CN113035734B - Silicon wafer offset determination method and silicon wafer handover precision detection method - Google Patents
Silicon wafer offset determination method and silicon wafer handover precision detection method Download PDFInfo
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Abstract
The invention provides a silicon wafer offset determining method and a silicon wafer handover precision detecting method, which relate to the technical field of semiconductors, and the silicon wafer offset determining method comprises the following steps: when the silicon wafer is positioned at a preset handover position, acquiring a first coordinate of a first preset mark point on the silicon wafer based on a first photoelectric sensor; the focal plane of the first photoelectric sensor is positioned on the upper surface of the silicon wafer at a preset junction position; when the silicon wafer is positioned on the wafer carrying platform, acquiring a second coordinate of a second preset mark point on the silicon wafer based on a second photoelectric sensor; the focal plane of the second photoelectric sensor is positioned on the upper surface of the silicon wafer at the wafer bearing table; and determining the offset of the silicon wafer based on the first coordinate and the second coordinate. The method and the device can accurately calculate the offset of the silicon wafer, and improve the accuracy of silicon wafer offset detection.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a silicon wafer offset determining method and a silicon wafer handover precision detecting method.
Background
In the process of delivering and loading the silicon wafer, a wafer fork (Gripper) on the test fixture sends the silicon wafer to a delivering position, a lifting pin (also called as an Epin, a stitch or an e pin) part is vacuumized, and the lifting pin is lifted to the lower surface of the silicon wafer, completes the transfer of the silicon wafer with the wafer fork and moves to an upper limit. And in the Epin lifting state, the upper piece manipulator fork is withdrawn, and the Epin places the silicon wafer on the wafer bearing table and is fixed by the wafer bearing table sucker. Because of various errors and disturbances in the system, in the wafer loading and transferring process, the silicon wafer has a position offset in the horizontal plane, in order to detect the accuracy of the photoetching machine, the repeated positioning performance test of the silicon wafer transferring is required, the position offset of the silicon wafer in the transferring process is detected, and whether the offset meets the requirement is determined.
The existing silicon wafer positioning technology mainly adopts a photoelectric sensor to move up and down to detect the joint position and mark points on the silicon wafer at the wafer bearing platform for positioning the silicon wafer, and because the joint position and the silicon wafer bearing platform are positioned at different height positions, the photoelectric sensor easily generates errors in the horizontal direction when moving up and down, and then the errors generated by movement are brought into silicon wafer positioning data in the silicon wafer positioning, so that the silicon wafer positioning precision is reduced, the calculated silicon wafer offset has errors, and the accuracy of silicon wafer offset detection is reduced.
Disclosure of Invention
In view of the above, the invention aims to provide a silicon wafer offset determining method and a silicon wafer handover precision detecting method, which can accurately calculate the offset of a silicon wafer and improve the accuracy of silicon wafer offset detection.
In order to achieve the above object, the technical scheme adopted by the embodiment of the invention is as follows:
in a first aspect, an embodiment of the present invention provides a method for determining a silicon wafer offset, including: when a silicon wafer is positioned at a preset handover position, acquiring a first coordinate of a first preset mark point on the silicon wafer based on a first photoelectric sensor; the focal plane of the first photoelectric sensor is positioned on the upper surface of the silicon wafer at the preset junction; when the silicon wafer is positioned on the wafer bearing table, acquiring a second coordinate of a second preset mark point on the silicon wafer based on a second photoelectric sensor; the focal plane of the second photoelectric sensor is positioned on the upper surface of the silicon wafer at the wafer bearing platform; and determining the offset of the silicon wafer based on the first coordinate and the second coordinate.
Preferably, the first coordinate is a coordinate in a first coordinate system, and the second coordinate is a coordinate in a second coordinate system; the step of determining the offset of the silicon wafer based on the first coordinate and the second coordinate comprises the following steps: calculating the coordinates of the central point of the silicon chip under the first coordinate system based on the first coordinates to obtain first coordinates of the central point; calculating the coordinates of the central point of the silicon chip under the second coordinate system based on the second coordinates to obtain second coordinates of the central point; and determining the offset of the silicon wafer in the handover process based on the first coordinate of the center point and the second coordinate of the center point.
Preferably, the method further comprises: and determining the coordinate conversion relation between the first preset mark point and the second preset mark point based on the first preset mark point and the second preset mark point.
Preferably, the first preset mark point comprises two or more mark points; the step of calculating the coordinates of the central point of the silicon wafer under the first coordinate system based on the first coordinates to obtain the first coordinates of the central point comprises the following steps: determining a first included angle between the silicon chip and a transverse axis of the first coordinate system based on the coordinates of each marking point in the first coordinate; calculating a first target coordinate of the second preset mark point in the first coordinate system based on the first coordinate, the first included angle and the coordinate conversion relation; and acquiring the position information of the first preset mark point and the second preset mark point on the silicon wafer, and determining the coordinate of the central point of the silicon wafer under the first coordinate system based on the first target coordinate and the position information to obtain the first coordinate of the central point.
Preferably, the second preset mark point comprises two or more mark points; the step of calculating the coordinates of the center point of the silicon wafer under the first coordinate system based on the second coordinates to obtain the second coordinates of the center point comprises the following steps: determining a second included angle between the silicon chip and a transverse axis of the second coordinate system based on the coordinates of each marking point in the second preset marking points in the second coordinate system; calculating a second target coordinate of the second preset mark point under the first coordinate system based on the second coordinate, the second included angle and the coordinate conversion relation; and acquiring the position information of the first preset mark point and the second preset mark point on the silicon wafer, and determining the coordinate of the central point of the silicon wafer under the first coordinate system based on the second target coordinate and the position information to obtain a second coordinate of the central point.
Preferably, the offset includes a lateral offset, a longitudinal offset, and a wafer corner; the step of determining the offset of the silicon wafer in the handover process based on the first center point coordinate and the second center point coordinate comprises the following steps: calculating a horizontal coordinate difference value between the first center point coordinate and the second center point coordinate to obtain a horizontal offset of the silicon wafer; calculating a longitudinal coordinate difference value between the first center point coordinate and the second center point coordinate to obtain a longitudinal offset of the silicon wafer; and determining the silicon wafer corner of the silicon wafer in the handover process based on a first included angle between the silicon wafer and the transverse axis of the first coordinate system and a second included angle between the silicon wafer and the transverse axis of the second coordinate system.
In a second aspect, an embodiment of the present invention further provides a method for detecting silicon wafer handover accuracy, which is applied to a lithography machine, where the method for detecting silicon wafer handover accuracy includes: detecting the offset of the silicon wafer in the process of multiple times of cross-bonding and loading based on the silicon wafer offset determining method in any one of the first aspects to obtain multiple groups of offset; and carrying out normal distribution calculation on the plurality of groups of offset values to obtain the silicon wafer handover precision of the photoetching machine.
In a third aspect, an embodiment of the present invention provides a silicon wafer offset determining apparatus, including: the first acquisition module is used for acquiring a first coordinate of a first preset mark point on the silicon wafer based on a first photoelectric sensor when the silicon wafer is positioned at a preset handover position; the focal plane of the first photoelectric sensor is positioned on the upper surface of the silicon wafer at the preset junction; the second acquisition module is used for acquiring a second coordinate of a second preset mark point on the silicon wafer based on a second photoelectric sensor when the silicon wafer is positioned on the wafer bearing table; the focal plane of the second photoelectric sensor is positioned on the upper surface of the silicon wafer at the wafer bearing platform; and the determining module is used for determining the offset of the silicon wafer based on the first coordinate and the second coordinate.
