SU-82005 photoresist layer (3) on the lower cladding (2) at a rotating speed of 3000-5000 rpm, and pre-baking on a hot plate (keeping the temperature at 60-70 ℃ for 10-20 minutes, and then heating to 90-110 ℃ for 20-30 minutes);
C. carrying out ultraviolet exposure on the photoresist layer (3) for 10-25 seconds by using a mask plate with a plurality of strip-shaped structures with the widths of 4-6 microns to enable the exposed parts to generate photochemical reaction, then carrying out postbaking on a hot plate (keeping the temperature at 65-75 ℃ for 10-20 minutes, then heating to 95-115 ℃ for 20-30 minutes), then cooling to room temperature and developing, removing unexposed photoresist and exposing the silicon dioxide lower cladding layer (2) to be etched;
D. then, dry etching is carried out on the silicon dioxide lower cladding layer (2) to be etched through inductively coupled plasma etching (ICP), and CF is introduced4、C4F8Or CHF3Etching gas, introducing additional gas O2Etching to obtain a strip waveguide groove (4), wherein the depth of the groove is 3-6 mu m, the width of the groove is 4-6 mu m, and then washing the exposed photoresist layer (3) by using an acetone solvent;
E. doping NaYF with oleic acid surface modification4:Er3+,Yb3+Coating an organic polymer photoresist solution of nanoparticles serving as a core layer material in a strip waveguide groove (4) and on a lower cladding (2) at a rotating speed of 3000-5000 revolutions per second, performing pre-baking on a hot plate (keeping the temperature at 60-70 ℃ for 10-20 minutes, then heating to 90-110 ℃ for 20-30 minutes), exposing the device under an ultraviolet lamp for 10-25 seconds to enable the core layer material to generate a photochemical reaction, performing post-baking on the hot plate (keeping the temperature at 65-75 ℃ for 10-20 minutes, then heating to 95-115 ℃ for 20-30 minutes), and obtaining an inverted ridge waveguide core layer (5); wherein the thickness of the waveguide core layer obtained on the lower cladding layer (2) is 1-2 μm;
F. and (3) coating a cyclopentanone solution of polymethyl methacrylate on the core layer (5) in a spinning mode, and then curing for 3-5 hours at 120-150 ℃ to obtain an upper cladding layer (6) with the thickness of 3-5 mu m, thereby preparing the silicon-based erbium-ytterbium co-doped polymer green light optical waveguide amplifier.
The optical waveguide device has the advantages of simple preparation process, low preparation cost, easy integration, easy adjustment of refractive index difference, good gain characteristic and important application prospect.
In conclusion, NaYF with surface modified by doped oleic acid is adopted4:Er3+,Yb3+The silicon-based erbium-ytterbium co-doped polymer green light optical waveguide amplifier is prepared by taking organic polymer photoresist of nano particles as a core layer material, the preparation method is simple, the price is low, expensive thick film growth, ion implantation and other processes are not needed, the refractive index and the thickness of the waveguide core layer are easy to control, and the preparation of the optical waveguide amplifier can be realized without a high-temperature environment. The erbium ion doped in the invention has high concentration, is easy to integrate, can play an extremely important role in developing visible light communication and the application of plastic optical fibers used by the optical fibers to the home, and is expected to be applied in the large scale of the photonic integration industry.
Drawings
FIG. 1: NaYF with surface modified by oleic acid4:Er3+,Yb3+An absorption spectrum of the nanoparticles;
FIG. 2: NaYF modified by oleic acid surface under excitation of 976nm pump light4:Er3+,Yb3+Emission spectra of the nanoparticles;
FIG. 3: the process flow schematic diagram of the silicon-based erbium-ytterbium co-doped polymer green light optical waveguide amplifier prepared by the invention;
FIG. 4: the optical field distribution of 532nm signal light in the inverted ridge waveguide of the optical waveguide amplifier is realized;
FIG. 5: the invention relates to a cross-sectional microscopic picture of a silicon-based erbium-ytterbium co-doped polymer green light optical waveguide amplifier;
fig. 6 (a): when 976nm pump light with different powers is input into the amplifier, the luminous intensity of 532nm wavelength is obtained;
fig. 6 (b): the amplifier of the invention has a curve of gain variation with pump light power when different light power signal rates are input.
As shown in figure 1, the oleic acid surface modified NaYF prepared by the invention4:Er3+,Yb3+The nano-particles have obvious absorption at the wavelengths of 521nm, 654nm and 976nm and respectively correspond to the ground state of erbium ions4I15/2Energy level to excited state2H11/2、4F9/2And4I11/2transition absorption of energy level, addition of ytterbium ion as sensitizer and increaseThe absorption cross section at the wavelength of 976nm is enlarged, and the corresponding ytterbium ion is changed from the ground state2F7/2To an excited state2F5/2The transition absorption of the energy level enables the material to have higher absorption and utilization efficiency for 976nm pump light.
