CN112067436A - Method for testing lead strength of beam type device - Google Patents

Abstract

The invention relates to a method for testing the lead strength of beam-type devices, belonging to the field of transverse tensile strength testing of beam-type leads. ; Step 3, prepare the beam-type device to be tested; Step 4, place the substrate horizontally, and place the beam-type device to be tested horizontally on the upper surface of the substrate; and bond the gold-plated beam-type wire on one side of the beam-type device to be tested to the The microstrip line of the substrate; Step 5, bond the two ends of the gold wire to the gold-plated beam-type lead on the other side to form a gold wire loop; Step 6, vertically fix the substrate on the support table of the tensile test equipment Step 7: Pass the draw hook through the gold wire loop of the U-shaped structure, and hook the gold wire loop vertically upward; Step 8: Record the tensile force data, and complete the measurement test of the transverse tensile strength of the beam-type device leads to be tested; this The invention realizes the simple, direct and effective measurement of the transverse tensile strength of the beam lead wire.

Description

A test method for lead strength of beam-type devices

technical field

The invention belongs to the field of performance testing of electronic components, and relates to a method for testing the lead strength of beam-type components.

Background technique

The beam-type device is a device with a suspended beam-type lead structure, and its package is a bare chip without additional package. The beam-type lead diode chip is the most common in aerospace applications. The beam-type device uses electroplated gold metal beams instead of metal leads of conventional devices, and is directly connected to the microstrip circuit, eliminating the case-to-case package and reducing the case-to-case capacitance. It has the characteristics of simple structure, small size, small capacitance, and small parasitic parameters. It is widely used in microwave circuit systems such as high-frequency broadband integrated mixers, detectors, switches, and VCOs.

When the beam-type device is applied, the beam-type leads on both sides are usually mounted on the microstrip line of the substrate by wire bonding. Due to the small size of the product, the installation is difficult, and the lead wire may crack or even fall off under the applied temperature stress. Therefore, in the verification of aerospace applications, it is necessary to focus on the evaluation of assembly reliability and application adaptability of beam devices. Among them, the lead strength of beam-type devices is a key test item for the evaluation of assembly reliability and application adaptability.

When the beam device is applied and assembled in the substrate circuit, under the temperature stress, due to the different thermal expansion coefficients of the casing, the substrate and the beam lead, the beam lead may be subjected to outward pulling force or The inward squeezing force causes the lead to crack or even fall off the root. Therefore, the lead transverse tensile strength of beam leads is one of the key reliability indicators for evaluating whether beam lead devices are suitable for aerospace applications. However, there is currently no effective test method for evaluating the transverse tensile strength of beam leads at home and abroad.

At present, when evaluating beam lead beam strength, the existing measurement test standard for evaluating beam lead strength is based on the method 2011.1 Bonding Strength (Destructive Bonding Tensile Test) in GJB 548B-2005 "Test Methods and Procedures for Microelectronic Devices" ) in "3.1.5 Test Condition G-Push-Off Test (Beam Lead)" and "3.1.6 Test Condition H-Pull-Off Test (Beam Lead)". In these two test conditions, the force applied to the device is a pushing force or a pulling force, both of which are longitudinal forces perpendicular to the leads. The evaluation is the adhesion of the beam leads on the chip and the bonding strength with the substrate. The device leads cannot be measured. Transverse tensile strength, which is one of the most important indicators in the practical application of beam-type devices in aerospace.

The 41st Research Institute of China Electronics Technology Group Corporation CN 105510225 A patent discloses a bonding strength test method, the method "makes the same thin film or thick film circuit as the product to be tested, on the produced thin film or thick film circuit A blind slot is processed between the two pads of the device, and the interconnect lead or beam lead device to be tested is bonded to the pad of the thin film or thick film circuit, and the bonding point is the corresponding pad on both sides of the blind slot; the bonding The completed pad is placed on the holding table of the tensile test equipment, and the test hook is passed through the blind slot from the bottom of the interconnection lead or beam lead device to be tested, and then fixed with the interconnection lead or beam lead device to be tested for non-destructive Destructive and Destructive Bond Strength Testing". This method only improves the non-destructive operation of the bonding strength test. The purpose of the evaluation test is still the adhesion of the beam lead on the chip, and the bonding strength with the substrate. The peel force of the beam lead and the device cannot be measured. Transverse tensile strength of leads.

