CN112109410A - Preparation method of perovskite quantum dot film - Google Patents

Preparation method of perovskite quantum dot film Download PDF

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Publication number
CN112109410A
CN112109410A CN202011030093.4A CN202011030093A CN112109410A CN 112109410 A CN112109410 A CN 112109410A CN 202011030093 A CN202011030093 A CN 202011030093A CN 112109410 A CN112109410 A CN 112109410A
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quantum dot
perovskite quantum
dot film
extruder
particles
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喻四海
童建宇
施法宽
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Kunshan Bye Polymer Material Co ltd
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Kunshan Bye Polymer Material Co ltd
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18Manufacture of films or sheets
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336Illuminating devices
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2323/00Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers
    • C08J2323/02Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers not modified by chemical after treatment
    • C08J2323/04Homopolymers or copolymers of ethene
    • C08J2323/08Copolymers of ethene
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2353/00Characterised by the use of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Derivatives of such polymers
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2353/00Characterised by the use of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Derivatives of such polymers
    • C08J2353/02Characterised by the use of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Derivatives of such polymers of vinyl aromatic monomers and conjugated dienes
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2375/00Characterised by the use of polyureas or polyurethanes; Derivatives of such polymers
    • C08J2375/04Polyurethanes
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K13/00Use of mixtures of ingredients not covered by one single of the preceding main groups, each of these compounds being essential
    • C08K13/02Organic and inorganic ingredients
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/16Halogen-containing compounds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/34Silicon-containing compounds
    • C08K3/36Silica
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/04Oxygen-containing compounds
    • C08K5/13Phenols; Phenolates
    • C08K5/134Phenols containing ester groups
    • C08K5/1345Carboxylic esters of phenolcarboxylic acids

Abstract

The invention discloses a preparation method of a perovskite quantum dot film, which comprises the following steps: 1) preparation of perovskite quantum dot polymer particles: 2) preparing a perovskite quantum dot film: respectively adding PP particles, EVOH particles and the perovskite quantum dot polymer particles prepared in the step 1), EVOH particles and PP particles into an extruder A, an extruder B, an extruder C, an extruder D and an extruder E through a vacuum feeding system, and extruding the mixture into a film through a multi-layer co-extrusion casting machine to obtain the required perovskite quantum dot film. According to the invention, the thermoplastic elastomer is used as a dispersing agent, the perovskite quantum dot polymer particles are prepared by a high-temperature hot injection method, and the perovskite quantum dot polymer particles and other polymers are directly co-extruded without complicated centrifugation, separation and redispersion to obtain the perovskite quantum dot film.

