CN111244066B - Differential silicon through hole structure convenient for process production and capable of saving chip area and process thereof - Google Patents
Differential silicon through hole structure convenient for process production and capable of saving chip area and process thereof Download PDFInfo
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- CN111244066B CN111244066B CN201910734502.XA CN201910734502A CN111244066B CN 111244066 B CN111244066 B CN 111244066B CN 201910734502 A CN201910734502 A CN 201910734502A CN 111244066 B CN111244066 B CN 111244066B
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- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
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- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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Abstract
The invention discloses a differential silicon through hole structure which is convenient for process production and saves chip area and a process thereof. The device comprises a silicon substrate, a dielectric layer, a semiconductive carbon nanotube, a metallic carbon nanotube and a metal bonding pad; the silicon substrate is provided with two through holes, each through hole is composed of a semiconductor carbon nanotube layer and metallic carbon nanotube layers respectively arranged on two sides of the semiconductor carbon nanotube layer, and the semiconductor carbon nanotube layers completely block the two metallic carbon nanotube layers; a dielectric layer is arranged on the periphery of the silicon through hole; and metal bonding pads are arranged at the upper end and the lower end of the metallic carbon nanotube layer. The invention can reduce the number of the silicon through holes in the three-dimensional integrated circuit differential transmission structure, obviously reduce the size of the differential transmission structure and the occupied area thereof, and effectively improve the utilization rate of the chip area; the carbon nanotube bundle is used as a filling material of the transmission channel, and has excellent mechanical property, electrical property and thermal property.
Description
Technical Field
The invention belongs to the technical field of three-dimensional integration, and relates to a carbon nanotube-based differential silicon through hole structure capable of saving chip area and a design method thereof.
Background
The three-dimensional integrated circuit is a semiconductor integrated circuit in a novel packaging form, has the advantages of small packaging size, high interconnection efficiency, small power loss of a chip and low cost, solves the problem of chip size caused by the development of the traditional integrated circuit, and realizes the improvement of performance. Through the through-silicon-via technology, the vertical interconnection of the multilayer chips is realized, so that the three-dimensional integrated circuit can integrate a large number of functions in a small occupied space, particularly, an electric path passing through equipment is greatly shortened, and faster operation is realized.
The application of differential signals in high-speed circuit design is more and more extensive, and the most critical signals in the circuit are often designed by adopting a differential structure. Academic researchers have successfully established an equivalent circuit model in a differential silicon through hole mode of a ground-signal-ground structure, so that the transmission quality of high-speed signals is improved, and external electromagnetic interference is effectively inhibited. However, the existing ground-signal-ground structure differential silicon through hole needs two silicon through holes to transmit differential signals, and has the defect of large occupied chip area.
Carbon nanotubes, as a candidate material for copper replacement, have unique properties, which are specifically represented as: the material has good flexibility in mechanical property; the copper-based conductive material has good electrical conductivity, and the longitudinal conductivity of the copper-based conductive material is usually 3 to 4 orders of magnitude greater than that of copper; the material has good heat transfer performance in thermal property, and the thermal conductivity of the material doped with the carbon nano tube can be greatly improved.
In addition, the conductivity of the carbon nanotubes is anisotropic, and the longitudinal conductivity of the carbon nanotubes is usually 7 to 8 orders of magnitude greater than the transverse conductivity, i.e., the current is generally not transmitted transversely in the through silicon vias formed by the carbon nanotubes. Meanwhile, the semiconductor carbon nano tube is applied to the differential silicon through hole, so that the transverse conductivity is smaller and even negligible, and the differential transmission performance is improved. Therefore, the characteristics of the carbon nano tube and the differential structure are combined with the through silicon via technology, the size of the existing differential transmission structure can be reduced, the utilization rate of the chip area is improved, and great improvement is inevitably brought to the three-dimensional integrated circuit.
Disclosure of Invention
The invention aims to provide a carbon nanotube-based differential silicon through hole structure which saves chip area in order to overcome the defects of the prior art.
