CN110927989B - Eimei antioxidant anti-infrared band pattern lens and preparation method thereof - Google Patents

Eimei antioxidant anti-infrared band pattern lens and preparation method thereof Download PDF

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CN110927989B
CN110927989B CN201911306974.1A CN201911306974A CN110927989B CN 110927989 B CN110927989 B CN 110927989B CN 201911306974 A CN201911306974 A CN 201911306974A CN 110927989 B CN110927989 B CN 110927989B
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film layer
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CN110927989A (en
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杨敏男
吴富章
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Xiamen Mellan Optoelectronics Technology Co ltd
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Xiamen Mellan Optoelectronics Technology Co ltd
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    • G02—OPTICS
    • G02C—SPECTACLES; SUNGLASSES OR GOGGLES INSOFAR AS THEY HAVE THE SAME FEATURES AS SPECTACLES; CONTACT LENSES
    • G02C7/00—Optical parts
    • G02C7/10—Filters, e.g. for facilitating adaptation of the eyes to the dark; Sunglasses
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
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    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/18—Coatings for keeping optical surfaces clean, e.g. hydrophobic or photo-catalytic films
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/28—Interference filters
    • G02B5/281—Interference filters designed for the infrared light
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Abstract

The invention relates to an Ammi antioxidant anti-infrared band pattern lens, which comprises a substrate and a film layer arranged on the outer surface of the substrate, wherein the film layer comprises a priming layer, a pattern anti-oxidation layer and an anti-infrared light layer which are sequentially stacked from inside to outside, wherein: the bottom layer is composed of low-refractive-index thin film layers and high-refractive-index thin film layers in an alternating mode, the pattern oxidation-resistant layer is composed of patterns and a fourth oxidation-resistant thin film layer, and the infrared-resistant light layer is composed of high-refractive-index thin film layers and low-refractive-index thin film layers in an alternating mode. The anti-oxidation and anti-infrared light band pattern lens has good anti-oxidation and anti-infrared light effects, the pattern and the lens are tightly combined, the sight of a wearer is not affected, the manufacturing process controllability is strong, the operation is simple, and the market prospect is good.

Description

Eimei antioxidant anti-infrared band pattern lens and preparation method thereof
Technical Field
The invention relates to a preparation technology of a functional lens, in particular to an Eimei antioxidant anti-infrared band pattern lens and a preparation method thereof.
Background
The infrared ray is one of a plurality of invisible rays in the solar ray, which is discovered by England scientist Henschel in 1800 years and is also called infrared heat radiation, the wavelength of the infrared ray on the solar spectrum is larger than that of the visible ray, and the wavelength is 0.75-1000 μm. The infrared ray can be divided into three parts, namely near infrared ray, and the wavelength is between (0.75-1) and (2.5-3) mu m; middle infrared ray with wavelength of 2.5-3-25-40 μm; far infrared rays having a wavelength of (25-40) to l000 μm. The infrared ray has stronger ability to penetrate through the cloud than the visible ray. The method has wide application in communication, detection, medical treatment, military and other aspects. Commonly known as infrared light.
The infrared ray can be made artificially, and widely exists in nature, and the infrared ray is widely applied, so the problem of infrared ray pollution is also generated, and the problem is firstly directed at the injury of eyes.
The damage of infrared rays to eyes has different conditions, and the infrared rays with the wavelength of 7500-13000 angstrom have higher transmittance to the cornea of the eyes, which can cause the damage of the retina of the eye fundus. Especially, the infrared ray near 11000 angstrom can lead the anterior medium (corneal lens, etc.) of the eye not to be damaged and directly cause the burn of the retina of the eyeground. Infrared rays having a wavelength of 19000 angstrom or more are almost completely absorbed by the cornea, and cause corneal burn (cloudiness, leukoplakia). The energy of infrared rays with a wavelength of more than 14000 angstroms is mostly absorbed by cornea and intraocular fluid and cannot penetrate iris. Only infrared rays below 13000 angstroms can penetrate through the iris, and the iris is damaged. The human eye may cause cataracts if exposed to infrared light for a long period of time. Therefore, designing a lens resistant to infrared light has a positive significance.
Disclosure of Invention
The invention aims to solve the problems that the combination of a pattern layer and a film layer of the existing lens can interfere the sight, the pattern layer is easy to oxidize, and the color of the pattern layer can only be selected to be the same as the ground color of a substrate, so that the pattern is single.
The invention also provides a preparation method of the Hermite antioxidant anti-infrared band pattern lens, which comprises the steps of pretreatment of the substrate, vacuum coating on the inner surface of the substrate, coating of a protective layer and the like.
The specific scheme is as follows:
the utility model provides an anti infrared light band pattern lens of anti oxidation of amesdia, anti infrared light band pattern lens of amesdia includes the substrate and sets up the rete on substrate surface, the rete includes bottom layer, pattern oxidation resisting layer and the anti infrared photosphere that stacks gradually from inside to outside, wherein: the bottom layer is composed of low-refractive-index thin film layers and high-refractive-index thin film layers alternately, wherein the low-refractive-index thin film layers are adjacent to the pattern anti-oxidation layer; the pattern anti-oxidation layer consists of a pattern and a fourth oxidation resistant film layer, wherein the fourth oxidation resistant film layer is adjacent to the infrared-resistant layer; the infrared resistant layer is composed of high-refractive-index film layers and low-refractive-index film layers alternately.
Further, the film layer covers the outer surface of the substrate.
Further, the substrate is any one of an acrylic substrate, a polycarbonate substrate, a nylon substrate, a CR-39 substrate or a glass substrate.
Further, the high refractive index layer is made of ZrO2、Ti3O5Or Ta2O5Any one of the above;
optionally, the low refractive index layer is SiO2Silicon-aluminum mixture or MgF2Any one of the above;
optionally, the pattern in the patterned anti-oxidation layer is any one of an ink printing pattern, a copper template attaching pattern or an electrostatic attaching pattern;
optionally, the oxidation-resistant film layer in the patterned oxidation-resistant layer is one or a combination of selenium and nickel.
Further, the priming layer consists of a first low-refractive-index thin film layer, a second high-refractive-index thin film layer and a third low-refractive-index thin film layer, wherein the first low-refractive-index thin film layer is adjacent to the substrate, and the third low-refractive-index thin film layer is adjacent to the pattern antioxidation layer;
optionally, the infrared light resistant layer is composed of a fifth high refractive index thin film layer, a sixth low refractive index thin film layer, a seventh high refractive index thin film layer, an eighth low refractive index thin film layer, a ninth high refractive index thin film layer, a tenth low refractive index layer, an eleventh high refractive index layer and a twelfth low refractive index layer which are sequentially stacked, wherein the fifth high refractive index thin film layer is adjacent to the pattern antioxidation layer.
Further, the thickness of the first low-refractive-index thin film layer in the bottom layer is 50-150 angstroms, the thickness of the second high-refractive-index thin film layer is 100-300 angstroms, and the thickness of the third low-refractive-index thin film layer is 50-150 angstroms; the thickness of the fourth oxidation resistant thin film layer in the pattern oxidation resistant layer is 100-400 angstroms; the thicknesses of the fifth high-refractive-index thin film layer, the sixth low-refractive-index thin film layer, the seventh high-refractive-index thin film layer, the eighth low-refractive-index thin film layer, the ninth high-refractive-index thin film layer, the tenth low-refractive-index thin film layer, the eleventh high-refractive-index thin film layer and the twelfth low-refractive-index thin film layer in the infrared-resistant layer are 200-152 angstrom, 1000-charge 1300 angstrom, 650-charge 950 angstrom, 1000-charge 1300 angstrom, 500-charge 900 angstrom, 1000-charge 1400 angstrom, 550-charge 950 angstrom and 300-charge 950 angstrom in sequence.
