CN111926314B - Chemical tinning process for crystalline silicon heterojunction solar cell - Google Patents

Chemical tinning process for crystalline silicon heterojunction solar cell Download PDF

Info

Publication number
CN111926314B
CN111926314B CN202010828019.0A CN202010828019A CN111926314B CN 111926314 B CN111926314 B CN 111926314B CN 202010828019 A CN202010828019 A CN 202010828019A CN 111926314 B CN111926314 B CN 111926314B
Authority
CN
China
Prior art keywords
chemical
tin plating
stachyose
crystalline silicon
plating solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202010828019.0A
Other languages
Chinese (zh)
Other versions
CN111926314A (en
Inventor
田志斌
詹益腾
邓正平
陈维速
谢飞凤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GUANGZHOU SANFU NEW MATERIALS TECHNOLOGY CO LTD
Original Assignee
GUANGZHOU SANFU NEW MATERIALS TECHNOLOGY CO LTD
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GUANGZHOU SANFU NEW MATERIALS TECHNOLOGY CO LTD filed Critical GUANGZHOU SANFU NEW MATERIALS TECHNOLOGY CO LTD
Priority to CN202010828019.0A priority Critical patent/CN111926314B/en
Publication of CN111926314A publication Critical patent/CN111926314A/en
Application granted granted Critical
Publication of CN111926314B publication Critical patent/CN111926314B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/52Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating using reducing agents for coating with metallic material not provided for in a single one of groups C23C18/32 - C23C18/50

Abstract

The invention relates to the technical field of metal surface treatment, in particular to a chemical tin plating process for a crystalline silicon heterojunction solar battery, wherein a chemical tin plating solution takes deionized water as a solvent and comprises the following components in concentration: 10-20 g/L of tin salt, 0.25-0.5 g/L of sodium dodecyl benzene sulfonate, 0.1-0.25 g/L of naphthol ethoxy sulfonic acid, 0.05-0.2 g/L of stachyose, 0.06-0.12 g/L of diphenyl vinyl ketone, 0.5-1 g/L of grain refiner, 50-100 g/L of reducer and 0.5-2.5 g/L of dispersant; the chemical tinning solution adopted by the invention is not easily influenced by overhigh temperature or overlow temperature, has good low-temperature stability and high-temperature stability, creatively adopts stachyose and diphenyl vinyl ketone as a stabilizer, obviously improves the temperature tolerance of the chemical tinning solution, and has short chemical tinning process time and high production efficiency.