The technical scheme adopted by the invention is as follows:
the invention relates to a differential silicon through hole structure which comprises a silicon substrate, a dielectric layer, a semiconducting carbon nano tube, a metallic carbon nano tube and a metal bonding pad, wherein the dielectric layer is formed on the silicon substrate; the silicon substrate is provided with two cylindrical through holes which are arranged at intervals, each through hole is composed of a semiconductor carbon nanotube layer positioned in the middle and metallic carbon nanotube layers respectively arranged on two sides of the semiconductor carbon nanotube layer, and the semiconductor carbon nanotube layers completely block the two metallic carbon nanotube layers; the two silicon through holes form a differential silicon through hole;
a circular ring-shaped medium layer is arranged on the periphery of the silicon through hole; the dielectric layer is made of oxide.
And the upper end and the lower end of the metallic carbon nanotube layer are provided with metal bonding pads, and eight metal bonding pads are arranged in total.
The eight metal pads are completely consistent in structure and completely cover the end face of the metallic carbon nanotube layer.
Another objective of the present invention is to provide a manufacturing process of the above differential through silicon via structure, including the following steps:
the method comprises the following steps: depositing a layer of oxide on a growth substrate silicon substrate by a sub-atmospheric pressure chemical vapor deposition technology, and preparing cylindrical metal on the oxide by adopting an electrochemical deposition method;
step two: covering the deposited cylindrical metal by using a mask plate, and exposing the middle part;
step three: growing a semiconductor carbon nanotube bundle in the middle part of the exposed cylindrical metal by a chemical vapor deposition technology;
step four: removing the mask plate, and growing metallic carbon nanotube bundles on two sides of the grown semiconducting carbon nanotube bundles by a chemical vapor deposition technology;
step five: densifying the grown semiconducting carbon nanotube bundle and the grown metallic carbon nanotube bundle by a steam densification process;
step six: etching two cylindrical grooves arranged at intervals on a silicon substrate by a reactive ion etching technology, wherein the bottom ends of the two cylindrical grooves are closed;
step seven: bonding the semiconductor carbon nanotube bundle and the metallic carbon nanotube bundle which are densified with the bottom end of the cylindrical groove in the sixth step, and separating a growth substrate;
step eight: preparing a dielectric layer at the gap between the cylindrical groove and the semiconductive carbon nanotube bundle and the metallic carbon nanotube bundle by a sub-atmospheric pressure chemical vapor deposition technology;
step nine: performing surface polishing on the end faces of the top ends of the semiconductive carbon nanotube bundle and the metallic carbon nanotube bundle by adopting a chemical mechanical polishing technology;
step ten: forming a metal bonding pad on the polished top end surface of the semiconductor carbon nanotube bundle and the polished top end surface of the metallic carbon nanotube bundle through chemical vapor deposition;
step eleven: turning over the bottom surface and the top surface of the silicon substrate, and sequentially carrying out rough grinding and fine grinding on the bottom surface to thin the silicon substrate until the semiconductive carbon nanotube bundle and the metallic carbon nanotube bundle are exposed;
step twelve: and removing the damage layer on the surface layer on the bottom surface of the silicon substrate through wet etching, and forming a metal bonding pad on the end surfaces of the semiconductor carbon nanotube bundle and the metallic carbon nanotube bundle exposed on the bottom surface of the silicon substrate through chemical vapor deposition.
The invention has the following beneficial effects:
1. the invention takes the metallic carbon nano tube as a transmission channel, the metallic carbon nano tube bundles on two adjacent sides of the two silicon through holes as signal channels, and respectively transmit positive signals and negative signals, and the differential structure design of the positive signals and the negative signals can effectively inhibit common mode noise and electromagnetic interference and improve the transmission quality of high-speed signals;
2. the invention can reduce the number of the silicon through holes in the three-dimensional integrated circuit differential transmission structure, obviously reduce the size of the differential transmission structure and the occupied area thereof, and effectively improve the utilization rate of the chip area;
3. the invention uses the carbon nanotube bundle as the filling material of the transmission channel, and has excellent mechanical property, electrical property and thermal property.