Further, the thickness of a first low-refractive-index thin film layer in the priming layer is 100 angstroms, the thickness of a second high-refractive-index thin film layer is 200 angstroms, and the thickness of a third low-refractive-index thin film layer is 100 angstroms; the thickness of the fourth thin film layer in the patterned anti-oxidation layer is 300 angstroms; the thicknesses of a fifth high-refractive-index thin film layer, a sixth low-refractive-index thin film layer, a seventh high-refractive-index thin film layer, an eighth low-refractive-index thin film layer, a ninth high-refractive-index thin film layer, a tenth low-refractive-index thin film layer, an eleventh high-refractive-index thin film layer and a twelfth low-refractive-index thin film layer in the infrared-resistant layer are 350 angstroms m, 1150 angstroms m, 850 angstroms, 1150 angstroms, 800 angstroms, 1200 angstroms, 750 angstroms and 600 angstroms in sequence.
Furthermore, the anti-oxidation anti-infrared light band pattern lens in the Hermite further comprises a protective layer, wherein the protective layer covers the surface of one side, far away from the substrate, of the anti-infrared light layer, and is a waterproof layer, and the thickness of the protective layer is 50-500 Hermite.
The invention also provides a preparation method of the emmer antioxidant anti-infrared band pattern lens, which comprises the following steps:
(1) cleaning and drying the substrate, wherein the baking temperature is 40-65 ℃ and the baking time is 1-2 hours;
(2) sequentially carrying out vacuum coating of a bottom layer on the outer surface of the substrate;
A. placing the dried substrate on a jig, and sending the substrate into a vacuum chamber for vacuumizing;
B. when the vacuum degree of the vacuum chamber reaches less than or equal to 5 x 10-5Starting an ion source during Torr, and cleaning the surface of the substrate;
C. plating a priming layer on the outer surface of the substrate
When the vacuum degree of the vacuum chamber reaches less than or equal to 2.0 x 10-5When the temperature of the vacuum chamber is controlled to be 40-60 ℃, an electron gun is adopted to bombard the material of the first low-refractive-index thin film layer, the material is evaporated and then deposited on the outer surface of the substrate in a mode of angstrom-scale molecules, and meanwhile, the evaporation rate of the first low-refractive-index thin film layer is controlled to be
Figure BDA0002323432310000041
The thickness of the first low-refractive-index thin film layer after final formation is 50-150 angstroms;
maintaining vacuum chamber vacuum degree less than or equal to 2.0 x 10-5Keeping the temperature of the vacuum chamber at 40-60 deg.C while Torr, bombarding the film material of the second high refractive index layer with electron gun, evaporating the material, depositing the evaporated material on the outer surface of the substrate in the form of Hermitian molecules, and controlling the evaporation rate of the second high refractive index layer to be
Figure BDA0002323432310000042
The thickness of the second high refractive index layer after final formation is 100-300 angstrom;
maintaining vacuum chamber vacuum degree less than or equal to 2.0 x 10-5Keeping the temperature of the vacuum chamber at 40-60 ℃ during Torr, bombarding the film material of the third low-refractive-index layer by using an electron gun, depositing the evaporated material on the outer surface of the substrate in the form of Hermitian molecules, and controlling the evaporation rate of the third low-refractive-index layer to be at the same time
Figure BDA0002323432310000051
The thickness of the third low refractive index layer after final formation is 50 to 150 angstroms;
(3) after the bottom coating is finished, flushing the vacuum chamber into the atmosphere, then taking out the substrate, and then printing or attaching a coating pattern on the bottom coating of the substrate;
(4) arranging the substrates on a jig, putting the substrates into a vacuum chamber for vacuumizing, and coating a fourth oxidation-resistant thin film layer;
when the vacuum degree of the vacuum chamber reaches less than or equal to 2.0 x 10-5Controlling the temperature of the vacuum chamber at 40-60 deg.C, bombarding the fourth oxidation-resistant film layer material with an electron gun, evaporating the material, depositing the material on the outer surface of the substrate in the form of Hermitian molecules, and controlling the evaporation rate of the fourth oxidation-resistant film layer to be
Figure BDA0002323432310000052
The thickness of the fourth oxidation resistant film layer after final formation is 100-400 angstrom;
(5) after the film coating is finished, flushing the vacuum chamber into the atmosphere, then taking out the substrate, and then removing ink or copper templates or removing static pastes on the substrate;
(6) cleaning and drying the substrate, wherein the baking temperature is 40-60 ℃ and the baking time is 30 minutes;
(7) coating the outer surface of the substrate with an infrared-resistant layer
A. Placing the dried substrate on a jig, and sending the substrate into a vacuum chamber for vacuumizing;
B. when the vacuum degree of the vacuum chamber reaches less than or equal to 5 x 10-5Starting an ion source during Torr, and cleaning the surface of the substrate;
maintaining vacuum chamber vacuum degree less than or equal to 2.0 x 10-5Keeping the temperature of the vacuum chamber at 40-60 ℃ during Torr, bombarding a fifth high-refractive-index thin film layer material by using an electron gun, depositing the material on the outer surface of the substrate in a Hermite molecular form after evaporation, and simultaneously controlling the evaporation rate of the fifth high-refractive-index thin film layer to be
Figure BDA0002323432310000053
The thickness of the fifth high-refractive-index thin film layer after final formation is 200-500 angstrom;
maintaining vacuum chamber vacuum degree less than or equal to 2.0 x 10-5Keeping the temperature of the vacuum chamber at 40-60 ℃ while Torr, and bombarding by using an electron gunThe sixth low-refractive-index thin film layer is a material, the sixth low-refractive-index thin film layer is evaporated and then is deposited on the outer surface of the substrate in an angstrom-scale molecular form, and meanwhile, the evaporation rate of the sixth low-refractive-index thin film layer is controlled to be
Figure BDA0002323432310000061
The thickness of the sixth low-refractive-index thin film layer after final formation is 1000-1300 angstroms;
maintaining vacuum chamber vacuum degree less than or equal to 2.0 x 10-5Keeping the temperature of the vacuum chamber at 40-60 ℃ during Torr, bombarding a seventh high-refractive-index thin film layer material by using an electron gun, evaporating the seventh high-refractive-index thin film layer material, depositing the seventh high-refractive-index thin film layer material on the outer surface of the substrate in a Hermite molecular form, and controlling the evaporation rate of the seventh high-refractive-index thin film layer to be
Figure BDA0002323432310000062
The thickness of the seventh high refractive index thin film layer after final formation is 650-950 angstrom;
maintaining vacuum chamber vacuum degree less than or equal to 2.0 x 10-5Keeping the temperature of the vacuum chamber at 40-60 ℃ during Torr, bombarding the material of the eighth low-refractive-index thin film layer by using an electron gun, depositing the eighth low-refractive-index thin film layer on the outer surface of the substrate in a Hermitian molecular form after evaporation, and simultaneously controlling the evaporation rate of the eighth low-refractive-index thin film layer to be
Figure BDA0002323432310000063
The thickness of the eighth low-refractive-index thin film layer after final formation is 1000-1300 angstroms;
maintaining vacuum chamber vacuum degree less than or equal to 2.0 x 10-5Keeping the temperature of the vacuum chamber at 40-60 ℃ during Torr, bombarding the ninth high-refractive-index thin film layer material by using an electron gun, depositing the ninth high-refractive-index thin film layer material on the outer surface of the substrate in a Hermite molecular form after evaporating, and controlling the evaporation rate of the ninth high-refractive-index thin film layer material to be
Figure BDA0002323432310000064
Ninth high refractive index thin film layerThe thickness of the finally formed material is 500-900 angstrom;
maintaining vacuum chamber vacuum degree less than or equal to 2.0 x 10-5Keeping the temperature of the vacuum chamber at 40-60 ℃ during Torr, bombarding the material of the film layer with the tenth low refractive index by adopting an electron gun, depositing the film layer with the tenth low refractive index on the outer surface of the substrate in a Hermitian molecular form after evaporating, and simultaneously controlling the evaporation rate of the film layer with the tenth low refractive index to be
Figure BDA0002323432310000065
The thickness of the tenth low-refractive-index thin film layer after final formation is 1000-1400 angstrom;
maintaining vacuum chamber vacuum degree less than or equal to 2.0 x 10-5Keeping the temperature of the vacuum chamber at 40-60 ℃ during Torr, bombarding an eleventh high-refractive-index thin film layer material by using an electron gun, evaporating the eleventh high-refractive-index thin film layer material, depositing the eleventh high-refractive-index thin film layer material on the outer surface of the substrate in a Hermite molecular form, and controlling the evaporation rate of the eleventh high-refractive-index thin film layer to be equal to
Figure BDA0002323432310000071
The thickness of the eleventh high-refractive-index thin film layer after final formation is 550-950 angstrom;
maintaining vacuum chamber vacuum degree less than or equal to 2.0 x 10-5Keeping the temperature of the vacuum chamber at 40-60 ℃ during Torr, bombarding the material of the twelfth low-refractive-index thin film layer by using an electron gun, depositing the twelfth low-refractive-index thin film layer on the outer surface of the substrate in a Hermitian molecular form after evaporation, and simultaneously controlling the evaporation rate of the twelfth low-refractive-index thin film layer to be
Figure BDA0002323432310000072
The thickness of the twelfth low-refractive-index thin film layer after final formation is 300-950 angstrom meters, and the infrared-resistant layer is formed.
