CN110880858A - Drive circuit of switching power supply, half-bridge topology switching power supply and electronic equipment - Google Patents

Drive circuit of switching power supply, half-bridge topology switching power supply and electronic equipment Download PDF

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Publication number
CN110880858A
CN110880858A CN201811034212.6A CN201811034212A CN110880858A CN 110880858 A CN110880858 A CN 110880858A CN 201811034212 A CN201811034212 A CN 201811034212A CN 110880858 A CN110880858 A CN 110880858A
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circuit
resistor
field effect
effect transistor
drive circuit
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Chinese (zh)
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钟延煌
蔡智勇
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Shenzhen Yinghe Technology Co Ltd
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Shenzhen Yinghe Technology Co Ltd
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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/08Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices

Abstract

The application belongs to the technical field of switching power supplies, and relates to a driving circuit of a switching power supply, a half-bridge topology switching power supply and electronic equipment. The drive circuit of the switching power supply includes: a processor, an upper arm drive circuit and a lower arm drive circuit; the processor respectively sends pulse width modulation signals to the upper arm driving circuit and the lower arm driving circuit; the upper arm drive circuit includes: the circuit comprises a potential conversion circuit, a totem-pole discharge circuit, a half-push-pull type drive circuit and a field effect transistor grid discharge circuit; the processor sends a pulse width modulation signal to the potential conversion circuit; the potential conversion circuit is electrically connected with the totem-pole discharge circuit; the totem-pole discharge circuit is electrically connected with the half-push-pull type drive circuit; the half push-pull type driving circuit is electrically connected with the field effect transistor grid electrode discharging circuit; the potential conversion circuit is used for amplifying the voltage value of the pulse width modulation signal. The driving circuit of the switching power supply is concise in wiring.

Description

Drive circuit of switching power supply, half-bridge topology switching power supply and electronic equipment
Technical Field
The application belongs to the technical field of switching power supplies, and relates to a driving circuit of a switching power supply, a half-bridge topology switching power supply and electronic equipment.
Background
At present, the driving technologies of a main switching field effect transistor of a half-bridge topology switching power supply include optical coupling driving, non-isolation bootstrap driving and single transformer driving. The three driving modes respectively have the defects that the optical coupler driving needs two paths of isolation power supplies to supply power to the upper arm driving circuit IC and the lower arm driving circuit IC respectively, so that the auxiliary power supply and the whole wiring difficulty are increased, the output end of the existing driving optical coupler lags about 500ns compared with the signal input end, and the half-bridge topology switching power supply with the switching frequency higher than 100KHZ has a great technical defect, so that the driving scheme cannot be selected. The non-isolated bootstrap drive is a special IC scheme, such as IR2101, and a plurality of models can be selected, but the voltage difference of the upper arm and the lower arm is below 600V, which cannot meet the service condition of a half-bridge topology switching power supply with three-phase power input. The single transformer scheme has the disadvantage that the driving waveforms of the upper and lower arm driving circuits are from the same transformer, so that the driving waveforms interfere with each other, and the main switch field effect transistor is burnt in serious cases.
The inventor finds that in the process of researching the application, a driving circuit of a switching power supply in the prior art is difficult in wiring, or a signal output end lags behind a signal input end by about 500ns, or the use condition of a half-bridge topology switching power supply with three-phase power input cannot be met, or the driving waveforms of an upper arm driving circuit and a lower arm driving circuit interfere with each other because of coming out of the same transformer.
Disclosure of Invention
The embodiment of the application discloses a driving circuit of a switching power supply, a half-bridge topology switching power supply and electronic equipment, and aims to solve the problems in the prior art mentioned in the background art.
One or more embodiments of the present application disclose a driving circuit of a switching power supply. The drive circuit of the switching power supply includes: a processor, an upper arm drive circuit and a lower arm drive circuit; the processor respectively sends pulse width modulation signals to the upper arm driving circuit and the lower arm driving circuit; the upper arm drive circuit includes: the circuit comprises a potential conversion circuit, a totem-pole discharge circuit, a half-push-pull type drive circuit and a field effect transistor grid discharge circuit; the processor sends a pulse width modulation signal to the potential conversion circuit; the potential conversion circuit is electrically connected with the totem-pole discharge circuit; the totem-pole discharge circuit is electrically connected with the half-push-pull type drive circuit; the half push-pull type driving circuit is electrically connected with the field effect transistor grid electrode discharging circuit; the potential conversion circuit is used for amplifying the voltage value of the pulse width modulation signal; the totem-pole discharge circuit is used for amplifying the current value of the pulse width modulation signal; the half push-pull type driving circuit is used for outputting positive voltage in a conducting state; the field effect tube grid electrode discharge circuit is used for discharging to the field effect tube grid electrode; the lower arm drive circuit is configured the same as the upper arm drive circuit.
In one or more embodiments of the present application, the potential conversion circuit includes: the circuit comprises a comparator U1A, a resistor R1, a resistor R2, a resistor R3 and a capacitor C1; a pulse width modulation signal sent by the processor is input to a non-inverting input end of the comparator U1A; one end of the resistor R1 is connected with a power supply, and the other end of the resistor R1 is connected with one end of the resistor R2; the other end of the resistor R2 is grounded; the capacitor C1 is connected in parallel across the resistor R2; the inverting input end of the comparator U1A is connected between the resistor R1 and the resistor R2; the output end of the comparator U1A is connected to the totem-pole discharge circuit; one end of the resistor R3 is connected with the output end of the comparator U1A, and the other end of the resistor R3 is connected with the power supply input end of the totem-pole discharge circuit.