Drawings
FIGS. 1a and 1b are side and top views of a carbon nanotube based differential through silicon via structure according to the present invention;
FIGS. 2a and 2b are side and top views of a growth substrate and cylindrical metal;
FIGS. 3a and 3b are side and top views of a reticle masking cylinder;
FIGS. 4a and 4b are side and top views of CVD growth of bundles of semiconducting carbon nanotubes;
FIGS. 5a and 5b are side and top views of a metallic carbon nanotube bundle grown by chemical vapor deposition with the reticle removed;
FIGS. 6a and 6b are side and top views of a bundle of carbon nanotubes after a vapor densification process;
FIGS. 7a and 7b are side and top views of two cylindrical recesses set at a reactive ion etch distance;
FIG. 8 is a side view of a carbon nanotube bundle in combination with two cylindrical grooves;
FIGS. 9a and 9b are side and top views of a gap-deposited dielectric layer after a carbon nanotube bundle and two cylindrical grooves are combined;
FIGS. 10a and 10b are side and top views of a chemical vapor deposition formed metal pad;
FIGS. 11a and 11b are side and top views of a silicon substrate after rough and finish grinding with reference lines and carbon nanotube bundles exposed;
FIGS. 12a and 12b are side and top views of a metal pad formed by chemical vapor deposition on the exposed surface of the bundle of carbon nanotubes after grinding;
FIG. 13 is a graph comparing the differential mode transmission performance of the present invention with a through-silicon via structure without the incorporation of a semiconductor carbon nanotube structure;
all figures are labeled as follows: 100 to 108-metal pads; 109-a dielectric layer; 110-a silicon substrate; 111-bundles of semiconducting carbon nanotubes; 112-metallic carbon nanotube bundles; 113-cylindrical metal; 114-mask.
Detailed Description
The invention is further described below with reference to the accompanying drawings.
As shown in fig. 1a and b, a differential through silicon via structure includes a silicon substrate, a dielectric layer, a semiconducting carbon nanotube bundle, a metallic carbon nanotube bundle, and eight metal pads;
cylindrical silicon through holes are arranged in the silicon substrate 110 at intervals;
the through silicon via is surrounded by a semiconductor carbon nanotube bundle 111 layer and two metallic carbon nanotube bundles 112 layers arranged on two sides of the semiconductor layer to form a cylinder shape and is used for transmitting current. A cylindrical dielectric layer 109 is arranged on the periphery of the silicon through hole; the dielectric layer 109 is made of oxide for isolating dc leakage. The through silicon via composed of the semiconducting carbon nanotube bundle 111 and the metallic carbon nanotube bundle 112 and both ends of the dielectric layer 109 are open; one end of the metallic carbon nanotube bundle 112 of the two through silicon vias is provided with metal pads 101 and 102 and metal pads 105 and 106, and the other end is provided with metal pads 103 and 104 and metal pads 107 and 108; the eight metal bonding pads have completely consistent structures, and the cross sections of the eight metal bonding pads are all arc-shaped; the metal pads 101 and 102 and the metal pads 105 and 106 at one end of the through-silicon-via are arranged facing each other at a pitch, and the metal pads 103 and 104 and the metal pads 107 and 108 at the other end are arranged facing each other at a pitch. The metallic carbon nanotube bundles on two adjacent sides of the two through silicon vias are used as signal channels, namely, a positive signal is transmitted between the metal pad 102 and the metal pad 104, a negative signal is transmitted between the metal pad 105 and the fourth metal pad 107, or a negative signal is transmitted between the metal pad 105 and the metal pad 107, and a positive signal is transmitted between the metal pad 102 and the fourth metal pad 104, so that differential signal transmission is realized.