Further, the method comprises the step (8) of plating a protective layer on the inner surface of the substrate after the preparation of the infrared-resistant thin film layer is completed: maintaining vacuum chamber vacuum degree less than or equal to 2.0 x 10-5While keeping the temperature at TorrThe temperature of the vacuum chamber is 40-60 ℃, a tungsten boat is adopted to heat the film material waterproof material of the thirteenth film layer, the thirteenth film layer is evaporated and then deposited on the outer surface of the substrate in the form of angstrom-level molecules, and meanwhile, the evaporation rate of the thirteenth film layer is controlled to be
Figure BDA0002323432310000073
The thirteenth thin film layer is formed to a thickness of 50-500 angstroms to form a protective layer.
Has the advantages that:
the Eimei antioxidant and infrared resistant band pattern lens has good antioxidant and infrared resistant effects, and in the aspect of infrared resistance, the lowest reflectivity of the optical wavelength at 750-1100nm is more than 30%, and the average reflectivity is more than 60%.
Moreover, the problem of interference of sight lines between the film layer and the pattern layer is well solved, and meanwhile, the surface color and the pattern color of the lens are different, so that the fashion characteristic of the lens is fully reflected.
Drawings
In order to illustrate the technical solution of the present invention more clearly, the drawings will be briefly described below, and it is apparent that the drawings in the following description relate only to some embodiments of the present invention and are not intended to limit the present invention.
FIG. 1 is a chart of the reflectance spectrum of a lens according to one embodiment of the present invention.
Detailed Description
The definitions of some of the terms used in the present invention are given below, and other non-mentioned terms have definitions and meanings known in the art:
substrate: the lens is any one of an acrylic substrate, a polycarbonate substrate, a nylon substrate, a CR-39 substrate or a glass substrate, and can be a plane lens or a lens with a certain radian.
Outer surface: the outer surface of the invention refers to the side of the lens which directly receives the light of the light source in the use state, namely the side surface of the lens far away from human eyes.
Figure BDA0002323432310000081
And Hermitian/sec, which is used for characterizing the growth speed of the particle deposition forming film.
In the emm oxidation and infrared resistant patterned lens provided by the invention, the thickness of the substrate is 0.5-5.5mm, preferably 1-4mm, such as 2mm, such as 3mm, such as 3.5 mm.
In the Eimei antioxidant anti-infrared band pattern lens provided by the invention, the low refractive index film layer is made of SiO2Silicon-aluminum mixture or MgF2Any one of them. Wherein the silicon-aluminum mixture can be SiO2With Al2O3Mixtures of (A) with (B), e.g. Al2O32-6% of the total weight of the silicon-aluminum mixture, and more preferably Al2O3Accounting for 3-3.5% of the total weight of the silicon-aluminum mixture. The material can be made by self or can adopt a commercial product, such as a vacuum coating material L5, the common name of China is ' silicon-aluminum mixture ', the general name of L5 ' is the common name of Germany, the material can be provided by Merck optical company, Nanyang happy Ruite New optical material company Limited or Suzhou Prin vacuum technology company Limited, and the common specification is 1-3mm of particles and white.
The high refractive index layer is made of ZrO2、Ti3O5Or Ta2O5Preferably Ti3O5, and the oxidation resistant thin film layer in the patterned oxidation resistant layer is selenium, nickel or a combination of two, preferably a combination of selenium and nickel, such as: the thickness of the selenium film layer is 100-400 angstrom, the thickness of the nickel film layer is 100-400 angstrom, such as 100 angstrom and 300 angstrom; for example, the thickness of the selenium film layer is 200 angstrom, and the thickness of the nickel film layer is 200 angstrom; for example, the selenium film layer has a thickness of 300 angstroms and the nickel film layer has a thickness of 100 angstroms.
In the emm antioxidant anti-infrared band pattern lens provided by the invention, the priming layer is composed of a low refractive index thin film layer and a high refractive index thin film layer alternately, preferably, the priming layer is composed of a first low refractive index thin film layer, a second high refractive index thin film layer and a third low refractive index thin film layer, wherein the first low refractive index thin film layer is adjacent to the substrate, and the third low refractive index thin film layer is adjacent to the pattern anti-oxidation layer.
Specifically, the thickness of the first low-refractive-index thin film layer in the priming layer is 50-150 angstroms, the thickness of the second high-refractive-index thin film layer is 100-300 angstroms, and the thickness of the third low-refractive-index thin film layer is 50-150 angstroms, preferably, the thickness of the first low-refractive-index thin film layer in the priming layer is 70-140 angstroms, the thickness of the second high-refractive-index thin film layer is 150-250 angstroms, and the thickness of the third low-refractive-index thin film layer is 70-140 angstroms, for example, the thickness of the first low-refractive-index thin film layer in the priming layer is 100 angstroms, the thickness of the second high-refractive-index thin film layer is 200 angstroms, and the thickness of the third low-refractive-index thin film layer is 100 angstroms.
In the Eimei antioxidant and infrared band resistant pattern lens provided by the invention, the pattern in the pattern oxidation resistant layer is any one of a printing ink printing pattern, a copper template attaching pattern or an electrostatic attaching pattern. When the pattern is manufactured, the pattern is printed or attached on the bottom layer, and the bonding force between the pattern and the film layer is enhanced by the bottom layer. After the mimeograph or the laminating pattern, carry out fourth anti-oxidation thin layer coating film, later get rid of printing ink or get rid of the copper template or get rid of the static subsides, utilize the contrast effect between blank region and the coating film region to form the pattern shape, reach special visual effect, promptly: the appearance of the pattern can not be experienced almost when the wearer observes, the visual integrity of the lens is guaranteed, the clear pattern can be seen by bystanders, and the aesthetic feeling and the fashion effect of the lens are improved.
The fourth oxidation resistant film layer in the pattern oxidation resistant layer is one or two combinations of selenium and nickel (namely, the selenium film layer and the nickel film layer are mutually laminated), the layer plays an oxidation resistant role, the action mechanism of the layer is to fully play the selenium oxidation resistant performance, and the nickel has the performance characteristics of good corrosion resistance, good ductility, good hardness and the like. The thickness of the fourth oxidation resistant thin film layer is 100-400 angstroms, preferably 150-350 angstroms, more preferably 200-320 angstroms, such as 220 angstroms, such as 250 angstroms, such as 300 angstroms.
In the Eimei antioxidant anti-infrared band pattern lens provided by the invention, the anti-infrared light layer is composed of high-refractive-index film layers and low-refractive-index film layers alternately. Preferably, the infrared light resistant layer is composed of a fifth high refractive index thin film layer, a sixth low refractive index thin film layer, a seventh high refractive index thin film layer, an eighth low refractive index thin film layer, a ninth high refractive index thin film layer, a tenth low refractive index layer, an eleventh high refractive index layer and a twelfth low refractive index layer which are sequentially stacked, wherein the fifth high refractive index thin film layer is adjacent to the pattern anti-oxidation layer, and a good infrared light resistant effect can be achieved through the stacked design. Specifically, the thicknesses of the layers are 200-500-, 1000-1300-, 650-950-, 1000-1300-, 500-900-, 1000-1400-, 550-950-, 300-950-, preferably 300-400-, 1100-1200-, 750-900-, 1100-1200-, 700-900-, 1100-1300-, 650-850-, 500-800-, more preferably 300-, 1100-, 750-, 1100-, 700-, 1100-, 650-, 500-850-, 500-800-, more preferably 300-, 650-, 750-, 1100-, 700-, 1100-, 650-and 500-angstrom in sequence; e.g., 350, 1150, 800, 1200, 700, 600; such as 400, 1200, 900, 1300, 850, 800 angstroms.