To sum up, the existing standard methods lack an effective test method for measuring the transverse tensile strength of beam-lead devices.

SUMMARY OF THE INVENTION

The technical problem solved by the present invention is: to overcome the deficiencies of the prior art, a method for testing the lead strength of the beam-type device is proposed, which realizes simple, direct and effective measurement of the transverse tensile strength of the beam-type lead.

The technical solution of the present invention is:

A method for testing the lead strength of a beam-type device, comprising the following steps:

Step 1, making a rectangular plate-shaped substrate;

Step 2, making a rectangular plate-shaped microstrip line on the upper surface of the substrate;

Step 3: Prepare the beam device to be tested;

Step 4. Place the substrate with the microstrip line horizontally, and place the beam-type device to be tested on the upper surface of the substrate; and bond the gold-plated beam-type wire on one side of the beam-type device to be tested to the microstrip line of the substrate superior;

Step 5. Bond both ends of the gold wire on the gold-plated beam-type lead on the other side of the beam-type device to be tested to form a gold wire loop;

Step 6: Vertically fix the substrate on which the gold-plated beam-type wire bonding on both sides of the beam-type device to be tested is completed on the support table of the tensile test equipment;

Step 7: Pass the pull hook of the tension tester through the gold wire loop, and pull the gold wire loop vertically upward along the length direction of the gold-plated beam lead;

Step 8: Record the tensile force data, and complete the measurement test of the transverse tensile strength of the leads of the beam-type device to be tested.

In the above-mentioned test method for the lead strength of a beam-type device, in the first step, the substrate is made of alumina ceramic material or 4003 copper clad laminate material; the length of the substrate is greater than or equal to 10mm; the width is 5-10mm; the thickness is 0.3- 0.5mm.

In the above-mentioned test method for the lead strength of a beam-type device, in the second step, the manufacturing method of the microstrip line is:

The microstrip line is made by thin film technology at the width side of the upper surface of the substrate; the upper surface of the microstrip line is electroplated with a gold layer, and the thickness of the gold layer is greater than or equal to 1.27 μm; the content of gold in the gold layer is greater than or equal to 99.99%; the width of the microstrip line is not Less than 2 times the width of the gold-plated beam lead.

In the above-mentioned test method for the lead strength of a beam-type device, in the third step, the beam-type device to be tested adopts a beam-type device with a suspended beam-type lead structure, bare chip, and packaged without a tube case; Two gold-plated beam-type leads are arranged on the beam-type device; the two gold-plated beam-type leads are symmetrically arranged on the sidewall of the beam-type device to be tested, and are located on a uniform level; the gold-plated beam-type leads are made of gold material, and the gold content is greater than or equal to 99.99% .

In the above-mentioned test method for the lead strength of a beam-type device, in the step 4, the bonding method of the gold-plated beam-type lead and the microstrip line is:

The semi-automatic bonding machine is used for bonding, and the furnace temperature is 120-140 ℃; the temperature of the riving knife is 100-120 ℃; the pressure is 90-100g; the port of the riving knife in the semi-automatic bonding machine adopts a rectangular structure; The port size is 150 μm × 50 μm.

In the above-mentioned test method for the lead strength of a beam-type device, in the fifth step, the gold wire ring is a U-shaped filament structure with one end open, and the axial length of the gold wire is not less than 2 mm; the tensile strength of the gold wire ring is not less than 2 mm. Greater than the tensile strength of the gold-plated beam lead; the tensile strength of the gold-plated beam lead is not less than 0.3N (30gf) multiplied by the width of the gold-plated beam lead.

