CN111293669B

CN111293669B - Novel low-power-consumption leakage protector

Info

Publication number: CN111293669B
Application number: CN201811495612.7A
Authority: CN
Inventors: 何波
Original assignee: Geshu Electronic Technology Shanghai Co ltd
Current assignee: Geshu Electronic Technology Shanghai Co ltd
Priority date: 2018-12-07
Filing date: 2018-12-07
Publication date: 2022-06-21
Anticipated expiration: 2038-12-07
Also published as: CN111293669A

Abstract

The invention relates to a novel low-power-consumption leakage protector which comprises an alternating-current power supply, a silicon controlled rectifier, a signal processing module, a current transformer, a silicon controlled rectifier current driving module and a power taking circuit module, and further comprises a voltage measuring enabling module, wherein the silicon controlled rectifier current driving module is also controlled by enabling of the voltage measuring enabling module, the voltage measuring enabling module only allows current for driving the silicon controlled rectifier to be output when monitoring that the output voltage of the power taking circuit module meets a certain condition, namely only when the voltage measuring enabling module and the signal processing module both output effective enabling signals, the silicon controlled rectifier current driving module is allowed to output conducting current for driving the silicon controlled rectifier. Compared with the prior art, the invention has the advantages of low drive power consumption of the controllable silicon, simplified structure of the power taking circuit, low power consumption, small temperature rise, energy conservation, environmental protection, low cost and the like.

Description

Novel low-power-consumption leakage protector

Technical Field

The invention relates to the technical field of power consumption protector switches, in particular to a novel low-power-consumption leakage protector.

Background

The principle of the scheme mainly adopted by the existing leakage protector is as follows: when electric leakage occurs, the sum of the currents of all the live wires and the zero lines which are used for supplying power is nonzero, the difference can be detected by a current transformer, then the difference is amplified, processed and confirmed by a relevant circuit, the silicon controlled rectifier is driven to be conducted, the conducted current flows through a tripping coil of the tripper, and the tripper acts to cut off a mains supply switch. The current mainstream leakage protector scheme is based on an application-specific integrated circuit chip to process signals output by a current transformer and drive a silicon controlled rectifier to be conducted.

The advantage of this kind of scheme is that signal processing is accurate, and can reliably drive the silicon controlled rectifier and turn on. But the disadvantage is that the power consumption is relatively large, generally about 0.5 watt, which causes the temperature inside the leakage protector to rise, and the leakage protector is easy to be damaged by overheating when working in high temperature environment. Meanwhile, the circuit structure for directly taking electricity from the mains supply is complex and high in cost. If the leakage protector is in a state of always working in the distribution box, the accumulated power consumption of 0.5 watt for one year is about four degrees, and at least billions of leakage protectors exist in the whole country, which is not favorable for energy conservation and environmental protection.

Disclosure of Invention

The invention aims to overcome the defects of the prior art and provide a novel low-power leakage protector.

The purpose of the invention can be realized by the following technical scheme:

a novel low-power leakage protector comprises an alternating current power supply, a silicon controlled rectifier, a signal processing module, a current transformer, a silicon controlled rectifier current driving module and a power taking circuit module, wherein the alternating current power supply is connected into the power taking circuit module, the output end of the power taking circuit module generates a low-voltage direct current power supply to supply power to other modules, the output end of the power taking circuit module is connected with two lines VDD and GND and supplies power to other modules through the two lines, the positive electrodes of the silicon controlled rectifier current driving module, the signal processing module and the voltage measuring enabling module are connected with VDD, the negative electrodes of the silicon controlled rectifier current driving module and the voltage measuring enabling module are connected with GND to receive power supply, the signal of the current transformer is output to the signal processing module, the signal processing module is arranged between a first enabling end of the silicon controlled rectifier current driving module and the output end of the current transformer and is used for generating enabling signals to control the silicon controlled rectifier current driving module, silicon controlled rectifier current drive module with the control end of silicon controlled rectifier is connected, novel low-power consumption earth-leakage protector still includes pressure measurement enabling module, the output of pressure measurement enabling module connect in No. two enabling ends of silicon controlled rectifier current drive module, silicon controlled rectifier current drive module still receives the enable control of shown pressure measurement enabling module, pressure measurement enabling module is only monitoring when the output voltage who gets the electric circuit module satisfies the certain condition, just allows the output drive the electric current of silicon controlled rectifier, only work promptly pressure enabling module with when signal processing module all exports effective enabling signal, just allows silicon controlled rectifier current drive module output drive the on-current of silicon controlled rectifier.