Description

Chemical tinning process for crystalline silicon heterojunction solar cell
Technical Field
The invention relates to the technical field of metal surface treatment, in particular to a chemical tin plating process for a crystalline silicon heterojunction solar battery.
Background
The typical crystalline silicon Heterojunction solar cell is an HIT (Heterojunction with Intrinsic Thin-layer) cell, and is structurally characterized in that the front and back surfaces of monocrystalline silicon (c-Si) are an Intrinsic amorphous silicon (i-a-Si: H) Thin layer and a p + or n + heavily doped amorphous silicon layer, and a transparent electrode ITO and a collector electrode are prepared outside amorphous silicon (a-Si: H) on two sides to form the monocrystalline silicon Heterojunction solar cell with a symmetrical structure. One of the important reasons for the high efficiency of HIT cells is the unique, high quality thin layer of intrinsic amorphous silicon that significantly passivates the interface state defects, reduces sub-recombination, and improves open circuit voltage and cell performance.
In the assembly process of the crystalline silicon heterojunction solar cell, a tinned copper strip is required to be welded on a main grid line of the front side (negative pole) of the cell as a bus bar, on one hand, because the weldability of the copper strip is poor, the weldability of the copper strip can be obviously improved by plating a tinned layer on the copper strip, and on the other hand, the copper strip can be protected from being oxidized by plating the tinned layer on the copper strip, so that the service life of the copper strip is prolonged. In the plating method, the chemical tin plating process has good dispersion and deep plating capability and has strong advantages.
For example, chinese patent document CN104746057B discloses an electroless tin plating solution and a preparation method thereof, wherein the electroless tin plating solution contains a tin salt, a complexing agent, a reducing agent and an accelerator, wherein the reducing agent is titanium chloride, and the accelerator contains a sulfonic acid accelerator; the sulfonic acid accelerator is at least one selected from A, B, C, wherein A is dodecyl seleno sulfonate, B is a mixture of dodecyl sulfonate and seleno sulfonate, and C is a mixture of dodecyl sulfonate and seleno sulfate. The chemical tin plating solution provided by the invention can effectively improve the activity and stability of the plating solution by adding the sulfonic acid promoter in the chemical tin plating solution of the titanium chloride reducing agent. In practical application, however, the chemical tin plating solution is not easy to discolor and get turbid in a short time, but is easy to be subjected to external factors with high temperature or low temperature for a long time, so that the chemical tin plating solution is easy to get turbid, precipitate and the like, the quality is seriously affected, the stability of the chemical tin plating solution is greatly weakened, and the chemical tin plating process needs about 5 hours and consumes long time, so that the chemical tin plating process has an improvement space.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide the chemical tinning solution for the crystalline silicon heterojunction solar cell, the adopted chemical tinning solution is not easily influenced by overhigh temperature or overlow temperature, the low-temperature stability and the high-temperature stability are good, stachyose and diphenyl vinyl ketone are creatively adopted to be used as a stabilizer, and the temperature tolerance of the chemical tinning solution is obviously improved.
The above object of the present invention is achieved by the following technical solutions:
the chemical tinning solution for the crystalline silicon heterojunction solar cell takes deionized water as a solvent and comprises the following components in concentration: 10-20 g/L of tin salt, 0.25-0.5 g/L of sodium dodecyl benzene sulfonate, 0.1-0.25 g/L of naphthol ethoxy sulfonic acid, 0.05-0.2 g/L of stachyose, 0.06-0.12 g/L of diphenyl vinyl ketone, 0.5-1 g/L of grain refiner, 50-100 g/L of reducer and 0.5-2.5 g/L of dispersant.
Preferably, deionized water is used as a solvent, and the following components are contained in the following concentrations: 10g/L of tin salt, 0.25g/L of sodium dodecyl benzene sulfonate, 0.1g/L of naphthol ethoxy sulfonic acid, 0.05g/L of stachyose, 0.06g/L of diphenyl vinyl ketone, 0.5g/L of grain refiner, 50g/L of reducing agent and 0.5g/L of dispersing agent.
Preferably, deionized water is used as a solvent, and the following components are contained in the following concentrations: 20g/L of tin salt, 0.5g/L of sodium dodecyl benzene sulfonate, 0.25g/L of naphthol ethoxy sulfonic acid, 0.2g/L of stachyose, 0.12g/L of diphenyl vinyl ketone, 1g/L of grain refiner, 100g/L of reducing agent and 2.5g/L of dispersing agent.
Preferably, deionized water is used as a solvent, and the following components are contained in the following concentrations: 16g/L of tin salt, 0.32g/L of sodium dodecyl benzene sulfonate, 0.18g/L of naphthol ethoxy sulfonic acid, 0.12g/L of stachyose, 0.09g/L of diphenyl vinyl ketone, 0.6g/L of grain refiner, 55g/L of reducing agent and 1.5g/L of dispersing agent.
More preferably, the dispersing agent comprises alkylphenol polyoxyethylene and polyethylene glycol, and the mass ratio of the alkylphenol polyoxyethylene to the polyethylene glycol is 1 (0.4-0.8).
More preferably, the grain refiner is an alkylaniline or a thiadiazole.
More preferably, the reducing agent is selected from sodium hypophosphite or dimethylamino borane.
The second purpose of the invention is to provide a preparation method of chemical tinning solution for a crystalline silicon heterojunction solar cell, which comprises the following steps:
s1, mixing tin salt, sodium dodecyl benzene sulfonate, naphthol ethoxy sulfonic acid, stachyose and deionized water according to a formula ratio to obtain a mixture A;
