CN112103371A - Silicon chip paster removing method based on oil magnetic particle separation technology - Google Patents
Silicon chip paster removing method based on oil magnetic particle separation technology Download PDFInfo
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- CN112103371A CN112103371A CN202010926461.7A CN202010926461A CN112103371A CN 112103371 A CN112103371 A CN 112103371A CN 202010926461 A CN202010926461 A CN 202010926461A CN 112103371 A CN112103371 A CN 112103371A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 91
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 90
- 239000010703 silicon Substances 0.000 title claims abstract description 90
- 238000000926 separation method Methods 0.000 title claims abstract description 61
- 239000003921 oil Substances 0.000 title claims abstract description 59
- 238000000034 method Methods 0.000 title claims abstract description 23
- 238000005516 engineering process Methods 0.000 title claims abstract description 16
- 239000006249 magnetic particle Substances 0.000 title claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 72
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims abstract description 62
- 230000008859 change Effects 0.000 claims abstract description 43
- 238000002791 soaking Methods 0.000 claims abstract description 33
- 239000007788 liquid Substances 0.000 claims abstract description 11
- 238000003860 storage Methods 0.000 claims description 45
- 229910001285 shape-memory alloy Inorganic materials 0.000 claims description 33
- 238000005253 cladding Methods 0.000 claims description 26
- NKWPZUCBCARRDP-UHFFFAOYSA-L calcium bicarbonate Chemical compound [Ca+2].OC([O-])=O.OC([O-])=O NKWPZUCBCARRDP-UHFFFAOYSA-L 0.000 claims description 20
- 229910000020 calcium bicarbonate Inorganic materials 0.000 claims description 20
- 239000000843 powder Substances 0.000 claims description 20
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 12
- 239000012085 test solution Substances 0.000 claims description 11
- 239000003153 chemical reaction reagent Substances 0.000 claims description 10
- 238000001514 detection method Methods 0.000 claims description 10
- 238000007789 sealing Methods 0.000 claims description 9
- 239000000243 solution Substances 0.000 claims description 9
- 239000012528 membrane Substances 0.000 claims description 8
- HZEWFHLRYVTOIW-UHFFFAOYSA-N [Ti].[Ni] Chemical compound [Ti].[Ni] HZEWFHLRYVTOIW-UHFFFAOYSA-N 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 7
- 229910001000 nickel titanium Inorganic materials 0.000 claims description 7
- 239000011259 mixed solution Substances 0.000 claims description 6
- 238000003756 stirring Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 4
- 239000008213 purified water Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 230000005389 magnetism Effects 0.000 claims description 3
- 238000007781 pre-processing Methods 0.000 claims description 3
- 230000001737 promoting effect Effects 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 1
- 230000009471 action Effects 0.000 abstract description 8
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 32
- 235000012431 wafers Nutrition 0.000 description 31
- 229910002092 carbon dioxide Inorganic materials 0.000 description 16
- 239000001569 carbon dioxide Substances 0.000 description 16
- 230000000694 effects Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000001125 extrusion Methods 0.000 description 4
- 239000003292 glue Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000003749 cleanliness Effects 0.000 description 3
- 238000007790 scraping Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 235000013339 cereals Nutrition 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000006247 magnetic powder Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 230000007306 turnover Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention discloses a silicon chip paster removing method based on oil magnetic particle separation technology, belonging to the technical field of semiconductor silicon chips, the scheme can promote an oil magnetic thermal change guide rope to be recovered to a high temperature phase state through heat in a hot soaking liquid, meanwhile, the paster and the semiconductor silicon chip can be effectively separated by means of the movement and deformation of a conical separation sheet and the oil magnetic thermal change guide rope under the reset action of an elastic reset rope by means of the mutual distance between magnetic traction balls, the viscosity between the paster and the semiconductor silicon chip can be reduced by means of the release of acetone, simultaneously, the acetone can be promoted to be enriched on the surface of the oil magnetic thermal change guide rope by means of the hydrophilicity on the surface of the oil magnetic thermal change guide rope, and the acetone can be promoted to be uniformly distributed between the paster and the semiconductor silicon chip along with the movement of the oil magnetic thermal change guide rope, thereby improving the separation efficiency of the patch.
Description
Technical Field
The invention relates to the technical field of semiconductor silicon wafers, in particular to a silicon wafer paster removing method based on an oil magnetic particle separation technology.
