CN112909104A - Silicon-based thin-film solar cell with double-layer split grating structure - Google Patents
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention discloses a silicon-based thin-film solar cell with a double-layer split grating structure, which comprises an Ag substrate layer, wherein an AZO passivation layer, a lower grating layer, a silicon absorption layer, an upper grating layer and an AZO anti-reflection layer are arranged on the Ag substrate layer by layer; the lower grating layer and the upper grating layer respectively comprise at least one grating period, and each grating period is formed by sequentially and alternately arranging Si strips and AZO strips along the width direction of the silicon-based thin-film solar cell. In the structure of the invention, more diffraction orders can be formed due to the fact that the phases between the upper grating layer and the lower grating layer are not matched and the widths are unequal, the light absorption efficiency of the silicon-based thin-film solar cell in the whole waveband is improved, and the absorption efficiency in the near-infrared waveband is obviously improved.
Description
Technical Field
The invention relates to the technical field of silicon-based thin-film solar cells, in particular to a silicon-based thin-film solar cell with a double-layer split grating structure.
Background
In recent years, due to problems such as exhaustion of energy and environmental pollution, people are eagerly looking for and developing renewable clean energy for industrial production and residential life. The solar cell converts solar energy into electric energy, can obtain clean energy and has attracted wide attention at home and abroad. The design principle of the solar cell is to improve the photoelectric conversion efficiency and reduce the processing and manufacturing cost. Currently common solar cells include silicon-based solar cells, dye-sensitized solar cells, gallium arsenide solar cells, cadmium telluride solar cells, and perovskite solar cells, among others.
Because the silicon material has the advantages of low cost, abundant reserves, no toxicity and mature processing technology, the silicon solar cell gradually occupies most of the global photovoltaic market share, and the application is very wide. The silicon-based thin-film solar cell has the advantages of abundant raw material silicon and high conversion efficiency compared with the similar solar cell, so that the silicon-based thin-film solar cell can be commercially applied in a large scale. Compared with the traditional crystalline silicon solar cell, the thickness of the silicon-based thin-film solar cell is in the micron or nanometer level, so that the silicon-based thin-film solar cell is an ideal device for reducing material cost and improving photoelectric conversion efficiency.
However, since crystalline silicon is an indirect bandgap semiconductor material, and positions of electrons in the indirect bandgap semiconductor before and after transition are different in K space, the K value changes, electrons release energy to crystal lattices with a high probability, and are converted into phonons, and the phonons become heat energy to be released, and the energy is difficult to be released in the form of photons, so that the light absorption efficiency of the indirect bandgap semiconductor material is low. In order to increase the absorption of the solar cell on incident light, scientific researchers increase the reflection times and path length of light in the absorption layer by designing various grating structures so as to improve the light absorption efficiency of the solar cell. However, the silicon-based thin-film solar cell has the problems of weak light absorption in the near-infrared band, large photocurrent loss and low light absorption efficiency. Therefore, how to improve the light absorption efficiency of the silicon-based thin-film solar cell by designing the grating structure of the silicon-based thin-film solar cell has become a focus of attention of researchers at home and abroad.
By adding a grating structure above or below the silicon layer, the thin film solar cell will have better light absorption efficiency. The reason is that the front grating has good anti-reflection performance in a short wave band (the wavelength range is 300-700 nm), and the rear grating can generate good diffraction effect in a long wave band (the wavelength range is 700-1100 nm). In addition, the front grating and the rear grating are simultaneously applied to the thin-film solar cell, more higher diffraction orders can be formed, the interaction among various modes can be greatly excited, the propagation angle of light can be diffracted into a reflection angle larger than the internal reflection critical angle, and therefore the propagation path of the light in the silicon layer is effectively increased. Zhan et al designed a single crystal silicon double interface grating structure, combining the sinusoidal plasma grating on the front dielectric nanowall and the back reflector, the short circuit current density was improved by 52% (J.Zhang, Z.Yu, Y.Liu, H.Chai, J.Hao, and H.Ye, "Dual interface gratings for absorption enhancement in the crystal silicon cells," opt.Commun.399, 62-67 (2017)). Chriki et al have proposed an ultra-thin solar cell with an absorber layer thickness of 100nm, and by varying the lateral relative positions of the front and back gratings, it has been found that an asymmetric double-layer grating structure can provide more modal interactions (R.Chriki, A.yanai, J.Shappir, and U.Levy, "Enhanced efficiency of thin film solar cells using a shifted dual patterning structure," opt.express 21, A382-A391 (2013)). Abass et al designed a double-interface triangular grating structure with an absorption layer thickness of 200nm, and found that the light absorption efficiency of the asymmetric grating structure is better than that of the symmetric grating structure (a.abass, k.q.le, a.al. interfaces, m.burglman, and b.mas, "dual interface gratings for broadband absorption enhancement in thin-film solar cells," phys.rev.b 85,115449 (2012)).
