CN112378625A - Device and method for testing electronic image resolution in electron bombardment CMOS research - Google Patents

Device and method for testing electronic image resolution in electron bombardment CMOS research Download PDF

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CN112378625A
CN112378625A CN202011254741.4A CN202011254741A CN112378625A CN 112378625 A CN112378625 A CN 112378625A CN 202011254741 A CN202011254741 A CN 202011254741A CN 112378625 A CN112378625 A CN 112378625A
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reflector
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ultraviolet light
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CN112378625B (en
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张昆林
邓华兵
杨文波
谭何盛
靳英坤
冯云祥
刀丽纯
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North Night Vision Technology Co Ltd
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    • G—PHYSICS
    • G01—MEASURING; TESTING
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Abstract

The invention discloses a device and a method for testing electronic image resolution in electron bombardment CMOS research. Ultraviolet parallel light emitted by a light source is reflected and converged by the first reflecting mirror and the second reflecting mirror, the brightness is enhanced, a specific oblique incident angle is formed, the ultraviolet parallel light irradiates on the surface of the Au cathode, the irradiation range is the effective area of the whole Au cathode, photoelectrons generated by the ultraviolet light are absorbed by the Au cathode, the target surface of the CMOS is bombarded under the driving of accelerating high pressure outside the cavity, an enhanced electronic image is generated, the optical image and the electronic image generated by the ultraviolet light which is not absorbed by the Au cathode and is transmitted to the target surface of the CMOS are completely separated, and the resolution index of the electron bombarded CMOS can be obtained by interpreting the resolution pattern.

Description

Device and method for testing electronic image resolution in electron bombardment CMOS research
Technical Field
The invention relates to a device and a method for testing electronic image resolution in electron bombardment CMOS research, which are mainly used for solving the problems that the electronic image and an optical image are mutually overlapped and interfered in the electron bombardment CMOS research, so that the electron bombardment CMOS electronic image resolution index is reduced or cannot be interpreted, and the development requirement is difficult to achieve.
Background
The electron bombardment CMOS as a novel night vision imaging device has the advantages of all weather, small volume, light weight, large dynamic range and the like, and is widely applied to the fields of night vision helmet observation mirrors, helicopter observation and sighting night vision systems, single photon detection research and the like abroad.
The electron bombardment CMOS adopts a back-illuminated CMOS imaging device to replace a fluorescent screen in an image intensifier, obtains high energy bombardment CMOS from an external high-voltage power supply by means of photoelectrons generated by a photocathode under an ultrahigh vacuum state, and obtains a high-resolution target image almost without noise.
At present, the research on electron bombardment CMOS, particularly the research results of critical performances such as resolution and the like, are reported less, and because of the high resolution characteristic of electron bombardment CMOS, the electron image resolution generated by photoelectron bombardment CMOS is one of the core parameters for representing the high and low performances of electron bombardment CMOS and is also an important content in the research on electron bombardment CMOS, and the method for constructing the electron bombardment CMOS resolution test device is generally adopted for testing and analyzing in the research.
The working principle of the device for testing the electron bombardment CMOS resolution is as follows: under the vacuum state, parallel ultraviolet light vertically irradiates an Au cathode plated with a resolution pattern, is excited by the ultraviolet light absorbed by the Au cathode to generate photoelectrons, bombards a back-illuminated CMOS target surface under the action of accelerating high pressure to generate a resolution pattern image corresponding to the Au cathode resolution pattern, and the image is actually formed by overlapping two parts of images, wherein one part of the image is an electronic image generated by bombarding the CMOS by the photoelectrons; the other part is an optical image generated by transmitting ultraviolet light which is not absorbed by an Au cathode to a CMOS target surface from an Au cathode fused quartz glass substrate, and if the image is directly interpreted by resolution group numbers, the image is affected by image overlapping interference, the brightness of the image is low, the definition is poor, an accurate numerical value of the CMOS electronic image resolution is difficult to obtain, and even if the image can be interpreted reluctantly, the design requirements cannot be met, so that the electronic image generated by the CMOS and the optical image are completely separated and do not interfere with each other, the resolution of the electronic image generated by the CMOS can be accurately tested, and the development level of the electron bombardment CMOS is truly reflected.
