CN111485228A - 平板式pecvd设备的微波天线组件及平板式pecvd设备 - Google Patents

平板式pecvd设备的微波天线组件及平板式pecvd设备 Download PDF

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CN111485228A
CN111485228A CN202010565829.1A CN202010565829A CN111485228A CN 111485228 A CN111485228 A CN 111485228A CN 202010565829 A CN202010565829 A CN 202010565829A CN 111485228 A CN111485228 A CN 111485228A
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microwave
flat plate
plate type
quartz tube
microwave antenna
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张威
杨彬
唐电
彭宜昌
陈特超
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Hunan Red Sun Photoelectricity Science and Technology Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515

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  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
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  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

本发明公开了一种平板式PECVD设备的微波天线组件，包括微波天线及微波隔离石英管，所述微波天线设于平板式PECVD设备的真空腔室的外侧，所述微波隔离石英管设于所述真空腔室内，微波天线组件还包括石英管旋转驱动件，所述石英管旋转驱动件与所述微波隔离石英管相连。本发明还公开了一种平板式PECVD设备，包括真空腔室，所述真空腔室内设有工件载板及载板输送部件，还包括前述的平板式PECVD设备的微波天线组件。本发明具备有利于减缓薄膜的附着速率，延长石英管更换周期，提高生产效率等优点。

Description

平板式PECVD设备的微波天线组件及平板式PECVD设备
技术领域
本发明涉及半导体设备，尤其涉及一种平板式PECVD设备的微波天线组件及平板式PECVD设备。
背景技术
在目前PERC太阳能电池生长工艺中，Al2O3和Si3N4薄膜必不可少，平板式PECVD设备是生长Al2O3和Si3N4薄膜的设备之一，其原理在于利用线性微波放电激发工艺气体产生等离子体，两种离化的气体再结合生成新的固体化合物。
目前常用的一种技术是采用线性天线两端加微波，以获得更长的均匀放电区域，从而达到均匀沉膜的要求。微波天线放置在真空腔体外，工艺气体在真空腔室内，二者之间采用石英管隔离，微波透过石英管激发内部的工艺气体使之电离。其中微波天线和石英管都是静止不动的，方便获得工艺真空，结构也比较简单。
工艺气体离化后工件载板上方的等离子体密度最高，所以在载板上的薄膜生长速率很高，但同时薄膜也会在石英管上生长，而且在靠近工件载板一侧(也即石英管下侧)生长的很快，而背离工件载板一侧(也即石英管上侧)生长的慢。工作时，载板是不断进出等离子体区的以实现批量生产，微波天线保持放电，造成在朝向工件载板一则的石英管上一周时间内累计膜厚可达数毫米，这层薄膜会吸收微波，导致激发气体的微波功率变小，同时这层薄膜吸收微波功率后会发热，导致石英管融化。目前尚无有效的手段可将附着在石英管上的薄膜剥离，因此需要定期将设备停机进行维护，更换新的石英管，降低了设备的使用率，影响生产效率。
发明内容
本发明要解决的技术问题是克服现有技术的不足，提供一种有利于减缓薄膜的附着速率，延长石英管更换周期，提高生产效率的平板式PECVD设备的微波天线组件。
本发明进一步提供一种包含上述平板式PECVD设备的微波天线组件的平板式PECVD设备。
为解决上述技术问题，本发明采用以下技术方案：
一种平板式PECVD设备的微波天线组件，包括微波天线及微波隔离石英管，所述微波天线设于平板式PECVD设备的真空腔室的外侧，所述微波隔离石英管设于所述真空腔室内，微波天线组件还包括石英管旋转驱动件，所述石英管旋转驱动件与所述微波隔离石英管相连。
作为上述技术方案的进一步改进：
所述石英管旋转驱动件设于所述真空腔室的外侧，所述微波隔离石英管与所述旋转驱动件密封连接。
一种平板式PECVD设备，包括真空腔室，所述真空腔室内设有工件载板及载板输送部件，还包括上述的平板式PECVD设备的微波天线组件。
作为上述技术方案的进一步改进：
所述真空腔室内还设有几字形隔离罩，所述微波隔离石英管设于所述隔离罩内。
微波天线组件设有多组且平行布置。
与现有技术相比，本发明的优点在于：本发明公开的平板式PECVD设备的微波天线组件，设置有石英管旋转驱动件，工艺过程中，利用石英管旋转驱动件带动微波隔离石英管旋转，试验表明，旋转状态的微波隔离石英管可降低薄膜在其上的附着速率，降低单位时间内薄膜在微波隔离石英管上沉积厚度，同时旋转运动可使薄膜均匀地在微波隔离石英管外圆周面上生长，相比现有技术中静止状态下主要生长在下侧的现象，薄膜达到额定更换厚度的时间会延长许多，也即维护间隔时间延长，有助于提高生产效率。
本发明公开的平板式PECVD设备，包含上述的平板式PECVD设备的微波天线组件，因而同样具有上述优点。
附图说明
图1是本发明平板式PECVD设备的微波天线组件及平板式PECVD设备的结构示意图。
图中各标号表示：1、微波天线；2、微波隔离石英管；3、真空腔室；4、工件载板；5、载板输送部件；6、隔离罩。
具体实施方式
以下结合说明书附图和具体实施例对本发明作进一步详细说明。
图1示出了本发明平板式PECVD设备的微波天线组件及平板式PECVD设备的一种实施例，本实施例的平板式PECVD设备的微波天线组件，包括微波天线1及微波隔离石英管2，微波天线1设于平板式PECVD设备的真空腔室3的外侧，微波隔离石英管2设于真空腔室3内，微波天线组件还包括石英管旋转驱动件(图中未示出，可以是各类常用的旋转驱动，例如电机、电机加同步带、气缸加连杆机构等)，石英管旋转驱动件与微波隔离石英管2相连。
该平板式PECVD设备的微波天线组件，设置有石英管旋转驱动件，工艺过程中，利用石英管旋转驱动件带动微波隔离石英管2旋转，试验表明，旋转状态的微波隔离石英管2可降低薄膜在其上的附着速率，降低单位时间内薄膜在微波隔离石英管2上沉积厚度，同时旋转运动可使薄膜均匀地在微波隔离石英管2外圆周面上生长，相比现有技术中静止状态下主要生长在下侧的现象，薄膜达到额定更换厚度的时间会延长许多，也即维护间隔时间延长，有助于提高生产效率。
进一步地，本实施例中，石英管旋转驱动件设于真空腔室3的外侧，微波隔离石英管2与旋转驱动件密封连接，方便从真空腔室3内安装和更换微波隔离石英管2，石英管旋转驱动件可方便地替换现有微波石英管2不转动安装的结构部件。作为优选的技术方案，石英管旋转驱动件设于微波隔离石英管的两端并同步驱动。
本实施例的平板式PECVD设备，包括真空腔室3，真空腔室3内设有工件载板4及载板输送部件5，还包括上述的平板式PECVD设备的微波天线组件。
该平板式PECVD设备，包含上述的平板式PECVD设备的微波天线组件，因而同样具有上述优点。
作为优选的技术方案，本实施例中，真空腔室3内还设有几字形隔离罩6，微波隔离石英管2设于隔离罩6内。设置几字形隔离罩6，有利于提高隔离罩6内等离子体密度以形成等离子体区，工件载板4装载工件经过等离子体区时，实现薄膜快速生长。
作为优选的技术方案，微波天线组件设有多组且平行布置，可以并联使用。
虽然本发明已以较佳实施例揭露如上，然而并非用以限定本发明。任何熟悉本领域的技术人员，在不脱离本发明技术方案范围的情况下，都可利用上述揭示的技术内容对本发明技术方案做出许多可能的变动和修饰，或修改为等同变化的等效实施例。因此，凡是未脱离本发明技术方案的内容，依据本发明技术实质对以上实施例所做的任何简单修改、等同变化及修饰，均应落在本发明技术方案保护的范围内。

