CN110085625A - Top emissive displays part and preparation method thereof - Google Patents

Top emissive displays part and preparation method thereof Download PDF

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Publication number
CN110085625A
CN110085625A CN201810628250.8A CN201810628250A CN110085625A CN 110085625 A CN110085625 A CN 110085625A CN 201810628250 A CN201810628250 A CN 201810628250A CN 110085625 A CN110085625 A CN 110085625A
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CN
China
Prior art keywords
layer
insulating layer
emissive displays
upper surface
mask
Prior art date
Application number
CN201810628250.8A
Other languages
Chinese (zh)
Inventor
史文
陈亚文
宋晶尧
付东
Original Assignee
广东聚华印刷显示技术有限公司
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Publication date
Application filed by 广东聚华印刷显示技术有限公司 filed Critical 广东聚华印刷显示技术有限公司
Priority to CN201810628250.8A priority Critical patent/CN110085625A/en
Priority claimed from PCT/CN2019/082337 external-priority patent/WO2019242384A1/en
Publication of CN110085625A publication Critical patent/CN110085625A/en

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/28Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
    • H01L27/32Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
    • H01L27/3241Matrix-type displays
    • H01L27/3244Active matrix displays
    • H01L27/3258Insulating layers formed between TFT elements and OLED elements
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/28Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
    • H01L27/32Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
    • H01L27/3241Matrix-type displays
    • H01L27/3244Active matrix displays
    • H01L27/3276Wiring lines
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/50Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
    • H01L51/56Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2251/00Indexing scheme relating to organic semiconductor devices covered by group H01L51/00
    • H01L2251/50Organic light emitting devices
    • H01L2251/53Structure
    • H01L2251/5307Structure specially adapted for controlling the direction of light emission
    • H01L2251/5315Top emission

Abstract

The present invention relates to a kind of top emissive displays parts and preparation method thereof, the top emissive displays part includes the substrate with TFT drive array, insulating layer, circuit layer, flatness layer and pixel electrode layer, insulating layer is arranged on substrate, circuit layer is embedded in a insulating layer, and the upper surface of circuit layer and the upper surface of insulating layer are substantially flush, flatness layer is arranged on insulating layer and circuit layer, and pixel electrode layer is arranged on flatness layer.Above-mentioned top emissive displays part and preparation method thereof, circuit layer is embedded in a insulating layer, and the upper surface of circuit layer and the upper surface of insulating layer are substantially flush, flatness layer can be made entirely to be arranged on insulating layer and circuit layer, better play the effect of planarization, to effectively improve the flatness of pixel electrode layer, and then improve the uniformity of luminance in top emissive displays part sub-pixel.

Description

Top emissive displays part and preparation method thereof

Technical field

The present invention relates to the field of display devicees, more particularly to a kind of top emissive displays part and preparation method thereof.

Background technique

Organic electroluminescent LED (OLED) has many advantages, such as that self-luminous, reaction is fast, visual angle is wide, brightness is high, frivolous, amount Sub- point luminescent diode (QLED) has that photochromic purity is high, luminous quantum efficiency are high, luminescent color is easily adjusted, long service life etc. is excellent Point, thus become two mains direction of studying of current display device.It is aobvious using Solution processing techniques production OLED and QLED Show device, is the important directions of the following display technology development due to having many advantages, such as low cost, high production capacity, being easily achieved large scale. Wherein, printing technology is considered as realizing the most effective approach of OLED and QLED low cost and the full-color display of large area.

Currently, since OLED display panel needs to compensate using more complicated driving circuit, in TFT backplate very Most of all driven circuits are covered, therefore cause to use the display panel aperture opening ratio of bottom emitting type device architecture smaller, into And cause power consumption increase, device lifetime relatively low;And opening for display panel can be greatly improved when using top emission type device architecture Mouthful rate avoids increasing and the problems such as device lifetime is relatively low because of power consumption caused by aperture opening ratio is too small.