Background
The semiconductor refers to a material with electric conductivity between a conductor and an insulator at normal temperature, and has applications in the fields of integrated circuits, consumer electronics, communication systems, photovoltaic power generation, lighting, high-power conversion and the like, for example, a diode is a device made of a semiconductor, and the importance of the semiconductor is very great from the viewpoint of science and technology or economic development, most electronic products, such as computers, mobile phones or digital recorders, have close relationship with the semiconductor, common semiconductor materials include silicon, germanium, gallium arsenide and the like, and silicon is one of the most influential applications of various semiconductor materials.
On a silicon chip with large grains of rice, 16 ten thousand transistors can be integrated, which is another milestone of scientific and technical progress, and the earth crust contains 25.8 percent of silicon element, thereby providing an inexhaustible source for the production of monocrystalline silicon. Since silicon is one of the most abundant elements in the earth's crust, the reserve advantage is also one of the reasons that silicon is the main material for photovoltaics for solar cells, such as those products destined for large-scale market.
The traditional degumming process is generally operated manually, the process is to soak the silicon wafer in a hot water tank with the temperature of more than 40 ℃ for 50-130min, but insufficient degumming phenomenon may occur in manual treatment, meanwhile, the operation of staff is difficult to regulate, the randomness is strong, and different degrees are caused to the surface and the integrity of the silicon wafer.
Disclosure of Invention
1. Technical problem to be solved
Aiming at the problems in the prior art, the invention aims to provide a silicon wafer paster removing method based on an oil magnetic particle separation technology, the scheme can promote an oil magnetic thermal change guide rope to restore to a high-temperature phase state through heat in hot soaking liquid, promote the oil magnetic thermal change guide rope to deform to a position between a paster and a semiconductor silicon wafer, meanwhile, by means of mutual separation between magnetic traction balls, a built-in storage bag can be forced to deform from an ellipsoid shape to a spherical shape under the reset action of an elastic reset rope, so that acetone in the built-in storage bag is released from a release circular hole under the extrusion action, on one hand, the paster and the semiconductor silicon wafer can be effectively separated by means of movement and deformation of a conical separation sheet and the oil magnetic thermal change guide rope, on the other hand, the viscosity between the paster and the semiconductor silicon wafer can be greatly reduced by means of the release of the acetone, and on the other hand, by means of the hydrophilicity on the surface of, the acetone can be promoted to be enriched on the surface of the oil magnetic thermal change guide rope, and can be promoted to be uniformly distributed between the paster and the semiconductor silicon chip along with the movement of the oil magnetic thermal change guide rope, so that the separation efficiency of the paster is improved.
2. Technical scheme
In order to solve the above problems, the present invention adopts the following technical solutions.
A silicon chip paster removing method based on an oil magnetic particle separation technology comprises the following steps:
s1, preprocessing the semiconductor silicon wafer pasted with the patch, forming a circle of wedge-shaped groove on the surface of the patch, and respectively clamping the two gate-shaped degumming frames in the wedge-shaped groove to form a soaking sheet;
s2, preparing a part of hot soaking liquid, adding a detection reagent into the hot soaking liquid, stirring uniformly, heating the mixed solution to 40 ℃, putting a plurality of soaking pieces into the mixed solution, and stirring to uniformly distribute the soaking pieces;
and S3, soaking the soaked piece for 50min, taking out, buckling the outer door-shaped degumming frame out, promoting the separation of the paster and the semiconductor silicon chip, and wiping the semiconductor silicon chip by means of the door-shaped degumming frame, thereby completing the removal of the paster.
