CN110311015A - 晶硅太阳能电池的薄膜沉积方法 - Google Patents
晶硅太阳能电池的薄膜沉积方法 Download PDFInfo
- Publication number
- CN110311015A CN110311015A CN201910615043.3A CN201910615043A CN110311015A CN 110311015 A CN110311015 A CN 110311015A CN 201910615043 A CN201910615043 A CN 201910615043A CN 110311015 A CN110311015 A CN 110311015A
- Authority
- CN
- China
- Prior art keywords
- antireflective
- treated
- processed
- silicon wafer
- deposition method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 152
- 239000010703 silicon Substances 0.000 title claims abstract description 152
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 141
- 238000000151 deposition Methods 0.000 title claims abstract description 86
- 239000012528 membrane Substances 0.000 title claims abstract description 27
- 239000013078 crystal Substances 0.000 title claims abstract description 11
- 238000002161 passivation Methods 0.000 claims abstract description 76
- 238000000034 method Methods 0.000 claims abstract description 75
- 230000003667 anti-reflective effect Effects 0.000 claims abstract description 70
- 238000012545 processing Methods 0.000 claims abstract description 56
- 230000008569 process Effects 0.000 claims abstract description 44
- 238000011068 loading method Methods 0.000 claims abstract description 40
- 239000006117 anti-reflective coating Substances 0.000 claims abstract description 38
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 9
- 230000008021 deposition Effects 0.000 claims description 40
- 238000002955 isolation Methods 0.000 claims description 38
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 25
- 125000006850 spacer group Chemical group 0.000 claims description 21
- 238000005516 engineering process Methods 0.000 claims description 13
- 229910052757 nitrogen Inorganic materials 0.000 claims description 13
- 238000009792 diffusion process Methods 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 7
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 239000002131 composite material Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 230000005484 gravity Effects 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 4
- 229910003978 SiClx Inorganic materials 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 238000001816 cooling Methods 0.000 abstract description 7
- 230000007423 decrease Effects 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 description 33
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 28
- 229910002804 graphite Inorganic materials 0.000 description 28
- 239000010439 graphite Substances 0.000 description 28
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 22
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 17
- 229910052753 mercury Inorganic materials 0.000 description 17
- 239000007789 gas Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 14
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 12
- 238000004062 sedimentation Methods 0.000 description 12
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 11
- 229910021529 ammonia Inorganic materials 0.000 description 11
- 238000000576 coating method Methods 0.000 description 11
- 229910000077 silane Inorganic materials 0.000 description 11
- 239000011248 coating agent Substances 0.000 description 10
- 230000007306 turnover Effects 0.000 description 10
- 239000012495 reaction gas Substances 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- 230000008859 change Effects 0.000 description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 238000005137 deposition process Methods 0.000 description 5
- 235000008216 herbs Nutrition 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 210000002268 wool Anatomy 0.000 description 5
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 241000931526 Acer campestre Species 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910004286 SiNxOy Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 210000004209 hair Anatomy 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (14)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910615043.3A CN110311015B (zh) | 2019-07-09 | 2019-07-09 | 晶硅太阳能电池的薄膜沉积方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910615043.3A CN110311015B (zh) | 2019-07-09 | 2019-07-09 | 晶硅太阳能电池的薄膜沉积方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN110311015A true CN110311015A (zh) | 2019-10-08 |
CN110311015B CN110311015B (zh) | 2020-05-22 |
Family
ID=68079380
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910615043.3A Active CN110311015B (zh) | 2019-07-09 | 2019-07-09 | 晶硅太阳能电池的薄膜沉积方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN110311015B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112511125A (zh) * | 2020-09-23 | 2021-03-16 | 广东广纳芯科技有限公司 | 声表面波器件的制造方法 |