s2, mixing the diphenyl vinyl ketone, the grain refiner, the reducing agent and the dispersing agent according to the formula ratio to obtain a mixture B;
s3, adding the mixture B in the step S2 into the mixture A in the step S1, exhausting for 4-5min, and continuing stirring for 20-30 min under inert gas to obtain the chemical tin plating solution.
The third purpose of the invention is to provide a chemical tin plating process for a crystalline silicon heterojunction solar cell, which comprises the step of immersing a piece to be plated in the chemical tin plating solution of claims 1-3 to form a metal tin layer on the surface of the piece to be plated.
More preferably, the pH value of the chemical tinning solution is 3.7-6.5.
The invention uses sodium dodecyl benzene sulfonate and naphthol ethoxy sulfonic acid as brightening agent to make chemical tin plating layer obtain ideal brightening effect, but in the actual production process, it is found that the chemical tin plating solution prepared in the brightening system has poor low-temperature stability and high-temperature stability, and some temperature sensitive components may be decomposed to cause the chemical tin plating solution to be easy to generate turbidity, precipitation and other phenomena, therefore, the inventor adds stachyose and diphenyl vinyl ketone into the chemical tin plating solution as stabilizing agent, can obviously improve the temperature tolerance of the chemical tin plating solution, and improves the long-term stability of the chemical tin plating solution, and only one of the two is used as stabilizing agent, and can not obtain the same technical effect. The inventors have studied the mechanism of the above effect, and speculated that it is more likely that stachyose and benzophenone interact to form a stable component.
But the solubility of the diphenyl vinyl ketone in water is lower, the use of the chemical tinning solution is limited to a certain extent, and the sodium dodecyl benzene sulfonate in the formula can well promote the dissolution of the diphenyl vinyl ketone in the process of preparing the chemical tinning solution, so that the stability of the system is improved.
In addition, as the stachyose is added into the chemical tinning solution with the pH value of 3.7-6.5, the time for forming the metal tin layer is unexpectedly found to be shortened, the chemical tinning process only needs about 3-10 min, and the stachyose possibly changes the system environment of the chemical tinning solution under an acidic condition, so that the production time is shortened, and the production efficiency is improved.
In summary, the invention includes at least one of the following beneficial technical effects:
the chemical tin plating solution provided by the invention is reasonable in formula, stachyose and diphenyl vinyl ketone are used together as a stabilizer and added into the chemical tin plating solution, so that the temperature tolerance of the chemical tin plating solution can be obviously improved, the long-term stability of the chemical tin plating solution is improved, the chemical tin plating solution is not easy to generate phenomena such as turbidity and precipitation, the chemical tin plating process time is short, and the production efficiency is high.
Detailed Description
The present invention will be described in further detail below.
In the following examples and comparative examples, the manufacturer information of part of the raw materials is shown in table 1.
TABLE 1
Raw materials Manufacturer of the product
Sodium dodecyl benzene sulfonate Shanghai-sourced leaf Biotechnology, Inc., CAS number: 25155-30-0
Naphthol ethoxy sulfonic acid Hangzhou Jiehan Chemical Co.,Ltd.
Stachyose Hebei Zhentian food additive Co Ltd
Diphenyl vinyl ketone Jinjinle chemical Co Ltd
Example 1
An electroless tin plating solution, which takes deionized water as a solvent and comprises the following components in concentration: 10g/L of tin methanesulfonate, 0.25g/L of sodium dodecyl benzene sulfonate, 0.1g/L of naphthol ethoxy sulfonic acid, 0.05g/L of stachyose, 0.06g/L of diphenyl vinyl ketone, 0.5g/L of alkyl aniline, 25g/L of sodium hypophosphite, 25g/L of dimethylamino borane, 0.357g/L of alkylphenol polyoxyethylene ether and 0.143g/L of polyethylene glycol.
A preparation method of an electroless tin plating solution comprises the following steps:
s1, mixing tin methanesulfonate, sodium dodecyl benzene sulfonate, naphthol ethoxy sulfonic acid, stachyose and deionized water according to a formula ratio to obtain a mixture A;
s2, mixing the formula amount of diphenyl vinyl ketone, alkyl aniline, sodium hypophosphite, dimethylamino borane, alkylphenol polyoxyethylene and polyethylene glycol to obtain a mixture B;
s3, adding the mixture B in the step S2 into the mixture A in the step S1, exhausting for 4-5min, and continuing to perform N2Stirring for 20min to obtain chemical tinning solution with pH of 3.7.
A chemical tinning process for a crystalline silicon heterojunction solar cell comprises the steps of deoiling a part to be plated by adopting 30g/L trisodium phosphate, washing with pure water, washing with flowing water, chemically polishing, washing with pure water again, washing with flowing water, soaking the part to be plated in the chemical tinning solution at the temperature of 60 ℃, forming a metal tin layer on the surface of the part to be plated, washing with pure water, and drying at the temperature of 60 ℃.
Example 2
An electroless tin plating solution, which takes deionized water as a solvent and comprises the following components in concentration: 15g/L of stannous chloride, 0.35g/L of sodium dodecyl benzene sulfonate, 0.15g/L of naphthol ethoxy sulfonic acid, 0.1g/L of stachyose, 0.08g/L of diphenyl vinyl ketone, 0.7g/L of thiadiazole, 35g/L of sodium hypophosphite, 30g/L of dimethylamino borane, 0.667g/L of alkylphenol polyoxyethylene and 0.333g/L of polyethylene glycol.
