CN110970185B - High-temperature-resistant negative temperature coefficient thermistor and manufacturing method thereof - Google Patents
High-temperature-resistant negative temperature coefficient thermistor and manufacturing method thereof Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
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- H—ELECTRICITY
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- H01C1/02—Housing; Enclosing; Embedding; Filling the housing or enclosure
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- H—ELECTRICITY
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- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/02—Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistors with envelope or housing
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Abstract
The invention discloses a high temperature resistant negative temperature coefficient thermistor and a manufacturing method thereof. The high-temperature durable thermistor element has the functions of explosion prevention, water prevention, corrosion resistance and the like, and can be used in an environment with the temperature of 900 ℃.
Description
Technical Field
The invention belongs to the field of electronic element manufacturing, and particularly relates to a high-temperature-resistant negative temperature coefficient thermistor and a manufacturing method thereof.
Background
A conventional negative temperature coefficient thermistor (NTC) is manufactured by doping two or more transition metal oxides such as cobalt oxide, manganese oxide, nickel oxide, iron oxide, copper oxide and aluminum oxide through a tape casting or dry pressing forming mode to prepare slurry or powder, forming, sintering and electrode manufacturing are adopted to prepare an NTC thermistor chip, and then processes such as welding, encapsulation or glass packaging are adopted to prepare the NTC thermistor, the NTC thermistor is widely applied within the temperature range of-50-350 ℃, but the NTC thermistor of the type exceeding 350 ℃ cannot be reliably used.
Disclosure of Invention
In view of the defects of the thermistor element in the prior art, the invention develops a novel thermistor with explosion-proof, waterproof, corrosion-resistant and high-temperature-resistant performances. The thermistor adopts a novel structure, the lead part of the thermistor is in direct contact with the chip part, the high-temperature ceramic sleeve is wrapped outside the chip, the glaze water sealing layer is further wrapped outside the ceramic sleeve, and no other non-corrosion and non-heat-resistant part exists, so that the reliability under the high-temperature condition is greatly enhanced.
Specifically, the invention adopts the following technical scheme:
a high-temp. resistant negative temp. coefficient thermistor is composed of chip, high-temp. ceramic sleeve, enamel sealing layer and lead wire, and features that the chip is filled in the high-temp. ceramic sleeve, the lead wire is directly embedded in the chip, and the lead wire are connectedThe chip materials are in direct contact, the ceramic sleeve and the chip are integrally sealed by a glaze water sealing layer, and the lead is a high-temperature-resistant metal lead. In the element of the invention, the glaze water sealing layer is formed by burning after sealing the high-temperature resistant glaze water, the chip is formed by filling chip slurry made of a metal oxide mixture and a binder into a high-temperature ceramic sleeve and inserting a lead wire and then burning, wherein the metal oxide is prepared by oxide or mineral of manganese, cobalt, nickel, iron, copper, aluminum, yttrium, zirconium and other metals according to a certain proportion, for example, the metal oxide contains SiO2、CuO、Mn3O4、NiO、Fe2O3、Al2O3、Co3O4Combinations of any of the above. In the chip paste, a binder is included or not included, and in a preferred embodiment, the binder is a water-soluble binder, such as polyvinyl alcohol, starch, dextrin, carboxymethyl cellulose, and the like. The binder may be added to the slurry as a dry powder or as an aqueous solution, for example polyvinyl alcohol added to the slurry as a dry powder or as an aqueous solution. In a preferred embodiment, a dispersant is further included, such as polyacrylamide, sodium polyacrylate, sodium hexametaphosphate, sodium pyrophosphate, and the like, and in a more preferred embodiment, the dispersant is polyacrylamide. Preferably, the lead wire is a platinum lead wire.
