CN111650237B - Device for testing thermal expansion coefficient of micro sample by using nano mechanical tester - Google Patents
Device for testing thermal expansion coefficient of micro sample by using nano mechanical tester Download PDFInfo
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- CN111650237B CN111650237B CN202010628069.4A CN202010628069A CN111650237B CN 111650237 B CN111650237 B CN 111650237B CN 202010628069 A CN202010628069 A CN 202010628069A CN 111650237 B CN111650237 B CN 111650237B
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- 238000012360 testing method Methods 0.000 title claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 24
- 239000010703 silicon Substances 0.000 claims abstract description 24
- 238000010438 heat treatment Methods 0.000 claims abstract description 22
- 239000003292 glue Substances 0.000 claims description 6
- 238000005259 measurement Methods 0.000 abstract description 9
- 238000010276 construction Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 19
- 239000000463 material Substances 0.000 description 16
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 230000002411 adverse Effects 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- 230000008602 contraction Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- RRLHMJHRFMHVNM-BQVXCWBNSA-N [(2s,3r,6r)-6-[5-[5-hydroxy-3-(4-hydroxyphenyl)-4-oxochromen-7-yl]oxypentoxy]-2-methyl-3,6-dihydro-2h-pyran-3-yl] acetate Chemical compound C1=C[C@@H](OC(C)=O)[C@H](C)O[C@H]1OCCCCCOC1=CC(O)=C2C(=O)C(C=3C=CC(O)=CC=3)=COC2=C1 RRLHMJHRFMHVNM-BQVXCWBNSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001739 density measurement Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000005305 interferometry Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N25/00—Investigating or analyzing materials by the use of thermal means
- G01N25/16—Investigating or analyzing materials by the use of thermal means by investigating thermal coefficient of expansion
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- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials Using Thermal Means (AREA)
Abstract
The utility model provides an utilize device of micromechanics tester test micro sample coefficient of thermal expansion, includes lower heating platform and last heating platform, lower heating platform upper surface be provided with the silicon chip, the sample has been placed to the positive central upper surface of silicon chip, is located the silicon chip upper surface sample outside and is provided with the support object, support object top set up heating platform, leave the space between the last heating platform that is located the sample top, for hollow out construction, pass the space and be provided with the pressure head, the pressure head be located the sample top. The device combines the nano mechanical tester and the high-temperature table, realizes the measurement of the thermal expansion coefficient by using the nano mechanical tester, and expands the application of the nano mechanical tester.
Description
Technical Field
The invention relates to the technical field of solid material thermal property evaluation, in particular to a device for testing the thermal expansion coefficient of a micro sample by using a nano mechanical tester.
Background
The phenomena of thermal expansion and cold contraction of objects are common in nature. The main parameter that measures the thermal expansion of an object is the coefficient of thermal expansion of the material that makes up the object. The coefficient of thermal expansion of a material is one of the fundamental thermophysical parameters of a substance and is an important characteristic quantity characterizing the properties of the material. The thermal expansion coefficient of the material is accurately measured, and the method has important significance for basic scientific research, technical innovation and engineering application. There are many methods for testing the thermal expansion coefficient of materials, such as dial indicator method, optical lever method, mechanical lever method, inductance method, capacitance method, direct observation method, optical interferometry method, X-ray method, density measurement method, etc.
With the rapid development of technology, functional apparatuses are increasingly miniaturized, and applications of micro materials are also becoming wider. Taking film materials as an example, the film materials have been widely used in various fields of the high and new technology industry due to their unique structures and properties. The film material also has the thermal expansion and contraction phenomenon, and in the temperature changing process, the film thermal stress caused by the difference of the thermal expansion coefficients of the film and the substrate not only can influence the performance of the film device, but also can cause deformation, cracking, even damage and failure of the device, thereby seriously influencing the performance and the service life of the film device. Therefore, research on the thermal expansion performance of the film material has important scientific guiding significance for optimizing the structure of the film device, improving the thermal stability of the device and prolonging the service life of the device. A great deal of research has shown that the coefficient of thermal expansion of the film material is not exactly the same as that of the bulk material and therefore cannot be replaced with each other, and that the coefficient of thermal expansion of the same film material may be different by different processes, so that it is necessary to measure the coefficient of thermal expansion of the film material.
