CN110164784A - 用于回焊半导体装置的导电元件的方法及设备 - Google Patents
用于回焊半导体装置的导电元件的方法及设备 Download PDFInfo
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- CN110164784A CN110164784A CN201910107543.6A CN201910107543A CN110164784A CN 110164784 A CN110164784 A CN 110164784A CN 201910107543 A CN201910107543 A CN 201910107543A CN 110164784 A CN110164784 A CN 110164784A
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Abstract
本申请案涉及用于回焊半导体装置的导电元件的方法及设备。回焊位于晶片上的导电元件的方法可涉及将激光束朝向被支撑于膜框架的膜上的晶片的表面的区域引导,以回焊位于所述晶片的所述表面上的至少一个导电元件。在一些实施例中,可在激光回焊之前将所述晶片从载体衬底拆离并固定到所述膜框架。还揭示用于执行所述方法的设备,以及修复位于晶片上的先前经回焊导电元件的方法。
Description
优先权主张
本申请案主张2018年2月15日提出申请的美国专利申请案第15/898,019号“用于回焊半导体装置的导电元件的方法及设备(METHODS AND APPARATUSES FOR REFLOWINGCONDUCTIVE ELEMENTS OF SEMICONDUCTOR DEVICES)”的申请日期的权益。
技术领域
本发明一般来说涉及半导体处理且涉及用于制作及修复半导体装置的方法及设备。更具体来说,所揭示实施例涉及用于使用局部化定向能量来回焊位于半导体装置及包括半导体材料的晶片上的导电元件的方法及设备。
背景技术
包括半导体材料的晶片用于从其上形成集成电路的半导体装置位置阵列来每晶片制作众多半导体装置,此后将位于那些位置处的半导体装置分离或“单个化”,如工业中已知。另外,包括固定于基质材料中的先前经单个化半导体装置阵列的所谓的“经重构”晶片可用于制作半导体装置封装。在任一情形中,可在处置及处理期间将晶片常规地支撑于载体衬底上以减少由处置及处理的应力所致的晶片的翘曲及损坏。举例来说,当在晶片的表面上形成例如焊球或焊料尖端导电柱等导电元件时以及在晶片通过后续制造过程及处置而进行移动期间,可将所述晶片支撑于载体衬底上且暂时固定到所述载体衬底。举例来说,当将承载导电元件的晶片引入到炉中以进行导电元件的整体回焊时,晶片可保持固定到载体衬底。在回焊之后,可从晶片移除载体衬底,此可需要使用所施加力、所施加热、溶剂或者前述技术的组合或子组合。
发明内容
在一些实施例中,回焊位于晶片上的导电元件的方法可涉及将激光束朝向包括半导体材料的晶片的表面的至少一个区域引导。可响应于来自所述激光束的所施加能量而回焊位于所述晶片的所述表面上的所述至少一个区域中的至少一个导电元件。
在其它实施例中,回焊位于晶片上的导电元件的方法可涉及将包括半导体材料的晶片从支撑所述晶片的载体衬底拆离。可将所述晶片固定到膜,其中位于所述晶片的表面上的导电元件背对所述膜。可将激光束朝向所述晶片的所述表面的区域引导。可响应于来自所述激光束的所施加能量而回焊位于所述晶片的所述表面上的所述区域中的所述导电元件中的至少一些导电元件。
在其它实施例中,修复位于一或多个半导体结构上的导电元件的方法可涉及将激光束朝向位于一或多个半导体结构上的先前经回焊导电元件引导,所述先前经回焊导电元件被确定为有缺陷的,从而再次回焊所述有缺陷的导电元件。
在仍其它实施例中,用于热处理位于半导体结构上的导电元件的系统可包含:用于产生处于红外或可见绿色光谱中的激光束的设备,所述设备经配置以选择性地调整辐照的表面面积。用于控制所述激光束的路径的设备可以可操作方式耦合到所述用于产生激光束的设备。红外温度传感器可经配置以在由所述激光束进行辐照期间测量表面的温度。用于支撑半导体结构的膜可具备表面,所述表面在由所述用于产生激光束的设备产生的所述激光束辐照所述半导体结构的所述表面的同时承载预成形导电元件或者粘结剂中的离散导电元件材料团块中的一者。
附图说明
尽管本发明以尤其指出且明显地主张特定实施例的权利要求书结束,但当结合附图一起阅读时可依据以下描述较容易地确定在本发明的范围内的实施例的各种特征及优点,其中:
图1是在制作半导体装置的方法中的第一阶段期间的晶片的透视俯视图;