Further, the outer end of the door-shaped degumming frame in S1 is fixedly connected with an outer storage bag frame, two oil magnetic thermal change guide ropes which are symmetrical to each other and penetrate through the door-shaped degumming frame are embedded in the outer storage bag frame, one ends of the two oil magnetic thermal change guide ropes, which are close to each other, are fixedly connected with conical separation sheets, internal storage bags are embedded in the conical separation sheets, fixed end sheets are embedded in the internal storage bags, the inner walls of the internal storage bags are fixedly connected with magnetic traction balls, the two magnetic traction balls attract each other, elastic return ropes are fixedly connected between the fixed end sheets and the magnetic traction balls, a plurality of uniformly distributed release circular holes are drilled at the outer end of the internal storage bags, the inner walls of the release circular holes are fixedly connected with a pair of rubber sealing sheets which are tightly pressed against each other, and the oil magnetic thermal change guide ropes can be restored to a high-phase state by heat in the hot dipping liquid, the deformation is promoted to be between the paster and the semiconductor silicon chip, and the mutual distance between the magnetic traction balls is utilized, so that the built-in storage bag can be forced to deform from an ellipsoid shape to a spherical shape under the reset action of the elastic reset rope, the acetone in the built-in storage bag is released from the release round hole under the extrusion action, on one hand, the paster and the semiconductor silicon chip can be effectively separated by means of the movement and deformation of the conical separation sheet and the oil magnetic thermal change guide rope, on the other hand, the viscosity between the paster and the semiconductor silicon chip is greatly reduced by means of the release of the acetone, and simultaneously, the acetone can be enriched on the surface of the oil magnetic thermal change guide rope by means of the hydrophilicity on the surface of the oil magnetic thermal change guide rope, and the acetone can be uniformly distributed between the paster and the semiconductor silicon chip along with the movement of the oil magnetic thermal change guide rope, so that the separation efficiency of the paster;
in addition, after the soaking piece is taken out, the door-shaped glue removing frame can be taken out from between the surface mounted piece and the semiconductor silicon chip, the surface mounted piece is pulled and separated from the semiconductor silicon chip by means of the oil magnetic thermal change guide rope and the conical separation piece which are embedded between the semiconductor silicon chip and the surface mounted piece, and meanwhile, the residual glue area can be scraped by means of the scraping effect of the oil magnetic thermal change guide rope and the conical separation piece, so that the cleanliness of the surface of the semiconductor silicon chip is improved, and the removal efficiency of the surface mounted piece is improved.
Furthermore, the oil magnetic thermal change guide rope comprises an internal guide pipe communicated with an external storage package frame, a plurality of uniformly distributed air diffusion round holes are drilled at the outer end of the internal guide pipe, a memory alloy cladding is fixedly connected at the outer end of the internal guide pipe, a plurality of uniformly distributed reducing iron powders are embedded in the memory alloy cladding, a large amount of carbon dioxide gas can be generated by thermal decomposition of calcium bicarbonate powder in the external storage package frame and is released between the semiconductor silicon wafer and the patch by virtue of the air diffusion round holes, so that the gap between the semiconductor silicon wafer and the patch is improved, and meanwhile, by virtue of the characteristic that the memory alloy cladding recovers to a high-temperature phase state after the temperature is raised, the reducing iron powders can be blown out together along with the carbon dioxide gas, on one hand, the gap between the patch and the semiconductor silicon wafer can be supported, so that the possibility of bonding the patch and the semiconductor silicon wafer, on the other hand, the heat release characteristic of the contact between the reducing iron powder and the air can be utilized, and the separation efficiency of the paster and the semiconductor silicon wafer can be improved by means of heat when the paster is pulled and separated.
Further, the detection reagent in the S2 is prepared from purple litmus test solution, the hot soaking solution in the S2 is prepared from purified water, the mixing ratio of the purple litmus test solution to the hot soaking solution is 1:80, and the purple litmus test solution is used for preparing the detection reagent, so that carbon dioxide generated in the soaking piece can be detected in the separation process of the soaking piece, and the reaction process can be timely controlled.
Further, it is filled with calcium bicarbonate powder to deposit outward the package frame intussuseption, deposit outward the waterproof ventilated membrane of package frame inner wall fixedly connected with, waterproof ventilated membrane is located calcium bicarbonate powder right side, through setting up calcium bicarbonate powder, can make calcium bicarbonate powder be heated and to produce a large amount of carbon dioxide gas after decomposing to can improve the separation efficiency between semiconductor silicon chip and the paster with the help of its release, can reduce partial calcium bicarbonate with the help of waterproof ventilated membrane and follow the carbon dioxide and get into the possibility to built-in pipe.
Furthermore, toper separator includes the sponge end tail with oily magnetism heat altered lead rope fixed connection, toper separator bottom end fixed connection has the metal conical head, through setting up sponge end tail, can make from built-in storage bag release acetone can distribute more evenly.
Furthermore, the built-in storage bag is filled with acetone, and the viscosity between the semiconductor silicon chip and the patch can be reduced by arranging the acetone, so that the separation efficiency between the semiconductor silicon chip and the patch is improved.
