CN110431441B - 用于调制的图像捕获的系统和方法 - Google Patents
用于调制的图像捕获的系统和方法 Download PDFInfo
- Publication number
- CN110431441B CN110431441B CN201880019329.9A CN201880019329A CN110431441B CN 110431441 B CN110431441 B CN 110431441B CN 201880019329 A CN201880019329 A CN 201880019329A CN 110431441 B CN110431441 B CN 110431441B
- Authority
- CN
- China
- Prior art keywords
- node
- charge collection
- voltage
- modulation
- collection node
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/483—Details of pulse systems
- G01S7/486—Receivers
- G01S7/4861—Circuits for detection, sampling, integration or read-out
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8033—Photosensitive area
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
Landscapes
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Optical Radar Systems And Details Thereof (AREA)
- Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FI20170044 | 2017-03-19 | ||
| FI20170044 | 2017-03-19 | ||
| PCT/FI2018/050195 WO2018172610A1 (en) | 2017-03-19 | 2018-03-16 | Systems and methods for modulated image capture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110431441A CN110431441A (zh) | 2019-11-08 |
| CN110431441B true CN110431441B (zh) | 2023-09-15 |
Family
ID=61868528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201880019329.9A Expired - Fee Related CN110431441B (zh) | 2017-03-19 | 2018-03-16 | 用于调制的图像捕获的系统和方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US11411027B2 (https=) |
| EP (1) | EP3602109B1 (https=) |
| JP (1) | JP7149616B2 (https=) |
| KR (1) | KR102484157B1 (https=) |
| CN (1) | CN110431441B (https=) |
| SG (1) | SG11201906657QA (https=) |
| WO (1) | WO2018172610A1 (https=) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019027843A (ja) * | 2017-07-27 | 2019-02-21 | セイコーエプソン株式会社 | 回路装置、物理量測定装置、電子機器及び移動体 |
| JP2022002229A (ja) * | 2018-09-05 | 2022-01-06 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置、および撮像素子 |
| JP6641442B1 (ja) * | 2018-10-16 | 2020-02-05 | 浜松ホトニクス株式会社 | 光検出素子及び光検出装置 |
| KR102704197B1 (ko) * | 2019-12-12 | 2024-09-09 | 에스케이하이닉스 주식회사 | 이미지 센싱 장치 |
| US20210257396A1 (en) * | 2020-02-19 | 2021-08-19 | Pointcloud Inc. | Backside illumination architectures for integrated photonic lidar |
| CN111341797B (zh) * | 2020-03-09 | 2022-10-28 | 宁波飞芯电子科技有限公司 | 光电转换元件及图像传感器 |
| KR102883963B1 (ko) * | 2021-01-12 | 2025-11-10 | 에스케이하이닉스 주식회사 | 이미지 센싱 장치 |
| JP7566677B2 (ja) | 2021-03-23 | 2024-10-15 | 株式会社東芝 | 光検出器 |
| KR20230055605A (ko) * | 2021-10-19 | 2023-04-26 | 에스케이하이닉스 주식회사 | 이미지 센싱 장치 |
| US12289116B2 (en) | 2021-11-15 | 2025-04-29 | Samsung Electronics Co., Ltd. | Analog-to-digital converting circuit using auto-zero period optimization and operation method thereof |
| KR20230116402A (ko) * | 2022-01-28 | 2023-08-04 | 에스케이하이닉스 주식회사 | 이미지 센싱 장치 |
| JP2023133816A (ja) * | 2022-03-14 | 2023-09-27 | ソニーセミコンダクタソリューションズ株式会社 | 測距装置 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59107570A (ja) * | 1982-12-13 | 1984-06-21 | Fuji Photo Film Co Ltd | 半導体撮像装置 |
| CN105554418A (zh) * | 2014-10-21 | 2016-05-04 | 英飞凌科技股份有限公司 | 成像装置和飞行时间成像方法 |
| CN106471622A (zh) * | 2014-12-22 | 2017-03-01 | 谷歌公司 | 具有第一和第二z 传输栅极的rgbz像素单元信元 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55124259A (en) | 1979-03-19 | 1980-09-25 | Semiconductor Res Found | Semiconductor device |
| JPS58105672A (ja) | 1981-12-17 | 1983-06-23 | Fuji Photo Film Co Ltd | 半導体撮像装置 |
| JPH0666446B2 (ja) | 1984-03-29 | 1994-08-24 | オリンパス光学工業株式会社 | 固体撮像素子 |
| WO1985004987A1 (fr) | 1984-04-25 | 1985-11-07 | Josef Kemmer | Detecteur de rayonnement semiconducteur a grande surface de faib le capacite |
| JPS60229368A (ja) | 1984-04-27 | 1985-11-14 | Olympus Optical Co Ltd | 固体撮像装置 |
| US6380572B1 (en) | 1998-10-07 | 2002-04-30 | California Institute Of Technology | Silicon-on-insulator (SOI) active pixel sensors with the photosite implemented in the substrate |