In one or more embodiments of the present application, the totem-pole discharge circuit includes: a transistor Q1, a transistor Q2, a resistor R4 and a resistor R5; the base electrode of the triode Q1 is connected with the output end of the comparator U1A, the collector electrode of the triode Q1 is connected with the power input end of the totem pole discharge circuit, and the emitter electrode of the triode Q1 is connected with the collector electrode of the triode Q2; the base electrode of the triode Q2 is connected with the output end of the comparator U1A, and the emitter electrode of the triode Q2 is grounded; one end of the resistor R4 is connected between the emitter of the triode Q1 and the collector of the triode Q2, and the other end of the resistor R4 is connected to the half-push-pull type driving circuit; one end of the resistor R5 is grounded, and the other end of the resistor R5 is connected to the half push-pull type driving circuit.
In one or more embodiments of the present application, the half push-pull driving circuit includes: a field effect transistor M1, a transformer T1, and a diode D1; the grid electrode of the field effect transistor M1 is connected with the resistor R4 and the resistor R5, the drain electrode of the field effect transistor M1 is connected with the pin 1 of the transformer T1, and the source electrode of the field effect transistor M1 is grounded; the pin 2 of the transformer T1 is grounded, the pin 3 of the transformer T1 is connected with the cathode of the diode D1, and the pins 4 and 5 of the transformer T1 are connected with the field effect transistor grid discharge circuit; the anode of the diode D1 is grounded.
In one or more embodiments of the present application, the fet gate discharge circuit includes: the diode D2, the diode D3, the diode D4, the triode Q3, the zener diode DV1, the capacitor C2, the resistor R6, the resistor R7 and the resistor R8; the anode of the diode D2 is connected to the 4-pin of the transformer T1, and the cathode of the diode D2 is connected to the capacitor C2; the cathode of the diode D3 is connected between the pin 5 of the transformer T1 and the base of the triode Q3, and the anode of the diode D3 is connected to the source of the main switching field effect transistor; the base electrode of the triode Q3 is connected to the pin 5 of the transformer T1, the collector electrode of the triode Q3 is connected between the cathode of the diode D2 and the capacitor C2, and the emitter electrode of the triode Q3 is connected to the source electrode of the main switching field effect transistor; the voltage-stabilizing diode DV1 is connected in parallel to two ends of the capacitor C2; one end of the resistor R6 is connected between the cathode of the diode D2 and the capacitor C2, and the other end of the resistor R6 is connected with the cathode of the diode D3, the pin 5 of the transformer T1 and the base of the triode Q3; one end of the resistor R7 is connected with the capacitor C2, and the other end of the resistor R7 is connected to the grid of the main switch field effect transistor; one end of the resistor R8 is connected with the anode of the diode D4, and the other end of the resistor R8 is connected between the resistor R7 and the grid of the main switch field effect transistor; the cathode of the diode D4 is the source of the main switch field effect transistor.
One or more embodiments of the present application disclose a half-bridge topology switching power supply. The half-bridge topology switching power supply comprises a driving circuit of the switching power supply, and the driving circuit of the switching power supply comprises: a processor, an upper arm drive circuit and a lower arm drive circuit; the processor respectively sends pulse width modulation signals to the upper arm driving circuit and the lower arm driving circuit; the upper arm drive circuit includes: the circuit comprises a potential conversion circuit, a totem-pole discharge circuit, a half-push-pull type drive circuit and a field effect transistor grid discharge circuit; the processor sends a pulse width modulation signal to the potential conversion circuit; the potential conversion circuit is electrically connected with the totem-pole discharge circuit; the totem-pole discharge circuit is electrically connected with the half-push-pull type drive circuit; the half push-pull type driving circuit is electrically connected with the field effect transistor grid electrode discharging circuit; the potential conversion circuit is used for amplifying the voltage value of the pulse width modulation signal; the totem-pole discharge circuit is used for amplifying the current value of the pulse width modulation signal; the half push-pull type driving circuit is used for outputting positive voltage in a conducting state; the field effect tube grid electrode discharge circuit is used for discharging to the field effect tube grid electrode; the lower arm drive circuit is configured the same as the upper arm drive circuit.
One or more embodiments of the present application disclose an electronic device, the electronic device is provided with a half-bridge topology switching power supply, the half-bridge topology switching power supply includes a driving circuit of the switching power supply, the driving circuit of the switching power supply includes: a processor, an upper arm drive circuit and a lower arm drive circuit; the processor respectively sends pulse width modulation signals to the upper arm driving circuit and the lower arm driving circuit; the upper arm drive circuit includes: the circuit comprises a potential conversion circuit, a totem-pole discharge circuit, a half-push-pull type drive circuit and a field effect transistor grid discharge circuit; the processor sends a pulse width modulation signal to the potential conversion circuit; the potential conversion circuit is electrically connected with the totem-pole discharge circuit; the totem-pole discharge circuit is electrically connected with the half-push-pull type drive circuit; the half push-pull type driving circuit is electrically connected with the field effect transistor grid electrode discharging circuit; the potential conversion circuit is used for amplifying the voltage value of the pulse width modulation signal; the totem-pole discharge circuit is used for amplifying the current value of the pulse width modulation signal; the half push-pull type driving circuit is used for outputting positive voltage in a conducting state; the field effect tube grid electrode discharge circuit is used for discharging to the field effect tube grid electrode; the lower arm drive circuit is configured the same as the upper arm drive circuit.