The anti-oxidation anti-infrared band pattern lens provided by the invention can further comprise a protective layer made of a waterproof material, wherein the thickness of the protective layer is 50-500 angstroms, preferably 100-400 angstroms, such as 120 angstroms, such as 150 angstroms, such as 200 angstroms.
Preferred embodiments of the present invention will be described in more detail below. While the following describes preferred embodiments of the present invention, it should be understood that the present invention may be embodied in various forms and should not be limited by the embodiments set forth herein. The examples do not specify particular techniques or conditions, and are performed according to the techniques or conditions described in the literature in the art or according to the product specifications. The reagents or instruments used are not indicated by the manufacturer, and are all conventional products commercially available. In the following examples, "%" means weight percent, unless otherwise specified.
The test methods used below included:
and (3) reflectivity testing: the 400-1100nm reflectance was tested using a spectrophotometer.
And (3) antioxidant test: using QUV tester, UV irradiation: strength 0.67W/m2Irradiating for 4 hours at the temperature of 60 ℃; condensation: the temperature was 50 ℃ for 4H. The UV irradiation and condensation cycle test recorded the time at which the film color began to fade.
The following main reagents were used:
silicon-aluminum mixture, commercially available product, vacuum coating material L5 supplied by merck optical company; nichrome, a commercially available product, is supplied by parylene wire, inc.
Waterproof materials, commercially available products, are available from Kodak coating materials, Inc., Danyang.
Example 1
An Eimei antioxidant anti-infrared band pattern lens comprises a substrate and a film layer, wherein the film layer is positioned on the outer surface of the substrate. The rete begins outwards to extend by the one side that is close to the substrate, including the prime coat, pattern oxidation resisting layer and the anti infrared photosphere that stack gradually, wherein: the bottom layer consists of a first low-refractive-index thin film layer, a second high-refractive-index thin film layer and a third low-refractive-index thin film layer, wherein the first low-refractive-index thin film layer is adjacent to the substrate, and the third low-refractive-index thin film layer is adjacent to the pattern anti-oxidation layer; the pattern anti-oxidation layer consists of a pattern and a fourth oxidation resistant film layer, wherein the fourth oxidation resistant film layer is adjacent to the infrared-resistant layer; the infrared-resistant layer is composed of a fifth high-refractive-index thin film layer, a sixth low-refractive-index thin film layer, a seventh high-refractive-index thin film layer, an eighth low-refractive-index thin film layer, a ninth high-refractive-index thin film layer, a tenth low-refractive-index layer, an eleventh high-refractive-index layer and a twelfth low-refractive-index layer which are sequentially stacked, wherein the fifth high-refractive-index thin film layer is adjacent to the pattern oxidation-resistant layer. And the thirteenth waterproof protective layer is positioned on the outermost layer and is close to the twelfth low-refractive-index layer.
Specifically, the first low-refractive-index thin film layer is a silicon-aluminum mixture layer with the thickness of 80 angstrom, and the second high-refractive-index thin film layer is Ti3O5The layer, thickness is 250 angstroms meters, and the third low refracting index layer is silicon-aluminum mixture layer, and thickness is 80 angstroms meters, and fourth anti-oxidant thin layer is the selenium layer, and thickness is 200 angstroms meters, and the fifth high refracting index thin layer is Ti3O5A layer with a thickness of 300 angstrom m, a sixth low refractive index thin film layer of a silicon-aluminum mixture layer with a thickness of 1100 angstrom m, and a seventh high refractive index thin film layer of Ti3O5A layer with thickness of 750 angstroms, an eighth low refractive index thin film layer of Si-Al mixture layer with thickness of 1100 angstroms, and a ninth high refractive index thin film layer of Ti3O5A layer 700 ANGSTROM, a tenth low refractive index layer of Si-Al mixture 1100 ANGSTROM, and an eleventh high refractive index layer of Ti3O5The layer, thickness is 650 angstroms meters, and the twelfth low refracting index layer is silicon-aluminum mixture layer, and thickness is 500 angstroms meters, and the thirteenth waterproof layer, thickness are 200 angstroms meters.
Example 2
An Eimei antioxidant anti-infrared band pattern lens comprises a substrate and a film layer, wherein the film layer is positioned on the outer surface of the substrate. The rete begins outwards to extend by the one side that is close to the substrate, including the prime coat that stacks gradually, pattern oxidation resisting layer and anti infrared photosphere, wherein: the bottom layer consists of a first low-refractive-index thin film layer, a second high-refractive-index thin film layer and a third low-refractive-index thin film layer, wherein the first low-refractive-index thin film layer is adjacent to the substrate, and the third low-refractive-index thin film layer is adjacent to the pattern anti-oxidation layer; the pattern anti-oxidation layer consists of a pattern and a fourth oxidation resistant film layer, wherein the fourth oxidation resistant film layer is adjacent to the infrared-resistant layer; the infrared-resistant layer is composed of a fifth high-refractive-index thin film layer, a sixth low-refractive-index thin film layer, a seventh high-refractive-index thin film layer, an eighth low-refractive-index thin film layer, a ninth high-refractive-index thin film layer, a tenth low-refractive-index layer, an eleventh high-refractive-index layer and a twelfth low-refractive-index layer which are sequentially stacked, wherein the fifth high-refractive-index thin film layer is adjacent to the pattern oxidation-resistant layer. And the thirteenth waterproof protective layer is positioned on the outermost layer and is close to the twelfth low-refractive-index layer.
Specifically, the first low-refractive-index thin film layer is SiO2A layer of 100 angstroms thick and a second high refractive index thin film layer of Ti3O5Layer thickness of 200 angstroms and a third low refractive index layer of SiO2The thickness of the layer is 100 angstroms, the fourth oxidation resistant thin film layer is a mixed layer of selenium and nickel, the thickness of selenium is 100 angstroms and the thickness of nickel is 300 angstroms, and the fifth high refractive index thin film layer is Ti3O5A layer with a thickness of 350 angstroms and a sixth low-refractive-index thin film layer of SiO2A layer with a thickness of 1150 angstrom meters and a seventh high refractive index thin film layer of Ti3O5A layer with a thickness of 800 angstrom m and an eighth low-refractive-index thin film layer of SiO2A layer with a thickness of 1150 angstrom meters and a ninth high refractive index thin film layer of Ti3O5Layer with thickness of 800 angstrom m and a tenth low refractive index layer of SiO2A layer having a thickness of 1200 angstroms and an eleventh high refractive index layer of Ti3O5Layer 700 angstroms thick and the twelfth low refractive index layer is SiO2A layer with a thickness of 600 angstrom meters and a thirteenth waterproof protective layer with a thickness of 300 angstrom meters.
Example 3
An Eimei antioxidant anti-infrared band pattern lens comprises a substrate and a film layer, wherein the film layer is positioned on the outer surface of the substrate. The rete begins outwards to extend by the one side that is close to the substrate, including the prime coat that stacks gradually, pattern oxidation resisting layer and anti infrared photosphere, wherein: the bottom layer consists of a first low-refractive-index thin film layer, a second high-refractive-index thin film layer and a third low-refractive-index thin film layer, wherein the first low-refractive-index thin film layer is adjacent to the substrate, and the third low-refractive-index thin film layer is adjacent to the pattern anti-oxidation layer; the pattern anti-oxidation layer consists of a pattern and a fourth oxidation resistant film layer, wherein the fourth oxidation resistant film layer is adjacent to the infrared-resistant layer; the infrared-resistant layer is composed of a fifth high-refractive-index thin film layer, a sixth low-refractive-index thin film layer, a seventh high-refractive-index thin film layer, an eighth low-refractive-index thin film layer, a ninth high-refractive-index thin film layer, a tenth low-refractive-index layer, an eleventh high-refractive-index layer and a twelfth low-refractive-index layer which are sequentially stacked, wherein the fifth high-refractive-index thin film layer is adjacent to the pattern oxidation-resistant layer. And the thirteenth waterproof protective layer is positioned on the outermost layer and is close to the twelfth low-refractive-index layer.
