CN110710070A - 半导体激光器器件和用于制造半导体激光器器件的方法 - Google Patents
半导体激光器器件和用于制造半导体激光器器件的方法 Download PDFInfo
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- CN110710070A CN110710070A CN201880035952.3A CN201880035952A CN110710070A CN 110710070 A CN110710070 A CN 110710070A CN 201880035952 A CN201880035952 A CN 201880035952A CN 110710070 A CN110710070 A CN 110710070A
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Abstract
提出一种半导体激光器器件,具有:‑半导体芯片(1),其设计为发射激光辐射(6),‑包覆部(2),其是电绝缘的并且局部覆盖半导体芯片(1),和‑连接层(3),其将半导体芯片(1)与第一连接部位(43a)导电地连接,其中‑半导体芯片(1)包括覆盖面(1a)、底面(1b)、第一端面(1c)、第二端面(1d)、第一侧面(1e)和第二侧面(1f),‑第一端面(1c)设计为耦合输出激光辐射(6),‑包覆部(2)至少局部在覆盖面(1a)、第二端面(1d)、第一侧面(1e)和第二侧面(1f)处覆盖半导体芯片(1),以及‑连接层(3)在包覆部(2)上从覆盖面(1a)伸展至第一连接部位(43a)。
Description
背景技术
出版物DE 10 2004 024156描述了一种半导体激光器器件。
发明内容
要解决的目的在于,提出一种半导体激光器器件,其特别紧凑。另一要解决的目的在于,提出一种用于制造这种半导体激光器器件的方法。
提出一种半导体激光器器件。
根据半导体激光器器件的至少一个实施方式,半导体激光器器件包括半导体芯片,所述半导体芯片设计为发射激光辐射。也就是说,在运行中,半导体芯片发射电磁辐射,例如在红外辐射和UV辐射之间的光谱范围中的电磁辐射。电磁辐射尤其具有大的相干长度。例如,半导体芯片设计为,在运行中产生脉冲式的激光辐射。在此,脉冲长度可以在皮秒范围中或在飞秒范围中。
半导体芯片尤其是边发射的半导体激光器芯片,其中激光辐射在半导体芯片的端面、即棱面处出射。
根据半导体激光器器件的至少一个实施方式,器件包括包覆部,所述包覆部是电绝缘的并且局部覆盖半导体芯片。包覆部例如包括电绝缘的基质材料,其他材料的颗粒可以引入到所述基质材料中。包覆部电绝缘地构成并且可以局部直接与半导体芯片邻接。在此可行的是,包覆部直接与半导体芯片的半导体材料、接触材料和/或钝化材料邻接。
根据至少一个实施方式,半导体激光器器件包括连接层,所述连接层将半导体芯片与半导体激光器器件的第一连接部位导电地连接。连接层是由能导电的材料构成的层,所述层例如包括一种金属或多种金属的组合。该层具有如下厚度,所述厚度例如可以在最小1μm和最高15μm之间。连接层的厚度在制造公差的范围内在连接层的总延伸上是恒定的。
此外,连接层具有如下宽度,所述宽度大于连接层的厚度。连接层的宽度例如可以处于半导体芯片的边长的数量级中,例如可以处于半导体芯片的端面处的边长的数量级中。例如,连接层的宽度为至少0.1mm和最高1mm。连接层在此例如可以通过溅射和/或沉积、例如无电流的或电镀的沉积来产生。
根据半导体激光器器件的至少一个实施方式,半导体芯片包括覆盖面、底面、第一端面、第二端面、第一侧面和第二侧面。在此,可行的是,半导体芯片方形地构成并且除了上述面之外不包括其他外面。覆盖面与底面相对置地设置,第一端面与第二端面相对置地设置,并且第一侧面与第二侧面相对置地设置。端面可以与覆盖面、底面和侧面夹有角度,该角度例如在制造公差的范围内在85°和95°之间,尤其为90°。在此,例如第一侧面和第二侧面具有尤其在制造公差的范围内相同的面积,该面积大于第一端面和第二端面的面积。