Furthermore, the outer end of the elastic reset rope is fixedly connected with a plurality of connection pull ropes which are uniformly distributed and have the same number with the release round holes, each connection pull rope is fixedly connected with the corresponding rubber sealing piece which is positioned on the upper side, the connection pull ropes are arranged, so that the rubber sealing pieces can be inwards turned in the reset process of the elastic reset rope, and the release efficiency of acetone in the built-in storage bag is improved.
Furthermore, the memory alloy cladding is made of nickel-titanium memory alloy materials, the equilibrium temperature of the memory alloy cladding is 40 ℃, and the memory alloy cladding made of the nickel-titanium memory alloy materials can promote the memory alloy cladding to recover to a high-temperature phase state after the temperature rises, so that the whole oil magnetic thermal change guide rope is driven to deform and move.
3. Advantageous effects
Compared with the prior art, the invention has the advantages that:
(1) the scheme can promote the oil magnetic thermal change guide rope to recover to a high temperature phase state and to deform between the patch and the semiconductor silicon wafer by heat in the hot soaking liquid, meanwhile, the built-in storage bag can be forced to deform from an ellipsoid shape to a spherical shape under the reset action of the elastic restoring rope by means of mutual separation between the magnetic traction balls, so that acetone in the built-in storage bag is released from the release circular hole by means of the extrusion action, on one hand, the patch can be effectively separated from the semiconductor silicon wafer by means of the movement and deformation of the conical separation sheet and the oil magnetic thermal change guide rope, on the other hand, the thermal viscosity between the patch and the semiconductor silicon wafer is greatly reduced by means of the release of the acetone, and on the other hand, the acetone can be promoted to be enriched on the surface of the oil magnetic thermal change guide rope by means of the hydrophilicity of the surface of the oil magnetic thermal change guide rope, and the acetone can be uniformly distributed between the patch and the semiconductor silicon wafer along with the movement, thereby improving the separation efficiency of the patch.
(2) After the soaking piece is taken out, the door-shaped glue removing frame can be taken out from between the paster and the semiconductor silicon chip, the paster is pulled and separated from the semiconductor silicon chip by means of the oil magnetic thermal change guide rope and the conical separation piece which are embedded between the semiconductor silicon chip and the paster, and meanwhile, the residual glue area can be scraped by means of the scraping effect of the oil magnetic thermal change guide rope and the conical separation piece, so that the cleanliness of the surface of the semiconductor silicon chip is improved, and the removal efficiency of the paster is improved.
(3) The oil-magnetic thermal change guide rope comprises an internal guide pipe communicated with an external storage bag frame, a plurality of uniformly distributed air-diffusing round holes are drilled at the outer end of the internal guide pipe, a memory alloy cladding is fixedly connected at the outer end of the internal guide pipe, a plurality of uniformly distributed reducing iron powder is embedded in the memory alloy cladding, the calcium bicarbonate powder in the external storage bag frame is heated and decomposed to generate a large amount of carbon dioxide gas and is released between a semiconductor silicon wafer and a paster by the aid of the air-diffusing round holes, so that the gap between the semiconductor silicon wafer and the paster is improved, and simultaneously, the reducing iron powder can be blown out along with the carbon dioxide gas by virtue of the characteristic that the temperature of the memory alloy cladding is increased and then is recovered to a high-temperature phase state, on one hand, the gap between the paster and the semiconductor silicon wafer can be supported, so that the possibility of bonding the paster and the semiconductor silicon wafer together, when the paster is pulled and separated, the separation efficiency of the paster and the semiconductor silicon wafer can be improved by means of heat.
(4) The detection reagent in S2 is prepared from purple litmus test solution, the hot soak solution in S2 is prepared from purified water, the mixing ratio of the purple litmus test solution to the hot soak solution is 1:80, and the purple litmus test solution is used for preparing the detection reagent, so that carbon dioxide generated in the soaking piece can be detected in the separation process of the soaking piece, and the reaction process can be timely controlled.