For the test requirements of micro-test samples of similar film materials for thermal expansion coefficient, a series of methods have been developed, of which the X-Ray Diffraction (XRD) method and the thermally induced bending (THERMALLY INDUCED BENDING, TIB) method are most commonly used. Taking the test of film materials as an example, the X-ray diffraction method is to obtain the change relation of the 2 theta angle of a characteristic peak along with the temperature by measuring the X-ray diffraction patterns of the film at different temperatures, and then calculate the thermal expansion coefficient of the film according to a formula; the heat-induced bending method is an indirect test method, by measuring the curvature radius change before and after the temperature rise of a film-substrate system, calculating the critical thermal stress generated by the temperature change by adopting a Stony formula, and then calculating the thermal expansion coefficient of the film according to the thermal stress formula. Other testing methods have limitations, or are only suitable for certain special materials, or have special requirements on the shape of the sample, or require special treatment on the surface of the sample, or require the prediction of many other mechanical parameters, or complex sample preparation, so that development of new testing methods is needed. Therefore, we develop a method for testing the thermal expansion coefficient of the micro sample by using the nano mechanical tester, and see patent No. 201910462583.2 for details. However, the nano mechanical tester does not have a function of testing the thermal expansion coefficient, and the original high-temperature device cannot realize free expansion of the sample in the heating process, that is, cannot realize measurement of the thermal expansion coefficient, so that a device suitable for testing the thermal expansion coefficient by the nano mechanical tester is needed.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention aims to provide a device for testing the thermal expansion coefficient of a micro sample by using a nano mechanical tester, and the device is combined with the nano mechanical tester and a high-temperature table, so that the measurement of the thermal expansion coefficient by using the nano mechanical tester is realized, and the application of the nano mechanical tester is expanded.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows:
the utility model provides an utilize device of micromechanics tester test micro sample coefficient of thermal expansion, includes lower heating platform 1 and last heating platform 2, lower heating platform 1 upper surface be provided with silicon chip 6, sample 3 has been placed to the centre upper surface of silicon chip 6, is located the sample 3 outside of silicon chip 6 upper surface and is provided with support object 4, support object 4 top set up heating platform 2, leave the space between the last heating platform 2 that is located sample 3 top, be hollow out construction, pass the space and be provided with pressure head 5, pressure head 5 be located sample 3 top.
The support 4 is greater than the inflated height of the sample 3.
The distance between the support object 4 and the sample 3 is larger than the sum of the horizontal expansion amounts of the support object 4 and the sample 3.
The total height of the support 4 and the silicon wafer 6 should be less than 4mm.
The sample 3 is in a wedge-shaped structure or a step-shaped structure.
The silicon chip 6 and the sample 3 are fixed by high-temperature glue.
The invention has the beneficial effects that:
the device which has a simple structure and is convenient to manufacture, can realize free expansion of the sample and does not have adverse effect on the height Wen Tai is provided, and the device is combined with the nano mechanical tester and the high-temperature table, so that the measurement of the thermal expansion coefficient by using the nano mechanical tester is realized, and the application of the nano mechanical tester is expanded.
Drawings
Fig. 1 is a schematic illustration of a prior art high Wen Tai.
Fig. 2 is a schematic view of the apparatus of the present invention.
Detailed Description
The invention is described in further detail below with reference to the accompanying drawings.
The device is matched with a Haishuang (Bruce) TI 950 nano mechanical tester and xSol800 high Wen Tai for use.
Referring to fig. 2, the present invention is an apparatus for testing thermal expansion coefficient of a nano mechanical tester, comprising: silicon wafer 6, supporting object 4, high temperature glue and specially designed sample.
Sample 3 was fixed to silicon wafer 6 with a high temperature glue.
The support 4 is chosen to be of suitable dimensions, with the upper and lower surfaces as flat as possible and to have a height greater than the inflated height of the sample 3.
The support 4 is placed on the silicon wafer 6 (in order to make the whole system more stable, it is placed as much as possible with the sample as a center symmetry) at a distance from the sample that is greater than the sum of the horizontal expansion of the support 4 and the sample. The support 4 is clamped together with the silicon wafer 6 between the upper and lower heating stages to be fixed.
In order to make the temperature of the sample 3 more uniform and the test result more stable, the total height of the support 4 and the silicon wafer 6 should be less than 4mm.
The ram 5 is used to measure the expansion of the sample and is heated with the sample 3.
In order to remove the influence of creep of the sample 3, thermal expansion of the sample table and the pressure head and the like on the measured value, the position needs to be replaced for measurement again, and a certain height difference is needed for the two measurement positions, and the application number is 201910462583.2.
For accurate measurement of force and displacement, the nano mechanical tester requires the sample to be fixed, and the original height Wen Tai is to clamp the sample between an upper heating table and a lower heating table to fix the sample, as shown in fig. 1. However, this fixing of the sample tends to affect the free expansion of the sample, and in order to allow the sample to expand freely, the application places a higher object beside the sample 3, leaving sufficient expansion space in the upper part of the sample 3. Second, sample 3 needs to be fixed. However, directly adhering the sample 3 to the lower heating stage would damage the apparatus, so that the sample 3 is fixed to the silicon wafer 6 by using a high temperature glue (note that the highest temperature of the test is lower than the temperature that the high temperature glue can withstand), and then the silicon wafer 6 (with the sample 3 adhered thereto) and the object higher beside the sample 3 are clamped together between the upper and lower heating stages to fix them, as shown in fig. 2. The silicon wafer 6 is selected because the silicon wafer is relatively easy to obtain, the surface of the silicon wafer 6 is sufficiently flat, and the thermal expansion coefficient of the silicon is small.
