CN110217753A - A kind of through-hole capacitance type micromachined ultrasonic energy converter and preparation method thereof - Google Patents
A kind of through-hole capacitance type micromachined ultrasonic energy converter and preparation method thereof Download PDFInfo
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- CN110217753A CN110217753A CN201910410680.7A CN201910410680A CN110217753A CN 110217753 A CN110217753 A CN 110217753A CN 201910410680 A CN201910410680 A CN 201910410680A CN 110217753 A CN110217753 A CN 110217753A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/0207—Driving circuits
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0067—Mechanical properties
- B81B3/007—For controlling stiffness, e.g. ribs
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00182—Arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a transducer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00214—Processes for the simultaneaous manufacturing of a network or an array of similar microstructural devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
- B81C1/0065—Mechanical properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/03—Static structures
- B81B2203/0353—Holes
Abstract
The invention discloses a kind of high transmitting powers, through-hole type structure ultrasonic transducer of low-work voltage and preparation method thereof, through-hole type structure ultrasonic transducer includes vibration film, pillar, insulating layer and lower electrode, wherein, vibration film forms top electrode by heavy doping, its geomery is consistent with cavity structure, the pillar is etched with cavity structure, the cavity structure includes through-hole cavity and conventional cavity, the presence of through-hole cavity is by independent conventional cavity is open-minded originally in traditional structure unit, each unit is promoted to connect by through-hole, it is clamped that the original periphery fixed of conventional elements is changed to quadrangle, and then reduce rigidity, increase electrostatic force region, and then reduce operating voltage, improve electromechanical coupling factor, increase transmission power and packing ratio.
Description
Technical field
The invention belongs to MEMS technology fields, and in particular to the through-hole condenser type of a kind of high transmitting power, low-work voltage
Micro-machined ultrasonic transducer and preparation method thereof.
Background technique
Ultrasonic technique is one of the technology being most widely used in modern science and technology.Due to meeting when ultrasonic wave is propagated in medium
The series of effects such as physics, chemistry, biology are generated, have many advantages, such as that penetration power is strong, convergence is good and information carrying amount is big, because
And its application is throughout fields such as industry, clinical medicine, biochemistry, food, environment.Capacitance type micromachined ultrasonic energy converter
(Capacitive Micromachined Ultrasonic Transducers, abbreviation CMUTs) is based on all of MEMS technology
The device of great structure and performance advantage in more micro-nano devices.Since CMUTs has, electromechanical properties are good, quality factor is high, sensitive
Degree is high, with roomy, noise is low, operating temperature range is wide and easy array, it is easy of integration the advantages that, be widely used in ultrasound at
Picture, non-destructive testing etc..However, needing to be equipped with external since CMUTs is at work in order to obtain larger electromechanical coupling factor
Power supply provides larger DC offset voltage as operating voltage, and operating voltage (generally the 90% of collapse voltage) is up to 100
More than volt even several hectovolts, thus it cannot achieve low power consumption and portability, and easily cause safety problem.Currently, in order to
Operating voltage is reduced, is often realized by reducing CMUTs cavity height.With the reduction of cavity height, electromechanical coupling factor increases
Greatly, electrostatic force increases, and collapse voltage is caused to reduce, and then reduces operating voltage.However, when CMUTs is used as ultrasonic transmitter
When, it in order to obtain biggish ultrasonic intensity, needs to increase membrane oscillation amplitudes, increases cavity height.Therefore, though reducing cavity height
Mechanical-electric coupling efficiency can be increased, reduce operating voltage, but ultrasonic power output can be reduced.Meanwhile traditional side CMUTs
Shape, circular configuration are linked together by independent cellular construction, and each unit realizes electricity further through top electrode lead
Connection, this introduces more parasitic capacitances, thereby reduce electromechanical coupling factor.