Preferably, the power-taking circuit module comprises a first diode, a first resistor, a first capacitor and a first zener diode, wherein the anode of the first diode is connected with the live wire of the alternating current power supply, the cathode of the first diode is connected with the cathode of the first zener diode after passing through the first resistor, the anode of the first zener diode is connected with the zero line of the alternating current power supply, the two ends of the first capacitor are connected with the anode and the cathode of the first zener diode in parallel, and the direct current power supply formed by the first capacitor provides direct current power supply for other modules through a VDD connecting end and a GND connecting end.

Preferably, get electric circuit module include second electric capacity, second resistance, first full-bridge rectifier circuit, second zener diode and third electric capacity, the one end of second electric capacity with alternating current power supply's live wire is connected, its other end process behind the second resistance with first full-bridge rectifier circuit's alternating current input end is connected, another alternating current input end of first full-bridge rectifier circuit with alternating current power supply's zero line is connected, second zener diode with third electric capacity all with the positive negative pole parallel connection of first full-bridge rectifier circuit's direct current output end, the direct current power supply that third electric capacity formed provides direct current power supply through VDD and GND link to other modules.

Preferably, the voltage measurement enabling module comprises a third resistor, a fourth resistor, a reference voltage source and a first comparator, wherein the positive electrode of the signal input end of the first comparator is correspondingly connected to the VDD connecting end and the GND connecting end after passing through the third resistor and the fourth resistor respectively, the positive electrode and the negative electrode of the reference voltage source and the positive electrode and the negative electrode of the first comparator are correspondingly connected to the VDD connecting end and the GND connecting end to receive power supply, the reference voltage output end of the reference voltage source is connected to the negative electrode of the signal input end of the first comparator, and the output end of the first comparator is connected to the second enabling end of the thyristor current driving module.

Preferably, the load measurement enabling module includes a MOS tube assembly, a first inverter, a first MOS tube and a fifth resistor, an output end of the first inverter is connected to an enable end of the thyristor current driving module, a VDD connection end passes through the fifth resistor and is connected to an input end of the first inverter, a GND connection end is connected to a source of the first MOS tube, a drain of the first MOS tube is also connected to an input end of the first inverter, a source of a p-channel MOS tube and a source of an n-channel MOS tube in the MOS tube assembly are respectively connected to the VDD connection end and the GND connection end, and a gate of the n-channel MOS tube in the MOS tube assembly is connected to a gate of the first MOS tube.

Preferably, the MOS tube assembly is composed of a plurality of p-channel MOS tubes and a plurality of n-channel MOS tubes.

Compared with the prior art, the invention has the following advantages:

(1) the invention has small temperature rise and simple circuit structure, and the voltage measuring enabling module is also arranged between the output end of the power taking circuit module and the silicon controlled current driving module, so that the internal temperature rise is small, the power taking circuit module can be used in high-temperature environment, and is more reliable and more energy-saving; meanwhile, the circuit part for taking electricity from commercial power is greatly simplified, and the newly added voltage measuring enabling module can be integrated in an integrated circuit chip together with the signal processing module and the silicon controlled current driving module, so that the cost of the whole scheme is effectively reduced, and the whole power consumption of the leakage protector is greatly reduced.

