CN110729380A - Photoelectric detector based on graphene wall/silicon composite heterojunction and preparation method thereof - Google Patents
Photoelectric detector based on graphene wall/silicon composite heterojunction and preparation method thereof Download PDFInfo
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 56
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 56
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 39
- 239000010703 silicon Substances 0.000 title claims abstract description 39
- 239000002131 composite material Substances 0.000 title claims abstract description 12
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 39
- 238000000034 method Methods 0.000 claims abstract description 15
- 230000008569 process Effects 0.000 claims abstract description 11
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 238000001259 photo etching Methods 0.000 claims abstract description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 4
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 238000004528 spin coating Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 3
- 238000011160 research Methods 0.000 abstract description 3
- 230000004044 response Effects 0.000 abstract description 3
- 230000004888 barrier function Effects 0.000 abstract description 2
- 238000001020 plasma etching Methods 0.000 abstract 2
- 230000003287 optical effect Effects 0.000 abstract 1
- 239000000969 carrier Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
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- 230000008859 change Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- -1 graphite alkene Chemical class 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
- H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table characterised by the doping material
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
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Abstract
The invention discloses a photoelectric detector based on a graphene wall/silicon composite heterojunction and a preparation method thereof. In the invention, in order to research a graphene wall/silicon composite photoelectric detector, the photoelectric detector of the graphene wall/silicon composite heterojunction is manufactured by using an n-doped silicon substrate, two layers of photoresist are adopted for photoetching, and then a Reactive Ion Etching (RIE) process is carried out, so that a high-quality graphene wall channel and a photoconductive detector based on graphene wall/silicon composite are realized. The graphene walls and silicon form schottky barriers that separate the photo-generated electron-hole pairs. The holes enter the graphene wall channel, and high optical response gain can be realized by utilizing a photo-induced gate control effect.
Description
Technical Field
The invention belongs to the technical field of photoelectric detectors, and particularly relates to a photoelectric detector based on a graphene wall/silicon composite heterojunction and a preparation method thereof.
Background
At present, photon type detectors are all photovoltaic type photoelectric detection, while photoconductive detectors based on graphene wall/silicon heterojunction have not been reported, one reason is that the preparation process of photoconductive devices is relatively complex, so that the research on the photoelectric detection mechanism of graphene wall/silicon heterojunction is lacked at present.
Disclosure of Invention
Aiming at the prior art, the invention provides a photoelectric detector based on a graphene wall/silicon composite heterojunction and a preparation method thereof.
In order to achieve the purpose, the invention adopts the technical scheme that: the utility model provides a photoelectric detector based on graphite alkene wall/silicon composite heterojunction and its preparation method, the preparation method specifically is:
graphene walls were grown using RF-PECVD at a certain pressure. (before growth, the silicon substrate is annealed at high temperature in H2 to grow the graphene nanowalls better.
After the graphene wall growth is completed, two layers of photoresist are spin-coated on the graphene wall, and the electrode pattern is exposed by using a photoetching method. Then, Cr and Au films were sequentially deposited on the graphene walls using electron beam evaporation. The device is then patterned by a lift-off process, i.e. the sample is placed in sequence in acetone and AZ400 to remove the two layers of used photoresist. And finally, setting the radio frequency power and the gas flow rate for the RIE etching machine to carry out patterning on the sample.
The invention has the beneficial effects that: the preparation of the photoelectric detector based on the graphene wall/silicon composite heterojunction avoids the transfer process of materials and prevents other chemical impurities from entering. And simultaneously, the graphene wall photoconductive channel patterning process is overcome. Finally, the photo-induced gate control effect of the photoconductive graphene wall/silicon heterojunction is disclosed, and a new development opportunity is provided for the graphene wall/semiconductor heterojunction.
Drawings
FIG. 1 is an SEM image of a photodetector;
FIG. 2 is a plan cross-sectional view of the device;
FIG. 3 is an n-si band diagram;
FIG. 4 shows the application of an external bias VDSIn the case ofNext, working process of the device;
FIG. 5 shows the variation of current within the device;
FIG. 6 shows the photoelectric gain phenomenon of the device;
fig. 7 shows the recombination process of holes and electrons in the device.
Detailed Description
The following examples are provided to illustrate specific embodiments of the present invention.
The first embodiment is as follows: preparation of photoelectric detector based on graphene wall/silicon composite heterojunction
Graphene walls were grown using RF-PECVD at a certain pressure. (before growth, the silicon substrate is annealed at high temperature in H2 to grow the graphene nanowalls better.
After the graphene wall growth is completed, two layers of photoresist are spin-coated on the graphene wall, and the electrode pattern is exposed by using a photoetching method. Then, Cr and Au films were sequentially deposited on the graphene walls using electron beam evaporation. The device is then patterned by a lift-off process, i.e. the sample is placed in sequence in acetone and AZ400 to remove the two layers of used photoresist. And finally, setting the radio frequency power and the gas flow rate for the RIE etching machine to carry out patterning on the sample.
