CN111599508A - Electrode slurry - Google Patents
Electrode slurry Download PDFInfo
- Publication number
- CN111599508A CN111599508A CN201910129049.XA CN201910129049A CN111599508A CN 111599508 A CN111599508 A CN 111599508A CN 201910129049 A CN201910129049 A CN 201910129049A CN 111599508 A CN111599508 A CN 111599508A
- Authority
- CN
- China
- Prior art keywords
- parts
- electrode slurry
- powder
- weight
- slurry according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011267 electrode slurry Substances 0.000 title claims abstract description 23
- 239000000843 powder Substances 0.000 claims abstract description 59
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 57
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 40
- 239000000956 alloy Substances 0.000 claims abstract description 40
- 239000011230 binding agent Substances 0.000 claims abstract description 34
- 239000002245 particle Substances 0.000 claims description 29
- 229920002396 Polyurea Polymers 0.000 claims description 24
- 239000002562 thickening agent Substances 0.000 claims description 18
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 16
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 16
- 239000006254 rheological additive Substances 0.000 claims description 14
- 229910052709 silver Inorganic materials 0.000 claims description 13
- 239000004332 silver Substances 0.000 claims description 13
- 239000004094 surface-active agent Substances 0.000 claims description 11
- 239000010949 copper Substances 0.000 claims description 10
- 229910000765 intermetallic Inorganic materials 0.000 claims description 10
- 239000012752 auxiliary agent Substances 0.000 claims description 9
- 229910003069 TeO2 Inorganic materials 0.000 claims description 8
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(III) oxide Inorganic materials O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims description 8
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 claims description 8
- FUJCRWPEOMXPAD-UHFFFAOYSA-N Li2O Inorganic materials [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 claims description 7
- 239000004359 castor oil Substances 0.000 claims description 7
- 235000019438 castor oil Nutrition 0.000 claims description 7
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 claims description 7
- ZEMPKEQAKRGZGQ-XOQCFJPHSA-N glycerol triricinoleate Natural products CCCCCC[C@@H](O)CC=CCCCCCCCC(=O)OC[C@@H](COC(=O)CCCCCCCC=CC[C@@H](O)CCCCCC)OC(=O)CCCCCCCC=CC[C@H](O)CCCCCC ZEMPKEQAKRGZGQ-XOQCFJPHSA-N 0.000 claims description 7
- 229920005989 resin Polymers 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 6
- 239000001856 Ethyl cellulose Substances 0.000 claims description 5
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 5
- 229920006217 cellulose acetate butyrate Polymers 0.000 claims description 5
- 229920001249 ethyl cellulose Polymers 0.000 claims description 5
- 235000019325 ethyl cellulose Nutrition 0.000 claims description 5
- 239000003960 organic solvent Substances 0.000 claims description 5
- 229920000178 Acrylic resin Polymers 0.000 claims description 4
- 239000004925 Acrylic resin Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052797 bismuth Inorganic materials 0.000 claims description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052714 tellurium Inorganic materials 0.000 claims description 4
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 239000004952 Polyamide Substances 0.000 claims description 3
- 150000001412 amines Chemical class 0.000 claims description 3
- 229920002647 polyamide Polymers 0.000 claims description 3
- 238000005245 sintering Methods 0.000 abstract description 52
- 238000000034 method Methods 0.000 abstract description 14
- 230000008569 process Effects 0.000 abstract description 13
- 239000002003 electrode paste Substances 0.000 abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 abstract description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- 238000004134 energy conservation Methods 0.000 abstract description 4
- 238000005265 energy consumption Methods 0.000 abstract description 4
- 230000007613 environmental effect Effects 0.000 abstract description 4
- 239000002002 slurry Substances 0.000 abstract description 4
- 230000002035 prolonged effect Effects 0.000 abstract description 2
- 239000000203 mixture Substances 0.000 description 11
- 239000002904 solvent Substances 0.000 description 10
- 238000011084 recovery Methods 0.000 description 8
- 229910001128 Sn alloy Inorganic materials 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000009766 low-temperature sintering Methods 0.000 description 6
- QZCHKAUWIRYEGK-UHFFFAOYSA-N tellanylidenecopper Chemical compound [Te]=[Cu] QZCHKAUWIRYEGK-UHFFFAOYSA-N 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- 150000002148 esters Chemical class 0.000 description 5
- 239000007791 liquid phase Substances 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 229910002531 CuTe Inorganic materials 0.000 description 4
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 4
- 238000007665 sagging Methods 0.000 description 4
- PAAZPARNPHGIKF-UHFFFAOYSA-N 1,2-dibromoethane Chemical compound BrCCBr PAAZPARNPHGIKF-UHFFFAOYSA-N 0.000 description 3