In the above-mentioned test method for the lead strength of a beam-type device, in the fifth step, the method for bonding both ends of the gold wire to the gold-plated beam-type lead is:

The semi-automatic bonding machine is used for bonding, and the furnace temperature is 120-140 ℃; the temperature of the riving knife is 100-120 ℃; the pressure is 90-100g; the port of the riving knife in the semi-automatic bonding machine adopts a rectangular structure; The port size is 150 μm × 50 μm.

In the above-mentioned test method for the lead strength of a beam-type device, in the sixth step, when the substrate is vertically fixed on the holding table of the tensile test equipment, the deviation angle of the substrate along the vertical direction is -10°～10° .

In the above-mentioned test method for the lead strength of a beam-type device, in the sixth step, when the retractor hooks vertically upward to pull the gold wire loop, the deviation angle of the retractor along the vertical direction is -10° to 10°.

The beneficial effects of the present invention compared with the prior art are:

(1) The present invention realizes the test of the lateral tensile strength of the lead wire of the beam-type device, solves the problem that the reliability index evaluation of the beam-type device is very concerned about the practical application of aerospace, and provides a method suitable for all beams. The test guide for the measurement, evaluation and assessment of the transverse tensile strength of the lead wire of the beam type device; it fills a gap in the strength test method of the beam type lead wire;

(2) In the present invention, by selecting a rigid or semi-rigid substrate of an appropriate size, and using a thin-film process on the substrate to produce a gold-plated microstrip line with sufficient thickness and purity to meet the requirements of the bonding process, the gold-plated beam-type lead on one side of the beam-type device is guaranteed. Reliable bonding with the substrate microstrip line; by selecting the U-shaped gold wire with the appropriate diameter, length and material, and the appropriate bonding method, the tensile strength of the U-shaped gold wire ring is guaranteed to be greater than that of the gold-plated beam lead. Strength; vertically fix the substrate with wire bonding on both sides of the beam-type device on the support table of the tensile test equipment, and use the test equipment to pull the U-shaped gold wire loop vertically upward along the length of the gold-plated beam-type lead. Guarantee the test accuracy and the validity of test results;

(3) The present invention is ingenious in design, simple in fabrication and low in cost. It only needs to additionally fabricate a substrate circuit, a microstrip line, and a U-shaped gold wire ring to complete the beam-type device that is in the form of bare chip packaging and is difficult to install. Test of transverse tensile strength of lead wire;

(4) The present invention is easy to operate, and will not cause damage to the beam device body or leads during the test process, avoid rework or repetition of the test caused by replacing the test sample, and improve the test efficiency.

Description of drawings

FIG. 1 is a schematic diagram of the strength test of the beam lead wire of the present invention.

Detailed ways

The present invention will be further elaborated below in conjunction with the examples.

The invention fills in the deficiencies of the existing beam-type lead strength test methods, and provides a simple, direct and effective test method for measuring the transverse tensile strength of beam-type leads.

The testing principle of the present invention is as follows: one side of the beam-type device 3 to be tested is bonded with a gold-plated beam-type lead 6 on the microstrip line 2 of the substrate 1; The gold wire loop 4; hook the gold wire loop 4 through the pull hook 5 of the tensile tester, apply a lateral tensile force relative to the beam-type device 3 to be tested, record the tensile force data, and observe and record the failure category.

The test method of beam-type device lead strength, as shown in Figure 1, specifically includes the following steps:

Step 1: First, make test hardware and make a rectangular plate-shaped substrate 1; the substrate 1 is made of alumina ceramic material or 4003 copper clad laminate material; the length of the substrate 1 is greater than or equal to 10mm; the width is 5-10mm; the thickness is 0.3-0.5mm.