| US6326230B1 (en) | 1999-01-06 | 2001-12-04 | California Institute Of Technology | High speed CMOS imager with motion artifact supression and anti-blooming |
| AU2001221481A1 (en) | 2000-10-16 | 2002-04-29 | Rudolf Schwarte | Method and device for detecting and processing signal waves |
| US6580496B2 (en) | 2000-11-09 | 2003-06-17 | Canesta, Inc. | Systems for CMOS-compatible three-dimensional image sensing using quantum efficiency modulation |
| JP4533582B2 (ja) | 2000-12-11 | 2010-09-01 | カネスタ インコーポレイテッド | 量子効率変調を用いたcmosコンパチブルの三次元イメージセンシングのためのシステム |
| US20090224351A1 (en) * | 2002-08-27 | 2009-09-10 | E-Phocus, Inc | CMOS sensor with approximately equal potential photodiodes |
| US7166878B2 (en) | 2003-11-04 | 2007-01-23 | Sarnoff Corporation | Image sensor with deep well region and method of fabricating the image sensor |
| US7361877B2 (en) | 2005-05-27 | 2008-04-22 | Eastman Kodak Company | Pinned-photodiode pixel with global shutter |
| US8050461B2 (en) | 2005-10-11 | 2011-11-01 | Primesense Ltd. | Depth-varying light fields for three dimensional sensing |
| CN101501442B (zh) | 2006-03-14 | 2014-03-19 | 普莱姆传感有限公司 | 三维传感的深度变化光场 |
| US7564022B1 (en) * | 2008-02-29 | 2009-07-21 | Caeleste Cvba | Method and device for time-gating the sensitivity of an imager structure |
| US8311374B2 (en) * | 2008-07-29 | 2012-11-13 | University Of Washington | Beam generation and steering with integrated optical circuits for light detection and ranging |
| US8953149B2 (en) * | 2009-02-17 | 2015-02-10 | Microsoft Corporation | CMOS three-dimensional image sensor detectors having reduced inter-gate capacitance, and enhanced modulation contrast |
| GB2474631A (en) | 2009-10-14 | 2011-04-27 | Optrima Nv | Photonic Mixer |
| DE102011079589A1 (de) | 2010-08-11 | 2012-02-16 | Samsung Electronics Co., Ltd. | Einheitspixel für ein Photodetektionsbauelement |
| JP5977366B2 (ja) | 2013-01-10 | 2016-08-24 | ソフトキネティック センサー エヌブイ | カラー不可視光センサ、例えば、irセンサ、すなわち、マルチスペクトルセンサ |
| EP2960952B1 (en) | 2014-06-27 | 2019-01-02 | Sony Depthsensing Solutions SA/NV | Majority carrier current assisted radiation detector device |
| DE102014113037B4 (de) | 2014-09-10 | 2018-02-08 | Infineon Technologies Ag | Bildgebende Schaltungen und ein Verfahren zum Betrieb einer bildgebenden Schaltung |
| US9780138B2 (en) | 2014-11-26 | 2017-10-03 | Caeleste Cvba | Three level transfer gate |
| EP3193190B1 (en) | 2016-01-15 | 2023-04-12 | Sony Depthsensing Solutions N.V. | A detector device with majority current and a circuitry for controlling the current |
-
2018
- 2018-03-16 SG SG11201906657QA patent/SG11201906657QA/en unknown
- 2018-03-16 KR KR1020197022403A patent/KR102484157B1/ko active Active
- 2018-03-16 CN CN201880019329.9A patent/CN110431441B/zh not_active Expired - Fee Related
- 2018-03-16 EP EP18715056.0A patent/EP3602109B1/en active Active
- 2018-03-16 WO PCT/FI2018/050195 patent/WO2018172610A1/en not_active Ceased
- 2018-03-16 JP JP2019571796A patent/JP7149616B2/ja active Active
- 2018-03-16 US US16/491,593 patent/US11411027B2/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59107570A (ja) * | 1982-12-13 | 1984-06-21 | Fuji Photo Film Co Ltd | 半導体撮像装置 |
| CN105554418A (zh) * | 2014-10-21 | 2016-05-04 | 英飞凌科技股份有限公司 | 成像装置和飞行时间成像方法 |
| CN106471622A (zh) * | 2014-12-22 | 2017-03-01 | 谷歌公司 | 具有第一和第二z 传输栅极的rgbz像素单元信元 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20210134854A1 (en) | 2021-05-06 |
| KR102484157B1 (ko) | 2023-01-03 |
| CN110431441A (zh) | 2019-11-08 |
| KR20190127677A (ko) | 2019-11-13 |
| EP3602109B1 (en) | 2021-01-20 |
| WO2018172610A1 (en) | 2018-09-27 |
| JP7149616B2 (ja) | 2022-10-07 |
| EP3602109A1 (en) | 2020-02-05 |
| US11411027B2 (en) | 2022-08-09 |
| JP2020515085A (ja) | 2020-05-21 |
| SG11201906657QA (en) | 2019-08-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: Turku Applicant after: KOVILTA OY Address before: Finland, Perth, hope Applicant before: KOVILTA OY |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20230915 |