根据半导体激光器器件的至少一个实施方式,第一端面设计为将激光辐射耦合输出。也就是说,在第一端面处存在半导体芯片的辐射穿透面,在运行中产生的激光辐射通过辐射穿透面从半导体芯片射出。
根据半导体激光器器件的至少一个实施方式,包覆部至少局部地在覆盖面、第二端面、第一侧面和第二侧面处覆盖半导体芯片。换言之,在这些面中的每个面上至少分区域地施加有包覆部的材料。在此可行的是,所述面中的至少一些面完全由包覆部覆盖。
根据半导体激光器器件的至少一个实施方式,连接层在包覆部上从半导体芯片的覆盖面伸展至半导体激光器器件的第一连接部位。在此可行的是,连接层在半导体芯片的覆盖面处与所述半导体芯片直接接触。例如,半导体芯片在其覆盖面处包括接触面,所述接触面可以由金属形成。连接层于是在那里与半导体芯片直接接触。
连接层从半导体芯片的覆盖面经由包覆部延伸至第一连接部位并且与第一连接部位导电地连接。在此可行的是,至少一个另外的导电的元件、如例如过孔或另一导电的本体设置在连接层与第一连接部位之间。也就是说,连接层与第一连接部位不必直接物理接触,而是可以与第一连接部位仅导电地连接。第一连接部位是器件的设为用于从外部接触的部件。
例如,第一连接部位包括接触层,所述接触层为了接触可以由焊料材料或能导电的粘合剂润湿。经由第一连接部位,半导体激光器器件例如可以在n侧或在p型接触。第一连接部位为此在n侧或在p侧与半导体激光器器件的半导体芯片连接。
连接层尤其可以伸展穿过包覆部中的开口,所述开口在横向于或垂直于器件的主延伸平面的方向上完全地穿透包覆部。
在这里所描述的半导体激光器器件中可行的是,半导体激光器器件包括一个或多个半导体芯片,其尤其可以相同类型地构成。也就是说,半导体激光器器件包括两个或更多个半导体芯片,这样半导体芯片、尤其在制造公差的范围内构成为产生相同类型的激光辐射,例如在相同的波长范围中,具有相同的脉冲持续时间和/或相同的相干长度。在此可行的是,器件的半导体芯片经由连接层彼此导电地连接并且例如经由连接层彼此并联地或串联地电连接。
此外可行的是,半导体芯片是边发射的半导体激光棒,在所述半导体激光棒的端面处,激光辐射在不同的部位射出。例如,这样的半导体激光棒可以包括两个或更多个发射器,其发射例如相同类型的激光辐射。
根据至少一个实施方式,提出一种半导体激光器器件,具有:
-半导体芯片,其设计为发射激光辐射,
-包覆部,其是电绝缘的并且局部覆盖半导体芯片,和
-连接层,其将半导体芯片与第一连接部位导电地连接,其中
-半导体芯片包括覆盖面、底面、第一端面、第二端面、第一侧面和第二侧面,
-第一端面设计为耦合输出激光辐射,
-包覆部至少局部在覆盖面、第二端面、第一侧面和第二侧面处覆盖半导体芯片,以及
-连接层在包覆部上从覆盖面伸展至第一连接部位。
这里所描述的半导体激光器器件尤其没有连接线(所谓的键合线)。半导体激光器器件的半导体芯片的电接触例如一方面经由在半导体芯片的底面上的大面积的接触部并且另一方面经由连接层进行,所述连接层将半导体芯片与半导体激光器器件的连接部位导电地连接。由于代替接触线使用连接层,所以半导体激光器器件具有特别小的电感。由此,半导体激光器器件特别好地适合于产生特别短的激光脉冲。连接层在包覆部上伸展,所述包覆部一方面承载连接层并且另一方面是用于半导体芯片的机械和化学保护。
除了器件的低的和可良好限定的电感之外,省去线接触也提供如下优点:器件的特征在于小的器件尺寸。尤其是,器件的体积主要由半导体芯片的体积确定,使得半导体激光器器件可以是CSP(Chip Scale Package(芯片级封装))器件。尤其是,器件的特征可以在于在垂直于器件的主延伸平面的方向上的特别小的器件厚度。例如,器件的厚度为最高500μm,尤其至少100μm和最高350μm。
