CN113340470A - Temperature sensor and on-chip high-precision calibration method thereof - Google Patents
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Abstract
The invention discloses a temperature sensor and an on-chip high-precision calibration method thereof, wherein the on-chip high-precision calibration method of the temperature sensor comprises the following steps: respectively determining a first voltage signal V1A second voltage signal V2A first order linear expression with a temperature value T; according to the first voltage signal V1The second voltage signal V2Deducing a relational expression of the temperature value T, the quantization ratio Y and the calibration parameter; multiplexing temperature sensors, measuring two temperatures T1、T2Said first voltage signal V1The second voltage signal V2And (4) calculating to obtain an accurate value of the calibration parameter, and completing on-chip calibration of the temperature sensor.
Description
Technical Field
The invention relates to the technical field of integrated circuits, in particular to a temperature sensor and an on-chip high-precision calibration method thereof.
Background
Since CMOS temperature sensors are widely used and different application scenarios are diverse, various challenges are presented to the design of temperature sensors. In mass production, the parameters of the CMOS temperature sensors in different batches are different due to unavoidable process variations, and even different chips in the same batch are different. In order to ensure sufficient temperature measurement accuracy and yield, the temperature sensors often need to be factory calibrated one by one. However, the accuracy of the calibration of the temperature sensor depends on the accuracy of the reference temperature. On one hand, the ambient temperature of the temperature sensor is kept stable when the calibration is needed, on the other hand, the temperature value of the current calibration environment needs to be accurately acquired, and both the temperature value and the temperature value greatly increase the calibration cost of the large-batch chips.
The current testing method, in order to ensure the accuracy, needs a plurality of temperature point measurements, such as the patent application with application number CN201310211368.8, a temperature calibration device and method for CMOS temperature sensor, in this patent, two-temperature calibration is implemented, in which the output of the preset temperature sensor is completely linear with temperature, and then the slope and intercept of the first-order linear function of the output varying with temperature are solved, but obviously, this assumption is not true.
On-chip CMOS temperature sensor usually uses parasitic PNP triode in CMOS process as temperature sensing element to generate VBEAnd Δ VBETwo voltage signals which are related to the temperature, and the temperature measurement is carried out based on the two voltage signals which are approximately in linear relation with the temperature. The general scheme is to quantify a quantity varying with temperature by using a fixed voltage as a reference source, wherein the fixed voltage reference is required not to vary with process fluctuation, power supply voltage, temperature and other external conditions, and VBEAnd Δ VBEMay be used to generate this reference voltage. Due to variations in process parameters and VBETemperature characteristic of itself, VBEAnd Δ VBEThe proportional value Y of the temperature coefficient may vary with temperature, which may cause calibration errors, which may be unacceptable in temperature sensor applications requiring relatively high accuracy.
Disclosure of Invention
The present invention has been made in view of the above problems, and it is an object of the present invention to provide a temperature sensor and an on-chip high-precision calibration method thereof, which can determine the first voltage signal V1A second voltage signal V2The accurate calibration values of the slope and the intercept in the first-order linear expression can also accurately determine each calibration parameter of the temperature value T relational expression in the temperature sensor, and the calibration scheme of the CMOS temperature sensor with higher precision is realized.
In one embodiment of the present invention, there is provided an on-chip high-precision calibration method of a temperature sensor, including:
step S1: respectively determining a first voltage signal V1A second voltage signal V2A first order linear expression with a temperature value T; wherein the first voltage signal V1And a second voltage signal V2Respectively corresponding to different temperature coefficients;
step S2: according to the first voltage signal V1The second voltage signal V2Deducing a relational expression of the temperature value T, the quantization ratio Y and the calibration parameter; wherein the quantization ratio Y is the quantized second voltage signal V2The first voltage signal V1The ratio of (A) to (B);
step S3: multiplexing temperature sensors, measuring two temperatures T1、T2Said first voltage signal V1The second voltage signal V2And (4) calculating to obtain an accurate value of the calibration parameter, and completing on-chip calibration of the temperature sensor.
Further, in step S1, the first-order linear expression is:
V1＝a0+a1T
V2＝b0+b1T
wherein, a0、a1Representing a first voltage signal V1The slope and intercept parameters in the first-order linear expression of (1); b0、b1Representing the second voltage signal V2The slope and intercept parameters in the first-order linear expression of (1).