In a fourth aspect, an embodiment of the present invention provides a silicon wafer handover accuracy detection apparatus, which is applied to a lithography machine, and the silicon wafer handover accuracy detection apparatus includes: the detection module is used for detecting the offset of the silicon wafer in the process of repeatedly connecting the silicon wafer to the wafer on the basis of the silicon wafer offset determining device of the second aspect to obtain a plurality of groups of offset; and the calculation module is used for carrying out normal distribution calculation on the plurality of groups of offset values to obtain the silicon wafer handover precision of the photoetching machine.
In a fifth aspect, an embodiment of the present invention provides a silicon wafer positioning device, including: the device comprises a first photoelectric sensor, a second photoelectric sensor, a processor and a storage device; the storage means has stored thereon a computer program which, when executed by the processor, performs the method according to any one of the first or second aspects.
The embodiment of the invention provides a silicon wafer offset determining method and a silicon wafer handover precision detecting method, wherein when a silicon wafer is positioned at a preset handover position, a first coordinate of a first preset mark point on the silicon wafer is obtained based on a first photoelectric sensor; the focal plane of the first photoelectric sensor is positioned on the upper surface of the silicon wafer at a preset junction position; when the silicon wafer is positioned on the wafer carrying platform, acquiring a second coordinate of a second preset mark point on the silicon wafer based on a second photoelectric sensor; the focal plane of the second photoelectric sensor is positioned on the upper surface of the silicon wafer at the wafer bearing table; and determining the offset of the silicon wafer based on the first coordinate and the second coordinate.
In the silicon wafer offset determining method, the two photoelectric sensors are arranged, the silicon wafer at the preset joint is positioned based on the first photoelectric sensor, the silicon wafer at the preset joint and the silicon wafer at the wafer bearing platform are positioned based on the second photoelectric sensor, the silicon wafer at the preset joint and the silicon wafer at the wafer bearing platform can be accurately positioned, the offset of the silicon wafer is accurately calculated through the first coordinate and the second coordinate obtained through positioning, the position of the photoelectric sensor is not required to be moved in the process of joining the silicon wafers, positioning errors caused by up-and-down movement of the photoelectric sensor are avoided, and the accuracy of silicon wafer offset detection is improved.
Additional features and advantages of embodiments of the invention will be set forth in the description which follows, or in part will be obvious from the description, or may be learned by practice of the embodiments of the invention.
In order to make the above objects, features and advantages of the present invention more comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 shows a schematic diagram of a single CCD system according to an embodiment of the present invention;
FIG. 2 shows a flowchart of a method for determining a silicon wafer offset according to an embodiment of the present invention;
FIG. 3 shows a schematic structure of a silicon wafer positioning device according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a first preset mark point distribution according to an embodiment of the present invention;
FIG. 5 shows a schematic diagram of distribution of marking points of a silicon wafer according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of coordinate value conversion according to an embodiment of the present invention;
FIG. 7 is a schematic diagram showing the positional relationship between a silicon wafer coordinate system and a CCD1 coordinate system and a CCD2 coordinate system according to an embodiment of the present invention;
FIG. 8 shows a schematic structural diagram of a silicon wafer offset determining device according to an embodiment of the present invention;
fig. 9 shows a schematic structural diagram of an electronic device according to an embodiment of the present invention.
Icon:
a CCD-photosensor; 11-a wafer carrying table; 12-sheet fork; 13-lifting pins; CCD 1-first photoelectric sensor; CCD 2-second photoelectric sensor; 31-default handover location; 32-a wafer carrying station.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the present invention will be described below with reference to the accompanying drawings, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments.
At present, the existing silicon Wafer positioning test technology mainly adopts a single CCD system to determine the offset of the silicon Wafer in the process of transferring and loading, referring to a single CCD system structure schematic diagram shown in fig. 1, the single CCD system comprises a photoelectric sensor CCD, a Wafer Table 11, a Wafer fork 12 and a lifting pin 13, as shown in fig. 1, the CCD can move up and down along the Z axis direction along the guide rail, so that the silicon Wafer is positioned on the focal depth neutral plane of the CCD, and the silicon Wafer is moved in the X direction (vertical to the Y axis and the Z axis) and the Y direction through the workpiece Table, so that a mark point on the silicon Wafer is positioned at the center of the CCD field of view, and the CCD obtains the relative position information of the silicon Wafer by reading the coordinate value of the mark point on the silicon Wafer.
The process of connecting the silicon wafers comprises an upper wafer and a lower wafer, when the wafer fork sends the silicon wafers to the upper wafer connecting position in the process of connecting the silicon wafers, the CCD moves to focus along the Z-axis direction, the coordinate value of a mark point on the silicon wafers is read, the Epin moves from the initial position to the upper wafer position, the Epin part is vacuumized, the wafer fork is vacuumized, the Epin drives the silicon wafers to move to the upper limit position (Epin Up), and the wafer fork returns to the initial position. And in the Epin lifting state, the upper piece manipulator fork is withdrawn, and the Epin places the silicon wafer on the wafer bearing table and is fixed by the wafer bearing table sucker. The CCD moves along the Z-axis direction, so that the upper surface of the silicon wafer is positioned on the focal plane of the CCD, and coordinate values of mark points on the silicon wafer are read. In the process of silicon wafer handover and unloading, after the silicon wafer finishes detection on the sucker, the Epin rises to the upper surface of the sucker and adsorbs the silicon wafer, the sucker stops adsorption and reversely lets in air through the pre-clamp, and the silicon wafer adsorption is transferred to the Epin adsorption by the upper surface of the sucker. And (3) continuously rising the Epin to the upper limit, inserting the lower wafer manipulator, lowering the Epin to be coplanar with the manipulator fork, completing the transfer of the silicon wafer with the manipulator fork, continuously lowering the Epin to the lowest position, and withdrawing the silicon wafer from the detection position by the manipulator connected with the silicon wafer, thereby completing a group of positioning tests.
Because the silicon wafer repeatability test station has a height difference, the depth of field of the high-precision photoelectric sensor used for measurement is only tens of micrometers, and the photoelectric sensor at a single fixed position cannot be used for positioning and detecting the space with the height difference of millimeter level between the silicon wafer at the handover position and the wafer bearing table. And the movable photoelectric sensor is easy to generate errors in the horizontal direction when moving up and down, so that the accuracy of detecting the offset of the silicon wafer is reduced. In order to solve the problem, the silicon wafer offset determination method and the silicon wafer handover precision detection method provided by the embodiment of the invention can be applied to improving the accuracy of silicon wafer offset detection. Embodiments of the present invention are described in detail below.
The present embodiment provides a method for determining a silicon wafer offset, which may be applied to a silicon wafer positioning device (may also be referred to as a dual CCD system), where the silicon wafer positioning device includes a first photoelectric sensor and a second photoelectric sensor, see a flowchart of the method for determining a silicon wafer offset shown in fig. 2, and the method mainly includes:
when the silicon wafer is located at a preset handover position, a first coordinate of a first preset mark point on the silicon wafer is obtained based on a first photoelectric sensor.