Summary of the invention
To solve the above-mentioned problems, the present invention provides a kind of through-hole capacitance type micromachined ultrasonic energy converter and its preparation sides
Method, original separate unit cavity is open-minded, promote each unit to connect by through-hole, and then reduce operating voltage, improves machine
Electric coupling coefficient increases transmission power and packing ratio.
In order to achieve the above objectives, the present invention describes a kind of through-hole capacitance type micromachined ultrasonic energy converter and its preparation side
Method, CMUTs unit include from top to bottom successively are as follows: vibration film, pillar, insulating layer and monocrystalline substrate, wherein the branch
Column etches cavity structure, and the cavity structure includes through-hole cavity and conventional cavity, and the cavity structure passes through Direct Bonding
Technique preparation, is sealed into vacuum chamber using vibration film, insulating layer is located under cavity, and substrate plays upper and lower electrode
Insulation protection, the vibration film form top electrode by boron ion heavy doping, and top electrode and cavity structure shape and
Outer dimension is consistent, and the monocrystalline substrate is low-resistance silicon, collectively serves as lower electrode with the gold electrode of back spatter.As
Preferred implementation case of the invention, the vibration film with a thickness of 0.5~2 μm, the monocrystalline silicon thin film lateral dimension be 10
~30 μm.
As preferred implementation case of the invention, the strut height is 0.08~0.4 μm, and width is 3~10 μm.
As preferred implementation case of the invention, the cavity structure height is consistent with strut height, the through-hole
Cavity area width and the width of branch intercolumniation are consistent, and length is 5~15 μm.
As preferred implementation case of the invention, the thickness of insulating layer is 0.05~0.1 μm.
As preferred implementation case of the invention, the resistivity after vibration film doping be lower than 0.001 Ω cm,
And it is consistent with cavity structure outer dimension.
A kind of preparation method of through-hole capacitance type micromachined ultrasonic energy converter, comprising the following steps:
Step 1 chooses (100) crystal face twin polishing silicon wafer as substrate, cleans posttergite, forms monocrystalline silicon lining
Bottom；
Step 2, monocrystalline substrate upper and lower surfaces by dry method thermal oxide respectively formed a layer thickness be 0.08~0.4 μ
The silicon dioxide layer of m；
Step 3, after gluing, development, dry etching is carried out to above-mentioned silicon dioxide layer, forms cavity structure and branch
Column；
The resulting structure of step 3 is carried out secondary oxidation by step 4, is formed in cavity bottom with a thickness of 0.05~0.1 μm
Insulating layer；
Step 5 selects top monocrystalline silicon layer to be the SOI piece of (100) crystal face, cleans standby piece by RCA standard cleaning technique；
The bonding face of the bonding face of step 5 gained SOI piece top layer silicon and step 4 resulting structures is carried out plasma by step 6
Low-temperature-direct-bonding is carried out after activation processing under vacuum conditions；
The substrate silicon of SOI piece part in structure after step 6 bonding is passed through mechanical thinning process from top to bottom by step 7
Removal 80%；
Step 8 removes the substrate silicon in the residue 20% of step 7 resulting structures by dry etching；
Step 9, by the SiO of SOI piece in step 8 structure2Buried layer is removed by dry etching, leaves top silicon surface, is constituted
Vibration film；
Step 10 forms top electrode in vibration film upper heavy doping by local ion injection technique, wherein top electrode knot
Structure and size are similar to cavity structure, and adulterate area and be less than or equal to cavity structure area；
Step 11, rinsing back side SiO2；
Step 12,0.4-0.7 μm of back spatter of gold electrode.
Relative to the CMUTs of traditional square, round separate unit structure, at least there is the present invention following Advantageous to imitate
Fruit: 1) design of through-hole structure makes the original periphery fixed constraint of traditional structure become the clamped constraint in quadrangle, and then reduces original
The rigidity of structure makes the present invention have lower collapse voltage and operating voltage；2) design of through-hole structure is reducing rigidity
Meanwhile increasing the amplitude of vibration film, ultrasonic wave transmission power increases；3) design of through-hole structure keeps traditional structure original
The parasitic capacitance that introduces of electrode connecting line be changed into can dynamic condenser, and then increase electromechanical coupling factor；4) through-hole structure
Design, makes a part at the original pillar of traditional structure become cavity, and then increase the packing ratio of total chip.
