CN1132408A - Thin silicon chip material on diamond film and its prepn. - Google Patents
Thin silicon chip material on diamond film and its prepn. Download PDFInfo
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- CN1132408A CN1132408A CN 95119375 CN95119375A CN1132408A CN 1132408 A CN1132408 A CN 1132408A CN 95119375 CN95119375 CN 95119375 CN 95119375 A CN95119375 A CN 95119375A CN 1132408 A CN1132408 A CN 1132408A
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Abstract
A thin silicon structure on diamond membrane (SOD) used as chip of electronic devices is prepared through sequential forming SiO2 transient layer, diamond membrane and Si3N4 protecting layer on bonded monocrystal silicon, growing polycrystal silicon, oxidization to form bonded SiO2 layer, hydrophilic treatment of bonded monocrystal silicon as substrate and bonded SiO2 layer, sealing in water, high-temp binding and annealing, and features complete lattice, firm binding and high rate of finished products. The electronic device made of it has better anti-radiation, thermal conduction and electric insulation performances.
Description
The invention belongs to a kind of silicon single crystal wafer material and preparation method, particularly a kind of thin silicon chip material and preparation method with diamond film.
At present, the material of common radioresistance electronic device is the thin layer single crystal silicon material on the insulant, is called the SOI material.Thin silicon on the diamond film is the thin silicon on the developed insulating barrier.Because the insulation of the height of diamond film, high-termal conductivity make this material become the ideal material of making high-power electronic device and radioresistance electronic device.
Thin silicon chip material and the technology that is close most with the present invention is material and the technology of introducing in " radiation characteristic of the CMOS/SOI device that wafer bonding and back-etching are made " article, this article carries " IEEE Transactions on Nuclear Science " Vol.35, NO.6, December 1988,1653～1656.The structure of the chip material that article is introduced as shown in Figure 1.Chip material is to be substrate with monocrystalline silicon, claims substrate monocrystal silicon 1, is formed with substrate silicon dioxide layer 2 on it; Topmost for being used to make the bonding monocrystalline silicon 5 of electronic device, bonding monocrystalline silicon 5 lower surfaces are formed with bonding silicon dioxide layer 3, and substrate silicon dioxide layer 2 and bonding silicon dioxide layer 3 become silicon dioxide insulating layer through the high temperature bonding.Its preparation technology is roughly: substrate monocrystal silicon 1 and bonding monocrystalline silicon 5, form substrate silicon dioxide layer 2 and bonding silicon dioxide layer 3 respectively through oxidation, silicon dioxide layer (2 on two monocrystalline silicon pieces, 3) through driving fit, under 1100 ℃ of high temperature and purification wet oxygen condition, bonding 2 hours, form the chip piece material, with machinery and the thickness of noncontact chemical polishing attenuate bonding monocrystalline silicon 5, form the chip material of the thin silicon (soi structure) on the insulation silicon dioxide at last to suitable making electronic device.
It is insulating barrier that this structure adopts silicon dioxide, makes that the device of made has the radioresistance feature on the thin-layer silicon.But because the material of soi structure is subjected to the restriction of energy gap own, cause this material radiation resistance and heat conductivility that certain limit is arranged, be unfavorable for the making of high power device and anti-intense radiation device, on technology, because bonding is at high temperature directly to carry out, also defectiveness aspect fastness, rate of finished products is lower.
The objective of the invention is, designing a kind of is the thin silicon chip material of insulating barrier with the diamond film, design one cover is for realizing the technical process and the process conditions of this structure, make thin silicon on the diamond film of preparing can overcome the deficiency of soi structure, promptly help anti-intense radiation or/and the making of high power device, again can bonding firm, easy to make, success rate is high.
