CN110431441B - 用于调制的图像捕获的系统和方法 - Google Patents

用于调制的图像捕获的系统和方法 Download PDF

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Publication number
CN110431441B
CN110431441B CN201880019329.9A CN201880019329A CN110431441B CN 110431441 B CN110431441 B CN 110431441B CN 201880019329 A CN201880019329 A CN 201880019329A CN 110431441 B CN110431441 B CN 110431441B
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charge collection
voltage
modulation
collection node
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CN201880019329.9A
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Chinese (zh)
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CN110431441A (zh
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J·波伊科宁
A·帕西奥
M·莱希奥
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Kovilta Oy
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01SRADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/483Details of pulse systems
    • G01S7/486Receivers
    • G01S7/4861Circuits for detection, sampling, integration or read-out
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/803Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033Photosensitive area
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/18Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

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  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Optical Radar Systems And Details Thereof (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
CN201880019329.9A 2017-03-19 2018-03-16 用于调制的图像捕获的系统和方法 Expired - Fee Related CN110431441B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FI20170044 2017-03-19
FI20170044 2017-03-19
PCT/FI2018/050195 WO2018172610A1 (en) 2017-03-19 2018-03-16 Systems and methods for modulated image capture

Publications (2)

Publication Number Publication Date
CN110431441A CN110431441A (zh) 2019-11-08
CN110431441B true CN110431441B (zh) 2023-09-15

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US (1) US11411027B2 (https=)
EP (1) EP3602109B1 (https=)
JP (1) JP7149616B2 (https=)
KR (1) KR102484157B1 (https=)
CN (1) CN110431441B (https=)
SG (1) SG11201906657QA (https=)
WO (1) WO2018172610A1 (https=)

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JP2022002229A (ja) * 2018-09-05 2022-01-06 ソニーセミコンダクタソリューションズ株式会社 撮像装置、および撮像素子
JP6641442B1 (ja) * 2018-10-16 2020-02-05 浜松ホトニクス株式会社 光検出素子及び光検出装置
KR102704197B1 (ko) * 2019-12-12 2024-09-09 에스케이하이닉스 주식회사 이미지 센싱 장치
US20210257396A1 (en) * 2020-02-19 2021-08-19 Pointcloud Inc. Backside illumination architectures for integrated photonic lidar
CN111341797B (zh) * 2020-03-09 2022-10-28 宁波飞芯电子科技有限公司 光电转换元件及图像传感器
KR102883963B1 (ko) * 2021-01-12 2025-11-10 에스케이하이닉스 주식회사 이미지 센싱 장치
JP7566677B2 (ja) 2021-03-23 2024-10-15 株式会社東芝 光検出器
KR20230055605A (ko) * 2021-10-19 2023-04-26 에스케이하이닉스 주식회사 이미지 센싱 장치
US12289116B2 (en) 2021-11-15 2025-04-29 Samsung Electronics Co., Ltd. Analog-to-digital converting circuit using auto-zero period optimization and operation method thereof
KR20230116402A (ko) * 2022-01-28 2023-08-04 에스케이하이닉스 주식회사 이미지 센싱 장치
JP2023133816A (ja) * 2022-03-14 2023-09-27 ソニーセミコンダクタソリューションズ株式会社 測距装置

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CN105554418A (zh) * 2014-10-21 2016-05-04 英飞凌科技股份有限公司 成像装置和飞行时间成像方法
CN106471622A (zh) * 2014-12-22 2017-03-01 谷歌公司 具有第一和第二z 传输栅极的rgbz像素单元信元

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JPH0666446B2 (ja) 1984-03-29 1994-08-24 オリンパス光学工業株式会社 固体撮像素子
WO1985004987A1 (fr) 1984-04-25 1985-11-07 Josef Kemmer Detecteur de rayonnement semiconducteur a grande surface de faib le capacite
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JPS59107570A (ja) * 1982-12-13 1984-06-21 Fuji Photo Film Co Ltd 半導体撮像装置
CN105554418A (zh) * 2014-10-21 2016-05-04 英飞凌科技股份有限公司 成像装置和飞行时间成像方法
CN106471622A (zh) * 2014-12-22 2017-03-01 谷歌公司 具有第一和第二z 传输栅极的rgbz像素单元信元

Also Published As

Publication number Publication date
US20210134854A1 (en) 2021-05-06
KR102484157B1 (ko) 2023-01-03
CN110431441A (zh) 2019-11-08
KR20190127677A (ko) 2019-11-13
EP3602109B1 (en) 2021-01-20
WO2018172610A1 (en) 2018-09-27
JP7149616B2 (ja) 2022-10-07
EP3602109A1 (en) 2020-02-05
US11411027B2 (en) 2022-08-09
JP2020515085A (ja) 2020-05-21
SG11201906657QA (en) 2019-08-27

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