- IFPMZBBHBZQTOV-UHFFFAOYSA-N 1,3,5-trinitro-2-(2,4,6-trinitrophenyl)-4-[2,4,6-trinitro-3-(2,4,6-trinitrophenyl)phenyl]benzene Chemical compound [O-][N+](=O)C1=CC([N+](=O)[O-])=CC([N+]([O-])=O)=C1C1=C([N+]([O-])=O)C=C([N+]([O-])=O)C(C=2C(=C(C=3C(=CC(=CC=3[N+]([O-])=O)[N+]([O-])=O)[N+]([O-])=O)C(=CC=2[N+]([O-])=O)[N+]([O-])=O)[N+]([O-])=O)=C1[N+]([O-])=O IFPMZBBHBZQTOV-UHFFFAOYSA-N 0.000 description 3
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 3
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229940116411 terpineol Drugs 0.000 description 3
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- 229910018030 Cu2Te Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000002671 adjuvant Substances 0.000 description 2
- -1 aldehyde ketone Chemical class 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- JWVAUCBYEDDGAD-UHFFFAOYSA-N bismuth tin Chemical compound [Sn].[Bi] JWVAUCBYEDDGAD-UHFFFAOYSA-N 0.000 description 2
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical class [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 235000014113 dietary fatty acids Nutrition 0.000 description 2
- 229930195729 fatty acid Natural products 0.000 description 2
- 239000000194 fatty acid Substances 0.000 description 2
- 150000004665 fatty acids Chemical class 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- YZASAXHKAQYPEH-UHFFFAOYSA-N indium silver Chemical compound [Ag].[In] YZASAXHKAQYPEH-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 239000003981 vehicle Substances 0.000 description 2
- YYTSGNJTASLUOY-UHFFFAOYSA-N 1-chloropropan-2-ol Chemical compound CC(O)CCl YYTSGNJTASLUOY-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002191 fatty alcohols Chemical class 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229920000609 methyl cellulose Polymers 0.000 description 1
- 239000001923 methylcellulose Substances 0.000 description 1
- 235000010981 methylcellulose Nutrition 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
- H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Conductive Materials (AREA)
- Photovoltaic Devices (AREA)
Abstract
The application discloses electrode paste which comprises the following components in parts by weight: 5-15 parts of an organic carrier; 0.5-5 parts of an inorganic binder; 70-95 parts of conductive powder; the conductive powder comprises the following components in parts by weight: 60-75 parts of silver powder; 10-20 parts of low-melting-point alloy powder. Experiments show that the sintering temperature and the silver powder content of the electrode slurry are reduced by adding the low-melting-point alloy powder, and the sintering temperature is reduced from 750-830 ℃ to 500-650 ℃. The lower electrode sintering temperature can not damage the silicon wafer, the shrinkage degree of the aluminum slurry is slowed down, the warping degree of the solar cell is reduced, and the service life of the cell is prolonged. Meanwhile, the lower sintering temperature reduces the energy consumption in the sintering process and meets the requirements of energy conservation and environmental protection.
Description
Technical Field
The invention relates to the technical field of electronic paste, in particular to electrode paste.
Background
The cost reduction of solar cells depends mainly on the improvement of cell efficiency and the reduction of the cost of materials for manufacturing the cells. The grid line electrode on the front surface of the solar cell is prepared by adopting a high-temperature sintering method after silver paste printing for many years.
At present, the peak value sintering temperature of the front silver paste of the solar cell is 750-830 ℃, and the high sintering temperature indirectly requires that the back silver paste and the back aluminum paste which are matched with the front silver paste can also meet the process requirement of the high sintering temperature. In the sintering process, the silicon wafer is easily damaged by the higher electrode sintering temperature, and the service life of the battery wafer is influenced. Meanwhile, the higher sintering temperature can cause higher energy consumption in the sintering process and can not meet the requirements of energy conservation and environmental protection.
Disclosure of Invention
In view of the above-mentioned drawbacks or deficiencies in the prior art, it would be desirable to provide an electrode paste.
In order to overcome the defects of the prior art, the technical scheme provided by the invention is as follows:
the electrode slurry is characterized by comprising the following components in parts by weight:
5-15 parts of an organic carrier;
0.5-5 parts of an inorganic binder;
70-95 parts of conductive powder;
the conductive powder comprises the following components in parts by weight:
60-75 parts of silver powder;
10-20 parts of low-melting-point alloy powder.
Further, the organic carrier comprises the following components in parts by weight: 72-90 parts of organic solvent, 2-20 parts of thickening agent and 0.5-10 parts of first auxiliary agent; the first aid comprises a surfactant and a rheological aid.