Compared with the prior art, the technical scheme disclosed by the application mainly has the following beneficial effects:
in an embodiment of the present application, the pulse width modulation signal (PWM signal) sent by the processor to the upper arm drive circuit enters the potential conversion circuit. Since the supply voltage of the processor is generally 5V, the peak voltage value of the pwm signal from the processor is lower than 5V, and if the half push-pull driving circuit is directly driven by the peak voltage value, the voltage requirement of the half push-pull driving circuit cannot be met. In the embodiment of the application, the voltage value of the pulse width modulation signal is amplified by the potential conversion circuit, and the current value of the pulse width modulation signal is amplified by the totem-pole discharge circuit, so that the half-push-pull type drive circuit can reach a conducting state and output a positive voltage. And the half-push-pull type driving circuit can drive a main switching field effect transistor of the half-bridge topology switching power supply. In the embodiment of the application, the driving circuit of the switching power supply forms a double-transformer driving scheme through the upper arm driving circuit and the lower arm driving circuit, and the driving waveform of the upper arm driving circuit does not interfere with the driving waveform of the lower arm driving circuit, so that the main switching field effect transistor of the half-bridge topology switching power supply is not easily burnt out. In addition, the driving circuit of the switching power supply is simple in wiring, the signal output end and the signal input end are almost synchronous, and the using condition of the three-phase input half-bridge topology switching power supply can be met.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive labor.
Fig. 1 is a schematic diagram of a driving circuit of a switching power supply according to an embodiment of the present application;
fig. 2 is a specific configuration diagram of a driving circuit of a switching power supply according to an embodiment of the present application.
Description of reference numerals:
Figure BDA0001790473100000041
Detailed Description
To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present application are shown in the drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
At present, the driving technologies of a main switching field effect transistor of a half-bridge topology switching power supply include optical coupling driving, non-isolation bootstrap driving and single transformer driving. The three driving modes respectively have the defects that the optical coupler driving needs two paths of isolation power supplies to supply power to the upper arm driving circuit IC and the lower arm driving circuit IC respectively, so that the auxiliary power supply and the whole wiring difficulty are increased, the output end of the existing driving optical coupler lags about 500ns compared with the signal input end, and the half-bridge topology switching power supply with the switching frequency higher than 100KHZ has a great technical defect, so that the driving scheme cannot be selected. The non-isolated bootstrap drive is a special IC scheme, such as IR2101, and a plurality of models can be selected, but the voltage difference of the upper arm and the lower arm is below 600V, which cannot meet the service condition of a half-bridge topology switching power supply with three-phase power input. The single transformer scheme has the disadvantage that the driving waveforms of the upper and lower arm driving circuits are from the same transformer, so that the driving waveforms interfere with each other, and the main switch field effect transistor is burnt in serious cases.
An embodiment of the application discloses a driving circuit of a switching power supply.
Fig. 1 is a schematic diagram of a driving circuit of a switching power supply according to an embodiment of the present disclosure.
As illustrated in fig. 1, the driving circuit of the switching power supply includes: a processor 100, an upper arm drive circuit 200, and a lower arm drive circuit 300; the processor 100 sends pulse width modulation signals to the upper arm driving circuit 200 and the lower arm driving circuit 300, respectively; the upper arm drive circuit 200 includes: a potential conversion circuit 210, a totem-pole discharge circuit 220, a half-push-pull drive circuit 230 and a field effect transistor gate discharge circuit 240; the processor 100 sends a pulse width modulation signal to the potential conversion circuit 210; the potential conversion circuit 210 is electrically connected with the totem-pole discharge circuit 220; the totem-pole discharge circuit 220 is electrically connected with the half-push-pull driving circuit 230; the half-push-pull driving circuit 230 is electrically connected with the field effect transistor gate discharging circuit 240; the potential conversion circuit 210 is configured to amplify a voltage value of the pulse width modulation signal; the totem-pole discharge circuit 220 is used for amplifying the current value of the pulse width modulation signal; the half push-pull driving circuit 230 is configured to output a positive voltage in an on state; the field effect transistor grid electrode discharge circuit 240 is used for discharging to the field effect transistor grid electrode; the lower arm drive circuit 300 is constructed the same as the upper arm drive circuit 200.
In the embodiment of the present application, the pulse width modulation signal (PWM signal) sent from the processor 100 to the upper arm driving circuit 200 enters the potential conversion circuit 210. Since the supply voltage of the processor 100 is generally 5V, the peak voltage value of the pwm signal output from the processor 100 is lower than 5V, and if the half push-pull driving circuit 230 is directly driven by the peak voltage value, the voltage requirement of the half push-pull driving circuit 230 cannot be met. In the embodiment of the present application, the voltage value of the pwm signal is amplified by the potential converting circuit 210, and the current value of the pwm signal is amplified by the totem pole discharging circuit 220, so that the half push-pull driving circuit 230 can reach the on state and output a positive voltage. The half-push-pull driving circuit 230 can drive the main switching fet of the half-bridge topology switching power supply. In the embodiment of the present application, the driving circuit of the switching power supply forms a dual-transformer driving scheme through the upper arm driving circuit 200 and the lower arm driving circuit 300, and the driving waveform of the upper arm driving circuit 200 does not interfere with the driving waveform of the lower arm driving circuit 300, which is not likely to cause burning of the main switching fet of the half-bridge topology switching power supply. In addition, the driving circuit of the switching power supply is simple in wiring, the signal output end and the signal input end are almost synchronous, and the using condition of the three-phase input half-bridge topology switching power supply can be met.