(5) Deposit outward and wrap the intussuseption and be filled with calcium bicarbonate powder, deposit outward and wrap the waterproof ventilated membrane of frame inner wall fixedly connected with, waterproof ventilated membrane is located the last right side of calcium bicarbonate powder, through setting up calcium bicarbonate powder, can make calcium bicarbonate powder be heated and can produce a large amount of carbon dioxide gas after decomposing to can improve the separation efficiency between semiconductor silicon chip and the paster with the help of its release, can reduce partial calcium bicarbonate with the help of waterproof ventilated membrane and follow the carbon dioxide and enter into the possibility to built-in pipe.
(6) The toper separator includes with oily magnetism heat altered lead rope fixed connection's sponge end tail, toper separator bottom end fixedly connected with metal conical head, through setting up sponge end tail, can make from built-in storage bag release acetone can distribute more even.
(7) The built-in storage bag is filled with acetone, and the viscosity between the semiconductor silicon chip and the patch can be reduced by arranging the acetone, so that the separation efficiency between the semiconductor silicon chip and the patch is improved.
(8) The elastic reset rope outer end fixedly connected with a plurality of evenly distributed and with release the same connection stay cord of round hole quantity, every connection stay cord all rather than the corresponding rubber mounting fixed connection who is located the upside, through setting up the connection stay cord, can make the rubber mounting inwards turn over at the in-process that the elastic reset rope resets to this release efficiency that improves the acetone in the built-in storage bag.
(9) The memory alloy cladding is made of nickel-titanium memory alloy materials, the equilibrium temperature of the memory alloy cladding is 40 ℃, and the memory alloy cladding made of the nickel-titanium memory alloy materials can promote the memory alloy cladding to recover to a high-temperature phase state after the temperature rises, so that the whole oil magnetic thermal change guide rope is driven to deform and move.
Drawings
FIG. 1 is a dynamic perspective view of a silicon wafer de-bonding process of the present invention;
FIG. 2 is a dynamic cross-sectional view of the door-shaped frame of the present invention;
FIG. 3 is a cross-sectional view of a tapered separator segment according to the invention;
FIG. 4 is a cross-sectional view of a portion of the internal storage bladder of the present invention;
FIG. 5 is a cross-sectional view of a deformed internal storage bladder of the present invention;
fig. 6 is a cross-sectional view of a thermally variable leader portion of the present invention.
The reference numbers in the figures illustrate:
the device comprises a 1-door-shaped degumming frame, a 2-external storage frame, 201 calcium bicarbonate powder, a 202-waterproof breathable film, a 3-oil magnetic thermal change guide rope, a 4-cone separation sheet, a 401-metal cone, a 402-sponge end tail, a 5-built storage bag, a 6-fixed end sheet, a 7-magnetic traction ball, an 8-elastic reset rope, a 801-connection pull rope, a 9-release round hole, a 10-rubber sealing sheet, a 11-built catheter, a 1101-external expansion steel wire rope, 1102-tip magnetic powder, a 12-air-dispersing round hole, a 13-memory alloy cladding and 14-reducing iron powder.
Detailed Description
The drawings in the embodiments of the invention will be combined; the technical scheme in the embodiment of the invention is clearly and completely described; obviously; the described embodiments are only some of the embodiments of the invention; but not all embodiments, are based on the embodiments of the invention; all other embodiments obtained by a person skilled in the art without making any inventive step; all fall within the scope of protection of the present invention.
In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "outer", "top/bottom", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "disposed," "sleeved/connected," "connected," and the like are to be construed broadly, e.g., "connected," which may be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Example 1:
referring to fig. 1, a method for removing a silicon chip patch based on an oil magnetic particle separation technique includes the following steps:
s1, preprocessing the semiconductor silicon wafer pasted with the patch, forming a circle of wedge-shaped groove on the surface of the patch, and respectively clamping the two gate-shaped degumming frames 1 in the wedge-shaped groove to form a soaking sheet;
s2, preparing a part of hot soaking liquid, adding a detection reagent into the hot soaking liquid, stirring uniformly, heating the mixed solution to 40 ℃, putting a plurality of soaking pieces into the mixed solution, and stirring to uniformly distribute the soaking pieces;
and S3, soaking the soaked piece for 50min, taking out, buckling the outer door-shaped degumming frame 1 out, promoting the separation of the paster and the semiconductor silicon chip, and wiping the semiconductor silicon chip by means of the door-shaped degumming frame 1, thereby completing the removal of the paster.