The grating structure is used as an effective broadband light trapping structure in a silicon-based thin-film solar cell, and parameters such as the number, the shape, the period, the duty ratio, the size, the spatial distribution structure and the like of the grating are considered during design. In fact, researchers have paid less attention to grating structures, particularly double-layer grating structures, and still need to do a lot of research work on them.
Disclosure of Invention
The invention provides a silicon-based thin-film solar cell with a double-layer split grating structure, aiming at solving the problem that the silicon-based thin-film solar cell in the prior art is low in light absorption efficiency in a near infrared band.
In order to achieve the purpose, the invention adopts the following technical scheme:
a silicon-based thin-film solar cell with a double-layer split grating structure is characterized in that: the silicon-based thin-film solar cell comprises an Ag substrate layer, wherein an AZO passivation layer, a lower grating layer, a silicon absorption layer, an upper grating layer and an AZO anti-reflection layer are arranged on the Ag substrate layer in a layer-by-layer manner; the lower grating layer and the upper grating layer respectively comprise at least one grating period; the grating period is formed by sequentially and alternately arranging Si strips and AZO strips along the width direction of the silicon-based thin-film solar cell.
Preferably, the thickness of the Ag base layer is 200nm, the thickness of the AZO passivation layer is 50nm, the thickness of the lower grating layer is 100nm, the thickness of the silicon absorption layer is 400nm, the thickness of the upper grating layer is 100nm, and the thickness of the AZO anti-reflection layer is 60 nm.
The silicon-based thin-film solar cell provided by the invention also has the following characteristics:
in the upper grating layer, the total number of Si strips and AZO strips in one grating period is 2N + 1; of N strips from left to right, each strip has a width of w-n＝Q×(1-a)(a+b-1)n-1N is a positive integer from 1 to N in sequence; from right to left, each strip has a width w+n＝Q×(1-b)(a+b-1)n-1N is a positive integer from 1 to N in sequence; the width of the central strip is du＝Q×(a+b-1)N；
In the lower grating layer, the total number of Si strips and AZO strips in one grating period is 2N + 1; of the N strips from left to right, each strip has a width of t-n＝Q×(1-c)(c+d-1)n-1N is a positive integer from 1 to N in sequence; from right to left, each strip has a width of t+n＝Q×(1-d)(c+d-1)n-1N is a positive integer from 1 to N in sequence; the width of the central strip is dd＝Q×(c+d-1)N；
Wherein: n represents the splitting series of the upper and lower grating layers, and takes a positive integer; q is the width of one grating period; a. b, c and d are splitting factors, and the values are in the range of 0.5-1.
Preferably, Q is 500nm, and N is 3.
Compared with the prior art, the invention has the advantages that:
1. compared with the gratings which are regularly arranged, the phase mismatching of the upper grating and the lower grating well increases the diffraction order and the propagation path of light in the absorption layer, and the electromagnetic field intensity in the absorption layer is regionally enhanced, so that the light absorption efficiency is effectively improved, better absorption enhancement is realized, and the absorption enhancement effect in a near-infrared band is obvious.
2. The upper grating layer and the lower grating layer are formed by sequentially and alternately arranging the Si strips and the AZO strips, so that the use amount of silicon can be reduced, the material cost is saved, the processing and the manufacturing are easy, and the processing cost is reduced.
Drawings
Fig. 1 to fig. 3 are schematic plan views of a silicon-based thin-film solar cell with a double-layer split grating structure according to the present invention, where fig. 1 to fig. 3 correspond to splitting orders N1, 2, and 3, respectively.