Fig. 2 is a specific configuration diagram of a driving circuit of a switching power supply according to an embodiment of the present application.
As illustrated in fig. 2, the potential conversion circuit 210 includes: the circuit comprises a comparator U1A, a resistor R1, a resistor R2, a resistor R3 and a capacitor C1; the pulse width modulation signal sent by the processor 100 is input to the non-inverting input terminal of the comparator U1A; one end of the resistor R1 is connected with a power supply, and the other end of the resistor R1 is connected with one end of the resistor R2; the other end of the resistor R2 is grounded; the capacitor C1 is connected in parallel across the resistor R2; the inverting input end of the comparator U1A is connected between the resistor R1 and the resistor R2; the output end of the comparator U1A is connected to the totem-pole discharge circuit 220; one end of the resistor R3 is connected to the output end of the comparator U1A, and the other end of the resistor R3 is connected to the power input end of the totem-pole discharge circuit 220.
As illustrated in fig. 2, the totem-pole discharge circuit 220 includes: a transistor Q1, a transistor Q2, a resistor R4 and a resistor R5; the base electrode of the triode Q1 is connected with the output end of the comparator U1A, the collector electrode of the triode Q1 is connected with the power input end of the totem pole discharge circuit 220, and the emitter electrode of the triode Q1 is connected with the collector electrode of the triode Q2; the base electrode of the triode Q2 is connected with the output end of the comparator U1A, and the emitter electrode of the triode Q2 is grounded; one end of the resistor R4 is connected between the emitter of the triode Q1 and the collector of the triode Q2, and the other end of the resistor R4 is connected to the half-push-pull driving circuit 230; one end of the resistor R5 is grounded, and the other end of the resistor R5 is connected to the half push-pull driving circuit 230.
As illustrated in fig. 2, the half push-pull driving circuit 230 includes: a field effect transistor M1, a transformer T1, and a diode D1; the grid electrode of the field effect transistor M1 is connected with the resistor R4 and the resistor R5, the drain electrode of the field effect transistor M1 is connected with the pin 1 of the transformer T1, and the source electrode of the field effect transistor M1 is grounded; the 2 pin of the transformer T1 is grounded, the 3 pin of the transformer T1 is connected with the cathode of the diode D1, and the 4 pins and the 5 pins of the transformer T1 are connected with the field effect transistor grid discharge circuit 240; the anode of the diode D1 is grounded.
As illustrated in fig. 2, the fet gate discharge circuit 240 includes: the diode D2, the diode D3, the diode D4, the triode Q3, the zener diode DV1, the capacitor C2, the resistor R6, the resistor R7 and the resistor R8; the anode of the diode D2 is connected to the 4-pin of the transformer T1, and the cathode of the diode D2 is connected to the capacitor C2; the cathode of the diode D3 is connected between the pin 5 of the transformer T1 and the base of the triode Q3, and the anode of the diode D3 is connected to the source (M3-S) of the main switching field effect transistor; the base electrode of the triode Q3 is connected to the pin 5 of the transformer T1, the collector electrode of the triode Q3 is connected between the cathode of the diode D2 and the capacitor C2, and the emitter electrode of the triode Q3 is connected to the source electrode of the main switching field effect transistor; the voltage-stabilizing diode DV1 is connected in parallel to two ends of the capacitor C2; one end of the resistor R6 is connected between the cathode of the diode D2 and the capacitor C2, and the other end of the resistor R6 is connected with the cathode of the diode D3, the pin 5 of the transformer T1 and the base of the triode Q3; one end of the resistor R7 is connected with the capacitor C2, and the other end of the resistor R7 is connected to the gate (M3-G) of the main switch field effect transistor; one end of the resistor R8 is connected with the anode of the diode D4, and the other end of the resistor R8 is connected between the resistor R7 and the grid of the main switch field effect transistor; the cathode of the diode D4 is the source of the main switch field effect transistor.
The construction of the lower arm drive circuit 300 is understood with reference to the circuit scheme in fig. 2.
With continued reference to fig. 2, the resistor R1, the resistor R2 and the capacitor C1 form a resistor divider circuit, and the resistor divider circuit causes the voltage drop of the resistor R2 to be 1V to 3V.
With continued reference to FIG. 2, the comparator U1A has a current of about 10mA, and the resistor R3 has a resistance of VCC/10 mA.
With continued reference to fig. 2, the field effect transistor M1 is an N-channel field effect transistor with a current of 3A to 6A and a withstand voltage range of 50V to 100V.
With continued reference to fig. 2, the diode D2 and the diode D3 are fast recovery diodes, which may also be schottky diodes. The current of the diode D2 and the current of the diode D3 are 1A, and the withstand voltage is more than 50V.
With continued reference to fig. 2, in order for the transistor Q3 to discharge M3-G quickly, the resistance of the resistor R6 must not be too large, typically 470 Ω to 1000 Ω. With continued reference to fig. 2, the zener diode DV1 is typically selected to be 5.1V/0.5W. The capacitance C2 is between 0.1 microfarad and 1 microfarad.
With continued reference to fig. 2, the resistance R3 is typically selected to be 10 Ω to 100 Ω.
