CN111644750A - Laser marking method, device and system - Google Patents
Laser marking method, device and system Download PDFInfo
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- CN111644750A CN111644750A CN202010560208.4A CN202010560208A CN111644750A CN 111644750 A CN111644750 A CN 111644750A CN 202010560208 A CN202010560208 A CN 202010560208A CN 111644750 A CN111644750 A CN 111644750A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
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Abstract
The invention provides a laser marking method, a laser marking device and a laser marking system, wherein laser beams adopted in the laser marking process are optimally designed, namely the laser beams comprise a first region to an Nth region which are sequentially surrounded from the center to the outside on a section which is vertical to the irradiation direction of the laser beams, and the power of at least one region from the first region to the Nth region is different from that of the rest regions. The power of different areas of the laser beam is optimized, so that the surface of the device structure can be ablated by the areas with different powers to form a preset pattern mark, the overall power of the laser beam is reduced, and the loss of laser energy is reduced; meanwhile, the probability of burning through the device structure by the laser beam is reduced, the purpose of avoiding the condition of damaging the device structure in the laser marking process is achieved, and the condition of reliability failure caused by burning of the laser beam on the internal functional device of the device structure is avoided.
Description
Technical Field
The invention relates to the technical field of laser marking, in particular to a laser marking method, device and system.
Background
The laser is a light source which utilizes stimulated radiation (energy level transition), has high brightness and high energy, and has excellent performance indexes of single color, single direction, single phase and other frequencies and directions. Compared with a common light source, the directional illumination of the LED lamp is ten million times stronger than that of the common light source; secondly, the energy is highly concentrated and can act on a tiny point, the light wave is absorbed by the material to generate instantaneous high pressure and high temperature, and the temperature can reach as high as tens of thousands to millions of degrees; thirdly, the wavelength is limited to a spectrum band of less than ten-thousandth of nanometer, and the monochromaticity is excellent; fourthly, the coherence is good, and the interference phenomenon of light rays with different frequencies is small. The laser light is also light, and its energy is concentrated, but its temperature is not high. The laser marking method utilizes the excellent characteristics of laser, and through laser irradiation, the irradiated part on the surface of the material absorbs the energy of light waves and is converted into heat energy, high pressure and high temperature are instantly generated, and the material is ablated, so that a mark is etched. However, the existing laser marking method is easy to damage the device structure.
Disclosure of Invention
In view of this, the invention provides a laser marking method, device and system, which effectively solve the technical problems existing in the prior art, avoid the situation of damaging the device structure in the laser marking process, and simultaneously reduce the loss of laser energy.
In order to achieve the purpose, the technical scheme provided by the invention is as follows:
a laser marking method, comprising:
providing a device structure, an outer surface of the device structure comprising a marker region;
the laser beam is used for burning the mark area to form a preset pattern mark, wherein the laser beam comprises a first area to an Nth area which are sequentially surrounded from the center to the outside on a section which is vertical to the irradiation direction of the laser beam, the power of at least one area in the first area to the Nth area is different from that of the rest areas, and N is an integer not less than 2.
Optionally, on a cross section perpendicular to the irradiation direction of the laser beam, the power of the laser beam from the center to the outside of the first region to the nth region tends to increase.
Optionally, the forming the predetermined pattern mark by burning the mark region with a laser beam includes:
and burning the marking region by using a laser beam to form a groove-shaped preset pattern mark.
Optionally, the forming the predetermined pattern mark by burning the mark region with a laser beam includes:
and burning the region to be burned of the mark region at least once through the laser beam to form a preset pattern mark.
Correspondingly, the invention also provides a laser marking device, which comprises:
a fixture for holding a device structure, an outer surface of the device structure including a marking region;
and the laser is used for outputting a laser beam, and the marking region is burned through the laser beam to form a preset pattern mark, wherein the laser beam comprises a first region to an Nth region which are sequentially surrounded from the center to the outside on a section which is vertical to the irradiation direction of the laser beam, at least one region from the first region to the Nth region has different power with the rest regions, and N is an integer not less than 2.
Optionally, on a cross section perpendicular to the irradiation direction of the laser beam, the power of the laser beam from the center to the outside of the first region to the nth region tends to increase.