Referring to fig. 2-5, an outer end of a door-shaped degumming frame 1 in S1 is fixedly connected with an outer storage bag frame 2, two oil magnetic thermal change guide ropes 3 which are symmetrical to each other and penetrate through the door-shaped degumming frame 1 are embedded in the outer storage bag frame 2, one ends of the two oil magnetic thermal change guide ropes 3, which are close to each other, are fixedly connected with conical separation sheets 4, internal storage bags 5 are embedded in the conical separation sheets 4, fixed end pieces 6 are embedded in the internal storage bags 5, magnetic traction balls 7 are fixedly connected to the inner walls of the internal storage bags 5, the two magnetic traction balls 7 attract each other, elastic return ropes 8 are fixedly connected between the fixed end pieces 6 and the magnetic traction balls 7, a plurality of uniformly distributed release circular holes 9 are drilled at the outer end of the internal storage bags 5, a pair of rubber sealing sheets 10 which are tightly abutted to each other are fixedly connected to the inner walls of the release circular holes 9, and the oil magnetic thermal change guide ropes 3 can be restored to a high temperature phase state by heat in a thermal soaking liquid, and the deformation is promoted to be between the paster and the semiconductor silicon chip, and simultaneously, by means of the mutual separation of the magnetic traction balls 7, can force the built-in storage capsule 5 to deform from an ellipsoid shape to a sphere shape under the reset action of the elastic reset rope 8, thereby releasing the acetone in the release round hole 9 by the extrusion effect, on one hand, by the movement and deformation of the conical separation sheet 4 and the oil magnetic thermal change guide rope 3, can effectively separate the paster from the semiconductor silicon chip, on the other hand, the stickiness between the paster and the semiconductor silicon chip is greatly reduced by the release of acetone, meanwhile, the surface of the oil magnetic thermal change guide rope 3 has hydrophilicity, so that acetone can be promoted to be enriched on the surface of the oil magnetic thermal change guide rope 3, the acetone can be promoted to be uniformly distributed between the paster and the semiconductor silicon chip along with the movement of the oil magnetic thermal change guide rope 3, so that the separation efficiency of the paster is improved;
in addition, after the soaking piece is taken out, the door-shaped degumming frame 1 can be taken out from between the paster and the semiconductor silicon chip, the paster is pulled and separated from the semiconductor silicon chip by means of the oil magnetic thermal change guide rope 3 and the conical separation piece 4 which are embedded between the semiconductor silicon chip and the paster, and meanwhile, the residual gluing area can be scraped by means of the scraping effect of the oil magnetic thermal change guide rope 3 and the conical separation piece 4, so that the cleanliness of the surface of the semiconductor silicon chip is improved, and the removal efficiency of the paster is improved.
Referring to fig. 6, the oil magnetic thermal change guide rope 3 includes an inner conduit 11 communicated with the outer containment frame 2, a plurality of uniformly distributed gas diffusion circular holes 12 are cut at the outer end of the inner conduit 11, a memory alloy cladding 13 is fixedly connected to the outer end of the inner conduit 11, a plurality of uniformly distributed reducing iron powder 14 are embedded in the memory alloy cladding 13, the calcium bicarbonate powder 201 in the outer containment frame 2 is heated and decomposed to generate a large amount of carbon dioxide gas, and the carbon dioxide gas is released between the semiconductor silicon wafer and the chip through the gas diffusion circular holes 12 to improve the gap between the semiconductor silicon wafer and the chip, and the reducing iron powder 14 is blown out together with the carbon dioxide gas by virtue of the characteristic that the temperature of the memory alloy cladding 13 is raised and then returns to the high-temperature phase state, on one hand, the gap between the chip and the semiconductor silicon wafer can be supported, thereby reducing the possibility of bonding the chip and the semiconductor silicon wafer together again, on the other hand, the heat release characteristic caused by the contact of the reduced iron powder 14 and the air can be utilized, so that the separation efficiency of the paster and the semiconductor silicon wafer can be improved by means of heat when the paster is pulled and separated.
The detection reagent in S2 is prepared from purple litmus test solution, the hot soak solution in S2 is prepared from purified water, the mixing ratio of the purple litmus test solution to the hot soak solution is 1:80, and the purple litmus test solution is used for preparing the detection reagent, so that carbon dioxide generated in the soaking piece can be detected in the separation process of the soaking piece, and the reaction process can be timely controlled.