Further, the inorganic binder comprises the following components in parts by weight: 0 to 10 parts of PbO and 10 to 20 parts of Bi2O350-80 parts of TeO21-10 parts of B2O31 to 10 parts of Li2O, 1-10 parts of ZnO and 1-10 parts of WO3。
Furthermore, the softening point of the inorganic binder is 370-450 ℃, and the median particle size of the inorganic binder is less than or equal to 2 μm.
Further, the silver powder is spherical, quasi-spherical or hollow spherical, and the specific surface area of the silver powder is 1-2 m2(ii)/g; the tap density of the silver powder is 2.5-6.5 g/cm3。
Further, the low-melting-point alloy powder is an alloy or intermetallic compound formed by at least two of copper, tellurium, bismuth, tin, indium and silver.
Further, the silver powder has a particle size of 0.2 to 3 μm, and the low melting point alloy powder has a particle size of 0.05 to 0.5 μm.
Further, the surfactant is selected from at least one of fatty alcohol-polyoxyethylene ether, alkylphenol ethoxylate, fatty acid-polyoxyethylene ether, castor oil ethoxylate or fatty amine ethoxylate, and the rheological additive is selected from modified hydrogenated castor oil, polyamide wax or polyurea rheological additive.
Further, the thickener is at least one selected from acrylic resin, polyvinyl butyral resin, ethyl cellulose or cellulose acetate butyrate.
Further, the polyurea type rheological additive is hyperbranched polyurea, and the relative molecular weight of the polyurea type rheological additive is 2500-2800.
Compared with the prior art, the invention has the beneficial effects that:
according to the electrode slurry, the sintering temperature and the silver powder content are reduced by adding the low-melting-point alloy powder, the sintering window is reduced and widened, good contact performance is still achieved at a lower sintering temperature, and an electrode formed through low-temperature sintering has better low-temperature sintering characteristics. The sintering temperature is reduced from 750-830 ℃ to 500-650 ℃. The lower electrode sintering temperature can not damage the silicon wafer, the shrinkage degree of the aluminum paste on the back surface is slowed down, the warping degree of the solar cell is reduced, and the service life of the cell is prolonged. Meanwhile, the lower sintering temperature reduces energy consumption in the sintering process and meets the requirements of energy conservation and environmental protection.
Detailed Description
The present application will be described in further detail with reference to examples. It is to be understood that the specific embodiments described herein are merely illustrative of the relevant invention and not restrictive of the invention.
It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict. The present application will be described in detail with reference to examples.
As mentioned in the background art, the peak sintering temperature of the front silver paste of the solar cell is 750-830 ℃, and the back silver paste and the back aluminum paste which are used in cooperation with the front silver paste are required to meet the process requirement of high sintering temperature indirectly at the high sintering temperature. In the sintering process, the silicon wafer is easily damaged by the higher electrode sintering temperature, and the shrinkage degree of the aluminum slurry can be increased, so that the warping degree of the solar cell is larger, and the service life of the cell is influenced. Meanwhile, higher sintering temperature can cause higher energy consumption in the sintering process and can not meet the requirements of energy conservation and environmental protection.
The following provides an electrode slurry, which comprises the following components in parts by weight: 5-15 parts of organic carrier, 0.5-5 parts of inorganic binder and 70-95 parts of conductive powder;
when the weight part of the conductive powder is less than 70 parts, the addition amount of the conductive particles is too small, and the inherent resistance of the electrode formed after sintering is large; when the conductive powder accounts for more than 95 parts by weight in the electrode paste, the paste viscosity becomes too high, and dispersibility and printability deteriorate.
The inorganic binder increases the binding force of the conductive powder with the substrate, and softens during sintering to facilitate sintering of the conductive powder to reduce the sintering process temperature. The addition amount of the inorganic binder is preferably 0.5 to 5 parts by weight relative to the total weight of the conductive paste. When the amount is less than 0.5 parts by weight, the adhesion strength between the electrode and the substrate may be insufficient. If it exceeds 5 parts by weight, an increase in resistance of the electrode line or a welding defect in a subsequent process may occur.
The softening point of the inorganic binder is 370-450 ℃, and the median particle size of the inorganic binder is less than or equal to 2 μm. Therefore, when the conductive paste is sintered at 500-650 ℃, the inorganic binder has a low softening point, so that the conductive paste is favorable for participating in a reaction of penetrating through an antireflection film in the sintering process of the paste, and the metal electrode layer obtained by low-temperature sintering has good adhesion with a silicon substrate and small contact resistance. When the softening point is between 370 ℃ and 450 ℃, on the one hand, the inorganic binder does not spread excessively, and a normal conductive film structure can be formed. On the other hand, sufficient melt flow occurs during firing, and sufficient adhesive strength can be obtained.