Further, entablature is hollow structure, and several and contour groove of entablature is offered on entablature, and groove will
Entablature is divided into several pillars, and hollow structure, vibration film and insulating layer form conventional cavity, groove, vibration film with
And insulating layer forms through-hole cavity, conventional cavity is connected to form cavity structure with through-hole cavity.
Further, top electrode shape is consistent with cavity structure shape, but area is less than or equal to cavity structure, can subtract
Small parasitic capacitance.
Further, for guarantee ultrasonic transducer vibration frequency and reduce operating voltage, vibration film with a thickness of 0.5
μm~2 μm, the length and width value range of monocrystalline silicon thin film is 10 μm~30 μm, and the resistivity of top electrode is lower than 0.001
Ω·cm。
Further, pillar through-hole cavity area width and the width of branch intercolumniation are consistent, through-hole cavity area length
It is 5 μm~15 μm, the side length of through-hole cavity area length and pillar can be arbitrarily arranged.It ensure that the vibration frequency of ultrasonic transducer
Rate simultaneously reduces operating voltage,
Further, strut height be 0.08 μm~0.4 μm, width be 3 μm~10 μm, thickness of insulating layer be 0.05~
0.1 μm of reduction operating voltage.
Further, electrode is gold electrode.Reduce parasitic capacitance, increases sensor electromechanical coupling factor.
Detailed description of the invention
Fig. 1 is the through-hole CMUTs cellular construction sectional side elevation of embodiment 1；
Fig. 2 is the top view of the through-hole CMUTs cellular construction of embodiment 1；
Fig. 3 is the through-hole CMUTs structural unit half-section diagram of embodiment 1；
Fig. 4 a is the CMUTs array schematic diagram of embodiment 1；
Fig. 4 b is the partial cutaway view of Fig. 4 a；
Fig. 5 a is tradition CMUTs structural unit half-section diagram；
Fig. 5 b is tradition CMUTs array of structures schematic diagram；
Fig. 6 is the CMUTs array schematic diagram of embodiment 2；
Fig. 7 is the partial cutaway view of Fig. 6；
Fig. 8 is the CMUTs structural unit half-section diagram of embodiment 2；
Fig. 9 is the CMUTs structural unit top view of embodiment 2；
Figure 10 is the preparation technology flow chart of through-hole CMUTs.
In attached drawing: 1, vibration film, 2, entablature, 21, pillar, 3, cavity structure, 4, insulating layer, 5, lower electrode, 11, vibration
Dynamic film is undoped with region, 12, top electrode, 31, conventional cavity, 32, through-hole cavity, 51, monocrystalline substrate, 52, electrode, and 6, two
Silicon oxide layer, 7, SOI piece, 71, substrate silicon, 72, SiO2Buried layer, 73, top silicon surface, 8, groove, 100, CMUTs unit.
Specific embodiment
The following describes the present invention in detail with reference to the accompanying drawings and specific embodiments.
In the description of the present invention, it is to be understood that, term " center ", " longitudinal direction ", " transverse direction ", "upper", "lower",
The orientation or positional relationship of the instructions such as "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outside" is
It is based on the orientation or positional relationship shown in the drawings, is merely for convenience of description of the present invention and simplification of the description, rather than instruction or dark
Show that signified device or element must have a particular orientation, be constructed and operated in a specific orientation, therefore should not be understood as pair
Limitation of the invention.In addition, term " first ", " second " are used for description purposes only, it is not understood to indicate or imply opposite
Importance or the quantity for implicitly indicating indicated technical characteristic.Define " first " as a result, the feature of " second " can be bright
Show or implicitly include one or more of the features.In the description of the present invention, unless otherwise indicated, " multiple " contain
Justice is two or more.