Claims (5)

1.一种平板式PECVD设备的微波天线组件，包括微波天线(1)及微波隔离石英管(2)，所述微波天线(1)设于平板式PECVD设备的真空腔室(3)的外侧，所述微波隔离石英管(2)设于所述真空腔室(3)内，其特征在于：微波天线组件还包括石英管旋转驱动件，所述石英管旋转驱动件与所述微波隔离石英管(2)相连。
2.根据权利要求1所述的平板式PECVD设备的微波天线组件，其特征在于：所述石英管旋转驱动件设于所述真空腔室(3)的外侧，所述微波隔离石英管(2)与所述旋转驱动件密封连接。
3.一种平板式PECVD设备，包括真空腔室(3)，所述真空腔室(3)内设有工件载板(4)及载板输送部件(5)，其特征在于：还包括权利要求1或2所述的平板式PECVD设备的微波天线组件。
4.根据权利要求3所述的平板式PECVD设备，其特征在于：所述真空腔室(3)内还设有几字形隔离罩(6)，所述微波隔离石英管(2)设于所述隔离罩(6)内。
5.根据权利要求3所述的平板式PECVD设备，其特征在于：微波天线组件设有多组且平行布置。
CN202010565829.1A 2020-06-19 2020-06-19 平板式pecvd设备的微波天线组件及平板式pecvd设备 Pending CN111485228A (zh)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08158073A (ja) * 1994-11-30 1996-06-18 Rohm Co Ltd ケミカルドライエッチング装置
TW425629B (en) * 1998-01-29 2001-03-11 Mitsubishi Electric Corp Plasma generator
CN205133732U (zh) * 2015-11-24 2016-04-06 盐城阿特斯协鑫阳光电力科技有限公司 一种平板式pecvd机台的u型槽
US20190051495A1 (en) * 2017-08-10 2019-02-14 Qiwei Liang Microwave Reactor For Deposition or Treatment of Carbon Compounds

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08158073A (ja) * 1994-11-30 1996-06-18 Rohm Co Ltd ケミカルドライエッチング装置
TW425629B (en) * 1998-01-29 2001-03-11 Mitsubishi Electric Corp Plasma generator
CN205133732U (zh) * 2015-11-24 2016-04-06 盐城阿特斯协鑫阳光电力科技有限公司 一种平板式pecvd机台的u型槽
US20190051495A1 (en) * 2017-08-10 2019-02-14 Qiwei Liang Microwave Reactor For Deposition or Treatment of Carbon Compounds

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