图2是在制作半导体装置的方法的第一阶段期间的晶片的另一实施例的透视俯视图;
图3是表示在制作半导体装置的方法的第二阶段期间的图1及2的晶片的一部分的横截面侧视图;
图4是表示在制作半导体装置的方法的第三阶段期间的图3的晶片的部分的横截面侧视图;
图5是表示在制作半导体装置的方法的第四阶段期间的图3的晶片的部分的横截面侧视图;
图6是在完成图4及5中所展示的第三及第四阶段之后根据前述方法所产生的晶片的部分的俯视图照片;
图7是表示在制作半导体装置的方法的第五阶段期间的图3的晶片的部分的横截面侧视图;
图8是在制作半导体装置的方法的第五阶段的另一实施例期间通过图1到6的方法而产生的晶片的部分的俯视图照片;
图9是拍摄在完成图7及8中所展示的第五阶段之后通过图1到8的方法而产生的晶片的部分的俯视图;
图10是拍摄在通过前述方法而进行的导电元件回焊之后的晶片的部分的透视仰视图;且
图11是通过图1到10的方法而产生的半导体装置的示意性横截面侧视图。
具体实施方式
本发明中所呈现的图解说明并非意指任何特定晶片、半导体装置、其组件或者处理及处置晶片或半导体装置的方法中的动作的实际视图,而是仅为用于描述说明性实施例的理想化表示。因此,图式未必按比例绘制。
所揭示实施例一般来说涉及回焊位于半导体装置及包括半导体材料的晶片上的导电元件的设备及方法,所述设备及方法可在半导体装置制作期间增加合格率、对在半导体装置制作及/或处置期间损坏的导电元件的个体或群组进行电修复且减少制作及晶片处置的成本。更具体来说,揭示组装、处置及处理包括半导体材料的晶片的方法的实施例,所述方法可在将晶片支撑于膜框架而非载体衬底上且暂时固定到所述膜框架的同时或甚至在从晶片被单个化的半导体装置未固定到任何支撑结构的同时实现焊料回焊。本发明中所描述的设备及方法还可减少或甚至消除对于昂贵耗费资源且可能损坏的载体衬底及其相关联处置及移除技术的需要。
如本发明中所使用,参考给定参数、性质或条件的术语“大体上”及“约”意指且包含所属领域的技术人员将理解的以小变化程度(例如在可接受制造公差内)满足给定参数、性质或条件的程度。举例来说,大体上或约为指定值或条件的参数可为所述指定值或条件的至少约90%、所述指定值或条件的至少约95%或甚至所述指定值或条件的至少约99%。
如本文中所使用,术语“导电元件(conductive element及electricallyconductive element)”意指且包含在介于(举例来说)约90℃与约450℃之间的温度下易受热诱导回焊的金属或金属合金材料(举例来说,焊料)。导电元件的金属或金属合金材料可处于固态中,或作为呈膏形式的粘结剂中的金属粒子团块。可在另一导电结构(例如接合垫)或者较高熔点金属材料的柱或螺柱上载运导电元件。
图1是在制作半导体装置的方法中的第一阶段期间的晶片100的透视俯视图。晶片100可包括将被进一步处理成多个半导体装置的半导体材料(例如,硅)。晶片100可具有任何形状,例如至少大体上为圆盘形或至少大体上为矩形棱柱。晶片100可包含半导体装置位置102,所述半导体装置位置可包含位于晶片100的作用表面104上方及其内的离散集成电路区域,每一离散集成电路区域通过深蚀道106而与其它区域横向分离。晶片100可经切割(即,经单个化)以形成个别半导体装置。在一些实施例中,晶片100可仅包括半导体材料且被配置为圆盘。在其它实施例中,晶片100可包括载运于(举例来说)玻璃或陶瓷面板上的半导体材料块体衬底。
在一些实施例中,可已将承载半导体装置位置102的晶片100从最初大得多的厚度(举例来说,约600μm到约750μm)薄化。举例来说,如在垂直于晶片100的作用表面104的方向上测量的晶片100的最大厚度T可为(举例来说)约250μm或更小。更具体来说,晶片100的最大厚度T可为(举例来说)介于约50μm与约250μm之间。作为特定非限制性实例,晶片100的厚度T可为介于约50μm与约70μm之间。
可将晶片100支撑于膜框架110上且暂时固定到所述膜框架。膜框架110可包含(举例来说)至少部分地横向环绕晶片100的大体上刚性外边沿112以及承载粘合剂的膜114,所述膜被固定到外边沿112以在晶片100的与作用表面104相对的非作用表面116被粘合到膜114时支撑所述晶片。