The invention also discloses a manufacturing method of the high-temperature-resistant negative temperature coefficient thermistor, which is characterized by comprising the following steps of: 1) preparing chip slurry: weighing metal oxide in proportion, grinding to required fineness, and preparing into slurry with water content of 30-50%; 2) preparing a pre-sintering body: arranging the leads in a group of two leads according to a required interval, filling chip slurry into the high-temperature ceramic sleeve and inserting the arranged leads, or arranging the leads in the high-temperature ceramic sleeve in advance and then filling the chip slurry, wherein the leads are inserted into the slurry by a required depth; 3) and (3) sintering: the prepared pre-sintering body is sent into a sintering furnace to be sintered at the high temperature of 1400 ℃ of 1000-one, so as to obtain a blank body; 4) preparing a glaze water sealing layer: and immersing the sintered blank body into high-temperature-resistant glaze water to integrally seal the high-temperature ceramic sleeve and the chip ceramic material, and then sintering at the temperature of 600-900 ℃ to form a glaze water sealing layer to obtain the high-temperature-resistant negative temperature coefficient thermistor.
In the method of the invention, the chip slurry is prepared by grinding a mixture of metal oxide and grinding fluid in a mill, wherein the ratio of the metal oxide to the grinding fluid is 1: 0.7-1.0. Wherein the grinding liquid is water or ethanol water solution with the concentration of 5-20%.
Preferably, the slurry obtained after the primary grinding is dried, and then the grinding fluid is added for secondary grinding to a desired fineness. Further preferably, the method further comprises, after drying and before secondary grinding, pre-burning the dried powder in a pre-burning furnace, and then performing secondary grinding. When the pre-firing is performed, the pre-firing temperature is preferably 850 ℃ 15 ℃ and the pre-firing time is preferably 2. + -. 0.2 hours.
In a preferred embodiment, the slurry is discharged after grinding, and preferably the slurry further comprises a step of adding a binder and a dispersant, and the slurry is discharged after grinding again after adding the binder and the dispersant. In a more preferred embodiment, the slurry is discharged after grinding after adding the polyvinyl alcohol binder in an amount of 0-3% by weight of the powder and the polyacrylamide dispersant in an amount of 0.2-0.6% by weight of the powder, and is discharged after grinding again.
The high-temperature glaze water used in the method of the invention has the function of providing wear resistance and corrosion resistance. In view of the required properties of glaze water and the firing conditions of the aforementioned chip, the glaze forming conditions are higher than the glass forming temperature but need to be lower than the forming temperature of ordinary ceramics. In a preferred common scheme, the glaze water comprises 15% of potassium feldspar, 16% of albite, 14% of talcum, 9% of calcite, 12.5% of kaolin, 21% of quartz, 2% of borax, 2.5% of barium carbonate and 8% of zinc oxide, and the raw materials are ball-milled and added with proper amount of water to prepare slurry to prepare the high-temperature-resistant glaze water.
The negative temperature coefficient thermistor adopts a structure that a chip is directly contacted with a lead wire, a high-temperature ceramic sleeve is wrapped outside the chip, and a high-temperature-resistant glaze water sealing layer is completely sealed outside the ceramic sleeve. The structure of the invention does not adopt components and structures which affect the reliability under high temperature conditions, thereby improving the reliability of the element under high temperature. During manufacturing, the lead forms a whole body of the chip and the chip slurry at the front end of the lead in a manner of pouring the chip slurry, so that the manufactured lead is embedded in the chip, the full combination of the chip and the chip slurry is ensured, and the combination strength is improved. With the structure, the silver paste is not required to be welded, so that the use environment is not limited by the self-performance of the silver paste, and the obtained element can adapt to higher use temperature.
Drawings
FIG. 1 is a schematic structural diagram of an embodiment of the present invention;
fig. 2 is a perspective structural diagram of the element of the present invention.
In the figure: 1. chip ceramic material; 2. a lead wire; 3. a high temperature ceramic sleeve; 4. and (5) sealing the glaze water layer. Wherein L is the lead pitch and I is the lead buried depth.