Thin silicon on the diamond film of the present invention (claiming the SOD structure) chip material is a substrate with the monocrystalline silicon piece, is called substrate monocrystal silicon, and it is a passive monocrystalline silicon piece in the structural material of the present invention, and its surface preparation has the substrate silicon dioxide layer; Another sheet monocrystalline silicon piece is used for bonding after the driving fit of substrate monocrystal silicon, is thinned the formation thin-layer silicon at last, is used to make electronic device, and it is called as bonding monocrystalline silicon, and preparation has the bonding silicon dioxide layer on it.Silicon dioxide layer driving fit on two monocrystalline silicon pieces forms the layer of silicon dioxide insulating barrier through the high temperature bonding.Different with the soi structure of prior art is, between bonding monocrystalline silicon and silicon dioxide insulating layer, (promptly between bonding monocrystalline silicon and bonding silicon dioxide layer) is formed with silicon dioxide transition thin layer earlier, and preparation has diamond film and silicon nitride protective layer on it.
Fig. 1 is the schematic cross-sectional view of the SOI material of prior art.
Fig. 2 is the thin silicon schematic cross-sectional view of diamond film of the present invention.
Among Fig. 2, the 1st, substrate monocrystal silicon can have the thickness of 300 μ m, and its surface preparation has substrate silicon dioxide layer 2, and thickness can be 0.3 μ m; 5 is bonding monocrystalline silicon, and thickness is the same with substrate monocrystal silicon 1, and after attenuate formed thin-layer silicon, its thickness was preferably about 1 μ m at 0.5～3 μ m, becomes the chip material that is suitable for making electronic device.Preparation has layer of silicon dioxide transition thin layer 6 on bonding monocrystalline silicon 5, and thickness can be 10
-2μ m magnitude, analogy 10
-2μ m, it can reduce diamond and touch interface state density between film 7 and the thin-layer silicon, the diffusion of impurity when making electronic device after stopping.The thickness of diamond film 7 is 1～4 μ m, is preferably 2 μ m, and at the silicon nitride protective layer 8 of the lower surface of diamond film 7, thickness can be 10
-1It plays the effect that prevents that diamond film 7 is oxidized μ m magnitude.One deck bonding silicon dioxide layer 3 of Xing Chenging forms silicon dioxide insulating layer with bonding after 2 driving fits of substrate silicon dioxide layer at last.
Because chip material of the present invention has been introduced diamond film 7, has the fastness of bonding in order to make the chip material of preparing, raising is bonded to power, has adopted technical process unlike the prior art.Concrete bonding preparation process is as described below.
Make bonding monocrystalline silicon 5 with a slice monocrystalline silicon piece for preparing, one surface forms earlier silicon dioxide transition thin layer 6, again growing diamond film 7 and silicon nitride protective layer 8 in turn; Growth one layer thickness can be the polysilicon of 0.3 μ m on silicon nitride protective layer 8, and the polysilicon layer oxidation forms bonding silicon dioxide layer 3.Make substrate monocrystal silicon 1 with another sheet monocrystalline silicon piece for preparing, the one surface oxidation forms substrate silicon dioxide layer 2, and thickness can be 0.3 μ m.There are the bonding monocrystalline silicon 5 of bonding silicon dioxide layer 3 and substrate silicon dioxide layer 2 and substrate monocrystal silicon 1 to carry out hydrophilic treated with growing respectively, make the face-to-face driving fit of polished surface of bonding silicon dioxide layer 3 and substrate silicon dioxide layer 2, place high temperature furnace, in environment purification, under the logical dried oxygen condition, be warmed up to 800～1000 ℃ gradually from normal temperature, logical wet oxygen to 1200 ℃, constant temperature 2 hours.After taking out from high temperature furnace, attenuate bonding monocrystalline silicon 5 is to the thickness that is fit to make electronic device.
Said hydrophilic treated is to be formed with two monocrystalline silicon pieces of bonding silicon dioxide layer 3 and substrate silicon dioxide layer 2, in acetone after the sonicated, respectively in order the sulfuric acid through containing hydrogen peroxide, contain hydrogen peroxide ammoniacal liquor, contain in the hydrochloric acid solution of hydrogen peroxide and boiled 2～3 minutes; In the nitric acid that contains hydrogen peroxide of (50 ± 5) ℃, soaked 3～5 minutes again, in deionized water, wash.