图2是在制作半导体装置的方法的第一阶段期间的晶片100′的另一实施例的透视俯视图。可将晶片100′表征为“经重构”晶片,可从所述“经重构”晶片制作扇出封装(FoP)。举例来说,晶片100′可包含位于晶片100′的部分106′内的聚合物材料(例如,环氧树脂模制材料),所述部分横向插置于先前经单个化半导体装置102′或此类半导体装置102′的群组之间。比深蚀道106宽的部分106′提供邻近于并环绕半导体装置102′的表面区,从接合垫位置延伸的迹线可延伸到所述表面区上而到达大体上较大间距处的终止处。可将此晶片100′表征为其中嵌入有离散半导体装置102′的晶片100的经重构部分106′的聚合物材料的基质。
图3是表示在制作半导体装置及/或封装的方法的第二阶段期间的图1及2的晶片100或100′的一部分的横截面侧视图。为清晰起见,如下文进一步描述的图1或图2的过程中晶片将在下文中被称为晶片100,且半导体装置位置102及半导体装置102′被称为半导体装置位置102。每一半导体装置位置102可包含以操作方式连接到半导体装置位置102的集成电路中的至少一些集成电路的接合垫108。接合垫108可包含导电材料(例如,金或银)且可(举例来说)沿着每一半导体装置位置102的中心纵向轴线定位、邻近于每一半导体装置位置102的相对侧定位或其组合。
膜框架110的膜114可包含位于膜114的与晶片100的非作用表面116相对的侧上的背衬材料118以及位于膜114的与非作用表面116接触且暂时粘合到所述非作用表面的侧上的粘合剂材料120。还可在工业中将膜114表征为“胶带”。可采用其上具有粘合剂膜的常规膜背衬材料(举例来说,聚氯乙烯、聚烯烃或聚乙烯)。作为特定非限制性实例,膜114可包括可从新泽西州莱克伍德(Lakewood,NJ)的日东公司(Nitto,Inc.)商业购得的PF-02胶带。
在一些实施例中,晶片100可被支撑于膜框架110上来替代由载体衬底122支撑。举例来说,可在晶片100由作用表面104使用真空卡盘被固持于适当位置中且接着从真空卡盘被直接转移到膜框架110上的膜114的同时,通过(举例来说)背面研磨与蚀刻的组合而将晶片100的厚度减小到其最终最大厚度T(图1)。在一些实施例中,晶片100可在整个形成、处置及处理中保持不附接到任何载体衬底122。在其它实施例中,可将晶片100最初固定到载体衬底122,且可将所述晶片在从载体衬底122移除之后仅由膜框架110支撑。举例来说,可通过粘合剂材料120将载体衬底122固定到作用表面116,可在晶片100与载体衬底122相对于彼此进行横向滑动的同时将所述粘合剂材料暴露于热以从晶片100移除载体衬底122。滑动可在晶片100由真空卡盘固持的同时发生,可将晶片100从所述真空卡盘转移到膜框架110的膜114。
在一些实施例中,可在任何后续处理(例如结合图4及5所描述的那些动作)发生之前将半导体装置位置102彼此分离。举例来说,可在半导体装置位置102保持暂时固定到膜框架110的同时使用锯124来切割穿过晶片100的介于半导体装置位置102之间的部分106(例如,沿着深蚀道)。由于经单个化半导体装置位置102在其原始位置中继续暂时附接到膜框架,因此所述经单个化半导体装置位置即使从彼此被切块仍可保持表征为晶片100。在其它实施例中,切割可在后续处理发生之后(例如在完成结合图4到9所描述的动作之后)发生。
图4是表示在制作半导体装置的方法的第三阶段期间的图3的晶片100的部分的横截面侧视图。在一些实施例(例如图4中所展示的实施例)中,可将第一模板126放置成与晶片100的作用表面104接近或接触。第一模板126可包含(举例来说)薄刚性掩模,所述薄刚性掩模覆盖晶片100的位于半导体装置位置102之间的部分106的大部分以及半导体装置位置102的未被接合垫108占用的那些部分的大部分。更具体来说,第一模板126可为具有延伸穿过第一模板126的孔128的聚合物、金属或金属合金板,孔128经定大小、经成形及经布置以至少与接合垫108大体上对准。接合垫108可包含(举例来说)所谓的“凸块下金属(underbump metallization)”(UBM),所述UBM包括数个不同金属层以增强接合垫108与焊料的接合。在其它实例中,可在接合垫108上形成(举例来说)铜的导电柱,所述柱随后被盖有焊料。在此实例中,术语“接合垫”还意指且包含导电柱。在经重构晶片用于形成FoP的情形中,在将半导体装置位置102单个化之前,可形成导电迹线,所述导电迹线从半导体装置位置102的接合垫108延伸到位于聚合物材料上的较大间距(即,间隔)处的横向遥远接合垫(未展示)。