Embodiment 1
Referring to figs. 1 to Fig. 2, a kind of through-hole capacitance type micromachined ultrasonic energy converter includes several CMUTs units 100, CMUTs
Vibration film 1, entablature 2, insulating layer 4 and the lower electrode 5 that unit 100 is set gradually from top to bottom, entablature 2 include first to
4th pillar, first to fourth pillar are arranged at four corner points of 4 upper surface of insulating layer, when 100 groups of several CMUTs units
When being combined, 21 inner wall of pillar in same CMUTs unit 100 forms cavity, and the cross section of cavity is square, adjacent
Groove 8 is formed between CMUTs unit.Cavity, vibration film 1 and insulating layer 4 form conventional cavity 31, the groove 8, vibration
Film 1 and insulating layer 4 form through-hole cavity 32, and the conventional cavity 31 is connected to form cavity structure 3 with through-hole cavity 32.
With reference to Fig. 2, vibration film 1 includes vibration film undoped with region 11 and top electrode 12, and wherein top electrode 12 is by shaking
Dynamic film 1 carries out local heavy doping and is formed；With reference to shown in Fig. 3, Fig. 4 a and Fig. 4 b, through-hole CMUTs structural cavities structure 3, cavity
Structure 3, including conventional cavity 31 and through-hole cavity 32, cavity structure 3 are prepared by Direct Bonding technique, are vibrated using monocrystalline silicon
Film 1 is sealed into vacuum chamber；Refering to what is shown in Fig. 5, lower electrode 5 includes monocrystalline substrate 51 and is arranged in 51 lower part of monocrystalline substrate
Electrode 52.
When work, it is also the excitation of small signal communication that top electrode 12 and lower electrode 5, which are the application point of direct current biasing operating voltage,
The application point (0.5V~1V) of voltage.After direct current biasing operating voltage applies, as shown in Fig. 3, Fig. 5 a and Fig. 5 b, tradition
The conventional cavity 31 of CMUTs generates deformation, and through-hole CMUTs is due to being additionally provided with through-hole other than being provided with conventional cavity 31
Cavity 32, and then have bigger electrostatic force on vibration film 1, and at this existing for electrostatic force promote in through-hole cavity 32
Place also produces corresponding electrostatic deformation, therefore through-hole CMUTs has higher variable capacitance, and then can obtain compared to same
Etc. the higher electromechanical coupling factor of structure sizes tradition CMUTs.Meanwhile through-hole CMUTs changes original periphery fixed structure
For quadrangle fixed support structure, the rigidity of traditional structure is reduced, and then can reduce the collapse voltage of traditional CMUTs, to reduce
Operating voltage and power consumption；Simultaneously as the increase of electrostatic force, the rigidity bating effect of structure increases, and can further decrease knot
The collapse voltage of structure reduces power consumption.Again, quadrangle fixed support structure can be such that through-hole CMUTs generates on the basis of reducing rigidity
Bigger amplitude, and then increase ultrasound emission power.Finally, as shown in Fig. 2, comparing conventional cavity structure size, through-hole CMUTs
Due to being provided with through-hole cavity 32, hanging ratio is bigger, has higher structure filling ratio, more conducively increases output electricity
Stream.