However, requiring to be much higher than to the flatness of pixel electrode when preparing top emissive displays part using printing technology Vapor deposition type device, and since the pixel electrode of top emission type display panel covers driving circuit, pixel electrode lower end cabling is multiple It is miscellaneous, so that the planarization of pixel electrode is difficult.In addition, since top electrode electric conductivity is insufficient, also being needed for large scale display panel Auxiliary electrode is still further introduced, the cabling complexity of pixel electrode lower end will be further increased in this.As shown in Figure 1, current Insulating layer 120 is arranged in top emissive displays part 100 on substrate 110, and circuit layer is arranged in the upper surface of insulating layer 120 130, source including TFT, drain electrode wiring (and auxiliary electrode), although by the way that one layer of flatness layer 140 is arranged on it again but still It is difficult to planarize, leading to the pixel electrode layer 150 being arranged on the flatness layer 140, there are still the segment differences of dozens or even hundreds of nanometer (difference in height).The segment difference can cause device pixel to define 160 neutron picture of layer in the subsequent preparation OLED device using printing technology Plain (pixel) is internal, and there are apparent non-uniform light phenomenons.

Summary of the invention

Based on this, it is necessary to a kind of top emissive displays part and preparation method thereof is provided, to solve traditional top emitting Escope part pixel electrode is difficult to the problem of planarizing.

A kind of top emissive displays part, comprising:

Substrate with TFT drive array;

Insulating layer, setting is over the substrate;

Circuit layer is embedded in the insulating layer, and the upper surface base of the upper surface of the circuit layer and the insulating layer Originally it flushes;

Flatness layer is arranged on the insulating layer and the circuit layer;And

Pixel electrode layer, setting is on the flat laye.

A kind of production method of top emissive displays part, comprising the following steps:

The substrate for having TFT drive array is provided;

Insulating layer is made over the substrate;

Patterned process is carried out to the insulating layer, to be formed on the insulating layer groove;

Conductive metal is inserted in the groove, makes the upper surface of the conductive metal and the upper surface base of the insulating layer Originally it flushes, to form circuit layer in the insulating layer;

Flatness layer is made on the insulating layer and the circuit layer;

Pixel electrode layer is made on the flat laye.

Compared with prior art, the invention has the following advantages:

Above-mentioned top emissive displays part and preparation method thereof, circuit layer is embedded in a insulating layer, and circuit layer Upper surface and the upper surface of insulating layer are substantially flush, and flatness layer can be made entirely to be arranged on insulating layer and circuit layer, more preferably Ground plays the role of planarization, to effectively improve the flatness of pixel electrode layer, and then improves top emissive displays part Uniformity of luminance in pixel.

Detailed description of the invention

Fig. 1 is a kind of structural schematic diagram of traditional top emissive displays part;

Fig. 2 is the structural schematic diagram of the top emissive displays part of one embodiment of the invention;

Fig. 3 is the production structural representation of the insulating layer in the manufacturing process in top emissive displays part shown in Fig. 2 Figure;

Fig. 4 is the production structural representation of the mask layer in the manufacturing process in top emissive displays part shown in Fig. 2 Figure;

Fig. 5 is the production knot of the insulating layer further groove in the manufacturing process in top emissive displays part shown in Fig. 2 Structure schematic diagram;

Fig. 6 is the system of the whole face conductive metal deposition in the manufacturing process in top emissive displays part shown in Fig. 2 Make structural schematic diagram;

Fig. 7 is the production structure of the lift-off mask layer in the manufacturing process in top emissive displays part shown in Fig. 2 Schematic diagram;

Fig. 8 is the production structural representation of the flatness layer in the manufacturing process in top emissive displays part shown in Fig. 2 Figure;

Fig. 9 is the production structure of the pixel electrode layer in the manufacturing process in top emissive displays part shown in Fig. 2 Schematic diagram.

Specific embodiment

To facilitate the understanding of the present invention, a more comprehensive description of the invention is given in the following sections with reference to the relevant attached drawings.In attached drawing Give presently preferred embodiments of the present invention.But the invention can be realized in many different forms, however it is not limited to this paper institute The embodiment of description.On the contrary, purpose of providing these embodiments is keeps the understanding to the disclosure more thorough Comprehensively.

It should be noted that it can directly on the other element when element is referred to as " being fixed on " another element Or there may also be elements placed in the middle.When an element is considered as " connection " another element, it, which can be, is directly connected to To another element or it may be simultaneously present centering elements.

Unless otherwise defined, all technical and scientific terms used herein and belong to technical field of the invention The normally understood meaning of technical staff is identical.Term as used herein in the specification of the present invention is intended merely to description tool The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term as used herein "and/or" includes one or more phases Any and all combinations of the listed item of pass.