可通过孔128将助熔剂材料130放置到接合垫108上。第一模板126可至少大体上掩蔽晶片100中的不期望助熔剂材料130的那些部分。由于助熔剂材料130是通过孔128而被放置(例如,通过喷嘴被沉积为膏),因此所述助熔剂材料可至少大体上被约束于晶片100中的期望所述助熔剂材料的那些部分(例如,接合垫108上)。助熔剂材料130可经配置以在后续处理期间减少(例如,消除)接合垫108的氧化。在其它实施例中,可省略助熔剂材料130,且可不采用第一模板126。替代地,可采用其它技术来防止氧化(例如,通过使例如氩气等覆盖气体在接合垫108上方流动),或氧化物可在形成之后被移除(例如,通过将接合垫108在甲酸中进行冲洗)。
图5是表示在制作半导体装置的方法的第四阶段期间的图3的晶片的部分的横截面侧视图。可移除第一模板126,且可将第二模板132放置成与晶片100的作用表面104接近或接触。第二模板132可包含(举例来说)薄刚性掩模,所述薄刚性掩模覆盖晶片100的位于半导体装置位置102之间的部分106的大部分以及半导体装置位置102的未被接合垫108占用的那些部分的大部分。更具体来说,第二模板132可为经选择以不与导电元件134粘合或以其它方式接合的材料(例如,不锈钢)板,所述导电元件将形成于接合垫108上且物理连接并电连接到所述接合垫。第二模板132可具有延伸穿过第二模板132的孔136,孔136经定大小、经成形及经布置以至少与接合垫108大体上对准。
可通过孔136将导电元件134放置成与接合垫108进行结构及电连接。第二模板132可至少大体上掩蔽晶片100中的不期望导电元件134的材料的那些部分。由于导电元件134是通过孔136而被放置(例如,以固体形式被放下或以离散焊料膏团块的形式被放置),因此所述导电元件可至少大体上被约束于晶片100中的期望所述导电元件的那些部分(例如,接合垫108上)。导电元件134可包含(举例来说)球、凸块或其它导电材料团块(例如,包括金属、金属合金的焊料,或者悬浮于粘结剂膏中的金属或金属合金)。在其中晶片100被切块成经单个化半导体装置位置102的实施例中,对助熔剂材料130的任选放置及对导电元件134的放置可在单个化之前发生。也就是说,图4及5中所描绘的动作可在图3中所描绘的动作之前发生。在一些此类实施例中,在对助熔剂材料130及导电元件134进行放置期间,可将晶片100暂时固定到载体衬底122(参见图3)而非膜框架110且支撑于所述载体衬底上。图6是在完成图4及5中所展示的第三及第四阶段且移除第二模板132(参见图5)之后根据前述方法所产生的晶片的部分的俯视图照片。如图6中所展示,助熔剂材料130、导电元件134的材料中的一些材料或助熔剂材料130及导电元件134的材料可往往位移超出接合垫108的既定界限且覆盖半导体装置位置102的作用表面104的部分。这些材料可腐蚀半导体装置位置102的半导体材料,此可不合意地损坏嵌入于作用表面104中的集成电路。助熔剂材料130及/或导电元件134还可吸引并保留微粒(例如,灰尘),此可不合意地磨损并损坏半导体装置位置102的集成电路。
用以减少(例如,消除)助熔剂材料130及/或导电元件134的材料的迁移的不合意效应的一种技术是根据本发明的实施例而回焊导电元件134的材料。回焊导电元件134的材料可烧尽过量助熔剂材料130,且导电元件的材料对接合垫108的润湿性可致使导电元件134的材料朝向接合垫108往回迁移。然而,用于回焊导电元件的常规技术通常涉及将包含半导体装置位置102、其它部分106及导电元件134的晶片100放置到炉中以将整个组合件暴露于高温。为实现晶片100的输送且耐受所述炉的高温,已常规地将庞大的弹性载体衬底122(参见图3)暂时固定到晶片100。载体衬底122往往制作昂贵,且将其从晶片100拆离的过程可重新引入对导电元件134的损坏。举例来说,当将载体衬底122与晶片100相对于彼此横向推动时,分离力可作用于导电元件134上,从而致使所述导电元件变形。使导电元件134变形可致使所述导电元件与作用表面104的集成电路形成电短路、展现不同高度,或者无法与作用表面104的集成电路或与另一装置或结构形成所要电连接。
图7是表示在制作半导体装置的方法的第五阶段期间的图3的晶片100的部分的横截面侧视图。为回焊导电元件134的材料,可在将晶片100支撑于由膜框架110支撑的膜114上的同时将激光束140朝向晶片100的作用表面104的区域142引导。不同于常规炉,激光束140的能量可至少大体上不会在晶片100的所有侧上被均等地吸收。而是,激光束140及激光束140产生的局部化热可集中于作用表面104上,从而使非作用表面116及下伏于非作用表面116的膜114处于比在作用表面104处所经历的温度低的温度。因此,来自激光束140的热可大体上不会损坏膜114或使膜114与晶片100之间的暂时附接降级,从而避免对导电元件134的整体炉回焊的需要及使用载体衬底的必要性。