Detailed Description
The invention provides a novel thermistor manufacturing method and a resistor element manufactured by the method. In the existing thermistor manufacturing method, metal oxides are weighed in proportion and ground to prepare slurry, then the slurry is preformed and fired to prepare a chip, then a lead is welded on the chip, and then the chip is encapsulated. The resistance element manufactured by the conventional manufacturing method can endure a high temperature below 350 c due to the properties of the solder and the encapsulant itself, but when the usage environment exceeds 350 c, the performance of the element becomes unreliable.
In view of the above, the present invention provides a new method for manufacturing a thermistor device. In the method, the process of pre-manufacturing a formed chip in the traditional method is changed, the chip slurry is poured into the high-temperature ceramic sleeve to be directly formed together with the embedded lead, the ceramic sleeve is integrally coated with high-temperature glaze water after being sintered at high temperature, and then the element is directly fired.
The method of the invention comprises the following steps: 1) preparing chip slurry: weighing metal oxide in proportion, grinding to required fineness, and preparing into slurry with water content of 30-50%; 2) preparing a pre-sintering body: arranging the leads in a group of two leads according to a required interval, filling chip slurry into the high-temperature ceramic sleeve and inserting the arranged leads, or arranging the leads in the high-temperature ceramic sleeve in advance and then filling the chip slurry, wherein the leads are inserted into the slurry by a required depth; 3) and (3) sintering: the prepared pre-sintering body is sent into a sintering furnace to be sintered at the high temperature of 1400 ℃ of 1000-one, so as to obtain a blank body; 4) preparing a glaze water sealing layer: and immersing the sintered blank body into high-temperature-resistant glaze water to integrally seal the high-temperature ceramic sleeve and the chip ceramic material, and then sintering at the temperature of 600-900 ℃ to form a glaze water sealing layer to obtain the high-temperature-resistant negative temperature coefficient thermistor.
The negative temperature coefficient thermistor with the appearance adopts a high-temperature-resistant ceramic sleeve as an outer protective sleeve, two high-temperature-resistant platinum wires as electrode leads, and negative temperature coefficient slurry is filled in the sleeve and sintered into ceramic at the temperature of 1000-1400 ℃. The outer ceramic sleeve is sealed by high-temperature resistant glaze water in a dipping and sticking mode, and forms a sealing layer after being sintered at the temperature of 600-900 ℃, so that the sealing layer is fused with the thermistor ceramic, and the sealing layer has the functions of water resistance, corrosion resistance and the like.
As shown in fig. 1, when the platinum wire lead and the chip paste are bonded together in the high-temperature ceramic sleeve by means of pouring, the bonding between the chip paste and the lead is tighter and firmer, after sintering, the chip paste is vitrified to form a ceramic material, and the ceramic material is fully bonded with the lead, so that the performance of the resistor element is more easily exerted. And after the chip is sintered, covering a layer of high-temperature-resistant glaze water on the high-temperature ceramic sleeve in a dipping mode, and further sintering to obtain the element with the high-temperature-resistant glaze water sealing layer. In this way, the chip and the leads are further bonded more firmly, the chip and the leads are protected as a whole, and the direct deep burying way also makes the bonding more direct and firm.
The resistance range and the resistance precision of the core element of the conventional negative temperature coefficient thermistor are related to the thickness of a chip and the electrode area, and the resistance range and the resistance precision of the core element of the thermistor with the structure are related to the space size (figure L value) of the leads of the two platinum wires and the lead embedding depth (when the leads are directly inserted into the bottom, the height of the inner wall of the ceramic is also considered, and the figure I value) as shown in figure 2.
The thermistor is characterized in that the whole negative temperature coefficient thermistor is formed by sintering at the temperature of 1000-1400 ℃, can be used in the environment with the temperature of 900 ℃, and solves the problem that the negative temperature coefficient thermistor cannot be used in the high-temperature environment.