With continued reference to fig. 2, the resistor R8 and the diode D4 constitute an unbalanced charge in the switch state. In the on state, the resistor R8 and the diode D4 charge the capacitor C2. In the open state, the current loop is: 4 feet of the transformer T1 → the diode D2 → the capacitor C2, the zener diode DV1 → (M3-G, M3-S)/(resistor R8, diode D4) → diode D3 → 5 feet of the transformer T1. In the off state, the diode D4 is turned off, and the capacitor C2 stores a constant amount of electricity to form an off negative voltage. In the off state, the current loop is: M3-G → resistor R7 → capacitor C2 → resistor R6, and transistor Q3 → M3-S.
With continued reference to fig. 2, when the transformer T1 is operating in a forward state, the diode D1 assists the transformer T1 in performing a magnetic reset. The operating condition of the half-push-pull driving circuit 230 is that the maximum duty cycle of the pulse width modulation signal is 50%, and when the maximum duty cycle of the pulse width modulation signal is greater than 50%, the transformer T1 cannot complete the magnetic reset. Pulse width modulation signals of the upper arm driving circuit 200 and the lower arm driving circuit 300 of the driving circuit of the switching power supply are both less than 50%, and the condition that the transformer T1 completes magnetic reset is met.
With reference to fig. 2, the capacitor C2, the zener diode DV1, the resistor R8, and the diode D4 form a negative voltage generating circuit, which provides a negative voltage turn-off voltage for the main switching fet, thereby improving the anti-interference performance.
An embodiment of the present application discloses a half-bridge topology switching power supply.
With reference to fig. 1 and 2, the half-bridge topology switching power supply includes a driving circuit of the switching power supply, and the driving circuit of the switching power supply includes: a processor 100, an upper arm drive circuit 200, and a lower arm drive circuit 300; the processor 100 sends pulse width modulation signals to the upper arm driving circuit 200 and the lower arm driving circuit 300, respectively.
The upper arm drive circuit 200 includes: a potential conversion circuit 210, a totem-pole discharge circuit 220, a half-push-pull drive circuit 230 and a field effect transistor gate discharge circuit 240; the processor 100 sends a pulse width modulation signal to the potential conversion circuit 210; the potential conversion circuit 210 is electrically connected with the totem-pole discharge circuit 220; the totem-pole discharge circuit 220 is electrically connected with the half-push-pull driving circuit 230; the half-push-pull driving circuit 230 is electrically connected to the fet gate discharge circuit 240.
The potential conversion circuit 210 is configured to amplify a voltage value of the pulse width modulation signal; the totem-pole discharge circuit 220 is used for amplifying the current value of the pulse width modulation signal; the half push-pull driving circuit 230 is configured to output a positive voltage in an on state; the field effect transistor grid electrode discharge circuit 240 is used for discharging to the field effect transistor grid electrode; the lower arm drive circuit 300 is constructed the same as the upper arm drive circuit 200.
Further, the potential conversion circuit 210 includes: the circuit comprises a comparator U1A, a resistor R1, a resistor R2, a resistor R3 and a capacitor C1; the pulse width modulation signal sent by the processor 100 is input to the non-inverting input terminal of the comparator U1A; one end of the resistor R1 is connected with a power supply, and the other end of the resistor R1 is connected with one end of the resistor R2; the other end of the resistor R2 is grounded; the capacitor C1 is connected in parallel across the resistor R2; the inverting input end of the comparator U1A is connected between the resistor R1 and the resistor R2; the output end of the comparator U1A is connected to the totem-pole discharge circuit 220; one end of the resistor R3 is connected to the output end of the comparator U1A, and the other end of the resistor R3 is connected to the power input end of the totem-pole discharge circuit 220.
Further, the totem-pole discharge circuit 220 includes: a transistor Q1, a transistor Q2, a resistor R4 and a resistor R5; the base electrode of the triode Q1 is connected with the output end of the comparator U1A, the collector electrode of the triode Q1 is connected with the power input end of the totem pole discharge circuit 220, and the emitter electrode of the triode Q1 is connected with the collector electrode of the triode Q2; the base electrode of the triode Q2 is connected with the output end of the comparator U1A, and the emitter electrode of the triode Q2 is grounded; one end of the resistor R4 is connected between the emitter of the triode Q1 and the collector of the triode Q2, and the other end of the resistor R4 is connected to the half-push-pull driving circuit 230; one end of the resistor R5 is grounded, and the other end of the resistor R5 is connected to the half push-pull driving circuit 230.
Further, the half push-pull driving circuit 230 includes: a field effect transistor M1, a transformer T1, and a diode D1; the grid electrode of the field effect transistor M1 is connected with the resistor R4 and the resistor R5, the drain electrode of the field effect transistor M1 is connected with the pin 1 of the transformer T1, and the source electrode of the field effect transistor M1 is grounded; the 2 pin of the transformer T1 is grounded, the 3 pin of the transformer T1 is connected with the cathode of the diode D1, and the 4 pins and the 5 pins of the transformer T1 are connected with the field effect transistor grid discharge circuit 240; the anode of the diode D1 is grounded.
