CN112349654B - Zener integrated circuit structure and manufacturing method thereof - Google Patents
Zener integrated circuit structure and manufacturing method thereof Download PDFInfo
- Publication number
- CN112349654B CN112349654B CN202011232883.0A CN202011232883A CN112349654B CN 112349654 B CN112349654 B CN 112349654B CN 202011232883 A CN202011232883 A CN 202011232883A CN 112349654 B CN112349654 B CN 112349654B
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- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 230000000087 stabilizing effect Effects 0.000 claims abstract description 61
- 238000007493 shaping process Methods 0.000 claims abstract description 9
- 238000005538 encapsulation Methods 0.000 claims description 18
- 238000004806 packaging method and process Methods 0.000 claims description 11
- 238000004891 communication Methods 0.000 claims description 8
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 238000004512 die casting Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000005253 cladding Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003381 stabilizer Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/32—Holders for supporting the complete device in operation, i.e. detachable fixtures
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Emergency Protection Circuit Devices (AREA)
- Die Bonding (AREA)
Abstract
The invention discloses a zener integrated circuit structure, which comprises an outer shell, a voltage stabilizing chip and a stabilizing piece, wherein the stabilizing piece is arranged on the outer side of the voltage stabilizing chip and is respectively connected with the outer shell and the voltage stabilizing chip, the outer shell is coated on the voltage stabilizing chip, the stabilizing piece comprises a fixed supporting foot, an elastic piece and a shaping ring, one end of the fixed supporting foot is fixedly connected with the shaping ring, the other end of the fixed supporting foot is fixedly connected with the elastic piece, and the elastic piece is arranged between the fixed supporting foot and the outer shell.
Description
Technical Field
The present invention relates to the field of zener technology, and in particular, to a zener integrated circuit structure and a method for manufacturing the same.
Background
The zener diode is also called a voltage-stabilizing diode, the current of which can be changed in a large range, but the voltage is basically unchanged, in the prior art, when the zener diode is used, the structural strength of the zener diode is lower, and under the overheat state of working, the internal components are damaged due to external pressure, so that the service life is shortened.
Disclosure of Invention
The invention provides a zener integrated circuit structure and a manufacturing method thereof, which are used for solving the problem that in the prior art, when a zener is in an overheat state, internal components are damaged under the condition of external pressure, so that the service life is reduced.
The utility model provides a zener integrated circuit structure, includes shell body, steady voltage chip and stabilizing piece, stabilizing piece set up in steady voltage chip's outside, and respectively with the shell body with steady voltage chip connects, the shell body cladding in steady voltage chip sets up, stabilizing piece is including fixed support foot, elastic component and design circle, the one end of fixed support foot with design circle fixed connection, the other end of fixed support foot with elastic component fixed connection, the elastic component set up in fixed support foot with between the shell body.
The shaping ring comprises a plurality of annular plates and supporting columns, the annular plates encircle the voltage stabilizing chip, and the supporting columns are arranged among the annular plates.
The fixed foot that supports is including being equipped with the bellied and bracing piece of butt that stabilizes the hole, the both ends of bracing piece respectively with the bellied with design circle fixed connection of butt, the bellied set up in the bracing piece keep away from the one end of steady voltage chip, and with elastic component fixed connection, the hole of stabilizing runs through along the bellied length extending direction of butt the bellied.
The outer shell comprises a first electrode pin, a second electrode pin, an encapsulation shell, a unidirectional film pin and a unidirectional film sleeve, wherein the encapsulation shell is arranged on the outer peripheral side of the stabilizing piece, the first electrode pin penetrates through the encapsulation shell and is connected with the voltage stabilizing chip, the second electrode pin is arranged on the upper side of the encapsulation shell, the unidirectional film pin is arranged on the lower side of the encapsulation shell and is used for coating the first electrode pin, and the unidirectional film sleeve is arranged on the upper side of the encapsulation shell and is used for coating the second electrode pin.
The unidirectional film pin is provided with an external thread, a communication hole and a connecting end, wherein the communication hole is arranged in the connecting end and is matched with the first electrode pin, and the external thread is arranged on the outer peripheral side of the connecting end and is in threaded connection with the unidirectional film sleeve.
The unidirectional film sleeve is provided with an external annular sleeve and an internal thread groove, the internal thread groove is arranged in the external annular sleeve and is in threaded connection with the unidirectional film pin, and the external annular sleeve is arranged on the outer side of the second electrode pin.
The invention also provides a manufacturing method of the zener integrated circuit structure, which comprises the following steps:
adopting a die casting die to die-cast the packaging shell;
a voltage stabilizing chip and a stabilizing piece are arranged in the packaging shell;
the upper side and the lower side of the packaging shell are respectively provided with a second electrode pin and a first electrode pin so as to be electrically connected with the voltage stabilizing chip;
and the unidirectional film sleeve and the unidirectional film pin are respectively arranged at the outer side of the second electrode pin and the outer side of the first electrode pin, so that the manufacture of the zener integrated circuit structure can be completed.