As shown in FIG. 2, the NaYF surface-modified by oleic acid prepared by the invention is pumped by pump light with a wavelength of 976nm4:Er3+,Yb3+The nano-particles have a strong emission peak near 532nm wavelength, and the energy level of the corresponding erbium ions from the excited state2H11/2To the ground state energy level4I15/2Radiation transition of (2).
As shown in fig. 4, when the groove depth of the core layer is 4 μm and the groove width is 5 μm, the optical field distribution of the 532nm wavelength signal light propagating in the core layer is well limited in the waveguide core layer, and the optical power ratio is 85%.
FIG. 5 shows a cross-sectional photomicrograph of the prepared Si-based erbium-ytterbium co-doped polymer green light optical waveguide amplifier, in which the depth of the prepared groove is 4 μm, the width is 5 μm, and the thickness of the core layer slab waveguide is 1.5 μm.
As shown in fig. 6(a), in the optical power value displayed on the spectrometer when the optical power of the 532nm wavelength signal is 0.1mW and the pump optical power of 0mW, 100mW, 200mW and 300mW is added, the optical power at the 532nm wavelength is gradually increased with the increase of the pump optical power on the waveguide with the length of 8 mm.
As shown in fig. 6(b), the variation of gain with pump power is shown when the input signal optical power is 0.1mW, 0.5mW, 1mW and 2mW on the waveguide with the length of 8 mm. The test result shows that when the signal light power is fixed, the gain can be increased along with the increase of the pump light power; when the power of the pump light is fixed, the smaller the power of the signal light is, the larger the gain is obtained; when the signal light power was 0.1mW and the pump light power was 300mW, the maximum gain was measured to be 4.3 dB.
Detailed Description
Example 1:
NaYF with surface modified by oleic acid4:Er3+,Yb3+The basic synthesis process of the nanoparticles is as follows: weighing 2mmol of rare earth materialMaterial (0.04mmol ErCl)3·6H2O，0.36mmol YbCl3·6H2O and 1.6mmol YCl3·6H2O) is put into a clean three-neck flask with a stirrer, 12mL of oleic acid and 30mL of octadecene are weighed and added into the three-neck flask, the three-neck flask is put into a reaction system, argon is kept continuously introduced into the system, the stirrer is continuously stirred, the flask is heated to 160 ℃ and kept for 60 minutes, and then the heating is closed and the flask is cooled to the room temperature. 5mmol of NaOH and 8mmol of NH4And F is dissolved in 10mL and 20mL of methanol respectively, the two solutions are slowly dripped into a three-neck flask, the temperature is raised to 60 ℃, and stirring is continuously carried out for one hour to ensure that all the methanol is evaporated. The reaction temperature is raised to 305 ℃ and kept for 25 minutes, so that the nanocrystalline grows at high temperature, and finally the temperature is reduced to room temperature, and the operation is finished. Taking out the solution, centrifugally washing the solution for three times by using ethanol and cyclohexane, reserving the centrifuged solid, and drying the solid by using an oven to obtain the NaYF with the surface modified by the oleic acid4:Er3+,Yb3+The nano-particles comprise 2% of erbium ions, 18% of ytterbium ions and 2mmol of rare earth elements.
The core layer material adopted by the invention is NaYF with 0.3mmol of oleic acid surface modified4:Er3+,Yb3+Putting the nano-particle powder into a cleaned glass bottle, adding 2mL of toluene solution into the glass bottle, putting the glass bottle into an ultrasonic machine, completely dissolving the nano-particles into the toluene solution, sucking 1g of the solution from the glass bottle, putting the solution into a cleaned weighing bottle, adding 4g of SU-82002 photoresist into the weighing bottle, wrapping the weighing bottle with tinfoil in a dark place, putting the weighing bottle into the ultrasonic machine at room temperature, and performing ultrasonic treatment for 5 hours to uniformly disperse the nano-particles in the solution to obtain the oleic acid surface-modified NaYF4:Er3+,Yb3+The core layer material of the SU-8 photoresist core layer material solution of the nano particles has a refractive index of 1.63 at 532 nm.
The upper cladding material adopted by the invention is prepared by mixing polymethyl methacrylate powder and cyclopentanone solution in a proportion of 1: 9, mixing by mass: that is, 3g of polymethyl methacrylate powder and 27g of cyclopentanone were added to a 100mL conical flask, and the mixture was stirred at a constant temperature on a heating and stirring table at 35 ℃ for 20 hours to dissolve sufficiently and make the viscosity of each part of the solution uniform, and the refractive index of the clad material at a wavelength of 532nm was measured to be 1.49.