The sulfuric acid composition that wherein contains hydrogen peroxide can be H
2SO
4: H
2O
2It is 10: 1; The nitrogen water constituent that contains two ammoniacal liquor can be H
2O: H
2O
2: NH
3H
2O is 5: 2: 1, and the hydrochloric acid composition that contains hydrogen peroxide can be H
2O: H
2O
2: HCl is 7: 2: 1; The composition of nitric acid hydrogen peroxide can be H
2O
2: HNO
3It is 1: 1.Afterwards, the deionized water temperature of flushing usefulness be (50 ± 5) ℃, and resistivity is washed more than 10 times greater than 16M Ω/cm.
In the said bonding process, being warmed up to 800～1000 ℃ gradually from normal temperature is performed such: the silicon chip after the driving fit is placed on high temperature furnace apart from flat-temperature zone 20～30cm place, logical nitrogen is 30 minutes under the normal temperature, logical dried afterwards oxygen heats up, and two monocrystalline silicon pieces with driving fit when temperature rises to 800～1000 ℃ are pushed into the flat-temperature zone.Under logical wet oxygen condition, 1200 ℃ of constant temperature before the silicon chip of bonding is come out of the stove, had an annealing process after 2 hours, and logical nitrogen was lowered the temperature about 30 minutes, slowly chip material was taken out from high temperature furnace again.
When above-mentioned logical nitrogen, logical dried oxygen, logical wet oxygen, flow generally can be 0.8～1.5 liter/minute, and flow is excessive, too small fastness and the rate of finished products that all is unfavorable for bonding.
Said in substrate silicon dioxide layer 2 that forms on the substrate monocrystal silicon 1 and the face-to-face driving fit of bonding silicon dioxide layer 3 polished surfaces that on bonding monocrystalline silicon 5, forms, carry out in the deionized water at normal temperatures, when from deionized water, taking out, be that polished surface is put into high temperature furnace in the vertical direction taking-up.
With bonding monocrystalline silicon 5 attenuates, can be that to be thinned to thin-layer silicon thickness with ion beam polishing again after the mechanical polishing attenuate be 0.5～3 μ m.
Thin silicon on the diamond film of the present invention (SOD) chip material is owing to adopt Diamond film and make thereon the electronic device of preparation have anti-intense radiation performance and good Heat dispersion and insulating properties, it is high-power or/and the radioresistance device to be of value to making; Because The formation of silica transition thin layer is arranged, and the diffusion of impurity also when being conducive to stop element manufacturing Reduce the interface state density of diamond film and thin-layer silicon. Bonding preparation method of the present invention because Adopt driving fit and 1200 ℃ of high temperature bondings in strict hydrophilic treated, the water, bonding is had Fastness; Owing in high temperature furnace, begin to heat up gradually from normal temperature, can prevent monocrystalline silicon piece Explosion, improve the success rate of bonding, reduce waste product; Since behind the bonding under nitrogen protection Annealing and makes the monocrystalline silicon lattice have integrality, is conducive to the making of electronic device and stable. It is short that bonding technology of preparing of the present invention also has fabrication cycle, stable preparation process, making side The characteristics such as method is easy, and batch is big.
Claims (8)
1, the thin silicon on a kind of diamond film is to be formed with substrate silicon dioxide layer (2) on substrate monocrystal silicon (1); Uppermost bonding monocrystalline silicon (5) forms the layer of silicon dioxide insulating barrier by one deck bonding silicon dioxide layer (3) on it with substrate silicon dioxide layer (2) high temperature bonding; The invention is characterized in that between bonding monocrystalline silicon (5) and bonding silicon dioxide layer (3), form silicon dioxide transition thin layer (6) earlier, preparation has diamond film (7) and silicon nitride protective layer (8) on it.