Step 2: Making a rectangular plate-shaped microstrip line 2 on the upper surface of the substrate 1; A gold layer is electroplated on the surface, and the thickness of the gold layer is greater than or equal to 1.27 μm; the content of gold in the gold layer is greater than or equal to 99.99%; the width of the microstrip line 2 is not less than twice the width of the gold-plated beam lead 6 .

Step 3: Prepare the beam-type device 3 to be tested; the beam-type device 3 to be tested adopts a beam-type device with a suspended beam-type lead structure, bare chip, and packaged without a tube case; the beam-type device 3 to be tested is provided with two gold-plated Beam-type leads 6; two gold-plated beam-type leads 6 are symmetrically arranged on the sidewall of the beam-type device 3 to be tested, and are located on a uniform horizontal plane; the gold-plated beam-type leads 6 are made of gold material, and the gold content is greater than or equal to 99.99%. The gold-plated beam lead 6 and the microstrip line 2 are both made of gold with a content of 99.99% or more, so as to ensure reliable bonding.

Step 4. Place the substrate 1 with the microstrip line 2 horizontally, and place the beam-type device 3 to be tested on the upper surface of the substrate 1 horizontally; and bond the gold-plated beam-type leads 6 on one side of the beam-type device 3 to be tested. to the microstrip line 2 of the substrate 1; the bonding method of the gold-plated beam lead 6 and the microstrip line 2 is: use a semi-automatic bonding machine for bonding, and the furnace temperature during bonding is 120-140 ° C; 100-120℃; pressure is 90-100g; the port of the rib in the semi-automatic bonding machine adopts a rectangular structure; the size of the port of the rib is 150μm×50μm.

Step 5: Bond both ends of the gold wire on the gold-plated beam-type lead 6 on the other side of the beam-type device 3 to be tested to form a gold-wire ring 4; The axial length of the wire is not less than 2mm; the U-shaped gold wire ring 4 should use a gold wire with a suitable diameter; the selection of the gold wire diameter should make the tensile strength of the gold wire ring 4 greater than that of the gold-plated beam lead wire 6; The tensile strength of the gold-plated beam lead 6 is not less than 0.3N30gf multiplied by the width of the gold-plated beam lead 6 .

The method for bonding both ends of the gold wire to the gold-plated beam lead 6 is as follows: use a semi-automatic bonding machine for bonding, and the furnace temperature is 120-140°C during bonding; the riving knife temperature is 100-120°C; the pressure is 90-100g ; The port of the rib in the semi-automatic bonding machine adopts a rectangular structure; the size of the port of the rib is 150 μm×50 μm. During bonding, the U-shaped gold wire ring 4 is placed horizontally, and the U-shaped open end of the U-shaped gold wire ring 4 is bonded and connected to the gold-plated beam-type lead 6 on the other side of the beam-type device 3 to be tested.

Step 6: Vertically fix the substrate 1 on which the gold-plated beam-type leads 6 on both sides of the beam-type device 3 to be tested are bonded on the wafer-bearing table of the tensile test equipment; the substrate 1 is vertically fixed on the wafer-bearing table of the tensile force test equipment , the deviation angle of the substrate 1 along the vertical direction is -10°～10°.

Step 7: Pass the pull hook 5 of the tension tester through the gold wire loop 4, and hook and pull the gold wire loop 4 vertically upward along the length direction of the gold-plated beam lead wire 6; when the pull hook 5 hooks the gold wire loop 4 vertically upward, The deviation angle of the draw hook 5 along the vertical direction is -10°˜10°.

Step 8: Record the tensile force data, and complete the measurement test of the transverse tensile strength of the leads of the beam-type device 3 to be tested (ie, along the length direction of the gold-plated beam-type leads 6 ).

Example 1

1. The substrate 1 is made of an alumina ceramic substrate. The dimensions of the substrate are: length 12mm, width 7mm, and thickness 0.3mm.