Optionally, the laser includes a laser output end and a transmittance adjustment layer located at the laser output end side;
the transmittance adjusting layer comprises a first transmittance layer to an Nth transmittance layer, the ith transmittance layer corresponds to the ith area, at least one transmittance layer in the first transmittance layer to the Nth transmittance layer has different transmittance from the rest transmittance layers, and i is a positive integer not greater than N.
Optionally, the device structure is a semiconductor device structure.
Optionally, the semiconductor device structure is a semiconductor memory.
Correspondingly, the invention also provides a laser marking system which comprises the laser marking device.
Compared with the prior art, the technical scheme provided by the invention at least has the following advantages:
the invention provides a laser marking method, a laser marking device and a laser marking system, wherein the laser marking device comprises: providing a device structure, an outer surface of the device structure comprising a marker region; the laser beam is used for burning the mark area to form a preset pattern mark, wherein the laser beam comprises a first area to an Nth area which are sequentially surrounded from the center to the outside on a section which is vertical to the irradiation direction of the laser beam, the power of at least one area in the first area to the Nth area is different from that of the rest areas, and N is an integer not less than 2.
According to the technical scheme provided by the invention, the laser beam adopted in the laser marking process is optimally designed, namely the laser beam comprises a first region to an Nth region which are sequentially surrounded from the center to the outside on a section which is vertical to the irradiation direction of the laser beam, and the power of at least one region in the first region to the Nth region is different from that of the rest regions. The power of different areas of the laser beam is optimized, so that the surface of the device structure can be ablated by the areas with different powers to form a preset pattern mark, the overall power of the laser beam is reduced, and the loss of laser energy is reduced; meanwhile, the probability of burning through the device structure by the laser beam is reduced, the purpose of avoiding the condition of damaging the device structure in the laser marking process is achieved, and the condition of reliability failure caused by burning of the laser beam on the internal functional device of the device structure is avoided.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a flowchart of a laser marking method according to an embodiment of the present invention;
fig. 2 is a schematic diagram of power distribution of a laser beam according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a preset pattern mark according to an embodiment of the present invention;
FIG. 4 is a cross-sectional view along AA' of FIG. 3;
fig. 5 is a schematic structural diagram of a laser marking apparatus according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of a laser according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As described in the background art, laser is a light source that uses stimulated radiation (energy level transition), has high brightness and high energy, and has excellent performance indexes of monochromatic, unidirectional, single-phase, and other frequency and direction. Compared with a common light source, the directional illumination of the LED lamp is ten million times stronger than that of the common light source; secondly, the energy is highly concentrated and can act on a tiny point, the light wave is absorbed by the material to generate instantaneous high pressure and high temperature, and the temperature can reach as high as tens of thousands to millions of degrees; thirdly, the wavelength is limited to a spectrum band of less than ten-thousandth of nanometer, and the monochromaticity is excellent; fourthly, the coherence is good, and the interference phenomenon of light rays with different frequencies is small. The laser light is also light, and its energy is concentrated, but its temperature is not high. The laser marking method utilizes the excellent characteristics of laser, and through laser irradiation, the irradiated part on the surface of the material absorbs the energy of light waves and is converted into heat energy, high pressure and high temperature are instantly generated, and the material is ablated, so that a mark is etched. However, the existing laser marking method is easy to damage the device structure.
Based on the above, the invention provides a laser marking method, device and system, which effectively solve the technical problems in the prior art, avoid the situation of damaging the device structure in the laser marking process and simultaneously reduce the loss of laser energy.
In order to achieve the above object, the technical solutions provided by the present invention are described in detail below, specifically with reference to fig. 1 to 6.
Referring to fig. 1, a flowchart of a laser marking method according to an embodiment of the present invention is shown, where the laser marking method includes:
s1, providing a device structure, wherein the outer surface of the device structure comprises a marking area;
s2, burning the mark region through a laser beam to form a preset pattern mark, wherein the laser beam comprises a first region to an Nth region which are sequentially surrounded from the center to the outside on a cross section perpendicular to the irradiation direction of the laser beam, the power of at least one region in the first region to the Nth region is different from that of the rest regions, and N is an integer not less than 2.
It can be understood that, according to the technical scheme provided by the invention, the laser beam adopted in the laser marking process is optimally designed, that is, the laser beam comprises a first region to an Nth region which are sequentially surrounded from the center to the outside on a cross section perpendicular to the irradiation direction of the laser beam, and the power of at least one region in the first region to the Nth region is different from that of the rest regions. The power of different areas of the laser beam is optimized, so that the surface of the device structure can be ablated by the areas with different powers to form a preset pattern mark, the overall power of the laser beam is reduced, and the loss of laser energy is reduced; meanwhile, the probability of burning through the device structure by the laser beam is reduced, the purpose of avoiding the condition of damaging the device structure in the laser marking process is achieved, and the condition of reliability failure caused by burning of the laser beam on the internal functional device of the device structure is avoided.