The invention provides a high-temperature-resistant negative temperature coefficient thermistor which comprises a chip, a high-temperature ceramic sleeve, a glaze water sealing layer and a lead, wherein the chip is filled in the high-temperature ceramic sleeve, the lead is directly embedded in the chip, the lead is directly contacted with a chip material, the ceramic sleeve and the chip are integrally sealed by the glaze water sealing layer, and the lead is a high-temperature-resistant metal lead. In the element of the invention, the glaze water sealing layer is formed by burning after sealing the high-temperature resistant glaze water, the chip is formed by filling chip slurry made of a metal oxide mixture and a binder into a high-temperature ceramic sleeve and inserting a lead wire and then burning, wherein the metal oxide is prepared by oxide or mineral of manganese, cobalt, nickel, iron, copper, aluminum, yttrium, zirconium and other metals according to a certain proportion, for example, the metal oxide contains SiO2、CuO、Mn3O4、NiO、Fe2O3、Al2O3、Co3O4Combinations of any of the above. In the chip paste, a binder is included or not included, and in a preferred embodiment, the binder is polyvinyl alcohol added to the paste in the form of a dry powder or an aqueous solution. The high temperature resistant lead wire comprises various suitable metal or metal alloy and lead wires made of non-metal conductive materials, such as: metal lead wires of platinum, rhodium, tungsten, tantalum, niobium, etc., metal alloy lead wires of iron-chromium-aluminum-magnesium alloy, nickel-chromium alloy, etc., lead wires of carbon fiber, etc., ZnO doped with Al2O3In a preferred embodiment, the lead wire is a platinum lead wire.
The invention further discloses a manufacturing method of the high-temperature-resistant negative temperature coefficient thermistor, which comprises the following steps: 1) preparing chip slurry: weighing metal oxide in proportion, grinding to required fineness, and preparing into slurry with water content of 30-50%; 2) preparing a pre-sintering body: arranging the leads in a group of two leads according to a required interval, filling chip slurry into the high-temperature ceramic sleeve and inserting the arranged leads, or arranging the leads in the high-temperature ceramic sleeve in advance and then filling the chip slurry, wherein the leads are inserted into the slurry by a required depth; 3) and (3) sintering: the prepared pre-sintering body is sent into a sintering furnace to be sintered at the high temperature of 1400 ℃ of 1000-one, so as to obtain a blank body; 4) preparing a glaze water sealing layer: and immersing the sintered blank body into high-temperature-resistant glaze water to integrally seal the high-temperature ceramic sleeve and the chip ceramic material, and then sintering at the temperature of 600-900 ℃ to form a glaze water sealing layer to obtain the high-temperature-resistant negative temperature coefficient thermistor.
In the method of the invention, the chip slurry is prepared by grinding a mixture of metal oxide and grinding fluid in a mill, wherein the ratio of the metal oxide to the grinding fluid is 1: 0.7-1.0. Wherein the grinding fluid is water or a process control agent is added thereto, water can also be regarded as one of the process control agents, but in the method of the present invention, the end point is not only to obtain particles of the metal mixture, but more importantly to obtain a slurry having a suitable viscosity and a uniform distribution of the particles of the metal mixture, and water is an important constituent of the slurry. The process control agent is typically an alcohol, ester, or like compound, such as ethanol, propanol, propylene glycol, stearic acid, or the like. In a preferred embodiment of the invention, and in accordance with the object of the invention, the process control agent used is an aqueous ethanol solution having a concentration of 5 to 20%, which is effective in promoting a uniform distribution of the particles in the slurry mixture during the milling process.
Preferably, the slurry obtained after the primary grinding is dried, and then the grinding fluid is added for secondary grinding to a desired fineness. Further preferably, the method further comprises the steps of pre-sintering the dried powder in a pre-sintering furnace before secondary grinding after drying, and then performing secondary grinding, so that the processes of pre-synthesizing, homogenizing and activating the particle structure of the powder are performed, and the final product has better electrical properties. When the pre-firing is performed, the pre-firing temperature is preferably 850 ℃ 15 ℃ and the pre-firing time is preferably 2. + -. 0.2 hours.