此外,这里所描述的半导体激光器器件是可缩放的,即在不进行根本的设计改变的情况下就可以使用多个相同类型的半导体芯片或半导体激光棒来代替单个的半导体芯片。由此可行的是,总体上提出一种具有特别大的输出功率的器件。
根据半导体激光器器件的至少一个实施方式,半导体激光器器件构成为是可表面安装的。也就是说,半导体激光器器件可以借助于表面安装技术安装在目的地处。半导体激光器器件为此仅具有电连接部位,其设置在器件的下侧上。
根据半导体激光器器件的至少一个实施方式,包覆部在垂直于或横向于第一端面的方向上突出于第一端面。在此可行的是,包覆部覆盖第一端面,或第一端面没有包覆部。但包覆部在如下情况下也横向地或垂直地引导超出第一端面:端面没有包覆部。以此方式,包覆部由于超出第一端面的超出部是第一端面从而半导体芯片的辐射穿透面的机械保护。
根据半导体激光器器件的至少一个实施方式,包覆部完全地覆盖第一端面和构成为对激光辐射是可透过的。在此情况下,第一端面通过包覆部相对于化学和机械损伤特别好地受到保护。然而,激光辐射并不耦合输出到空气,而是首先透射包覆部的设置在第一端面上的部分。包覆部为此由辐射可透过的材料形成,其特征在于对穿过的激光辐射的尽可能低的吸收。例如,该材料对激光辐射具有至少90%的透过率,尤其至少95%的透过率,并且构成为对激光辐射是透明的。
根据半导体激光器器件的至少一个实施方式,包覆部构成为是可光致结构化的。也就是说,包覆部由可光致结构化的材料构成。在此可行的是,可光致结构化的材料构成为对于激光辐射是可透过或不可透过的。对于可光致结构化的材料构成为对激光辐射不可透过的情况,可行的是,通过激光技术移除包覆部的在包覆半导体芯片之后覆盖第一端面的区域。
可光致结构化的材料例如可以是光刻胶或可光致结构化的硅氧烷。为此,例如可以使用ShinEtsu公司的硅氧烷SINR。通常,该材料作为粘合剂用于连接晶片。这例如在出版物“Adhesive wafer bonding using photosensitive polymer layers(发表于SPIE-Microtechnologies for the New Millennium,symposia“Smart Sensors,Actuators,andMEMS”(2009年五月4日-6日,德国德累斯顿)”中描述。该文献关于SINR-Siloxan的内容通过引用结合于此。
令人意想不到地已证实的是,可光致结构化的硅氧烷也适合于包覆半导体芯片,所述半导体芯片在运行中产生激光辐射。可光致结构化的硅氧烷是负性漆,在所述负性漆的情况下,经曝光的区域交联并且保留在产品中。以此方式,通过有针对性地曝光可光致结构化的材料可以规定在器件中保留的区域。
在此,可光致结构化的硅氧烷的特征也在于,其对于在半导体芯片中产生的激光辐射是可透过的并且因此可以保留在第一端面处。会产生不利作用的是,该材料具有例如200ppm/K的高的热膨胀系数。为了降低热膨胀系数可行的是,将其他材料的颗粒,例如由玻璃、例如石英玻璃(英语:fused silica)构成的颗粒引入到可光致结构化的材料中。
然而,除了所描述的可光致结构化的硅氧烷之外也可行的是,包覆部通过其他材料形成。例如,包覆部可以包含如下材料中的一种材料或由如下材料中的一种材料形成:环氧化物、氧化硅、氮化硅、氧化铝。尤其是,环氧树脂由于其相对低的例如60ppm/K的膨胀系数是合适的,所述膨胀系数通过引入由石英玻璃构成的颗粒可以减小到最高40ppm/K的膨胀系数。
根据半导体激光器器件的至少一个实施方式,半导体激光器器件包括载体,其中器件的第一连接部位和第二连接部位在载体的背离半导体芯片的下侧上构成。载体例如可以是电路板,印刷电路板,具有连接部位和过孔的陶瓷载体或为引线框架(英语:leadframe)的连接框架件。在此,有利地可行的是,在制造半导体激光器器件时可以在载体上进行工艺处理。也就是说,载体例如可以形成工具的一部分,利用该部分围绕半导体芯片施加包覆部。