Preferably, the inorganic binder comprises the following components in parts by weight: 0 to 10 portions of PbO and 10 to 20 portions of Bi2O350-80 parts of TeO21-10 parts of B2O31-10 parts of L i2O, 1-10 parts of ZnO and 1-10 parts of WO3。
The conductive powder comprises the following components in parts by weight: 60-75 parts of silver powder; 10-20 parts of low-melting-point alloy powder.
The shape of the silver powder includes, but is not limited to, spherical, spheroidal or hollow spherical shape, and may also be hollow spheroidal or scaly, and the silver powder may also be formed by mixing two or more of the foregoing different shapes.
The specific surface area of the silver powder is 0.05-5 m2The preferable scheme is that the specific surface area of the silver powder is 1-2 m2(ii)/g; the tap density of the silver powder is 2.5-6.5 g/cm3Preferably, the tap density is 3.5-5.5 g/cm3。
The average particle diameter of the conductive powder affects the sintering characteristics, and conductive particles having a small particle diameter, particularly conductive particles having a nano particle diameter, have high sintering activity. The silver powder has an average particle diameter of 0.1 to 10 μm, preferably 0.2 to 3 μm.
In one embodiment, in order to optimize the conductivity of the electrode formed by sintering the slurry, the preferred technical scheme is as follows: the silver powder is flake silver powder, and the specific surface area of the silver powder is 1-2 m2(ii)/g; the tap density is 3.5-5.5 g/cm3。
The low-melting-point alloy powder is an alloy or intermetallic compound formed by at least two of copper, tellurium, bismuth, tin, indium and silver.
Preferably, the low-melting point alloy powder is an alloy or an intermetallic compound formed between copper, tellurium, bismuth, tin, indium and silver, including but not limited to bismuth-tin alloy powder, indium-tin alloy powder, copper-tin alloy powder, indium-silver alloy powder, copper-tellurium intermetallic compound, such as: CuTe, Cu2Te、Cu13Te7、 Cu7Te4、Cu7Te5At least one of (1).
The particle size of the low-melting-point alloy powder is 0.05-0.5 μm. The alloy powder has a low melting point, the sintering activity of the nano-sized alloy powder is high, the low-melting-point alloy powder is melted into liquid at a low sintering temperature, the liquid is filled in gaps among the silver powder to wet the surface of the silver powder, and when the amount of the liquid phase of the alloy is enough, the silver powder particles are completely surrounded by the liquid phase and are displaced and adjusted under the action of the surface tension of the liquid phase to achieve the tightest arrangement, so that solid-phase sintering is converted into liquid-phase sintering, the liquid-phase sintering speed is higher than that of the solid-phase sintering, the sintering process is accelerated, and the sintering densification speed and the final electrode density are. The nano conductive alloy powder plays a role of a sintering accelerant in the sintering process, promotes the sintering of the silver powder and is beneficial to low-temperature sintering.
In one embodiment, the silver powder has a particle size of 0.2 to 3 μm and the low melting point alloy powder has a particle size of 0.05 to 0.5 μm in order to reduce resistance to current transmission. The low-melting-point alloy powder is uniformly distributed in the silver electrode and the grid line, and the electrode obtained by the silver paste with the silver powder with the grain size distribution has higher density.
The organic carrier comprises the following components in parts by weight: 72-90 parts of organic solvent, 2-20 parts of thickening agent and 0.5-10 parts of first auxiliary agent.
Solvents in the organic vehicle include, but are not limited to, toluene, terpineol, DBE dibasic ester blend, alcohol ester dodeca, cyclohexanone, butyl carbitol or butyl carbitol acetate. Preferably, solvents with different boiling points are combined to enable the slurry to have a proper volatilization gradient, so that the sintering density is improved.
The thickening agent in the organic vehicle includes, but is not limited to, methyl cellulose, ethyl cellulose, cellulose acetate butyrate, derivatives of cellulose, acrylic resins, alkyd resins, rosin-based resins, aldehyde ketone resins, or polyvinyl butyral resins. Preferably, the thickener is at least one selected from the group consisting of an acrylic resin, a polyvinyl butyral resin, ethyl cellulose, and cellulose acetate butyrate.
The thickener is preferably 2 to 20 parts by weight. On the one hand, sufficient adhesive strength can be ensured; on the other hand, the viscosity of the paste is not too high, and the printability is not affected.
The addition amount of the first auxiliary agent is preferably 0.5-10 parts by weight relative to the whole weight of the conductive paste. On one hand, the conductive powder has good dispersibility, and the problems of net blocking or grid breaking and the like can not be caused during printing; on the other hand, the paste has good sagging resistance, the electrode is ideal in shape after printing, and the electrode is wider after firing without causing the problem of shading rise.