In a preferred embodiment, a binder and a dispersant are also added to the finally obtained slurry, and the binder and the dispersant are preferably added after grinding the slurry and before discharging, namely, the binder and the dispersant are added to the mill before discharging and are mixed in the slurry by the operation of the mill again or are added during the operation of the mill. Therefore, the method of the present invention preferably further comprises the steps of: adding polyvinyl alcohol adhesive and polyacrylamide dispersant in 0-3 wt% of the powder material, grinding again and discharging. The choice of binder can be varied and the preferred solution is polyvinyl alcohol, taking into account the effect on the viscosity of the final chip slurry and the elimination of the effect on the properties of the final product during the process. The choice of the dispersant can be various, and the preferable scheme is polyacrylamide which is an organic high polymer material in consideration of the influence of various dispersants on the chip slurry.
In the scheme of the invention, the ceramic sleeve is made of an electrically common insulating ceramic material, such as high-alumina porcelain, steatite porcelain and the like. And finally, manufacturing a glaze water sealing layer on the blank obtained by sintering so as to protect the chip in the ceramic sleeve. The glaze water layer is a layer of glass substance and has the function of corrosion resistance. However, conventional glass protective layers are susceptible to deformation and denaturation at the high temperatures to which the elements of the present invention are applied, resulting in loss of protection. Further, considering the molding conditions of the sintered body, the glaze forming conditions of the ordinary high-temperature ceramics may also have an influence on the performance of the resistance element main body. Therefore, glaze water used for low-temperature and low-temperature ceramics is preferably used. In one general embodiment, the present invention utilizes the following formulation: 15% of potassium feldspar, 16% of albite, 14% of talc, 9% of calcite, 12.5% of kaolin, 21% of quartz, 2% of borax, 2.5% of barium carbonate and 8% of zinc oxide. The above ingredients are ground in a ball mill to a desired fineness, for example to 250 mesh. During grinding, 30-50% of water by weight of the raw materials can be added, the specific water addition amount can be adjusted according to the required viscosity, for example, the common water addition amount is 45%, and glaze water slurry is obtained by directly discharging.
The negative temperature coefficient thermistor has the lead directly contacted with the ceramic material by inserting, and the inserting depth is required to be consistent in consideration of the performance of a chip. The thermistor is characterized in that the whole negative temperature coefficient thermistor is formed by sintering at the temperature of 1000-1400 ℃, can be used in the environment with the temperature of 900 ℃, and solves the problem that the negative temperature coefficient thermistor cannot be used in the high-temperature environment.
The invention is further illustrated by the following examples.
Preparation of chip slurry
The chip slurry is prepared by mixing metal oxides (manganese, cobalt, nickel, iron, copper, aluminum, yttrium, zirconium and the like) according to a certain proportion, grinding for the first time, drying, pre-sintering, grinding for the second time and adding a binder according to a certain proportion, and the specific process comprises the following steps:
1. preparing materials: the raw materials are prepared according to a certain molar ratio;
2. primary grinding: grinding the prepared metal oxide powder in a planetary ball mill according to a certain material-ball ratio to obtain a primary grinding material;
3. drying: pouring the primary grinding material into a stainless steel disc, and placing the stainless steel disc in an oven for drying;
4. pre-burning: sieving the dried powder with a stainless steel sieve of 20 meshes, crushing, pouring into a high-temperature resistant porcelain dish, putting into a presintering furnace for presintering at the presintering temperature of 850 +/-15 ℃, and preserving heat for 2 hours, wherein the cooling mode is furnace natural cooling;
5. and (3) secondary grinding: grinding the pre-sintered powder in the same way as the first grinding;
6. adding a binder and a dispersant: adding a polyvinyl alcohol adhesive and a polyacrylamide dispersing agent into the mill before secondary grinding and discharging according to requirements, grinding for 30 minutes, and discharging.