Further, the fet gate discharge circuit 240 includes: the diode D2, the diode D3, the diode D4, the triode Q3, the zener diode DV1, the capacitor C2, the resistor R6, the resistor R7 and the resistor R8; the anode of the diode D2 is connected to the 4-pin of the transformer T1, and the cathode of the diode D2 is connected to the capacitor C2; the cathode of the diode D3 is connected between the pin 5 of the transformer T1 and the base of the triode Q3, and the anode of the diode D3 is connected to the source (M3-S) of the main switching field effect transistor; the base electrode of the triode Q3 is connected to the pin 5 of the transformer T1, the collector electrode of the triode Q3 is connected between the cathode of the diode D2 and the capacitor C2, and the emitter electrode of the triode Q3 is connected to the source electrode of the main switching field effect transistor; the voltage-stabilizing diode DV1 is connected in parallel to two ends of the capacitor C2; one end of the resistor R6 is connected between the cathode of the diode D2 and the capacitor C2, and the other end of the resistor R6 is connected with the cathode of the diode D3, the pin 5 of the transformer T1 and the base of the triode Q3; one end of the resistor R7 is connected with the capacitor C2, and the other end of the resistor R7 is connected to the gate (M3-G) of the main switch field effect transistor; one end of the resistor R8 is connected with the anode of the diode D4, and the other end of the resistor R8 is connected between the resistor R7 and the grid of the main switch field effect transistor; the cathode of the diode D4 is the source of the main switch field effect transistor.
An embodiment of the present application discloses an electronic device.
With reference to fig. 1 and fig. 2, a half-bridge topology switching power supply is provided on the electronic device, and the half-bridge topology switching power supply includes a driving circuit of the switching power supply. The drive circuit of the switching power supply includes: a processor 100, an upper arm drive circuit 200, and a lower arm drive circuit 300; the processor 100 sends pulse width modulation signals to the upper arm driving circuit 200 and the lower arm driving circuit 300, respectively.
The upper arm drive circuit 200 includes: a potential conversion circuit 210, a totem-pole discharge circuit 220, a half-push-pull drive circuit 230 and a field effect transistor gate discharge circuit 240; the processor 100 sends a pulse width modulation signal to the potential conversion circuit 210; the potential conversion circuit 210 is electrically connected with the totem-pole discharge circuit 220; the totem-pole discharge circuit 220 is electrically connected with the half-push-pull driving circuit 230; the half-push-pull driving circuit 230 is electrically connected to the fet gate discharge circuit 240.
The potential conversion circuit 210 is configured to amplify a voltage value of the pulse width modulation signal; the totem-pole discharge circuit 220 is used for amplifying the current value of the pulse width modulation signal; the half push-pull driving circuit 230 is configured to output a positive voltage in an on state; the field effect transistor grid electrode discharge circuit 240 is used for discharging to the field effect transistor grid electrode; the lower arm drive circuit 300 is constructed the same as the upper arm drive circuit 200.
Further, the potential conversion circuit 210 includes: the circuit comprises a comparator U1A, a resistor R1, a resistor R2, a resistor R3 and a capacitor C1; the pulse width modulation signal sent by the processor 100 is input to the non-inverting input terminal of the comparator U1A; one end of the resistor R1 is connected with a power supply, and the other end of the resistor R1 is connected with one end of the resistor R2; the other end of the resistor R2 is grounded; the capacitor C1 is connected in parallel across the resistor R2; the inverting input end of the comparator U1A is connected between the resistor R1 and the resistor R2; the output end of the comparator U1A is connected to the totem-pole discharge circuit 220; one end of the resistor R3 is connected to the output end of the comparator U1A, and the other end of the resistor R3 is connected to the power input end of the totem-pole discharge circuit 220.
Further, the totem-pole discharge circuit 220 includes: a transistor Q1, a transistor Q2, a resistor R4 and a resistor R5; the base electrode of the triode Q1 is connected with the output end of the comparator U1A, the collector electrode of the triode Q1 is connected with the power input end of the totem pole discharge circuit 220, and the emitter electrode of the triode Q1 is connected with the collector electrode of the triode Q2; the base electrode of the triode Q2 is connected with the output end of the comparator U1A, and the emitter electrode of the triode Q2 is grounded; one end of the resistor R4 is connected between the emitter of the triode Q1 and the collector of the triode Q2, and the other end of the resistor R4 is connected to the half-push-pull driving circuit 230; one end of the resistor R5 is grounded, and the other end of the resistor R5 is connected to the half push-pull driving circuit 230.
Further, the half push-pull driving circuit 230 includes: a field effect transistor M1, a transformer T1, and a diode D1; the grid electrode of the field effect transistor M1 is connected with the resistor R4 and the resistor R5, the drain electrode of the field effect transistor M1 is connected with the pin 1 of the transformer T1, and the source electrode of the field effect transistor M1 is grounded; the 2 pin of the transformer T1 is grounded, the 3 pin of the transformer T1 is connected with the cathode of the diode D1, and the 4 pins and the 5 pins of the transformer T1 are connected with the field effect transistor grid discharge circuit 240; the anode of the diode D1 is grounded.
Further, the fet gate discharge circuit 240 includes: the diode D2, the diode D3, the diode D4, the triode Q3, the zener diode DV1, the capacitor C2, the resistor R6, the resistor R7 and the resistor R8; the anode of the diode D2 is connected to the 4-pin of the transformer T1, and the cathode of the diode D2 is connected to the capacitor C2; the cathode of the diode D3 is connected between the pin 5 of the transformer T1 and the base of the triode Q3, and the anode of the diode D3 is connected to the source (M3-S) of the main switching field effect transistor; the base electrode of the triode Q3 is connected to the pin 5 of the transformer T1, the collector electrode of the triode Q3 is connected between the cathode of the diode D2 and the capacitor C2, and the emitter electrode of the triode Q3 is connected to the source electrode of the main switching field effect transistor; the voltage-stabilizing diode DV1 is connected in parallel to two ends of the capacitor C2; one end of the resistor R6 is connected between the cathode of the diode D2 and the capacitor C2, and the other end of the resistor R6 is connected with the cathode of the diode D3, the pin 5 of the transformer T1 and the base of the triode Q3; one end of the resistor R7 is connected with the capacitor C2, and the other end of the resistor R7 is connected to the gate (M3-G) of the main switch field effect transistor; one end of the resistor R8 is connected with the anode of the diode D4, and the other end of the resistor R8 is connected between the resistor R7 and the grid of the main switch field effect transistor; the cathode of the diode D4 is the source of the main switch field effect transistor.