The beneficial effects of the invention are as follows: on the basis of the prior art, the zener diode circuit structure is improved, and the fixed supporting pins, the elastic piece and the outer shell are matched with each other, so that the zener diode integrated circuit structure can effectively resist external pressure, the damage of internal components of the zener diode is avoided, and the service life of the zener diode is prolonged.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a zener integrated circuit structure of the present invention.
Fig. 2 is a schematic top view of a stabilizer of a zener integrated circuit structure of the present invention.
Fig. 3 is a schematic diagram illustrating steps of a method for fabricating a zener integrated circuit structure according to the present invention.
10-shell body, 20-voltage stabilizing chip, 30-stabilizing piece, 11-first electrode pin, 12-second electrode pin, 13-packaging shell, 14-one-way film pin, 15-one-way film sleeve, 31-fixed supporting pin, 32-elastic piece, 33-shaping ring, 131-radiating hole, 132-limiting rod, 133-limiting end, 141-external screw thread, 142-communication hole, 143-connecting end, 151-external ring sleeve, 152-internal screw thread groove, 311-abutting protrusion, 312-supporting rod, 313-stabilizing hole, 331-annular plate and 332-supporting column.
Detailed Description
Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative and intended to explain the present invention and should not be construed as limiting the invention.
In the description of the present invention, it should be understood that the terms "length," "width," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like indicate orientations or positional relationships based on the orientation or positional relationships shown in the drawings, merely to facilitate describing the present invention and simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present invention. Furthermore, in the description of the present invention, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
Referring to fig. 1 to 3, the present invention provides a technical solution:
the utility model provides a zener integrated circuit structure, includes shell body 10, steady voltage chip 20 and steady piece 30, steady piece 30 set up in steady voltage chip 20's outside, and respectively with shell body 10 with steady voltage chip 20 connects, shell body 10 cladding in steady voltage chip 20 sets up, steady piece 30 is including fixing support foot 31, elastic component 32 and setting circle 33, the one end of fixing support foot 31 with setting circle 33 fixed connection, the other end of fixing support foot 31 with elastic component 32 fixed connection, elastic component 32 set up in between fixing support foot 31 and the shell body 10.
In this embodiment, the outer housing 10 is configured to protect the internal structure of the zener diode, the voltage stabilizing chip 20 is configured to control the magnitude of the current passing through the circuit of the zener diode, the stabilizing member 30 is configured to improve the structural strength between the outer housing 10 and the voltage stabilizing chip 20, prevent the outer housing 10 from deforming to damage the voltage stabilizing chip 20, the fixing support 31 is fixedly connected with the fixing ring 33, and utilize the elastic member 32 to connect with the outer housing 10, when the outer housing 10 is deformed by pressure, the impact of the deformation on the voltage stabilizing chip 20 can be effectively reduced by the elastic member 32, thereby reducing the damage to the internal components of the voltage stabilizing chip 20.
Further, the shaping ring 33 includes a plurality of annular plates 331 and supporting columns 332, the annular plates 331 are disposed around the voltage stabilizing chip 20, and the supporting columns 332 are disposed between the annular plates 331.
In this embodiment, the plurality of annular plates 331 are configured to support the voltage stabilizing chip 20, so as to effectively improve the structural strength of the voltage stabilizing chip 20, even if the elastic member 32 is damaged, the structure of the voltage stabilizing chip 20 is not deformed, and the internal components are damaged, and the support columns 332 are disposed between two adjacent annular plates 331, so as to improve the structural strength of the annular plates 331, thereby enabling the annular plates 331 to bear the protection function of the voltage stabilizing chip 20.
Further, the fixing support leg 31 includes a support protrusion 311 provided with a stabilizing hole 313 and a support bar 312, two ends of the support bar 312 are respectively fixedly connected with the support protrusion 311 and the setting ring 33, the support protrusion 311 is disposed at one end of the support bar 312 away from the voltage stabilizing chip 20 and is fixedly connected with the elastic member 32, and the stabilizing hole 313 penetrates through the support protrusion 311 along the length extending direction of the support protrusion 311.
In the present embodiment, the abutment protrusion 311 is configured to be connected to the elastic member 32, the support rod 312 is configured to connect the abutment protrusion 311 and the annular plate 331, and the stabilizing hole 313 is configured to be engaged with the package case 13, so that the abutment protrusion 311 can be slidably connected to the package case 13.
