CN110137083A - 阵列基板及其制备方法 - Google Patents
阵列基板及其制备方法 Download PDFInfo
- Publication number
- CN110137083A CN110137083A CN201910307251.7A CN201910307251A CN110137083A CN 110137083 A CN110137083 A CN 110137083A CN 201910307251 A CN201910307251 A CN 201910307251A CN 110137083 A CN110137083 A CN 110137083A
- Authority
- CN
- China
- Prior art keywords
- layer
- insulating layer
- decomposable
- gate metal
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 109
- 238000002360 preparation method Methods 0.000 title claims abstract description 31
- 229910052751 metal Inorganic materials 0.000 claims abstract description 68
- 239000002184 metal Substances 0.000 claims abstract description 68
- 238000010438 heat treatment Methods 0.000 claims abstract description 20
- 238000000354 decomposition reaction Methods 0.000 claims abstract description 7
- 238000005979 thermal decomposition reaction Methods 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 27
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 claims description 10
- -1 acryl Chemical group 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 4
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 claims description 3
- 239000000654 additive Substances 0.000 claims description 3
- 230000000996 additive effect Effects 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 229920002050 silicone resin Polymers 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- 239000004094 surface-active agent Substances 0.000 claims description 3
- 239000010949 copper Substances 0.000 abstract description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052802 copper Inorganic materials 0.000 abstract description 10
- 238000009792 diffusion process Methods 0.000 abstract description 8
- 230000015556 catabolic process Effects 0.000 abstract description 7
- 239000011521 glass Substances 0.000 abstract description 7
- 230000014759 maintenance of location Effects 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 7
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 238000002161 passivation Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 229910004205 SiNX Inorganic materials 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 description 3
- IUYOGGFTLHZHEG-UHFFFAOYSA-N copper titanium Chemical compound [Ti].[Cu] IUYOGGFTLHZHEG-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 229910001069 Ti alloy Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920000379 polypropylene carbonate Polymers 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004061 bleaching Methods 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (10)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910307251.7A CN110137083B (zh) | 2019-04-17 | 2019-04-17 | 阵列基板及其制备方法 |
PCT/CN2019/117677 WO2020211349A1 (zh) | 2019-04-17 | 2019-11-12 | 阵列基板及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910307251.7A CN110137083B (zh) | 2019-04-17 | 2019-04-17 | 阵列基板及其制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN110137083A true CN110137083A (zh) | 2019-08-16 |
CN110137083B CN110137083B (zh) | 2020-12-08 |
Family
ID=67570052
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910307251.7A Active CN110137083B (zh) | 2019-04-17 | 2019-04-17 | 阵列基板及其制备方法 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN110137083B (zh) |
WO (1) | WO2020211349A1 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111124176A (zh) * | 2019-12-06 | 2020-05-08 | 深圳市华星光电半导体显示技术有限公司 | 一种触控面板制程方法及触控面板 |
WO2020211349A1 (zh) * | 2019-04-17 | 2020-10-22 | Tcl华星光电技术有限公司 | 阵列基板及其制备方法 |
CN111863903A (zh) * | 2020-07-23 | 2020-10-30 | 上海天马有机发光显示技术有限公司 | 显示面板及其制作方法、显示装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050191801A1 (en) * | 2004-02-27 | 2005-09-01 | Ute Zschieschang | Method for fabricating a field effect transistor |
US20080296747A1 (en) * | 2007-05-14 | 2008-12-04 | Ando Feyh | Micromechanical component having thin-layer encapsulation and production method |
TW201205810A (en) * | 2010-06-21 | 2012-02-01 | Imec | Method of manufacturing thin film transistors and transistor circuits |
CN104362179A (zh) * | 2014-10-13 | 2015-02-18 | 京东方科技集团股份有限公司 | 一种薄膜晶体管、其制作方法、阵列基板及显示装置 |
CN104838499A (zh) * | 2011-12-13 | 2015-08-12 | 国际商业机器公司 | 石墨烯场效应晶体管 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7749820B2 (en) * | 2008-03-07 | 2010-07-06 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor, manufacturing method thereof, display device, and manufacturing method thereof |
CN110137083B (zh) * | 2019-04-17 | 2020-12-08 | 深圳市华星光电技术有限公司 | 阵列基板及其制备方法 |
-
2019
- 2019-04-17 CN CN201910307251.7A patent/CN110137083B/zh active Active
- 2019-11-12 WO PCT/CN2019/117677 patent/WO2020211349A1/zh active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050191801A1 (en) * | 2004-02-27 | 2005-09-01 | Ute Zschieschang | Method for fabricating a field effect transistor |
US20080296747A1 (en) * | 2007-05-14 | 2008-12-04 | Ando Feyh | Micromechanical component having thin-layer encapsulation and production method |
TW201205810A (en) * | 2010-06-21 | 2012-02-01 | Imec | Method of manufacturing thin film transistors and transistor circuits |
CN104838499A (zh) * | 2011-12-13 | 2015-08-12 | 国际商业机器公司 | 石墨烯场效应晶体管 |
CN104362179A (zh) * | 2014-10-13 | 2015-02-18 | 京东方科技集团股份有限公司 | 一种薄膜晶体管、其制作方法、阵列基板及显示装置 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020211349A1 (zh) * | 2019-04-17 | 2020-10-22 | Tcl华星光电技术有限公司 | 阵列基板及其制备方法 |
CN111124176A (zh) * | 2019-12-06 | 2020-05-08 | 深圳市华星光电半导体显示技术有限公司 | 一种触控面板制程方法及触控面板 |
CN111124176B (zh) * | 2019-12-06 | 2023-10-13 | 深圳市华星光电半导体显示技术有限公司 | 一种触控面板制程方法及触控面板 |
CN111863903A (zh) * | 2020-07-23 | 2020-10-30 | 上海天马有机发光显示技术有限公司 | 显示面板及其制作方法、显示装置 |
CN111863903B (zh) * | 2020-07-23 | 2023-04-18 | 武汉天马微电子有限公司 | 显示面板及其制作方法、显示装置 |
Also Published As
Publication number | Publication date |
---|---|
WO2020211349A1 (zh) | 2020-10-22 |
CN110137083B (zh) | 2020-12-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder |
Address after: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee after: TCL China Star Optoelectronics Technology Co.,Ltd. Address before: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee before: Shenzhen China Star Optoelectronics Technology Co.,Ltd. |
|
CP01 | Change in the name or title of a patent holder | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210624 Address after: No. 338, Fangzhou Road, Suzhou Industrial Park, Suzhou, Jiangsu 215000 Patentee after: Suzhou Huaxing Optoelectronic Technology Co.,Ltd. Address before: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee before: TCL China Star Optoelectronics Technology Co.,Ltd. |
|
TR01 | Transfer of patent right |