When the techniques in the various embodiments described above are implemented using software, the computer instructions and/or data to implement the various embodiments described above may be stored on a computer-readable medium or transmitted as one or more instructions or code on a readable medium. Computer-readable media includes both computer storage media and communication media including any medium that facilitates transfer of a computer program from one place to another. A storage media may be any available media that a computer can store. Taking this as an example but not limiting: computer-readable media can include RAM, ROM, EEPROM, CD-ROM or other optical disk storage, magnetic disk storage or other magnetic storage devices, or any other medium that can carry or store desired program code in the form of instructions or data structures and that can be accessed by a computer. Further, any connection is properly termed a computer-readable medium. For example, if the software is transmitted from a website, server, or other remote source using a coaxial cable, fiber optic cable, twisted pair, Digital Subscriber Line (DSL), or wireless technologies such as infrared, radio, and microwave, then the coaxial cable, fiber optic cable, twisted pair, DSL, or wireless technologies such as infrared, radio, and microwave are included in the definition of medium.
Finally, it should be noted that: the above examples are only for illustrating the technical solutions of the present application, and are not limited thereto. Although the present application has been described in detail with reference to the foregoing embodiments, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention. And such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions in the embodiments of the present application.

Claims (7)

1. A driving circuit of a switching power supply, comprising: a processor (100), an upper arm drive circuit (200), and a lower arm drive circuit (300); the processor (100) sends pulse width modulation signals to the upper arm drive circuit (200) and the lower arm drive circuit (300) respectively;
the upper arm drive circuit (200) includes: a potential conversion circuit (210), a totem-pole discharge circuit (220), a half-push-pull type drive circuit (230) and a field effect transistor grid discharge circuit (240); the processor (100) sends a pulse width modulation signal to the potential conversion circuit (210); the potential conversion circuit (210) is electrically connected with the totem-pole discharge circuit (220); the totem-pole discharge circuit (220) is electrically connected with the half-push-pull type drive circuit (230); the half-push-pull driving circuit (230) is electrically connected with the field effect transistor grid electrode discharging circuit (240);
the potential conversion circuit (210) is used for amplifying the voltage value of the pulse width modulation signal; the totem-pole discharge circuit (220) is used for amplifying the current value of the pulse width modulation signal; the half-push-pull type driving circuit (230) is used for outputting positive voltage in a conducting state; the field effect transistor grid electrode discharge circuit (240) is used for discharging to a field effect transistor grid electrode;
the lower arm drive circuit (300) is constructed the same as the upper arm drive circuit (200).
2. The driving circuit of the switching power supply according to claim 1, wherein the potential converting circuit (210) comprises: the circuit comprises a comparator U1A, a resistor R1, a resistor R2, a resistor R3 and a capacitor C1; a pulse width modulation signal sent by the processor (100) is input to a non-inverting input end of the comparator U1A; one end of the resistor R1 is connected with a power supply, and the other end of the resistor R1 is connected with one end of the resistor R2; the other end of the resistor R2 is grounded; the capacitor C1 is connected in parallel across the resistor R2; the inverting input end of the comparator U1A is connected between the resistor R1 and the resistor R2; the output end of the comparator U1A is connected to the totem-pole discharge circuit (220); one end of the resistor R3 is connected with the output end of the comparator U1A, and the other end of the resistor R3 is connected with the power supply input end of the totem-pole discharge circuit (220).
3. The driving circuit of the switching power supply according to claim 1, wherein the totem-pole discharge circuit (220) comprises: a transistor Q1, a transistor Q2, a resistor R4 and a resistor R5; the base electrode of the triode Q1 is connected with the output end of the comparator U1A, the collector electrode of the triode Q1 is connected with the power input end of the totem pole discharge circuit (220), and the emitter electrode of the triode Q1 is connected with the collector electrode of the triode Q2; the base electrode of the triode Q2 is connected with the output end of the comparator U1A, and the emitter electrode of the triode Q2 is grounded; one end of the resistor R4 is connected between the emitter of the triode Q1 and the collector of the triode Q2, and the other end of the resistor R4 is connected to the half-push-pull type driving circuit (230); one end of the resistor R5 is grounded, and the other end of the resistor R5 is connected to the half push-pull driving circuit (230).
4. A driving circuit of a switching power supply according to claim 3, characterized in that the half-push-pull driving circuit (230) comprises: a field effect transistor M1, a transformer T1, and a diode D1; the grid electrode of the field effect transistor M1 is connected with the resistor R4 and the resistor R5, the drain electrode of the field effect transistor M1 is connected with the pin 1 of the transformer T1, and the source electrode of the field effect transistor M1 is grounded; the 2 pin of the transformer T1 is grounded, the 3 pin of the transformer T1 is connected with the cathode of the diode D1, and the 4 pin and the 5 pin of the transformer T1 are connected with the field effect transistor grid discharge circuit (240); the anode of the diode D1 is grounded.