Referring to Fig.1 0, a kind of preparation method of through-hole CMUTs, specifically includes the following steps:
Step 1, selection silicon substrate
Take the silicon wafer of N-shaped (100) crystal face twin polishing as substrate, due to being used as lower electrode, resistivity be should be less than
0.01 Ω cm, is rinsed using wet process, removes surface oxide layer posttergite, which forms monocrystalline substrate 51；
Step 2, thermal oxide
Under the conditions of 1050 DEG C, using thermal oxidation technology, a layer thickness is respectively formed in the upper and lower surfaces of monocrystalline substrate 51
For 0.08~0.4 μm of compact silicon dioxide layer 6；
Step 3, dry etching: after gluing, development, using plasma etching technics will be on step 2 resulting structures
The silicon dioxide layer 6 on surface carries out dry etching, forms pillar 21 and cavity structure 3；
Step 4, secondary thermal oxide
Carry out thermal oxide again, 3 bottom of cavity structure in step 3 resulting structures formed a layer thickness be 0.05~
0.1 μm of insulating layer 4；
Step 5 chooses SOI piece
Selecting top monocrystalline silicon film is the SOI piece 7 of (100) crystal face, and SOI piece 7 includes the substrate silicon 71 set gradually, SiO2
Buried layer 72 and top silicon surface 73 clean standby piece using RCA standard cleaning technique；
Direct Bonding after step 6, activation processing
The bonding face of the bonding face of 7 top layer silicon of step 5 gained SOI piece and step 4 resulting structures is subjected to plasma activation
Processing, and hydrophilic treated is carried out, low-temperature-direct-bonding is then carried out under vacuum conditions, forms cavity structure 3, annealing
Afterwards, furnace cooling；
Step 7, chemically mechanical polishing
The substrate silicon 71 of the part of SOI piece 7 in the structure after step 6 bonding is passed through into chemically mechanical polishing work from top to bottom
Skill (CMP) removes 80% thickness；
Step 8, dry etching remove substrate silicon
Using dry etch process, the substrate silicon of the SOI piece some residual 20% in step 7 resulting structures is removed；
Step 9, dry etching remove SiO2Buried layer 72
Using dry etch process by the SiO of SOI piece in step 8 structure2Buried layer 72 is removed by dry etching, leaves top
Layer silicon fiml 73, constitutes vibration film 1；
Step 10, heavy doping
Using local ion injection technique, 1 upper heavy doping of vibration film of step 9 resulting structures forms doped region and not
Doped region is used as top electrode 12 by doped region 11, and wherein top electrode 12 is consistent with the shape and size of conventional cavity 31, and
Resistivity is 0.01~0.02 Ω cm after doping；
Step 11, rinsing back side SiO2
It is front with 12 place face of top electrode, applies 2.4 μm of photoresist to protect Facad structure, 80 DEG C of drying glue 50min, with
The resistance to acid and alkali for increasing glue rinses the silicon dioxide layer 6 at the back side using wet-etching technology.
Step 12, back aluminium
Back spatter is with a thickness of 0.4~0.7 μm of electrode 52, to prevent the monocrystalline substrate 51 of lower electrode 5 from nature occurs
It aoxidizes and influences device conducts.
Embodiment 2
The present embodiment difference from example 1 is that, the shape of conventional cavity 31 is different, corresponding, pillar 21
Shape is also different, and in this present embodiment, the cross section of conventional cavity 31 is circle.
Referring to Fig. 6, CMUTs array include several arrays arrangements CMUTs unit 100, adjacent CMUTs unit 100
Close connection.Referring to Fig. 7, the through-hole cavity 32 between adjacent CMUTs unit 100 forms the logical of connection CMUTs unit 100
Road；Referring to Fig. 8 and Fig. 9, the face that pillar 21 connects with conventional cavity 31 is arcwall face.
The present invention proposes the through-hole capacitance type micromachined ultrasonic energy converter and its system of a kind of high transmitting power, low-work voltage
Preparation Method, the key technical indexes are as follows:
Resonance frequency: 5MHz~30MHz；
Collapse voltage: 5V~20V；
Electromechanical coupling factor: greater than 80%；
Operating temperature: -20 DEG C~120 DEG C；
Packing ratio: greater than 70%；
The present invention is not limited to above-mentioned specific embodiment, the through-hole CMUTs element number, array structure size and
The thickness of array distribution form and each structure sheaf, width equidimension feature can all make corresponding excellent according to practical situation
Change adjustment, entire optimization process, which need to follow, to be increased electromechanical coupling factor, reduces the basic principles such as operating voltage.
The foregoing is merely one embodiment of the present invention, it is not all of or unique embodiment, this field is general
Any equivalent transformation that logical technical staff takes technical solution of the present invention by reading description of the invention, is the present invention
Claim covered.