A preparation method of an electroless tin plating solution comprises the following steps:
s1, mixing stannous chloride, sodium dodecyl benzene sulfonate, naphthol ethoxy sulfonic acid, stachyose and deionized water according to a formula ratio to obtain a mixture A;
s2, mixing the formula amount of diphenyl vinyl ketone, thiadiazole, sodium hypophosphite, dimethylamino borane, alkylphenol polyoxyethylene and polyethylene glycol to obtain a mixture B;
s3, adding the mixture B in the step S2 into the mixture A in the step S1, exhausting for 4-5min, and continuing to perform N2Stirring for 25min to obtain chemical tinning solution with pH of 5.1.
A chemical tinning process for a crystalline silicon heterojunction solar cell comprises the steps of deoiling a part to be plated by adopting 30g/L trisodium phosphate, washing with pure water, washing with flowing water, chemically polishing, washing with pure water again, washing with flowing water, soaking the part to be plated in the chemical tinning solution at the temperature of 60 ℃, forming a metal tin layer on the surface of the part to be plated, washing with pure water, and drying at the temperature of 60 ℃.
Example 3
An electroless tin plating solution, which takes deionized water as a solvent and comprises the following components in concentration: 15g/L of tin methanesulfonate, 0.4g/L of sodium dodecyl benzene sulfonate, 0.2g/L of naphthol ethoxy sulfonic acid, 0.15g/L of stachyose, 0.1g/L of diphenyl vinyl ketone, 0.9g/L of alkyl aniline, 40g/L of sodium hypophosphite, 1.25g/L of dimethylamino borane/alkylphenol polyoxyethylene ether and 0.75g/L of polyethylene glycol. L, L,
A preparation method of an electroless tin plating solution comprises the following steps:
s1, mixing tin methanesulfonate, sodium dodecyl benzene sulfonate, naphthol ethoxy sulfonic acid, stachyose and deionized water according to a formula ratio to obtain a mixture A;
s2, mixing the formula amount of diphenyl vinyl ketone, alkyl aniline, sodium hypophosphite, dimethylamino borane, alkylphenol polyoxyethylene and polyethylene glycol to obtain a mixture B;
s3, adding the mixture B in the step S2 into the mixture A in the step S1, exhausting for 4-5min, and continuing to perform N2Stirring for 25min to obtain chemical tinning solution with pH of 5.8.
A chemical tinning process for a crystalline silicon heterojunction solar cell comprises the steps of deoiling a part to be plated by adopting 30g/L trisodium phosphate, washing with pure water, washing with flowing water, chemically polishing, washing with pure water again, washing with flowing water, soaking the part to be plated in the chemical tinning solution at the temperature of 60 ℃, forming a metal tin layer on the surface of the part to be plated, washing with pure water, and drying at the temperature of 60 ℃.
Example 4
An electroless tin plating solution, which takes deionized water as a solvent and comprises the following components in concentration: 20g/L of tin methanesulfonate, 0.5g/L of sodium dodecyl benzene sulfonate, 0.25g/L of naphthol ethoxy sulfonic acid, 0.2g/L of stachyose, 0.12g/L of diphenyl vinyl ketone, 1.0g/L of alkylaniline, 55g/L of sodium hypophosphite, 45g/L of dimethylamino borane, 1.389g/L of alkylphenol polyoxyethylene ether and 0.111g/L of polyethylene glycol.
A preparation method of an electroless tin plating solution comprises the following steps:
s1, mixing tin methanesulfonate, sodium dodecyl benzene sulfonate, naphthol ethoxy sulfonic acid, stachyose and deionized water according to a formula ratio to obtain a mixture A;
s2, mixing the formula amount of diphenyl vinyl ketone, alkyl aniline, sodium hypophosphite, dimethylamino borane alkylphenol polyoxyethylene ether and polyethylene glycol to obtain a mixture B;
s3, adding the mixture B in the step S2 into the mixture A in the step S1, exhausting for 4-5min, and continuing to perform N2Stirring for 30min to obtain chemical tinning solution with pH of 6.5.
A chemical tinning process for a crystalline silicon heterojunction solar cell comprises the steps of deoiling a part to be plated by adopting 30g/L trisodium phosphate, washing with pure water, washing with flowing water, chemically polishing, washing with pure water again, washing with flowing water, soaking the part to be plated in the chemical tinning solution at the temperature of 60 ℃, forming a metal tin layer on the surface of the part to be plated, washing with pure water, and drying at the temperature of 60 ℃.
Example 5
An electroless tin plating solution, which takes deionized water as a solvent and comprises the following components in concentration: 16g/L of tin methanesulfonate, 0.32g/L of sodium dodecyl benzene sulfonate, 0.18g/L of naphthol ethoxy sulfonic acid, 0.12g/L of stachyose, 0.09g/L of diphenyl vinyl ketone, 0.6g/L of alkyl aniline, 30g/L of sodium hypophosphite, 25g/L of dimethylamino borane, 1g/L of alkylphenol polyoxyethylene ether and 0.5g/L of polyethylene glycol.
A preparation method of an electroless tin plating solution comprises the following steps:
s1, mixing tin methanesulfonate, sodium dodecyl benzene sulfonate, naphthol ethoxy sulfonic acid, stachyose and deionized water according to a formula ratio to obtain a mixture A;
s2, mixing the formula amount of diphenyl vinyl ketone, alkyl aniline, sodium hypophosphite, dimethylamino borane, alkylphenol polyoxyethylene and polyethylene glycol to obtain a mixture B;
s3, adding the mixture B in the step S2 into the mixture A in the step S1, exhausting for 4-5min, and continuing to perform N2Stirring for 30min to obtain chemical tinning solution with pH of 5.6.
A chemical tinning process for a crystalline silicon heterojunction solar cell comprises the steps of deoiling a part to be plated by adopting 30g/L trisodium phosphate, washing with pure water, washing with flowing water, chemically polishing, washing with pure water again, washing with flowing water, soaking the part to be plated in the chemical tinning solution at the temperature of 60 ℃, forming a metal tin layer on the surface of the part to be plated, washing with pure water, and drying at the temperature of 60 ℃.