Description

Preparation method of perovskite quantum dot film
Technical Field
The invention belongs to the technical field of perovskite quantum dot films, and particularly relates to a preparation method of a perovskite quantum dot film.
Background
The perovskite quantum dot film can be used as an optical conversion film of a wide-color-gamut Liquid Crystal Display (LCD) backlight module due to the excellent fluorescence property of the perovskite quantum dot film, and has great market potential. Since perovskite quantum dots are sensitive to water and oxygen, in order to protect perovskite quantum dots from water and oxygen in the surrounding environment, perovskite quantum dots are typically dispersed in a polymeric material and protected with a high barrier optical thin film. Generally, the perovskite quantum dot film is prepared by synthesizing perovskite quantum dots in an organic solvent by a hot injection method, centrifuging, separating and purifying, uniformly mixing the purified quantum dots into UV glue or polymer resin, coating the glue or polymer resin material containing the quantum dots on a water-oxygen barrier film, covering the water-oxygen barrier film with another water-oxygen barrier film, and curing the resin material by a UV or hot curing method to obtain the perovskite quantum dot film with a sandwich structure. However, insufficient passivation of the perovskite quantum dot surface ligands due to excessive removal of the perovskite quantum dot surface ligands during separation and purification often results in low fluorescence efficiency (PL QY) and poor photostability of the resulting perovskite quantum dot films. In addition, the perovskite quantum dot film requires a water-oxygen barrier film with higher barrier property to ensure the aging stability of the quantum dot film, and the production cost of the quantum dot film is greatly increased. Moreover, the quantum dot film prepared by adopting a coating mode has higher requirements on equipment and processes, especially cannot meet the requirements when the quantum dot film with low thickness is prepared, the upper limit requirement on the thickness of an optical film is provided for liquid crystal display screens such as mobile phones and flat panels at present, and the thickness of partial products is required to be less than 55um, so that a simple, convenient and efficient method for preparing the perovskite quantum dot film is needed to be explored, the ultrathin product can be effectively prepared, and the perovskite quantum dot film has high-efficiency luminescence and good stability under severe aging conditions, especially under illumination aging conditions and high-temperature and high-humidity aging conditions.
Disclosure of Invention
To solve the problems set forth in the background art described above. The invention provides a perovskite quantum dot film and a preparation method thereof.
In order to achieve the purpose, the invention provides the following technical scheme: 1) preparation of perovskite quantum dot polymer particles:
mixing the raw materials in a molar ratio of 1:8: 13 metal halide a, oleic acid, oleylamine were charged into a stirring tank, and vacuum-dried at 120 ℃ for 30 minutes to remove moisture in the raw material. The resulting mixture was heated to 150 ℃ under nitrogen blanket until the metal halide was completely dissolved. And then heating to 160-220 ℃, adding the thermoplastic elastomer, after the thermoplastic elastomer is completely molten, rapidly injecting a certain amount of precursor B under vigorous stirring, and keeping the molar ratio of the metal halide A to the precursor B to be 1: 0.4. then respectively adding the diffusion particles and the antioxidant, fully stirring, adding the uniformly mixed product into a double-screw extruder after vacuum defoamation, and cooling and granulating the extruded product to obtain the required perovskite quantum dot polymer particles;
2) preparing a perovskite quantum dot film:
respectively adding PP particles, EVOH particles and the perovskite quantum dot polymer particles prepared in the step 1), EVOH particles and PP particles into an extruder A, an extruder B, an extruder C, an extruder D and an extruder E through a vacuum feeding system, and extruding the mixture into a film through a multi-layer co-extrusion casting machine to obtain the required perovskite quantum dot film.
Preferably, the softening temperature of the thermoplastic elastomer in step 1) is between 120 ℃ and 220 ℃.
Preferably, the thermoplastic elastomer is one or a mixture of SEBS thermoplastic elastomer, EVA thermoplastic elastomer, TPU thermoplastic elastomer and acrylic block copolymer.
Preferably, in the step 1), the metal cation of the metal halide A is Pb2+、Sn2+、Sb2+、 Bi2+、Ag+、Zn2+、Mn2+、Cu2+Or Ge+One or more of (a).
Preferably, the halogen element is Cl-、Br-、I-One or more of (a).
Preferably, the precursor B is an oleate of a metal cation or a positively charged organic cation, and the precursor B is Cs+、Rb+、FA+(HN=CH-NH3+) One or more of the oleates of (a).
Compared with the prior art, the invention has the beneficial effects that:
the perovskite quantum dot polymer particles are prepared by a high-temperature hot injection method without complicated centrifugation, separation and redispersion, and are directly co-extruded with other polymers to obtain the perovskite quantum dot film. The perovskite quantum dot film prepared by adopting a multilayer co-extrusion method has the total thickness of 40um, and meets the requirement of ultrathin liquid crystal display screens such as mobile phones and flat panels on the thickness of the quantum dot film. The perovskite quantum dot film prepared by the method has high fluorescence quantum yield and extremely narrow half-peak width. In addition, the prepared perovskite quantum dot film has ultrahigh light stability and high-temperature high-humidity stability. The perovskite quantum dot film prepared by the invention is used as a down-conversion fluorescent material of a backlight module of a liquid crystal display, the NTSC color gamut can reach 105 percent at most, and the perovskite quantum dot film can be applied to the liquid crystal display with wide color gamut, high brightness and high stability.
Drawings
Fig. 1 is a schematic structural diagram of a perovskite quantum dot film.
FIG. 2 is a graph of the performance test results of perovskite quantum dot films.
In the figure: 1. the quantum dot layer comprises a first water resisting layer, 2, a first oxygen resisting layer, 3, a quantum dot layer, 4, a second oxygen resisting layer, 5 and a second water resisting layer.
Detailed Description
The present invention will be specifically described below with reference to the drawings and specific examples, and for convenience of explanation, the fluorescence emission peak is represented by PL, the fluorescence quantum efficiency is represented by PL QY, and the full width at half maximum is represented by FWHM.
Example 1: preparation method of perovskite quantum dot film
1) Preparation of perovskite quantum dot polymer particles
4.0mmol of PbBr2Oleic acid (32mmol) and oleylamine (32mmol) were charged into a 10L stirred tank and dried under vacuum at 120 ℃ for 30min to remove water from the starting material. The resulting mixture was heated to 150 ℃ under nitrogen blanket until PbBr2And completely dissolving. The temperature was then raised to 180 ℃ and 4kg of the thermoplastic elastomer SEBS G1657M was added, after complete melting, 0.16mmol of cesium oleate precursor was injected. Then respectively stirring 0.1kg of titanium dioxide diffusion particles and 0.01kg of antioxidant 1010 fully, adding the uniformly mixed product into a double-screw extruder after vacuum defoamation, and cooling and granulating the extruded product to obtain the required perovskite quantum dot polymer particles;
2) preparation of perovskite quantum dot film
Respectively adding PP particles, EVOH particles and perovskite quantum dot polymer particles prepared in the step 1), EVOH particles and PP particles into an extruder A, an extruder B, an extruder C, an extruder D and an extruder E through a vacuum feeding system to respectively obtain a first water-blocking PP layer 1, a first oxygen-blocking layer 2, a quantum dot layer 3, a second oxygen-blocking layer 4 and a second water-blocking PP layer 5, setting the layer ratio to be 25%: 15%: 20%: 15%: 25%, extruding through an extruder of a casting machine, and combining the layers through a die head distributor of the casting machine. The perovskite quantum dot film can be obtained, and the total thickness of the perovskite quantum dot film is 50 um.
Example 2: preparation method of perovskite quantum dot film
1) Preparation of perovskite quantum dot polymer particles
4.0mmol of PbBr2, oleic acid (32mmol) and oleylamine (32mmol) were charged into a 10L stirred tank and vacuum-dried at 120 ℃ for 30min to remove water from the starting material. The resulting mixture was heated to 150 ℃ under nitrogen blanket until PbBr2 was completely dissolved. And then, heating to 180 ℃, adding 4kg of acrylic block copolymer LA2330, and after the acrylic block copolymer LA2330 is completely melted, injecting 0.16mmol of cesium oleate precursor. Then respectively adding 0.1kg of titanium dioxide diffusion particles and 0.01kg of antioxidant 1010, fully stirring, carrying out vacuum defoamation on the uniformly mixed product, adding the product into a double-screw extruder, and cooling and granulating the extruded product to obtain the required perovskite quantum dot polymer particles;
2) preparation of perovskite quantum dot film
Respectively adding PP particles, EVOH particles and perovskite quantum dot polymer particles prepared in the step 1), EVOH particles and PP particles into an extruder A, an extruder B, an extruder C, an extruder D and an extruder E through a vacuum feeding system, setting the layer ratio of 30% to 10% to 20% to 10% to 30% through the extruder of a casting machine, and combining the materials through a die head distributor of the casting machine to obtain the perovskite quantum dot film, wherein the total thickness of the perovskite quantum dot film is 50 microns.
Example 3: preparation method of perovskite quantum dot film
Example 1 was repeated with the only difference that in step 1) the preparation of the perovskite quantum dot polymer particles the thermoplastic elastomer was EVA, with the designation Levamelt @ 686.
Example 4: a preparation method of a perovskite quantum dot film comprises the following steps:
example 1 was repeated except that the antioxidant 1010 was added in an amount of 0.02Kg only in the preparation of the perovskite quantum dot polymer particles of step 1).
Example 5: preparation method of perovskite quantum dot film
