CN110265440A - 显示面板及其制作方法 - Google Patents
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- 238000002360 preparation method Methods 0.000 title abstract 3
- 239000002184 metal Substances 0.000 claims abstract description 142
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 239000010410 layer Substances 0.000 claims description 143
- 239000010409 thin film Substances 0.000 claims description 61
- 239000011229 interlayer Substances 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 239000004973 liquid crystal related substance Substances 0.000 claims description 3
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- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133305—Flexible substrates, e.g. plastics, organic film
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- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- H10K77/111—Flexible substrates
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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Abstract
本申请提供了一种显示面板及其制作方法。所述显示面板包括:柔性衬底、薄膜晶体管层和发光结构。所述薄膜晶体管层具有至少一个金属连接区,所述至少一个金属连接区位于所述薄膜晶体管层与所述柔性衬底相邻的表面上,所述薄膜晶体管层中的金属走线通过通孔与所述至少一个金属连接区电连接。所述柔性衬底具有至少一个开口,所述至少一个开口与所述至少一个金属连接区对应设置,暴露出所述至少一个金属连接区。本申请提供的显示面板及其制作方法能够实现屏占比接近100%的全面屏。
Description
技术领域
本申请涉及电子显示领域,尤其涉及一种显示面板及其制作方法。
背景技术
现有的显示面板通常包括显示区和非显示区,所述非显示区设置在所述显示区周侧,用于设置与控制芯片连接的接口和连接电路。为了实现全面屏,需要不断的减小非显示区的面积。目前,常用的手段是采用柔性基板制备显示面板中的薄膜晶体管层。通过可弯折的柔性面板将非显示区弯折至显示面板背面,有效的缩小了非显示区的面积。然而这种方法不能完全消除非显示区的面积,无法实现真正的全面屏。
申请内容
本申请提供了一种显示面板及其制作方法,能够实现屏占比接近100%的全面屏。
为解决上述问题,本申请提供了一种显示面板,所述显示面板包括:
柔性衬底;
薄膜晶体管层,所述薄膜晶体管层位于所述柔性衬底的一侧表面上;
发光结构,所述发光结构位于所述薄膜晶体管层上,与所述薄膜晶体管层电连接;其中,
所述薄膜晶体管层具有至少一个金属连接区,所述至少一个金属连接区位于所述薄膜晶体管层与所述柔性衬底相邻的表面上,所述薄膜晶体管层中的金属走线通过通孔与所述至少一个金属连接区电连接;
所述柔性衬底具有至少一个开口,所述至少一个开口与所述至少一个金属连接区对应设置,暴露出所述至少一个金属连接区。
根据本申请的其中一个方面,所述显示面板还包括至少一个控制芯片,所述至少一个控制芯片位于所述柔性衬底背离所述薄膜晶体管层的表面上,通过所述至少一个金属连接区与所述薄膜晶体管层电连接。
根据本申请的其中一个方面,所述薄膜晶体管层包括:
缓冲层,所述缓冲层设置在所述柔性衬底上,覆盖所述至少一个金属连接区;
多个独立设置的有源区,每一个所述有源区包括沟道区和位于所述沟道区两侧的源漏区;