Comparative example 1
Similar to example 5, except that benzophenone and stachyose were not included, the remaining parameters were the same as in example 5.
Comparative example 2
Similar to example 5, except that benzophenone was not included, the remaining parameters were the same as example 5.
Comparative example 3
Similar to example 5, except that stachyose was not included, the remaining parameters were the same as in example 5.
Comparative example 4
Similar to example 5, except that methanesulfonic acid was used instead of sodium dodecylbenzenesulfonate, the other parameters were the same as in example 5.
Test example I, high temperature, Low temperature storage stability test
Placing the chemical tinning solutions prepared in the examples 1-5 and the comparative examples 1-4 in an electric heating constant temperature incubator at 40 ℃ for 48 hours, recovering the room temperature, observing the appearance change, and judging the high-temperature stability according to the test result; the electroless tin plating solutions prepared in examples 1 to 5 and comparative examples 1 to 4 were stored at-5 ℃ for 48 hours, and the stability was observed, and the low temperature stability was judged according to the test results.
The appearance change comprises: turbidity and precipitation. The results are shown in Table 2.
TABLE 2 stability test results
Figure BDA0002636942090000071
As can be seen from the data in Table 2, the electroless tin plating solutions prepared in examples 1 to 5 of the present invention have a clear appearance, no turbid precipitates, and good stability when they are left at high temperature (40 ℃) or low temperature (-5 ℃) for 48 hours.
Comparative example 1 does not contain benzophenone and stachyose, and the prepared chemical tin plating solution has turbid appearance and turbid sediment after being placed for 48 hours at high temperature (40 ℃) or low temperature (5 ℃); when the comparative example 2 only contains stachyose, the prepared chemical tinning solution has the phenomena of micro turbidity, no turbid sediment and the like at high temperature and low temperature, and the comparative example 3 only contains the diphenyl vinyl ketone, and the prepared chemical tinning solution has the phenomena of micro turbidity, micro turbid sediment and the like at high temperature and low temperature, which shows that only one of the two is taken as a stabilizer, and the same technical effect cannot be obtained. The combination of stachyose and diphenyl vinyl ketone can obviously improve the temperature tolerance of the chemical tin plating solution, and for the mechanism of the effect, the inventor is in research, and supposes that the stachyose and the diphenyl vinyl ketone interact to form the effect of a stable component.
Comparative example 4 in which sodium dodecylbenzenesulfonate was replaced with methanesulfonic acid, the electroless tin plating solution was left at a high temperature (40 ℃ C.) or a low temperature (-5 ℃ C.) for 48 hours, and the electroless tin plating solution was cloudy and a cloudy precipitate was generated. The invention adopts the sodium dodecyl benzene sulfonate not only as a brightening agent, but also can promote the dissolution of the diphenyl vinyl ketone, so that the diphenyl vinyl ketone has better effect as a stabilizing agent.
Test example two, Performance test
2.1 Brightness test: taking a copper sheet with the thickness of 3cm multiplied by 3cm as a piece to be plated, adopting the chemical tinning processes of the examples 1-5 and the comparative examples 1-3, respectively soaking the copper sheet in the chemical tinning solutions of the examples 1-5 and the comparative examples 1-3, and taking out to observe the brightness of a coating on the surface of the tinned copper sheet;
2.2 solderability test: respectively soaking the tinned copper sheets obtained in the test 2.1 in a welding flux, soaking the tinned copper sheets in molten tin at the temperature of 250 ℃ for 5s, taking out the tinned copper sheets, and observing that the tinned copper sheets have no defects of pinholes, bubbles, black spots, no tin coating and the like and are qualified;
2.3 the time to obtain acceptable tin plated copper sheets was measured and the results are shown in Table 3.
TABLE 3
Group of Brightness property Weldability Chemical tin plating time
Example 1 Light brightness Qualified 8min
Example 2 Light brightness Qualified 10min
Example 3 Light brightness Qualified 9min
Example 4 Light brightness Qualified 5min
Example 5 Light brightness Qualified 3min
Comparative example 1 Light brightness Small air bubble and pinhole 20min
Comparative example 2 Light brightness Small bubbles 15min
Comparative example 3 Light brightness Small bubbles 18min
As can be seen from table 3, compared with comparative examples 1 to 3, the tinned copper sheets obtained by performing the chemical tinning process in examples 1 to 5 are bright and qualified in weldability, and unqualified phenomena such as small bubbles and pinholes are not generated, and the time for obtaining qualified tinned copper sheets by performing the chemical tinning process in examples 1 to 5 is greatly shortened, which indicates that stachyose is added into the chemical tinning solution with the pH value of 3.7 to 6.5, so that the chemical tinning process time can be shortened, and the production efficiency is improved.
Test III, Oxidation resistance test
The tin-plated copper sheets obtained in examples 1 to 5 through test 2.1 were left for 7 days and observed under an SEM electron microscope.
And (3) test results: the oxidation of the surface of the tin-plated copper sheet was not obvious under the SEM electron microscope.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.