Example 2:
the preparation method of the silicon-based erbium ytterbium co-doped polymer green light optical waveguide amplifier comprises the following steps: as shown in fig. 3, the specific description is:
A. selecting a wafer with 10 mu m thick silicon dioxide grown on a silicon substrate, taking the silicon dioxide as a lower cladding (2), cleaning the surface of the wafer, namely wiping the surface of the silicon dioxide by using acetone, removing the acetone on the surface of the silicon dioxide by using ethanol, removing the ethanol on the surface of the silicon dioxide by using deionized water, and finally removing the residual deionized water on the surface of the silicon dioxide by using an air gun.
B. An SU-82005 photoresist layer (3) was spin-coated on the lower cladding layer (2) at 3000 rpm, and pre-baked on a hot plate (60 ℃ for 10 minutes, then heated to 90 ℃ for 20 minutes).
C. The photoresist layer (3) was exposed to ultraviolet light for 10 seconds using a mask having a plurality of stripe structures of 5 μm width to cause photochemical reaction at the exposed portions, and then post-baked on a hot plate (at 65 ℃ for 10 minutes, then heated to 95 ℃ for 20 minutes), cooled to room temperature and developed to expose the portions of the silicon dioxide to be etched.
D. Then, the lower cladding (2) is subjected to dry etching by Inductively Coupled Plasma (ICP), and CF is introduced4And CHF4For etching gas, an additional gas O is introduced2And etching to obtain a strip waveguide groove (4), wherein the depth of the groove is 4 mu m, and the width of the groove is 5 mu m. The photoresist layer (3) is then washed away using an acetone solvent.
E. Doping NaYF with oleic acid surface modification4:Er3+,Yb3+Spin-coating organic polymer photoresist solution of nanoparticles as core layer material on the lower cladding (2) and in the strip waveguide groove (4) at 3000 r/s, prebaking on a hot plate (60 deg.C for 10 min, heating to 90 deg.C for 20 min), and exposing the device under an ultraviolet lamp for 15 s to allow the core layer material to developPerforming photochemical reaction, and then performing postbaking on a hot plate (keeping the temperature at 65 ℃ for 10 minutes, and then heating to 95 ℃ for 20 minutes) to obtain an inverted ridge waveguide core layer (5); the thickness of the core layer obtained on the under clad layer (2) was 1.5 μm.
F. And (3) spin-coating a polymer material solution on the core layer (5), and curing at 120 ℃ for 3 hours to obtain an upper cladding layer (6) with the thickness of 5 mu m, thereby preparing the silicon-based erbium-ytterbium co-doped polymer green light optical waveguide amplifier.
Claims (8)
1. A silicon-based erbium-ytterbium co-doped polymer green light optical waveguide amplifier is sequentially composed of a silicon substrate (1), a lower cladding (2), a core layer (5) and an upper cladding (6) from bottom to top, and is characterized in that: the lower cladding (2) is made of silicon dioxide, a plurality of strip waveguide grooves (4) are obtained on the lower cladding (2) through etching technology, and a core layer material is filled in the strip waveguide grooves (4) and on the lower cladding (2) through a spin coating mode to obtain a core layer (5) so as to form an inverted ridge waveguide structure; the core layer material is NaYF with surface modified by doping oleic acid4:Er3+,Yb3+A nanoparticle polymer photoresist material, the polymer photoresist material being SU-82002, SU-82005, EpoCore or EpoClad; the upper cladding material is polymethyl methacrylate; the refractive index of the core layer (5) is larger than the refractive indices of the lower cladding layer (2) and the upper cladding layer (6).
2. The silicon-based erbium ytterbium co-doped polymer green optical waveguide amplifier of claim 1, wherein: adding 12mL of oleic acid and 30mL of octadecene into 2mmol of rare earth material, heating a reaction system to 140-160 ℃ under the conditions of introducing argon and stirring, keeping the temperature for 50-70 minutes, and then cooling to room temperature to obtain a solution A; then 5mmol of NaOH and 8mmol of NH4F was dissolved in 10mL and 20mL of methanol, respectively, to obtain NaOH and NH4Respectively and slowly dripping the methanol solution of the F into the solution A, heating the reaction system to 60-80 ℃ under the condition of introducing argon gas and stirring, and keeping the temperature for 50-70 minutes to completely evaporate the methanol; raising the reaction temperature to 300-320 ℃, keeping the temperature for 25-35 minutes, growing the nanocrystalline at high temperature, and finally cooling to room temperature to obtain a solution B; will obtainThe solution B is centrifugally washed for 3-5 times by using ethanol and cyclohexane respectively, and the centrifugal product is dried to obtain the NaYF modified by the surface of oleic acid4:Er3+,Yb3+A nanoparticle; ErCl in rare earth material3·6H2The weight percentage of O substance is 2% -5%, YbCl3·6H218-20% of O substance, YCl3·6H2The percentage of the O substance is 75 to 80 percent.