The existing methods for separating electron bombardment CMOS electronic images and optical images are of two types, the first type is a shielding separation acquisition method, and the specific scheme is shown in figure 1. Firstly, changing the incident angle of the Au cathode irradiated by ultraviolet light, changing vertical incidence into oblique incidence, simultaneously pasting a shielding object on partial area of the surface of the Au cathode, only allowing partial ultraviolet light to act on the CMOS target surface, wherein the shielded Au cathode part cannot form an image on the CMOS target surface to form a dark area, the area irradiated by the ultraviolet light on the CMOS target surface can generate an optical image, the ultraviolet light transmitted to the CMOS target surface and photoelectrons tested by the unshielded area of the Au cathode form an overlapped optical image and electronic image area, and only the ultraviolet area which does not reach the CMOS target surface and is absorbed by the Au cathode forms an electronic image emitted by the photoelectrons, and the image can be used for carrying out electron bombardment CMOS research and resolution analysis and test. The effective area of the electronic image is very limited, the electronic image and the optical image are not completely separated due to small interval, the interpretation effect is influenced, in addition, in order to ensure that the generated electronic image reaches the image brightness for research and analysis, the light intensity of the ultraviolet light source irradiating the Au cathode needs to be increased to obtain proper image brightness, and the problems of potential safety hazard of over-strong ultraviolet radiation and the like exist.
The second type is an image processing and separating method, and the specific scheme is as follows: the method comprises the following steps of respectively capturing an optical image when no high voltage is applied and an image in which the optical image and the electronic image are overlapped when high voltage is applied, subtracting (or other image processing methods) the two images by Boolean operation through professional software to obtain the electronic image, and using the electronic image for electron bombardment CMOS electronic image research, wherein the method has the defects that: the detail information of the electronic image processed by the algorithm is lost, the image resolution can not reflect the actual level of electron bombardment CMOS, and in addition, in order to ensure that the processed electronic image obtains proper image gray gain, the contradiction that the ultraviolet light irradiating the Au cathode is too strong, the electronic image can be completely covered by the optical image, and the ultraviolet light intensity is not enough and the electronic image is dim needs to be solved.
Therefore, a method or a device which can completely separate the electron bombardment CMOS electronic image from the optical image, is very suitable for the research of the electron bombardment CMOS electronic image and accurately performs resolution test is urgently needed, and a necessary technical means is provided for research guidance and improvement of the performance level of the electron bombardment CMOS image.
Disclosure of Invention
The invention aims to solve the technical problem of how to solve the problems that an electronic image and an optical image are seriously overlapped and interfered and the resolution of the electronic image cannot be directly and accurately analyzed and tested.
The invention aims to provide a special device for testing the electron image resolution in the electron bombardment CMOS research by utilizing the optical imaging principle, which can directly obtain a completely separated electron image and an optical image, can directly and accurately test the electron image resolution of the electron bombardment CMOS in a vacuum state, provides a basis for researching and improving the resolution level of the electron bombardment CMOS image, fundamentally overcomes the phenomenon that the electron image and the optical image are overlapped or partially overlapped and interfered in the electron bombardment CMOS research, reduces the electron image resolution index or cannot be interpreted, and the development level of the electron bombardment CMOS device is effectively improved. Another object of the present invention is to provide a specific testing method based on the testing device of the present invention.