Claims (7)

1. The chemical tin plating solution for the crystalline silicon heterojunction solar cell is characterized by taking deionized water as a solvent and comprising the following components in concentration: 10-20 g/L of tin salt, 0.25-0.5 g/L of sodium dodecyl benzene sulfonate, 0.1-0.25 g/L of naphthol ethoxy sulfonic acid, 0.05-0.2 g/L of stachyose, 0.06-0.12 g/L of diphenyl vinyl ketone, 0.5-1 g/L of grain refiner, 50-100 g/L of reducer and 0.5-2.5 g/L of dispersant; the dispersing agent comprises alkylphenol polyoxyethylene and polyethylene glycol, and the mass ratio of the alkylphenol polyoxyethylene to the polyethylene glycol is 1 (0.4-0.8); the grain refiner is alkyl aniline or thiadiazole; the reducing agent is selected from sodium hypophosphite or dimethylamino borane.
2. The electroless tin plating solution for crystalline silicon heterojunction solar cells according to claim 1, wherein deionized water is used as a solvent, and the following components are contained in the following concentrations: 10g/L of tin salt, 0.25g/L of sodium dodecyl benzene sulfonate, 0.1g/L of naphthol ethoxy sulfonic acid, 0.05g/L of stachyose, 0.06g/L of diphenyl vinyl ketone, 0.5g/L of grain refiner, 50g/L of reducing agent and 0.5g/L of dispersing agent.
3. The electroless tin plating solution for crystalline silicon heterojunction solar cells according to claim 1, wherein deionized water is used as a solvent, and the following components are contained in the following concentrations: 20g/L of tin salt, 0.5g/L of sodium dodecyl benzene sulfonate, 0.25g/L of naphthol ethoxy sulfonic acid, 0.2g/L of stachyose, 0.12g/L of diphenyl vinyl ketone, 1g/L of grain refiner, 100g/L of reducing agent and 2.5g/L of dispersing agent.
4. The electroless tin plating solution for crystalline silicon heterojunction solar cells according to claim 1, wherein deionized water is used as a solvent, and the following components are contained in the following concentrations: 16g/L of tin salt, 0.32g/L of sodium dodecyl benzene sulfonate, 0.18g/L of naphthol ethoxy sulfonic acid, 0.12g/L of stachyose, 0.09g/L of diphenyl vinyl ketone, 0.6g/L of grain refiner, 55g/L of reducing agent and 1.5g/L of dispersing agent.
5. A preparation method of a chemical tinning solution for a crystalline silicon heterojunction solar cell is characterized by comprising the following steps:
s1, mixing tin salt, sodium dodecyl benzene sulfonate, naphthol ethoxy sulfonic acid, stachyose and deionized water according to a formula ratio to obtain a mixture A;
s2, mixing the diphenyl vinyl ketone, the grain refiner, the reducing agent and the dispersing agent according to the formula ratio to obtain a mixture B;
s3, adding the mixture B in the step S2 into the mixture A in the step S1, exhausting for 4-5min, and continuing stirring for 20-30 min under inert gas to obtain the chemical tin plating solution.
6. An electroless tin plating process for a crystalline silicon heterojunction solar cell, which comprises the step of immersing a workpiece to be plated in the electroless tin plating solution according to claims 1-3 to form a metallic tin layer on the surface of the workpiece to be plated.
7. The chemical tin plating process for the crystalline silicon heterojunction solar cell as claimed in claim 6, wherein the pH value of the chemical tin plating solution is 3.7-6.5.
CN202010828019.0A 2020-08-17 2020-08-17 Chemical tinning process for crystalline silicon heterojunction solar cell Active CN111926314B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010828019.0A CN111926314B (en) 2020-08-17 2020-08-17 Chemical tinning process for crystalline silicon heterojunction solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010828019.0A CN111926314B (en) 2020-08-17 2020-08-17 Chemical tinning process for crystalline silicon heterojunction solar cell