Referring to fig. 2-3, the outer storage frame 2 is filled with calcium bicarbonate powder 201, the inner wall of the outer storage frame 2 is fixedly connected with a waterproof breathable film 202, the waterproof breathable film 202 is located on the right side of the calcium bicarbonate powder 201, the calcium bicarbonate powder 201 can be promoted to be heated and decomposed to generate a large amount of carbon dioxide gas, the separation efficiency between a semiconductor silicon wafer and a patch can be improved by virtue of the release of the waterproof breathable film 202, the possibility that part of calcium bicarbonate enters the built-in conduit 11 along with carbon dioxide can be reduced by virtue of the waterproof breathable film 202, the conical separation sheet 4 comprises a sponge end tail 402 fixedly connected with the oil magnetic thermal change guide rope 3, the bottom end of the conical separation sheet 4 is fixedly connected with a metal cone 401, and the acetone released from the built-in storage bag 5 can be promoted to be distributed more uniformly by virtue of the sponge end tail 402.
Referring to fig. 4-6, the built-in storage bag 5 is filled with acetone, the acetone is arranged to reduce the viscosity between the semiconductor silicon chip and the patch, so as to improve the separation efficiency between the semiconductor silicon chip and the patch, the outer end of the elastic reset rope 8 is fixedly connected with a plurality of connecting pull ropes 801 which are uniformly distributed and have the same number as the number of the releasing circular holes 9, each connecting pull rope 801 is fixedly connected with the corresponding rubber sealing piece 10 which is positioned at the upper side, the connecting pull ropes 801 are arranged to cause the rubber sealing pieces 10 to turn inwards in the process of resetting the elastic reset rope 8, so as to improve the release efficiency of the acetone in the built-in storage bag 5, the memory alloy cladding 13 is made of nickel-titanium memory alloy material, the equilibrium temperature of the memory alloy cladding 13 is 40 ℃, the memory alloy cladding 13 is made of nickel-titanium memory alloy material, so as to cause the memory alloy cladding 13 to recover to its high-temperature phase state after the temperature rises, thereby driving the whole oil magnetic thermal change guide rope 3 to deform and move.
The above; but are merely preferred embodiments of the invention; the scope of the invention is not limited thereto; any person skilled in the art is within the technical scope of the present disclosure; the technical scheme and the improved concept of the invention are equally replaced or changed; are intended to be covered by the scope of the present invention.
Claims (9)
1. A silicon chip paster removing method based on an oil magnetic particle separation technology is characterized by comprising the following steps: the method comprises the following steps:
s1, preprocessing the semiconductor silicon wafer pasted with the patch, forming a circle of wedge-shaped groove on the surface of the patch, and respectively clamping the two gate-shaped degumming frames (1) in the wedge-shaped groove to form a soaking sheet;
s2, preparing a part of hot soaking liquid, adding a detection reagent into the hot soaking liquid, stirring uniformly, heating the mixed solution to 40 ℃, putting a plurality of soaking pieces into the mixed solution, and stirring to uniformly distribute the soaking pieces;
and S3, soaking the soaked piece for 50min, taking out, buckling the outer side door-shaped degumming frame (1), promoting the separation of the paster and the semiconductor silicon chip, and wiping the semiconductor silicon chip by means of the door-shaped degumming frame (1), thereby completing the removal of the paster.
2. The method for removing the silicon chip patches based on the oil magnetic particle separation technology, according to claim 1, is characterized in that: the outer end of the door-shaped degumming frame (1) in the S1 is fixedly connected with an outer storage bag frame (2), two oil-magnetic-heat-change guide ropes (3) which are symmetrical to each other and penetrate through the door-shaped degumming frame (1) are embedded in the outer storage bag frame (2), one ends, close to each other, of the two oil-magnetic-heat-change guide ropes (3) are fixedly connected with conical separation sheets (4), built-in storage bags (5) are embedded in the conical separation sheets (4), fixed end sheets (6) are embedded in the built-in storage bags (5), magnetic traction balls (7) are fixedly connected to the inner wall of the built-in storage bags (5), the two magnetic traction balls (7) attract each other, elastic resetting ropes (8) are fixedly connected between the fixed end sheets (6) and the outer ends (7) of the magnetic traction balls, and a plurality of uniformly distributed release round holes (9) are drilled in the built-in storage bags (5), the inner wall of the release round hole (9) is fixedly connected with a pair of rubber sealing sheets (10) which are mutually abutted.