The basic concept of the testing device and the method of the invention is as follows:
the testing device is partially arranged in a cavity with a vacuum-pumping exhaust pump, and is sequentially provided with a first reflector, a second reflector, an Au cathode and a back-illuminated CMOS image sensor assembly from top to bottom, wherein a target surface part of the CMOS is arranged in the cavity, an amplifying and reading circuit part is arranged outside the cavity, an ultraviolet light source is arranged above the outside of the cavity by a support, and an adjustable high-voltage power supply and a computer are arranged outside the cavity. When the cavity is vacuumized and exhausted and is in a vacuum state, ultraviolet parallel light emitted by an ultraviolet light source is reflected and converged by the first reflector and the second reflector, the brightness is enhanced, a specific oblique incident angle is formed, the ultraviolet parallel light irradiates the surface of the Au cathode, the irradiation range covers the effective area of the whole Au cathode, the Au cathode absorbs photoelectrons generated by the ultraviolet light, the target surface of the CMOS is bombarded under the driving of high accelerating voltage outside the cavity, an electronic image with enhanced brightness is generated, meanwhile, the ultraviolet light which is not absorbed by the Au cathode is directly transmitted to an optical image generated by the target surface of the CMOS and is completely separated from the electronic image without mutual interference, and the resolution index of the electron bombardment CMOS can be accurately obtained by interpreting the resolution pattern of the electronic image.
The device comprises an ultraviolet light source, a cavity, a first reflector, a second reflector, an Au cathode, a back-illuminated CMOS image sensor assembly and a high-voltage power supply, wherein the back-illuminated CMOS image sensor assembly consists of a target surface part and a circuit part; the first reflector, the second reflector, the Au cathode and the target surface part of the back-illuminated CMOS image sensor assembly are sequentially arranged in the cavity along the optical axis direction formed by the axis of the cavity, and the ultraviolet light source, the vacuumizing exhaust pump, the circuit part of the back-illuminated CMOS image sensor assembly and the high-voltage power supply are arranged outside the cavity; the high-voltage power supply is connected with a high-voltage interface of the read-out circuit part of the CMOS image sensor assembly and an Au cathode respectively; the vacuumizing exhaust pump is used for vacuumizing the cavity; the first reflector is positioned right below the ultraviolet light source, shields the ultraviolet light source from directly irradiating the Au cathode, a reflecting surface of the first reflector forms an angle with an optical axis, and can completely reflect ultraviolet parallel light emitted by the ultraviolet light source along the direction of the optical axis to the side wall of the cavity; ultraviolet parallel light emitted by the ultraviolet light source is reflected to the second reflecting mirror through the first reflecting mirror, is reflected by the second reflecting mirror and is enhanced in convergence brightness to form a specific oblique incident angle, and irradiates the surface of the Au cathode, wherein the irradiation range covers the whole Au cathode area; the Au cathode also comprises a pattern with a resolution line pair manufactured on a substrate of fused quartz glass; the Au cathode absorbs photoelectrons generated by ultraviolet light, bombards the target surface of the back-illuminated CMOS image sensor assembly under the driving of high accelerating voltage outside the cavity to generate electron hole pairs, and forms an electronic image with enhanced brightness after EBS process, amplification and analog-to-digital conversion, and meanwhile, the ultraviolet light which is not absorbed by the Au cathode directly transmits to the optical image generated by the target surface of the CMOS, and the optical image is completely separated from the electronic image and does not interfere with each other.
Further, still include:
the first reflector is a plane reflector, and the mirror surface of the first reflector and the optical axis form an angle of 25-40 °
The second reflector is obliquely arranged at the full aperture of the reflected light of the first reflector, and ultraviolet light emitted by the ultraviolet light source is reflected by the first reflector, reflected again by the second reflector and converged and enhanced to form a specific oblique incident angle and irradiate on the surface of the Au cathode.
The second reflector is a concave cylindrical reflector, the radius of the cylindrical surface of the second reflector is 77 mm-78 mm, and the focal length of the second reflector is 145.5 mm-150.5 mm.
The distance between the Au cathode and the target surface part of the CMOS image sensor assembly is 0.5 mm-2 mm.