Example 2 was repeated except that the amount of the acrylic block copolymer LA2330 added was 8Kg only in the preparation of the perovskite quantum dot polymer particles of step 1). And step 2) in the preparation of the perovskite quantum dot film, the total thickness of the perovskite quantum dot film is 100 um.
Example 6: preparation method of perovskite quantum dot film
Example 1 was repeated, except that only in the preparation of the perovskite quantum dot polymer particles of step 1), the amount of SEBS G1657M added was 3.2 Kg. Step 2) in the preparation of the perovskite quantum dot film, the total thickness of the perovskite quantum dot film is 40 um;
example 7: preparation method of perovskite quantum dot film
Example 2 was repeated except that the amount of the acrylic block copolymer LA2330 added was 3.2Kg only in the preparation of the perovskite quantum dot polymer particles of step 1). Step 2) in the preparation of the perovskite quantum dot film, the total thickness of the perovskite quantum dot film is 40 um;
testing visible light transmittance and haze:
the perovskite quantum dot films prepared in examples 1, 2, 3, 4, 5, 6, and 7 were tested for visible light transmittance and haze. After testing 6 samples in parallel for each example, the results were averaged to obtain visible light transmission and haze. The results of the visible light transmittance and haze measurements for each example sample are shown in detail in fig. 2.
Fluorescence property test:
PL, FWHM, PLQY of the perovskite quantum dot films prepared in examples 1, 2, 3, 4, 5, 6, 7 were tested at an excitation wavelength of 450 nm. After testing 6 samples in parallel for each example, the test results were averaged to obtain the final result. The results of PL, FWHM, PLQY testing for each example sample are detailed in fig. 2.
High temperature and high humidity aging test:
after aging each perovskite quantum dot film sample in an aging oven with 60 ℃ and 90% relative humidity for 1000 hours, PLQY of each sample is measured under the specific wavelength of 450 nm. After testing 6 samples in parallel in each example, the test results were averaged to obtain the fluorescence efficiency of the film after high temperature, high humidity and aging. The results of the high temperature, high humidity aging test of the samples of each example are shown in detail in fig. 2.
And (3) photo aging test:
and aging each perovskite quantum dot film sample in a blue light aging box at 45 ℃ for 1000 hours, and measuring the PLQY of each sample at a specific wavelength of 450 nm. After testing 6 samples in parallel in each example, the test results were averaged to obtain the fluorescence efficiency of the film after light aging. The results of the light aging test for each example sample are shown in detail in fig. 2.
NTSC color gamut test:
the NTSC color gamut of the LCD prototype containing the perovskite quantum dot film was measured using a display color analyzer (model: CA 310) at room temperature. After testing 6 samples in parallel for each example, the results were averaged to obtain the NTSC color gamut. The NTSC color gamut test results for the example samples are shown in particular in fig. 2.
Experimental results show that the perovskite quantum dot polymer particles are prepared by using the thermoplastic elastomer as the dispersing agent and using a high-temperature hot injection method, complicated centrifugation, separation and redispersion are not needed, the perovskite quantum dot polymer particles and other polymers are directly co-extruded to obtain the perovskite quantum dot film, the process is simple, the practical efficiency is improved, and meanwhile the optical performance and stability of the perovskite quantum dots can be ensured. The invention adopts the optical-grade polymer PP oxygen-resistant layer and the EVOH water-resistant layer, and can ensure the stability of the perovskite quantum dots without using an expensive high-barrier PET film with the surface plated with oxide. The perovskite quantum dot film prepared by adopting a multilayer co-extrusion method has the total thickness of 40um, and meets the requirement of ultrathin liquid crystal display screens such as mobile phones and flat panels on the thickness of the quantum dot film. The perovskite quantum dot film PLQY prepared by the method is up to 90-95%, and the half-peak width is as narrow as 25 nm. In addition, the prepared perovskite quantum dot film has ultrahigh light stability and high-temperature high-humidity stability, and the fluorescence efficiency of the perovskite quantum dot film is not obviously reduced after the film is aged for 1000 hours at the blue light temperature of 45 ℃ and aged for 1000 hours at the temperature of 60 ℃ and 90% RH. The perovskite quantum dot film prepared by the invention is used as a down-conversion fluorescent material of a backlight module of a liquid crystal display, the NTSC color gamut can reach 105 percent at most, and the perovskite quantum dot film can be applied to the liquid crystal display with wide color gamut, high brightness and high stability.
The foregoing illustrates and describes the principles, general features, and advantages of the present invention. It should be understood by those skilled in the art that the above embodiments do not limit the present invention in any way, and all technical solutions obtained by using equivalent alternatives or equivalent variations fall within the scope of the present invention.

