CN111448672B - 具有从切割边缘缩回的结的太阳能电池 - Google Patents

具有从切割边缘缩回的结的太阳能电池 Download PDF

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Publication number
CN111448672B
CN111448672B CN201980005033.6A CN201980005033A CN111448672B CN 111448672 B CN111448672 B CN 111448672B CN 201980005033 A CN201980005033 A CN 201980005033A CN 111448672 B CN111448672 B CN 111448672B
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Prior art keywords
solar cell
substrate
emitter region
solar
passivation layer
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Chinese (zh)
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CN111448672A (zh
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林亚福
戴维·雅各布
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Maikesheng Solar Energy Co ltd
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Maikesheng Solar Energy Co ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/10—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in arrays in a single semiconductor substrate, the photovoltaic cells having vertical junctions or V-groove junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/129—Passivating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
CN201980005033.6A 2018-04-16 2019-04-11 具有从切割边缘缩回的结的太阳能电池 Active CN111448672B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862658443P 2018-04-16 2018-04-16
US62/658,443 2018-04-16
PCT/US2019/027005 WO2019204119A1 (en) 2018-04-16 2019-04-11 Solar cells having junctions retracted from cleaved edges

Publications (2)

Publication Number Publication Date
CN111448672A CN111448672A (zh) 2020-07-24
CN111448672B true CN111448672B (zh) 2025-01-14

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Country Link
US (2) US11515441B2 (https=)
EP (1) EP3782206A4 (https=)
JP (2) JP2021520056A (https=)
CN (1) CN111448672B (https=)
AU (1) AU2019255506B2 (https=)
WO (1) WO2019204119A1 (https=)

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TWI888529B (zh) 2020-04-09 2025-07-01 日商鐘化股份有限公司 太陽電池模組
US11764315B2 (en) 2020-09-16 2023-09-19 Maxeon Solar Pte. Ltd. Solar cell separation with edge coating
CN119836054A (zh) * 2024-12-27 2025-04-15 隆基绿能科技股份有限公司 一种太阳能电池、光伏组件和太阳能电池的制备方法

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CN101743640B (zh) * 2007-07-26 2012-12-19 康斯坦茨大学 具有回蚀刻发射极的硅太阳能电池的制造方法和相应的太阳能电池
CN103258881A (zh) * 2013-05-07 2013-08-21 杨立友 薄膜太阳能电池板及其制备方法

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US6297126B1 (en) 1999-07-12 2001-10-02 Chartered Semiconductor Manufacturing Ltd. Silicon nitride capped shallow trench isolation method for fabricating sub-micron devices with borderless contacts
US6333457B1 (en) 2000-08-29 2001-12-25 Sunpower Corporation Edge passivated silicon solar/photo cell and method of manufacture
US7851698B2 (en) 2008-06-12 2010-12-14 Sunpower Corporation Trench process and structure for backside contact solar cells with polysilicon doped regions
KR101139458B1 (ko) * 2009-06-18 2012-04-30 엘지전자 주식회사 태양전지 및 그 제조방법
KR101032624B1 (ko) * 2009-06-22 2011-05-06 엘지전자 주식회사 태양 전지 및 그 제조 방법
KR101130197B1 (ko) * 2009-09-28 2012-03-30 엘지전자 주식회사 태양전지 모듈 및 그 제조 방법
DE102010035582B4 (de) * 2010-08-27 2017-01-26 Universität Konstanz Verfahren zum Herstellen einer Solarzelle mit einer texturierten Frontseite sowie entsprechende Solarzelle
KR20120026813A (ko) * 2010-09-10 2012-03-20 삼성전기주식회사 도전성 전극 구조물의 형성 방법 및 이를 포함하는 태양 전지의 제조 방법, 그리고 상기 태양 전지의 제조 방법에 의해 제조된 태양 전지
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US20150380581A1 (en) * 2014-06-27 2015-12-31 Michael C. Johnson Passivation of light-receiving surfaces of solar cells with crystalline silicon
KR102366935B1 (ko) * 2014-08-07 2022-02-23 엘지전자 주식회사 태양 전지 및 이를 포함하는 태양 전지 모듈
US20160284917A1 (en) * 2015-03-27 2016-09-29 Seung Bum Rim Passivation Layer for Solar Cells
JP2016213284A (ja) * 2015-05-01 2016-12-15 東洋アルミニウム株式会社 Ｐｅｒｃ型太陽電池用アルミニウムペースト組成物
KR101846445B1 (ko) * 2016-10-13 2018-04-06 엘지전자 주식회사 태양 전지 및 이의 제조 방법

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CN101743640B (zh) * 2007-07-26 2012-12-19 康斯坦茨大学 具有回蚀刻发射极的硅太阳能电池的制造方法和相应的太阳能电池
CN101933156A (zh) * 2008-02-25 2010-12-29 Lg电子株式会社 太阳能电池和制造该太阳能电池的方法
CN103258881A (zh) * 2013-05-07 2013-08-21 杨立友 薄膜太阳能电池板及其制备方法

Also Published As

Publication number Publication date
EP3782206A1 (en) 2021-02-24
US20190319144A1 (en) 2019-10-17
JP2024109947A (ja) 2024-08-14
US20230044021A1 (en) 2023-02-09
EP3782206A4 (en) 2021-05-19
JP2021520056A (ja) 2021-08-12
CN111448672A (zh) 2020-07-24
US11515441B2 (en) 2022-11-29
WO2019204119A1 (en) 2019-10-24
AU2019255506A1 (en) 2020-04-02
AU2019255506B2 (en) 2024-11-07

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Effective date of registration: 20200924

Address after: Singapore City

Applicant after: Maikesheng solar energy Co.,Ltd.

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Applicant before: SUNPOWER Corp.

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Application publication date: 20200724

Assignee: Huansheng photovoltaic (Jiangsu) Co.,Ltd.

Assignor: Maikesheng solar energy Co.,Ltd.

Contract record no.: X2021990000263

Denomination of invention: Solar cell with knot retracted from cutting edge

License type: Common License

Record date: 20210507

Application publication date: 20200724

Assignee: Huansheng new energy (Jiangsu) Co.,Ltd.

Assignor: Maikesheng solar energy Co.,Ltd.

Contract record no.: X2021990000262

Denomination of invention: Solar cell with knot retracted from cutting edge

License type: Common License

Record date: 20210507

EC01 Cancellation of recordation of patent licensing contract

Assignee: Huansheng photovoltaic (Jiangsu) Co.,Ltd.

Assignor: Maikesheng solar energy Co.,Ltd.

Contract record no.: X2021990000263

Date of cancellation: 20240621

Assignee: Huansheng new energy (Jiangsu) Co.,Ltd.

Assignor: Maikesheng solar energy Co.,Ltd.

Contract record no.: X2021990000262

Date of cancellation: 20240621

EC01 Cancellation of recordation of patent licensing contract
GR01 Patent grant
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Denomination of invention: Solar cell with knot retracted from cutting edge

Granted publication date: 20250114

Pledgee: Deutsche Trust (Hong Kong) Ltd.

Pledgor: Maikesheng solar energy Co.,Ltd.

Registration number: Y2024990000329

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