The first adjuvant in the organic carrier comprises a surfactant and a rheological adjuvant. The surfactant is selected from at least one of fatty alcohol polyoxyethylene ether, alkylphenol polyoxyethylene ether, fatty acid polyoxyethylene ether, castor oil polyoxyethylene ether or fatty amine polyoxyethylene ether.
The rheological aid is selected from modified hydrogenated castor oil, polyamide wax or polyurea type rheological aid. Preferably, the polyurea type rheological additive is hyperbranched polyurea, and the relative molecular weight is 2500-2800. The recovery of the rheological additive reflects the recovery rate of viscosity after the shear force disappears, namely the formation rate of hydrogen bonds, and if the recovery time is long, the anti-sagging effect cannot be achieved or the anti-sagging property is poor. If the shearing force disappears, hydrogen bonds are formed quickly, the viscosity is increased rapidly, and the anti-sagging effect is better. The molecular weight is about 2700, the polyurea molecules can be well stretched, and hydrogen bonds are easily formed among the molecules, so that a good recovery effect is achieved. And the small relative molecular mass of the polyurea molecules is too small, the chain segment is too short, and the net structure is difficult to form in a short time, so the required recovery time is longer, the molecular chain segment is also increased along with the increase of the relative molecular mass, the space net structure of the polyurea rheological aid is easier to form, and the recovery property is also better. However, the relative molecular mass is too large, and in the auxiliary agent with the same NH content, the smaller the number of molecules is, the lower the probability of mutual collision is, and only hydrogen bonds in the molecules can be formed, so that the difficulty of forming a net structure is increased, the recovery time is longer, and the recovery performance is reduced.
In the present invention, various additives such as a delamination inhibitor, an antioxidant, a silane coupling agent, and a defoaming agent may be added in a small amount within a range not to impair the effects of the present invention.
The following is further illustrated by specific examples.
Example 1
The electrode slurry comprises the following components in percentage by weight: 75 parts of silver powder, 10 parts of low-melting-point alloy powder, 4.1 parts of inorganic binder and 10.9 parts of organic carrier. The silver powder is in the shape of sphere-like or hollow sphere, the average particle diameter is 1.65 mu m, and the tap density of the silver powder>3.5 g/cm3(ii) a The low-melting-point alloy powder is prepared from copper-tin alloy powder and Cu2Te、CuTe、Cu13Te7The copper-tellurium intermetallic compound is formed, and the grain diameter of the alloy powder is 0.05-0.2 mu m; the softening point of the inorganic binder is 350-450 ℃, and the average particle size of the inorganic binder<2 μm, which comprises the following components in percentage by weight: 1.5 parts of PbO and 15 parts of Bi2O370 parts of TeO23 parts of B2O34.5 parts of Li2O, 6 parts of WO3(ii) a The solvent in the organic carrier is a mixture of alcohol ester dodeca and butyl carbitol acetate, the thickening agent is polyvinyl butyral and ethyl cellulose, the surfactant is alkylphenol polyoxyethylene ether, the rheological additive is hyperbranched polyurea, and the molecular weight of the hyperbranched polyurea is 2650; the solvent, the thickening agent and the first auxiliary agent form a mixture of organic carriers according to the weight ratio of 90 parts to 6 parts to 4 parts.
Example 2
The electrode slurry comprises the following components in percentage by weight: 70 parts of silver powder, 12 parts of low-melting-point alloy powder, 4.5 parts of inorganic binder and 13.5 parts of organic carrier. The silver powder is spherical or quasi-spherical, the average particle diameter is 1.25 mu m, and the tap density of the silver powder>4.5g/cm3(ii) a The low-melting-point alloy powder is prepared from indium tin alloy powder and Cu2The Te copper tellurium intermetallic compound is formed, and the grain diameter of the alloy powder is 0.05-0.5 mu m; the softening point of the inorganic binder is 350-450 ℃, and the average particle size of the inorganic binder<2 μm, which comprises the following components in percentage by weight: 1.5 parts of PbO and 11.5 parts of Bi2O366.5 portions of TeO24 parts of B2O32 parts of Li2O, 4.5 parts of ZnO, 10 parts of WO3(ii) a The organic solvent in the organic carrier is a mixture of terpineol and DBE (mixed dibasic acid ester), the thickening agent is polyvinyl butyral, the surfactant is fatty alcohol-polyoxyethylene ether, the rheological additive is hyperbranched polyurea, and the relative molecular weight of the hyperbranched polyurea is 2600; solvent, thickener and first aidThe mixture of organic carriers was composed in a weight ratio of 77 parts to 8 parts to 5 parts.