栅极介质层,所述栅极介质层覆盖所述多个有源区;
栅极金属层,所述栅极金属层位于所述栅极介质层上方,与所述多个有源区对应设置;
层间介质层,所述层间介质层覆盖所述多个有源区和栅极金属层;
源漏金属层,所述源漏金属层位于所述层间介质层上方。
根据本申请的其中一个方面,所述至少一个金属连接区包括第一金属连接区和第二金属连接区。
根据本申请的其中一个方面,所述栅极金属层通过第一通孔与所述第一金属连接区电连接。
根据本申请的其中一个方面,所述源漏金属层通过第二通孔与所述第二金属连接区电连接。
根据本申请的其中一个方面,所述显示面板还包括至少一个柔性电路板,每一个所述柔性电路板的一端连接所述金属连接区,另一端连接所述控制芯片。
根据本申请的其中一个方面,所述显示面板为液晶显示面板。
根据本申请的其中一个方面,所述显示面板为有机自发光二极管显示面板。
相应的,本发明还提供了一种显示面板的制作方法,该方法包括以下步骤:
提供柔性衬底;
形成薄膜晶体管层,所述薄膜晶体管层位于所述柔性衬底的一侧表面上,所述薄膜晶体管层具有至少一个金属连接区,所述至少一个金属连接区位于所述薄膜晶体管层与所述柔性衬底相邻的表面上,所述薄膜晶体管层中的金属走线通过通孔与所述至少一个金属连接区电连接;
形成发光结构,所述发光结构位于所述薄膜晶体管层上,与所述薄膜晶体管层电连接;
在所述柔性衬底上形成至少一个开口,所述至少一个开口与所述至少一个金属连接区对应设置,暴露出所述至少一个金属连接区;
提供控制芯片,所述至少一个控制芯片位于所述柔性衬底背离所述薄膜晶体管层的表面上,通过所述至少一个金属连接区与所述薄膜晶体管层电连接。
根据本申请的其中一个方面,所述至少一个金属连接区包括第一金属连接区和第二金属连接区。
根据本申请的其中一个方面,形成所述薄膜晶体管的方法包括:
形成至少一个金属连接区,所述至少一个金属连接区位于所述薄膜晶体管层与所述柔性衬底相邻的表面上;
形成缓冲层,所述缓冲层设置在所述柔性衬底上,覆盖所述至少一个金属连接区;
形成多个独立设置的有源区,每一个所述有源区包括沟道区和位于所述沟道区两侧的源漏区;
形成栅极介质层,所述栅极介质层覆盖所述多个有源区,所述栅极金属层通过第一通孔与所述第一金属连接区电连接;
形成栅极金属层,所述栅极金属层位于所述栅极介质层上方,与所述多个有源区对应设置;
形成层间介质层,所述层间介质层覆盖所述多个有源区和栅极金属层;
形成源漏金属层,所述源漏金属层位于所述层间介质层上方。所述源漏金属层通过第二通孔与所述第二金属连接区电连接。
本申请提供的显示面板采用柔性衬底,并且在薄膜晶体管层和柔性衬底之间设置了多个金属连接区,所述薄膜晶体管层中的金属走线通过通孔与所述多个金属连接区电连接。这样的设置,将显示面板与控制芯片连接的接口和连接电路设置在了柔性衬底背面,不占用显示面板出光面的面积,能够将非显示区的面积减小至0。因此,本申请能够实现屏占比接近于100%的全面屏。
附图说明
图1为本申请的一个具体实施例中的显示面板形成柔性衬底之后的结构示意图;
图2为本申请的一个具体实施例中的显示面板形成至少一个金属连接区之后的结构示意图;
图3为本申请的一个具体实施例中的显示面板形成栅极金属层之后的结构示意图;
图4为本申请的一个具体实施例中的显示面板形成平坦化层之后的结构示意图;
图5为本申请的一个具体实施例中的显示面板形成发光层之后的结构示意图;
图6为本申请的一个具体实施例中的显示面板的在柔性衬底上形成至少一开口之后的结构示意图;
图7为本申请的一个具体实施例中的显示面板与控制芯片连接之后的结构示意图。
具体实施方式
以下各实施例的说明是参考附加的图示,用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语,例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等,仅是参考附加图式的方向。因此,使用的方向用语是用以说明及理解本申请,而非用以限制本申请。在图中,结构相似的单元是用以相同标号表示。
为解决上述问题,本申请提供了一种显示面板。参见图2、图4和图7,图2为本申请的一个具体实施例中的显示面板形成至少一个金属连接区之后的结构示意图,图4为本申请的一个具体实施例中的显示面板形成平坦化层之后的结构示意图,图7为本申请的一个具体实施例中的显示面板与控制芯片连接之后的结构示意图。
本申请中,所述显示面板可以是液晶显示面板或有机自发光二极管显示面板,无论何种显示面板均可采用本发明的技术方案。在本实施例中,以有机自发光二极管显示面板为例进行说明。所述显示面板包括:柔性衬底200、薄膜晶体管层300和发光结构500。