The focal plane of the first photoelectric sensor is located on the upper surface of the silicon wafer at the preset junction. Referring to the schematic structure of the silicon wafer positioning device shown in fig. 3, the first photoelectric sensor CCD1 is fixedly disposed on the main substrate, and when the silicon wafer is transferred to the preset transfer position 31 by the wafer fork in the process of wafer transfer, the first photoelectric sensor CCD1 is triggered to detect a first preset mark point on the silicon wafer, so as to obtain a coordinate value of the first preset mark point under the coordinate system of the CCD1 (i.e., the first coordinate system), and the coordinate value is recorded as the first coordinate.
And when the silicon wafer is positioned on the wafer bearing table, acquiring a second coordinate of a second preset mark point on the silicon wafer based on a second photoelectric sensor.
The focal plane of the second photoelectric sensor is positioned on the upper surface of the silicon wafer at the wafer bearing table. As shown in fig. 3, the second photoelectric sensor CCD2 is fixedly disposed on the main substrate, and when the silicon wafer is transferred to the wafer carrying stage 32 and fixed by the Epin during the wafer bonding process, the second photoelectric sensor CCD2 is triggered to detect a second preset mark point on the silicon wafer, so as to obtain a coordinate value of the second preset mark point in a CCD2 coordinate system (i.e., a second coordinate system), and the coordinate value is recorded as a second coordinate. The first preset mark point and the second preset mark point can be photoetching mark points which are marked on the silicon wafer in advance, so that the photoelectric sensor can rapidly detect the coordinates of each mark point.
In practical applications, the heights of the first photoelectric sensor CCD1 and the second photoelectric sensor CCD2 are different (the height difference may be determined according to the height difference of the preset handover position on the wafer carrying platform, for example, the height difference may be 6mm, the height error is less than 0.035 mm), the heights of the first photoelectric sensor CCD1 and the second photoelectric sensor CCD2 in the Z-axis direction are determined by the preset handover position and the height of the wafer carrying platform, the distance c between the first photoelectric sensor CCD1 and the second photoelectric sensor CCD2 may be set according to the silicon wafer size, so as to ensure that the first photoelectric sensor CCD1 and the second photoelectric sensor CCD2 may respectively detect the two sets of mark points (the first preset mark point and the second preset mark point), and the projection positions of the first photoelectric sensor CCD1 and the second photoelectric sensor CCD2 in the XY plane are set values and are determined by accurate calibration.
And determining the offset of the silicon wafer based on the first coordinate and the second coordinate.
Determining offset generated in the horizontal direction (namely the horizontal plane formed by an X axis and a Y axis) when the silicon wafer is transferred from the preset joint to the wafer bearing platform in the wafer loading or unloading process and silicon wafer corner generated in the transfer process based on a first coordinate of a first preset mark point of the silicon wafer at the preset joint and a second coordinate of a second preset mark point of the silicon wafer at the wafer bearing platform.
According to the silicon wafer offset determining method, the two photoelectric sensors are arranged, the silicon wafer at the preset joint position is positioned based on the first photoelectric sensor, the silicon wafer at the preset joint position and the silicon wafer at the wafer bearing platform are positioned based on the second photoelectric sensor, the silicon wafer at the preset joint position and the silicon wafer at the wafer bearing platform can be accurately positioned, the offset of the silicon wafer is accurately calculated through the first coordinate and the second coordinate obtained through positioning, the position of the photoelectric sensor is not required to be moved in the process of joining and loading the silicon wafer, positioning errors caused by up-and-down movement of the photoelectric sensor are avoided, and the accuracy of silicon wafer offset detection is improved.
In order to quickly calculate and obtain the offset of the silicon wafer, the method provided by the embodiment further includes: and determining the coordinate conversion relation between the first preset mark point and the second preset mark point based on the first preset mark point and the second preset mark point. Marking two groups of marks on the surface of the silicon wafer in advance, wherein the marks are marked as a first preset mark point and a second preset mark point, the first preset mark point comprises two or more mark points, for example, three mark points A1, B1 and C1 can be included, a first preset mark point distribution schematic diagram shown in fig. 4 is referred, and an example of the distribution of the first preset mark point on the silicon wafer is shown in fig. 4.
The second preset mark points comprise two or more mark points, the number of the first preset mark points and the number of the second preset mark points can be the same, and when marking, the distance between two groups of marks (the first preset mark points and the second preset mark points) is ensured to be a fixed value. For example, the second preset mark points may include three mark points A2, B2 and C2, referring to the silicon wafer mark point distribution schematic diagram shown in fig. 5, the distance between the first preset mark point and the second preset mark point is a fixed value, that is, a1a2=b1b2=c1c2, the point B1, the point B2, the point C1 and the point C2 are on a line, the line segment B1C2 is parallel to A1A2, the distance L between the two sets of mark points A1 and A2 is recorded, and the silicon wafer center point O is crossed wafer Parallel to A1A2 as X axis and perpendicular to X axis as Y axis, and establishing silicon wafer coordinate system to obtain the distance D from A2 point to Y axis of silicon wafer coordinate system X The distance from the point A2 to the X axis of the silicon chip coordinate system is D Y . After calibration, performing a silicon wafer handover test, wherein the first photoelectric sensor and the second photoelectric sensor are used for performing a silicon wafer handover testThe sensor respectively measures the coordinates of A1B1C1 and A2B2C2 under the corresponding photoelectric sensor detection coordinate system, then the coordinates of one group of points are converted into the coordinate system of the other group of points, the coordinate values of the same point detected twice under the same photoelectric sensor detection coordinate system are indirectly obtained, and the accuracy of determining the offset of the silicon wafer is improved.
The first coordinate is a coordinate in a first coordinate system, and the second coordinate is a coordinate in a second coordinate system, wherein the first coordinate system is a coordinate system established when the first photoelectric sensor CCD1 detects the first preset mark point coordinate, and the coordinate system is a coordinate system established when the second photoelectric sensor CCD2 detects the second preset mark point coordinate.
Deriving a coordinate conversion relationship between a first preset mark point and a second preset mark point based on any one set of mark points in the first preset mark point and the second preset mark point, such as deriving a coordinate conversion relationship between the first preset mark point and the second preset mark point based on the points A1 and A2, referring to the coordinate conversion schematic diagram shown in fig. 6, it can be derived from fig. 6 that the coordinate of A2 measured in the photoelectric sensor 2 in the first coordinate system of the first photoelectric sensor satisfies the following formula (1):
X A2-CCD1 ＝X 0 +X A2-CCD2 cosφ-Y A2-CCD2 sinφ＝X A1-CCD1 +Lcosα，
Y A2-CCD1 ＝Y 0 +Y A2-CCD2 sinφ+X A2-CCD2 sinφ＝Y A1-CCD1 +Lsinα。
obtaining a coordinate value conversion matrix formula (2):
wherein a=lcos α -X 0 ，b＝Lsinα-Y 0 L is the spacing between the two sets of mark points A1 and A2. X is X A2-CCD1 For the X-direction coordinate value, Y, of the point A2 in the first coordinate system of the first photosensor (CCD 1 coordinate system) A2-CCD1 Is the Y-coordinate value of point A2 in the first coordinate system of the first photosensor (i.e., the CCD1 coordinate system).