(2) The controllable silicon is driven controllably, the power consumption is low, the power consumption part of the leakage protector which is improved in the invention is the driving power consumption of the controllable silicon, and the driving mode of the controllable silicon in the scheme of the existing leakage protector is continuous current driving. In order to provide enough reliable power supply capability for the driving current, the leakage protector needs to maintain a large power taking capability, a comparator, an inverter, a MOSFET and other switch control elements are respectively utilized, the driving current of the controllable silicon is conditional, intermittent and pulse, the power consumption of driving the controllable silicon is greatly reduced, the integral power consumption of the leakage protector is further obviously reduced, the circuit part of the leakage protector for taking the power from the mains supply is also greatly simplified, and only a much smaller power taking capability needs to be reserved.

(3) The voltage measuring enabling module has strong expansibility, and elements such as a voltage dividing resistor and an MOS tube adopted by the voltage measuring enabling module can meet different requirements of currents of various silicon controlled control ends by simply changing element selection, so that the voltage measuring enabling module also has strong expansibility and applicability.

Drawings

Fig. 1 is a main component diagram of a leakage protector in the prior art;

FIG. 2 is a block diagram of the present invention;

FIG. 3 is a schematic composition diagram of a first embodiment of the present invention;

fig. 4 is a schematic composition diagram of a second embodiment of the present invention.

The reference numbers indicate:

1 is an alternating current power supply; 2 is controlled silicon; 3 is a signal processing module; 4 is a current transformer; 5 is a first diode; 6 is a first resistor; 7 is a first capacitor; 8 is a first zener diode; 9 is a second capacitor; 10 is a second resistor; 11 is a first full-bridge rectification circuit; 12 is a second zener diode; 13 is a third capacitor; 14 is a third resistor; 15 is a fourth resistor; 16 is a reference voltage source; 17 is a first comparator; 18 is a first inverter; 19 is a first MOS tube; 20 is a fifth resistor; 21 is a p-channel MOS tube; 22 is an n-channel MOS tube;

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, shall fall within the scope of protection of the present invention.

As shown in fig. 1, the main components of the leakage protector in the prior art are, firstly, a power-taking circuit, which is composed of a rectifying circuit, a current-limiting circuit, a voltage-stabilizing circuit, a capacitor, and the like, and which performs the function of taking power from the mains supply to generate a low-voltage dc power supply to supply power to other modules. This low voltage dc power supply is designated VDD.

After the signal processing circuit confirms that the current leakage event is detected by the current transformer, the switch is switched on, the current for driving the controlled silicon is output to the controlled silicon, and the controlled silicon is switched on to push the release to act so as to cut off the mains supply power supply switch.

Example 1

As shown in fig. 2 and fig. 3, the overall module schematic diagram of the novel low-power leakage protector and the corresponding detailed composition schematic diagram of the first embodiment of the present invention include an ac power supply 1, a thyristor 2, a signal processing module 3, a current transformer 4, a thyristor current driving module, and a power-taking circuit module, wherein an input end of the power-taking circuit module is connected to the ac power supply 1, an output end of the power-taking circuit module is connected to a control end of the thyristor 2 after passing through the thyristor current driving module, the signal processing module 3 is disposed between an enable end of the thyristor current driving module and an output end of the power-taking circuit module and is grounded, the signal processing module 3 is further connected to an output end of the current transformer 4, and a voltage-measuring enable module is further disposed between the output end of the power-taking circuit module and the thyristor current driving module.