Further, in step S2, the relational expression is:
wherein a, b and c are the calibration parameters:
further, step S3 further includes: measuring two temperatures T1、T2V at1、V2Is calculated to obtain a0、a1、b0、b1And further obtaining accurate values of the calibration parameters a, b and c.
Further, the digital temperature sensor comprises the analog front end, a delta sigma ADC and a DSP which are connected in sequence.
Furthermore, the analog front end generates a first voltage signal V related to temperature by using a parasitic PNP triode in a CMOS (complementary metal oxide semiconductor) process as a temperature sensing element1And a second voltage signal V2。
Further, the Δ Σ ADC is configured to receive the first voltage signal V1And said second voltage signal V2Obtaining the first voltage signal V1And said second voltage signal V2And quantizing and filtering the ratio to obtain the quantized ratio Y.
Further, the DSP is configured to convert the quantized ratio Y into a digital temperature value.
In another embodiment of the present invention, a temperature sensor is provided, and an on-chip high-precision calibration method using the temperature sensor is provided.
In another embodiment of the present invention, there is provided an integrated circuit comprising the temperature sensor.
The beneficial technical effects of the invention are as follows:
the invention discloses a temperature sensor and an on-chip high-precision calibration method thereof, which can determine the precise calibration values of the slope and the intercept in a first-order linear expression of a first voltage signal V1 and a second voltage signal V2 and can also precisely determine each calibration parameter of a temperature value T relational expression in the temperature sensor by a two-temperature method, thereby realizing a higher-precision CMOS temperature sensor calibration scheme.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and those skilled in the art can also obtain other drawings according to the drawings without creative efforts.
FIG. 1 is a schematic diagram of a digital temperature sensor architecture in the prior art;
fig. 2 is a flowchart of an on-chip high-precision calibration method for a temperature sensor according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The invention provides a temperature sensor and an on-chip high-precision calibration method thereof, which can determine a first voltage signal V by a two-temperature method1A second voltage signal V2The accurate calibration values of the slope and the intercept in the first-order linear expression can also accurately determine each calibration parameter of the temperature value T relational expression in the temperature sensor, thereby realizing a CMOS temperature sensor calibration scheme with higher precision.
The invention is described in further detail below with reference to the figures and the embodiments.
Fig. 1 is a schematic structural diagram of a digital temperature sensor architecture in the prior art. As shown in fig. 1, the digital temperature sensor includes an analog front end, a Δ Σ ADC, a DSP.
The analog front end generates a first voltage signal V related to temperature by using a parasitic PNP triode in a CMOS (complementary Metal-oxide-semiconductor transistor) process as a temperature sensing element1And a second voltage signal V2(ii) a A first voltage signal V1And a second voltage signal V2Respectively corresponding to different temperature coefficients.
Further, the first voltage signal V1Positively correlated with temperature, second voltage signal V2Is inversely related to temperature; wherein the second voltage signal V2Is the base-emitter voltage V of two PNP triodesBEThe difference between them.
And the delta sigma ADC is used for receiving the first voltage signal V1 and the second voltage signal V2, acquiring the ratio of the first voltage signal V1 to the second voltage signal V2, and quantizing and filtering the ratio to obtain a quantized ratio Y. Wherein
And the DSP is used for converting the quantized ratio Y into a digital temperature value.
Based on the digital temperature sensor, fig. 2 is a flowchart of an on-chip high-precision calibration method for a temperature sensor according to an embodiment of the present invention. As shown in fig. 2, the on-chip high-precision calibration method for the temperature sensor includes:
step S1: respectively determining a first voltage signal V1A second voltage signal V2First order linear expression with temperature value T:
V1＝a0+a1T (1)
V2＝b0+b1T (2)
wherein, a0、a1Representing a first voltage signal V1The slope and intercept parameters in the first-order linear expression of (1); b0、b1Representing a second voltageSignal V2The slope and intercept parameters in the first-order linear expression of (1).