Further, the outer case 10 includes a first electrode pin 11, a second electrode pin 12, an encapsulation case 13, a unidirectional film pin 14 and a unidirectional film sleeve 15, the encapsulation case 13 is disposed on an outer peripheral side of the stabilizer 30, the first electrode pin 11 penetrates through the encapsulation case 13 to be connected with the voltage stabilizing chip 20, the second electrode pin 12 is disposed on an upper side of the encapsulation case 13, the unidirectional film pin 14 is disposed on a lower side of the encapsulation case 13 and is used for coating the first electrode pin 11, and the unidirectional film sleeve 15 is disposed on an upper side of the encapsulation case 13 and is used for coating the second electrode pin 12.
In this embodiment, the first electrode pin 11 and the second electrode pin 12 are used for guiding current, the package case 13 is used for sealing the voltage stabilizing chip 20, and the unidirectional film pin 14 and the unidirectional film sleeve 15 are mutually matched, so that the zener integrated circuit structure can effectively form a series connection.
Further, the one-way film pin 14 has an external thread 141, a communication hole 142, and a connection end 143, the communication hole 142 is disposed inside the connection end 143 and is engaged with the first electrode pin 11, and the external thread 141 is disposed on the outer circumferential side of the connection end 143 and is screwed with the one-way film sleeve 15.
In this embodiment, the external thread 141 is configured to cooperate with the unidirectional film sleeve 15, so as to fix the connection between the unidirectional film sleeve 15 and the unidirectional film pin 14, the communication hole 142 is configured to allow the first electrode pin 11 to pass through, so that the first electrode pin 11 can be electrically connected with the second electrode pin 12, and the connection end 143 is configured to cover the first electrode pin 11, so as to protect the first electrode pin 11.
Further, the unidirectional film sheath 15 has an outer collar 151 and an internal thread groove 152, the internal thread groove 152 is disposed inside the outer collar 151 and is in threaded connection with the unidirectional film pin 14, and the outer collar 151 is disposed outside the second electrode pin 12.
In this embodiment, the outer collar 151 is configured to protect the internal thread groove 152, so that the internal thread groove 152 is disposed in the outer collar 151 and has a certain protection effect on the second electrode pin 12.
Further, the package 13 includes a limiting rod 132 and a limiting end 133, where the limiting rod 132 is engaged with the stabilizing hole 313 and penetrates through the abutment protrusion 311, and the limiting end 133 is disposed on a side of the limiting rod 132 away from the package 13 and is fixedly connected with the elastic member 32.
In this embodiment, the limiting rod 132 is configured to be engaged with the stabilizing hole 313, so that the package 13 is connected with the stabilizing member 30, thereby having protection capability on the voltage stabilizing chip 20, and the limiting end 133 is configured to be connected with the elastic member 32, so that when the package 13 is subjected to external pressure, the generated deformation drives the limiting rod 132 to move, and the elastic member 32 is utilized to reduce the impact on the voltage stabilizing chip 20 caused by the movement, thereby avoiding damage on the voltage stabilizing chip 20.
Further, the package shell 13 further has a plurality of heat dissipation holes 131, and the plurality of heat dissipation holes 131 are all disposed on the upper side of the package shell 13 and penetrate through the package shell 13.
In this embodiment, the heat dissipation holes 131 are used for dissipating heat, so as to prevent the package housing 13 from being deformed due to heat accumulation during operation, and finally affecting the internal components of the voltage stabilizing chip 20.
The invention also provides a manufacturing method of the zener integrated circuit structure, which comprises the following steps:
s101, adopting a die-casting die to die-cast the packaging shell 13;
s102, installing a voltage stabilizing chip 20 and a stabilizing piece 30 in the package shell 13;
s103, respectively mounting a second electrode pin 12 and a first electrode pin 11 on the upper side and the lower side of the packaging shell 13 so as to be electrically connected with the voltage stabilizing chip 20;
s104, the unidirectional film sleeve 15 and the unidirectional film pin 14 are respectively arranged on the outer side of the second electrode pin 12 and the outer side of the first electrode pin 11, so that the manufacturing of the zener integrated circuit structure can be completed.
The invention improves the structure of the integrated circuit structure of the zener based on the prior art, and utilizes the mutual matching of the fixed supporting pin 31, the elastic piece 32 and the outer shell 10, so that the integrated circuit structure of the zener can effectively resist the external pressure, thereby avoiding the damage of the internal components of the zener, and prolonging the service life of the zener.
The above disclosure is only a preferred embodiment of the present invention, and it should be understood that the scope of the invention is not limited thereto, and those skilled in the art will appreciate that all or part of the procedures described above can be performed according to the equivalent changes of the claims, and still fall within the scope of the present invention.