X A2-CCD2 For the X-coordinate value, Y, of the point A2 in the second coordinate system of the second photosensor (i.e. CCD2 coordinate system) A2-CCD2 For the Y-coordinate value, X, of the point A2 in the second coordinate system of the second photosensor (i.e., CCD2 coordinate system) 0 An X-direction coordinate value of an origin of a second coordinate system of the second photoelectric sensor in the first coordinate system is a Y-direction coordinate value Y of the origin of the second coordinate system of the second photoelectric sensor in the first coordinate system 0 。
X A1-CCD1 For the X-direction coordinate value, Y, of the point A1 in the first coordinate system of the first photosensor (i.e. CCD1 coordinate system) A1-CCD1 Is the Y-coordinate value of point A1 in the first coordinate system of the first photosensor (i.e., the CCD1 coordinate system).
The following formula (3) is obtained according to formula (1):
X 0 ＝X A1-CCD1 +Lcosα-X A2-CCD2 cosφ+Y A2-CCD2 sinφ，
Y 0 ＝Y A1-CCD1 +Lsinα-Y A2-CCD2 cosφ-X A2-CCD2 sinφ；
φ＝ψ+α
referring to a schematic diagram of the positional relationship between the silicon wafer coordinate system and the CCD1 and CCD2 coordinate systems shown in fig. 7, where Φ is an offset angle between the CCD1 and CCD2 coordinate systems (i.e., an angle between the CCD1 and CCD2 coordinate system transverse axes), α is a silicon wafer angle obtained by directly measuring the first photosensor image (i.e., an angle between the silicon wafer coordinate system transverse axis and the CCD1 coordinate system transverse axis), and ψ is a silicon wafer angle obtained by directly measuring the second photosensor image (i.e., an angle between the silicon wafer coordinate system transverse axis and the CCD2 coordinate system transverse axis). The above-mentioned coordinate conversion relationship is derived from the positional relationship of the coordinate systems in fig. 7, and when the positional relationship among the silicon wafer coordinate system, the CCD1 coordinate system and the CCD2 coordinate system changes, the above-mentioned coordinate conversion relationship also changes accordingly.
In order to accurately determine the offset of the silicon wafer, the embodiment provides a specific implementation manner of determining the offset of the silicon wafer based on the first coordinate and the second coordinate:
first, calculating the coordinates of a central point of a silicon wafer under a first coordinate system based on the first coordinates to obtain first coordinates of the central point.
The first coordinate is a coordinate value in a first coordinate system, and the first coordinate system is a coordinate system established when the first photoelectric sensor CCD1 detects the coordinates of the mark point on the silicon wafer, and may also be referred to as a CCD1 coordinate system. After the wafer fork sends the silicon wafer to the preset handover position, detecting the coordinate value of the first preset mark point under the CCD1 coordinate system based on the detection of the first photoelectric sensor CCD1, and recording the coordinate value as a first coordinate, such as when the first preset mark point comprises A1, B1 and C1, the first coordinate is expressed as: a1' (X) A1-CCD1 ',Y A1-CCD1 ')，B1'(X B1-CCD1 ',Y B1-CCD1 ') and C1' (X) C1-CCD1 ',Y C1-CCD1 ')。
The first included angle between the silicon wafer and the first coordinate system is determined based on the coordinates of each marking point in the first coordinate, the first preset marking point comprises two or more marking points, the first included angle between the silicon wafer and the first photoelectric sensor (namely, the included angle between the connecting line of the two marking points and the X axis of the CCD1 coordinate system) can be obtained based on the coordinates of any two marking points in the first preset marking point, for example, the included angle between the transverse axis of the coordinate system of the silicon wafer and the transverse axis of the first coordinate system can be obtained through direct measurement through B1' C1', and is recorded as a first included angle alpha '. In order to facilitate the measurement of the first included angle, when the mark point is set, the B1C1 and the X axis of the silicon wafer coordinate system can be parallel, and the included angle between the transverse axis of the silicon wafer coordinate system and the transverse axis of the first coordinate system can be directly calculated according to the coordinate value of the B1 'C1'.
And calculating a first target coordinate of the second preset mark point in the first coordinate system based on the first coordinate, the first included angle and the coordinate conversion relation. For example, the second preset mark point includes B2 and C2 based on A1' (X) in the above first coordinates A1-CCD1 ',Y A1-CCD1 '), a first included angle alpha ' between the silicon wafer and a transverse axis of the first coordinate system, and a coordinate conversion relation shown in the formula (1), and calculating a first target sitting mark of a first target coordinate A2 of the second preset mark point A2 in the first coordinate system as A2':
A2'(X A1-CCD1 '+Lcosα',Y A1-CCD1 '+Lsinα')
and acquiring the position information of the first preset mark point and the second preset mark point on the silicon wafer, and determining the coordinates of the central point of the silicon wafer under a first coordinate system based on the first target coordinates and the position information to obtain the first coordinates of the central point.
The position information of the first preset mark point and the second preset mark point on the silicon wafer comprises the distance L, A between A1 and A2 and the distance D between the X-axis of the silicon wafer coordinate system Y And the distance D between the A2 point and the Y axis of the silicon chip coordinate system X . According to the first target coordinates A2' (X A1-CCD1 '+Lcosα',Y A1-CCD1 '+Lsin alpha') and the distance L, D between A1 and A2 X And D Y Calculating the center point O of a silicon wafer coordinate system wafer Coordinate value O in CCD1 coordinate system wafer ' is noted as the first coordinate of the center point. Wherein the first coordinate O of the center point wafer ' is: o (O) wafer '(X A1-CCD1' +Lcosα'+D X cosα'+D Y sinα'，Y A1-CCD1' +Lsinα'+D X sinα'-D Y cosα')
And secondly, calculating the coordinates of the central point of the silicon chip under the second coordinate system based on the second coordinates to obtain second coordinates of the central point.
The second coordinate is a coordinate value in a second coordinate system, and the second coordinate system is a coordinate system established when the second photoelectric sensor CCD2 detects a mark point on the silicon wafer, and may also be referred to as a CCD2 coordinate system. When the silicon wafer moves from the preset handover position to the wafer carrying platform, the wafer loading of the silicon wafer is completed, the coordinate value of the second preset mark point under the CCD2 coordinate system is obtained based on the detection of the second photoelectric sensor CCD2 and is recorded as a second coordinate, such as when the second preset mark point comprises A2, B2 and C2, the second coordinate is expressed as: a2 "(X) A2-CCD2 ”,Y A2-CCD2 ”)，B2”(X B2-CCD2 ”,Y B2-CCD2 ") and C2" (X) C2-CCD2 ”,Y C2-CCD2 ”)。
And determining a second included angle between the silicon wafer and a transverse axis of the second coordinate system based on the coordinates of each marking point in the second preset marking points in the second coordinate system. The second preset mark points comprise two or more mark points, a second included angle (namely an included angle between a connecting line of the two mark points and an X axis of a CCD2 coordinate system) between the silicon wafer and the second photoelectric sensor can be obtained based on the coordinates of any two mark points in the second preset mark points, for example, the included angle between a transverse axis of the silicon wafer coordinate system and a transverse axis of the second coordinate system can be obtained through direct measurement of B2 ' C2 ', and the included angle is recorded as a second included angle psi '.