Wherein, the power circuit module of embodiment 1 comprises a first diode 5, a first resistor 6, a first capacitor 7 and a first zener diode 8, the anode of the first diode 5 is connected with the live wire of the ac power supply 1, the cathode of the first diode 5 is connected with the cathode of the first zener diode 8 through the first resistor 6, the anode of the first zener diode 8 is connected with the zero line of the ac power supply 1, the two ends of the first capacitor 7 are connected with the anode and the cathode of the first zener diode 8 in parallel, the two ends of the first capacitor 7 are connected with VDD and GND and supply power to other modules through the two wires, the anodes of the silicon controlled current driving module, the signal processing module and the voltage measurement enabling module are all connected with VDD, the cathode is connected with GND to receive power supply, the silicon controlled current driving module is connected with the control end of the silicon controlled, the signal processing module is arranged between the first number enabling end of the silicon controlled current driving module and the output end of the current transformer, and the output of the voltage measuring enabling module is connected to the second enabling end of the silicon controlled current driving module.

The voltage measurement enabling module of embodiment 1 includes a third resistor 14, a fourth resistor 15, a reference voltage source 16 and a first comparator 17, the positive electrode of the signal input terminal of the first comparator 17 is connected to VDD and GND through the third resistor 14 and the fourth resistor 15, respectively, the positive electrode and the negative electrode of the reference voltage source 16 and the positive electrode and the negative electrode of the first comparator 17 are both connected to VDD and GND to receive power supply, the reference voltage output of the reference voltage source 16 is connected to the negative electrode of the signal input terminal of the first comparator 17, and the output terminal of the first comparator 17 is connected to the second enabling terminal of the thyristor current driving module.

The rest of the signal processing modules 3 and the silicon controlled current driving module are all integrated modules in a common chip.

The working principle of the embodiment is as follows: the power supply VDD obtained by the power taking circuit is subjected to voltage division through a resistor and then is compared with reference voltage, and only when the VDD is larger than a certain value, the current for driving the silicon controlled rectifier is allowed to be output to the silicon controlled rectifier; otherwise, the current for driving the silicon controlled rectifier is forbidden to be generated or output. Because the current for continuously driving the controllable silicon does not need to be maintained, the requirement on the power taking circuit is greatly reduced. The power consumption of the power taking circuit is obviously reduced, and the structure can be simplified.

A diode is used for half-wave rectification, after passing through a current-limiting resistor, a low-voltage direct-current power supply VDD for supplying power to other modules is formed on a voltage stabilizing diode and a capacitor, and if the VDD is higher than a reference voltage after being subjected to voltage division through the resistor, the output of a comparator is high and effective; the high active logic enable signal en2 (i.e., enable terminal two) is one of the necessary conditions for allowing the current driving the thyristor to be output to the thyristor;

after the current transformer and a signal processing circuit of the current transformer judge that a leakage event occurs, an effective logic enabling signal en1 (namely a first enabling end) is also output;

the module for generating the current for driving the silicon controlled rectifier is provided with two enabling input interfaces for receiving en1 (namely a first enabling end) and en2 (namely a second enabling end); this module outputs drive current to the thyristors only when both en1 (i.e., enable terminal one) and en2 (i.e., enable terminal two) are active high; therefore, after the signal processing circuit confirms that the leakage event occurs and VDD is higher than the preset voltage value, the current for driving the silicon controlled rectifier is output.

Example 2

As shown in fig. 4, which is a second embodiment of the present invention, it can be seen that the main parts of this embodiment are the same as those of embodiment 1, and mainly the difference between the power-taking circuit module and the voltage-measuring enabling module is changed as the second embodiment.

The power-taking circuit module of embodiment 2 includes a second capacitor 9, a second resistor 10, a first full-bridge rectifier circuit 11, a second zener diode 12 and a third capacitor 13, one end of the second capacitor 9 is connected to the live wire of the ac power supply 1, the other end of the second capacitor is connected to the ac input end of the first full-bridge rectifier circuit 11 after passing through the second resistor 10, the other ac input end of the first full-bridge rectifier circuit 11 is connected to the zero line of the ac power supply 1, the second zener diode 12 and the third capacitor 13 are both connected in parallel to the positive and negative electrodes of the dc output end of the first full-bridge rectifier circuit 11, and the dc power supply formed on the third capacitor 13 provides dc power to other modules through the two wires of VDD and GND.

