CN112467321B - Dual-mode SIW (substrate integrated waveguide) adjustable filter based on reconfigurable electromagnetic boundary - Google Patents

Dual-mode SIW (substrate integrated waveguide) adjustable filter based on reconfigurable electromagnetic boundary Download PDF

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CN112467321B
CN112467321B CN202011163927.9A CN202011163927A CN112467321B CN 112467321 B CN112467321 B CN 112467321B CN 202011163927 A CN202011163927 A CN 202011163927A CN 112467321 B CN112467321 B CN 112467321B
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周东方
王显
张德伟
王月
吕大龙
张毅
刘庆
邓海林
付宇璠
唐敏
张俊杰
卞晨阁
杨红
潘晨清
马壮
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Information Engineering University of PLA Strategic Support Force
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    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
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    • H01P1/20Frequency-selective devices, e.g. filters
    • H01P1/212Frequency-selective devices, e.g. filters suppressing or attenuating harmonic frequencies

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Abstract

The invention belongs to the technical field of microwave communication equipment, and particularly relates to a dual-mode SIW (substrate integrated waveguide) tunable filter based on a reconfigurable electromagnetic boundary, which comprises a square substrate integrated waveguide dual-mode resonatorThe PIN diode comprises a plurality of PIN diodes and an input/output feeder; adding perturbation gaps at the axisymmetric positions of the square substrate integrated waveguide dual-mode resonator, and utilizing a main mode TE101Mode and first higher order mode TE102Mode forming a filter passband; PIN diodes are loaded around the square substrate integrated waveguide dual-mode resonator to control free switching of an electric boundary and a magnetic boundary; and the input and output feeder is connected with the square substrate integrated waveguide dual-mode resonator. The invention provides the idea of realizing the reconstruction of the electromagnetic boundary by utilizing the on-off of the PIN diode, realizes the adjustability of the center frequency and the constancy of the absolute bandwidth, has good selectivity and out-of-band rejection level in the whole center frequency adjusting range, and has simple structure and flexible and convenient adjustment of the whole filter circuit.