A preparation method of a carbon nanotube-based differential silicon through hole structure comprises the following steps:
the method comprises the following steps: depositing a layer of oxide 109 on a growth substrate silicon substrate 110 by a sub-atmospheric pressure chemical vapor deposition technique, and preparing cylindrical metal 113 on the oxide by an electrochemical deposition method;
step two: covering the deposited cylindrical metal 113 by using a mask 114, and exposing the middle part;
step three: growing a semiconductor carbon nanotube bundle 111 in the middle of the exposed cylindrical metal 113 by chemical vapor deposition;
step four: removing the mask plate 114, and growing metallic carbon nanotube bundles 112 on both sides of the grown semiconducting carbon nanotube bundles 111 by chemical vapor deposition;
step five: densifying the grown semiconducting carbon nanotube bundles 111 and metallic carbon nanotube bundles 112 by a steam densification process;
step six: etching two cylindrical grooves arranged at intervals on a silicon substrate 110 by a reactive ion etching technology, wherein the bottom ends of the two cylindrical grooves are closed;
step seven: bonding the densified semiconducting carbon nanotube bundle 111 and the densified metallic carbon nanotube bundle 112 with the bottom end of the cylindrical groove in the sixth step at 200 ℃, and separating the growth substrate;
step eight: preparing a dielectric layer 109 at the gap between the cylindrical groove and the semiconducting carbon nanotube bundle 111 and the metallic carbon nanotube bundle 112 by a sub-atmospheric pressure chemical vapor deposition technology;
step nine: performing surface polishing on the end faces of the top ends of the semiconducting carbon nanotube bundles 111 and the metallic carbon nanotube bundles 112 by adopting a chemical mechanical polishing technology;
step ten: forming metal pads 101, 102, 105 and 106 on the polished top end surfaces of the semiconductive carbon nanotube bundles 111 and the metallic carbon nanotube bundles 112 through chemical vapor deposition;
step eleven: turning over the bottom surface and the top surface of the silicon substrate 110, and sequentially performing rough grinding and finish grinding on the bottom surface to thin the silicon substrate 110 until the semiconducting carbon nanotube bundles 111 and the metallic carbon nanotube bundles 112 are exposed;
step twelve: the damaged layer on the surface layer is removed from the bottom surface of the silicon substrate 110 by wet etching, and the metal pads 103, 104, 107, 108 are formed on the exposed end surfaces of the semiconducting carbon nanotube bundles 111 and the metallic carbon nanotube bundles 112 on the bottom surface of the silicon substrate by chemical vapor deposition.
In one embodiment, the through-silicon vias have a radius of 5um and a height of 50um, and the thickness of the middle semiconducting carbon nanotube bundle 111 is 0.1 um; the material of the silicon through hole peripheral medium layer 109 is silicon dioxide, and the thickness is 1 um; the distance between the two silicon through holes is 30 um. The transmission performance of the structure was analyzed by a verified circuit model, and the differential mode transmission performance of the structure of the present invention and the through-silicon via structure without introducing semiconducting carbon nanotubes was compared, as shown in fig. 13. As can be seen from the figure, the differential mode transmission performance of the structure of the present invention is more advantageous in the low frequency range than the differential mode transmission performance without introducing the structure of the semiconducting carbon nanotube.