And calculating a second target coordinate of the second preset mark point under the first coordinate system based on the second coordinate, the second included angle and the coordinate conversion relation. For example, the second preset mark point comprises A2, A2 and A2, and based on the second coordinate, a second included angle between the silicon chip and the second photoelectric sensor and the coordinate conversion relation shown in the formula (1), a second target coordinate of the A2 point in the first coordinate system in the second preset mark point is calculated, and a second target seat mark of the A2 point in the first coordinate system is A2' ": a2' "(X) 0 +X A2-CCD2 ”cosφ-Y A2-CCD2 ”sinφ,Y 0 +Y A2-CCD2 ”cosφ+X A2-CCD2 ”sinφ)
And acquiring the position information of the first preset mark point and the second preset mark point on the silicon wafer, and determining the coordinates of the central point of the silicon wafer under the first coordinate system based on the second target coordinates and the position information to obtain the second coordinates of the central point.
According to the second target coordinates A2' "and the distance L, D between A1 and A2 X And D Y Calculating the center point O of a silicon wafer coordinate system wafer Coordinate value O in CCD1 coordinate system wafer "is noted as the center point second coordinate. Wherein the second coordinate of the center point O wafer The method is as follows:
O wafer ”(X 0 +X A2-CCD2 ”cosφ-Y A2-CCD2 ”sinφ+D X cos(φ-ψ')+D Y sin(φ-ψ')，(Y 0 +Y A2-CCD2 ”cosφ+X A2-CCD2 ”sinφ+D X sin(φ-ψ')-D Y cos(φ-ψ'))
and finally, determining the offset of the silicon wafer in the handover process based on the first coordinate of the center point and the second coordinate of the center point.
In a specific embodiment, the offset includes a lateral offset of the silicon wafer (i.e., an offset in an X direction during the wafer transfer between the upper and lower wafers), a longitudinal offset (i.e., an offset in a Y direction during the wafer transfer between the upper and lower wafers), and a wafer rotation angle (i.e., a rotation angle of the wafer relative to the Z axis during the wafer transfer between the upper and lower wafers).
And calculating a horizontal coordinate difference value between the first coordinate of the center point and the second coordinate of the center point to obtain the horizontal offset of the silicon wafer. And calculating the displacement of the silicon wafer in the X direction according to the Owafer 'and Owafer' coordinates:
Δx＝[X A1-CCD1' +Lcosα'+D X cosα'+D Y sinα']-[X 0 +X A2-CCD2 ”cosφ-Y A2-CCD2 ”sinφ+D X cos(φ-ψ')+D Y sin(φ-ψ')]；
and calculating a longitudinal coordinate difference value between the first coordinate of the center point and the second coordinate of the center point to obtain the longitudinal offset of the silicon wafer. And calculating the displacement of the silicon wafer in the Y direction according to the Owafer 'and Owafer' coordinates:
Δy＝[Y A1-CCD1' +Lsinα'+D X sinα'-D Y cosα']-[Y 0 +Y A2-CCD2 ”cosφ+X A2-CCD2 ”sinφ+D X sin(φ-ψ')-D Y cos(φ-ψ')]
and determining the silicon wafer corner Rz of the silicon wafer in the process of handover based on a first included angle alpha 'of the silicon wafer and a transverse axis of the first coordinate system and a second included angle phi' of the silicon wafer and a transverse axis of the second coordinate system. And after the wafer is subjected to wafer loading and handover, obtaining the rotation angle rz=phi-alpha '-psi' of the wafer relative to the Z axis.
According to the silicon wafer offset determination method provided by the embodiment, the offset of the silicon wafer is detected in the process of the silicon wafer being connected and loaded, so that the silicon wafer connection precision of the photoetching machine can be conveniently detected, and the accuracy of the silicon wafer offset detection is improved by detecting the offset of the silicon wafer by using the double CCD system.
Corresponding to the method for determining the offset of the silicon wafer provided by the above embodiment, the embodiment of the invention provides a method for detecting the handover precision of the silicon wafer, which can be applied to a photoetching machine, and mainly comprises the following steps:
Based on the silicon wafer offset determining method provided by the embodiment, the offset of the silicon wafer in the process of multiple times of cross-connection and loading is detected, and a plurality of groups of offset are obtained. The number of times of detecting the offset in the process of loading the silicon wafer can be any value of 50-100 times.
And carrying out normal distribution calculation on the plurality of groups of offset values to obtain the silicon wafer handover precision of the photoetching machine. The inventor evaluates a plurality of groups of offset by means of mean+3σ, finds that the repeatability of the offset on the silicon wafer accords with normal distribution, and obtains a repeated positioning mean value and a normalized value calculation formula based on the plurality of groups of offset:
the average value of the offset of the silicon wafer in the X direction is as follows:
the average value of the offset of the silicon wafer in the Y direction is as follows:
the average value of the silicon wafer corner Rz generated in the silicon wafer loading and connecting process is as follows:
the standard deviation of the offset of the silicon wafer in the X direction is as follows:
the standard deviation of the offset of the silicon wafer in the Y direction is as follows:
the standard deviation of the silicon wafer corner is as follows:
the silicon wafer handover precision of the photoetching machine can be represented by the standard deviation of the silicon wafer in the X-direction offset, the standard deviation of the silicon wafer in the Y-direction offset and the standard deviation of the silicon wafer corner. The n is the number of times (or offset) of detection of the offset of the silicon waferThe number of the (b) is the detection result of the X-direction offset of the ith silicon wafer and the detection result of the Y-direction offset of the ith silicon wafer. When the standard deviation satisfies 3 sigma at the same time x ≤2.89μm，3σ y Less than or equal to 2.89 mu m and 3 sigma Rz When the thickness is less than or equal to 42.72 mu rad, determining that the silicon wafer joint loading precision of the photoetching machine meets the requirement.
The silicon wafer handover precision detection method provided by the embodiment is used for offline testing of the silicon wafer handover precision of the photoetching machine, and the repeated positioning precision of the silicon wafer handover process can be tested by a manipulator silicon wafer transmission device arranged on the photoetching machine and a detection and test system of the photoetching machine during online testing.
Corresponding to the method for determining the silicon wafer offset provided in the above embodiment, the embodiment of the present invention provides a device for determining the silicon wafer offset, referring to a schematic structure diagram of the device for determining the silicon wafer offset shown in fig. 8, the device includes the following modules:
the first obtaining module 81 is configured to obtain, based on the first photoelectric sensor, a first coordinate of a first preset mark point on the silicon wafer when the silicon wafer is located at a preset handover position; the focal plane of the first photoelectric sensor is positioned on the upper surface of the silicon wafer at the preset junction.
A second obtaining module 82, configured to obtain, based on a second photoelectric sensor, a second coordinate of a second preset mark point on the silicon wafer when the silicon wafer is located on the wafer carrier; the focal plane of the second photoelectric sensor is positioned on the upper surface of the silicon wafer at the wafer bearing table.
A determining module 83, configured to determine an offset of the silicon wafer based on the first coordinate and the second coordinate.