Specifically, the first low-refractive-index thin film layer is SiO2A layer of 120 angstroms thick and a second high refractive index thin film layer of Ta2O5Layer thickness of 220 angstrom, third low refractive index layer of SiO2A layer with a thickness of 120 angstrom, a fourth oxidation resistant thin film layer of nickel with a thickness of 300 angstrom, and a fifth high refractive index thin film layer of Ta2O5A layer of 380 angstroms thick and a sixth low refractive index film layer of SiO2A layer of 1180 angstroms thick and a seventh high index of refraction film layer of Ta2O5A layer with a thickness of 850 angstroms and an eighth low-refractive-index thin film layer of SiO2A layer of 1200 angstroms thick and a ninth high index of refraction film layer of Ta2O5Layer 850 angstrom thick and the tenth low refractive index layer of SiO2Layer 1280 angstroms thick, and the eleventh high refractive index layer is Ta2O5A layer with a thickness of 790 angstroms and a twelfth low refractive index layer of SiO2A layer 700 angstroms thick, a thirteenth water-resistant protective layer 350 angstroms thick.
Example 4
An Eimei antioxidant anti-infrared band pattern lens comprises a substrate and a film layer, wherein the film layer is positioned on the outer surface of the substrate. The rete begins outwards to extend by the one side that is close to the substrate, including the prime coat that stacks gradually, pattern oxidation resisting layer and anti infrared photosphere, wherein: the bottom layer consists of a first low-refractive-index thin film layer, a second high-refractive-index thin film layer and a third low-refractive-index thin film layer, wherein the first low-refractive-index thin film layer is adjacent to the substrate, and the third low-refractive-index thin film layer is adjacent to the pattern anti-oxidation layer; the pattern anti-oxidation layer consists of a pattern and a fourth oxidation resistant film layer, wherein the fourth oxidation resistant film layer is adjacent to the infrared-resistant layer; the infrared-resistant layer is composed of a fifth high-refractive-index thin film layer, a sixth low-refractive-index thin film layer, a seventh high-refractive-index thin film layer, an eighth low-refractive-index thin film layer, a ninth high-refractive-index thin film layer, a tenth low-refractive-index layer, an eleventh high-refractive-index layer and a twelfth low-refractive-index layer which are sequentially stacked, wherein the fifth high-refractive-index thin film layer is adjacent to the pattern oxidation-resistant layer. And the thirteenth waterproof protective layer is positioned on the outermost layer and is close to the twelfth low-refractive-index layer.
Specifically, the first low-refractive-index thin film layer is SiO2A layer of 90 angstrom thick and a second high refractive index film layer of ZrO2Layer thickness of 200 angstroms and a third low refractive index layer of SiO2The thickness of the layer is 90 angstrom meters, the fourth oxidation resistant thin film layer is a selenium layer, the thickness of the layer is 400 angstrom meters, and the fifth high refractive index thin film layer is ZrO2A layer with a thickness of 400 angstroms and a sixth low refractive index film layer of SiO2A layer with a thickness of 1200 angstrom m and a seventh high refractive index film layer of ZrO2A layer of 880 Angstrom thick and an eighth low refractive index film layer of SiO2A layer of 1180 angstroms thick and a ninth high index of refraction film layer of ZrO2Layer 780 Angstrom thick, the tenth low refractive index layer being SiO2A layer of 1230 Angstrom thickness and an eleventh high refractive index layer of ZrO2Layer with thickness of 800 angstrom and the twelfth low refractive index layer of SiO2A layer 750 angstroms thick, a thirteenth water-resistant protective layer 280 angstroms thick.
Example 5
An Eimei antioxidant anti-infrared band pattern lens comprises a substrate and a film layer, wherein the film layer is positioned on the outer surface of the substrate. The rete begins outwards to extend by the one side that is close to the substrate, including the prime coat that stacks gradually, pattern oxidation resisting layer and anti infrared photosphere, wherein: the bottom layer consists of a first low-refractive-index thin film layer, a second high-refractive-index thin film layer and a third low-refractive-index thin film layer, wherein the first low-refractive-index thin film layer is adjacent to the substrate, and the third low-refractive-index thin film layer is adjacent to the pattern anti-oxidation layer; the pattern anti-oxidation layer consists of a pattern and a fourth oxidation resistant film layer, wherein the fourth oxidation resistant film layer is adjacent to the infrared-resistant layer; the infrared-resistant layer is composed of a fifth high-refractive-index thin film layer, a sixth low-refractive-index thin film layer, a seventh high-refractive-index thin film layer, an eighth low-refractive-index thin film layer, a ninth high-refractive-index thin film layer, a tenth low-refractive-index layer, an eleventh high-refractive-index layer and a twelfth low-refractive-index layer which are sequentially stacked, wherein the fifth high-refractive-index thin film layer is adjacent to the pattern oxidation-resistant layer. And the thirteenth waterproof protective layer is positioned on the outermost layer and is close to the twelfth low-refractive-index layer.
Specifically, the first low-refractive-index thin film layer is SiO2A layer of 130 angstroms thick and a second high refractive index thin film layer of ZrO2Layer thickness of 180 angstroms and a third low refractive index layer of SiO2The thickness of the layer is 130 angstroms, the fourth oxidation resistant thin film layer is a mixed layer of selenium and nickel, the selenium thickness is 200 angstroms, the nickel thickness is 200 angstroms, and the fifth high refractive index thin film layer is ZrO2A layer with a thickness of 450 angstroms and a sixth low-refractive-index thin film layer of SiO2A layer of 1250 angstroms thick and a seventh high refractive index film layer of ZrO2Layer with thickness of 900 angstrom and eighth low refractive index film layer of SiO2A layer of 1250 angstroms thick and a ninth high refractive index film layer of ZrO2Layer 850 angstrom thick and the tenth low refractive index layer of SiO2A layer of 1330 Angstrom m in thickness and an eleventh high refractive index layer of ZrO2A layer with a thickness of 880 Angstrom and a twelfth low refractive index layer of SiO2A layer with a thickness of 850 angstrom meters and a thirteenth waterproof protective layer with a thickness of 450 angstrom meters.