Example 3
The electrode slurry comprises the following components in percentage by weight: 67.5 parts of silver powder, 18 parts of low-melting-point alloy powder, 2 parts of inorganic binder and 12.5 parts of organic carrier. The silver powder is spherical or quasi-spherical, the average particle diameter is 1.35 mu m, and the tap density of the silver powder>4.5g/cm3(ii) a The alloy powder consists of low-melting-point alloy powder bismuth-tin alloy powder, indium-tin alloy powder and a CuTe copper-tellurium intermetallic compound, wherein the particle size of the alloy powder is 0.05-0.2 mu m; the softening point of the inorganic binder is 350-450 ℃, and the average particle diameter of the inorganic binder<2 μm, which comprises the following components in percentage by weight: 10 parts of PbO and 20 parts of Bi2O350 parts of TeO210 parts of B2O35.5 parts of Li2O, 4.5 parts of ZnO; the solvent in the organic carrier is a mixture of butyl carbitol, butyl carbitol acetate and alcohol ester twelve, the thickening agent is cellulose acetate butyrate, the surfactant is castor oil polyoxyethylene ether, the rheological additive is hyperbranched polyurea, and the molecular weight of the hyperbranched polyurea is 2650; the solvent, the thickening agent and the first auxiliary agent form a mixture of organic carriers according to the weight ratio of 90 parts to 6 parts to 4 parts.
Example 4
The electrode slurry comprises the following components in percentage by weight: 65 parts of silver powder, 15 parts of low-melting-point alloy powder, 5 parts of inorganic binder and 15 parts of organic carrier; the silver powder is spherical, the average particle diameter is 1.75 mu m, and the tap density of the silver powder>4.5g/cm3(ii) a The low-melting-point alloy powder is composed of indium-silver alloy powder and a CuTe copper-tellurium intermetallic compound, and the particle size of the alloy powder is 0.05-0.3 mu m; the softening point of the inorganic binder is 350-450 ℃, and the average particle size of the inorganic binder<2 μm, which comprises the following components in percentage by weight: 3.5 parts of PbO and 10 parts of Bi2O362 parts of TeO210 parts of Li2O, 10 parts of ZnO, 4.5 parts of WO3(ii) a The solvent in the organic carrier is a mixture of alcohol ester dodeca, DBE and cyclohexanone, the thickening agent is polyvinyl butyral, the surfactant is fatty acid polyoxyethylene ether, the rheological additive is hyperbranched structure polyurea, and the hyperbranched structure polyurea is adoptedUrea molecular weight 2800; the solvent, the thickening agent and the first auxiliary agent form a mixture of organic carriers according to the weight ratio of 85 parts to 7 parts to 8 parts.
Example 5
The electrode slurry comprises the following components in percentage by weight: 60 parts of silver powder, 20 parts of low-melting-point alloy powder, 8 parts of inorganic binder and 12 parts of organic carrier. The silver powder is spherical or quasi-spherical, the average particle diameter is 1.65 mu m, and the tap density of the silver powder>4.5g/cm3(ii) a The low-melting point alloy powder is prepared from indium tin alloy powder and Cu2The Te copper tellurium intermetallic compound is formed, and the grain diameter of the alloy powder is 0.05-0.4 mu m; the softening point of the inorganic binder is 350-450 ℃, and the average particle size of the inorganic binder<2 μm, which comprises the following components in percentage by weight: 10.5 parts of Bi2O380 parts of TeO21.5 parts of B2O34.5 parts of Li2O, 2 parts of ZnO, 1.5 parts of WO3(ii) a The organic solvent in the organic carrier is a mixture of terpineol and DBE (mixed dibasic acid ester), the thickening agent is polyvinyl butyral, the surfactant is fatty alcohol-polyoxyethylene ether, the rheological aid is hyperbranched polyurea, and the relative molecular weight of the hyperbranched polyurea is 2600; the solvent, the thickening agent and the first auxiliary agent form a mixture of organic carriers according to the weight ratio of 77 parts to 8 parts to 5 parts.
The parts by weight of each component of the electrode paste in examples 1 to 5 and the corresponding sintering temperature of the electrode paste in examples 1 to 5 when manufacturing the grid line on the front surface of the solar cell are shown in table 1.
TABLE 1 parts by weight of the components of the electrode pastes in examples 1 to 5 and the corresponding sintering temperatures
Experiments show that the components of the electrode slurry provided by the embodiments of the invention can reduce and widen the sintering window, and still have good contact performance at a lower sintering temperature, and the electrode formed by low-temperature sintering has better low-temperature sintering characteristics, so that the sintering temperature is reduced from 750-830 ℃ to 500-650 ℃.