2. A microstrip line 2 is fabricated on the substrate 1 by a thin film or thick film process, the surface of the microstrip line 2 is plated with gold, and the thickness of the gold layer is 5 μm. The width of the microstrip line 2 is 0.3 mm and the length is 4 mm.

3. Prepare the silicon-based beam lead diode 3 to be tested. The chip width is 0.26mm and the length is 0.28mm (excluding lead length). The gold-plated beam leads on both sides are 0.12mm wide, 0.2mm long and 0.01mm thick respectively.

4. Bond the gold-plated beam lead 6 on one side of the silicon-based beam lead diode 3 to be tested to the microstrip line 2 of the substrate 1;

5. Bond the gold wire ring 4 on the gold-plated beam lead 6 on the other side of the silicon-based beam lead diode 3 to be tested to form a U shape; the U-shaped gold wire has a diameter of 38 μm and a length of 2.5 mm;

6. Place the substrate 1 on which the device has been bonded on the holding table of the tensile test equipment, fix the substrate 1, and reach the U-shaped gold wire loop 4 with the test pull hook 5, and hook and pull the gold wire loop 4 along the length of the lead;

7. Record the tensile force data, observe and record the failure category, and record the tensile force value. If the tensile force value is greater than 0.036N, it is judged that the transverse tensile strength of the lead of the beam lead diode 3 is qualified.

Example 2

The implementation steps of the present invention are as follows:

1. Use 4003 copper clad laminate to make substrate 1. The size of the substrate is: length 15mm, width 10mm, and thickness 0.5mm.

2. A microstrip line 2 is fabricated on the substrate 1 by a thin film or thick film process, the surface of the microstrip line 2 is plated with gold, and the thickness of the gold layer is 5 μm. The width of the microstrip line is 0.5mm and the length is 5mm.

3. Prepare the silicon-based beam lead diode 3 to be tested. The chip width is 0.6mm and the length is 0.6mm (excluding the lead length). The gold-plated beam leads on both sides are 0.15mm wide, 0.2mm long and 0.01mm thick respectively.

4. Bond one side of the silicon-based beam-type lead diode 3 to be tested with a gold-plated beam-type lead 6 to the microstrip line 2 of the substrate, as shown in 6.

5. Bond the gold wire ring 4 on the gold-plated beam lead 6 on the other side of the silicon-based beam lead diode 3 to be tested to form a U-shaped gold wire with a diameter of 50 μm and a length of 3 mm.

6. Place the substrate 1 on which the device bonding has been completed on the holding table of the tensile testing equipment, fix the substrate 1, place the testing hook 5 to the U-shaped bonding ring, and hook and pull the gold wire ring 4 along the length of the lead.

7. Record the tensile force data, observe and record the failure category, and record the tensile force value. If the tensile force value is greater than 0.045N, it is judged that the transverse tensile strength of the beam lead diode 3 is qualified.

Although the present invention has been disclosed above with preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can use the methods and technical contents disclosed above to improve the present invention without departing from the spirit and scope of the present invention. The technical solutions are subject to possible changes and modifications. Therefore, any simple modifications, equivalent changes and modifications made to the above embodiments according to the technical essence of the present invention without departing from the content of the technical solutions of the present invention belong to the technical solutions of the present invention. protected range.

Claims (9)

1. A method for testing the lead strength of a beam type device is characterized by comprising the following steps: the method comprises the following steps:

step one, manufacturing a rectangular plate-shaped substrate (1);

step two, manufacturing a rectangular plate-shaped microstrip line (2) on the upper surface of the substrate (1);

step three, preparing a beam type device to be tested (3);

step four, horizontally placing the substrate (1) with the microstrip line (2), and horizontally placing the beam type device to be tested (3) on the upper surface of the substrate (1); a gold-plated beam lead (6) on one side of the beam device (3) to be tested is bonded to the microstrip line (2) of the substrate (1);

bonding two ends of a gold wire on a gold-plated beam lead (6) on the other side of the beam device to be tested (3) to form a gold wire ring (4);

step six, vertically fixing the substrate (1) which is bonded with the gold-plated beam lead wires (6) on the two sides of the beam type device (3) to be tested on a wafer bearing table of the tensile testing equipment;

seventhly, a draw hook (5) of the tension tester penetrates through the gold wire ring (4), and the gold wire ring (4) is vertically and upwards hooked along the length direction of the gold-plated beam lead (6);

and step eight, recording the tension data, and completing the measurement test of the transverse tensile strength of the lead of the beam type device (3) to be measured.