激光束140可由激光设备144发射,所述激光设备具有(举例来说)由束成形光学器件实施的激光束140的可变长度及宽度(在晶片100的x-y平面中)参数。举例来说,由激光束140辐照的区域142的表面面积可为约1,600mm2或更小。更具体来说,由激光束140辐照的区域142的表面面积可为(举例来说)介于约1mm2与约1,600mm2之间。作为特定非限制性实例,由激光束140辐照的区域142的表面面积可为(举例来说)介于约100mm2与约1,000mm2之间、介于约100mm2与约800mm2之间或介于约400mm2与约600mm2之间。如图7中所展示,区域142的表面面积可为足够大的,使得激光束140可一次主动地辐照多于一个半导体装置位置102的导电元件134。举例来说,激光束140可一次辐照两个、四个半导体装置位置102或者两个或四个半导体装置位置102的部分,以增加可全部回焊晶片100上的导电元件134的速度。在其它实施例中,所述表面面积可为较小的,此以一半导体装置位置102、半导体装置位置102的仅一部分或甚至单个导电元件134为目标。所述表面面积可由激光设备144调整,且调整可在辐照之前发生、在辐照主动地发生的同时发生或此两者。用于控制激光设备144的操作的适合装备可从韩国京畿道城南市盆唐区板桥路62,255号支路(62,255beon-gil,Pangyo-ro,Bundang-gu,Seongnam-si,Gyeonggi-do,Korea)的科泰公司(CrucialTec)商业购得。
一种适合激光设备采用Nd:Yag晶体。激光束140发射的平均功率可为(举例来说)约120W或更小。更具体来说,激光束140发射的平均功率可为(举例来说)介于约40W与约120W之间。作为特定非限制性实例,激光束140辐照区域142的平均功率可为介于约50W与约100W之间或介于约60W与约80W之间。所述功率可由激光设备144调整,且调整可在辐照开始之前发生、在辐照主动地发生的同时发生或此两者。期望所选择波长易于由目标晶片上所采用的特定焊料吸收以使所采用的反射率及功率电平最小化。激光束140可展现处于光谱的红外或可见绿色区域中的波长。举例来说,激光束140的波长可为介于约400nm与约1.5mm之间。更具体来说,激光束140的波长可为介于约500nm与约1mm之间。作为特定非限制性实例,激光束140的波长可为介于约500nm与约900nm之间或介于约600nm与约800nm之间。用于激光设备144自身及其光学组件的适合装备可从德国米尔海姆-克尔利希的弗劳恩霍夫大街56218号(Fraunhofer Straβe 56218 Mülheim-/Germany)的利泽莱恩有限公司(Laserline GmbH)商业购得。当执行测试时,使用来自此供应商的具有1,000W的最大额定功率及约1mm的波长的激光设备144。
可将激光束140朝向区域142引导达(举例来说)约1.5秒或更少的持续时间。更具体来说,激光束140可辐照区域142达介于(举例来说)约0.1秒与约1.5秒之间。作为特定非限制性实例,激光束140可辐照区域142达介于约0.25秒与约1.25秒之间或介于约0.5秒与1秒之间。
激光144可包含温度传感器146,所述温度传感器经配置以测量并监测由激光束140辐照的区域142的至少一部分的温度。通过监测区域142或其一部分的实时温度,可实时地调整来自激光束140的辐射的强度、大小及持续时间以减小(例如,消除)辐射将损坏晶片100或膜114或者将晶片100从膜框架110的膜114拆离的可能性。温度传感器146可包含(举例来说)红外温度传感器。除调整发射的强度、大小及持续时间之外或替代调整发射的强度、大小及持续时间,激光144可以脉冲方式输送激光束140。在一些实施例中,当利用激光束140来辐照区域142时,可将第二模板132留在激光144与晶片100之间的适当位置中。第二模板132可用作散热器,所述散热器用以吸收、反射或重新引导第二模板132所覆盖的那些区域中的辐射的大部分,从而减少对膜114及晶片100的热及可能损坏,同时准许来自激光束140的辐射通过孔136而直接接达任选助熔剂材料130及导电元件134。
实例
在一个实例中,将损坏的带焊料凸块裸片暴露于来自前述利泽莱恩设备的激光束。在具有日东PF-02胶带的胶带框架上载运所述裸片。当采用单次裸片暴露(10mm x14mm)来在0.5秒的时间内以50W的激光功率及指示220℃晶片表面温度的红外温度传感器输出进行焊料凸块回焊时,未观察到任何胶带损坏。当将激光功率减小到40W且将时间增加到1.5秒时,红外温度传感器输出指示360℃晶片表面温度且观察到胶带的轻微起泡,如在图10上的B处所展示。