The voltage measurement enabling module of embodiment 2 includes a MOS transistor assembly, a first inverter 18, a first MOS transistor 19, and a fifth resistor 20, an output terminal of the first inverter 18 is connected to an enable terminal of the thyristor current driving module, VDD is connected to an input terminal of the first inverter 18 after passing through the fifth resistor 20, GND is connected to a source terminal of the first MOS transistor 19, a drain terminal of the first MOS transistor 19 is also connected to an input terminal of the first inverter 18, a source terminal of a p-channel MOS transistor 21 and a source terminal of an n-channel MOS transistor 22 in the MOS transistor assembly are connected to VDD and GND, respectively, a gate terminal of the n-channel MOS transistor 22 in the MOS transistor assembly is connected to a gate terminal of the first MOS transistor 19, in this embodiment, the MOS transistor assembly includes a plurality of p-channel MOS transistors 21 and a plurality of n-channel MOS transistors 22, the number of which is 2 respectively, and the p-channel MOS transistors 21 are connected in a symmetrical manner, and the gate terminal and drain terminal of the p-channel MOS transistors 21 are directly shorted together, then, the drain electrodes are connected with the source electrodes to form a p-channel MOS tube 21 connecting assembly, the 2 n-channel MOS tubes 22 are respectively formed by directly short-circuiting the grid electrodes and the drain electrodes of the n-channel MOS tubes, and then the drain electrodes are connected with the source electrodes to form an n-channel MOS tube 22 connecting assembly, and the two connecting assemblies are connected in series.

The working principle of the embodiment is as follows: firstly, a high-voltage capacitor and a resistor realize the voltage reduction and current limitation functions, then full-bridge rectification is performed by 4 diodes, and finally a low-voltage direct-current power supply VDD for supplying power to other modules is formed on a voltage stabilizing diode and the capacitor;

if VDD is greater than the sum of the threshold values of 4 MOS transistors and sufficient conduction current can be generated in the 4 MOS transistors, the current can form sufficient voltage drop on the resistor after being mirrored, and then can be output as an enabled logic signal en2 (i.e., the second enable terminal) after being shaped by the inverter.

While the invention has been described with reference to specific embodiments, the invention is not limited thereto, and various equivalent modifications and substitutions can be easily made by those skilled in the art within the technical scope of the invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.

Claims

1. A novel low-power-consumption leakage protector comprises an alternating current power supply (1), a silicon controlled rectifier (2), a signal processing module (3), a current transformer (4), a silicon controlled rectifier current driving module and a power taking circuit module, wherein the alternating current power supply (1) is connected into the power taking circuit module, the output end of the power taking circuit module generates a low-voltage direct current power supply to supply power to other modules, the signal of the current transformer (4) is output to the signal processing module (3), the signal processing module (3) generates an enabling signal to control the silicon controlled rectifier current driving module, the silicon controlled rectifier current driving module is connected with the control end of the silicon controlled rectifier (2), the novel low-power-consumption leakage protector is characterized by further comprising a voltage measuring enabling module, and the silicon controlled rectifier current driving module is also controlled by the enabling module, the voltage measurement enabling module only allows the output of the current for driving the silicon controlled rectifier (2) when monitoring that the output voltage of the power taking circuit module meets a certain condition, namely only when the voltage measurement enabling module and the signal processing module (3) both output effective enabling signals, the silicon controlled rectifier current driving module is allowed to output the conducting current for driving the silicon controlled rectifier (2);

the pressure measurement enables the module and includes third resistance (14), fourth resistance (15), reference voltage source (16) and first comparator (17), the signal input part positive pole of first comparator (17) passes through respectively third resistance (14) with correspond to connect in VDD link and GND link behind fourth resistance (15), reference voltage source (16) the positive negative pole with the positive negative pole of first comparator (17) all correspond to connect in the VDD link with the GND link is in order to receive the power supply, reference voltage output of reference voltage source (16) connect in the signal input part negative pole of first comparator (17), the output of first comparator (17) with the second number of silicon controlled current drive module makes the ability end connect.