The parts by weight of the components of the inorganic binder of the electrode slurry in examples 1 to 5 are shown in Table 2.
Table 2 parts by weight of each component of the inorganic binder for electrode pastes in examples 1 to 5
The above description is only a preferred embodiment of the application and is illustrative of the principles of the technology employed. It will be appreciated by a person skilled in the art that the scope of the invention as referred to in the present application is not limited to the embodiments with a specific combination of the above-mentioned features, but also covers other embodiments with any combination of the above-mentioned features or their equivalents without departing from the inventive concept. For example, the above features may be replaced with (but not limited to) features having similar functions disclosed in the present application.
Claims (10)
1. The electrode slurry is characterized by comprising the following components in parts by weight:
5-15 parts of an organic carrier;
0.5-5 parts of an inorganic binder;
70-95 parts of conductive powder;
the conductive powder comprises the following components in parts by weight:
60-75 parts of silver powder;
10-20 parts of low-melting-point alloy powder.
2. The electrode slurry according to claim 1,
the organic carrier comprises the following components in parts by weight: 72-90 parts of organic solvent, 2-20 parts of thickening agent and 0.5-10 parts of first auxiliary agent; the first aid comprises a surfactant and a rheological aid.
3. The electrode slurry according to claim 1 or 2,
the inorganic binder comprises the following components in parts by weight: 0 to 10 parts of PbO and 10 to 20 parts of Bi2O350-80 parts of TeO21-10 parts of B2O31 to 10 parts of Li2O, 1-10 parts of ZnO and 1-10 parts of WO3。
4. The electrode slurry according to claim 3,
the softening point of the inorganic binder is 370-450 ℃, and the median particle size of the inorganic binder is less than or equal to 2 μm.
5. The electrode slurry according to claim 1,
the silver powder is spherical, quasi-spherical or hollow spherical, and the specific surface area of the silver powder is 1-2 m2(ii)/g; the tap density of the silver powder is 2.5-6.5 g/cm3。
6. The electrode slurry according to claim 1,
the low-melting-point alloy powder is an alloy or intermetallic compound formed by at least two of copper, tellurium, bismuth, tin, indium and silver.
7. The electrode slurry according to claim 1, 5 or 6,
the silver powder has a particle size of 0.2 to 3 μm, and the low-melting-point alloy powder has a particle size of 0.05 to 0.5 μm.
8. The electrode slurry according to claim 2,
the surfactant is selected from at least one of fatty alcohol-polyoxyethylene ether, alkylphenol ethoxylate, fatty acid-polyoxyethylene ether, castor oil polyoxyethylene ether or fatty amine polyoxyethylene ether, and the rheological additive is selected from modified hydrogenated castor oil, polyamide wax or polyurea rheological additive.
9. The electrode slurry according to claim 2 or 8,
the thickening agent is at least one of acrylic resin, polyvinyl butyral resin, ethyl cellulose or cellulose acetate butyrate.
10. The electrode slurry according to claim 8,
the polyurea type rheological additive is hyperbranched polyurea, and the relative molecular weight of the polyurea type rheological additive is 2500-2800.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910129049.XA CN111599508A (en) | 2019-02-21 | 2019-02-21 | Electrode slurry |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910129049.XA CN111599508A (en) | 2019-02-21 | 2019-02-21 | Electrode slurry |
Publications (1)
Publication Number | Publication Date |
---|---|
CN111599508A true CN111599508A (en) | 2020-08-28 |
Family
ID=72186825
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910129049.XA Pending CN111599508A (en) | 2019-02-21 | 2019-02-21 | Electrode slurry |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN111599508A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112951476A (en) * | 2021-01-18 | 2021-06-11 | 成都宏科电子科技有限公司 | Tungsten paste for printing black alumina multilayer ceramic substrate and preparation method thereof |
CN113823704A (en) * | 2021-11-23 | 2021-12-21 | 陕西众森电能科技有限公司 | P-type silicon back contact solar cell and preparation method thereof |
CN113823705A (en) * | 2021-11-24 | 2021-12-21 | 陕西众森电能科技有限公司 | Heterojunction back contact solar cell and preparation method thereof |
WO2023061476A1 (en) * | 2021-10-14 | 2023-04-20 | 武宇涛 | Conductive paste for photovoltaic cell |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105679401A (en) * | 2014-02-26 | 2016-06-15 | 赫劳斯贵金属北美康舍霍肯有限责任公司 | A glass comprising molybdenum and lead in a solar cell paste |
