CN110518124A - Using ternary quaternary oxide as the perovskite solar battery and preparation method of electron transfer layer - Google Patents

Using ternary quaternary oxide as the perovskite solar battery and preparation method of electron transfer layer Download PDF

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CN110518124A
CN110518124A CN201910680391.9A CN201910680391A CN110518124A CN 110518124 A CN110518124 A CN 110518124A CN 201910680391 A CN201910680391 A CN 201910680391A CN 110518124 A CN110518124 A CN 110518124A
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oxide
electron transfer
layer
zinc
perovskite
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常晶晶
赵鹏
林珍华
苏杰
张进成
郝跃
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Xidian Univ
Xian University of Electronic Science and Technology
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Xian University of Electronic Science and Technology
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/42Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for sensing infra-red radiation, light, electro-magnetic radiation of shorter wavelength or corpuscular radiation and adapted for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation using organic materials as the active part, or using a combination of organic materials with other material as the active part; Multistep processes for their manufacture
    • H01L51/4213Comprising organic semiconductor-inorganic semiconductor hetero-junctions
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/42Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for sensing infra-red radiation, light, electro-magnetic radiation of shorter wavelength or corpuscular radiation and adapted for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation using organic materials as the active part, or using a combination of organic materials with other material as the active part; Multistep processes for their manufacture
    • H01L51/4213Comprising organic semiconductor-inorganic semiconductor hetero-junctions
    • H01L51/422Majority carrier devices using sensitisation of widebandgap semiconductors, e.g. TiO2
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2251/00Indexing scheme relating to organic semiconductor devices covered by group H01L51/00
    • H01L2251/30Materials
    • H01L2251/301Inorganic materials
    • H01L2251/303Oxides, e.g. metal oxides
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention discloses a kind of using ternary quaternary oxide as the perovskite solar battery and preparation method of electron transfer layer, the mobility for mainly solving prior art electron transfer layer is low, the problem of film compactness and poorly conductive successively includes transparent conductive substrate (1), electron transfer layer (2), perovskite absorbed layer (3), hole transmission layer (4) and metal electrode (5) from below to up.The ternary quaternary oxide is using any one in indium-zinc oxide, indium gallium oxide, zinc tin oxide, zinc zirconium oxide, hafnium indium-zinc oxide, indium gallium zinc oxide, zirconium indium-zinc oxide, indium zinc tin oxide, aluminium zinc tin oxide, gallium zinc tin oxide, zirconium zinc tin oxide.The present invention is due to the electron transfer layer using ternary quaternary oxide, improve the mobility of electron transfer layer, compactness, electric conductivity and the surface energy for improving film, improve incident photon-to-electron conversion efficiency and repeatability, can be used for the photoelectric conversion of perovskite solar battery.

Description

Using ternary quaternary oxide as the perovskite solar battery of electron transfer layer and preparation Method
Technical field
The invention belongs to technical field of semiconductor device, further relate to a kind of preparation side of solar battery Method can be used for the photoelectric conversion of perovskite solar battery.
Background technique
Energy problem has been a urgent problem to be solved of the world today, and limited fossil energy is no longer satisfied The increasingly increased energy demand of people, energy problem have been to be concerned by more and more people, and the unreasonable energy, which uses, not only to be influenced The production and living of the mankind will also result in the pollution of environment.In view of the situation, such as wind energy, tide energy, bioenergy and the sun Can clean energy resource more and more attention has been paid to.Compared to traditional silica-based solar cell, under perovskite solar battery is used as Generation novel photovoltaic device causes extensive concern, and structure includes transparent conductive substrate, electron transfer layer, perovskite absorption Layer, hole transmission layer, metal electrode.Since it is with excellent absorbing properties, high carrier mobility, long carrier Service life and diffusion length, so that perovskite material is suitable for solar cell device.Cryogenic fluid preparation simultaneously, cheap original Material accelerates the commercialized process of solar battery.
Nanjing Univ. of Posts and Telecommunications its application patent document " a kind of perovskite solar battery " (application number: 201710213690.2 application publication numbers: 107068867 A of CN) in disclose a kind of side for preparing perovskite solar battery Method.This method, as transparent conductive substrate, prepares poly- 3,4-rthylene dioxythiophene/polystyrene sulphur using spin-coating method using ITO Hydrochlorate (PEDOT:PSS) and rubrene mixing material prepare perovskite using one-step method or two-step method as hole transmission layer Absorbed layer prepares metal electrode using vapour deposition method using spin-coating method preparation PCBM film as electron transfer layer.But this method The electron transfer layer mobility prepared using PCBM material is low, and stability is poor, while forbidden bandwidth is non-adjustable, limits perovskite The performance of solar battery.
Summary of the invention
It is an object of the invention to be directed to above-mentioned existing deficiency, propose one kind using ternary quaternary oxide as electron-transport The perovskite solar battery and preparation method of layer improve the densification of electron transfer layer to improve the mobility of electron transfer layer Property, electric conductivity and surface can, improve incident photon-to-electron conversion efficiency and repeatability.
To achieve the above object, the present invention using ternary quaternary oxide as the perovskite solar battery of electron transfer layer from It is lower and upper including transparent conductive substrate 1, electron transfer layer 2, perovskite light-absorption layer 3, hole transmission layer 4 and metal electrode 5, it is special Sign is that electron transfer layer uses ternary quaternary oxide, for improving the mobility of electron transfer layer, improves electron transfer layer Compactness, electric conductivity and surface can, improve incident photon-to-electron conversion efficiency and repeatability.
The ternary quaternary oxide is indium-zinc oxide, indium gallium oxide, zinc tin oxide, zinc zirconium oxide, hafnium indium Zinc oxide, indium gallium zinc oxide, zirconium indium-zinc oxide, indium zinc tin oxide, aluminium zinc tin oxide, gallium zinc tin oxide, zirconium One of zinc tin oxide.
To achieve the above object, the present invention is using ternary quaternary oxide as the perovskite solar battery of electron transfer layer Production method, which comprises the steps of:
1) perovskite solar battery transparent conductive substrates are pre-processed:
Transparent conductive substrates are gradually used into glass cleaning solution, deionized water, acetone, 50 degrees Celsius of aqueous isopropanol Ultrasonic cleaning, then the transparent conductive substrates use being cleaned by ultrasonic is dried with nitrogen glass surface, and using at UV ozone Glass surface is managed, the substrate after pre- place manages well is obtained;
2) ternary quaternary Oxide Electron transport layer is prepared:
Any one in ternary quaternary oxide is produced in the transparent conductive substrates pre-processed, obtains three First quaternary Oxide Electron transport layer;
3) perovskite absorbed layer is prepared:
Using solution coating method, by perovskite solution A BXmY3-mIt is coated on the electron transfer layer prepared, and to spin coating Device afterwards is made annealing treatment, the perovskite absorbed layer prepared;
4) hole transmission layer is prepared:
Using spin-coating method, hole transmission layer precursor solution is spun on the perovskite absorbed layer prepared, is made The hole transmission layer got ready;
5) top-level metallic electrode is prepared:
Using vacuum coater, on the hole transport layer by metal electrode vapor deposition, the metal electrode prepared is completed The preparation of perovskite solar battery.
Compared with prior art, invention is due to using ternary quaternary oxide as perovskite solar battery Electron transfer layer, have the advantages that
First, the mobility of electron transfer layer is improved, the transmission of carrier is promoted, reduces the compound of carrier, Improve perovskite solar cell photoelectric transformation efficiency.
Second, compared to binary oxide, the energy level of electron transfer layer is more matched, and electric charge transfer is more effective, improves calcium The incident photon-to-electron conversion efficiency and stability of titanium ore solar battery.
Detailed description of the invention
Fig. 1 is the structure chart of perovskite solar battery of the present invention.
Fig. 2 is the preparation flow figure of perovskite solar battery of the present invention.
Specific embodiment
Present invention will be described in further detail below with reference to the accompanying drawings.
Referring to Fig.1, the structure of perovskite solar battery of the present invention, including transparent conductive substrate 1, electron transfer layer 2, calcium Titanium ore light-absorption layer 3, hole transmission layer 4 and metal electrode 5.Wherein:
The transparent conductive substrate 1 is using the ITO material with a thickness of 300-800nm;
The electron transfer layer 2 is located in transparent conductive substrate 1, uses the ternary quaternary oxidation with a thickness of 70-350nm Object improves compactness, electric conductivity and the surface energy of electron transfer layer, improves photoelectricity for improving the mobility of electron transfer layer Transformation efficiency and repeatability, the ternary quaternary oxide are indium-zinc oxide, indium gallium oxide, zinc tin oxide, zinc zirconium oxygen Compound, hafnium indium-zinc oxide, indium gallium zinc oxide, zirconium indium-zinc oxide, indium zinc tin oxide, aluminium zinc tin oxide, gallium zinc-tin Any one in oxide, zirconium zinc tin oxide;
The perovskite light-absorption layer 3 is located on electron transfer layer 2, the perovskite ABX usedmY3-mBy cation A, sun Ion B, anion X and anion Y composition, wherein one or more of A MA, FA, Rb or Cs, in B Pb, Sn or Ge One or more, X, Y Cl, Br or I, m 1-3, with a thickness of 150-550nm.
The hole transmission layer 4 is located on perovskite light-absorption layer 3, use Spiro-OMeTAD, triphenylamine derivative, PEDOTPSS, PTAA, P3HT, CuSCN, NiO and Cu2Any one in O, with a thickness of 50-500nm.
The metal electrode 5 is located on hole transmission layer 4, uses golden Au, silver Ag, copper Cu, any one in carbon electrode Kind, with a thickness of 90-300nm.
Referring to Fig. 2, the present invention is prepared using ternary quaternary oxide as the side of the perovskite solar battery of electron transfer layer Method provides following three embodiment.
Embodiment 1: preparation transparent conductive substrate uses tin indium oxide ITO, and electron transfer layer uses indium-zinc oxide, calcium titanium Mine light absorbing layer uses MAPbI3, hole transmission layer is using Spiro-OMeTAD, the perovskite of top-level metallic electrode use silver Ag Solar battery
Step 1 pre-processes transparent conductive substrates.
The transparent conductive substrates of 400nm thickness are gradually used into glass cleaning solution, deionized water, acetone, aqueous isopropanol 50 degrees Celsius of ultrasonic cleaning, the time of every kind of ultrasonic cleaning is 20min.
The transparent conductive substrates use being cleaned by ultrasonic is dried with nitrogen glass surface and handles glass using UV ozone Glass surface 15 minutes obtains pretreated transparent conductive substrates.
Step 2 prepares the indium-zinc oxide electron transfer layer of perovskite solar battery.
Using magnetron sputtering apparatus, the In for being 9mg by weight2O3It is placed on specimen holder with weight for the ZnO of 1mg, then Transparent conductive substrates of the pretreatment after good are placed on sample stage, adjustment the distance between specimen holder and sample stage are Chamber vacuum is evacuated to 10 by 12cm-6Pa hereinafter, keep underlayer temperature be 60 degrees Celsius, be passed through 99.5% Ar and 0.5% O2 Mixed gas, by In2O3With ZnO with 1.9W/cm2Power be splashed to pretreated transparent conductive substrates, obtain The indium-zinc oxide film of 150nm thickness.
Step 3 prepares the perovskite absorbed layer of perovskite solar battery.
3.1) it prepares perovskite precursor solution: preparing mixed solvent according to the volume ratio of DMSO:GBL=3:7, and carry out light It shakes and is allowed to be sufficiently mixed, then the methylpyridinium iodide ammonium MAI of 215mg is taken to be dissolved in above-mentioned 1mL in the mixed solvent, obtain methylpyridinium iodide ammonium MAI solution adds the lead iodide PbI of 640mg in the solution2It is mixed, and straight in 75 DEG C of at a temperature of heating stirring To being completely dissolved, MAPbI is obtained3Solution;
3.2) by configured MAPbI3Solution is placed in thermal station 60 DEG C of heating, using spin coating machine equipment, first with The revolving speed of 1000rpm is in the indium-zinc oxide film spin coating MAPbI prepared3Solution 20s, then with the revolving speed spin coating of 4000rpm 30s, and toluene is added dropwise when spin-coating time twice is 45s, anneal under 100 degrees Celsius 20min later, obtains 350nm thickness Perovskite absorbed layer.
Step 4 prepares hole transmission layer.
4.1) the Li-TFSI material for being 520mg/ml by concentration, concentration are the FK209 material and Spiro- of 100mg/ml OMeTAD and tBP material is added in the chlorobenzene of 1ml, obtains Spiro-OMeTAD solution, wherein the weight of Spiro-OMeTAD For 90mg, it be 29 μ L, tBP volumes is 29 μ L that the volume of Li-TFSI, which is 18 μ L, FK209 volumes,;
4.2) use spin coating machine equipment, with the revolving speed of 4000rpms on the perovskite absorbed layer prepared spin coating Spiro- OMeTAD solution 30s, obtains the hole transmission layer of 150nm thickness.
Step 5 prepares top-level metallic electrode.
It is 10 in Chamber vacuum degree condition-5Pa hereinafter, withRate, Ag vapor deposition is passed in the hole for preparing On defeated layer, obtain completing the preparation of perovskite solar battery with a thickness of 100nm metal electrode.
Embodiment 2: preparation transparent conductive substrate uses tin indium oxide ITO, and electron transfer layer uses indium gallium zinc oxide, calcium Titanium ore light absorbing layer uses MA1-yFAyPbI3, hole transmission layer is using PTAA, and the perovskite of top-level metallic electrode use silver Au is too Positive energy battery.
Step A pre-processes transparent conductive substrates.
The specific implementation of this step is identical as the step 1 of embodiment 1.
Step B prepares the indium gallium zinc oxide electron transfer layer of perovskite solar battery.
First take the acetylacetone,2,4-pentanedione gallium powder that weight is 0.05mg and the acetylacetone,2,4-pentanedione zinc powder that weight is 0.05mg molten respectively In the ethyl alcohol of 1ml, acetylacetone,2,4-pentanedione Gallium solution and acetylacetone,2,4-pentanedione zinc solution are obtained, then taking weight is the Indium Tris acetylacetonate of 0.05mg Powder is dissolved in 1ml tetrahydrofuran, obtains acetylacetone,2,4-pentanedione solution of indium;
Acetylacetone,2,4-pentanedione Gallium solution, acetylacetone,2,4-pentanedione zinc solution and acetylacetone,2,4-pentanedione solution of indium are sufficiently mixed again to obtain indium gallium zinc oxygen Compound solution, and with the revolving speed of 2500rpm in the transparent conductive substrates after pretreatment is good spin coating indium gallium zinc oxide solution 40s, then the 60min that anneals under 300 degree celsius temperatures, obtain the indium gallium zinc oxide film of 180nm thickness.
Step C prepares the perovskite absorbed layer of perovskite solar battery.
First by the PbI of 1.6M2It is dissolved in the DMF of 20 μ L, and is stirred 2 hours under 75 degrees Celsius, PbI is obtained2Presoma is molten Liquid, then by weight be 70mg MAI and weight be 30mg FAI be dissolved in the IPA of 1mL, additionally incorporate the DMF of 10 μ L, obtain MAI With the mixed solution of FAI;
Again use spin coating machine equipment, with the revolving speed of 2000rpm on the indium gallium zinc oxide film prepared spin coating PbI2 Precursor solution 40s, obtains PbI2Film;
Again with the revolving speed of 3500rpm in the PbI prepared2The mixed solution 40s of spin coating MAI and FAI on film;Exist later Anneal 10min under 100 degree celsius temperatures, obtains the perovskite absorbed layer of 450nm thickness.
Step D, prepares hole transmission layer.
The PTAA that weight is 2mg is dissolved in the toluene of 1ml, PTAA solution is obtained;Using spin coating machine equipment, with The revolving speed of 3000rpm spin coating PTAA solution 30s on the perovskite absorbed layer prepared, anneals under 90 degree celsius temperatures later 30min obtains the hole transmission layer of 160nm thickness.
Step E prepares top-level metallic electrode.
It is 10 in Chamber vacuum degree condition-5Pa hereinafter, withRate, Au vapor deposition is passed in the hole for preparing On defeated layer, obtain completing the preparation of perovskite solar battery with a thickness of 150nm metal electrode.
Embodiment 3: preparation transparent conductive substrate uses tin indium oxide ITO, and electron transfer layer uses indium gallium oxide, calcium titanium Mine light absorbing layer uses MA1-yFAyPbI3-xClx, hole transmission layer is using cuprous sulfocyanide CuSCN, and top-level metallic electrode is using Cu Perovskite solar battery
Step 1 pre-processes transparent conductive substrates.
The specific implementation of this step is identical as the step 1 of embodiment 1.
Step 2 prepares the indium gallium oxide electron transfer layer of perovskite solar battery.
Using magnetron sputtering apparatus, the In for being 8mg by weight2O3It is placed on specimen holder with weight for the GaO of 2mg, then Transparent conductive substrates of the pretreatment after good are placed on sample stage, adjustment the distance between specimen holder and sample stage are Chamber vacuum is evacuated to 10 by 12cm-6Pa hereinafter, keep underlayer temperature be 60 degrees Celsius, be passed through 99.5%Ar and 0.5%O2It is mixed Gas is closed, by In2O3With GaO with 1.9W/cm2Power be splashed to pretreatment it is good after transparent conductive substrates, obtain 170nm Thick indium gallium oxide film.
Step 3 prepares the perovskite absorbed layer of perovskite solar battery.
Firstly, by the PbI of 1.36M2With the PbCl of 0.24M220 μ L DMF are dissolved in, and are stirred 2 hours under 75 degrees Celsius, Obtain PbX2Precursor solution;Again by weight be 70mg MAI and weight be 30mg FAI be dissolved in the IPA of 1mL, additionally incorporate The DMF of 10 μ L, obtains the mixed solution of MAI and FAI;
Then, using spin coating machine equipment, with the revolving speed of 3000rpm on the indium gallium oxide film prepared spin coating PbX2 Precursor solution 45s, obtains PbX2Film;
Then, with the revolving speed of 3000rpm in the PbX prepared2The mixed solution 45s of spin coating MAI and FAI on film, it Anneal under 100 degree celsius temperatures 10min afterwards, obtains the perovskite absorbed layer of 440nm thickness.
Step 4 prepares hole transmission layer.
The CuSCN material that concentration is 99% is dissolved in the diethyl thioether that concentration is 98%, constant temperature stirs at room temperature It mixes 30 minutes, obtains CuSCN solution, wherein the weight of CuSCN is 35mg, and diethyl thioether volume is 1mL;
Again use spin coating machine equipment, with the revolving speed of 5000rpm on the perovskite absorbed layer prepared 35 μ L of spin coating CuSCN solution 30s, obtains the hole transmission layer of 200nm thickness.
Step 5 prepares top-level metallic electrode.
It is 10 in Chamber vacuum degree condition-5Pa hereinafter, withRate, Cu vapor deposition is passed in the hole for preparing On defeated layer, obtain completing the preparation of perovskite solar battery with a thickness of 110nm metal electrode.
Above description is only three specific examples of the invention, does not constitute any limitation of the invention, it is clear that for It, all may be without departing substantially from the principle of the invention, structure after having understood the principle of the content of present invention for one of skill in the art In the case where, various modifications and change in form and details are carried out, in addition to material used in above three embodiments, ternary Quaternary oxide further include zinc tin oxide, zinc zirconium oxide, hafnium indium-zinc oxide, zirconium indium-zinc oxide, indium zinc tin oxide, Aluminium zinc tin oxide, gallium zinc tin oxide, zirconium zinc tin oxide;Perovskite solution A BXmY3-mFurther include A be Rb or Cs in one Kind is several, and B is one or more of Sn or Ge, X, Y Br, m 1-3;Hole transmission layer further include triphenylamine derivative, PEDOTPSS, P3HT, NiO and Cu2O;Metal electrode includes carbon, but these modifications and variations based on thought of the invention are still Within the scope of the claims of the present invention.

Claims (10)

1. it is a kind of using ternary quaternary oxide as the perovskite solar battery of electron transfer layer, it from bottom to top include electrically conducting transparent Substrate (1), electron transfer layer (2), perovskite light-absorption layer (3), hole transmission layer (4) and metal electrode (5), which is characterized in that Electron transfer layer improves the densification of electron transfer layer for improving the mobility of electron transfer layer using ternary quaternary oxide Property, electric conductivity and surface can, improve incident photon-to-electron conversion efficiency and repeatability;
The ternary quaternary oxide is indium-zinc oxide, indium gallium oxide, zinc tin oxide, zinc zirconium oxide, hafnium indium zinc oxygen Compound, indium gallium zinc oxide, zirconium indium-zinc oxide, indium zinc tin oxide, aluminium zinc tin oxide, gallium zinc tin oxide, zirconium zinc-tin Any one in oxide.
2. solar battery according to claim 1, which is characterized in that transparent conductive substrate (1) uses tin indium oxide ITO Material.
3. solar battery according to claim 1, it is characterised in that:
Transparent conductive substrate (1) with a thickness of 300-800nm;
Electron transfer layer (2) with a thickness of 70-350nm;
Perovskite light-absorption layer (3) with a thickness of 150-550nm.
4. solar battery according to claim 1, it is characterised in that:
Hole transmission layer (4) with a thickness of 50-500nm;
Metal electrode (5) with a thickness of 90-300nm.
5. a kind of using ternary quaternary oxide as the perovskite preparation method of solar battery of electron transfer layer, which is characterized in that Include the following:
1) by transparent conductive substrates gradually use glass cleaning solution, deionized water, acetone, 50 degrees Celsius of aqueous isopropanol it is super Sound cleaning, then the transparent conductive substrates use being cleaned by ultrasonic is dried with nitrogen glass surface, and handle using UV ozone Glass surface obtains the substrate after pre- place manages well;
2) ternary quaternary oxide is produced in the transparent conductive substrates pre-processed, obtains ternary quaternary oxide electricity Sub- transport layer;
3) use solution coating method by perovskite solution A BXmY3-mBe coated on the electron transfer layer prepared, and to spin coating after Device is made annealing treatment, the perovskite absorbed layer prepared;
4) hole transmission layer precursor solution is spun on the perovskite absorbed layer prepared using spin-coating method, is prepared Hole transmission layer;
5) metal electrode of perovskite solar battery is deposited on the hole transport layer using vacuum coater, completes perovskite too The preparation of positive energy battery.
6. according to the method described in claim 5, it is characterized in that, the preparation method of ternary quaternary oxide uses in step 2) Magnetron sputtering method, solwution method, atomic layer deposition method, any one in chemical vapour deposition technique.
7. according to the method described in claim 5, it is characterized in that, solution coating method in step 3), is referred to and is revolved using a step Coating, two step spin-coating methods, any one in knife coating.
8. according to the method described in claim 5, it is characterized in that, perovskite solution A BX in step 3)mY3-mBy cation A, Cationic B, anion X and anion Y composition, wherein one or more of A MA, FA, Rb or Cs, B Pb, Sn or Ge One or more of, X, Y Cl, Br or I, m 1-3.
9. according to the method described in claim 5, it is characterized in that, hole transmission layer described in step 4) is Spiro- OMeTAD, triphenylamine derivative, PEDOTPSS, PTAA, P3HT, CuSCN, NiO and Cu2Any one in O.
10. according to the method described in claim 5, it is characterized in that, the metal electrode in step 5) is using Au, Ag, Cu, carbon electricity Any one in extremely.
CN201910680391.9A 2019-07-26 2019-07-26 Using ternary quaternary oxide as the perovskite solar battery and preparation method of electron transfer layer Pending CN110518124A (en)

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Citations (2)

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Publication number Priority date Publication date Assignee Title
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CN105304819A (en) * 2015-11-24 2016-02-03 杨秋香 Solar cell containing perovskite material and preparation method thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105280822A (en) * 2015-11-24 2016-01-27 杨秋香 Low-cost solar cell suitable for production
CN105304819A (en) * 2015-11-24 2016-02-03 杨秋香 Solar cell containing perovskite material and preparation method thereof

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
H.ARORA: "Amorphous indium-gallium-zinc-oxide as electron transport layer in organic photodetectors", 《APPLIED PHYSICS LETTERS》 *
LIANG WANG: "Indium Zinc Oxide Electron Transport Layer for High-Performance Planar Perovskite Solar Cells", 《THE JOURNAL OF PHYSICAL CHEMISTRY》 *

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