Description

Dual-mode SIW (substrate integrated waveguide) adjustable filter based on reconfigurable electromagnetic boundary
Technical Field
The invention belongs to the technical field of microwave communication equipment, and particularly relates to a dual-mode SIW (substrate integrated waveguide) tunable filter based on a reconfigurable electromagnetic boundary.
Background
The rf front-end circuit has a wide and deep application in radio systems such as wireless communication, satellite communication, short-wave communication, radar, and electronic countermeasure. With the rapid development of global radio systems, the rf circuits are being driven toward miniaturization, integration, and low cost. To meet this trend, systems and devices for multiband and multimode have been rapidly developed. In multi-frequency and multi-mode systems and devices, filters of many different operating frequency bands and modes are required to realize signal selection, and mutual interference exists between different signal channels. A single non-tunable filter has not been able to meet the needs of such systems and devices. The traditional solution is to load a set of filter banks in the control circuit of the radio frequency front end and select the required frequency band by using the operation mode of switching on and off the switch. However, the huge filter bank causes the radio frequency front-end circuit to be very complicated, the size and the loss of the system are increased, meanwhile, the working mode of the filter is controlled by utilizing the on-off of the common switch, the switching speed is slow, and the working efficiency of the system is not improved favorably. The development of electrically tunable filters has made this difficult problem easy to solve. An electrically tunable filter can satisfy the normal operation of a plurality of frequencies and modes of a system, and has the following advantages: firstly, selection of a target signal and suppression of an interference signal are realized; secondly, the volume is effectively reduced, the cost is reduced, and the radio system is a core device for realizing miniaturization, multiple functions, low cost and iterative upgrade of various radio systems; thirdly, the frequency agility function of the radio system can be realized, and the efficiency of the radio system is effectively improved.
The electrically tunable filter based on the microstrip structure has many advantages, such as low design cost, simple manufacture, easy loading of electrically tunable elements, etc., but sometimes it cannot meet the system and equipment with higher requirements for power capacity. The cavity filter with high power capacity is mechanically adjustable by loading tuning screws or driving tuning pieces by a motor, and is difficult to realize electric adjustment, so that the requirement of a modern wireless system on tuning speed cannot be met. The SIW structure, since its inception in the twenty-first century, has developed rapidly for two reasons: firstly, the SIW has the advantages of the conventional waveguide, including higher Q value, lower radiation loss, and smaller size compared to the metal waveguide; second, the SIW also has the advantages of lower cost, simple fabrication, and easier integration with planar circuits. Therefore, the SIW technology has been widely applied to many rf microwave devices.
At present, because a multimode SIW resonator is difficult to realize adjustability, most researches on SIW electrically tunable filters are focused on single-mode SIW resonators. Multimode SIWs have significant advantages in terms of miniaturization and selectivity. For example, High-Selectivity Tunable Filters With Dual-Mode SIW detectors in an L-Shaped Coupling Scheme, published by IEEE Transactions on Microwave Theory and Techniques, vol.67.2019, by M.Abdelfattah et al, utilizes linear actuators to move the tuning wafer to implement a Dual-Mode SIW Tunable filter. However, the tunable filter is bulky and is not flexible enough to be tuned.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a dual-mode SIW (substrate integrated waveguide) tunable filter based on a reconfigurable electromagnetic boundary, and provides the idea of realizing the reconfigurability of the electromagnetic boundary by utilizing the on-off of a PIN (personal identification number) diode, so that the center frequency is tunable, the absolute bandwidth is kept constant, the good selectivity and the out-of-band rejection level are realized in the whole center frequency adjusting range, and the whole filter circuit is simple in structure and flexible and convenient to adjust.
In order to solve the technical problems, the invention adopts the following technical scheme:
the invention relates to a dual-mode SIW (substrate integrated waveguide) tunable filter based on a reconfigurable electromagnetic boundary, which comprises a square substrate integrated waveguide dual-mode resonator and a plurality of square substrate integrated waveguide dual-mode resonatorsEach PIN diode and input and output feeder; adding perturbation gaps at the axisymmetric positions of the square substrate integrated waveguide dual-mode resonator, and utilizing a main mode TE101Mode and first higher order mode TE102Mode forming a filter passband; arranging a plurality of metal through holes at the peripheral edge of the square substrate integrated waveguide dual-mode resonator, arranging a groove on the metal layer close to the inner side of the metal through holes, and enabling a PIN diode to be connected to the groove in a crossing mode, wherein the PIN diode controls free switching of an electric boundary and a magnetic boundary; the input and output feeder is connected with the square substrate integrated waveguide dual-mode resonator;
the free switching of the PIN diode control electrical and magnetic boundaries comprises:
the position where the PIN diode is conducted is equivalent to an electric boundary; conversely, a location where the PIN diode is reverse biased is equivalent to a magnetic boundary.
Further, the perturbation gap adjusts the first higher order mode TE102TE mold, counter master mold101The mode has no influence, and as the length of the perturbation gap is increased, the first higher order mode TE102Mode-oriented master mode TE101The mode shifts and vice versa in the opposite direction, thereby controlling the filter bandwidth.
Further, the filter further comprises a PIN diode external bias circuit used for protecting the PIN diode to normally work, and the PIN diode external bias circuit comprises a blocking capacitor DC Block and a bias resistor RF Block.