Secondly, preparing a pre-sintered body
1. Preparing a lead: arranging the leads on the tooling plate, wherein every two leads form a group, the interval between the two leads is 1-3 mm, and one end of each lead is tidily arranged to ensure the consistency of insertion;
2. tape pasting: adhering an adhesive tape on the tooling plate, fixing the lead on the tooling plate and ensuring that one end of the lead is exposed to a sufficient length;
3. preparing a ceramic sleeve: arranging the high-temperature ceramic sleeves at a required interval, pouring chip slurry into the high-temperature ceramic sleeves, and inserting the prepared leads into the high-temperature ceramic sleeves to a required depth, or inserting the leads into the ceramic sleeves to a proper depth first and then pouring the required amount of slurry.
Thirdly, sintering
And transferring the obtained pre-sintered body to a sintering tool, and sintering in a sintering furnace at the sintering temperature of 1000-1400 ℃ for 2 +/-0.2 hours to obtain a green body.
Fourthly, manufacturing a glaze water sealing layer
And immersing the sintered blank body into high-temperature-resistant glaze water to integrally seal the high-temperature ceramic sleeve and the chip ceramic material, and then sintering at the temperature of 600-900 ℃ to form a glaze water sealing layer to obtain the high-temperature-resistant negative temperature coefficient thermistor.
Example 1
The method comprises the steps of preparing materials according to a molar ratio of Mn to Ni to Al =40 to 50 to 10, feeding and grinding the materials into a planetary ball mill at a speed of V = 200-220 rpm at a ball to water =1 to 4 to 0.9 mass ratio, rotating the materials forwards and backwards every 30 minutes, grinding the materials for 8 hours, and discharging the materials. Pouring the slurry into a stainless steel plate, placing the stainless steel plate into an oven, and drying the stainless steel plate at the temperature of 80 +/-10 ℃ for 12 +/-1 hour. Sieving the dried powder with a stainless steel sieve of 20 meshes, crushing, pouring into a high-temperature resistant porcelain dish, putting into a pre-sintering furnace for pre-sintering, wherein the pre-sintering temperature is as follows: keeping the temperature for 2 +/-0.2 hours at 850 +/-15 ℃, turning off the power supply after the temperature is up to the temperature, and taking out the product after the temperature is naturally cooled to 40-60 ℃. And (3) grinding the pre-sintered powder again for the second time in the same grinding mode as the first grinding mode, and discharging no material after grinding. Adding polyvinyl alcohol adhesive and 0.3 percent polyacrylamide dispersant according to 2 percent of the weight of the original powder, grinding for 30 minutes, and discharging to obtain the slurry.
Examples 2 to 3
A slurry was prepared in the same manner as in example 1 except that water in grinding was replaced with a 5%, 20% ethanol aqueous solution, respectively.
Examples 4 to 6
Slurries were prepared in the same manner as in examples 1 to 3, except that after the secondary grinding, polyvinyl alcohol was not added, or 1% of polyvinyl alcohol was added, based on the weight of the polyvinyl alcohol dry powder in the slurry.
Examples 7 to 9
Slurries were prepared in the same manner as in examples 1 to 3, except that after the secondary grinding, polyvinyl alcohol was not added, or 3% of polyvinyl alcohol was added, based on the weight of the polyvinyl alcohol dry powder in the slurry.
Examples 10 to 18
Ingredients were formulated at a molar ratio of Mn: Co: Al =36.7:46.7:16.7, and then slurries were prepared in the same manner as in examples 1 to 9.
The slurries prepared in the manner described above for examples 1-18 were poured into ceramic sleeves in the appropriate amounts according to the component manufacturing procedure described above to obtain green bodies. Sintering the obtained blank in a sintering furnace at the sintering temperature of 1000-1400 ℃ for 2 +/-0.2 hours, and then manufacturing a glaze water sealing layer to obtain the high-temperature-resistant negative temperature coefficient thermistor for detection.
