CN112730252A - Wafer detection device - Google Patents
Wafer detection device Download PDFInfo
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- CN112730252A CN112730252A CN202011615404.3A CN202011615404A CN112730252A CN 112730252 A CN112730252 A CN 112730252A CN 202011615404 A CN202011615404 A CN 202011615404A CN 112730252 A CN112730252 A CN 112730252A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B5/00—Measuring arrangements characterised by the use of mechanical techniques
- G01B5/02—Measuring arrangements characterised by the use of mechanical techniques for measuring length, width or thickness
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9505—Wafer internal defects, e.g. microcracks
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Abstract
本申请公开的一种晶圆检测装置，涉及半导体技术领域。该晶圆检测装置包括载物盘、透光板、光源和测量仪，载物盘可转动地设置在透光板上，载物盘用于放置待测晶圆；光源设于透光板远离载物盘的一侧，使得光源发出的光能够透过透光板照射至待测晶圆上，以便检测待测晶圆是否有缺陷；测量仪设于载物盘远离透光板的一侧，用于测量待测晶圆的尺寸。该晶圆检测装置能方便快捷地检测晶圆的外观缺陷和尺寸，检测方便，效率高。
A wafer inspection device disclosed in the present application relates to the technical field of semiconductors. The wafer detection device includes an object tray, a light-transmitting plate, a light source and a measuring instrument. The object-carrying tray is rotatably arranged on the light-transmitting plate, and the object-carrying tray is used to place the wafer to be tested; One side of the object tray, so that the light emitted by the light source can be irradiated on the wafer to be tested through the transparent plate, so as to detect whether the wafer to be tested is defective; the measuring instrument is located on the side of the object tray away from the transparent plate , used to measure the size of the wafer to be tested. The wafer inspection device can conveniently and quickly inspect the appearance defects and dimensions of the wafer, and has the advantages of convenient inspection and high efficiency.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a wafer detection device.
Background
At present, the existing inspection method of silicon carbide wafers is to take silicon carbide wire slices off the machine, place the silicon carbide wire slices on a plug according to the cutting sequence, take out the silicon carbide wire slices by an inspector for appearance inspection, visually inspect the silicon carbide wire slices under incandescent light or take the silicon carbide wire slices by hand to inspect whether defects such as unfilled corners, cracks and other abnormalities exist or not, and select and isolate the silicon carbide wire slices with the defects or the abnormalities.
The inspection mode needs to be performed under an incandescent lamp, great requirements are made on the action specification and the operation method of an operator, if the size of a wafer is slightly larger, the operation difficulty of manual inspection is higher, the problems of falling of the wafer in the inspection, missing detection of defects and the like easily occur, and the operation efficiency is low.
Disclosure of Invention
The invention provides a wafer detection device, which can quickly and conveniently complete the defect detection and the dimension measurement of a wafer, has convenient operation and high detection efficiency, avoids missing detection and has more accurate and reliable detection results.
Embodiments of the invention may be implemented as follows:
in a first aspect, the invention provides a wafer detection device, which comprises a carrying disc, a light-transmitting plate, a light source and a measuring instrument, wherein the carrying disc is rotatably arranged on the light-transmitting plate and is used for placing a wafer to be detected; the light source is arranged on one side of the light-transmitting plate, which is far away from the object carrying disc, so that light emitted by the light source can be irradiated onto the wafer to be detected through the light-transmitting plate, and whether the wafer to be detected has defects or not can be detected; the measuring instrument is arranged on one side, away from the light-transmitting plate, of the object carrying disc and used for measuring the size of the wafer to be measured.
In an optional embodiment, one of the object carrying disc and the light-transmitting plate is provided with a rotating shaft, and the other one of the object carrying disc and the light-transmitting plate is provided with a rotating hole, wherein the rotating shaft is arranged in the rotating hole so as to realize the relative rotation of the object carrying disc and the light-transmitting plate.
In an alternative embodiment, the carrier plate is made of a light-transmitting material.
In an optional embodiment, the carrier tray is provided with an installation identifier for determining a placement position of the wafer to be tested.
In an alternative embodiment, the light-transmitting plate further comprises a first bracket, and the light-transmitting plate is mounted on the first bracket.
In an alternative embodiment, a second bracket is attached to the first bracket, and the meter is mounted on the second bracket.