Example 6
The method for preparing the antioxidant anti-infrared band pattern lens comprises the following steps:
(1) cleaning and drying the substrate, wherein the baking temperature is 40-65 ℃ and the baking time is 1-2 hours;
(2) sequentially carrying out vacuum coating of a bottom layer on the outer surface of the substrate;
A. placing the dried substrate on a jig, and sending the substrate into a vacuum chamber for vacuumizing;
B. when the vacuum degree of the vacuum chamber reaches less than or equal to 5 x 10-5Starting an ion source during Torr, and cleaning the surface of the substrate;
C. plating a priming layer on the outer surface of the substrate
When the vacuum degree of the vacuum chamber reaches less than or equal to 2.0 x 10-5When the temperature of the vacuum chamber is controlled to be 40-60 ℃, an electron gun is adopted to bombard the material of the first low-refractive-index thin film layer, the material is evaporated and then deposited on the outer surface of the substrate in a mode of angstrom-scale molecules, and meanwhile, the evaporation rate of the first low-refractive-index thin film layer is controlled to be
Figure BDA0002323432310000161
The thickness of the first low-refractive-index thin film layer after final formation is 50-150 angstroms;
maintaining vacuum chamber vacuum degree less than or equal to 2.0 x 10-5Keeping the temperature of the vacuum chamber at 40-60 deg.C while Torr, bombarding the film material of the second high refractive index layer with electron gun, evaporating the material, depositing the evaporated material on the outer surface of the substrate in the form of Hermitian molecules, and controlling the evaporation rate of the second high refractive index layer to be
Figure BDA0002323432310000171
The thickness of the second high refractive index layer after final formation is 100-300 angstrom;
maintaining vacuum chamber vacuum degree less than or equal to 2.0 x 10-5Keeping the temperature of the vacuum chamber at 40-60 ℃ during Torr, bombarding the film material of the third low-refractive-index layer by using an electron gun, depositing the evaporated material on the outer surface of the substrate in the form of Hermitian molecules, and controlling the evaporation rate of the third low-refractive-index layer to be at the same time
Figure BDA0002323432310000172
The thickness of the third low refractive index layer after final formation is 50 to 150 angstroms;
(3) after the bottom coating is finished, flushing the vacuum chamber into the atmosphere, then taking out the substrate, and then printing or attaching a coating pattern on the bottom coating of the substrate;
(4) arranging the substrates on a jig, putting the substrates into a vacuum chamber for vacuumizing, and coating a fourth oxidation-resistant thin film layer;
when the vacuum degree of the vacuum chamber reaches less than or equal to 2.0 x 10-5Controlling the temperature of the vacuum chamber at 40-60 deg.C while Torr, bombarding the fourth oxidation-resistant thin film layer material with electron gun, evaporating the material, and forming into Hermitian molecularDepositing on the outer surface of the substrate while controlling the evaporation rate of the fourth oxidation-resistant film layer to
Figure BDA0002323432310000173
The thickness of the fourth oxidation resistant film layer after final formation is 100-400 angstrom;
(5) after the film coating is finished, flushing the vacuum chamber into the atmosphere, then taking out the substrate, and then removing ink or copper templates or removing static pastes on the substrate;
(6) cleaning and drying the substrate, wherein the baking temperature is 40-60 ℃ and the baking time is 30 minutes;
(7) coating the outer surface of the substrate with an infrared-resistant layer
A. Placing the dried substrate on a jig, and sending the substrate into a vacuum chamber for vacuumizing;
B. when the vacuum degree of the vacuum chamber reaches less than or equal to 5 x 10-5Starting an ion source during Torr, and cleaning the surface of the substrate;
maintaining vacuum chamber vacuum degree less than or equal to 2.0 x 10-5Keeping the temperature of the vacuum chamber at 40-60 ℃ during Torr, bombarding a fifth high-refractive-index thin film layer material by using an electron gun, depositing the material on the outer surface of the substrate in a Hermite molecular form after evaporation, and simultaneously controlling the evaporation rate of the fifth high-refractive-index thin film layer to be
Figure BDA0002323432310000181
The thickness of the fifth high-refractive-index thin film layer after final formation is 200-500 angstrom;
maintaining vacuum chamber vacuum degree less than or equal to 2.0 x 10-5Keeping the temperature of the vacuum chamber at 40-60 ℃ during Torr, bombarding the material of the sixth low-refractive-index thin film layer by using an electron gun, depositing the sixth low-refractive-index thin film layer on the outer surface of the substrate in a Hermitian molecular form after evaporation, and simultaneously controlling the evaporation rate of the sixth low-refractive-index thin film layer to be
Figure BDA0002323432310000185
The thickness of the sixth low-refractive-index thin film layer after final formation is 1000-1300 angstroms;
maintaining vacuum chamber vacuum degree less than or equal to 2.0 x 10-5Keeping the temperature of the vacuum chamber at 40-60 ℃ during Torr, bombarding a seventh high-refractive-index thin film layer material by using an electron gun, evaporating the seventh high-refractive-index thin film layer material, depositing the seventh high-refractive-index thin film layer material on the outer surface of the substrate in a Hermite molecular form, and controlling the evaporation rate of the seventh high-refractive-index thin film layer to be
Figure BDA0002323432310000182
The thickness of the seventh high refractive index thin film layer after final formation is 650-950 angstrom;
maintaining vacuum chamber vacuum degree less than or equal to 2.0 x 10-5Keeping the temperature of the vacuum chamber at 40-60 ℃ during Torr, bombarding the material of the eighth low-refractive-index thin film layer by using an electron gun, depositing the eighth low-refractive-index thin film layer on the outer surface of the substrate in a Hermitian molecular form after evaporation, and simultaneously controlling the evaporation rate of the eighth low-refractive-index thin film layer to be
Figure BDA0002323432310000183
The thickness of the eighth low-refractive-index thin film layer after final formation is 1000-1300 angstroms;
maintaining vacuum chamber vacuum degree less than or equal to 2.0 x 10-5Keeping the temperature of the vacuum chamber at 40-60 ℃ during Torr, bombarding the ninth high-refractive-index thin film layer material by using an electron gun, depositing the ninth high-refractive-index thin film layer material on the outer surface of the substrate in a Hermite molecular form after evaporating, and controlling the evaporation rate of the ninth high-refractive-index thin film layer material to be
Figure BDA0002323432310000184
The thickness of the ninth high refractive index thin film layer material after final formation is 500-900 angstrom;
maintaining vacuum chamber vacuum degree less than or equal to 2.0 x 10-5Keeping the temperature of the vacuum chamber at 40-60 ℃ during Torr, bombarding the material of the tenth low-refractive-index thin film layer by using an electron gun, depositing the tenth low-refractive-index thin film layer on the outer surface of the substrate in a Hermitian molecular form after evaporation, and controlling the tenth low-refractive-index thin film layerThe film layer evaporation rate is
Figure BDA0002323432310000191
The thickness of the tenth low-refractive-index thin film layer after final formation is 1000-1400 angstrom;
maintaining vacuum chamber vacuum degree less than or equal to 2.0 x 10-5Keeping the temperature of the vacuum chamber at 40-60 ℃ during Torr, bombarding an eleventh high-refractive-index thin film layer material by using an electron gun, evaporating the eleventh high-refractive-index thin film layer material, depositing the eleventh high-refractive-index thin film layer material on the outer surface of the substrate in a Hermite molecular form, and controlling the evaporation rate of the eleventh high-refractive-index thin film layer to be equal to
Figure BDA0002323432310000192
The thickness of the eleventh high-refractive-index thin film layer after final formation is 550-950 angstrom;
maintaining vacuum chamber vacuum degree less than or equal to 2.0 x 10-5Keeping the temperature of the vacuum chamber at 40-60 ℃ during Torr, bombarding the material of the twelfth low-refractive-index thin film layer by using an electron gun, depositing the twelfth low-refractive-index thin film layer on the outer surface of the substrate in a Hermitian molecular form after evaporation, and simultaneously controlling the evaporation rate of the twelfth low-refractive-index thin film layer to be
Figure BDA0002323432310000193
The thickness of the twelfth low-refractive-index thin film layer after final formation is 300-950 angstrom meters, and the infrared-resistant layer is formed.
(8) After the preparation of the infrared light resistant film layer is finished, the inner surface of the substrate is plated with a protective layer: maintaining vacuum chamber vacuum degree less than or equal to 2.0 x 10-5When the temperature of the vacuum chamber is kept at 40-60 ℃ during Torr, a tungsten boat is adopted to heat the film material waterproof material of the thirteenth film layer, the thirteenth film layer is evaporated and then deposited on the outer surface of the substrate in a micron-level molecular form, and the evaporation rate of the thirteenth film layer is controlled to be 40-60 DEG C
Figure BDA0002323432310000194
The thickness of the thirteenth film layer after final formation is 50-300 angstroms to form a protective filmAnd (4) a protective layer.
Comparative example 1
The common Eimei anti-infrared lens comprises a substrate and a film layer, wherein the film layer is positioned on the outer surface of the substrate. The film layer begins to extend outwards by the side close to the substrate, and is composed of a first low-refractive-index film layer, a second high-refractive-index film layer and a third low-refractive-index film layer in sequence, and a fourth high-refractive-index film layer, a fifth low-refractive-index film layer, a sixth high-refractive-index film layer, a seventh low-refractive-index film layer, an eighth high-refractive-index film layer, a ninth low-refractive-index layer and a tenth waterproof protective layer.