Publications (2)

Publication Number Publication Date
CN111926314A CN111926314A (en) 2020-11-13
CN111926314B true CN111926314B (en) 2021-10-26

Family

ID=73304339

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010828019.0A Active CN111926314B (en) 2020-08-17 2020-08-17 Chemical tinning process for crystalline silicon heterojunction solar cell

Country Status (1)

Country Link
CN (1) CN111926314B (en)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101705482A (en) * 2009-11-19 2010-05-12 广州电器科学研究院 Alkyl sulfonic acid chemical tinning solution and chemical tinning solution based tinning process
CN102226274A (en) * 2011-06-17 2011-10-26 山东大学 Method of preparing anticorrosion coating for metallic ground grid
CN103173748A (en) * 2011-12-23 2013-06-26 李振萍 Chemical tin plating solution
CN104076071A (en) * 2013-12-19 2014-10-01 浙江工商大学 Lupeose detection method based on foamy copper electrode
CN107109651A (en) * 2014-12-25 2017-08-29 Mec股份有限公司 The detergent remover on electroless tin plating envelope surface and its forming method of bulking liquor and tin coating
CN107365986A (en) * 2017-07-11 2017-11-21 东莞市富默克化工有限公司 A kind of tin plating technique of chemical tin inorganic agent and application the chemical tin inorganic agent
CN110331392A (en) * 2019-08-01 2019-10-15 广州三孚新材料科技股份有限公司 Chemical tin plating solution and preparation method thereof