While the embodiments of the present invention have been described in detail with reference to the drawings, the present invention is not limited to the above embodiments, and various changes can be made without departing from the spirit of the present invention within the knowledge of those skilled in the art.
Claims (8)
1. A method for manufacturing a high temperature resistant negative temperature coefficient thermistor is characterized by comprising the following steps: 1) preparing chip slurry: weighing metal oxide in proportion, grinding to required fineness, and preparing into slurry with water content of 30-50%; 2) preparing a pre-sintering body: arranging the leads in a group of two leads according to a required interval, filling chip slurry into the high-temperature ceramic sleeve and inserting the arranged leads, or arranging the leads in the high-temperature ceramic sleeve in advance and then filling the chip slurry, wherein the leads are inserted into the slurry by a required depth; 3) and (3) sintering: the prepared pre-sintering body is sent into a sintering furnace to be sintered at the high temperature of 1400 ℃ of 1000-one, so as to obtain a blank body; 4) preparing a glaze water sealing layer: immersing the sintered blank body into high-temperature-resistant glaze water to enable the high-temperature ceramic sleeve and the chip ceramic material to be integrally sealed, and then sintering at the temperature of 600-900 ℃ to form a glaze water sealing layer to obtain the high-temperature-resistant negative temperature coefficient thermistor, wherein the high-temperature-resistant glaze water comprises 15% of potassium feldspar, 16% of albite, 14% of talc, 9% of calcite, 12.5% of kaolin, 21% of quartz, 2% of borax, 2.5% of barium carbonate and 8% of zinc oxide, and the raw materials are ball-milled and then added with appropriate amount of water to prepare slurry to obtain the high-temperature-resistant glaze water.
2. The method of claim 1, wherein the chip slurry is formed by grinding a mixture of a metal oxide and a grinding fluid in a mill, wherein the ratio of the metal oxide to the grinding fluid is 1: 0.7-1.0.
3. The method of claim 2, wherein the polishing solution is water or an aqueous solution of 5-20% ethanol.
4. The method of claim 2, wherein the slurry obtained after the primary grinding is dried, and then the slurry is ground again to a desired fineness.
5. The method of manufacturing a high temperature resistant ntc thermistor according to claim 4, further comprising: and pre-burning the powder obtained after drying in a pre-burning furnace before secondary grinding after drying, and then carrying out secondary grinding.
6. The method of claim 5, wherein the pre-sintering temperature is 850 ℃ ± 15 ℃ and the pre-sintering time is 2 ± 0.2 hours.
7. The method of manufacturing a high temperature resistant ntc thermistor according to claim 2 or 4, further comprising: before discharging, adding the adhesive and the dispersing agent, and discharging after grinding again.
8. The method of claim 1, wherein the lead is a platinum lead.
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| CN102627458A (en) * | 2012-05-04 | 2012-08-08 | 中国科学院新疆理化技术研究所 | Wide-warm-area negative temperature coefficient thermistor material |
| CN204010867U (en) * | 2014-07-28 | 2014-12-10 | 肇庆爱晟电子科技有限公司 | A kind of high temperature resistant moistureproof NTC themistor |
| CN109053158A (en) * | 2018-08-28 | 2018-12-21 | 深圳市汇北川电子技术有限公司 | Thermal sensitive ceramic powder, NTC heat sensitive chip, temperature sensor and preparation method |
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| CN102627458A (en) * | 2012-05-04 | 2012-08-08 | 中国科学院新疆理化技术研究所 | Wide-warm-area negative temperature coefficient thermistor material |
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| CN109053158A (en) * | 2018-08-28 | 2018-12-21 | 深圳市汇北川电子技术有限公司 | Thermal sensitive ceramic powder, NTC heat sensitive chip, temperature sensor and preparation method |
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