但替选地也可行的是,器件没有载体。在此,在器件的下侧上例如可以露出半导体芯片的接触面。半导体芯片的所述接触面例如可以形成半导体激光器器件的第二连接部位。此外,在器件的下侧处,连接层的在那里露出的部分可以形成第一接触部位。对于半导体激光器器件没有载体的情况,半导体激光器器件的机械稳定性主要通过包覆部或其他灌封体保证。在此情况下可以有利的是,包覆部由机械特别稳定的材料、如例如环氧化物构成和/或例如可由环氧化物形成的其他灌封体模制到包覆部和连接层上。
这里所描述的半导体激光器器件可以通过第一接触部位和第二接触部位直接接触。此外,可行的是,在接触部位处构成有其他接触结构,如例如平坦接触部(英语:“landgrid area(连接盘网格区域),LGA”)或焊料球(英语:“ball grid area(球网格区域),BGA”)。
根据半导体激光器器件的至少一个实施方式,包覆部局部直接与载体邻接。这尤其在如下情况下如此:载体形成用来施加包覆部的灌封工具的一部分。通过在包覆部与载体之间的接触此外可行的是,包覆部特别好地锚固在器件中并且减小了包覆部脱落的风险。
根据半导体激光器器件的至少一个实施方式,载体包括第一连接框架件和第二连接框架件。载体的连接框架件例如可以是引线框架的一部分,所述引线框架由导电的材料、如例如铜形成。连接框架件可以直接与包覆部邻接并且第一连接框架件可以经由连接层导电地与半导体芯片连接。
也就是说,在该实施方式中尤其可行的是,包覆部除了其特征之外作为用于连接层的进行承载的部件和作为用于半导体器件的进行保护的部件确保载体、尤其连接框架件的机械接合。在此实施方式中,环氧化物材料的使用特别好地适合于形成包覆部,因为以此方式可以特别好地确保器件的机械稳定性。在此,必需的是,半导体芯片的第一端面至少局部没有包覆部,以便确保激光辐射不受干扰地射出。
半导体激光器器件的第一连接部位于是例如通过第一连接框架件的背离连接层的下侧形成。半导体激光器器件的第二连接部位可以通过第二连接框架件的背离连接层的下侧形成。
根据该半导体激光器器件的至少一个实施方式,载体在横向方向上与包覆部平齐。也就是说,可行的是,器件的将器件侧向对外限界并且例如平行于半导体芯片的侧面和端面伸展的侧面局部通过载体和包覆部形成,其中载体和包覆部在侧面处彼此平齐并且共同地在每个侧面处构成平坦的面。以此方式,半导体器件特别紧凑地构成并且可以特别简单地安装。
根据该半导体激光器器件的至少一个实施方式,包覆部局部地作为恒定厚度的层覆盖载体和半导体芯片。尤其是,包覆部于是贴合地遮盖载体和半导体芯片。尤其在此情况下,为了形成包覆部,可以使用介电层,其由如下材料构成:如氧化硅、氮化硅或氧化铝。此外,可行的是,包覆部在此情况下通过可光致结构化的硅氧烷形成。包覆部的厚度在此实施方式中例如为至少1μm和最高30μm。由于小的层厚度,用来形成包覆部的材料的高的热膨胀系数并不像在更厚的包覆部的情况下发挥强烈作用,更厚的包覆部并不贴合地遮盖半导体芯片,而是厚于半导体芯片地构成。也就是说,对于构成为恒定厚度的薄层的包覆部而言,作用于连接层的热机械应力减小。此外在该实施方式中尤其也可行的是,第一端侧保持没有包覆部的材料,使得也考虑对于激光辐射具有降低的可透过性的材料来形成包覆部。
根据半导体器件的至少一个实施方式,半导体器件包括灌封体,所述灌封体局部直接与包覆部和连接层邻接。灌封体例如可以是由环氧化物、硅树脂或其他塑料构成的灌封体。灌封体也可以存在于半导体芯片的第一端面上,并且覆盖半导体芯片的第一端面。尤其在用于形成包覆部的薄的贴合的层的情况下和/或当器件没有载体的情况下,灌封体可以贡献于机械稳定器件。此外,灌封体形成半导体激光器器件的其他部件的机械和化学保护。
此外,提出一种用于制造这里所描述的半导体激光器器件的方法。也就是说,所有针对半导体激光器器件公开的特征对于方法而言也是公开的,反之亦然。