3. The silicon-based erbium ytterbium co-doped polymer green optical waveguide amplifier of claim 1, wherein: is NaYF surface-modified by 0.3-0.4 mmol of oleic acid4:Er3+,Yb3+Dissolving the nanoparticles in 1-2 mL of toluene, adding SU-82002, SU-82005, EpoCore or EpoClad photoresist which is 4-6 times of the mass of the solution, and ultrasonically stirring at room temperature for 5-10 hours to fully dissolve the nanoparticles to obtain the NaYF doped with oleic acid surface modification4:Er3+,Yb3+A nanoparticle in organic polymer photoresist solution.
4. The silicon-based erbium ytterbium co-doped polymer green optical waveguide amplifier of claim 1, wherein: the thickness of the lower cladding (2) is 5-10 μm; the depth of the strip-shaped waveguide groove (4) is 3-6 mu m, and the width of the strip-shaped waveguide groove is 4-6 mu m; the thickness of the waveguide core layer obtained on the lower cladding (2) is 1-2 mu m; the thickness of the upper cladding (6) is 3 to 5 μm.
5. The silicon-based erbium ytterbium co-doped polymer green optical waveguide amplifier of claim 1, wherein: for amplifying green signal light with a wavelength of 532 nm.
6. The method for preparing a silica-based erbium ytterbium co-doped polymer green light optical waveguide amplifier as claimed in any one of claims 1 to 5, comprising the steps of:
A. selecting a wafer with silicon dioxide grown on a silicon substrate, taking the silicon dioxide as a lower cladding (2), cleaning the surface of the wafer, namely wiping the surface of the silicon dioxide with acetone, removing the acetone on the surface of the silicon dioxide with ethanol, removing the ethanol on the surface of the silicon dioxide with deionized water, and finally removing the residual deionized water on the surface of the silicon dioxide with an air gun;
B. spin-coating a layer of SU-82002 or SU-82005 photoresist layer (3) on the lower cladding (2) at a rotating speed of 3000-5000 rpm, and performing pre-baking on a hot plate;
C. carrying out ultraviolet exposure on the photoresist layer (3) for 10-25 seconds by using a mask plate with a plurality of strip-shaped structures, enabling the exposed part to generate photochemical reaction, carrying out postbaking on a hot plate, then cooling to room temperature, carrying out development, removing unexposed photoresist, and exposing the silicon dioxide lower cladding layer (2) to be etched;
D. then, dry etching is carried out on the silicon dioxide lower cladding layer (2) to be etched through inductively coupled plasma etching (ICP), and CF is introduced4、C4F8Or CHF3Etching gas, introducing additional gas O2Etching to obtain a strip waveguide groove (4), and then washing the exposed photoresist layer (3) by using an acetone solvent;
E. doping NaYF with oleic acid surface modification4:Er3+,Yb3+Coating an organic polymer photoresist solution of nanoparticles serving as a core layer material in a rotating speed of 3000-5000 revolutions per second in a strip waveguide groove (4) and on a lower cladding (2) in a rotating mode, carrying out pre-drying on a hot plate, exposing a device under an ultraviolet lamp for 10-25 seconds to enable the core layer material to generate a photochemical reaction, and carrying out post-drying on the hot plate to obtain an inverted ridge type waveguide core layer (5);
F. and (3) spinning a cyclopentanone solution of polymethyl methacrylate on the core layer (5), and curing at 120-150 ℃ for 3-5 hours to obtain an upper cladding layer (6), thereby preparing the silicon-based erbium-ytterbium co-doped polymer green light optical waveguide amplifier.
7. The method of claim 6, wherein the silicon-based erbium ytterbium co-doped polymer green optical waveguide amplifier comprises: the pre-drying is to keep the temperature at 60-70 ℃ for 10-20 minutes, then heat up to 90-110 ℃ and keep the temperature for 20-30 minutes; and the postbaking is to keep the temperature at 65-75 ℃ for 10-20 minutes, then to heat to 95-115 ℃ and keep the temperature for 20-30 minutes.
8. The method of claim 6, wherein the silicon-based erbium ytterbium co-doped polymer green optical waveguide amplifier comprises: mixing polymethyl methacrylate powder and cyclopentanone in a ratio of 1: 8-10, continuously stirring for 18-22 hours at constant temperature on a heating and stirring table at the temperature of 30-40 ℃, and fully dissolving to ensure that the viscosity of each part of the solution is uniform to obtain the cyclopentanone solution of polymethyl methacrylate.
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