在另一实例中,将损坏的带焊料凸块裸片暴露于来自前述利泽莱恩设备的激光束。在具有日东PF-02胶带的胶带框架上载运所述裸片。当采用四次裸片暴露(25mm x16mm)来在0.5秒的时间内以120W的激光功率及指示265℃晶片表面温度的红外温度传感器输出进行焊料凸块回焊时,未观察到任何胶带损坏,如在图10上的ND处所展示。当将激光功率维持于120W且将时间增加到1.0秒时,红外温度传感器输出指示360℃晶片表面温度且观察到胶带透明度的稍微改变。
尽管已在施加热以进行导电元件(举例来说,焊球)的局部化回焊的上下文中描述本发明的实施例,但本发明的其它实施例同样适合于修复先前在位于载体衬底上的同时在炉中被回焊的导电元件。由于炉回焊、随后从载体衬底移除承载经回焊导电元件的晶片的过程或者由检验导致的导电元件上的压痕,因此一些导电元件可相对于公差在高度上变化、变形或与相关联接合垫部分地分离。可在晶片从载体衬底被移除并被粘合到膜框架的膜之后使用本发明的技术来选择性地回焊此类损坏的或部分分离的导电元件。可使用与控制装备的处理器相关联的机器视觉系统的高分辨率相机来增强此选择性回焊,所述控制装备控制激光设备以识别低于标准的有缺陷的导电元件及导电元件位置,使得不需要对经整体回焊晶片的大部分进行激光处理。举例来说,可对导电元件的尺寸公差及与可接受位置公差的偏差进行预编程,或可存在不可接受导电元件配置的图像及与可接受位置公差的偏差的查找表。
因此,回焊位于晶片上的导电元件的方法可涉及将激光束朝向包含半导体材料的晶片的表面的至少一个区域引导。可响应于来自激光束的所施加能量而回焊位于晶片的表面上的一或若干区域中的至少一个导电元件。
作为另一实例性实施例,回焊位于晶片上的导电元件的方法可涉及将包含半导体材料的晶片从支撑所述晶片的载体衬底拆离。可将晶片固定到膜,其中位于晶片的表面上的导电元件背对所述膜。可将激光束朝向晶片的表面的区域引导。可响应于来自激光束的所施加能量而回焊位于晶片的表面上的所述区域中的导电元件中的至少一些导电元件。
作为仍另一实例性实施例,修复位于一或多个半导体结构上的导电元件的方法可涉及将激光束朝向位于一或多个半导体结构上的先前经回焊导电元件引导,所述先前经回焊导电元件已被确定为有缺陷的。可再次回焊所述有缺陷的导电元件。
作为又另一实例性实施例,用于热处理位于半导体结构上的导电元件的系统可包含用于产生处于红外或可见绿色光谱中的激光束的设备,所述设备经配置以选择性地调整辐照的表面面积。用于控制激光束的路径的设备可以可操作方式耦合到用于产生激光束的设备。红外温度传感器可经配置以在由激光束进行辐照期间测量表面的温度。还可包含用于支撑半导体结构的膜,所述膜具有表面,所述表面在由用于产生激光束的设备产生的激光束辐照半导体结构的表面的同时承载预成形导电元件或者粘结剂中的离散导电元件材料团块中的一者。
图8是在制作半导体装置的方法的第五阶段的另一实施例期间通过图1到6的方法而产生的晶片100的部分的俯视图照片。如图8中所展示,由激光束140辐照的区域142的表面面积可至少大体上对应于单个半导体装置位置102的表面面积。在仍其它实施例中,区域142的表面面积可小于一个半导体装置位置102的表面面积,此包含一次以导电元件134(参见图7)的子集或甚至单个导电元件134(参见图7)为目标。
图9是拍摄在完成图7及8中所展示的第五阶段之后通过图1到8的方法而产生的晶片100的部分的俯视图。与图6相比,导电元件134与下伏接合垫108(参见图7)的大小及形状对准并较紧密匹配的程度是明显可见的。另外,与图6相比,助熔剂材料130的残存率减少。在一些实施例中,为进一步促进助熔剂材料130的移除,可在激光处理之后使溶剂在作用表面104上方流动。举例来说,可使水洗液在作用表面上方流动以移除至少一些剩余助熔剂材料130。
图10是通过前述方法而产生的晶片100的一部分的透视仰视图照片。如图10中所展示,当将激光束140(参见图8)朝向晶片100引导时,展示为图10中的气泡B的一些气袋可形成于膜框架110的膜114与晶片100的非作用表面116之间。然而,介于膜框架110的膜114与晶片100的非作用表面116之间的可见气泡不会导致晶片或其任何半导体装置位置102从膜框架110的完全释放。膜框架110的膜114保持能够在后续处理(例如,如先前结合图3所描述的切块,虽然其为在图7到9的动作之后进行)期间支撑晶片100且保持暂时固定到所述晶片。