Claims (9)
1. a kind of through-hole capacitance type micromachined ultrasonic energy converter, which is characterized in that the through-hole CMUTs including several arrays arrangement is mono-
First (100), CMUTs unit (100) include the vibration film (1) set gradually from top to bottom, entablature (2), insulating layer (4) and
Lower electrode (5), wherein offered in entablature (2) cavity structure (3), the sky of the adjacent through-hole CMUTs unit (100)
Cavity configuration (3) is interconnected；The insulating layer (4) is located between cavity structure (3) and lower electrode (5), the vibration film (1)
Including top electrode (12), the lower electrode (5) includes monocrystalline substrate (51) and electrode (52).
2. a kind of through-hole capacitance type micromachined ultrasonic energy converter according to claim 1, which is characterized in that the entablature
(2) middle part offers cavity, and several and entablature (2) contour groove (8), the groove are offered on the entablature (2)
(8) entablature (2) is divided into several pillars (21), the cavity, vibration film (1) and insulating layer (4) form conventional empty
Chamber (31), the groove (8), vibration film (1) and insulating layer (4) form through-hole cavity (32), the conventional cavity (31)
It is connected to form cavity structure (3) with through-hole cavity (32).
3. a kind of through-hole capacitance type micromachined ultrasonic energy converter according to claim 2, which is characterized in that the through-hole is empty
Chamber (32) zone length is 5 μm~15 μm.
4. a kind of through-hole capacitance type micromachined ultrasonic energy converter according to claim 2, which is characterized in that the pillar
It (21) is highly 0.08 μm~0.4 μm, width is 3 μm~10 μm.
5. a kind of through-hole capacitance type micromachined ultrasonic energy converter according to claim 1, which is characterized in that the top electrode
(12) shape is consistent with cavity structure (3) shape, and area is less than or equal to the area of cavity structure (3).
6. a kind of through-hole capacitance type micromachined ultrasonic energy converter according to claim 1, which is characterized in that the vibration is thin
Film (1) with a thickness of 0.5 μm~2 μm, the length and width value range of the vibration film (1) is 10 μm~30 μm.
7. a kind of through-hole capacitance type micromachined ultrasonic energy converter according to claim 1, which is characterized in that the insulating layer
(4) with a thickness of 0.05 μm~0.1 μm.
8. a kind of through-hole capacitance type micromachined ultrasonic energy converter according to claim 1, which is characterized in that the electrode
It (52) is gold electrode.
9. a kind of preparation method of through-hole capacitance type micromachined ultrasonic energy converter, comprising the following steps:
Step 1 takes silicon wafer as substrate, cleans posttergite, is formed silicon wafer monocrystalline substrate (51)；
Step 2 respectively forms layer of silicon dioxide layer (6) by dry method thermal oxide in the upper and lower surfaces of monocrystalline substrate (51)；
Step 3 carries out dry etching to the silicon dioxide layer (6) of the monocrystalline substrate (51) upper surface, forms cavity structure
(3) and pillar (21)；
Step 4 aoxidizes the resulting structure of step 3, forms insulating layer (4) in cavity structure (3) bottom；
The bonding face of SOI piece (7) top layer silicon and step 4 resulting structures are bonded by step 5；
Step 6 removes the substrate silicon (71) of SOI piece (7) part in structure after step 6 bonding by mechanical thinning process
70%~80% thickness；
Step 7 removes the remaining substrate silicon (71) in step 7 resulting structures by dry etching；
Step 8, by the SiO of SOI piece (7) in step 8 structure2Buried layer (72) removal, leaves top silicon surface (73), and it is thin to form vibration
Film (1)；
Step 9 forms top electrode (12) in the vibration film (1) upper heavy doping, wherein the shape and cavity of top electrode (12)
Structure (3) is consistent；
Step 10 take face where top electrode (12) as positive, the silicon dioxide layer (6) for the structured rear surface that rinse step 9 obtains；
Step 11, the structured rear surface sputtering electrode (52) obtained in step 10.