Specifically, the first low-refractive-index thin film layer is a silicon-aluminum mixture layer with the thickness of 80 angstroms, and the second high-refractive-index thin film layer is Ti3O5A layer with a thickness of 300 angstrom m, a third low refractive index layer of a silicon-aluminum mixture layer with a thickness of 1100 angstrom m, and a fourth high refractive index thin film layer of Ti3O5A layer with a thickness of 750 angstroms, a fifth low refractive index thin film layer of Si-Al mixture with a thickness of 1100 angstroms, and a sixth high refractive index thin film layer of Ti3O5The layer with the thickness of 700 angstroms, the seventh low-refractive-index thin film layer is a silicon-aluminum mixture layer with the thickness of 1100 angstroms, and the eighth high-refractive-index thin film layer is Ti3O5The layer, thickness is 650 angstroms meters, and the ninth low refracting index layer is silicon-aluminum mixture layer, and thickness is 500 angstroms meters, and tenth waterproof layer, thickness are 200 angstroms meters.
Performance detection
The lenses in the embodiment 1 and the comparative example 1 are tested, and the reflectivity of the lens in the embodiment 1 to the wavelength of 380-.
The average reflectivity and the saline soak resistance time of the lenses of example 1 and comparative example 1 are shown in table 1.
TABLE 1 Performance test Table
Item Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Comparative example 1
Average reflectance/%) 65 71 68 68 69 67 58
Oxidation resistance QUV test/h 190 200 194 188 201 196 90
As can be seen from Table 1, the lens prepared by the method has an average reflectivity of more than 65% at the wavelength of 750-1100nm, and has a remarkable anti-infrared effect; in a QUV test, the film can resist the color fading of an oxidation resistance test film for about 190h and has good oxidation resistance.
The preferred embodiments of the present invention have been described in detail, however, the present invention is not limited to the specific details of the above embodiments, and various simple modifications may be made to the technical solution of the present invention within the technical idea of the present invention, and these simple modifications are within the protective scope of the present invention.
It should be noted that the various features described in the above embodiments may be combined in any suitable manner without departing from the scope of the invention. The invention is not described in detail in order to avoid unnecessary repetition.
In addition, any combination of the various embodiments of the present invention is also possible, and the same should be considered as the disclosure of the present invention as long as it does not depart from the spirit of the present invention.

Claims (8)

1. An anti-oxidation anti-infrared band pattern lens of amesdia which is characterized in that: the anti-oxidation anti-infrared light band pattern lens of the angstrom includes the substrate and sets up the rete on substrate surface, the rete includes base coat, pattern oxidation resisting layer and the anti infrared photosphere that stacks gradually from inside to outside, wherein: the bottom layer is composed of low-refractive-index thin film layers and high-refractive-index thin film layers alternately, wherein the low-refractive-index thin film layers are adjacent to the pattern anti-oxidation layer; the pattern oxidation resistant layer consists of a pattern and a fourth oxidation resistant film layer, wherein the fourth oxidation resistant film layer is adjacent to the infrared resistant layer, and the fourth oxidation resistant film layer in the pattern oxidation resistant layer is nickel; the infrared-resistant layer consists of high-refractive-index thin film layers and low-refractive-index thin film layers alternately; the high-refractive-index layer is made of Ti3O5Or Ta2O5Wherein the low refractive index layer is a silicon-aluminum mixture or MgF2In (1)The method is as follows; the bottom layer consists of a first low-refractive-index thin film layer, a second high-refractive-index thin film layer and a third low-refractive-index thin film layer, wherein the first low-refractive-index thin film layer is adjacent to the substrate, and the third low-refractive-index thin film layer is adjacent to the pattern anti-oxidation layer; the infrared-resistant layer consists of a fifth high-refractive-index thin film layer, a sixth low-refractive-index thin film layer, a seventh high-refractive-index thin film layer, an eighth low-refractive-index thin film layer, a ninth high-refractive-index thin film layer, a tenth low-refractive-index layer, an eleventh high-refractive-index layer and a twelfth low-refractive-index layer which are sequentially stacked, wherein the fifth high-refractive-index thin film layer is adjacent to the pattern anti-oxidation layer, the thickness of the first low-refractive-index thin film layer in the priming layer is 50-150 angstroms, the thickness of the second high-refractive-index thin film layer is 100-300 angstroms, and the thickness of the third low-refractive-index thin film layer is 50-150 angstroms; the thickness of the fourth oxidation resistant thin film layer in the pattern oxidation resistant layer is 100-400 angstroms; the thicknesses of a fifth high-refractive-index thin film layer, a sixth low-refractive-index thin film layer, a seventh high-refractive-index thin film layer, an eighth low-refractive-index thin film layer, a ninth high-refractive-index thin film layer, a tenth low-refractive-index thin film layer, an eleventh high-refractive-index thin film layer and a twelfth low-refractive-index thin film layer in the infrared-resistant layer are 200-500 angstroms, 1000-1300 angstroms, 650-950 angstroms, 1000-1300 angstroms, 500-900 angstroms, 1000-1400 angstroms, 550-950 angstroms and 300-950 angstroms in sequence; the minimum reflectivity of the Eimei antioxidant infrared-resistant band pattern lens to the optical wavelength of 750-1100nm is more than 30%, and the average reflectivity is more than 60%.
2. The emm antioxidant anti-infrared band patterned lens of claim 1, wherein: the film layer covers the outer surface of the substrate.
3. The emm antioxidant anti-infrared band patterned lens of claim 1, wherein: the substrate is any one of an acrylic substrate, a polycarbonate substrate, a nylon substrate, a CR-39 substrate or a glass substrate.
4. The emm antioxidant anti-infrared band patterned lens of claim 1, wherein: the pattern in the pattern oxidation resisting layer is any one of an ink printing pattern, a copper template attaching pattern or an electrostatic attaching pattern.
5. The emm antioxidant anti-infrared band patterned lens of claim 1, wherein: the thickness of a first low-refractive-index thin film layer in the bottom layer is 100 angstroms, the thickness of a second high-refractive-index thin film layer is 200 angstroms, and the thickness of a third low-refractive-index thin film layer is 100 angstroms; the thickness of the fourth thin film layer in the patterned anti-oxidation layer is 300 angstroms; the thicknesses of a fifth high-refractive-index thin film layer, a sixth low-refractive-index thin film layer, a seventh high-refractive-index thin film layer, an eighth low-refractive-index thin film layer, a ninth high-refractive-index thin film layer, a tenth low-refractive-index thin film layer, an eleventh high-refractive-index thin film layer and a twelfth low-refractive-index thin film layer in the infrared-resistant layer are 350 angstroms m, 1150 angstroms m, 850 angstroms, 1150 angstroms, 800 angstroms, 1200 angstroms, 750 angstroms and 600 angstroms in sequence.
6. The Am antioxidant anti-infrared band patterned lens of any of claims 1-4, wherein: the protective layer covers the surface of one side, far away from the substrate, of the infrared-resistant layer, and is a waterproof layer, and the thickness of the protective layer is 50-500 angstroms.