CN112795904A (zh) * | 2020-12-29 | 2021-05-14 | 理想晶延半导体设备(上海)股份有限公司 | 应用于管式设备的生产工艺 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150249164A1 (en) * | 2012-09-24 | 2015-09-03 | Optitune Oy | Method of forming functional coatings on silicon substrates |
CN105118801A (zh) * | 2015-09-25 | 2015-12-02 | 西安立芯光电科技有限公司 | 半导体芯片的表面处理系统 |
CN205122625U (zh) * | 2015-11-30 | 2016-03-30 | 新奥光伏能源有限公司 | 一种托盘组件和翻转设备 |
CN206015086U (zh) * | 2016-07-25 | 2017-03-15 | 苏州阿特斯阳光电力科技有限公司 | 一种适用于perc电池双面管式pecvd镀膜的石墨舟 |
CN107256898A (zh) * | 2017-05-18 | 2017-10-17 | 广东爱康太阳能科技有限公司 | 管式perc双面太阳能电池及其制备方法和专用设备 |
CN107946220A (zh) * | 2017-12-22 | 2018-04-20 | 君泰创新(北京)科技有限公司 | 电池片翻片装置 |
CN208767325U (zh) * | 2018-08-07 | 2019-04-19 | 南京仁厚科技有限公司 | 一种用于双面镀膜的载板 |
-
2019
- 2019-07-09 CN CN201910615043.3A patent/CN110311015B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150249164A1 (en) * | 2012-09-24 | 2015-09-03 | Optitune Oy | Method of forming functional coatings on silicon substrates |
CN105118801A (zh) * | 2015-09-25 | 2015-12-02 | 西安立芯光电科技有限公司 | 半导体芯片的表面处理系统 |
CN205122625U (zh) * | 2015-11-30 | 2016-03-30 | 新奥光伏能源有限公司 | 一种托盘组件和翻转设备 |
CN206015086U (zh) * | 2016-07-25 | 2017-03-15 | 苏州阿特斯阳光电力科技有限公司 | 一种适用于perc电池双面管式pecvd镀膜的石墨舟 |
CN107256898A (zh) * | 2017-05-18 | 2017-10-17 | 广东爱康太阳能科技有限公司 | 管式perc双面太阳能电池及其制备方法和专用设备 |
CN107946220A (zh) * | 2017-12-22 | 2018-04-20 | 君泰创新(北京)科技有限公司 | 电池片翻片装置 |
CN208767325U (zh) * | 2018-08-07 | 2019-04-19 | 南京仁厚科技有限公司 | 一种用于双面镀膜的载板 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112511125A (zh) * | 2020-09-23 | 2021-03-16 | 广东广纳芯科技有限公司 | 声表面波器件的制造方法 |
CN112511125B (zh) * | 2020-09-23 | 2024-01-26 | 广东广纳芯科技有限公司 | 声表面波器件的制造方法 |
CN112795904A (zh) * | 2020-12-29 | 2021-05-14 | 理想晶延半导体设备(上海)股份有限公司 | 应用于管式设备的生产工艺 |
Also Published As
Publication number | Publication date |
---|---|
CN110311015B (zh) | 2020-05-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN110299420A (zh) | 晶硅太阳能电池的减反射膜沉积方法 | |
US8148191B2 (en) | Combined etching and doping media | |
CN101409312B (zh) | 一种单晶硅片制绒的方法 | |
Kim et al. | Texturing of large area multi-crystalline silicon wafers through different chemical approaches for solar cell fabrication | |
CN107123702A (zh) | 背面抛光perc电池的制备方法 | |
JP2013503476A (ja) | 太陽電池およびこのような太陽電池の製造方法 | |
US20150040983A1 (en) | Acidic etching process for si wafers | |
CN110311015A (zh) | 晶硅太阳能电池的薄膜沉积方法 | |
CN102553813A (zh) | 一种在金属表面制备微纳米二氧化钛及其疏水薄膜的溶胶凝胶方法 | |
US20130089944A1 (en) | Solar cell silicon wafer process | |
CN103981575B (zh) | 一种单晶硅片的退火制绒方法 | |
CN105226114A (zh) | 一种黑硅钝化结构及其制备方法 | |
CN105355723A (zh) | 晶体硅太阳电池二氧化硅钝化膜的制备方法 | |
JP2012049156A (ja) | 太陽電池およびその製造方法 | |
CN102569531A (zh) | 一种多晶硅片的钝化处理方法 | |
KR101212896B1 (ko) | 태양전지용 다결정실리콘 웨이퍼의 표면 처리용 텍스쳐링제 및 처리방법 | |
CN115020546A (zh) | 双面钝化接触太阳电池及其制备方法 | |
CN110299421A (zh) | 介质膜沉积方法 | |
CN112599410B (zh) | 提高n型单晶硅片硼扩散的方法 | |
Ju et al. | A new vapor texturing method for multicrystalline silicon solar cell applications | |
CN108074999A (zh) | 一种选择性发射极黑硅电池及其制作方法 | |
CN106611696A (zh) | 一种碳化硅表面氧化膜的制备方法 | |
CN105244412B (zh) | 一种n型晶硅电池硼发射极的钝化方法 | |
CN111627804A (zh) | 一种利用掩膜保护的太阳能电池单面抛光工艺 | |
CN101504958A (zh) | 含有溅射沉积钝化层的光伏器件及其生产方法和生产设备 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP03 | Change of name, title or address |
Address after: Room 402, building 3, 3255 Sixian Road, Songjiang District, Shanghai, 201602 Patentee after: Ideal semiconductor equipment (Shanghai) Co.,Ltd. Address before: 201620 Shanghai city Songjiang District Sixian Road No. 3255 Building No. 3, B building four floor Patentee before: Shanghai (Ltd.) Company of Ideal Crystal Propagation Semiconductor Equipment |
|
CP03 | Change of name, title or address | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Thin film deposition method of crystalline silicon solar cells Effective date of registration: 20230209 Granted publication date: 20200522 Pledgee: Agricultural Bank of China Limited Shanghai Songjiang Sub-branch Pledgor: Ideal semiconductor equipment (Shanghai) Co.,Ltd. Registration number: Y2023310000023 |
|
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20230703 Address after: Division B1, No.300 Gushui Road, Haichang Street, Haining City, Jiaxing, Zhejiang Province 314499 Patentee after: Ideal Jingyan Semiconductor Equipment (Zhejiang) Co.,Ltd. Patentee after: Ideal semiconductor equipment (Shanghai) Co.,Ltd. Address before: 201602 room 402, building 3, 3255 Sixian Road, Songjiang District, Shanghai Patentee before: Ideal semiconductor equipment (Shanghai) Co.,Ltd. |
|
TR01 | Transfer of patent right |