5. The driving circuit of the switching power supply according to claim 4, wherein the field effect transistor gate discharge circuit (240) comprises: the diode D2, the diode D3, the diode D4, the triode Q3, the zener diode DV1, the capacitor C2, the resistor R6, the resistor R7 and the resistor R8; the anode of the diode D2 is connected to the 4-pin of the transformer T1, and the cathode of the diode D2 is connected to the capacitor C2; the cathode of the diode D3 is connected between the pin 5 of the transformer T1 and the base of the triode Q3, and the anode of the diode D3 is connected to the source of the main switching field effect transistor; the base electrode of the triode Q3 is connected to the pin 5 of the transformer T1, the collector electrode of the triode Q3 is connected between the cathode of the diode D2 and the capacitor C2, and the emitter electrode of the triode Q3 is connected to the source electrode of the main switching field effect transistor; the voltage-stabilizing diode DV1 is connected in parallel to two ends of the capacitor C2; one end of the resistor R6 is connected between the cathode of the diode D2 and the capacitor C2, and the other end of the resistor R6 is connected with the cathode of the diode D3, the pin 5 of the transformer T1 and the base of the triode Q3; one end of the resistor R7 is connected with the capacitor C2, and the other end of the resistor R7 is connected to the grid of the main switch field effect transistor; one end of the resistor R8 is connected with the anode of the diode D4, and the other end of the resistor R8 is connected between the resistor R7 and the grid of the main switch field effect transistor; the cathode of the diode D4 is the source of the main switch field effect transistor.
6. A half-bridge topology switching power supply, comprising a driving circuit of the switching power supply, the driving circuit of the switching power supply comprising: a processor (100), an upper arm drive circuit (200), and a lower arm drive circuit (300); the processor (100) sends pulse width modulation signals to the upper arm drive circuit (200) and the lower arm drive circuit (300) respectively;
the upper arm drive circuit (200) includes: a potential conversion circuit (210), a totem-pole discharge circuit (220), a half-push-pull type drive circuit (230) and a field effect transistor grid discharge circuit (240); the processor (100) sends a pulse width modulation signal to the potential conversion circuit (210); the potential conversion circuit (210) is electrically connected with the totem-pole discharge circuit (220); the totem-pole discharge circuit (220) is electrically connected with the half-push-pull type drive circuit (230); the half-push-pull driving circuit (230) is electrically connected with the field effect transistor grid electrode discharging circuit (240);
the potential conversion circuit (210) is used for amplifying the voltage value of the pulse width modulation signal; the totem-pole discharge circuit (220) is used for amplifying the current value of the pulse width modulation signal; the half-push-pull type driving circuit (230) is used for outputting positive voltage in a conducting state; the field effect transistor grid electrode discharge circuit (240) is used for discharging to a field effect transistor grid electrode;
the lower arm drive circuit (300) is constructed the same as the upper arm drive circuit (200).
7. An electronic device, wherein a half-bridge topology switching power supply is provided on the electronic device, and the half-bridge topology switching power supply includes a driving circuit of the switching power supply, and the driving circuit of the switching power supply includes: a processor (100), an upper arm drive circuit (200), and a lower arm drive circuit (300); the processor (100) sends pulse width modulation signals to the upper arm drive circuit (200) and the lower arm drive circuit (300) respectively;
the upper arm drive circuit (200) includes: a potential conversion circuit (210), a totem-pole discharge circuit (220), a half-push-pull type drive circuit (230) and a field effect transistor grid discharge circuit (240); the processor (100) sends a pulse width modulation signal to the potential conversion circuit (210); the potential conversion circuit (210) is electrically connected with the totem-pole discharge circuit (220); the totem-pole discharge circuit (220) is electrically connected with the half-push-pull type drive circuit (230); the half-push-pull driving circuit (230) is electrically connected with the field effect transistor grid electrode discharging circuit (240);
the potential conversion circuit (210) is used for amplifying the voltage value of the pulse width modulation signal; the totem-pole discharge circuit (220) is used for amplifying the current value of the pulse width modulation signal; the half-push-pull type driving circuit (230) is used for outputting positive voltage in a conducting state; the field effect transistor grid electrode discharge circuit (240) is used for discharging to a field effect transistor grid electrode;
the lower arm drive circuit (300) is constructed the same as the upper arm drive circuit (200).
CN201811034212.6A 2018-09-05 2018-09-05 Drive circuit of switching power supply, half-bridge topology switching power supply and electronic equipment Pending CN110880858A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112803820A (en) * 2021-02-20 2021-05-14 广州富杰太阳能科技有限公司 High-frequency direct-drive sine wave inverter
CN112953477A (en) * 2021-02-26 2021-06-11 西安微电子技术研究所 Current type push-pull topology full-complementary driving circuit and method
CN113114110A (en) * 2021-04-23 2021-07-13 长城电源技术有限公司 Power supply driving module and power supply equipment

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112803820A (en) * 2021-02-20 2021-05-14 广州富杰太阳能科技有限公司 High-frequency direct-drive sine wave inverter
CN112803820B (en) * 2021-02-20 2021-10-19 广州富杰太阳能科技有限公司 High-frequency direct-drive sine wave inverter
CN112953477A (en) * 2021-02-26 2021-06-11 西安微电子技术研究所 Current type push-pull topology full-complementary driving circuit and method
CN112953477B (en) * 2021-02-26 2023-06-13 西安微电子技术研究所 Current type push-pull topology full-complementary driving circuit and method
CN113114110A (en) * 2021-04-23 2021-07-13 长城电源技术有限公司 Power supply driving module and power supply equipment
CN113114110B (en) * 2021-04-23 2023-05-05 长城电源技术有限公司 Power supply driving module and power supply equipment

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