In an alternative embodiment, the measuring instrument includes a first measuring anvil and a second measuring anvil, the first measuring anvil and the second measuring anvil are movably mounted on the second support, and the first measuring anvil and the second measuring anvil are used for measuring the size of the wafer to be measured.
In an alternative embodiment, at least one of the first anvil and the second anvil is provided with a digital display screen for displaying the measured dimensional values.
In an optional embodiment, the light source includes a lamp tube and an adjusting member, the lamp tube is mounted on the first support and is disposed corresponding to the light-transmitting plate, and the adjusting member is connected to the lamp tube and is configured to adjust the brightness of the lamp tube.
In an alternative embodiment, the gauge employs a vernier caliper.
The beneficial effects of the embodiment of the invention include, for example:
according to the wafer detection device provided by the embodiment of the invention, the carrying disc is rotatably arranged on the light-transmitting plate, so that the wafer can be conveniently rotated to carry out defect detection, and the wafer is prevented from falling. The light source is arranged on one side, away from the object carrying disc, of the light transmission plate, whether the wafer has defects or not can be clearly and accurately judged, the detection period is short, and the operation is convenient. The measuring instrument is arranged above the object carrying disc, so that the size parameters of the wafer can be conveniently and rapidly measured, and the measuring precision and the efficiency are high.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
Fig. 1 is a schematic view of a view angle of a wafer inspection apparatus according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of another view angle of the wafer inspection apparatus according to the embodiment of the present invention;
fig. 3 is a schematic view of an exploded structure of a carrier plate and a transparent plate of the wafer inspection apparatus according to the embodiment of the present invention;
fig. 4 is a schematic structural diagram of an application scenario in which a wafer to be tested is placed on a carrier tray according to an embodiment of the present invention.
Icon: 100-wafer inspection device; 101-a wafer to be tested; 103-large flat edge; 105-small flat edge; 110-a carrier tray; 111-a rotating shaft; 120-a light-transmitting plate; 121-rotation hole; 130-a light source; 131-an adjustment member; 140-a first support; 141-upright post; 150-a measuring instrument; 151-first measuring anvil; 153-second anvil; 160-a second support; 161-a first support bar; 163-a second support bar; 165-fixing bar.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the present invention, it should be noted that if the terms "upper", "lower", "inside", "outside", etc. indicate an orientation or a positional relationship based on that shown in the drawings or that the product of the present invention is used as it is, this is only for convenience of description and simplification of the description, and it does not indicate or imply that the device or the element referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus should not be construed as limiting the present invention.
Furthermore, the appearances of the terms "first," "second," and the like, if any, are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.
It should be noted that the features of the embodiments of the present invention may be combined with each other without conflict.
Silicon carbide is an important third-generation semiconductor material developed after a first-generation semiconductor Si and a second-generation semiconductor GaAs, and has the excellent characteristics of wide forbidden band, high thermal conductivity, high breakdown field strength, high carrier saturation, high radiation resistance, good chemical stability and the like. In recent years, the third generation semiconductor technology rapidly penetrates into all corners of the fields such as illumination, electronic power devices, microwave radio frequency and the like, the market scale is rapidly promoted, and the semiconductor technology has wide application markets in the fields such as new energy automobiles, automobile lighting, general illumination, electric vehicles, 5G communication applications and the like, and becomes one of the directions of new energy development in the future.
The silicon carbide material is used as a substrate material of an epitaxial chip, the quality of a wafer of the silicon carbide material is guaranteed after crystal line cutting and before polishing, impurities such as hexagonal cavities, mixed crystals and carbon inclusions are not allowed to exist, and whether the wafer has hidden cracks or not needs to be detected. Because the silicon carbide substrate can be semitransparent after being cut by a line, the existing inspection means mainly uses a manual handheld flashlight to irradiate the silicon carbide wafer for inspection, and whether the surface of the wafer has impurities or cracks is determined. If the size of the substrate reaches 6 inches or even larger, the manual hand-held flashlight has certain limitation, so that the wafer cannot be clearly irradiated, and meanwhile, the problems of wafer crack missing judgment, impurity missing judgment, easy falling of the wafer in inspection, defect marking, long inspection period, difficult diameter measurement and the like exist.
In order to overcome the defects of the prior art, the embodiment of the invention provides a wafer detection device 100, which can quickly and conveniently perform defect detection and dimension measurement on a wafer, has short detection period, high efficiency and accurate and reliable detection result, and can avoid the problems of missing detection, false detection, easy falling of the wafer during detection, difficult defect marking and the like.