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| CN111573615A (en) * | 2020-05-19 | 2020-08-25 | 上海集成电路研发中心有限公司 | Inertial sensor and manufacturing method thereof |
| CN111591951A (en) * | 2020-02-24 | 2020-08-28 | 上海集成电路研发中心有限公司 | Ultrasonic sensor structure and manufacturing method thereof |
| CN111889341A (en) * | 2020-07-30 | 2020-11-06 | 中国兵器工业集团第二一四研究所苏州研发中心 | Ultrathin flexible silicon-based capacitive micro-machined ultrasonic transducer and processing method |
| CN113364423A (en) * | 2021-05-27 | 2021-09-07 | 天津大学 | Piezoelectric MEMS resonator, forming method thereof and electronic equipment |
| TWI740410B (en) * | 2020-03-10 | 2021-09-21 | 友達光電股份有限公司 | Transducer |
| CN113472308A (en) * | 2021-04-29 | 2021-10-01 | 天津大学 | Resonator, forming method thereof and electronic device |
| WO2021253444A1 (en) * | 2020-06-19 | 2021-12-23 | 深圳市汇顶科技股份有限公司 | Ultrasonic transducer preparation method, ultrasonic transducer and information acquisition element |
| CN114505213A (en) * | 2022-01-20 | 2022-05-17 | 中国兵器工业集团第二一四研究所苏州研发中心 | CMUT chip, processing method thereof and CMUT |
| CN114950924A (en) * | 2022-04-02 | 2022-08-30 | 华东师范大学 | MEMS piezoelectric ultrasonic transducer array with arc-shaped or inclined-plane acoustic cavity |
| CN114950926A (en) * | 2022-06-24 | 2022-08-30 | 江苏英特神斯科技有限公司 | Piezoelectric micro-mechanical ultrasonic transducer array and manufacturing method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010098454A (en) * | 2008-10-15 | 2010-04-30 | Canon Inc | Mechanoelectric transducer element |
| WO2011021358A2 (en) * | 2009-08-19 | 2011-02-24 | Canon Kabushiki Kaisha | Capacitive electromechanical transducer apparatus and method for adjusting its sensitivity |
| CN102158794A (en) * | 2010-01-26 | 2011-08-17 | 佳能株式会社 | Capacitive electromechanical transducer |
| CN106315506A (en) * | 2016-08-11 | 2017-01-11 | 河南大学 | Micromachining technology for manufacturing composite capacitive micromachined ultrasonic transducer |
| CN107812690A (en) * | 2016-09-12 | 2018-03-20 | 珂纳医疗科技(苏州)有限公司 | Bias application for capacitive micromachined ultrasonic transducer |
| CN108704827A (en) * | 2018-04-16 | 2018-10-26 | 天津大学 | Capacitance type micromachined ultrasonic energy converter, the Preparation method and use of Air Coupling formula |
| CN108793061A (en) * | 2018-05-25 | 2018-11-13 | 岭南师范学院 | A kind of preparation method of full electrode raised lines structure CMUT devices |
| CN108918662A (en) * | 2018-05-16 | 2018-11-30 | 西安交通大学 | A kind of CMUTs fluid density sensor and preparation method thereof |
-
2019
- 2019-05-16 CN CN201910410680.7A patent/CN110217753B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010098454A (en) * | 2008-10-15 | 2010-04-30 | Canon Inc | Mechanoelectric transducer element |
| WO2011021358A2 (en) * | 2009-08-19 | 2011-02-24 | Canon Kabushiki Kaisha | Capacitive electromechanical transducer apparatus and method for adjusting its sensitivity |
| CN102158794A (en) * | 2010-01-26 | 2011-08-17 | 佳能株式会社 | Capacitive electromechanical transducer |