所述薄膜晶体管层300位于所述柔性衬底200的一侧表面上。所述发光结构500位于所述薄膜晶体管层300上,与所述薄膜晶体管层300电连接。参见图4,所述薄膜晶体管层300具有至少一个金属连接区400,所述至少一个金属连接区400位于所述薄膜晶体管层300与所述柔性衬底200相邻的表面上,所述薄膜晶体管层300中的金属走线通过通孔与所述至少一个金属连接区400电连接。
参见图7,所述柔性衬底200具有至少一个开口,所述至少一个开口与所述至少一个金属连接区400对应设置,暴露出所述至少一个金属连接区400。
本实施例中,所述显示面板还包括至少一个控制芯片700,所述至少一个控制芯片700位于所述柔性衬底200背离所述薄膜晶体管层300的表面上,通过所述至少一个金属连接区400与所述薄膜晶体管层300电连接。
本实施例中,所述薄膜晶体管层300包括:缓冲层310、多个独立设置的有源区320、栅极介质层330、栅极金属层340、层间介质层350、源漏金属层360和平坦化层370。
所述缓冲层310设置在所述柔性衬底200上,覆盖所述至少一个金属连接区400。每一个所述有源区320包括沟道区和位于所述沟道区两侧的源漏区。所述栅极介质层330覆盖所述多个有源区320。所述栅极金属层340位于所述栅极介质层330上方,与所述多个有源区320对应设置。所述层间介质层350覆盖所述多个有源区320和栅极金属层340。所述源漏金属层360位于所述层间介质层350上方。
本发明的一个实施例中,所述至少一个金属连接区400包括第一金属连接区410和第二金属连接区420,所述栅极金属层340通过第一通孔与所述第一金属连接区410电连接,所述源漏金属层360通过第二通孔与所述第二金属连接区420电连接。或者,在本实施例中,如图4所示,所述栅极金属层340通过第一通孔与所述第二金属连接区420电连接。所述源漏金属层360通过第二通孔与所述第一金属连接区410连接。所述至少一个金属连接区和所述薄膜晶体管中的金属层可以根据需要进行连接,上述实施例中的连接关系不能解释为对本发明的限制。
本实施例中,所述显示面板还包括至少一个柔性电路板600,每一个所述柔性电路板600的一端连接所述金属连接区,另一端连接所述控制芯片700。
相应的,本发明还提供了一种显示面板的制作方法,该方法包括以下步骤。
首先,参见图1,提供柔性衬底200;
之后,参见图2、图3和图4形成薄膜晶体管层300,所述薄膜晶体管层300位于所述柔性衬底200的一侧表面上,所述薄膜晶体管层300具有至少一个金属连接区400,所述至少一个金属连接区400位于所述薄膜晶体管层300与所述柔性衬底200相邻的表面上,所述薄膜晶体管层300中的金属走线通过通孔与所述至少一个金属连接区400电连接。
之后,参见图5,形成发光结构500,所述发光结构500位于所述薄膜晶体管层300上,与所述薄膜晶体管层300电连接。
之后,参见图6,在所述柔性衬底200上形成至少一个开口,所述至少一个开口与所述至少一个金属连接区400对应设置,暴露出所述至少一个金属连接区400。
之后,参见图7,提供控制芯片700,所述至少一个控制芯片700位于所述柔性衬底200背离所述薄膜晶体管层300的表面上,通过所述至少一个金属连接区400与所述薄膜晶体管层300电连接。
本申请中,所述至少一个金属连接区400包括第一金属连接区410和第二金属连接区420。
本实施例中,形成所述薄膜晶体管的方法包括:
参见图2,形成至少一个金属连接区400,所述至少一个金属连接区400位于所述薄膜晶体管层300与所述柔性衬底200相邻的表面上。
参见图3,形成缓冲层310,所述缓冲层310设置在所述柔性衬底200上,覆盖所述至少一个金属连接区400。之后形成多个独立设置的有源区320,每一个所述有源区320包括沟道区和位于所述沟道区两侧的源漏区。之后形成栅极介质层330,所述栅极介质层330覆盖所述多个有源区320,所述栅极金属层340通过第一通孔与所述第一金属连接区410电连接。之后形成栅极金属层340,所述栅极金属层340位于所述栅极介质层330上方,与所述多个有源区320对应设置;
之后,参见图4,形成层间介质层350,所述层间介质层350覆盖所述多个有源区320和栅极金属层340。形成源漏金属层360,所述源漏金属层360位于所述层间介质层350上方。所述源漏金属层360通过第二通孔与所述第二金属连接区420电连接。