In an embodiment of the present invention, at least one of the first region to the nth region of the laser beam provided by the present invention has a different power from the rest of the regions, and specifically, the power of all the regions may be different, which does not specifically limit the present invention. And, the power of the first area to the nth area provided by the embodiment of the present invention may be respectively changed regularly or distributed irregularly, and the present invention is not limited in particular. Preferably, in a cross section perpendicular to the irradiation direction of the laser beam provided in the embodiment of the present invention, the power of the laser beam increases from the center to the outside in the first region to the nth region.
Specifically, referring to fig. 2, a schematic diagram of power distribution of a laser beam provided by an embodiment of the present invention is shown, wherein the laser beam includes a first region 111 to a fifth region 115 for explanation, the first region 111 is located at a center of a cross section of the laser beam, and the first region 111 to the fifth region 115 sequentially surround the first region 111 and the fifth region 115 in a direction from the first region 111 to the fifth region 115. In the embodiment of the present invention, the power of the first area 111 to the fifth area 115 tends to increase, for example, the power corresponding to the first area 111 may be 5W, the power corresponding to the second area 112 may be 6W, the power corresponding to the third area 113 may be 7W, the power corresponding to the fourth area 114 may be 8W, and the power corresponding to the fifth area 115 may be 9W.
It should be noted that the power of the first area to the nth area provided by the embodiment of the present invention is in an increasing trend, the increasing trend may be a trend of sequentially increasing a fixed power value, or may be a trend of increasing a disordered power value, and the present invention is not limited specifically.
It can be understood that, because the laser power is higher, a better burning effect can be realized, so the embodiment of the invention sets the power from the first area to the Nth area in an increasing trend, and further makes the power of the peripheral area of the laser beam have a larger value, thereby ensuring that the laser beam has an effect of larger burning area, improving the burning efficiency of the laser beam, and further reducing the loss of laser energy.
In an embodiment of the present invention, the predetermined pattern mark provided by the present invention may be a solid mark or a groove mark, and the specific selection is performed according to the actual application. Preferably, the preset pattern mark provided in the embodiment of the present invention is a groove mark, that is, a laser beam is used to burn the mark region to form the preset pattern mark, and the method includes:
and burning the marking region by using a laser beam to form a groove-shaped preset pattern mark.
Specifically, referring to fig. 3 and 4, fig. 3 is a schematic structural diagram of a preset pattern mark according to an embodiment of the present invention; FIG. 4 is a cross-sectional view along the direction AA' in FIG. 3, in which the predetermined pattern marks are used as an example for explaining the present invention. The device structure provided by the embodiment of the invention comprises a marking area 101, wherein a preset pattern mark 102 manufactured by adopting the laser marking method provided by any one of the above embodiments is formed in the marking area 101, and the preset pattern mark 102 is a groove mark.
That is, when the groove-shaped predetermined pattern mark 102 is formed, the laser beam directly burns the corresponding predetermined pattern mark 102 at the mark region 101, so as to form a groove mark, that is, a frame-type mark, at the predetermined pattern mark 102.
It can be understood that, in the technical solution provided by the embodiment of the present invention, the groove-shaped predetermined pattern mark (i.e. the frame-type predetermined pattern mark) is formed, and only the laser burning is required to be performed on the predetermined pattern mark, so that the predetermined pattern mark is easy to be burned, and the laser energy loss can be further reduced.
In an embodiment of the present invention, when the mark region is burned by a laser beam to form a predetermined pattern mark, the method includes:
and burning the region to be burned of the mark region at least once through the laser beam to form a preset pattern mark.
It can be understood that, when the preset pattern mark provided by the embodiment of the present invention is a groove mark at the mark region, the region to be cauterized is a region corresponding to the preset pattern mark; and when the preset pattern mark provided by the embodiment of the invention is an entity mark, the region to be cauterized is the region except the corresponding position of the preset pattern mark at the mark region.