Fig. 4 and 5 are schematic plane structures of one grating period of the upper and lower grating layers in a silicon-based thin-film solar cell (with a splitting order N equal to 3) with a double-layer split grating structure according to the present invention, where fig. 4 and 5 correspond to the upper and lower grating layers, respectively.
Fig. 6 is a schematic plane structure diagram of a silicon-based thin-film solar cell of a comparative flat-plate structure (without upper and lower grating layers) according to the present invention, wherein the thickness of the silicon layer is (400+ H) nm.
Fig. 7 is an absorption spectrum diagram of a silicon-based thin-film solar cell with a double-layer split grating structure and a silicon-based thin-film solar cell with a flat plate structure according to the present invention.
Fig. 8 is an absorption enhancement spectrum of the silicon-based thin-film solar cell with the double-layer split grating structure according to the present invention, which is obtained by dividing the absorption spectrum of the silicon-based thin-film solar cell with the double-layer split grating structure in fig. 7 by the absorption spectrum of the silicon-based thin-film solar cell with the flat plate structure.
Fig. 9 is a distribution diagram of electric field intensity of a silicon-based thin-film solar cell with a double-layer split grating structure under TE polarized light and TM polarized light at two absorption enhancement peaks in fig. 8;
fig. 10 is a magnetic field intensity distribution diagram of a silicon-based thin-film solar cell with a double-layer split grating structure under TE polarized light and TM polarized light at two absorption enhancement peaks of fig. 8 according to the present invention;
reference numbers in the figures: 1-AZO anti-reflection layer, 2-upper grating layer, 3-silicon absorption layer, 4-lower grating layer, 5-AZO passivation layer and 6-Ag substrate layer.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention.
The silicon-based thin-film solar cell with the double-layer split grating structure comprises an Ag substrate layer, wherein an AZO passivation layer, a lower grating layer, a silicon absorption layer, an upper grating layer and an AZO anti-reflection layer are arranged on the Ag substrate layer in a layer-by-layer mode. The lower grating layer and the upper grating layer respectively comprise at least one grating period; the grating period is formed by sequentially and alternately arranging Si strips and AZO strips along the width direction of the silicon-based thin-film solar cell. Fig. 1 to fig. 3 illustrate the planar structure of a silicon-based thin-film solar cell with a double-layer split grating structure with one grating period.
Wherein: the thickness of the Ag substrate layer is 200nm, the thickness of the AZO passivation layer is 50nm, the thickness of the silicon absorption layer is 400nm, the thickness of the upper grating layer and the lower grating layer is H (the value is in the range of 80-120 nm), and the thickness of the AZO anti-reflection layer is 60 nm.
In the upper grating layer, the total number of Si strips and AZO strips in one grating period is 2N + 1; of N strips from left to right, each strip has a width of w-n＝Q×(1-a)(a+b-1)n-1N is a positive integer from 1 to N in sequence; from right to left, each strip has a width w+n＝Q×(1-b)(a+b-1)n-1N is a positive integer from 1 to N in sequence; the width of the central strip is du＝Q×(a+b-1)N。
In the lower grating layer, the total number of Si strips and AZO strips in one grating period is 2N + 1; of the N strips from left to right, each strip has a width of t-n＝Q×(1-c)(c+d-1)n-1N is a positive integer from 1 to N in sequence; from right to left, each strip has a width of t+n＝Q×(1-d)(c+d-1)n-1N is a positive integer from 1 to N in sequence; the width of the central strip is dd＝Q×(c+d-1)N。
Wherein: n represents the splitting series of the upper and lower grating layers, and takes a positive integer; q is the width of one grating period and takes 500 nm; a. b, c and d are splitting factors, and the values are in the range of 0.5-1.
Fig. 1 to 3 are schematic plane structures of a silicon-based thin-film solar cell having a double-layer split grating structure in which the number N of split levels is 1, 2, and 3, respectively.
Referring to fig. 4 and 5, the specific positions and widths of the Si strips and the AZO strips in one grating period in the upper grating layer and the lower grating layer are determined by the splitting order N and the splitting factors a, b, c and d.