3. The method for removing the silicon chip patches based on the oil magnetic particle separation technology according to claim 2, which is characterized in that: the oil magnetism heat altered conductor rope (3) include with deposit built-in pipe (11) of package frame (2) intercommunication each other outward, built-in pipe (11) outer end is dug has a plurality of evenly distributed's gas round hole (12), built-in pipe (11) outer end fixedly connected with memory alloy cladding (13), memory alloy cladding (13) are embedded to be established and are installed a plurality of evenly distributed's reducing iron powder (14).
4. The method for removing the silicon chip patches based on the oil magnetic particle separation technology, according to claim 1, is characterized in that: the detection reagent in the S2 is prepared from a purple litmus test solution, the hot soak solution in the S2 is prepared from purified water, and the mixing ratio of the purple litmus test solution to the hot soak solution is 1: 80.
5. The method for removing the silicon chip patches based on the oil magnetic particle separation technology according to claim 2, which is characterized in that: the outer bag frame that deposits (2) intussuseption is filled with calcium bicarbonate powder (201), outer bag frame (2) inner wall fixedly connected with waterproof ventilated membrane (202) of depositing, waterproof ventilated membrane (202) are located calcium bicarbonate powder (201) right side.
6. The method for removing the silicon chip patches based on the oil magnetic particle separation technology according to claim 2, which is characterized in that: the conical separation sheet (4) comprises a sponge end tail (402) fixedly connected with the oil magnetic thermal change guide rope (3), and a metal cone head (401) is fixedly connected to the bottom end of the conical separation sheet (4).
7. The method for removing the silicon chip patches based on the oil magnetic particle separation technology according to claim 2, which is characterized in that: the built-in storage bag (5) is filled with acetone.
8. The method for removing the silicon chip patches based on the oil magnetic particle separation technology according to claim 2, which is characterized in that: the outer end of the elastic reset rope (8) is fixedly connected with a plurality of connection pull ropes (801) which are uniformly distributed and have the same number with the release round holes (9), and each connection pull rope (801) is fixedly connected with a corresponding rubber sealing piece (10) which is positioned on the upper side.
9. The method for removing the silicon chip patches based on the oil magnetic particle separation technology, according to claim 3, is characterized in that: the memory alloy cladding (13) is made of a nickel-titanium memory alloy material, and the equilibrium temperature of the memory alloy cladding (13) is 40 ℃.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0701007A1 (en) * | 1994-09-12 | 1996-03-13 | Gec Alsthom Transport Sa | Process for insulating magnetic sheet |
| JP2007073635A (en) * | 2005-09-05 | 2007-03-22 | Sharp Corp | Equipment and method for manufacturing deposited plate |
| CN101693240A (en) * | 2009-10-26 | 2010-04-14 | 张家港市超声电气有限公司 | Process for degumming and pre-cleaning silicon slices |
| CN102677161A (en) * | 2012-05-09 | 2012-09-19 | 中国科学院上海技术物理研究所 | Removing method for residual liquid on back of tellurium-cadmium-mercury liquid phase epitaxial thin film |
| CN108751120A (en) * | 2018-04-13 | 2018-11-06 | 杭州电子科技大学 | A kind of preparation method of silicon substrate microneedle array patch |
-
2020
- 2020-09-07 CN CN202010926461.7A patent/CN112103371B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0701007A1 (en) * | 1994-09-12 | 1996-03-13 | Gec Alsthom Transport Sa | Process for insulating magnetic sheet |
| JP2007073635A (en) * | 2005-09-05 | 2007-03-22 | Sharp Corp | Equipment and method for manufacturing deposited plate |
| CN101693240A (en) * | 2009-10-26 | 2010-04-14 | 张家港市超声电气有限公司 | Process for degumming and pre-cleaning silicon slices |
| CN102677161A (en) * | 2012-05-09 | 2012-09-19 | 中国科学院上海技术物理研究所 | Removing method for residual liquid on back of tellurium-cadmium-mercury liquid phase epitaxial thin film |
| CN108751120A (en) * | 2018-04-13 | 2018-11-06 | 杭州电子科技大学 | A kind of preparation method of silicon substrate microneedle array patch |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112732054A (en) * | 2021-01-25 | 2021-04-30 | 辽宁科技学院 | Computer network signal transmission stabilizing device and method |
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