According to the silicon wafer offset determining device, the two photoelectric sensors are arranged, the silicon wafer at the preset joint position is positioned based on the first photoelectric sensor, the silicon wafer at the preset joint position and the silicon wafer at the wafer bearing platform are positioned based on the second photoelectric sensor, the silicon wafer at the preset joint position and the silicon wafer at the wafer bearing platform can be accurately positioned, the offset of the silicon wafer is accurately calculated through the first coordinate and the second coordinate obtained through positioning, the position of the photoelectric sensor is not required to be moved in the process of joining the silicon wafers, positioning errors caused by up-and-down movement of the photoelectric sensor are avoided, and the accuracy of silicon wafer offset detection is improved.
In one embodiment, the first coordinate is a coordinate in a first coordinate system, and the second coordinate is a coordinate in a second coordinate system; the determining module 83 is further configured to calculate a coordinate of a center point of the silicon wafer under the first coordinate system based on the first coordinate, to obtain a first coordinate of the center point; calculating the coordinates of the central point of the silicon chip under a second coordinate system based on the second coordinates to obtain second coordinates of the central point; and determining the offset of the silicon wafer in the handover process based on the first coordinate of the center point and the second coordinate of the center point.
In one embodiment, the apparatus further comprises:
the second determining module is used for determining the coordinate conversion relation between the first preset mark point and the second preset mark point based on the first preset mark point and the second preset mark point.
In one embodiment, the first preset mark point includes two or more mark points; the determining module 83 is further configured to determine a first included angle between the silicon wafer and a transverse axis of the first coordinate system based on coordinates of each marking point in the first coordinate; calculating a first target coordinate of a second preset mark point in a first coordinate system based on the first coordinate, the first included angle and the coordinate conversion relation; and acquiring the position information of the first preset mark point and the second preset mark point on the silicon wafer, and determining the coordinates of the central point of the silicon wafer under a first coordinate system based on the first target coordinates and the position information to obtain the first coordinates of the central point.
In one embodiment, the second preset mark point includes two or more mark points; the determining module 83 is further configured to determine a second included angle between the silicon wafer and a transverse axis of the second coordinate system based on coordinates of each of the second preset mark points in the second coordinate system; calculating a second target coordinate of a second preset mark point under the first coordinate system based on the second coordinate, the second included angle and the coordinate conversion relation; and acquiring the position information of the first preset mark point and the second preset mark point on the silicon wafer, and determining the coordinates of the central point of the silicon wafer under the first coordinate system based on the second target coordinates and the position information to obtain the second coordinates of the central point.
In one embodiment, the offset includes a lateral offset, a longitudinal offset, and a wafer corner; the determining module 83 is further configured to calculate a difference value between the first center point coordinate and the second center point coordinate to obtain a lateral offset of the silicon wafer; calculating a longitudinal coordinate difference value between the first center point coordinate and the second center point coordinate to obtain a longitudinal offset of the silicon wafer; and determining the silicon wafer corner of the silicon wafer in the handover process based on the first included angle between the silicon wafer and the transverse axis of the first coordinate system and the second included angle between the silicon wafer and the transverse axis of the second coordinate system.
According to the silicon wafer offset determining device provided by the embodiment, the offset of the silicon wafer is detected in the process of the silicon wafer being connected and loaded, so that the silicon wafer connection precision of the photoetching machine can be conveniently detected, and the accuracy of the silicon wafer offset detection is improved by detecting the offset of the silicon wafer by using the double CCD system.
The device provided in this embodiment has the same implementation principle and technical effects as those of the silicon wafer offset determining method embodiment, and for the sake of brevity, reference may be made to the corresponding content in the foregoing method embodiment where the device embodiment is not mentioned.
Corresponding to the method for detecting the silicon wafer handover accuracy provided in the foregoing embodiment, the embodiment of the present invention further provides a device for detecting the silicon wafer handover accuracy, where the device includes the following modules:
The detection module is used for detecting the offset of the silicon wafer in the process of multiple times of splicing and loading based on the silicon wafer offset determining device provided by the embodiment, so as to obtain multiple groups of offset.
And the calculation module is used for carrying out normal distribution calculation on a plurality of groups of offset values to obtain the silicon wafer handover precision of the photoetching machine.
The silicon wafer handover precision detection device provided by the embodiment is used for offline testing of the silicon wafer handover precision of the photoetching machine, and the repeated positioning precision of the silicon wafer handover process can be tested by a manipulator silicon wafer transmission device arranged on the photoetching machine and a detection and test system of the photoetching machine during online testing.
The device provided in this embodiment has the same implementation principle and technical effects as those of the foregoing silicon wafer handover accuracy detection method embodiment, and for brevity, reference may be made to corresponding contents in the foregoing method embodiment for a part of description of the device embodiment that is not mentioned.
Corresponding to the method and the device provided by the foregoing embodiments, the embodiment of the present invention further provides a silicon wafer positioning device, where the system includes: the device comprises a first photoelectric sensor, a second photoelectric sensor, a processor and a storage device; the storage device stores a computer program which, when executed by the processor, performs the silicon wafer offset determination method or the silicon wafer handover accuracy detection method provided by the above embodiment.
An embodiment of the present invention provides an electronic device, which may be disposed in a lithographic apparatus, as shown in a schematic structural diagram of the electronic device in fig. 9, where the electronic device includes a processor 91 and a memory 92, where the memory stores a computer program that may run on the processor, and the processor implements the steps of the method provided in the foregoing embodiment when executing the computer program.
Referring to fig. 9, the electronic device further includes: the bus 94 and the communication interface 93, and the processor 91, the communication interface 93, and the memory 92 are connected by the bus 94. The processor 91 is arranged to execute executable modules, such as computer programs, stored in the memory 92.
The memory 92 may include a high-speed random access memory (RAM, random Access Memory), and may further include a non-volatile memory (non-volatile memory), such as at least one magnetic disk memory. The communication connection between the system network element and the at least one other network element is implemented via at least one communication interface 93 (which may be wired or wireless), and may use the internet, a wide area network, a local network, a metropolitan area network, etc.
Bus 94 may be an ISA (Industry Standard Architecture ) bus, a PCI (Peripheral Component Interconnect, peripheral component interconnect standard) bus, or an EISA (Extended Industry Standard Architecture ) bus, among others. The buses may be classified as address buses, data buses, control buses, etc. For ease of illustration, only one bi-directional arrow is shown in fig. 9, but not only one bus or one type of bus.
The memory 92 is configured to store a program, and the processor 91 executes the program after receiving an execution instruction, and a method executed by the apparatus for flow defining disclosed in any of the foregoing embodiments of the present invention may be applied to the processor 91 or implemented by the processor 91.