在该方法中,首先将半导体芯片施加到载体上。载体在此可以是上文所描述的载体之一,所述载体在随后的器件中用于接触半导体激光器。此外,可行的是,载体是辅助载体,其在该方法结束之后可以剥离。
在另一方法步骤中,半导体芯片的包覆借助包覆部进行,其中仅仅半导体芯片的底面保持没有包覆部。半导体芯片的底面朝向载体并且以此方式由包覆材料保护。
在后续的方法步骤中,接着使半导体芯片的覆盖面局部露出。使半导体芯片的覆盖面露出例如可以通过对可光致结构化的包覆材料进行相应的处理来进行。也就是说,包覆材料例如可以通过曝光并且接着刻蚀来去除。
如果包覆材料例如是环氧化物,则也可以通过激光辐射、例如通过所谓的激光钻孔移除。
此外,包覆材料也可以在其他部位处被有针对性地移除,以便将第一端面的区域中的包覆材料打薄或移除,并且实现用于将后续要施加的连接层朝载体穿引的可能性。
在另一方法步骤中,在包覆部的背离载体的上侧处和在半导体芯片的覆盖面处施加连接层。
在该方法中可行的是,载体保留在器件中和在器件中用于机械稳定和电接触器件的其他部件。
根据该方法的至少一个实施方式,替选地可行的是,在用包覆部包覆半导体芯片之后移除载体。以此方式可行的是,在器件的下侧处可自由触及半导体芯片的、连接层的和包覆部的区域。不具有载体的器件在此有利地薄地构成并且可以在热学上直接连接在目的地上,由此能够使在半导体芯片运行时的热量导出变得容易。器件的必要的机械稳定性于是例如可以通过包覆部来提供,所述包覆部由可承受机械负荷的材料、如环氧化物形成和/或在器件中存在这里所描述的灌封体,所述灌封体可以用于进一步的稳定。
此外,这里所描述的半导体激光器器件的特征在于,半导体芯片可以通过辐射可透过的、透明的、可光致结构化的材料来包覆,由此一方面能够实现用于激光辐射的光学出射窗而另一方面能够在半导体芯片的覆盖面处实现用于接触半导体芯片的通道。包覆部在此能够以小的层厚度贴合地遮盖半导体芯片。该材料要么可以覆盖半导体芯片的第一端侧,即例如通过灌封工具模制到半导体芯片的第一端面上,并且可以作为辐射可透过的材料保留在那里或作为可光致结构化的材料从端面移除。由此可行的是,半导体芯片的角部和棱边通过该材料受到保护,并且通过有针对性地在第一端面处移除该材料防止光学损害。
附图说明
在下文中根据实施例和所属的附图详细地阐述这里所描述的半导体激光器器件以及这里所描述的方法。
图1、2、3A、3B、4、5、6、7A、7B、7C根据示意性视图示出这里所描述的器件的实施例。
根据图8A、8B、8C、8D的示意性剖视图详细阐述这里所描述的方法的实施例。
具体实施方式
相同的、相似的或作用相同的元件在附图中设有相同的附图标记。这些附图和在这些附图中所示的元件彼此间的大小关系并不视为是合乎比例的。更确切地说,为了更好的可视性和/或为了更好的理解而夸大地示出个别元件。
图1以剖视图示出这里所描述的半导体激光器器件的一个实施例。该器件包括半导体芯片1。半导体芯片1是边发射的半导体激光器芯片。半导体芯片1包括覆盖面1a以及背离覆盖面1a的底面1b。此外,半导体芯片包括第一端面1c和背离第一端面1c的第二端面1d。此外,半导体芯片包括第一侧面1e和背离第一侧面的侧面1f(为此例如参见图7A和7C)。
激光辐射6在第一端面1c处离开半导体芯片1。
此外,该器件包括包覆部2。包覆部2例如借助可光致结构化的硅氧烷、如SINR以及硅树脂和/或环氧树脂形成。包覆部2局部在半导体芯片的覆盖面1a处覆盖半导体芯片。此外,包覆部2完全在第一侧面1e和第二侧面1f以及第二端面1d处覆盖半导体芯片1。在图1的实施例中,包覆部2也完全在第一端面1c处覆盖半导体芯片1。包覆部2为此构成为对于激光辐射6是可透过的并且尤其是透明的。
在覆盖面1a上,半导体芯片1局部地没有包覆部2。在那里,半导体芯片1与连接层3直接地机械和电接触。连接层3从半导体芯片1的覆盖面1a在包覆部2之上和穿过包覆部中的开口朝向载体4延伸。