The Au cathode resolution lines are arranged in parallel in double rows, distributed end to end according to the numerical value from small to large, and can simultaneously read the resolution numerical values of the center and the edge of an electron bombardment CMOS electronic image after imaging.
The computer is connected with the circuit part of the back-illuminated CMOS image sensor assembly through a USB interface and is used for receiving electronic images and optical images generated by electron bombardment of the CMOS.
The reflecting surfaces of the first reflector and the second reflector are plated to the thickness of
Figure BDA0002772750930000051
An aluminum film having a purity of 99.999% or more.
The invention relates to a method for testing the resolution of an electronic image in the research of an electron bombardment CMOS, which comprises the following steps:
A. the computer is connected with the read-out circuit part of the back-illuminated CMOS image sensor component through a USB interface and is used for receiving an electronic image and an optical image generated by electron bombardment CMOS;
B. the anode and the cathode of the high-voltage power supply are respectively connected with a high-voltage interface of the reading circuit part of the CMOS image sensor assembly and the Au cathode;
C. starting a mechanical pump and a molecular pump of the vacuum pumping pump, and turning on an ultraviolet light source;
D. when the vacuum degree of the cavity is better than 1 multiplied by 10-5When mbar occurs, testing is started, and completely separated electron bombardment images and optical images can be obtained by adjusting two links of an accelerating high voltage value of 3000 Vdc-6000 Vdc of a high-voltage power supply and a distance of 0.5 mm-2 mm from an Au cathode image input surface to a back-illuminated CMOS image sensor assembly target surface;
E. by interpreting the resolution pattern of the electronic image, the resolution index of the electron bombardment CMOS electronic image can be accurately obtained.
The invention has the beneficial effects that:
the testing device can directly obtain the completely separated optical image and the electronic image generated by the electron bombardment CMOS under the vacuum state, the brightness of the electronic image is obviously improved, the two images are obviously different, the resolution pattern of the electronic image is interpreted, the resolution index of the electron bombardment CMOS can be accurately obtained, and the development level of the electron bombardment CMOS is further improved through analysis, research and optimized design. The device is applied to the research and development and trial production of two types of products of an electron bombardment CMOS at present, and compared with the prior device which is not used, the electronic image resolution is improved by more than 2.3 times.
Drawings
The following describes embodiments of the present invention in further detail with reference to the accompanying drawings.
FIG. 1 is a schematic diagram of a conventional electron-bombarded CMOS electronic image and optical image shielding separation acquisition method scheme (in the figure, a represents a pure optical image area, b represents a pure electronic image area, c represents a non-imaging area, d represents an area where an electronic image and an optical image overlap, A1 represents an ultraviolet light source, A2 represents a shield, A31 represents a cathode substrate, A32 represents a cathode, and A4 represents a CMOS image sensor).
FIG. 2 is a schematic structural diagram of the testing device of the present invention (in this figure: A represents a pure optical image region, B represents a pure electronic image region, and C represents a non-imaging region).
FIG. 3 is a schematic diagram of the Au cathode structure of the present invention (the diagram is composed of three diagrams of top, middle and bottom, wherein the top diagram is a front view, the middle diagram is a top view, and the bottom diagram is an enlarged diagram of the resolution pattern of the gold cathode, wherein D1 represents the conductive metal layer, and D2 represents the central Au cathode pattern region).
Figure 4 is an image of a superposition of an electron bombarded CMOS electronic image and an optical image prior to the use of the present invention.
FIG. 5 is a fully separated image of an electron bombarded CMOS electronic image and an optical image after applying the present invention (in this figure: E1 represents the optical image and E2 represents the electronic image).
In fig. 2: the device comprises a 1-ultraviolet light source, a 2-cavity with a vacuumizing exhaust pump, a 3-first reflector, a 4-second reflector, a 5-Au cathode, a 6-back-illuminated CMOS image sensor assembly, a 7-high-voltage power supply, an 8-computer and a 9-vacuumizing exhaust pump.