The processor 91 may be an integrated circuit chip with signal processing capabilities. In implementation, the steps of the above method may be performed by integrated logic circuits of hardware in the processor 91 or by instructions in the form of software. The processor 91 may be a general-purpose processor, including a central processing unit (Central Processing Unit, CPU), a network processor (Network Processor, NP), and the like. But may also be a digital signal processor (Digital Signal Processing, DSP for short), application specific integrated circuit (Application Specific Integrated Circuit, ASIC for short), off-the-shelf programmable gate array (Field-Programmable Gate Array, FPGA for short), or other programmable logic device, discrete gate or transistor logic device, discrete hardware components. The disclosed methods, steps, and logic blocks in the embodiments of the present invention may be implemented or performed. A general purpose processor may be a microprocessor or the processor may be any conventional processor or the like. The steps of the method disclosed in connection with the embodiments of the present invention may be embodied directly in the execution of a hardware decoding processor, or in the execution of a combination of hardware and software modules in a decoding processor. The software modules may be located in a random access memory, flash memory, read only memory, programmable read only memory, or electrically erasable programmable memory, registers, etc. as well known in the art. The storage medium is located in a memory 92 and the processor 91 reads the information in the memory 92 and in combination with its hardware performs the steps of the above method.
Embodiments of the present invention provide a computer readable medium storing computer executable instructions that, when invoked and executed by a processor, cause the processor to implement the methods described in the above embodiments.
It will be clear to those skilled in the art that, for convenience and brevity of description, the specific working process of the system described above may refer to the corresponding process in the foregoing embodiment, which is not described in detail herein.
The computer program product of the silicon wafer offset determining method and the silicon wafer handover accuracy detecting method provided by the embodiments of the present invention includes a computer readable storage medium storing program codes, and the instructions included in the program codes may be used to execute the method described in the foregoing method embodiment, and specific implementation may refer to the method embodiment and will not be described herein.
In addition, in the description of embodiments of the present invention, unless explicitly stated and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
The functions, if implemented in the form of software functional units and sold or used as a stand-alone product, may be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention may be embodied essentially or in a part contributing to the prior art or in a part of the technical solution, in the form of a software product stored in a storage medium, comprising several instructions for causing a computer device (which may be a personal computer, a server, a network device, etc.) to perform all or part of the steps of the method according to the embodiments of the present invention. And the aforementioned storage medium includes: a U-disk, a removable hard disk, a Read-Only Memory (ROM), a random access Memory (RAM, random Access Memory), a magnetic disk, or an optical disk, or other various media capable of storing program codes.
In the description of the present invention, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
Finally, it should be noted that: the above examples are only specific embodiments of the present invention, and are not intended to limit the scope of the present invention, but it should be understood by those skilled in the art that the present invention is not limited thereto, and that the present invention is described in detail with reference to the foregoing examples: any person skilled in the art may modify or easily conceive of the technical solution described in the foregoing embodiments, or perform equivalent substitution of some of the technical features, while remaining within the technical scope of the present disclosure; such modifications, changes or substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention, and are intended to be included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (8)
1. The silicon wafer offset determining method is characterized by comprising the following steps:
when a silicon wafer is positioned at a preset handover position, acquiring a first coordinate of a first preset mark point on the silicon wafer based on a first photoelectric sensor; the focal plane of the first photoelectric sensor is positioned on the upper surface of the silicon wafer at the preset junction;
When the silicon wafer is positioned on the wafer bearing table, acquiring a second coordinate of a second preset mark point on the silicon wafer based on a second photoelectric sensor; the focal plane of the second photoelectric sensor is positioned on the upper surface of the silicon wafer at the wafer bearing platform;
determining the offset of the silicon wafer based on the first coordinate and the second coordinate;
the first coordinates are coordinates in a first coordinate system, and the second coordinates are coordinates in a second coordinate system; the step of determining the offset of the silicon wafer based on the first coordinate and the second coordinate comprises the following steps:
calculating the coordinates of the central point of the silicon chip under the first coordinate system based on the first coordinates to obtain first coordinates of the central point;
calculating the coordinates of the central point of the silicon chip under the first coordinate system based on the second coordinates to obtain second coordinates of the central point;
the offset comprises a transverse offset, a longitudinal offset and a silicon wafer corner; calculating a horizontal coordinate difference value between the first coordinate of the center point and the second coordinate of the center point to obtain the horizontal offset;
calculating a longitudinal coordinate difference value between the first coordinate of the center point and the second coordinate of the center point to obtain the longitudinal offset;
And determining the silicon wafer corner of the silicon wafer in the handover process based on a first included angle between the silicon wafer and the transverse axis of the first coordinate system and a second included angle between the silicon wafer and the transverse axis of the second coordinate system.
2. The method according to claim 1, wherein the method further comprises:
and determining the coordinate conversion relation between the first preset mark point and the second preset mark point based on the first preset mark point and the second preset mark point.
3. The method of claim 2, wherein the first preset mark points comprise two or more mark points; the step of calculating the coordinates of the central point of the silicon wafer under the first coordinate system based on the first coordinates to obtain the first coordinates of the central point comprises the following steps:
determining a first included angle between the silicon chip and a transverse axis of the first coordinate system based on the coordinates of each marking point in the first coordinate;
calculating a first target coordinate of the second preset mark point in the first coordinate system based on the first coordinate, the first included angle and the coordinate conversion relation;
and acquiring the position information of the first preset mark point and the second preset mark point on the silicon wafer, and determining the coordinate of the central point of the silicon wafer under the first coordinate system based on the first target coordinate and the position information to obtain the first coordinate of the central point.
4. The method of claim 2, wherein the second preset mark points comprise two or more mark points; the step of calculating the coordinates of the center point of the silicon wafer under the first coordinate system based on the second coordinates to obtain the second coordinates of the center point comprises the following steps:
determining a second included angle between the silicon chip and a transverse axis of the second coordinate system based on the coordinates of each marking point in the second preset marking points in the second coordinate system;
calculating a second target coordinate of the second preset mark point under the first coordinate system based on the second coordinate, the second included angle and the coordinate conversion relation;
and acquiring the position information of the first preset mark point and the second preset mark point on the silicon wafer, and determining the coordinate of the central point of the silicon wafer under the first coordinate system based on the second target coordinate and the position information to obtain a second coordinate of the central point.
5. The silicon wafer handover precision detection method is characterized by being applied to a photoetching machine, and comprises the following steps:
detecting the offset of the silicon wafer in the process of multiple times of cross-connection and loading based on the silicon wafer offset determining method of any one of claims 1 to 4 to obtain multiple groups of offset;
And carrying out normal distribution calculation on the plurality of groups of offset values to obtain the silicon wafer handover precision of the photoetching machine.
6. A silicon wafer offset determination apparatus, comprising:
the first acquisition module is used for acquiring a first coordinate of a first preset mark point on the silicon wafer based on a first photoelectric sensor when the silicon wafer is positioned at a preset handover position; the focal plane of the first photoelectric sensor is positioned on the upper surface of the silicon wafer at the preset junction;
the second acquisition module is used for acquiring a second coordinate of a second preset mark point on the silicon wafer based on a second photoelectric sensor when the silicon wafer is positioned on the wafer bearing table; the focal plane of the second photoelectric sensor is positioned on the upper surface of the silicon wafer at the wafer bearing platform;
the determining module is used for determining the offset of the silicon wafer based on the first coordinate and the second coordinate;
the first coordinates are coordinates in a first coordinate system, and the second coordinates are coordinates in a second coordinate system; the determining module is used for calculating the coordinates of the central point of the silicon wafer under the first coordinate system based on the first coordinates to obtain first coordinates of the central point; calculating the coordinates of the central point of the silicon chip under the first coordinate system based on the second coordinates to obtain second coordinates of the central point; the offset comprises a transverse offset, a longitudinal offset and a silicon wafer corner; calculating a horizontal coordinate difference value between the first coordinate of the center point and the second coordinate of the center point to obtain the horizontal offset; calculating a longitudinal coordinate difference value between the first coordinate of the center point and the second coordinate of the center point to obtain the longitudinal offset; and determining the silicon wafer corner of the silicon wafer in the handover process based on a first included angle between the silicon wafer and the transverse axis of the first coordinate system and a second included angle between the silicon wafer and the transverse axis of the second coordinate system.