Claims (6)

1. The preparation method of the perovskite quantum dot film is characterized by comprising the following steps:
1) preparation of perovskite quantum dot polymer particles:
mixing the raw materials in a molar ratio of 1:8: 13, adding the metal halide A, oleic acid and oleylamine into a stirring tank, drying in vacuum at 120 ℃ for 30 minutes to remove moisture in raw materials, heating the obtained mixture to 150 ℃ under the protection of nitrogen until the metal halide is completely dissolved, then heating to 160-220 ℃, adding a thermoplastic elastomer, after the mixture is completely melted, rapidly injecting a certain amount of precursor B under vigorous stirring, and keeping the molar ratio of the metal halide A to the precursor B to be 1: 0.4, then respectively adding the diffusion particles and the antioxidant, fully stirring, adding the uniformly mixed product into a double-screw extruder after vacuum defoamation, and cooling and granulating the extruded product to obtain the required perovskite quantum dot polymer particles;
2) preparing a perovskite quantum dot film:
respectively adding PP particles, EVOH particles and the perovskite quantum dot polymer particles prepared in the step 1), EVOH particles and PP particles into an extruder A, an extruder B, an extruder C, an extruder D and an extruder E through a vacuum feeding system, and extruding the mixture into a film through a multi-layer co-extrusion casting machine to obtain the required perovskite quantum dot film.
2. The method for producing a perovskite quantum dot film according to claim 1, characterized in that: the softening temperature of the thermoplastic elastomer in the step 1) is 120-220 ℃.
3. The method for producing a perovskite quantum dot film according to claim 1, characterized in that: the thermoplastic elastomer is one or a mixture of SEBS thermoplastic elastomer, EVA thermoplastic elastomer, TPU thermoplastic elastomer and acrylic block copolymer.
4. The method of preparing a perovskite quantum dot film according to claim 1, wherein: in the step 1), the metal cation of the metal halide A is Pb2+、Sn2+、Sb2+、Bi2+、Ag+、Zn2+、Mn2+、Cu2+Or Ge+One or more of (a).
5. The method of preparing a perovskite quantum dot film according to claim 1, wherein: in the step 1), the halogen element is Cl-、Br-、I-One or more of (a).
6. The method of preparing a perovskite quantum dot film according to claim 1, wherein: in the step 1), the precursor B is metal cation or oleate of positively charged organic cation, and the precursor B is Cs+、Rb+、FA+(HN=CH-NH3+) One or more of the oleates of (a).
CN202011030093.4A 2020-09-27 2020-09-27 Preparation method of perovskite quantum dot film Pending CN112109410A (en)

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CN107611190A (en) * 2017-09-18 2018-01-19 南昌大学 A kind of perovskite solar cell resistant to bending and preparation method
CN108128004A (en) * 2018-01-08 2018-06-08 惠州市创亿达新材料有限公司 Perovskite quantum dot optics feature board and preparation method thereof
CN111621287A (en) * 2020-05-27 2020-09-04 华中科技大学 Quantum dot polymer composite membrane and preparation method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107102384A (en) * 2017-04-24 2017-08-29 宁波东旭成新材料科技有限公司 A kind of quantum dot optical film
CN107611190A (en) * 2017-09-18 2018-01-19 南昌大学 A kind of perovskite solar cell resistant to bending and preparation method
CN108128004A (en) * 2018-01-08 2018-06-08 惠州市创亿达新材料有限公司 Perovskite quantum dot optics feature board and preparation method thereof
CN111621287A (en) * 2020-05-27 2020-09-04 华中科技大学 Quantum dot polymer composite membrane and preparation method thereof

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Application publication date: 20201222