Furthermore, reconstruction of an electromagnetic boundary is realized by loading a PIN diode, and when the electromagnetic boundary of the square substrate integrated waveguide dual-mode resonator is reconstructed, the TE of the main mode is reconstructed101Mode and first higher order mode TE102The mode is shifted, and the center frequency of the filter can be adjusted.
Further, the PIN diodes are symmetrically loaded on the periphery of the square substrate integrated waveguide dual-mode resonator, the PIN diodes are symmetrically switched at the same time, and the TE of the master mode is realized101Mode and first higher order mode TE102The modes are simultaneously approximately equally varied, and the absolute bandwidth remains approximately constant throughout the center frequency adjustment process.
Furthermore, the input and output feeder is introduced to couple with a load, the square substrate integrated waveguide dual-mode resonator is introduced to couple with a bypass, and two transmission zeros are introduced to two sides of a passband respectively.
Further, the filter adopts an RF-35 substrate with a relative dielectric constant of 3.5, and the thickness of the substrate is 0.508 mm; the type of the PIN diode is SMP1345-079 LF.
Compared with the prior art, the invention has the following advantages:
1. the invention innovatively provides the idea of the reconfigurable electromagnetic boundary based on the dual-mode SIW tunable filter with the reconfigurable electromagnetic boundary, PIN diodes are loaded on the periphery of the square substrate integrated waveguide dual-mode resonator, the free switching of the electrical boundary and the magnetic boundary is realized through the on-off of the PIN diodes, the reconfiguration of the square substrate integrated waveguide dual-mode resonator is further realized, the problem that the square dual-mode SIW resonator is difficult to realize electric tuning is solved, and a new idea is provided for the realization of the electric tuning of the multi-mode SIW filter.
2. The double-mode SIW adjustable filter based on the reconfigurable electromagnetic boundary realizes the reconfiguration of the electromagnetic boundary by loading the PIN diode, and when the electromagnetic boundary of the square substrate integrated waveguide double-mode resonator is reconfigured, the TE of the main mode is adopted101Mode and first higher order mode TE102The mode is shifted, so that the center frequency of the filter can be adjusted, and the absolute bandwidth is kept constant without loading any other tuning element. The invention has good selectivity and out-of-band rejection level, and the whole filter has simple structure and flexible and convenient adjustment.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a square substrate integrated waveguide dual-mode resonator loaded with a PIN diode according to an embodiment of the invention;
FIG. 2 is a schematic structural diagram of a dual-mode SIW tunable filter (a) based on reconfigurable electromagnetic boundaries and a PIN diode external bias circuit (b) according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of an electric field distribution (a) and a current distribution (b) of a square substrate integrated waveguide dual-mode resonator under 3 electrical-boundary conditions (EC) and 1 magnetic-boundary condition (MC) according to an embodiment of the present invention;
FIG. 4 shows the resonant frequency as a function of perturbation gap length L under different electrical boundary conditions in accordance with an embodiment of the present invention6The variation curve of (d);
FIG. 5 shows TE as a middle-primary mode of a square substrate integrated waveguide dual-mode resonator according to an embodiment of the present invention101Mode and first higher order mode TE102The electric field distribution of the mode is along with the change curve of the electric boundary length;
FIG. 6 shows TE as a middle-primary mode of a square substrate integrated waveguide dual-mode resonator according to an embodiment of the present invention101Mode and first higher order mode TE102A curve of the resonant frequency of the mode as a function of the electrical boundary length;
FIG. 7 is a simulation and test result plot of a dual-mode SIW tunable filter based on reconfigurable electromagnetic boundaries, where S is11Shows return loss (b), S21The insertion loss (a) is shown.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer and more complete, the technical solutions in the embodiments of the present invention will be described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention, and based on the embodiments of the present invention, all other embodiments obtained by a person of ordinary skill in the art without creative efforts belong to the scope of the present invention.
As shown in fig. 2, the dual-mode SIW tunable filter based on the reconfigurable electromagnetic boundary of this embodiment includes a square substrate integrated waveguide dual-mode resonator, a plurality of PIN diodes and input/output feed lines, where the square substrate integrated waveguide dual-mode resonator is integrated with a plurality of PIN diodes and a plurality of input/output feed linesAdding perturbation gaps at the axisymmetric positions, and using the TE of the master mode101Mode and first higher order mode TE102Mode forming a filter passband; arranging a plurality of metal through holes at the peripheral edge of the square substrate integrated waveguide dual-mode resonator, arranging a groove on the metal layer close to the inner side of the metal through holes, and enabling a PIN diode to be connected to the groove in a bridging mode, wherein the PIN diode controls free switching of an electric boundary and a magnetic boundary, so that reconstruction of the square dual-mode SIW resonator is realized; and the input and output feeder is connected with the square substrate integrated waveguide dual-mode resonator.
Preferably, the filter uses a Taconic RF-35 substrate with a relative dielectric constant of 3.5, and the thickness of the substrate is 0.508 mm; the PIN diode is implemented with Skyworks SMP1345-079 LF.