The main working principle of the silicon-based thin-film solar cell with the double-layer split structure for improving the light absorption efficiency is the light diffraction and optical waveguide mode. The AZO material is used as the incident layer of the cell because on one hand, the AZO material is a transparent conductive oxide and has good conductivity; on the other hand, the AZO material also has a good anti-reflection effect, and can well reduce the reflection loss of light, so that more light can enter the cell, and the light trapping effect and the light absorption of the thin-film solar cell are improved. The phase mismatch of the upper grating and the lower grating can form more high diffraction orders, so that the propagation path of light in the thin-film solar cell is greatly increased, and the light absorption efficiency of the Si absorption layer is effectively improved. The Ag substrate has excellent opacity, and light leakage loss is reduced well. The design of each layer is to reduce the reflection and transmission of the thin film solar cell and improve the light trapping effect of the whole cell to the maximum extent.
The simulation software used for the two-dimensional simulation is FDTD Solution software developed by Lumerical corporation, and a finite time domain difference method is utilized to simulate the silicon-based thin-film solar cell model with the double-layer split grating structure. Boundary conditions in the x direction (i.e., the width direction of the silicon-based thin-film solar cell) of the model are set as periodic boundary conditions, and boundary conditions in the y direction (i.e., the thickness direction of the silicon-based thin-film solar cell) are set as Perfect Matching Layer (PML) boundary conditions. The incident light source was set to a plane wave with AM1.5, incident vertically downward along the y-axis direction from the interface of the AZO anti-reflection layer and air. The wavelength band involved in the simulation is 300-1100 nm, and the step length is set to be 2nm so as to ensure the accuracy and precision of the simulation. The simulations were performed under Transverse Electric (TE) polarized light and Transverse Magnetic (TM) polarized light, respectively, and the calculation results of the simulations under unpolarized light were the average of the calculation results of the simulations under TE polarized light and TM polarized light.
In order to quantify the light absorption performance of the silicon-based thin film solar cell, the photoproduction current density J is introducedphThe calculation formula is as follows:
where e is the electron electric quantity, h is the Planck constant, c is the propagation speed of light in vacuum, λ is the wavelength value, IAM1.5(λ) is the AM1.5 incident light spectrum, and A (λ) is the light absorption spectrum.
In the above formula, the photo-generated current density JphMainly depends on the optical absorption spectrum a (λ), and the calculation formula is:
wherein S is the area of illumination, ω is the angular frequency (the value is equal to 2 π/λ), ε0Is a vacuum dielectric constant of ∈rIs a relative dielectric constant, E0For local electric field amplitude, Ω is the total volume of the semiconductor region.
And the grating period Q is 500nm, and the splitting factors a, b, c and d are all valued in the range of 0.5-1 by taking 0.01 as a step length for simulation. Through simulation, the optimal values of all parameters in the grating structure are obtained through optimization: h100 nm, N3, a 1, b 0.69, c 0.85, d 0.8, when: in the upper grating layer, the width of each material strip is w-1＝w-2＝w-3＝0，w+1＝155nm，w+2＝106.95nm，w+3＝73.7955nm，du164.2545 nm; in the lower grating layer, the width of each material strip is t-1＝75nm，t-2＝48.75nm，t-3＝31.6875nm，t+1＝100nm，t+2＝65nm，t+3＝42.25nm，dd＝137.3125nm。
At the moment, the photo-generated current density of the silicon-based thin-film solar cell with the double-layer split grating structure reaches the maximum value of 20.175mA/cm2. And the maximum photogeneration current density of the silicon-based thin-film solar cell with the flat plate structure of the Si absorption layer with the thickness of (400+ H) ═ 500nm (the plane structure of the silicon-based thin-film solar cell is shown in figure 6) is 13.467mA/cm2. Compared with a silicon-based thin-film solar cell with a flat plate structure, the photo-generated current density of the silicon-based thin-film solar cell with the double-layer split grating structure is improvedIt is 49.81% raised. As can be seen from fig. 7, the light absorption efficiency (solid line) of the silicon-based thin-film solar cell with the double-layer split grating structure is superior to that (short-chain line) of the silicon-based thin-film solar cell with the flat plate structure in all bands, and is particularly significant in the near-infrared band (700 