In addition, the laser marking method provided by the embodiment of the invention needs to select the burning times of the region to be burned according to the shape of the preset pattern mark, and if the region to be burned comprises simple figures such as numbers and letters, the laser marking method can burn the region to be burned corresponding to the simple figures such as the numbers and the letters for a few times; if the region to be cauterized comprises the complex pattern, the region to be cauterized corresponding to the complex pattern is selected to be cauterized for a plurality of times, wherein when the region to be cauterized is cauterized for a plurality of times, the parameters of the laser beam can be set before each cauterization according to the requirement, and the requirement is specifically designed according to the practical application.
Correspondingly, an embodiment of the present invention further provides a laser marking device, which is shown in fig. 5 and is a schematic structural diagram of the laser marking device provided in the embodiment of the present invention, wherein the laser marking device includes:
a fixture 100, the fixture 100 for holding a device structure, an outer surface of the device structure including a marking region;
and the laser 200 is used for outputting a laser beam, and the laser beam burns the mark region to form a preset pattern mark, wherein the laser beam comprises a first region to an Nth region which are sequentially surrounded from the center to the outside on a cross section perpendicular to the irradiation direction of the laser beam, at least one region in the first region to the Nth region has different power from the rest regions, and N is an integer not less than 2.
Referring to fig. 6, a schematic structural diagram of a laser according to an embodiment of the present invention is provided, where the laser includes a laser output end 210 and a transmittance adjustment layer located at a side of the laser output end.
The transmittance adjustment layer includes a first transmittance layer 221 to an nth transmittance layer 22N, the ith transmittance layer corresponds to the ith region, at least one of the first transmittance layer 221 to the nth transmittance layer 22N has a transmittance different from that of the remaining transmittance layers, and i is a positive integer not greater than N.
It can be understood that, by arranging the transmittance adjusting layer on one side of the output direction of the laser output end, when the laser output end outputs light beams with uniform power, the light beam transmittance of the corresponding area of the laser output end is adjusted through the different transmittance layers, and the purpose of adjusting the power of the light beams output by the corresponding area of the transmittance layer is further achieved. By carrying out preset adjustment on the transmittance of the layers with different transmittances, the laser beam output by the laser finally comprises a first region to an Nth region from the center to the outside, and at least one region has different power from the rest of the regions.
The present invention is not limited to obtaining a desired laser beam by using the laser structure shown in fig. 6. In other embodiments of the present invention, the driving of the laser may be adjusted to obtain a laser beam including the first region to the nth region, that is, the resonant frequency in the multi-frequency laser cavity may be designed, and the frequency interval between two adjacent longitudinal modes is greater than the width of the hole and the hole burning at each frequency is ensured to be independent of each other. According to the lamb dip rule, laser beams with different power widths and power sizes can be adjusted.
In an embodiment of the invention, on a cross section perpendicular to an irradiation direction of the laser beam, power of the laser beam increases from the center to the outside of the first region to the nth region. That is, when the laser shown in fig. 6 is used in the present invention, the higher the transmittance of the transmittance layer is, the higher the output beam power of the corresponding region is, so that the transmittances of the first transmittance layer to the nth transmittance layer of the transmittance adjustment layer tend to increase.
In any of the above embodiments of the present invention, the device structure provided by the present invention may be a semiconductor device structure. The semiconductor device structure provided by the embodiment of the invention can be a semiconductor memory, wherein the laser marking method and the laser marking device provided by the embodiment are used for carrying out laser marking on the semiconductor memory, so that the burning influence on chips in the semiconductor memory during laser marking can be avoided, and the high reliability of the semiconductor memory is ensured.
Correspondingly, the embodiment of the invention also provides a laser marking system which comprises the laser marking device provided by any one of the embodiments.
The invention provides a laser marking method, a laser marking device and a laser marking system, wherein the laser marking device comprises: providing a device structure, an outer surface of the device structure comprising a marker region; the laser beam is used for burning the mark area to form a preset pattern mark, wherein the laser beam comprises a first area to an Nth area which are sequentially surrounded from the center to the outside on a section which is vertical to the irradiation direction of the laser beam, the power of at least one area in the first area to the Nth area is different from that of the rest areas, and N is an integer not less than 2.