2. The novel low-power-consumption leakage protector according to claim 1, wherein the power-taking circuit module comprises a first diode (5), a first resistor (6), a first capacitor (7) and a first zener diode (8), the anode of the first diode (5) is connected with the live wire of the alternating current power supply (1), the cathode of the first diode (5) is connected with the cathode of the first zener diode (8) after passing through the first resistor (6), the anode of the first zener diode (8) is connected with the zero line of the alternating current power supply (1), two ends of the first capacitor (7) are connected with the anode and the cathode of the first zener diode (8) in parallel, and the direct current power supply formed by the first capacitor (7) provides direct current power supply for other modules through a connecting end VDD and a GND (GND).

3. A novel low-power-consumption leakage protector comprises an alternating current power supply (1), a silicon controlled rectifier (2), a signal processing module (3), a current transformer (4), a silicon controlled rectifier current driving module and a power taking circuit module, wherein the alternating current power supply (1) is connected into the power taking circuit module, the output end of the power taking circuit module generates a low-voltage direct current power supply to supply power to other modules, the signal of the current transformer (4) is output to the signal processing module (3), the signal processing module (3) generates an enabling signal to control the silicon controlled rectifier current driving module, the silicon controlled rectifier current driving module is connected with the control end of the silicon controlled rectifier (2), the novel low-power-consumption leakage protector is characterized by further comprising a voltage measuring enabling module, and the silicon controlled rectifier current driving module is also controlled by the enabling module, the voltage measurement enabling module only allows the output of the current for driving the silicon controlled rectifier (2) when monitoring that the output voltage of the power taking circuit module meets a certain condition, namely only when the voltage measurement enabling module and the signal processing module (3) both output effective enabling signals, the silicon controlled rectifier current driving module is allowed to output the conducting current for driving the silicon controlled rectifier (2);

the load measurement enabling module comprises an MOS tube assembly, a first inverter (18), a first MOS tube (19) and a fifth resistor (20), the output end of the first inverter (18) is connected with the enable end II of the silicon controlled current driving module, a VDD connecting end passes through the fifth resistor (20) and then is connected with the input end of the first inverter (18), a GND connecting end is connected with the source electrode of the first MOS tube (19), the drain electrode of the first MOS tube (19) is also connected with the input end of the first inverter (18), the source electrode of a p-channel MOS tube (21) and the source electrode of an n-channel MOS tube (22) in the MOS tube assembly are correspondingly connected with the VDD connecting end and the GND connecting end respectively, and the grid electrode of the n-channel MOS tube (22) in the MOS tube assembly is connected with the grid electrode of the first MOS tube (19).

4. A novel low-power-consumption leakage protector according to claim 3, the power-taking circuit module comprises a second capacitor (9), a second resistor (10), a first full-bridge rectification circuit (11), a second Zener diode (12) and a third capacitor (13), one end of the second capacitor (9) is connected with the live wire of the alternating current power supply (1), the other end of the first full-bridge rectifying circuit is connected with the alternating current input end of the first full-bridge rectifying circuit (11) after passing through the second resistor (10), the other alternating current input end of the first full-bridge rectifying circuit (11) is connected with a zero line of the alternating current power supply (1), the second Zener diode (12) and the third capacitor (13) are connected with the positive electrode and the negative electrode of the direct current output end of the first full-bridge rectification circuit (11) in parallel, and a direct current power supply formed by the third capacitor (13) provides direct current power supply for other modules through a VDD connecting end and a GND connecting end.

5. A novel low power consumption leakage protector according to claim 3, characterized in that said MOS transistor assembly is composed of a plurality of p-channel MOS transistors (21) and a plurality of n-channel MOS transistors (22).