to 1100 nm). As can be seen from fig. 8, the absorption enhancement ratio (the ratio of the light absorption efficiency of the silicon-based thin-film solar cell with the double-layer split grating structure to the light absorption efficiency of the silicon-based thin-film solar cell with the flat plate structure) is substantially greater than 1 (the short chain line indicates that the absorption enhancement ratio is 1, i.e., the light absorption efficiencies of the two structures are equal) in the full-band range, and the light absorption efficiency of the silicon-based thin-film solar cell with the structure is substantially better than that of the thin-film solar cell with the flat plate structure in the full-band range. In the near infrared band range, a plurality of sections of high and wide absorption enhancement peaks appear, and the absorption enhancement of the silicon-based thin-film solar cell with the structure is the largest at the wavelength of 964nm and is 19.707 times of that of the silicon-based thin-film solar cell with a flat plate structure. Two points were taken at wavelengths of 820nm and 964nm, and the electric field intensity distribution diagram (fig. 9) and the magnetic field intensity distribution diagram (fig. 10) under TE polarized light and TM polarized light at the two wavelength points were calculated, respectively. As can be seen from fig. 9, many standing waves are formed at either 820nm or 964nm, and therefore, the absorption enhancement of the thin-film solar cell with the double-layer split grating structure in TE polarized light is mainly caused by the optical waveguide mode. As can be seen from fig. 10, the absorption enhancement at a wavelength of 820nm is mainly caused by the optical waveguide mode, and the absorption enhancement at a wavelength of 964nm is caused by both Fabry-Perot Resonances (FPRs) and the optical waveguide mode. The electric field intensity distribution diagram and the magnetic field intensity distribution diagram are integrated to obtain the absorption enhancement mechanism of the silicon-based thin-film solar cell with the double-layer split grating structure, which is mainly caused by the optical waveguide mode.
The structure is also suitable for the form of upper and lower gratings which are conformal, that is, when a is equal to b and c is equal to d, the upper and lower gratings correspond one to one. In addition, the structure can also exchange AZO blocks and Si blocks of the upper grating layer and the lower grating layer or exchange the AZO blocks and the Si blocks with other materials.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.
Claims (4)
1. A silicon-based thin-film solar cell with a double-layer split grating structure is characterized in that: the silicon-based thin-film solar cell comprises an Ag substrate layer, wherein an AZO passivation layer, a lower grating layer, a silicon absorption layer, an upper grating layer and an AZO anti-reflection layer are arranged on the Ag substrate layer in a layer-by-layer manner;
the lower grating layer and the upper grating layer respectively comprise at least one grating period; the grating period is formed by sequentially and alternately arranging Si strips and AZO strips along the width direction of the silicon-based thin-film solar cell.
2. The silicon-based thin-film solar cell of claim 1, wherein: the thickness of the Ag substrate layer is 200nm, the thickness of the AZO passivation layer is 50nm, the thickness of the lower grating layer is 100nm, the thickness of the silicon absorption layer is 400nm, the thickness of the upper grating layer is 100nm, and the thickness of the AZO anti-reflection layer is 60 nm.
3. The silicon-based thin-film solar cell of claim 1, wherein:
in the upper grating layer, the total number of Si strips and AZO strips in one grating period is 2N + 1; of N strips from left to right, each strip has a width of w-n＝Q×(1-a)(a+b-1)n-1N is a positive integer from 1 to N in sequence; from right to left, each strip has a width w+n＝Q×(1-b)(a+b-1)n-1N is a positive integer from 1 to N in sequence; the width of the central strip is du＝Q×(a+b-1)N；
In the lower grating layer, the total number of Si strips and AZO strips in one grating period is 2N + 1; of the N strips from left to right, each strip has a width of t-n＝Q×(1-c)(c+d-1)n-1N is a positive integer from 1 to N(ii) a From right to left, each strip has a width of t+n＝Q×(1-d)(c+d-1)n-1N is a positive integer from 1 to N in sequence; the width of the central strip is dd＝Q×(c+d-1)N；
Wherein: n represents the splitting series of the upper and lower grating layers, and takes a positive integer; q is the width of one grating period; a. b, c and d are splitting factors, and the values are in the range of 0.5-1.
4. The silicon-based thin-film solar cell of claim 1, wherein: q is 500nm, and N is 3.
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