载体4具有基本体41,该基本体由电绝缘的材料形成。在基本体41中设置有过孔42,所述过孔例如由导电的材料形成。例如,过孔42由导电的实心体形成,所述实心体例如可以由金属、如铜构成,或朝向基本体41的内面在过孔的区域中由导电的材料覆层。基本体41可以由塑料、陶瓷材料或玻璃形成。
过孔42的背离包覆部2的下侧形成器件的连接部位43a、43b。在此,连接层3与第一连接部位43a导电地连接。第二连接部位43b经由过孔42与半导体芯片1的下侧连接,所述半导体芯片在那里具有用于电接触的接触面。
连接层3例如通过层堆形成,所述层堆具有堆叠方向,该堆叠方向垂直于器件的主延伸平面伸展。层堆例如包括层,所述层由钛形成,所述层可以直接与包覆部2邻接。在该层上可以设置有由铜形成的层。钛层例如可以具有在100nm的范围中的厚度,并且铜层可以具有在1000nm的范围中的厚度。在铜层的背离包覆部2的侧上可以施加有另一铜层,所述另一铜层具有例如在10μm的范围中的厚度。钛层以及第一铜层例如通过溅射施加,第二铜层能够以电镀方式沉积。以此方式,形成连接层3,所述连接层沿着垂直于器件的主延伸平面的方向具有在10μm和15μm之间的范围中的厚度。
包覆部2在图1的实施例中在平行于器件的主延伸平面的横向方向上与载体4平齐。图1的器件是可表面安装的。
在图1的器件的一个变型方案中,可以移除载体4。在此情况下,在制造期间的载体可以是辅助载体,该辅助载体例如通过塑料材料形成。在此情况下,在半导体芯片的下侧处的接触面以及连接层3的下侧构成连接部位43a、43b,用于器件的表面安装。
结合图2,示出另一实施例,其中包覆部2构成为层,所述层贴合地遮盖载体4和半导体芯片1。包覆部2在此情况下例如由SINR、氧化硅、氮化硅、氧化铝和/或其他氧化物或氮化物形成。包覆部2在此实施例中可以具有在至少1μm和最高30μm之间的厚度,其中该厚度在制造公差的范围内是恒定的。在此可行的是,在端侧1c处未设置包覆部2的材料,由此也可以使用对于激光辐射6不能透过的材料。
在图2的实施例中,器件还具有灌封体5,其例如由硅树脂形成。灌封体5例如可以通过模压成型来产生。灌封体5覆盖包覆部2、载体4以及连接层3。其用于机械稳定和机械和化学保护器件的部件。
尤其在该实施方式中,又可能的是,载体4并不存在。器件的机械稳定性于是例如可以通过相应厚地构成的灌封体5确保。
结合图3A和3B,描述了如下实施例,其中载体通过第一连接框架件44a和第二连接框架件44b形成。如尤其从图3B中可看到的那样,连接框架件44a、44b是刻蚀的引线框架的一部分。半导体芯片1例如通过焊接机械地固定和电连接在第二连接框架件44b的背离第二连接部位43b的上侧上。
在图3A和3B的实施例中,可行的是,连接框架件在施加半导体芯片之前由包覆材料平坦地包覆,其中连接框架件44a、44b的背离连接部位43a、43b的上侧保持没有包覆材料。包覆材料例如可以是环氧化物。接着,可以将所述被包覆的连接框架件用作为载体4。作为包覆部2于是可以使用也用来包覆连接框架件44a、44b的相同的材料。
替选地,可行的是,在安装半导体芯片1之后实现包覆部2并且包覆部2在横向方向上也包围连接框架件44a、44b,使得连接框架件直接与包覆部邻接。包覆部2由此用于将连接框架件44a、44b彼此机械连接,包覆半导体芯片1以及用作为用于施加连接层3的载体。也就是说,尤其地,包覆部也形成载体4的基本体41。
第一连接框架件44a经由连接层4导电地与半导体芯片1连接。如在图3B中所表明的那样,多个这样的半导体激光器器件可以在引线框架复合件中制造并且在用包覆部2包覆之后可以分开成各个器件。
结合图4的示意性剖视图详细地阐述这里所描述的半导体激光器器件的另一实施例。在该实施例中,载体4例如通过电路板、例如印刷电路板或陶瓷载体形成。载体4具有过孔42,所述过孔将载体的上侧上的第一接触部位54a与第一连接部位43a导电地连接,并且将第二接触部位45b与第二连接部位43b导电地连接。在图4的实施例中示出,包覆部沿着垂直于半导体器件的主延伸平面的方向伸出半导体芯片1。包覆部2在此例如具有厚度h2,所述厚度比半导体芯片1厚至少10μm,尤其厚至少40μm。例如,半导体芯片1具有110μm的厚度h1和包覆部2具有150μm的厚度h2。
结合图5的示意性剖视图,详细阐述这里所描述的器件的另一实施例。在该实施例中,包覆部2构成为贴合的层,其也用作为载体4的基本体41并且将连接框架件44a、44b彼此牢固地机械连接。为了机械稳定,器件在图5的实施例中包括灌封体5,该灌封体在其朝向侧面1c的侧上可以倾斜地构成,以便以此方式提供用于激光辐射6的倾斜的辐射出射面。
结合图6,详细阐述这里所描述的半导体激光器器件的另一实施例的局部。在图6的实施例中,半导体激光器1施加到安装元件7(英语:submount)上。安装元件7例如可以用作为散热件并且由陶瓷材料或金属材料形成。安装元件7可以导电地与半导体芯片1连接并且经由与连接层3相同地或类似地构成的另一连接层3’电连接。在此情况下可行的是,安装元件7电绝缘地构成,并且经由在安装元件7和半导体芯片1之间的导电层建立在另一连接层3’与半导体芯片1之间的电连接。替选地,安装元件7可以导电地构成并且可以省去另一连接层3’。安装元件7的使用在此在半导体激光器器件的任何在此所描述的实施方式中是可能的。
结合图7A、7B、7C,详细阐述这里所描述的半导体激光器器件的另一实施例。在该实施例中,第一端面1c没有包覆材料2并且例如在施加包覆材料2之后从端面移除。然而,沿着垂直于端面1c的方向,包覆材料2突出于端面1,以便以此方式形成对端面的机械保护。图7A在此示意性地示出半导体芯片1的覆盖面1a的俯视图。图7B示出示意性的侧向剖视图而图7C示出端面1c的俯视图。
结合图8A至8D,详细阐述用于制造这里所描述的半导体激光器器件的方法的一个实施例。
在第一方法步骤中,图8A,将半导体芯片1施加到载体4上,该载体例如包括过孔或通孔42,其由基本体41包围。替选地,载体4可以是辅助载体,所述辅助载体不包括导电的结构。在下文中,包覆部2、例如可光致结构化的硅氧烷、硅树脂或环氧化物施加到半导体芯片1和载体4之上。包覆部2的层厚度在此大于芯片,使得芯片由包覆部2高出。
在接下来的方法步骤中,图8B,局部移除包覆部2,由此在包覆部2中形成开口21。开口21的制造例如在可光致结构化的材料的情况下通过曝光、显影和刻蚀来进行。在其他材料的情况下,例如可以使用激光剥离方法、如例如激光钻孔。
在接下来的方法步骤中,图8C,连接层3贴合地施加在半导体芯片1的覆盖面和包覆部2的背离载体4的上侧上。连接层在此可以伸展穿过包覆部2中的开口21,所述开口在横向于或垂直于器件的主延伸平面的方向上完全穿透包覆部2。
在最终的方法步骤中,图8D,进行分割。分割在此例如通过锯割或激光分离进行。利用该方法例如制造如结合图1所描述的器件。
替选地,在该方法结束之后可以移除载体4,使得产生不具有载体的可表面安装的器件。此外,该方法的变型方案是可行的,其得到如结合其余在此所描述的实施例所示出的器件。
本专利申请要求德国专利申请102017112223.0的优先权,其公开内容通过引用结合于此。
本发明并不因根据实施例的描述而限于此。更确切地说,本发明包括任意新特征以及特征的任意组合,这尤其包含权利要求中的特征的任意组合,即使这些特征或组合本身并未明确地在权利要求或实施例中予以说明也如此。
附图标记表
1 半导体芯片
1a 覆盖面
1b 底面
1c 第一端面
1d 第二端面
1e 第一侧面
1f 第二侧面
2 包覆部
21 开口
3 连接层
4 载体
41 基本体
42 过孔
43a 第一连接部位
43b 第二连接部位
44a 第一连接材料
44b 第二连接材料
45a 第一接触部位
45b 第二接触部位
5 灌封体
6 电磁辐射
7 安装元件
h1 半导体芯片的厚度
h2 包覆部的厚度
Claims (16)
1.一种半导体激光器器件,具有:
-半导体芯片(1),所述半导体芯片设计为发射激光辐射(6),
-包覆部(2),所述包覆部是电绝缘的并且局部覆盖所述半导体芯片(1),和
-连接层(3),所述连接层将所述半导体芯片(1)与第一连接部位(43a)导电地连接,其中
-所述半导体芯片(1)包括覆盖面(1a)、底面(1b)、第一端面(1c)、第二端面(1d)、第一侧面(1e)和第二侧面(1f),
-所述第一端面(1c)设计为耦合输出激光辐射(6),
-所述包覆部(2)至少局部地在所述覆盖面(1a)、所述第二端面(1d)、所述第一侧面(1e)和所述第二侧面(1f)处覆盖所述半导体芯片(1),以及
-所述连接层(3)在所述包覆部(2)上从所述覆盖面(1a)伸展至所述第一连接部位(43a)。
2.根据上一权利要求所述的半导体激光器器件,
所述半导体激光器器件是可表面安装的。
3.根据上述权利要求中任一项所述的半导体激光器器件,
其中所述包覆部(2)沿着垂直于或横向于所述第一端面(1c)的方向突出于所述第一端面(1c)。
4.根据上述权利要求中任一项所述的半导体激光器器件,
其中所述包覆部(2)至少局部地覆盖所述第一端面(1c)。
5.根据上述权利要求中任一项所述的半导体激光器器件,
其中所述包覆部(2)完全地覆盖所述第一端面(1c)和对于激光辐射(6)是可透过的。
6.根据上述权利要求中任一项所述的半导体激光器器件,
其中所述包覆部(2)是可光致结构化的。
7.根据上述权利要求中任一项所述的半导体激光器器件,
所述半导体激光器器件具有载体(4),其中所述第一连接部位(43a)和第二连接部位(43b)在所述载体(4)的背离所述半导体芯片(1)的下侧上构成。
8.根据上一权利要求所述的半导体激光器器件,
其中所述包覆部(2)局部地直接与所述载体(4)邻接。
9.根据上两项权利要求中任一项所述的半导体激光器器件,
-所述载体(4)包括第一连接框架件(44a)和第二连接框架件(44a),
-所述连接框架件(44a,44b)直接与所述包覆部(2)邻接并且在横向方向上由所述包覆部(2)包围,和
-所述第一连接框架件(44a)经由所述连接层(3)导电地与所述半导体芯片(1)连接。
10.根据上三项权利要求中任一项所述的半导体激光器器件,
其中所述载体(4)在横向方向上与所述包覆部(2)平齐。
11.根据上四项权利要求中任一项所述的半导体激光器器件,
其中所述包覆部(2)局部地作为恒定厚度的层贴合地遮盖所述载体(4)和所述半导体芯片(1)。
12.根据上述权利要求中任一项所述的半导体激光器器件,
其中灌封体(5)局部地直接与所述包覆部(2)和所述连接层(3)邻接。
13.根据上述权利要求中任一项所述的半导体激光器器件,
所述半导体激光器器件没有载体(4),其中第二接触部位(43b)在所述半导体芯片(1)的所述底面(1b)上构成。
14.一种用于制造根据上述权利要求中任一项所述的半导体激光器(1)的方法,所述方法具有如下步骤:
-将所述半导体芯片(1)施加到所述载体(4)上。
-用所述包覆部(2)包覆所述半导体芯片(1),其中仅仅所述半导体芯片(1)的所述底面(1b)保持没有所述包覆部,
-使所述半导体芯片(1)的所述覆盖面(1a)局部地露出,
-将所述连接层(3)施加在所述包覆部(2)的背离所述载体(4)的上侧和所述半导体芯片(1)的覆盖面(1a)上。
15.根据上一项权利要求所述的方法,
其中剥离所述载体(4)。
16.根据上两项权利要求中任一项所述的方法,
其中制造根据权利要求1至13中任一项所述的半导体激光器器件。
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