| CN106315506A (en) * | 2016-08-11 | 2017-01-11 | 河南大学 | Micromachining technology for manufacturing composite capacitive micromachined ultrasonic transducer |
| CN107812690A (en) * | 2016-09-12 | 2018-03-20 | 珂纳医疗科技(苏州)有限公司 | Bias application for capacitive micromachined ultrasonic transducer |
| CN108704827A (en) * | 2018-04-16 | 2018-10-26 | 天津大学 | Capacitance type micromachined ultrasonic energy converter, the Preparation method and use of Air Coupling formula |
| CN108918662A (en) * | 2018-05-16 | 2018-11-30 | 西安交通大学 | A kind of CMUTs fluid density sensor and preparation method thereof |
| CN108793061A (en) * | 2018-05-25 | 2018-11-13 | 岭南师范学院 | A kind of preparation method of full electrode raised lines structure CMUT devices |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111591951A (en) * | 2020-02-24 | 2020-08-28 | 上海集成电路研发中心有限公司 | Ultrasonic sensor structure and manufacturing method thereof |
| CN111591951B (en) * | 2020-02-24 | 2023-09-26 | 上海集成电路研发中心有限公司 | Ultrasonic sensor structure and manufacturing method thereof |
| TWI740410B (en) * | 2020-03-10 | 2021-09-21 | 友達光電股份有限公司 | Transducer |
| CN111573615B (en) * | 2020-05-19 | 2023-09-05 | 上海集成电路研发中心有限公司 | Inertial sensor and manufacturing method thereof |
| CN111573615A (en) * | 2020-05-19 | 2020-08-25 | 上海集成电路研发中心有限公司 | Inertial sensor and manufacturing method thereof |
| WO2021253444A1 (en) * | 2020-06-19 | 2021-12-23 | 深圳市汇顶科技股份有限公司 | Ultrasonic transducer preparation method, ultrasonic transducer and information acquisition element |
| CN111889341A (en) * | 2020-07-30 | 2020-11-06 | 中国兵器工业集团第二一四研究所苏州研发中心 | Ultrathin flexible silicon-based capacitive micro-machined ultrasonic transducer and processing method |
| CN111889341B (en) * | 2020-07-30 | 2021-07-13 | 中国兵器工业集团第二一四研究所苏州研发中心 | Ultrathin flexible silicon-based capacitive micro-machined ultrasonic transducer and processing method |
| CN113472308A (en) * | 2021-04-29 | 2021-10-01 | 天津大学 | Resonator, forming method thereof and electronic device |
| CN113472308B (en) * | 2021-04-29 | 2022-11-22 | 广州乐仪投资有限公司 | Resonator, forming method thereof and electronic equipment |
| CN113364423A (en) * | 2021-05-27 | 2021-09-07 | 天津大学 | Piezoelectric MEMS resonator, forming method thereof and electronic equipment |
| CN113364423B (en) * | 2021-05-27 | 2023-11-10 | 广州乐仪投资有限公司 | Piezoelectric MEMS resonator, forming method thereof and electronic equipment |
| CN114505213A (en) * | 2022-01-20 | 2022-05-17 | 中国兵器工业集团第二一四研究所苏州研发中心 | CMUT chip, processing method thereof and CMUT |
| CN114505213B (en) * | 2022-01-20 | 2023-03-07 | 中国兵器工业集团第二一四研究所苏州研发中心 | CMUT chip, processing method thereof and CMUT |
| CN114950924A (en) * | 2022-04-02 | 2022-08-30 | 华东师范大学 | MEMS piezoelectric ultrasonic transducer array with arc-shaped or inclined-plane acoustic cavity |
| CN114950924B (en) * | 2022-04-02 | 2024-03-26 | 华东师范大学 | MEMS piezoelectric ultrasonic transducer array with arc or inclined plane acoustic cavity |
| CN114950926A (en) * | 2022-06-24 | 2022-08-30 | 江苏英特神斯科技有限公司 | Piezoelectric micro-mechanical ultrasonic transducer array and manufacturing method thereof |
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