The electromagnetic boundary reconstruction is realized by loading a PIN diode, and specifically, the position where the PIN diode is conducted is equivalent to an electrical boundary; conversely, a location where the PIN diode is reverse biased is equivalent to a magnetic boundary. Taking fig. 1 as an example for explanation, fig. 1 is a schematic structural diagram of a square substrate integrated waveguide dual-mode resonator loaded with PIN diodes, where a to J represent 10 PIN diodes, and when the PIN diodes are all turned on, the square substrate integrated waveguide dual-mode resonator can be approximately equivalent to a square dual-mode SIW resonator with 4 ECs; when A, B, C is disconnected and the rest PIN diodes are conducted, the square dual-mode SIW resonator is approximately equivalent to 3 EC and 1 MC; when A, B, C is turned on and the rest PIN diodes are all turned off, the square dual-mode SIW resonator is approximately equivalent to 1 EC and 3 MC; when all PIN diodes are disconnected, the square dual-mode SIW resonator is approximately equivalent to 4 MCs; thus, the adjustment of the boundary conditions of 4 EC-0 EC (0 MC-4 MC) is achieved, which is actually a reconstruction process of the square dual-mode SIW resonator.
Fig. 2(a) is a schematic structural diagram of a dual-mode SIW tunable filter based on reconfigurable electromagnetic boundaries, in which dimensional parameters of various parts are shown in the following table.
Figure GDA0003253424470000061
Fig. 2(b) is a schematic structural diagram of a PIN diode external bias circuit, which needs to be designed to protect the PIN diode from normal operation when the PIN diode is loaded, the PIN diode external bias circuit includes a DC blocking capacitor DC Block and a bias resistor RF Block, the DC blocking capacitor DC Block is loaded to prevent direct current from being directly grounded and prevent direct current from flowing into a feed source of the filter, and the bias resistor RF Block is loaded to prevent direct alternating current from flowing into a direct current source and causing damage.
FIG. 3 is a schematic diagram of the electric field distribution (a) and the current distribution (b) of the first three modes under 3 electrical boundary conditions and 1 magnetic boundary condition of a square dual-mode SIW resonator, using a master mode TE101Mode and first higher order mode TE102The modes form the filter passband and since the two modes are not a degenerate orthogonal pair, they can be referred to as non-degenerate dual-mode resonators. When using the master mode TE101Mode and first higher order mode TE102When the modes form a passband, the transmission zero point can be introduced by the bypass coupling of the two. In addition, according to the current distribution of the two modes, a perturbation gap is added at the axisymmetric position of the square dual-mode SIW resonator, and the TE of the main mode is subjected to101Mode has no influence on the first higher order mode TE102The mode influence, the perturbation gap can independently adjust the first higher order mode TE102Mode, thereby controlling filter bandwidth with perturbation gap length L6Enlarged, master mode TE101The mode frequency remains constant while the first higher order mode TE102The mode frequency decreases and this characteristic is shown in figure 4. FIG. 5 illustrates the master mode TE as EC gradually increases101Mode and first higher order mode TE102And (3) visually seeing the reconstruction process of the square dual-mode SIW resonator according to the electric field distribution condition of the modes and the angle of the electric field.
The reconstruction of the electromagnetic boundary is realized by loading a PIN diode, and when the electromagnetic boundary of the square dual-mode SIW resonator is reconstructed, the TE of the main mode101Mode and first higher order mode TE102The mode is shifted, so that the center frequency of the filter can be adjusted. In addition, the PIN diodes are symmetrically loaded around the square substrate integrated waveguide dual-mode resonator and are also symmetrically switched at the same time, so that the TE of the master mode is realized101Mode and first higher order mode TE102The modes vary approximately equally at the same time, throughoutDuring the adjustment of the heart frequency, the absolute bandwidth remains approximately constant. Fig. 6 illustrates that when EC is gradually increased, the resonant frequencies of the two modes are simultaneously increased, and the frequency increment is approximately the same, so that the filter has a very important characteristic that the absolute bandwidth can be kept approximately constant in the whole process of adjusting the frequency without adding any additional tuning element.
When the filter works, the coupling of a source and a load and the coupling of a main mode/a higher-order mode bypass are simultaneously realized, and two transmission zeros are respectively introduced to two sides of a passband. Fig. 7 is a graph of simulation and test results for a dual-mode SIW tunable filter based on reconfigurable electromagnetic boundaries that achieves a total of four transmission zeroes, with the lower stop band having two transmission zeroes from source-to-load coupling and the upper stop band having two transmission zeroes from main mode/higher order mode bypass coupling. Some of the test data are shown in the table below.
Figure GDA0003253424470000081
In the status column of the PIN diode in the table, "0" indicates that the PIN diode is off, i.e., the boundary condition is MC, and "1" indicates that the PIN diode is on, i.e., the boundary condition is EC. Frequency of test (f)0) The adjusting range is 2.13-3.55 GHz, the bandwidth (ABW) is 347 +/-7 MHz, and the adjusting range is approximately kept unchanged; in the adjustable process, the insertion loss is 1.2-4.4 dB.
The reconfigurable electromagnetic boundary-based dual-mode SIW tunable filter creatively provides the idea of reconfigurable electromagnetic boundary, starts from the boundary condition of the resonator, and realizes the switching of the electromagnetic boundary through the on-off of the PIN diode, thereby realizing the reconfiguration of the square dual-mode SIW resonator, solving the problem that the square dual-mode SIW resonator is difficult to realize the electric regulation, and providing an important idea for the realization of the electric regulation of the multi-mode SIW filter by the idea of electromagnetic boundary reconfiguration. The filter realizes adjustable center frequency and ensures constant absolute bandwidth. The filter has good selectivity and out-of-band rejection level, and the whole filter has simple structure and flexible and convenient adjustment.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Finally, it is to be noted that: the above description is only a preferred embodiment of the present invention, and is only used to illustrate the technical solutions of the present invention, and not to limit the protection scope of the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention shall fall within the protection scope of the present invention.