According to the technical scheme provided by the invention, the laser beam adopted in the laser marking process is optimally designed, namely the laser beam comprises a first region to an Nth region which are sequentially surrounded from the center to the outside on a section which is vertical to the irradiation direction of the laser beam, and the power of at least one region in the first region to the Nth region is different from that of the rest regions. The power of different areas of the laser beam is optimized, so that the surface of the device structure can be ablated by the areas with different powers to form a preset pattern mark, the overall power of the laser beam is reduced, and the loss of laser energy is reduced; meanwhile, the probability of burning through the device structure by the laser beam is reduced, the purpose of avoiding the condition of damaging the device structure in the laser marking process is achieved, and the condition of reliability failure caused by burning of the laser beam on the internal functional device of the device structure is avoided.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A laser marking method, comprising:
providing a device structure, an outer surface of the device structure comprising a marker region;
the laser beam is used for burning the mark area to form a preset pattern mark, wherein the laser beam comprises a first area to an Nth area which are sequentially surrounded from the center to the outside on a section which is vertical to the irradiation direction of the laser beam, the power of at least one area in the first area to the Nth area is different from that of the rest areas, and N is an integer not less than 2.
2. The laser marking method according to claim 1, wherein the laser beam has a power increasing tendency from the center to the outside of the first region to the nth region in a cross section perpendicular to the irradiation direction thereof.
3. The laser marking method as claimed in claim 1, wherein firing the marking region by a laser beam to form a predetermined pattern mark comprises:
and burning the marking region by using a laser beam to form a groove-shaped preset pattern mark.
4. The laser marking method as claimed in claim 1, wherein firing the marking region by a laser beam to form a predetermined pattern mark comprises:
and burning the region to be burned of the mark region at least once through the laser beam to form a preset pattern mark.
5. A laser marking device, characterized in that the laser marking device comprises:
a fixture for holding a device structure, an outer surface of the device structure including a marking region;
and the laser is used for outputting a laser beam, and the marking region is burned through the laser beam to form a preset pattern mark, wherein the laser beam comprises a first region to an Nth region which are sequentially surrounded from the center to the outside on a section which is vertical to the irradiation direction of the laser beam, at least one region from the first region to the Nth region has different power with the rest regions, and N is an integer not less than 2.
6. The laser marking device according to claim 5, wherein the laser beam has a power increasing tendency from the center to the outside of the first region to the nth region in a cross section perpendicular to the irradiation direction of the laser beam.
7. The laser marking device according to claim 5, wherein the laser includes a laser output end and a transmittance adjustment layer on a side of the laser output end;
the transmittance adjusting layer comprises a first transmittance layer to an Nth transmittance layer, the ith transmittance layer corresponds to the ith area, at least one transmittance layer in the first transmittance layer to the Nth transmittance layer has different transmittance from the rest transmittance layers, and i is a positive integer not greater than N.
8. Laser marking apparatus according to claim 5, wherein the device structure is a semiconductor device structure.
9. The laser marking apparatus according to claim 8, wherein the semiconductor device structure is a semiconductor memory.
10. A laser marking system comprising a laser marking device according to any one of claims 5 to 8.
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| CN103862169A (en) * | 2012-12-12 | 2014-06-18 | 中芯国际集成电路制造(上海)有限公司 | Laser annealing device and method |
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| CN106877128A (en) * | 2017-04-19 | 2017-06-20 | 江苏师范大学 | A kind of wavelength tunable solid laser being easily integrated |
| US20190176269A1 (en) * | 2017-12-11 | 2019-06-13 | Asti Global Inc., Taiwan | Laser engraving device |
| CN110076460A (en) * | 2019-05-28 | 2019-08-02 | 中国科学院宁波材料技术与工程研究所 | The controllable coupled laser processing unit (plant) of space multiple beam and method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103862169A (en) * | 2012-12-12 | 2014-06-18 | 中芯国际集成电路制造(上海)有限公司 | Laser annealing device and method |
| CN106552997A (en) * | 2015-09-23 | 2017-04-05 | 乐凯华光印刷科技有限公司 | Based on the method that mechanism of ultrashort-pulse laser ablation principle is processed to sheet metal sand screen mesh |
| CN106877128A (en) * | 2017-04-19 | 2017-06-20 | 江苏师范大学 | A kind of wavelength tunable solid laser being easily integrated |
| US20190176269A1 (en) * | 2017-12-11 | 2019-06-13 | Asti Global Inc., Taiwan | Laser engraving device |
| CN110076460A (en) * | 2019-05-28 | 2019-08-02 | 中国科学院宁波材料技术与工程研究所 | The controllable coupled laser processing unit (plant) of space multiple beam and method |
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