2. The method for testing the lead strength of a beam device according to claim 1, wherein: in the first step, the substrate (1) is made of an alumina ceramic material or a 4003 copper clad plate material; the length of the substrate (1) is more than or equal to 10 mm; the width is 5-10 mm; the thickness is 0.3-0.5 mm.

3. The method for testing the lead strength of a beam device according to claim 2, wherein: in the second step, the manufacturing method of the microstrip line (2) comprises the following steps:

manufacturing a microstrip line (2) on the width edge of the upper surface of the substrate (1) by adopting a thin film process; electroplating a gold layer on the upper surface of the microstrip line (2), wherein the thickness of the gold layer is more than or equal to 1.27 mu m; the content of gold in the gold layer is more than or equal to 99.99 percent; the width of the microstrip line (2) is not less than 2 times of the width of the gold-plated beam lead (6).

4. The method for testing the lead strength of a beam device according to claim 3, wherein: in the third step, the beam type device to be tested (3) adopts a beam type device with a suspended beam type lead structure, a bare chip and no tube shell package; 2 gold-plated beam type leads (6) are arranged on the beam type device to be tested (3); the 2 gold-plated beam type leads (6) are symmetrically arranged on the side wall of the beam type device to be tested (3) and are positioned on a uniform horizontal plane; the gold-plated beam lead (6) is made of gold material, and the gold content is more than or equal to 99.99%.

5. The method for testing the lead strength of a beam device according to claim 4, wherein: in the fourth step, the bonding method of the gold-plated beam lead (6) and the microstrip line (2) comprises the following steps:

bonding by using a semi-automatic bonding machine, wherein the furnace temperature is 120-140 ℃ during bonding; the temperature of the cleaver is 100-120 ℃; the pressure is 90-100 g; the port of the cleaver in the semi-automatic bonding machine adopts a rectangular structure; the chopper port size was 150 μm by 50 μm.

6. The method for testing the lead strength of a beam device according to claim 5, wherein: in the fifth step, the gold wire ring (4) is of a U-shaped filamentous structure with an opening at one end, and the axial length of the gold wire is not less than 2 mm; the tensile strength of the gold wire ring (4) is greater than that of the gold-plated beam lead (6); the tensile strength of the gold-plated beam lead (6) is not less than 0.3N (30gf) times the width of the gold-plated beam lead (6).

7. The method for testing the lead strength of a beam device according to claim 6, wherein: in the fifth step, the method for bonding the two ends of the gold wire and the gold-plated beam lead (6) comprises the following steps:

bonding by using a semi-automatic bonding machine, wherein the furnace temperature is 120-140 ℃ during bonding; the temperature of the cleaver is 100-120 ℃; the pressure is 90-100 g; the port of the cleaver in the semi-automatic bonding machine adopts a rectangular structure; the chopper port size was 150 μm by 50 μm.

8. The method for testing the lead strength of a beam device according to claim 7, wherein: in the sixth step, when the substrate (1) is vertically fixed on a wafer bearing table of the tensile test equipment, the deviation angle of the substrate (1) along the vertical direction is-10 degrees to 10 degrees.

9. The method for testing the lead strength of a beam device according to claim 8, wherein: in the seventh step, when the metal wire ring (4) is pulled upwards by the draw hook (5), the deviation angle of the draw hook (5) along the vertical direction is-10 degrees to 10 degrees.

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