Referring to fig. 1 and fig. 2, the present embodiment provides a wafer inspection apparatus 100, which includes a tray 110, a transparent plate 120, a light source 130 and a measuring instrument 150, wherein the tray 110 is rotatably disposed on the transparent plate 120, and the tray 110 is used for placing a wafer 101 to be inspected; the light source 130 is disposed on a side of the transparent plate 120 away from the tray 110, so that light emitted from the light source 130 can be irradiated onto the wafer 101 to be tested through the transparent plate 120, so as to detect whether the wafer 101 to be tested has defects; the measuring apparatus 150 is disposed on a side of the carrier plate 110 away from the transparent plate 120 for measuring the dimension of the wafer 101 to be measured. The wafer detection device 100 can realize defect detection and size measurement of the wafer, is short in detection period, high in efficiency, accurate and reliable in detection result, capable of avoiding the problems that the wafer is easy to drop or defect marking is difficult and the like in missed detection, false detection and detection, and strong in practicability, and has great popularization and application values.
Referring to fig. 3, alternatively, one of the object tray 110 and the light-transmitting plate 120 is provided with a rotating shaft 111, the other is provided with a rotating hole 121, and the rotating shaft 111 is disposed in the rotating hole 121 to realize the relative rotation of the object tray 110 and the light-transmitting plate 120. In this embodiment, the transparent plate 120 is provided with a rotating hole 121, a rotating shaft 111 is convexly disposed on one side of the object carrying tray 110 close to the transparent plate 120, and the rotating shaft 111 is inserted into the rotating hole 121, so that the object carrying tray 110 can rotate relative to the transparent plate 120. The wafer 101 to be detected is a wafer, the wafer is placed on the object carrying disc 110, the object carrying disc 110 rotates to drive the wafer to rotate together, inspection personnel can conveniently observe the wafer at all visual angles, and whether the wafer has defects such as holes, impurities, cracks, unfilled corners and carbon wrapping or not is observed from all the visual angles. Because the wafer is arranged on the objective table, the placement is reliable, and the condition that the wafer falls off in the detection process can not occur. If the wafer 101 to be detected has different dimensions, the object carrying disc 110 can be replaced to adapt to the detection of wafers with different dimensions, and the application scene is flexible and the application range is wide.
The object carrying disc 110 can conveniently rotate, when some defects are found, the defects can be conveniently marked, in the prior art, an inspector holds a flashlight with one hand and holds a wafer with the other hand, the two hands are occupied, the defect marks are marked with great operation difficulty and can be seen clearly sometimes by looking up, the operation difficulty is great, the wafer 101 to be detected can easily fall off in the inspection process, and the large-size wafer 101 to be detected is not suitable for detection operation. And the wafer detection device 100 that provides in this embodiment can not need to occupy the inspector's hand, can liberate both hands, and the inspector can detect the wafer 101 that awaits measuring with concentrating on more, and it is more convenient to operate, can avoid lou examining, erroneous judgement scheduling problem, and detection efficiency is higher, and the testing result is more accurate reliable.
Optionally, the carrier plate 110 is made of a light-transmitting material, and the carrier plate 110 includes, but is not limited to, glass or other light-transmitting materials, such as acrylic or organic glass, and the like, and is not limited herein. Further, the carrier tray 110 in this embodiment is provided with an installation identifier for determining a placement position of the wafer 101 to be tested. Optionally, the mounting identifier may be a center point or an edge profile of the wafer 101 to be tested, in this embodiment, referring to fig. 4, the mounting identifier is a profile of the large flat side 103 and a profile of the small flat side 105 of the wafer 101 to be tested, that is, the profiles of the large flat side 103 and the small flat side 105 are respectively marked on the carrier plate 110, when the wafer 101 to be tested is placed, the large flat side 103 of the wafer 101 to be tested is aligned with the profile identifier of the large flat side 103 on the carrier plate 110, and the small flat side 105 of the wafer 101 to be tested is aligned with the profile identifier of the small flat side 105 on the carrier plate 110. Therefore, all the wafers 101 to be tested have uniform placement standards, the detection visual angles are consistent, the measurement standards are consistent, the detection standards are uniform, the detection standards are better in uniformity for the detection of a large batch of wafers 101 to be tested, and the difference of detection results caused by the difference of operation methods, the detection proficiency, the experience abundance and the like of inspectors is avoided.