The structure of the invention has the main advantages that: the force and displacement are accurately measured, the free expansion of the sample is realized, and the adverse effect on the original height Wen Tai is avoided.
In summary, the present invention is directed to such a situation: the original high-temperature device of the nano mechanical tester can not realize free expansion of the sample in the heating process, namely, the measurement of the thermal expansion coefficient can not be realized. The device can realize free expansion of the sample without adverse effect on the height Wen Tai, combines the nano mechanical tester and the high-temperature table, realizes measurement of the thermal expansion coefficient by using the nano mechanical tester, expands the application of the nano mechanical tester, and cannot be realized by the original high-temperature device of the nano mechanical tester.
Claims (2)
1. The device for testing the thermal expansion coefficient of the micro sample by using the nano mechanical tester is characterized by comprising a lower heating table (1) and an upper heating table (2), wherein a silicon wafer (6) is arranged on the upper surface of the lower heating table (1), a sample (3) is placed on the central upper surface of the silicon wafer (6), a supporting object (4) is arranged on the outer side of the sample (3) on the upper surface of the silicon wafer (6), the upper heating table (2) is arranged on the top of the supporting object (4), a gap is reserved between the upper heating tables 2 above the sample 3, the hollow structure is formed, a pressure head 5 is arranged through the gap, and the pressure head 5 is positioned above the sample 3;
The supporting object (4) is larger than the expanded height of the sample (3);
the distance between the supporting object (4) and the sample (3) is larger than the sum of the horizontal expansion amounts of the supporting object (4) and the sample (3);
The total height of the supporting object (4) and the silicon wafer (6) is smaller than 4mm;
the sample (3) is of a wedge-shaped structure or a step-shaped structure.
2. The device for testing the thermal expansion coefficient of the micro sample by using the nano mechanical tester according to claim 1, wherein the silicon wafer (6) and the sample (3) are fixed by high-temperature glue.
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| CN202010628069.4A CN111650237B (en) | 2020-07-01 | 2020-07-01 | Device for testing thermal expansion coefficient of micro sample by using nano mechanical tester |
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| CN202010628069.4A CN111650237B (en) | 2020-07-01 | 2020-07-01 | Device for testing thermal expansion coefficient of micro sample by using nano mechanical tester |
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| CN111650237A CN111650237A (en) | 2020-09-11 |
| CN111650237B true CN111650237B (en) | 2024-07-12 |
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| CN112525948B (en) * | 2020-11-19 | 2024-01-09 | 西安交通大学 | Method for realizing three glass transition temperatures by using nano mechanical tester |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105973926A (en) * | 2016-04-28 | 2016-09-28 | 华南理工大学 | Apparatus for measuring thermal expansion coefficient of powder material, and method thereof |
| CN107621475A (en) * | 2017-11-08 | 2018-01-23 | 北京亦庄材料基因研究院有限公司 | A kind of thermal coefficient of expansion high pass amount detecting device and its control method |
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| JP3848442B2 (en) * | 1997-08-20 | 2006-11-22 | 株式会社日立国際電気 | HEATER SUPPORT DEVICE, SEMICONDUCTOR MANUFACTURING DEVICE, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
| JP3883724B2 (en) * | 1999-01-18 | 2007-02-21 | エスアイアイ・ナノテクノロジー株式会社 | Thermomechanical measuring apparatus and method |
| RU2392611C1 (en) * | 2009-06-03 | 2010-06-20 | Федеральное государственное унитарное предприятие федеральный научно-производственный центр "Научно-исследовательский институт измерительных систем им. Ю.Е. Седакова" | Method of measuring coefficient of thermal expansion of film specimens |
| CN203270022U (en) * | 2013-05-17 | 2013-11-06 | 合肥科晶材料技术有限公司 | Long-distance adjustable quick heating/cooling type evaporation furnace |
| CN107796845A (en) * | 2017-09-05 | 2018-03-13 | 西南科技大学 | The measurement apparatus and method of a kind of solid material thermal expansion coefficient |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105973926A (en) * | 2016-04-28 | 2016-09-28 | 华南理工大学 | Apparatus for measuring thermal expansion coefficient of powder material, and method thereof |
| CN107621475A (en) * | 2017-11-08 | 2018-01-23 | 北京亦庄材料基因研究院有限公司 | A kind of thermal coefficient of expansion high pass amount detecting device and its control method |
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