In the present invention, V is set1And V2Are all first order linear with temperature, and in particular, unlike conventional calibration algorithms, V is not assumed in this patent2Is the voltage of the absolute PTAT, i.e. V when the absolute temperature is 02The value of (c) is not 0, which assumption also guarantees a high accuracy of the calibration method.
Step S2: according to a first voltage signal V1A second voltage signal V2The first-order linear expression of the temperature value T, the quantization ratio Y and the calibration parameter are deduced to obtain a relational expression of the temperature value T, the quantization ratio Y and the calibration parameter.
The method specifically comprises the following steps: a first voltage signal V1A second voltage signal V2The first order linear expression of (a) is substituted into the quantization ratio Y to obtain:
obtained from the above formula:
further simplifying to:
wherein a, b and c are calibration parameters:
step S3: multiplexing temperature sensors, measuring two temperatures T1、T2V at1、V2A is obtained by calculation of the formula (1) and the formula (2)0、a1、b0、b1And further obtaining accurate values of the calibration parameters a, b and c, thereby completing on-chip calibration of the temperature sensor.
It is also noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a good or system that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such good or system. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a commodity or system that includes the element.
The foregoing description shows and describes several preferred embodiments of the invention, but as aforementioned, it is to be understood that the invention is not limited to the forms disclosed herein, but is not to be construed as excluding other embodiments and is capable of use in various other combinations, modifications, and environments and is capable of changes within the scope of the inventive concept as expressed herein, commensurate with the above teachings, or the skill or knowledge of the relevant art. And that modifications and variations may be effected by those skilled in the art without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. An on-chip high-precision calibration method for a temperature sensor is characterized by comprising the following steps:
step S1: respectively determining a first voltage signal V1A second voltage signal V2A first order linear expression with a temperature value T; wherein the first voltage signal V related to temperature is generated using an analog front end of the temperature sensor1And the second voltage signal V2；
Step S2: according to the first voltage signal V1The second voltage signal V2Deducing a relational expression of the temperature value T, the quantization ratio Y and the calibration parameter; wherein the quantization ratio Y is the quantized second voltage signal V2The first voltage signal V1The ratio of (A) to (B);
step S3: multiplexing temperature sensors, measuring two temperatures T1、T2Said first voltage signal V1The second voltage signal V2And (4) calculating to obtain an accurate value of the calibration parameter, and completing on-chip calibration of the temperature sensor.
2. The on-chip high-precision calibration method for the temperature sensor according to claim 1, wherein the first-order linear expression in step S1 is:
V1＝a0+a1T
V2＝b0+b1T
wherein, a0、a1Representing a first voltage signal V1The slope and intercept parameters in the first-order linear expression of (1); b0、b1Representing the second voltage signal V2The slope and intercept parameters in the first-order linear expression of (1).
3. The on-chip high-precision calibration method for the temperature sensor according to claim 2, wherein the relational expression in step S2 is:
wherein a, b and c are the calibration parameters:
4. the on-chip high-precision calibration method for the temperature sensor according to claim 3, wherein the step S3 further comprises: measuring two temperatures T1、T2V at1、V2Is calculated to obtain a0、a1、b0、b1And further obtaining accurate values of the calibration parameters a, b and c.
5. The method for calibrating the temperature sensor with high accuracy on chip according to any one of claims 1 to 4, wherein the digital temperature sensor comprises the analog front end, the delta sigma ADC and the DSP which are connected in sequence.
6. The on-chip high-precision calibration method of the temperature sensor according to claim 5, wherein the analog front end generates the first voltage signal V related to temperature by using a parasitic PNP triode in a CMOS process as a temperature sensing element1And said second voltage signal V2。
7. The method of on-chip calibration of a temperature sensor of claim 5, wherein the Δ Σ ADC is configured to receive the first voltage signal V1And said second voltage signal V2Obtaining the first voltage signal V1And said second voltage signal V2And quantizing and filtering the ratio to obtain the quantized ratio Y.
8. The method for calibrating the temperature sensor with high accuracy on chip as claimed in claim 5, wherein the DSP is used for converting the quantized ratio Y into a digital temperature value.
9. A temperature sensor, characterized by using the on-chip high precision calibration method of the temperature sensor according to any one of claims 1 to 8.
10. An integrated circuit comprising the temperature sensor of claim 9.
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