2,, it is characterized in that silicon dioxide transition thin layer (5) thickness on bonding monocrystalline silicon (5) is 10 according to the thin silicon on the described diamond film of claim 1
-2μ m magnitude, the thickness of diamond film (7) are 1～4 μ m, silicon nitride protective layer (8) thickness 10
-1μ m magnitude, bonding monocrystalline silicon (5) is 0.5～3 μ m through the formed thin-layer silicon thickness of attenuate.
3, the bonding preparation method of the thin silicon on a kind of diamond film is to form substrate silicon dioxide layer (2) and bonding silicon dioxide layer (3) on a surface of substrate monocrystal silicon (1) and bonding monocrystalline silicon (5) respectively; Bonding in the oxygen atmosphere through purifying, attenuate bonding monocrystalline silicon (5) the invention is characterized in again, before bonding, goes up at bonding monocrystalline silicon (5) and to form silicon dioxide transition thin layer (6) earlier, growing diamond film (7) and silicon nitride protective layer (8) in turn on it; Said bonding silicon dioxide layer (3) is to go up growth one deck polysilicon at silicon nitride protective layer (8), reoxidizes formation; Said bonding, be earlier through hydrophilic treated, substrate silicon dioxide layer (2) on the substrate monocrystal silicon (1) is followed the face-to-face driving fit of the lip-deep bonding silicon dioxide of bonding monocrystalline silicon (5) (3) polished surface, be placed in the high temperature furnace, in environment purification, lead under the dried oxygen condition, be warmed up to 800～1000 ℃ gradually from normal temperature, logical wet oxygen to 1200 ℃ constant temperature 2 hours; Take out back attenuate bonding monocrystalline silicon (5) to the thickness that is fit to make electronic device from high temperature furnace.
4, according to the bonding preparation method of the thin silicon on the described diamond film of claim 3, it is characterized in that said hydrophilic treated is to be formed with two monocrystalline silicon pieces of substrate silicon dioxide layer (2) and bonding silicon dioxide layer (3), in acetone after the sonicated, respectively in order the sulfuric acid through containing hydrogen peroxide, contain hydrogen peroxide ammoniacal liquor, contain in the hydrochloric acid solution of hydrogen peroxide and boiled 2～3 minutes, in the nitric acid that contains hydrogen peroxide of (50 ± 5) ℃, soaked 3～5 minutes again, in deionized water, rinse well, again the driving fit bonding.
5,, it is characterized in that the sulfuric acid composition that contains hydrogen peroxide used in the hydrophilic treated is H according to the bonding preparation method of the thin silicon on claim 3 or the 4 described diamond films
2SO
4: H
2O
2It is 10: 1; The composition that contains the ammoniacal liquor of hydrogen peroxide is H
2O: H
2O
2: NH
3H
2O is 5: 2: 1; The composition that contains the hydrochloric acid solution of hydrogen peroxide is H
2O: H
2O
2: HCl is 7: 2: 1; The composition that contains the nitric acid of hydrogen peroxide is H
2O
2: HNO
3It is 1: 1; Saidly in deionized water, wash, resistivity greater than 16M Ω/cm (50 ± 5) ℃ deionized water in flushing more than 10 times.
6, according to the bonding preparation method of the thin silicon on claim 3 or the 4 described diamond films, it is characterized in that in bonding, the process that is warming up to 800～1000 ℃ from normal temperature gradually comprises: two monocrystalline silicon pieces after the driving fit are placed in the high temperature furnace apart from constant temperature back zone 20～30 centimeters, logical nitrogen is 30 minutes under the normal temperature, logical dried afterwards oxygen heats up, and shifts two monocrystalline silicon pieces of driving fit onto flat-temperature zone when temperature rises to 800～1000 ℃; Behind the high temperature bonding, also to promptly after 2 hours, lead to nitrogen cooling 30 minutes, slowly the chip material that is prepared into be taken out from high temperature furnace again through annealing process at 1200 ℃ of constant temperature under the wet oxygen condition; The flow of the nitrogen that is led in bonding, dried oxygen, wet oxygen is 0.8～1.5 liter/minute.