7. A method of making an emm antioxidant anti-ir band patterned lens of any of claims 1-6, comprising: the method comprises the following steps:
(1) cleaning and drying the substrate, wherein the baking temperature is 40-65 ℃ and the baking time is 1-2 hours;
(2) sequentially carrying out vacuum coating of a bottom layer on the outer surface of the substrate;
A. placing the dried substrate on a jig, and sending the substrate into a vacuum chamber for vacuumizing;
B. when the vacuum degree of the vacuum chamber reaches less than or equal to 5 x 10-5Starting an ion source during Torr, and cleaning the surface of the substrate;
C. plating a priming layer on the outer surface of the substrate
When the vacuum degree of the vacuum chamber reaches less than or equal to 2.0 x 10-5When the temperature of the vacuum chamber is controlled to be 40-60 ℃, an electron gun is adopted to bombard the material of the first low-refractive-index thin film layer, the material is evaporated and then deposited on the outer surface of the substrate in a mode of angstrom-scale molecules, and meanwhile, the evaporation rate of the first low-refractive-index thin film layer is controlled to be
Figure FDF0000012573390000032
The thickness of the first low-refractive-index thin film layer after final formation is 50-150 angstroms;
maintaining vacuum chamber vacuum degree less than or equal to 2.0 x 10-5Keeping the temperature of the vacuum chamber at 40-60 deg.C while Torr, bombarding the film material of the second high refractive index layer with electron gun, evaporating the material, depositing the evaporated material on the outer surface of the substrate in the form of Hermitian molecules, and controlling the evaporation rate of the second high refractive index layer to be
Figure FDF0000012573390000033
The thickness of the second high refractive index layer after final formation is 100-300 angstrom;
maintaining vacuum chamber vacuum degree less than or equal to 2.0 x 10-5Keeping the temperature of the vacuum chamber at 40-60 ℃ during Torr, bombarding the film material of the third low-refractive-index layer by using an electron gun, depositing the evaporated material on the outer surface of the substrate in the form of Hermitian molecules, and controlling the evaporation rate of the third low-refractive-index layer to be at the same time
Figure FDF0000012573390000034
The thickness of the third low refractive index layer after final formation is 50 to 150 angstroms;
(3) after the bottom coating is finished, flushing the vacuum chamber into the atmosphere, then taking out the substrate, and then printing or attaching a coating pattern on the bottom coating of the substrate;
(4) arranging the substrates on a jig, putting the substrates into a vacuum chamber for vacuumizing, and coating a fourth oxidation-resistant thin film layer;
when the vacuum degree of the vacuum chamber reaches less thanOr equal to 2.0 x 10-5Controlling the temperature of the vacuum chamber at 40-60 deg.C, bombarding the fourth oxidation-resistant film layer material with an electron gun, evaporating the material, depositing the material on the outer surface of the substrate in the form of Hermitian molecules, and controlling the evaporation rate of the fourth oxidation-resistant film layer to be
Figure FDF0000012573390000031
The thickness of the fourth oxidation resistant film layer after final formation is 100-400 angstrom;
(5) after the film coating is finished, flushing the vacuum chamber into the atmosphere, then taking out the substrate, and then removing ink or copper templates or removing static pastes on the substrate;
(6) cleaning and drying the substrate, wherein the baking temperature is 40-60 ℃ and the baking time is 30 minutes;
(7) coating the outer surface of the substrate with an infrared-resistant layer
A. Placing the dried substrate on a jig, and sending the substrate into a vacuum chamber for vacuumizing;
B. when the vacuum degree of the vacuum chamber reaches less than or equal to 5 x 10-5Starting an ion source during Torr, and cleaning the surface of the substrate;
maintaining vacuum chamber vacuum degree less than or equal to 2.0 x 10-5Keeping the temperature of the vacuum chamber at 40-60 ℃ during Torr, bombarding a fifth high-refractive-index thin film layer material by using an electron gun, depositing the material on the outer surface of the substrate in a Hermite molecular form after evaporation, and simultaneously controlling the evaporation rate of the fifth high-refractive-index thin film layer to be
Figure FDF0000012573390000043
The thickness of the fifth high-refractive-index thin film layer after final formation is 200-500 angstrom;
maintaining vacuum chamber vacuum degree less than or equal to 2.0 x 10-5Keeping the temperature of the vacuum chamber at 40-60 ℃ during Torr, bombarding the material of the sixth low-refractive-index thin film layer by using an electron gun, depositing the sixth low-refractive-index thin film layer on the outer surface of the substrate in a Hermitian molecular form after evaporation, and simultaneously controlling the evaporation rate of the sixth low-refractive-index thin film layer to be
Figure FDF0000012573390000041
The thickness of the sixth low-refractive-index thin film layer after final formation is 1000-1300 angstroms;
maintaining vacuum chamber vacuum degree less than or equal to 2.0 x 10-5Keeping the temperature of the vacuum chamber at 40-60 ℃ during Torr, bombarding a seventh high-refractive-index thin film layer material by using an electron gun, evaporating the seventh high-refractive-index thin film layer material, depositing the seventh high-refractive-index thin film layer material on the outer surface of the substrate in a Hermite molecular form, and controlling the evaporation rate of the seventh high-refractive-index thin film layer to be
Figure FDF0000012573390000042
The thickness of the seventh high refractive index thin film layer after final formation is 650-950 angstrom;
maintaining vacuum chamber vacuum degree less than or equal to 2.0 x 10-5Keeping the temperature of the vacuum chamber at 40-60 ℃ during Torr, bombarding the material of the eighth low-refractive-index thin film layer by using an electron gun, depositing the eighth low-refractive-index thin film layer on the outer surface of the substrate in a Hermitian molecular form after evaporation, and simultaneously controlling the evaporation rate of the eighth low-refractive-index thin film layer to be
Figure FDF0000012573390000051
The thickness of the eighth low-refractive-index thin film layer after final formation is 1000-1300 angstroms;
maintaining vacuum chamber vacuum degree less than or equal to 2.0 x 10-5Keeping the temperature of the vacuum chamber at 40-60 ℃ during Torr, bombarding the ninth high-refractive-index thin film layer material by using an electron gun, depositing the ninth high-refractive-index thin film layer material on the outer surface of the substrate in a Hermite molecular form after evaporating, and controlling the evaporation rate of the ninth high-refractive-index thin film layer material to be
Figure FDF0000012573390000052
The thickness of the ninth high refractive index thin film layer material after final formation is 500-900 angstrom;
maintaining vacuum chamber vacuum degree less than or equal to 2.0 x 10-5When the temperature is kept at the temperature of Torr,simultaneously keeping the temperature of the vacuum chamber at 40-60 ℃, bombarding the material of the film layer with the tenth low refractive index by adopting an electron gun, depositing the film layer with the tenth low refractive index on the outer surface of the substrate in a Hermitian molecular form after evaporating, and simultaneously controlling the evaporation rate of the film layer with the tenth low refractive index to be
Figure FDF0000012573390000055
The thickness of the tenth low-refractive-index thin film layer after final formation is 1000-1400 angstrom;
maintaining vacuum chamber vacuum degree less than or equal to 2.0 x 10-5Keeping the temperature of the vacuum chamber at 40-60 ℃ during Torr, bombarding an eleventh high-refractive-index thin film layer material by using an electron gun, evaporating the eleventh high-refractive-index thin film layer material, depositing the eleventh high-refractive-index thin film layer material on the outer surface of the substrate in a Hermite molecular form, and controlling the evaporation rate of the eleventh high-refractive-index thin film layer to be equal to
Figure FDF0000012573390000053
The thickness of the eleventh high-refractive-index thin film layer after final formation is 550-950 angstrom;
maintaining vacuum chamber vacuum degree less than or equal to 2.0 x 10-5Keeping the temperature of the vacuum chamber at 40-60 ℃ during Torr, bombarding the material of the twelfth low-refractive-index thin film layer by using an electron gun, depositing the twelfth low-refractive-index thin film layer on the outer surface of the substrate in a Hermitian molecular form after evaporation, and simultaneously controlling the evaporation rate of the twelfth low-refractive-index thin film layer to be
Figure FDF0000012573390000054
The thickness of the twelfth low-refractive-index thin film layer after final formation is 300-950 angstrom meters, and the infrared-resistant layer is formed.
8. The method of making an emm antioxidant anti-infrared band patterned lens of claim 7, wherein: and (8) after the preparation of the infrared light resistant film layer is finished, plating a protective layer on the inner surface of the substrate: maintaining vacuum chamber vacuum degree less than or equal to 2.0 x 10-5When the temperature is kept at the temperature of Torr,simultaneously keeping the temperature of the vacuum chamber at 40-60 deg.C, heating the film material waterproof material of the thirteenth film layer with a tungsten boat, evaporating the thirteenth film layer, depositing the evaporated thirteenth film layer on the outer surface of the substrate in the form of Hermitian molecules, and controlling the evaporation rate of the thirteenth film layer to be
Figure FDF0000012573390000061
The thirteenth thin film layer is formed to a thickness of 50-500 angstroms to form a protective layer.
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