Detailed Description
Referring to fig. 2, the technical solution of the present invention is explained: the invention mainly comprises an ultraviolet light source 1, a cavity 2 with a vacuumizing exhaust pump, a first reflector 3, a second reflector 4, an Au cathode 5, a back-illuminated CMOS image sensor assembly 6, a high-voltage power supply 7 and a computer 8. Wherein the first reflector 3, the Au cathode 5 and the back-illuminated CMOS image sensor assembly 6 are arranged in sequence along the optical axis, the target surfaces of the first reflector 3, the second reflector 4, the gold cathode 5 and the back-illuminated CMOS image sensor assembly 6 are arranged inside the cavity 2 with the vacuumizing exhaust pump, the circuit part of the back-illuminated CMOS image sensor assembly 6, the high-voltage power supply 7 and the computer 8 are arranged outside the cavity 2 with the vacuumizing exhaust pump, the ultraviolet light source 1 is arranged above the outside of the cavity by a bracket, the ultraviolet light source 1 provides input optical signals for electron bombardment CMOS, the high-voltage power supply 7 provides accelerating high voltage for photoelectron bombardment of the target surface of the back-illuminated CMOS image sensor assembly 6, the positive and negative electrodes of the back-illuminated CMOS image sensor assembly 6 are respectively connected with the read-out circuit and the Au cathode 5, the computer 8 is connected with the read-out circuit through a USB3.0 interface, and the distance between the Au cathode 5 and the target surface of the CMOS image sensor assembly 6 is 0.5 mm-2 mm.
The high-voltage power supply 7 has the function of adjusting the output voltage.
The computer 8 can be a notebook computer, a portable computer or an industrial personal computer and the like.
Referring to fig. 2, the ultraviolet light source 1 is a deuterium lamp, model number XD5665-10J, herrieus, germany.
Referring to fig. 2, the cavity 2 with the evacuation pump is a self-made special part and is formed by integrally connecting a plurality of structural components, the cavity is made of 1Cr18Ni9 or kovar alloy or aluminum alloy, and the main functions are as follows: a vacuum state is realized and maintained, and a target surface of the first reflecting mirror 1, the second reflecting mirror 2 and the back-illuminated CMOS image sensor assembly 6 are installed, and the vacuumizing exhaust pump adopts a combination of an MVP 070-3 mechanical pump and a HiPace 400 molecular pump of PFEIFFER (Puff company) in Germany.
Referring to fig. 2, the first reflector 3 and the second reflector 4 are self-made special parts made of optical glass K9, and are installed on corresponding reflector seats in the vacuum housing, and when the reflectors are installed, the installation positions and the inclination angles are properly adjusted, respectively, and ultraviolet light emitted by the ultraviolet light source 1 passes through the first reflector3, and then reflected and converged by the second reflecting mirror 4 to form an oblique incident angle of 35-60 degrees with the surface of the Au cathode 5, wherein the first reflecting mirror 3 is a plane reflecting mirror, the second reflecting mirror 4 is a concave cylindrical reflecting mirror, the cylindrical radius of the second reflecting mirror 4 is 77-78 mm, the focal length is 145.5-150.5 mm, and the plating thickness of the reflecting surfaces of the first reflecting mirror 3 and the second reflecting mirror 4 is
Figure BDA0002772750930000071
An aluminum film having a purity of 99.999% or more.
Referring to fig. 3, the Au cathode 5 is a special cathode which is made with resolution line pair patterns on the substrate of fused quartz glass, arranged in double rows and distributed end to end according to the numerical value from small to large, and can read out the resolution data of the center and the edge of the electron bombardment CMOS electronic image after imaging, the resolution line pair patterns are rectangular stripes and are evaporated in the center area of the inner surface of the Au cathode window, and the metal layers of Ni and Cr evaporated on the inner surface of the substrate of fused quartz glass play the role of conducting high voltage.