Optionally, the wafer inspecting apparatus 100 further includes a first frame 140, and the transparent plate 120 is mounted on the first frame 140. The first support 140 includes two opposing posts 141, one end of the light-transmitting plate 120 is connected to one of the posts 141 and the other end is connected to the other post 141. The light-transmitting plate 120 is made of a light-transmitting material, and the light-transmitting plate 120 includes, but is not limited to, glass or other light-transmitting materials, such as acrylic plate or organic glass, and the like, which is not limited herein.
Further, a second bracket 160 is coupled to the first bracket 140, and the measuring instrument 150 is mounted on the second bracket 160. The second bracket 160 includes a fixing rod 165, and a first supporting rod 161 and a second supporting rod 163 disposed opposite to each other, one end of the fixing rod 165 is connected to the first supporting rod 161, the other end is connected to the second supporting rod 163, the fixing rod 165 is located on a side of the tray 110 away from the transparent plate 120, and the measuring instrument 150 is mounted on the fixing rod 165. Optionally, the measuring instrument 150 includes a first anvil 151 and a second anvil 153, the first anvil 151 and the second anvil 153 are movably mounted on the fixing rod 165 of the second bracket 160, and the first anvil 151 and the second anvil 153 are used for measuring the size of the wafer 101 to be measured. In this embodiment, at least one of the first anvil 151 and the second anvil 153 is provided with a digital display screen for displaying the measured dimension value, so as to facilitate the reading operation of the user. It is easy to understand that the first anvil 151 may be provided with a digital display screen, the second anvil 153 may be provided with a digital display screen, or both the first anvil 151 and the second anvil 153 may be provided with a digital display screen, which is not limited herein. In this embodiment, the second anvil 153 is provided with a digital display screen, and the measuring instrument 150 is a vernier caliper, but the invention is not limited thereto, and the measuring instrument 150 may also be other instruments, such as a laser distance measuring instrument, and the like, and is not limited herein.
Optionally, a first mounting hole is formed in the first measuring anvil 151, the first measuring anvil 151 is sleeved on the fixing rod 165 through the first mounting hole, a second mounting hole is formed in the second measuring anvil 153, the second measuring anvil 153 is sleeved on the fixing rod 165 through the second mounting hole, and the first measuring anvil 151 and the second measuring anvil 153 can respectively move along the axial direction of the fixing rod 165 so as to measure the size of the wafer 101 to be measured on the object carrying tray 110. It is understood that the dimensional measurements include, but are not limited to, the diameter size of the wafer, the large flat side 103 size, and the small flat side 105 size.
The first anvil 151 and the second anvil 153 of the vernier caliper lightly clamp the outer edges of the wafer except the large flat edge 103 and the small flat edge 105, so that the whole wafer is horizontally placed as much as possible. Measuring the length of the diameter line at least 3 different positions, observing the measured value on the digital display screen, and recording the measured minimum value as the diameter of the wafer.
The first anvil 151 and the second anvil 153 of the vernier caliper are gently clamped at two ends of the large flat edge 103, the line of the large flat edge 103 is attached to the inner measuring claw of the vernier caliper, the whole wafer is placed horizontally as much as possible, the measured value on the digital display screen is observed, and the length value of the line of the large flat edge 103 is obtained through recording and measuring.
Similarly, the first anvil 151 and the second anvil 153 of the vernier caliper are lightly clamped at two ends of the small flat edge 105, the line of the small flat edge 105 is attached to the inner measuring claw of the vernier caliper, the whole wafer is horizontally placed as much as possible, the measured value on the digital display screen is observed, and the length value of the small flat edge 105 is obtained through recording and measuring.
Optionally, the light source 130 includes a lamp and an adjusting member 131, the lamp is mounted on the first bracket 140, and is disposed corresponding to the transparent plate 120 and located on a side of the transparent plate 120 away from the object tray 110, so that light emitted by the lamp can pass through the transparent plate 120 and irradiate onto the wafer 101 to be tested on the object tray 110, thereby facilitating an inspector to test the wafer 101 to be tested. The adjusting member 131 is connected to the lamp for adjusting the brightness of the lamp, and under different ambient light intensities or for different types of wafers 101 to be tested, better testing conditions can be created by adjusting the luminous intensity of the lamp, so as to improve the testing efficiency and quality. The adjustment member 131 includes, but is not limited to, a button or knob, etc. Of course, the light tube may be replaced by a flashlight, a light bulb or other light emitting elements, and is not limited herein. The positions of the lamps may be set below the wafer 101 to be tested, or may be set above or around the wafer 101 to be tested, and the number of the lamps may also be one or more.