Example two: analysis of results
The preparation of the photoelectric detector based on graphene wall/silicon heterojunction composition solves the problem of the patterning process of the graphene wall, and the channel pattern is subjected to SEM imaging. As shown in fig. 1, the metal electrodes, graphene wall channels and silicon substrate are clearly visible. Meanwhile, a double-layer glue process and an etching process can be adopted to obtain a clean graphene wall without residues, the boundary line of the etched channel is obvious, the graphene wall of a non-channel region is removed, and the structure of the graphene wall in the channel region is kept complete.
In order to research the mechanism of the photoelectric detector with the GNW/Si heterojunction, a basic device structure, an energy band diagram of a Schottky junction region and a photogate control effect of a graphene wall/silicon heterojunction are designed. Fig. 2 is a plan cross-sectional view of the device. The graphene oxide thin film transistor comprises a graphene wall, wherein the central part of the graphene wall physically covers the top of a bare silicon surface, and the graphene wall is connected with an external electrode on the bare silicon surface. Figure 3 shows an n-si band diagram with the fermi level of the graphene wall lower than that of silicon. When the graphene wall is in contact with silicon, some electrons flow from the silicon to the graphene wall until the fermi level at the end is the same. Due to the movement of electrons, space charge regions and built-in electric fields from silicon to graphene walls are formed between the graphene walls and the silicon. When light is irradiated onto the device, electron-hole pairs generated in the silicon and carriers are separated into the space charge region under the influence of the built-in electric field. The electrons flow to the silicon and the holes flow to the graphene wall, resulting in a large photovoltage difference between the graphene wall and the silicon.
With an externally biased VDS applied, as in the dark of fig. 4, the dark current Idark flows through the external circuit due to the intrinsic carriers in the graphene walls, which when illuminated, generates electron-hole pairs in the silicon. Due to the nature of the schottky barrier formed at the junction, electrons move into the silicon and holes will pass through the junction region and be injected into the conductive channels of the graphene wall, into the graphene wall. These additional holes can cause a change in current, as shown in fig. 5. If the transmission speed of the carriers in the graphene wall channel is very fast, the carriers injected in the graphene wall will be replaced many times before electrons in silicon recombine, so as to obtain a large photoelectric gain, as shown in fig. 6. Clearly, the photo-electric gain performance depends on the length of the channel, the carrier mobility and the lifetime of the electrons in the silicon. The shorter the channel, the higher the carrier mobility, the longer the electron lifetime in silicon, resulting in greater quantum gain and greater photoelectric response of the detector. When dark, the carrier lifetime ends, holes flow back into the silicon in reverse, and holes and electrons recombine, as in fig. 7. Eventually, the photoelectric response ends.
While the present invention has been described in detail with reference to the embodiments, it should not be construed as limited to the scope of the patent. Various modifications and changes may be made by those skilled in the art without inventive step within the scope of the appended claims.
Claims (2)
1. A preparation method of a photoelectric detector based on a graphene wall/silicon composite heterojunction is characterized by comprising the following steps:
s1: placing the silicon substrate in H2Carrying out high-temperature annealing;
s2: growing a graphene wall on a silicon substrate under certain pressure by using RF-PECVD; meanwhile, turning on the radio frequency, and setting the radio frequency power;
s3: after the graphene wall is grown, spin-coating two layers of photoresist on the graphene wall, and exposing an electrode pattern by using a photoetching method;
s4: depositing Cr and Au films on the graphene wall in sequence by using electron beam evaporation;
s5: patterning the device by a stripping process, namely sequentially placing a sample in acetone and AZ400 to remove two layers of used photoresist;
s6: setting the radio frequency power and the gas flow rate for the RIE etching machine to carry out patterning on the sample.
2. A photodetector prepared by the method of claim 1.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101571351B1 (en) * | 2015-02-05 | 2015-11-24 | 부산대학교 산학협력단 | Production method of silicon-graphene heterojunction solar cell and silicon-graphene heterojunction solar cell producted by the same |
| CN109216496A (en) * | 2018-10-22 | 2019-01-15 | 北京工业大学 | The silicon Schotty PIN Junction detector PIN of graphene is directly grown using Parylene N thin film |
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- 2019-10-23 CN CN201911010071.9A patent/CN110729380A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101571351B1 (en) * | 2015-02-05 | 2015-11-24 | 부산대학교 산학협력단 | Production method of silicon-graphene heterojunction solar cell and silicon-graphene heterojunction solar cell producted by the same |
| CN109216496A (en) * | 2018-10-22 | 2019-01-15 | 北京工业大学 | The silicon Schotty PIN Junction detector PIN of graphene is directly grown using Parylene N thin film |
Non-Patent Citations (1)
| Title |
|---|
| 张辉: ""基于石墨烯墙的光电探测器"", 《中国优秀硕士学位论文全文数据库信息科技辑》 * |
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