图11是通过图1到10的方法而产生的半导体装置148的横截面侧视图。半导体装置148包含已从晶片100的其余部分被单个化的半导体装置位置102。半导体装置148包含位于半导体装置148的作用表面104处的接合垫108,及直接物理连接并电连接到接合垫108的导电元件134。半导体装置148可至少大体上无助熔剂材料130(参见图8)。在一些实施例中,半导体装置148可在从薄化到单个化及回焊的所有处理动作期间保持不暂时附接到载体衬底122(参见图9)。虽然将图11中所展示的半导体装置148描绘为具有单个半导体裸片,但根据本发明还可产生包含多个裸片的半导体装置148。举例来说,图2中所描绘的半导体装置位置102可经单个化以产生横向邻近半导体裸片的阵列。作为另一实例,半导体装置位置102可包含垂直堆叠的半导体裸片。
如果晶片100(参见图10)尚未被切块,那么可通过执行切块操作而产生半导体装置148。如果晶片100(参见图10)已被单个化,那么可将半导体装置148远离膜框架110(参见图10)而拉动,从而将膜框架110(参见图10)与膜114(参见图10)的暂时接合拆离。更具体来说,取放机器可抓握个别半导体装置148且将所述个别半导体装置远离膜框架(参见图10)而拉动,从而产生准备好进行进一步处理(例如,包覆模制)或者附接到另一装置或结构(例如,集成到较大封装中或附接到另一系统)的半导体装置148。
作为仍其它实施例,可在个别半导体裸片上而非在晶片层级处采用本文中所揭示的导电元件的激光驱动回焊。举例来说,可将个别半导体裸片支撑于任何下伏衬底上,而不管半导体裸片是否是暂时固定到所述下伏衬底。更具体来说,可将半导体裸片支撑于膜框架上且暂时固定到所述膜框架,或可仅将半导体裸片支撑于下伏表面上而不将半导体裸片粘合或以其它方式固定到所述表面。可接着将激光束朝向半导体裸片中的一或多者引导以回焊其导电元件。在一个实施方案中,可通过以可操作方式耦合到用于激光设备的控制装备的机器视觉系统的高分辨率相机而使安置于运送托盘中的半导体装置经受最终光学检验,且可紧接在运送之前或在额外组合件处理之前于所述托盘中修复有缺陷的导电元件。
根据本发明的处置晶片、处理晶片及回焊位于晶片上的导电元件的方法可减少(例如,消除)对载体衬底以及与移除载体衬底相关联的应力及温度的需要。另外,所揭示方法可用较廉价较易于使用的膜框架来替换较昂贵较难以使用的载体衬底。此外,所揭示方法可利用定向基于激光的能量来较高效地回焊导电元件,可在回焊期间基于所感测条件而实时地调整所述定向基于激光的能量。另外,本发明的实施例可用于对个别导电元件或导电元件群组进行后炉回焊及/或后检验修复。
本发明的实施例可增加合格率、增强产品质量、通过消除或减少使用载体衬底而减少成本、消除常规炉实施的导电元件回焊且减少晶片及半导体装置的热暴露的时间及温度。
尽管已结合各图描述特定说明性实施例,但所属领域的技术人员将认识到并了解,本发明的范围不限于本发明中明确展示及描述的那些实施例。而是,可做出对本发明中所描述的实施例的许多添加、删除及修改以产生在本发明的范围内的实施例(例如所具体主张的实施例),包含合法等效物。另外,来自一个所揭示实施例的特征可与另一所揭示实施例的特征组合,同时仍在如由发明人预期的本发明的范围内。
Claims (26)
1.一种回焊位于晶片上的导电元件的方法,其包括:
将激光束朝向包括半导体材料的晶片的表面的至少一个区域引导;及
响应于来自所述激光束的所施加能量而回焊位于所述晶片的所述表面上的所述至少一个区域中的至少一个导电元件。
2.根据权利要求1所述的方法,其进一步包括:
在引导所述激光束之前,将所述晶片放置于由膜框架支撑的膜上,其中所述晶片的承载所述至少一个导电元件的表面背对所述膜。
3.根据权利要求1所述的方法,其中将所述激光束朝向所述晶片的所述表面的所述至少一个区域引导包括将所述激光束朝向所述晶片的所述表面的所述至少一个区域引导达约1.5秒或更少。
4.根据权利要求1所述的方法,其中将所述激光束朝向所述晶片的所述表面的所述至少一个区域引导包括利用所述激光束来辐照所述至少一个区域的约1,600mm2或更小的表面面积。
5.根据权利要求4所述的方法,其进一步包括选择性地调整由所述激光束辐照的所述至少一个区域的所述表面面积以施加热来回焊一个导电元件、同时回焊位于所述晶片的单个裸片位置上的导电元件群组、同时回焊位于所述晶片的单个裸片位置上的所有所述导电元件,或同时回焊位于所述晶片的多个邻近预期位置上的所有所述导电元件。
6.根据权利要求1所述的方法,其进一步包括致使所述激光束以约120W或更小的平均功率进行发射。
7.根据权利要求1所述的方法,其中将激光束朝向所述晶片的所述表面的所述至少一个区域引导包括引导具有处于光谱的红外或可见绿色区域中的波长的激光束。