The wafer inspection apparatus 100 according to the present embodiment includes the following steps:
depending on the type of wafer 101 being tested, the approximate wafer placement location may be marked on the surface of the carrier plate 110, for example, the location profile of the large flat edge 103 and the small flat edge 105 may be marked. The wafer to be measured is placed on the object carrying disc 110, and the large flat edge 103 and the small flat edge 105 of the wafer are respectively placed on the calibrated position outline. The light source 130 is turned on, the carrier plate 110 is rotated, and the wafer 101 to be measured is measured. The diameter of the wafer 101 to be measured, the size of the large flat edge 103, the size of the small flat edge 105 and the like are measured by the first anvil 151 and the second anvil 153, and the measured values are recorded through a digital display screen on the first anvil 151. Optionally, the right measuring point on the wafer 101 to be measured is aligned with the first anvil 151, the left measuring point on the wafer 101 to be measured is aligned with the second anvil 153, and the corresponding required length, such as the diameter size, of the wafer 101 to be measured is measured. According to the position profile of the large and small flat edges 105 marked on the surface of the stage, a vernier caliper is used to measure the dimensions of the large flat edge 103 and the small flat edge 105 of the wafer 101 to be measured.
According to the product types of different wafers 101 to be measured, the adjusting part 131 connected with the lamp tube is rotated to adjust the illumination intensity to the illumination intensity suitable for observation. The light emitted from the light source 130 passes through the object tray 110 and the transparent plate 120, so as to clearly irradiate the surface of the wafer 101 to be tested, and the inspector can visually observe the surface quality of the wafer 101 to be tested to determine whether defects or abnormal points exist, including but not limited to defects such as corner defects, cracks, polytype, thick thin sheets, carbon wrapping, hexagonal cavities and other abnormalities. If the wafer 101 to be tested has defects or abnormal points, a marker is used for marking the surface of the wafer 101 to be tested. It should be noted that, when a wafer 101 to be tested with a larger size needs to be tested, only the tray 110 needs to be replaced with a tray 110 with a corresponding size, so that the wafer testing device is very flexible to use, and is suitable for testing wafers with sizes of 4 inches, 6 inches, 8 inches and even larger.
By adopting the wafer inspection apparatus 100 provided in the present embodiment, from the actual production, compared with the prior art, the wafer inspection apparatus can bring a very positive benefit to the actual production. Taking a production test of 1000 silicon carbide wire cutting tables as an example:
as can be seen from the above table, in the prior art, manual inspection, manual wafer holding and manual inspection are adopted, and some missed inspection conditions exist more or less. The wafer inspection apparatus 100 of the present embodiment greatly reduces the missing inspection rate of the wafer 101 to be inspected during the visual inspection, and simultaneously avoids the risk of chipping. The inspection efficiency is high, and besides obvious improvement on production indexes, the inspection device also has the advantages of reducing the operation intensity of the inspector and freeing hands on the operation of the inspector; the error of the measuring position is reduced, and the operation of the inspection personnel is standardized. In summary, the wafer inspection apparatus 100 provided in the present embodiment optimizes the inspection accuracy and has this positive promoting effect on the production inspection management.
In summary, the embodiment of the invention provides a wafer inspection apparatus 100, which has the following advantages:
the wafer detection device 100 is simple in structure and low in manufacturing cost, can reduce the operation intensity of inspectors, liberates two hands, standardizes the operation of the inspectors, reduces errors of measurement positions, and improves the detection efficiency and the accuracy. The method can not only finish the size detection of the wafer 101 to be detected, but also finish the surface quality detection of the wafer 101 to be detected, namely the detection of various defects such as unfilled corners, cracks, polytype, thick sheets, carbon wrapping, hexagonal cavities and the like and other abnormal detections, and prevent the phenomena of missed detection, falling of the wafer 101 to be detected in the detection process and the like.
The above description is only for the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (10)
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| CN114935574A (en) * | 2022-05-17 | 2022-08-23 | 河北同光半导体股份有限公司 | Method and device for detecting high-purity silicon carbide crystal package |
| CN115527881A (en) * | 2022-09-28 | 2022-12-27 | 华东光电集成器件研究所 | A wafer-level bonding quality detection device |
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