US20170062632A1 (en) * | 2015-08-26 | 2017-03-02 | PLANT PV, Inc. | Silver-bismuth non-contact metallization pastes for silicon solar cells |
CN107274964A (en) * | 2017-06-30 | 2017-10-20 | 江苏瑞德新能源科技有限公司 | A kind of passivation emitter back silver paste of solar cell |
CN107274965A (en) * | 2017-07-03 | 2017-10-20 | 云南科威液态金属谷研发有限公司 | Electric slurry and its manufacture method based on low-melting-point metal micro-nano powder |
-
2019
- 2019-02-21 CN CN201910129049.XA patent/CN111599508A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105679401A (en) * | 2014-02-26 | 2016-06-15 | 赫劳斯贵金属北美康舍霍肯有限责任公司 | A glass comprising molybdenum and lead in a solar cell paste |
US20170062632A1 (en) * | 2015-08-26 | 2017-03-02 | PLANT PV, Inc. | Silver-bismuth non-contact metallization pastes for silicon solar cells |
CN107274964A (en) * | 2017-06-30 | 2017-10-20 | 江苏瑞德新能源科技有限公司 | A kind of passivation emitter back silver paste of solar cell |
CN107274965A (en) * | 2017-07-03 | 2017-10-20 | 云南科威液态金属谷研发有限公司 | Electric slurry and its manufacture method based on low-melting-point metal micro-nano powder |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112951476A (en) * | 2021-01-18 | 2021-06-11 | 成都宏科电子科技有限公司 | Tungsten paste for printing black alumina multilayer ceramic substrate and preparation method thereof |
CN112951476B (en) * | 2021-01-18 | 2022-08-12 | 成都宏科电子科技有限公司 | Tungsten slurry for printing black alumina multilayer ceramic substrate and preparation method thereof |
WO2023061476A1 (en) * | 2021-10-14 | 2023-04-20 | 武宇涛 | Conductive paste for photovoltaic cell |
CN117457253A (en) * | 2021-10-14 | 2024-01-26 | 武宇涛 | Conductive paste for photovoltaic cells |
CN113823704A (en) * | 2021-11-23 | 2021-12-21 | 陕西众森电能科技有限公司 | P-type silicon back contact solar cell and preparation method thereof |
CN113823705A (en) * | 2021-11-24 | 2021-12-21 | 陕西众森电能科技有限公司 | Heterojunction back contact solar cell and preparation method thereof |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN111599508A (en) | Electrode slurry | |
US10164128B2 (en) | Composition for solar cell electrodes and electrode fabricated using the same | |
CN102403047B (en) | Paste for solar cell electrode and electrode using the same and solar cell using the same | |
CN103493148B (en) | Conductive paste | |
CN109524150B (en) | All-aluminum back surface field back silver paste and preparation method and application thereof | |
WO2020220393A1 (en) | Glass powder and silver aluminum paste comprising the same and used on front side of n-type double-sided solar cell | |
CN111028976B (en) | Back silver paste for all-aluminum back surface field solar cell | |
CN104157331B (en) | Silicon solar cell electrode silver coated copper sizing agent and preparing method thereof | |
CN104157328A (en) | Silicon solar cell front face electrode silver paste and preparing method thereof | |
KR101716525B1 (en) | Electrode paste composition and electrode prepared using the same | |
US8562872B2 (en) | Paste for solar cell electrode and solar cell prepared using the same | |
CN110491545B (en) | N-type solar cell front surface fine grid slurry and preparation method thereof | |
TWI447186B (en) | Paste composition for front electrode of solar cell, and solar cell including the same | |
KR101557536B1 (en) | Electrode paste composition and electrode prepared using the same | |
CN103700428A (en) | Electroconduction slurry for silicon solar cell electrodes and preparation method thereof | |
CN107274964A (en) | A kind of passivation emitter back silver paste of solar cell | |
CN113744914A (en) | High-temperature silver paste with Ag-On-Al structure for PERC and preparation method thereof | |
CN114203335A (en) | Front aluminum paste suitable for N-type TOPCon battery and preparation method thereof | |
KR101377555B1 (en) | A glass frit, paste composition comprising the same and silicon solar cell using the paste composition | |
CN110648781A (en) | Main grid front silver paste suitable for step-by-step screen printing | |
WO2015115567A1 (en) | Solar cell, solar cell module, electrode-provided component, semiconductor device, and electronic component | |
CN107216041B (en) | Glass frit for preparing solar cell electrode, paste composition comprising same, solar cell electrode and solar cell | |
CN109166646B (en) | Environment-friendly aluminum electrode paste for back-passivated silicon solar cell | |
CN104751936A (en) | Crystalline silicon solar cell positive conductive silver paste and preparation method thereof | |
KR101659118B1 (en) | Composition for forming solar cell electrode and electrode prepared using the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200828 |
|
RJ01 | Rejection of invention patent application after publication |