Claims (7)

1. A dual-mode SIW tunable filter based on a reconfigurable electromagnetic boundary is characterized by comprising a square substrate integrated waveguide dual-mode resonator, a plurality of PIN diodes and an input/output feeder line; adding perturbation gaps at the axisymmetric positions of the square substrate integrated waveguide dual-mode resonator, and utilizing a main mode TE101Mode and first higher order mode TE102Mode forming a filter passband; arranging a plurality of metal through holes at the peripheral edge of the square substrate integrated waveguide dual-mode resonator, arranging a groove on the metal layer close to the inner side of the metal through holes, and enabling a PIN diode to be connected to the groove in a crossing mode, wherein the PIN diode controls free switching of an electric boundary and a magnetic boundary; the input and output feeder is connected with the square substrate integrated waveguide dual-mode resonator;
the free switching of the PIN diode control electrical and magnetic boundaries comprises:
the position where the PIN diode is conducted is equivalent to an electric boundary; conversely, a location where the PIN diode is reverse biased is equivalent to a magnetic boundary.
2. The reconfigurable electromagnetic boundary-based dual-mode SIW tunable filter of claim 1, wherein the perturbation gap adjusts the first higher order mode TE102TE mold, counter master mold101The mode has no influence, and as the length of the perturbation gap is increased,first higher order mode TE102Mode-oriented master mode TE101The mode shifts and vice versa in the opposite direction, thereby controlling the filter bandwidth.
3. The reconfigurable electromagnetic boundary-based dual-mode SIW tunable filter according to claim 1, further comprising a PIN diode external bias circuit for protecting the PIN diode from normal operation, wherein the PIN diode external bias circuit comprises a DC blocking capacitor DC Block and a bias resistor RF Block.
4. The reconfigurable electromagnetic boundary-based dual-mode SIW tunable filter according to claim 1, wherein the reconfiguration of the electromagnetic boundary is realized by loading a PIN diode, and when the electromagnetic boundary of the square substrate integrated waveguide dual-mode resonator is reconfigured, the TE fundamental mode is adopted101Mode and first higher order mode TE102The mode is shifted, and the center frequency of the filter can be adjusted.
5. The reconfigurable electromagnetic boundary-based dual-mode SIW tunable filter according to claim 4, wherein the PIN diodes are symmetrically loaded around the square substrate integrated waveguide dual-mode resonator, and are simultaneously symmetrically switched to form a main mode TE101Mode and first higher order mode TE102The modes are simultaneously approximately equally varied, and the absolute bandwidth remains approximately constant throughout the center frequency adjustment process.
6. The reconfigurable electromagnetic boundary-based dual-mode SIW tunable filter according to claim 1, wherein said input/output feed line introduces a source coupled to a load, said square substrate integrated waveguide dual-mode resonator introduces a bypass coupling, and two transmission zeros are introduced on both sides of the passband.
7. The reconfigurable electromagnetic boundary-based dual-mode SIW tunable filter of claim 1, wherein the filter employs an RF-35 substrate with a relative dielectric constant of 3.5 and a thickness of 0.508 mm; the type of the PIN diode is SMP1345-079 LF.
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CN103730708A (en) * 2013-12-23 2014-04-16 西安理工大学 Micro-strip gap double-frequency adjustable filter
CN111600101A (en) * 2020-05-09 2020-08-28 中国人民武装警察部队工程大学 Broadband filter with adjustable notch

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103730708A (en) * 2013-12-23 2014-04-16 西安理工大学 Micro-strip gap double-frequency adjustable filter
CN111600101A (en) * 2020-05-09 2020-08-28 中国人民武装警察部队工程大学 Broadband filter with adjustable notch

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