本申请提供的显示面板采用柔性衬底,并且在薄膜晶体管层和柔性衬底之间设置了多个金属连接区,所述薄膜晶体管层中的金属走线通过通孔与所述多个金属连接区电连接。这样的设置,将显示面板与控制芯片连接的接口和连接电路设置在了柔性衬底背面,不占用显示面板出光面的面积,能够将非显示区的面积减小至0。因此,本申请能够实现屏占比接近于100%的全面屏。
综上所述,虽然本申请已以优选实施例揭露如上,但上述优选实施例并非用以限制本申请,本领域的普通技术人员,在不脱离本申请的精神和范围内,均可作各种更动与润饰,因此本申请的保护范围以权利要求界定的范围为准。
Claims (12)
1.一种显示面板,其特征在于,所述显示面板包括:
柔性衬底;
薄膜晶体管层,所述薄膜晶体管层位于所述柔性衬底的一侧表面上;
发光结构,所述发光结构位于所述薄膜晶体管层上,与所述薄膜晶体管层电连接;其中,
所述薄膜晶体管层具有至少一个金属连接区,所述至少一个金属连接区位于所述薄膜晶体管层与所述柔性衬底相邻的表面上,所述薄膜晶体管层中的金属走线通过通孔与所述至少一个金属连接区电连接;
所述柔性衬底具有至少一个开口,所述至少一个开口与所述至少一个金属连接区对应设置,暴露出所述至少一个金属连接区。
2.根据权利要求1所述的显示面板,其特征在于,所述显示面板还包括至少一个控制芯片,所述至少一个控制芯片位于所述柔性衬底背离所述薄膜晶体管层的表面上,通过所述至少一个金属连接区与所述薄膜晶体管层电连接。
3.根据权利要求2所述的显示面板,其特征在于,所述薄膜晶体管层包括:
缓冲层,所述缓冲层设置在所述柔性衬底上,覆盖所述至少一个金属连接区;
多个独立设置的有源区,每一个所述有源区包括沟道区和位于所述沟道区两侧的源漏区;
栅极介质层,所述栅极介质层覆盖所述多个有源区;
栅极金属层,所述栅极金属层位于所述栅极介质层上方,与所述多个有源区对应设置;
层间介质层,所述层间介质层覆盖所述多个有源区和栅极金属层;
源漏金属层,所述源漏金属层位于所述层间介质层上方。
4.根据权利要求3所述的显示面板,其特征在于,所述至少一个金属连接区包括第一金属连接区和第二金属连接区。
5.根据权利要求4所述的显示面板,其特征在于,所述栅极金属层通过第一通孔与所述第一金属连接区电连接。
6.根据权利要求4所述的显示面板,其特征在于,所述源漏金属层通过第二通孔与所述第二金属连接区电连接。
7.根据权利要求2所述的显示面板,其特征在于,所述显示面板还包括至少一个柔性电路板,每一个所述柔性电路板的一端连接所述金属连接区,另一端连接所述控制芯片。
8.根据权利要求1所述的显示面板,其特征在于,所述显示面板为液晶显示面板。
9.根据权利要求1所述的显示面板,其特征在于,所述显示面板为有机自发光二极管显示面板。
10.一种显示面板的制作方法,其特征在于,该方法包括以下步骤:
提供柔性衬底;
形成薄膜晶体管层,所述薄膜晶体管层位于所述柔性衬底的一侧表面上,所述薄膜晶体管层具有至少一个金属连接区,所述至少一个金属连接区位于所述薄膜晶体管层与所述柔性衬底相邻的表面上,所述薄膜晶体管层中的金属走线通过通孔与所述至少一个金属连接区电连接;
形成发光结构,所述发光结构位于所述薄膜晶体管层上,与所述薄膜晶体管层电连接;
在所述柔性衬底上形成至少一个开口,所述至少一个开口与所述至少一个金属连接区对应设置,暴露出所述至少一个金属连接区;
提供控制芯片,所述至少一个控制芯片位于所述柔性衬底背离所述薄膜晶体管层的表面上,通过所述至少一个金属连接区与所述薄膜晶体管层电连接。
11.根据权利要求10所述的显示面板的制作方法,其特征在于,所述至少一个金属连接区包括第一金属连接区和第二金属连接区。
12.根据权利要求11所述的显示面板的制作方法,其特征在于,形成所述薄膜晶体管的方法包括:
形成至少一个金属连接区,所述至少一个金属连接区位于所述薄膜晶体管层与所述柔性衬底相邻的表面上;
形成缓冲层,所述缓冲层设置在所述柔性衬底上,覆盖所述至少一个金属连接区;
形成多个独立设置的有源区,每一个所述有源区包括沟道区和位于所述沟道区两侧的源漏区;
形成栅极介质层,所述栅极介质层覆盖所述多个有源区,所述栅极金属层通过第一通孔与所述第一金属连接区电连接;
形成栅极金属层,所述栅极金属层位于所述栅极介质层上方,与所述多个有源区对应设置;
形成层间介质层,所述层间介质层覆盖所述多个有源区和栅极金属层;
形成源漏金属层,所述源漏金属层位于所述层间介质层上方。所述源漏金属层通过第二通孔与所述第二金属连接区电连接。
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