Referring to fig. 2, the back-illuminated CMOS image sensor device 6 is a commercially available device, the chip is sony IMX178LQJ, and the amplifying and reading circuit is a suzhou zhenwang ZWO178 circuit module.
Referring to fig. 2, the high-voltage power supply 7 is a self-made direct-current high-voltage power supply, and is adjustable from 0Vdc to 15000 Vdc.
Referring to fig. 2, 3, 4 and 5, the working condition of the invention is a quasi-darkroom condition, and the test operation flow is as follows:
A. installing a first reflector 3 and a second reflector 4 at corresponding positions in a cavity 2 with a vacuumizing exhaust pump;
B. mounting an Au cathode 5, a target surface of a back-illuminated CMOS image sensor assembly 6 and a circuit to corresponding positions of a cavity 2 with a vacuumizing exhaust pump, wherein the distance from an image input surface of the Au cathode 5 to the target surface of the back-illuminated CMOS image sensor assembly 6 is 0.5-2 mm, so that ultraviolet parallel light emitted by an ultraviolet light source 1 covers the whole image input surface area of the Au cathode 5 after being reflected by a first reflector 3 and a second reflector 4 and the convergence brightness is enhanced, and properly adjusting the mounting positions and the inclination angles of the first reflector 3 and the second reflector 4 respectively if necessary, and fixing the two reflectors after adjustment;
C. the computer 8 is connected with a partial image output interface of a readout circuit of the back-illuminated CMOS image sensor assembly 6, and is prepared to receive an electronic image and an optical image generated by electron bombardment CMOS, the positive electrode and the negative electrode of the high-voltage power supply 7 are respectively connected with a partial high-voltage interface of the readout circuit of the CMOS image sensor assembly 6 and the Au cathode 5, a mechanical pump and a molecular pump of the cavity 2 with the vacuumizing exhaust pump are started in sequence, and the ultraviolet light source 1 is started;
D. when the vacuum degree of the cavity 2 with the vacuumizing exhaust pump is better than 1 multiplied by 10-5When mbar occurs, testing is started, two links of accelerating high voltage value (3000 Vdc-6000 Vdc) of the high-voltage power supply 7 and distance (0.5 mm-2 mm) from the image input surface of the Au cathode 5 to the target surface of the back-illuminated CMOS image sensor assembly 6 are adjusted, completely separated electron bombardment images and optical images can be obtained, and resolution indexes of electron bombardment CMOS can be accurately obtained by interpreting resolution patterns of the electron images.

Claims (9)

1. A device for testing electronic image resolution in electron-bombarded CMOS studies, characterized by:
the device comprises an ultraviolet light source (1), a cavity (2), a first reflector (3), a second reflector (4), an Au cathode (5), a back-illuminated CMOS image sensor assembly (6) and a high-voltage power supply (7), wherein the back-illuminated CMOS image sensor assembly (6) consists of a target surface part and a circuit part;
the target surface parts of the first reflector (3), the second reflector (4), the Au cathode (5) and the back-illuminated CMOS image sensor assembly (6) are sequentially arranged along the direction of an optical axis formed by the axis of the cavity (2) in the cavity (2), and the ultraviolet light source (1), the vacuumizing exhaust pump (9), the circuit part of the back-illuminated CMOS image sensor assembly (6) and the high-voltage power supply (7) are arranged outside the cavity (2);
the high-voltage power supply (7) is connected with a high-voltage interface of a reading circuit part of the CMOS image sensor assembly (6) and the Au cathode (5) respectively; the vacuumizing exhaust pump (9) is used for vacuumizing the cavity (2);
the first reflector (3) is positioned right below the ultraviolet light source (1), shields the ultraviolet light source (1) from directly irradiating the Au cathode (5), the optical axis of the reflecting surface of the first reflector is at an angle, ultraviolet parallel light emitted from the ultraviolet light source (1) along the direction of the optical axis can be completely reflected to the side wall of the cavity (2), and the second reflector (4) is positioned on the side wall of the cavity (2) and can completely reflect the ultraviolet parallel light and irradiate the surface of the Au cathode (5);
ultraviolet parallel light emitted by the ultraviolet light source (1) is reflected to the second reflecting mirror (4) through the first reflecting mirror (3), is reflected by the second reflecting mirror (4) and is enhanced in convergence brightness to form a specific oblique incident angle, and irradiates the surface of the Au cathode (5), wherein the irradiation range covers the whole area of the Au cathode (5);
the Au cathode (5) also comprises a pattern with a resolution line pair manufactured on a substrate of fused quartz glass;
photoelectrons generated after the Au cathode (5) absorbs ultraviolet light bombard the target surface of the back-illuminated CMOS image sensor assembly (6) to generate electron hole pairs under the drive of accelerating voltage, an electronic image with enhanced brightness is formed after EBS process, amplification and analog-to-digital conversion, and meanwhile, the ultraviolet light which is not absorbed by the Au cathode directly transmits to an optical image generated by the target surface of the CMOS, and the optical image is completely separated from the electronic image and does not interfere with each other.