8.根据权利要求1所述的方法,其中将所述激光束朝向所述晶片的所述表面的所述至少一个区域引导包括将所述激光束朝向半导体装置位置引导,所述半导体装置位置由所述半导体材料的位于所述半导体装置位置之间的深蚀道横向分离。
9.根据权利要求1所述的方法,其中将所述激光束朝向所述晶片的所述表面的所述至少一个区域引导包括将所述激光束朝向半导体装置位置引导,所述半导体装置位置由聚合物区域横向分离。
10.根据权利要求1所述的方法,其进一步包括将所述激光束同时朝向位于所述晶片的所述表面的所述至少一个区域内的多个半导体装置位置引导。
11.根据权利要求1所述的方法,其进一步包括在将所述激光束朝向所述晶片的所述表面的所述至少一个区域引导的同时以脉冲方式输送所述激光束。
12.根据权利要求1到4及6到11中任一权利要求所述的方法,其中回焊位于所述晶片的所述表面上的所述至少一个区域中的所述至少一个导电元件包括将所述至少一个导电元件加热到约360℃或更低的温度。
13.根据权利要求1到4及6到11中任一权利要求所述的方法,其进一步包括在将所述激光束朝向所述至少一个区域引导的同时监测所述至少一个区域的至少一部分的表面温度。
14.根据权利要求1到4及6到11中任一权利要求所述的方法,其进一步包括:将具有不可由所述至少一个导电元件的处于液态中的材料湿润的材料的模板放置于所述激光束的源与所述晶片的所述表面之间,所述模板包括延伸穿过所述模板的孔,所述孔中的至少一者与所述至少一个导电元件大体上对准;以及采用所述模板作为散热器来吸收、反射或重新引导来自所述所引导激光束的热。
15.根据权利要求1到4及6到11中任一权利要求所述的方法,其中将所述激光束朝向所述晶片的所述表面的所述至少一个区域引导包括将所述激光束朝向所述至少一个区域引导,所述至少一个区域具有位于所述晶片的所述表面上的助熔剂材料。
16.根据权利要求1所述的方法,其进一步包括在所述晶片上的半导体装置位置之间将所述晶片切块。
17.根据权利要求16所述的方法,其中将所述晶片切块包括在将所述激光束朝向所述晶片的所述表面上的所述至少一个区域引导之前将所述晶片切块。
18.根据权利要求1到4及6到11中任一权利要求所述的方法,其进一步包括在引导所述激光束之前将所述晶片从载体衬底转移到由膜框架支撑的膜。
19.一种回焊位于晶片上的导电元件的方法,其包括:
将包括半导体材料的晶片从支撑所述晶片的载体衬底拆离;
将所述晶片固定到膜,其中位于所述晶片的表面上的导电元件背对所述膜;
将激光束朝向所述晶片的所述表面的区域引导;及
响应于来自所述激光束的所施加能量而回焊位于所述晶片的所述表面上的所述区域中的所述导电元件中的至少一些导电元件。
20.根据权利要求19所述的方法,其中将所述晶片固定到所述膜包括将所述晶片粘合到膜,所述膜包括聚合物背衬材料及位于所述聚合物背衬材料与所述晶片之间的粘合剂材料。
21.根据权利要求19或权利要求20所述的方法,其进一步包括:
在将所述晶片从所述载体衬底拆离之前,在所述导电元件由所述载体衬底支撑的同时于炉中回焊所述导电元件;
在将所述晶片支撑于所述膜上的同时,识别有缺陷的经回焊导电元件;及
将所述激光束朝向所述有缺陷的经回焊导电元件引导以第二次回焊所述有缺陷的导电元件。
22.一种修复位于一或多个半导体结构上的导电元件的方法,其包括将激光束朝向位于一或多个半导体结构上的先前经回焊导电元件引导,所述先前经回焊导电元件被确定为有缺陷的,从而再次回焊所述有缺陷的导电元件。
23.根据权利要求22所述的方法,其进一步包括使用机器视觉来确定所述先前经回焊导电元件为有缺陷的。
24.根据权利要求23所述的方法,其进一步包括将所述激光束朝向包括经单个化半导体裸片的所述一或多个半导体结构引导。
25.根据权利要求24所述的方法,其进一步包括在引导所述激光束之前将所述经单个化半导体裸片放置于运送托盘中。
26.一种用于热处理位于半导体结构上的导电元件的系统,所述系统包括:
用于产生处于红外或可见绿色光谱中的激光束的设备,所述设备经配置以选择性地调整辐照的表面面积;
用于控制所述激光束的路径的设备,其以可操作方式耦合到所述用于产生激光束的设备;
红外温度传感器,其经配置以在由所述激光束进行辐照期间测量表面的温度;及
膜,其用于支撑半导体结构,具有表面,所述表面在由所述用于产生激光束的设备产生的所述激光束辐照所述半导体结构的所述表面的同时承载预成形导电元件或者粘结剂中的离散导电元件材料团块中的一者。
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