7, according to the bonding preparation method of the thin silicon on claim 3 or the 4 described diamond films, it is characterized in that the face-to-face driving fit of polished surface of said substrate silicon dioxide layer (2) and bonding silicon dioxide layer (3), carry out in the deionized water at normal temperatures, when from deionized water, taking out, be that polished surface is put into high temperature furnace in the vertical direction taking-up.
8, according to the bonding preparation method of the thin silicon on the described diamond film of claim 6, it is characterized in that the face-to-face driving fit of polished surface of said substrate silicon dioxide layer (2) and bonding silicon dioxide layer (3), carry out in the deionized water at normal temperatures, when from deionized water, taking out, be that polished surface is put into high temperature furnace in the vertical direction taking-up.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN95119375A CN1037386C (en) | 1995-12-12 | 1995-12-12 | Thin silicon chip material on diamond film and its prepn. |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN95119375A CN1037386C (en) | 1995-12-12 | 1995-12-12 | Thin silicon chip material on diamond film and its prepn. |
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| Publication Number | Publication Date |
|---|---|
| CN1132408A true CN1132408A (en) | 1996-10-02 |
| CN1037386C CN1037386C (en) | 1998-02-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN95119375A Expired - Fee Related CN1037386C (en) | 1995-12-12 | 1995-12-12 | Thin silicon chip material on diamond film and its prepn. |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7122865B2 (en) | 2003-06-12 | 2006-10-17 | Siltronic Ag | SOI wafer and process for producing it |
| CN101223630B (en) * | 2005-07-11 | 2010-10-13 | 阿波罗钻石公司 | Structure formed in diamond |
| CN103787585A (en) * | 2014-02-10 | 2014-05-14 | 北京美顺达技术开发有限公司 | Method for depositing diamond film on quartz substrate |
| CN105144386A (en) * | 2013-04-11 | 2015-12-09 | 西门子股份公司 | Production method of a sensor chip and computerized tomography detector |
| CN108695231A (en) * | 2017-04-08 | 2018-10-23 | 沈阳硅基科技有限公司 | The preparation method of super thick soi wafer oxide layer |
| CN109183142A (en) * | 2018-11-14 | 2019-01-11 | 中国工程物理研究院激光聚变研究中心 | A kind of seed crystal support and preparation method thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7132309B2 (en) * | 2003-04-22 | 2006-11-07 | Chien-Min Sung | Semiconductor-on-diamond devices and methods of forming |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1028191C (en) * | 1992-11-10 | 1995-04-12 | 东南大学 | Silicon chip directive bonding method |
-
1995
- 1995-12-12 CN CN95119375A patent/CN1037386C/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7122865B2 (en) | 2003-06-12 | 2006-10-17 | Siltronic Ag | SOI wafer and process for producing it |
| CN1298021C (en) * | 2003-06-12 | 2007-01-31 | 硅电子股份公司 | SOI wafer and process for producing it |
| CN101223630B (en) * | 2005-07-11 | 2010-10-13 | 阿波罗钻石公司 | Structure formed in diamond |
| CN105144386A (en) * | 2013-04-11 | 2015-12-09 | 西门子股份公司 | Production method of a sensor chip and computerized tomography detector |
| CN103787585A (en) * | 2014-02-10 | 2014-05-14 | 北京美顺达技术开发有限公司 | Method for depositing diamond film on quartz substrate |
| CN108695231A (en) * | 2017-04-08 | 2018-10-23 | 沈阳硅基科技有限公司 | The preparation method of super thick soi wafer oxide layer |
| CN109183142A (en) * | 2018-11-14 | 2019-01-11 | 中国工程物理研究院激光聚变研究中心 | A kind of seed crystal support and preparation method thereof |
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| Publication number | Publication date |
|---|---|
| CN1037386C (en) | 1998-02-11 |
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