2. The test device of claim 1, wherein:
the first reflector (3) is a plane reflector, and the reflecting surface of the plane reflector and the optical axis form an angle of 25-40 degrees.
3. The test device of claim 2, wherein:
the second reflector (4) is obliquely arranged at the full aperture of the reflected light of the first reflector (3), and ultraviolet light emitted by the ultraviolet light source (1) is reflected by the first reflector (3), reflected again by the second reflector (4) and converged and enhanced to form a specific oblique incidence angle and irradiates the surface of the Au cathode (5).
4. The test device of claim 3, wherein:
the second reflector (4) is a concave cylindrical reflector, the radius of the cylindrical surface of the concave cylindrical reflector is 77 mm-78 mm, and the focal length of the concave cylindrical reflector is 145.5 mm-150.5 mm.
5. The test device of claim 1, wherein:
the distance between the Au cathode (5) and the target surface part of the CMOS image sensor assembly (6) is 0.5-2 mm.
6. The test device of claim 5, wherein:
the resolution lines made on the Au cathode (5) are arranged in parallel in double rows and distributed end to end according to the numerical value from small to large.
7. The test device of any one of claims 1 to 6, wherein:
the device also comprises a computer (8), wherein the computer (8) is connected with the circuit part of the back-illuminated CMOS image sensor assembly (6) through a USB interface and is used for receiving an electronic image and an optical image generated by electron bombardment CMOS.
8. The test device of any one of claims 1 to 6, wherein:
the reflecting surfaces of the first reflecting mirror (3) and the second reflecting mirror (4) are plated to the thickness of
Figure FDA0002772750920000021
An aluminum film having a purity of 99.999% or more.
9. A method for testing electronic image resolution in electron bombardment CMOS research is characterized by comprising the following steps:
A. the computer (8) is connected with a read-out circuit part of the back-illuminated CMOS image sensor component (6) through a USB interface and is used for receiving an electronic image and an optical image generated by electron bombardment CMOS;
B. the positive electrode and the negative electrode of the high-voltage power supply (7) are respectively connected with a high-voltage interface of a read-out circuit part of the CMOS image sensor assembly (6) and an Au cathode (5);
C. starting a mechanical pump and a molecular pump of the vacuum pumping pump (9), and turning on the ultraviolet light source (1);
D. when the vacuum degree of the cavity (2) is better than 1 multiplied by 10-5When mbar occurs, testing is started, and completely separated electron bombardment images and optical images can be obtained by adjusting two links of an accelerating high voltage value of 3000 Vdc-6000 Vdc of a high-voltage power supply (7) and a distance of 0.5 mm-2 mm from an image input surface of an Au cathode (5) to a target surface of a back-illuminated CMOS image sensor assembly (6);
E. by interpreting the resolution pattern of the electronic image, the resolution index of the electron bombardment CMOS electronic image can be accurately obtained.
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