7. The utility model provides a silicon chip handing-over precision detection device which characterized in that is applied to the lithography machine, silicon chip handing-over precision detection device includes:
the detection module is used for detecting the offset of the silicon wafer in the process of multiple-time cross-connection loading based on the silicon wafer offset determining device of claim 6 to obtain multiple groups of offset;
and the calculation module is used for carrying out normal distribution calculation on the plurality of groups of offset values to obtain the silicon wafer handover precision of the photoetching machine.
8. A silicon wafer positioning device, comprising: the device comprises a first photoelectric sensor, a second photoelectric sensor, a processor and a storage device;
the storage means has stored thereon a computer program which, when executed by the processor, performs the method of any one of claims 1 to 4 or claim 5.
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Citations (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0936202A (en) * | 1995-07-14 | 1997-02-07 | Nikon Corp | Positioning method |
| US5654553A (en) * | 1993-06-10 | 1997-08-05 | Nikon Corporation | Projection exposure apparatus having an alignment sensor for aligning a mask image with a substrate |
| JPH11326229A (en) * | 1998-05-21 | 1999-11-26 | Hitachi Electron Eng Co Ltd | Foreign matter inspection apparatus |
| JP2005057222A (en) * | 2003-08-07 | 2005-03-03 | Canon Inc | Mark detection device, method, and program, and aligner, method for manufacturing device, and device |
| KR20050121338A (en) * | 2004-06-22 | 2005-12-27 | 삼성전자주식회사 | Miss alignment detector of semiconductor wafer |
| KR20080068981A (en) * | 2007-01-22 | 2008-07-25 | 삼성전자주식회사 | Method of adjusting a position of a wafer and method of measuring a wafer |
| KR20090056874A (en) * | 2007-11-30 | 2009-06-03 | 노벨러스 시스템즈, 인코포레이티드 | Wafer position correction |
| CN102681369A (en) * | 2012-05-10 | 2012-09-19 | 中国科学院光电技术研究所 | Alignment method suitable for maskless photoetching machine |
| CN103472680A (en) * | 2012-06-08 | 2013-12-25 | 上海微电子装备有限公司 | Silicon wafer pre-alignment apparatus |
| CN103871926A (en) * | 2012-12-10 | 2014-06-18 | 上海华虹宏力半导体制造有限公司 | Device and operating method for preventing silicon wafer from offset and cracking in cavity transporting process |
| CN103972135A (en) * | 2013-01-25 | 2014-08-06 | 上海微电子装备有限公司 | Silicon wafer accurate positioning and conveying device and positioning method |
| CN104576483A (en) * | 2013-10-25 | 2015-04-29 | 上海微电子装备有限公司 | Silicon slice prealignment device and method |
| CN105619406A (en) * | 2015-12-31 | 2016-06-01 | 北京七星华创电子股份有限公司 | Calibration method for sheet forks of multi-fingered mechanical hand |
| CN106997159A (en) * | 2016-01-22 | 2017-08-01 | 上海微电子装备有限公司 | Wafer pre-alignment mechanism, exposure device and exposure method |
| CN107976875A (en) * | 2016-10-24 | 2018-05-01 | 上海微电子装备（集团）股份有限公司 | A kind of substrate alignment device and alignment methods |
| CN110517320A (en) * | 2018-12-26 | 2019-11-29 | 深圳市汇众智慧科技有限公司 | Based on the high speed and super precision automatic aligning method of UVW system, device, computer equipment |
| CN112053985A (en) * | 2020-07-03 | 2020-12-08 | 北京华卓精科科技股份有限公司 | Wafer alignment device and alignment method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100461024B1 (en) * | 2002-04-15 | 2004-12-13 | 주식회사 이오테크닉스 | Chip-scale marker and marking method |
-
2021
- 2021-02-25 CN CN202110210408.1A patent/CN113035734B/en active Active
Patent Citations (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5654553A (en) * | 1993-06-10 | 1997-08-05 | Nikon Corporation | Projection exposure apparatus having an alignment sensor for aligning a mask image with a substrate |
| JPH0936202A (en) * | 1995-07-14 | 1997-02-07 | Nikon Corp | Positioning method |
| JPH11326229A (en) * | 1998-05-21 | 1999-11-26 | Hitachi Electron Eng Co Ltd | Foreign matter inspection apparatus |
| JP2005057222A (en) * | 2003-08-07 | 2005-03-03 | Canon Inc | Mark detection device, method, and program, and aligner, method for manufacturing device, and device |
| KR20050121338A (en) * | 2004-06-22 | 2005-12-27 | 삼성전자주식회사 | Miss alignment detector of semiconductor wafer |
| KR20080068981A (en) * | 2007-01-22 | 2008-07-25 | 삼성전자주식회사 | Method of adjusting a position of a wafer and method of measuring a wafer |
| KR20090056874A (en) * | 2007-11-30 | 2009-06-03 | 노벨러스 시스템즈, 인코포레이티드 | Wafer position correction |
| CN102681369A (en) * | 2012-05-10 | 2012-09-19 | 中国科学院光电技术研究所 | Alignment method suitable for maskless photoetching machine |
| CN103472680A (en) * | 2012-06-08 | 2013-12-25 | 上海微电子装备有限公司 | Silicon wafer pre-alignment apparatus |
| CN103871926A (en) * | 2012-12-10 | 2014-06-18 | 上海华虹宏力半导体制造有限公司 | Device and operating method for preventing silicon wafer from offset and cracking in cavity transporting process |
| CN103972135A (en) * | 2013-01-25 | 2014-08-06 | 上海微电子装备有限公司 | Silicon wafer accurate positioning and conveying device and positioning method |
| CN104576483A (en) * | 2013-10-25 | 2015-04-29 | 上海微电子装备有限公司 | Silicon slice prealignment device and method |
| CN105619406A (en) * | 2015-12-31 | 2016-06-01 | 北京七星华创电子股份有限公司 | Calibration method for sheet forks of multi-fingered mechanical hand |
| CN106997159A (en) * | 2016-01-22 | 2017-08-01 | 上海微电子装备有限公司 | Wafer pre-alignment mechanism, exposure device and exposure method |
| CN107976875A (en) * | 2016-10-24 | 2018-05-01 | 上海微电子装备（集团）股份有限公司 | A kind of substrate alignment device and alignment methods |
| CN110517320A (en) * | 2018-12-26 | 2019-11-29 | 深圳市汇众智慧科技有限公司 | Based on the high speed and super precision automatic aligning method of UVW system, device, computer equipment |
| CN112053985A (en) * | 2020-07-03 | 2020-12-08 | 北京华卓精科科技股份有限公司 | Wafer alignment device and alignment method thereof |
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