Claims (5)
1. The zener integrated circuit structure is characterized by comprising an outer shell, a voltage stabilizing chip and a stabilizing piece, wherein the stabilizing piece is arranged on the outer side of the voltage stabilizing chip and is respectively connected with the outer shell and the voltage stabilizing chip, the outer shell is coated on the voltage stabilizing chip, the stabilizing piece comprises a fixed supporting foot, an elastic piece and a shaping ring, one end of the fixed supporting foot is fixedly connected with the shaping ring, the other end of the fixed supporting foot is fixedly connected with the elastic piece, and the elastic piece is arranged between the fixed supporting foot and the outer shell;
the outer shell comprises a first electrode pin, a second electrode pin, an encapsulation shell, a unidirectional film pin and a unidirectional film sleeve, wherein the encapsulation shell is arranged on the outer peripheral side of the stabilizing piece, the first electrode pin penetrates through the encapsulation shell to be connected with the voltage stabilizing chip, the second electrode pin is arranged on the upper side of the encapsulation shell, the unidirectional film pin is arranged on the lower side of the encapsulation shell and coats the first electrode pin, and the unidirectional film sleeve is arranged on the upper side of the encapsulation shell and coats the second electrode pin;
the fixed supporting leg comprises a supporting protrusion provided with a stabilizing hole and a supporting rod, two ends of the supporting rod are fixedly connected with the supporting protrusion and the shaping ring respectively, the supporting protrusion is arranged at one end of the supporting rod far away from the voltage stabilizing chip and is fixedly connected with the elastic piece, and the stabilizing hole penetrates through the supporting protrusion along the length extending direction of the supporting protrusion;
the packaging shell comprises a limiting rod and a limiting end head, wherein the limiting rod is matched with the stabilizing hole and penetrates through the abutting protrusion, and the limiting end head is arranged on one side, away from the packaging shell, of the limiting rod and is fixedly connected with the elastic piece.
2. The zener integrated circuit structure of claim 1 wherein the shaping ring comprises a plurality of annular plates disposed around the voltage regulator chip and support posts disposed between the plurality of annular plates.
3. The zener integrated circuit structure of claim 1 wherein the unidirectional film pin has an external thread, a communication hole and a connection terminal, the communication hole is disposed inside the connection terminal and is engaged with the first electrode pin, and the external thread is disposed on an outer peripheral side of the connection terminal and is in threaded connection with the unidirectional film sheath.
4. The zener integrated circuit structure of claim 3 wherein the unidirectional film sheath has an outer collar and an internal thread groove, the internal thread groove is disposed inside the outer collar and is in threaded connection with the unidirectional film pin, and the outer collar is disposed outside the second electrode pin.
5. A method of fabricating a zener integrated circuit structure comprising a zener integrated circuit structure as recited in claim 4, comprising the steps of:
adopting a die casting die to die-cast the packaging shell;
a voltage stabilizing chip and a stabilizing piece are arranged in the packaging shell;
the upper side and the lower side of the packaging shell are respectively provided with a second electrode pin and a first electrode pin so as to be electrically connected with the voltage stabilizing chip;
and the unidirectional film sleeve and the unidirectional film pin are respectively arranged at the outer side of the second electrode pin and the outer side of the first electrode pin, so that the manufacture of the zener integrated circuit structure can be completed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011232883.0A CN112349654B (en) | 2020-11-06 | 2020-11-06 | Zener integrated circuit structure and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011232883.0A CN112349654B (en) | 2020-11-06 | 2020-11-06 | Zener integrated circuit structure and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112349654A CN112349654A (en) | 2021-02-09 |
| CN112349654B true CN112349654B (en) | 2023-11-24 |
Family
ID=74429791
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011232883.0A Active CN112349654B (en) | 2020-11-06 | 2020-11-06 | Zener integrated circuit structure and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112349654B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN208173575U (en) * | 2018-03-06 | 2018-11-30 | 泉州闲克鞋业有限公司 | A kind of antishock device of integrated antenna package |
| CN208622708U (en) * | 2018-08-23 | 2019-03-19 | 世晶半导体(深圳)有限公司 | A kind of high intensity formula zener diode |
| CN208706638U (en) * | 2018-10-11 | 2019-04-05 | 深圳市鑫全动力科技有限公司 | A kind of straight-plug-type integrated circuit chip |
-
2020
- 2020-11-06 CN CN202011232883.0A patent/CN112349654B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN208173575U (en) * | 2018-03-06 | 2018-11-30 | 泉州闲克鞋业有限公司 | A kind of antishock device of integrated antenna package |
| CN208622708U (en) * | 2018-08-23 | 2019-03-19 | 世晶半导体(深圳)有限公司 | A kind of high intensity formula zener diode |
| CN208706638U (en) * | 2018-10-11 | 2019-04-05 | 深圳市鑫全动力科技有限公司 | A kind of straight-plug-type integrated circuit chip |
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| Publication number | Publication date |
|---|---|
| CN112349654A (en) | 2021-02-09 |
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