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8012334B2 (en) * 2007-04-03 2011-09-06 Rohm And Haas Electronic Materials Llc Metal plating compositions and methods
US8609256B2 (en) * 2008-10-02 2013-12-17 E I Du Pont De Nemours And Company Nickel-gold plateable thick film silver paste
JP5891771B2 (en) * 2011-01-18 2016-03-23 富士通株式会社 Surface coating method, semiconductor device, and mounting circuit board

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101705482A (en) * 2009-11-19 2010-05-12 广州电器科学研究院 Alkyl sulfonic acid chemical tinning solution and chemical tinning solution based tinning process
CN102226274A (en) * 2011-06-17 2011-10-26 山东大学 Method of preparing anticorrosion coating for metallic ground grid
CN103173748A (en) * 2011-12-23 2013-06-26 李振萍 Chemical tin plating solution
CN104076071A (en) * 2013-12-19 2014-10-01 浙江工商大学 Lupeose detection method based on foamy copper electrode
CN107109651A (en) * 2014-12-25 2017-08-29 Mec股份有限公司 The detergent remover on electroless tin plating envelope surface and its forming method of bulking liquor and tin coating
CN107365986A (en) * 2017-07-11 2017-11-21 东莞市富默克化工有限公司 A kind of tin plating technique of chemical tin inorganic agent and application the chemical tin inorganic agent
CN110331392A (en) * 2019-08-01 2019-10-15 广州三孚新材料科技股份有限公司 Chemical tin plating solution and preparation method thereof

Also Published As

Publication number Publication date
CN111926314A (en) 2020-11-13

Similar Documents

Publication Publication Date Title
CN102191517B (en) Method of electroplating zinc, nickel, molybdenum and their alloys by using ionic liquid
CN102162110B (en) Methyl sulfonate tinning electrolyte and tinning method of steel strip or steel plate
CN110205659B (en) Electrotinning additive and preparation method thereof
CN113136602A (en) Preparation and application of bismuth vanadate/Vo-FeNiOOH composite photo-anode
CN108251869B (en) Tin plating electrolyte and the preparation method and application thereof
KR101828775B1 (en) Electroplating of metals on conductive oxide substrates
CN112195487B (en) Manufacturing method for improving tensile strength of light and thin copper foil
CN102021613A (en) Electrolyte composition
CN102758228A (en) Sulfonic acid type semi-bright pure tin electroplating solution
CN107299366A (en) Non-cyanide plating solution for copper-plating used
CN110306213B (en) Tin plating solution for solar cell and preparation method thereof
CN109666954A (en) A kind of tin plating additive and preparation method thereof
US20090188808A1 (en) Indium electroplating baths for thin layer deposition
CN111926314B (en) Chemical tinning process for crystalline silicon heterojunction solar cell
CN111641009A (en) Aluminum-air battery electrolyte, preparation method and application thereof
CN116387444A (en) Zinc cathode with natural polymer protective layer and preparation method and application thereof
CN113930812B (en) Tin plating liquid and tin plating method for chip electronic component
Arafat et al. Effect of additives on the microstructure of electroplated tin films
CN105821452A (en) Plating solution formula for electroplating pure tin on copper wire and electroplating method
CN109504990B (en) Near-neutral brush plating silver plating solution and preparation process and use method thereof
CN111206272B (en) Plating solution additive and plating solution for electroplating matte tin on heterojunction cell, and preparation method and application of plating solution additive and plating solution
CN110846693B (en) High-dispersity alkaline cyanide-free zinc plating brightener and preparation method and application thereof
Zheng et al. The synergic impact of Saccharin and 2-butyne 1, 4 diol on the electrodeposition of nanocrystalline NiW alloy
CN101768765A (en) Electrolyte and method for manufacturing copper foil by using same
TWI490376B (en) High speed copper plating process

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant