CN110483034A - 一种高介电常数np0型介质陶瓷 - Google Patents
一种高介电常数np0型介质陶瓷 Download PDFInfo
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- CN110483034A CN110483034A CN201910878341.1A CN201910878341A CN110483034A CN 110483034 A CN110483034 A CN 110483034A CN 201910878341 A CN201910878341 A CN 201910878341A CN 110483034 A CN110483034 A CN 110483034A
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- 239000000919 ceramic Substances 0.000 title claims abstract description 48
- 238000005245 sintering Methods 0.000 claims abstract description 27
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 23
- 230000000996 additive effect Effects 0.000 claims abstract description 17
- 239000000654 additive Substances 0.000 claims abstract description 16
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 claims abstract description 16
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 10
- WEUCVIBPSSMHJG-UHFFFAOYSA-N calcium titanate Chemical compound [O-2].[O-2].[O-2].[Ca+2].[Ti+4] WEUCVIBPSSMHJG-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 10
- 239000011777 magnesium Substances 0.000 claims abstract description 10
- 229910017676 MgTiO3 Inorganic materials 0.000 claims abstract 2
- 238000000498 ball milling Methods 0.000 claims description 26
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 25
- 239000011812 mixed powder Substances 0.000 claims description 18
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 16
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 16
- 239000008367 deionised water Substances 0.000 claims description 15
- 229910021641 deionized water Inorganic materials 0.000 claims description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- 239000002994 raw material Substances 0.000 claims description 12
- 229910000416 bismuth oxide Inorganic materials 0.000 claims description 10
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims description 10
- 238000001354 calcination Methods 0.000 claims description 8
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical group [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 8
- 239000000843 powder Substances 0.000 claims description 8
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 7
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims description 4
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 4
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 229910052593 corundum Inorganic materials 0.000 claims 1
- 229910001845 yogo sapphire Inorganic materials 0.000 claims 1
- 238000000227 grinding Methods 0.000 description 10
- 239000004408 titanium dioxide Substances 0.000 description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 8
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 7
- 239000003985 ceramic capacitor Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- SXSVTGQIXJXKJR-UHFFFAOYSA-N [Mg].[Ti] Chemical compound [Mg].[Ti] SXSVTGQIXJXKJR-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- 239000010955 niobium Substances 0.000 description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 3
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 2
- 239000000292 calcium oxide Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002365 multiple layer Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 230000001699 photocatalysis Effects 0.000 description 2
- 229910052573 porcelain Inorganic materials 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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Abstract
本发明公开了一种高介电常数NP0型介质陶瓷;一种高介电常数NP0型介质陶瓷包括偏钛酸镁(MgTiO3) 5‑250份、钛酸钙(CaTiO3) 5‑150份、二氧化钛(TiO2) 5‑100份、三氧化二钕(Nd2O3) 5‑350份、改性添加剂5‑200份和烧结助剂50‑120份;本发明具有非常稳定温度系数、烧结温度低、介电常数高、介电损耗小等优点。
Description
技术领域
本发明涉及陶瓷组合物技术领域,更具体地说,它涉及一种高介电常数NP0型介质陶瓷。
背景技术
电容器中的介质材料按容量的温度稳定性可以划分为两类,即Ⅰ类陶瓷电容器和Ⅱ类陶瓷电容器,在这之中X5R、X7R、X8R、Y5V和Z5U等属于Ⅱ类陶瓷,Ⅱ类陶瓷电容器的介电常数一般大于1000,其电气性能比较稳定,适用于隔直、耦合、旁路及对可靠性要求较高的中、低频场合,以及对容量稳定性和损耗要求不高的场合;相对于前述而言,NP0属于Ⅰ类陶瓷,具有温度补偿特性,Ⅰ类陶瓷电容器的介电常数一般小于100,其电容量性能稳定,基本上不随温度、电压、时间的变化而改变,属于超稳定、低损耗、低寄生电感的电容器介质材料,常用于对稳定性、可靠性要求较高的高频、甚至超高频的场合。
在一些聚集较多本目光的材料系统中,镁钛锌系统(MgO-TiO2-ZnO系统)是以MgO、TiO2、ZnO等为原料而合成;MgO-TiO2-ZnO系统为基础研制的陶瓷介质材料具有非常理想的高频性能,并且能够通过改变适当成分的配比,可以有效的减小介质材料的介电损耗。
但是,该系统的容温系数为正数,需要容温系数为负数的补偿剂,从而该体系烧结温度过高,故有待改善。
发明内容
针对现有技术存在的不足,本发明的目的在于提供一种高介电常数NP0型介质陶瓷,其具有烧结温度低的优点。
为实现上述个目的,本发明提供了如下技术方案:一种高介电常数NP0型介质陶瓷,所述NP0型介质陶瓷包括以下重量份的原料制成:偏钛酸镁(MgTiO3)5-250份、钛酸钙(CaTiO3)5-150份、二氧化钛(TiO2)5-100份、三氧化二钕(Nd2O3)5-350份和烧结助剂50-120份。
通过采用上述技术方案,由于采用偏钛酸镁(MgTiO3)、钛酸钙(CaTiO3)、二氧化钛(TiO2)、三氧化二钕(Nd2O3)和烧结助剂,形成多元系介电陶瓷制备高介电常数常数之NP0介电材料,此体系有非常稳定的温度系数、烧结温度低、介电常数高、介电损耗小等优点,同时可采用低钯含量的银钯浆料作为内电极,可应用于多层片式陶瓷电容器的制备,并大大降低了生产成本。
进一步地,所述烧结助剂为氧化铋(Bi2O3)、氧化硼(B2O3)和氧化铝(Al2O3)中的至少一种。
通过采用上述技术方案,通过烧结助剂的可对烧结温度进行降低,减轻了制作高介电常数NP0型介质陶瓷的难度。
进一步地,所述NP0型介质陶瓷的原料还包括改性添加剂5-200份。
通过采用上述技术方案,通过添加改性添加剂可提高NP0型介质陶瓷的化学稳定性、高的电子注入效率和相对较高的光催化活性等,改变了其物理、化学性质。
进一步地,所述改性添加剂为五氧化二铌(Nb2O5)、二氧化锆(ZrO2)和氧化钙(CaO)中的至少一种。
通过采用上述技术方案,改性添加剂为五氧化二铌、二氧化锆和氧化钙中的一种可对NP0型介质陶瓷,进一步的降低其烧结温度。
进一步地,所述NP0型介质陶瓷还包括在上述混合后的粉料内加入研磨球和球磨介质。
通过采用上述技术方案,通过在混合粉料内加入研磨球和球磨介质,更好的对混合粉料进行研磨,提高其研磨效率和质量。
进一步地,所述混合后的粉料、研磨球与球磨介质的质量比为1∶1∶2的比例。
通过采用上述技术方案,通过较佳的配比,在使用较少的材料达成较好的混料研磨效果。
进一步地,所述研磨球为氧化锆陶瓷球。
通过采用上述技术方案,氧化锆陶瓷球在常温下具有高的强度和高韧性、耐磨性好、耐高温耐腐蚀、刚度高、不导磁、电绝缘,钇稳定TZP氧化锆陶瓷微珠比重是普通氧化锆珠的1.6倍,同等条件下具有更高的研磨效率;进一步的提高了研磨效率。
进一步地,所述球磨介质为去离子水。
通过采用上述技术方案,通过去离子水作为球磨介质,可减轻混合后的物料与其余球磨介质发生反应,同时提高混合粉料的研磨效果。
进一步地,所述混合后的粉料、研磨球与去离子水在进行球磨和煅烧处理后加入质量百分比为2%的聚乙烯醇(PVA)。
通过采用上述技术方案,通过向经过研磨煅烧步骤后的混合粉料内加入质量百分比为2%的聚乙烯醇(PVA),提高其成膜性,并增加了混合粉料的粘性,便于后期工序中的压制成型的成功率。
综上所述,本发明具有以下有益效果:
第一、由于本发明采用偏钛酸镁、钛酸钙、二氧化钛、三氧化二钕和烧结助剂,形成多元系介电陶瓷制备高介电常数常数之NP0介电材料,此体系有非常稳定的温度系数、烧结温度低、介电常数高、介电损耗小等优点,同时可采用低钯含量的银钯浆料作为内电极,可应用于多层片式陶瓷电容器的制备,并大大降低了生产成本;
第二、本发明中优选采用改性添加剂;可提高NP0型介质陶瓷的化学稳定性、高的电子注入效率和相对较高的光催化活性等,改变了其物理、化学性质。
具体实施方式
以下结合实施例对本发明作进一步详细说明。
实施例
实施例1:
一种高介电常数NP0型介质陶瓷,包括以下重量份的原料制成:5g的偏钛酸镁(MgTiO3)、5g的钛酸钙(CaTiO3)、5g的二氧化钛(TiO2)、5g的三氧化二钕(Nd2O3)、50g的烧结助剂和5g的改性添加剂,烧结助剂优选为氧化硼(B2O3),改性添加剂优选为二氧化锆(ZrO2)。
在上述混合后的粉料内加入研磨球和球磨介质,其中混合后的粉料、研磨球与球磨介质的质量比为1∶1∶2的比例,研磨球为氧化锆陶瓷球,球磨介质为去离子水;混合后的粉料、研磨球与去离子水在进行球磨和煅烧处理后加入质量百分比为2%的聚乙烯醇(PVA)。
实施例2:
一种高介电常数NP0型介质陶瓷,包括以下重量份的原料制成:100g的偏钛酸镁(MgTiO3)、60g的钛酸钙(CaTiO3)、30g的二氧化钛(TiO2)、120g的三氧化二钕(Nd2O3)、60g的烧结助剂和60g的改性添加剂,烧结助剂优选为氧化铋(Bi2O3),改性添加剂优选为五氧化二铌(Nb2O5)。
在上述混合后的粉料内加入研磨球和球磨介质,其中混合后的粉料、研磨球与球磨介质的质量比为1∶1∶2的比例,研磨球为氧化锆陶瓷球,球磨介质为去离子水;混合后的粉料、研磨球与去离子水在进行球磨和煅烧处理后加入质量百分比为2%的聚乙烯醇(PVA)。
实施例3:
一种高介电常数NP0型介质陶瓷,包括以下重量份的原料制成:120g的偏钛酸镁(MgTiO3)、80g的钛酸钙(CaTiO3)、50g的二氧化钛(TiO2)、180g的三氧化二钕(Nd2O3)、80g的烧结助剂和120g的改性添加剂,烧结助剂优选为氧化铋(Bi2O3),改性添加剂优选为五氧化二铌(Nb2O5)。
在上述混合后的粉料内加入研磨球和球磨介质,其中混合后的粉料、研磨球与球磨介质的质量比为1∶1∶2的比例,研磨球为氧化锆陶瓷球,球磨介质为去离子水;混合后的粉料、研磨球与去离子水在进行球磨和煅烧处理后加入质量百分比为2%的聚乙烯醇(PVA)。
实施例4:
一种高介电常数NP0型介质陶瓷,包括以下重量份的原料制成:220g的偏钛酸镁(MgTiO3)、140g的钛酸钙(CaTiO3)、50g的二氧化钛(TiO2)、320g的三氧化二钕(Nd2O3)、120g的烧结助剂和150g的改性添加剂,烧结助剂优选为氧化铋(Bi2O3),改性添加剂优选为五氧化二铌(Nb2O5)。
在上述混合后的粉料内加入研磨球和球磨介质,其中混合后的粉料、研磨球与球磨介质的质量比为1∶1∶2的比例,研磨球为氧化锆陶瓷球,球磨介质为去离子水;混合后的粉料、研磨球与去离子水在进行球磨和煅烧处理后加入质量百分比为2%的聚乙烯醇(PVA)。
实施例5:
一种高介电常数NP0型介质陶瓷,包括以下重量份的原料制成:250g的偏钛酸镁(MgTiO3)、150g的钛酸钙(CaTiO3)、100g的二氧化钛(TiO2)、350g的三氧化二钕(Nd2O3)、120g的烧结助剂和200g的改性添加剂,烧结助剂优选为氧化铝(Al2O3),改性添加剂优选为氧化钙(CaO)。
在上述混合后的粉料内加入研磨球和球磨介质,其中混合后的粉料、研磨球与球磨介质的质量比为1∶1∶2的比例,研磨球为氧化锆陶瓷球,球磨介质为去离子水;混合后的粉料、研磨球与去离子水在进行球磨和煅烧处理后加入质量百分比为2%的聚乙烯醇(PVA)。
对比例对比例以MgO、TiO2、ZnO等为原料而合成的镁钛锌系统(MgO-TiO2-ZnO系统)。
性能检测试验取由实施例1-5和对比例的配方制成的高介电常数NP0型介质陶瓷各5份,并按照以下方法检测高介电常数NP0型介质的各项性能,由同一实施例或对比例制得的芯板测试结果取平均值,测试结果如表1所示:
采用Tonghui TH2827C阻抗分析仪测试在1MHz下制品的高频介电性能;得出εr(相对介质常数)和TCC(电容温度系数)。
表1
从表1可以看出,按照实施例1-5配方制成的高介电常数NP0型介质陶瓷,相对介质常数在120-480,电容温度系数在-30*10-6-30*10-6/℃,烧结温度在1000-1040℃,烧结温度较小,便于高介电常数NP0型介质陶瓷的制备。
对比例以MgO、TiO2、ZnO等为原料而合成的镁钛锌系统(MgO-TiO2-ZnO系统),该系统的烧结温度较高,增大了高介电常数NP0型介质陶瓷的制备的难度。
本具体实施例仅仅是对本发明的解释,其并不是对本发明的限制,本领域技术人员在阅读完本说明书后可以根据需要对本实施例做出没有创造性贡献的修改,但只要在本发明的权利要求范围内都受到专利法的保护。
Claims (9)
1.一种高介电常数NP0型介质陶瓷,其特征在于,所述NP0型介质陶瓷包括以下重量份的原料制成:偏钛酸镁(MgTiO3) 5-250份、钛酸钙(CaTiO3) 5-150份、二氧化钛(TiO2) 5-100份、三氧化二钕(Nd2O3) 5-350份和烧结助剂50-120份。
2.根据权利要求1所述的一种高介电常数NP0型介质陶瓷,其特征在于,所述烧结助剂为氧化铋(Bi2O3)、氧化硼(B2O3)和氧化铝(Al2O3)中的至少一种。
3.根据权利要求1所述的一种高介电常数NP0型介质陶瓷,其特征在于,所述NP0型介质陶瓷的原料还包括改性添加剂5-200份。
4.根据权利要求3所述的一种高介电常数NP0型介质陶瓷,其特征在于,所述改性添加剂为五氧化二铌(Nb2O5)、二氧化锆(ZrO2)和氧化钙(CaO)中的至少一种。
5.根据权利要求1所述的一种高介电常数NP0型介质陶瓷,其特征在于,所述NP0型介质陶瓷还包括在上述混合后的粉料内加入研磨球和球磨介质。
6.根据权利要求5所述的一种高介电常数NP0型介质陶瓷,其特征在于,所述混合后的粉料、研磨球与球磨介质的质量比为1∶1∶2的比例。
7.根据权利要求6所述的一种高介电常数NP0型介质陶瓷,其特征在于,所述研磨球为氧化锆陶瓷球。
8.根据权利要求6所述的一种高介电常数NP0型介质陶瓷,其特征在于,所述球磨介质为去离子水。
9.根据权利要求6所述的一种高介电常数NP0型介质陶瓷,其特征在于,所述混合后的粉料、研磨球与去离子水在进行球磨和煅烧处理后加入质量百分比为2%的聚乙烯醇(PVA)。
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