Claims (3)
1. The preparation process of the differential silicon through hole structure comprises a silicon substrate, a dielectric layer, a semiconductive carbon nanotube, a metallic carbon nanotube and a metal bonding pad;
the silicon substrate is provided with two cylindrical through holes which are arranged at intervals, each through hole is composed of a semiconductor carbon nanotube layer positioned in the middle and metallic carbon nanotube layers respectively arranged on two sides of the semiconductor carbon nanotube layer, and the semiconductor carbon nanotube layers completely block the two metallic carbon nanotube layers;
a dielectric layer is arranged on the periphery of the silicon through hole; the dielectric layer is made of oxide;
the upper end and the lower end of the metallic carbon nanotube layer are respectively provided with a metal bonding pad;
the metal bonding pad completely covers the end face of the metallic carbon nanotube layer;
the preparation method is characterized by comprising the following steps:
the method comprises the following steps: depositing a layer of oxide on a growth substrate silicon substrate by a sub-atmospheric pressure chemical vapor deposition technology, and preparing cylindrical metal on the oxide by adopting an electrochemical deposition method;
step two: covering the deposited cylindrical metal by using a mask plate, and exposing the middle part;
step three: growing a semiconductor carbon nanotube bundle in the middle part of the exposed cylindrical metal by a chemical vapor deposition technology;
step four: removing the mask plate, and growing metallic carbon nanotube bundles on two sides of the grown semiconducting carbon nanotube bundles by a chemical vapor deposition technology;
step five: densifying the grown semiconducting carbon nanotube bundle and the grown metallic carbon nanotube bundle by a steam densification process;
step six: etching two cylindrical grooves arranged at intervals on a silicon substrate by a reactive ion etching technology, wherein the bottom ends of the two cylindrical grooves are closed;
step seven: bonding the semiconductor carbon nanotube bundle and the metallic carbon nanotube bundle which are densified with the bottom end of the cylindrical groove in the sixth step, and separating a growth substrate;
step eight: preparing a dielectric layer at the gap between the cylindrical groove and the semiconductive carbon nanotube bundle and the metallic carbon nanotube bundle by a sub-atmospheric pressure chemical vapor deposition technology;
step nine: performing surface polishing on the end faces of the top ends of the semiconductive carbon nanotube bundle and the metallic carbon nanotube bundle by adopting a chemical mechanical polishing technology;
step ten: forming a metal bonding pad on the polished top end surface of the semiconductor carbon nanotube bundle and the polished top end surface of the metallic carbon nanotube bundle through chemical vapor deposition;
step eleven: turning over the bottom surface and the top surface of the silicon substrate, and sequentially carrying out rough grinding and fine grinding on the bottom surface to thin the silicon substrate until the semiconductive carbon nanotube bundle and the metallic carbon nanotube bundle are exposed;
step twelve: and removing the damage layer on the surface layer on the bottom surface of the silicon substrate through wet etching, and forming a metal bonding pad on the end surfaces of the semiconductor carbon nanotube bundle and the metallic carbon nanotube bundle exposed on the bottom surface of the silicon substrate through chemical vapor deposition.
2. The process of claim 1, wherein the through-silicon-via has a radius of
Height of
The thickness of the semiconductive carbon nanotube layer is
(ii) a The dielectric layer is made of silicon dioxide and has a thickness of
(ii) a The distance between two through silicon vias is
。
3. The manufacturing process of the differential silicon through hole structure as claimed in claim 1 or 2, wherein the metallic carbon nanotube layers on two adjacent sides of the two silicon through holes are used as signal channels for transmitting positive signals and negative signals respectively.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106449574A (en) * | 2016-12-05 | 2017-02-22 | 中国科学院微电子研究所 | Coaxial differential pair silicon through hole structure |
| CN106782774A (en) * | 2017-01-10 | 2017-05-31 | 京东方科技集团股份有限公司 | Transparent conductive film, its preparation method and device |
| CN108538811A (en) * | 2018-03-20 | 2018-09-14 | 杭州电子科技大学 | With the low stopping area differential transfer structure and its interlayer interconnection structure of silicon hole |
| CN109449138A (en) * | 2018-09-28 | 2019-03-08 | 杭州电子科技大学 | A kind of more bit through-silicon via structures of difference and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106449574A (en) * | 2016-12-05 | 2017-02-22 | 中国科学院微电子研究所 | Coaxial differential pair silicon through hole structure |
| CN106782774A (en) * | 2017-01-10 | 2017-05-31 | 京东方科技集团股份有限公司 | Transparent conductive film, its preparation method and device |
| CN108538811A (en) * | 2018-03-20 | 2018-09-14 | 杭州电子科技大学 | With the low stopping area differential transfer structure and its interlayer interconnection structure of silicon hole |
| CN109449138A (en) * | 2018-09-28 | 2019-03-08 | 杭州电子科技大学 | A kind of more bit through-silicon via structures of difference and preparation method thereof |
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