As shown in Fig. 2, the top emissive displays part 200 of one embodiment of the invention, including substrate 210, insulating layer 220, Circuit layer 230, flatness layer 240 and pixel electrode layer 250.

There is TFT drive array on substrate 210, for driving light emitting component, realize that image is shown.Optionally, substrate 210 can be rigid substrate or flexible substrate.Rigid substrate can be ceramic material or all kinds of glass materials etc..Flexible substrate can To be Kapton (PI) and its derivative, polyethylene naphthalate (PEN), phosphoenolpyruvate (PEP) Or diphenylene ether resin etc..TFT drive array may include non-crystalline silicon tft array, polycrystalline tft array and metal oxide Tft array etc..

Insulating layer 220 is arranged on substrate 210.Optionally, insulating layer 220 is by gate insulating layer or etch stop layer structure At SiO can be selected in materialxOr SiNxDeng.

Circuit layer 230 is embedded in the insulating layer 220, and the upper surface base of the upper surface of circuit layer 230 and insulating layer 220 Originally it flushes.Circuit layer 230 is made of conductive metal, such as Al, Cu/Mo alloy or Al/Mo alloy.An implementation wherein In example, circuit layer 230 includes source, drain electrode wiring.Further, circuit layer 230 includes source, leakage in one of the embodiments, Electrode wiring and auxiliary electrode wiring.It should be noted that the upper surface of circuit layer 230 and the upper surface of insulating layer 220, refer to , the one side far from substrate 210.The upper surface of circuit layer 230 and the upper surface of insulating layer 220 are substantially flush, and refer to circuit layer 230 upper surface and the upper level difference of insulating layer 220 are no more than the 1% of 220 thickness of insulating layer, it is preferable that circuit layer 230 Upper surface flushed with the upper surface of insulating layer 220.

Flatness layer 240 is arranged on insulating layer 220 and circuit layer 230, serves flat.In the present embodiment, flatness layer 240 be etch layer layer, while flatness layer 240 has the connection for making circuit layer 230 be connected with pixel electrode layer 250 Hole.Preferably, flatness layer 240 is with a thickness of 1 μm~2 μm, and such as 1 μm, 1.5 μm.

Pixel electrode layer 250 is arranged on flatness layer 240.In the present embodiment, pixel electrode layer 250 is flat reflection Type conductive film, as metal Ag, Al or conductor oxidate ITO are equal to the laminated construction of metal.Pixel electrode layer 250 is pattern There is the electrode layer of change area of the pattern (part for having electrode material) and white space (to remove electrode by modes such as etchings The part of material).

Further, top emissive displays part 200 further includes pixel defining layer 260, and the setting of pixel defining layer 260 has On the flatness layer 240 of patterned pixel electrode layer 250.Pixel defining layer 260 is used to limit shining for adjacent subpixels unit Region, thickness range are chosen as 800nm~1500nm.In one embodiment, the surface of pixel defining layer 260 is in lyophoby Property, to prevent the ink spilling in printing process from causing colour mixture.

Above-mentioned top emissive displays part 200, circuit layer 230 is embedded in the insulating layer 220, and circuit layer 230 Upper surface and the upper surface of insulating layer 220 are substantially flush, and can make flatness layer 240 that insulating layer 220 and circuit entirely be arranged in On layer 230, flatness layer 240 can better play the effect of planarization, to effectively improve the flat of pixel electrode layer 250 Property, and then improve the uniformity of luminance in 200 sub-pixel of top emissive displays part.

Please refer to Fig. 3~Fig. 9, the production method of above-mentioned top emissive displays part 200, comprising the following steps:

The substrate 210 for having TFT drive array is provided;

Insulating layer 220 is made on substrate 210;

Patterned process is carried out to insulating layer 220, to form groove 222 on insulating layer 220;

Conductive metal 400 is inserted in groove 222, makes the upper surface of conductive metal 400 and the upper surface base of insulating layer 220 Originally it flushes, to form circuit layer 230 in the insulating layer 220;

Flatness layer 240 is made on insulating layer 220 and circuit layer 230;

Pixel electrode layer 250 is made on flatness layer 240.

The wherein production method of the top emissive displays part 200 of a specific embodiment, comprising the following steps:

Step S1 provides the substrate 210 with TFT drive array.

Step S2, refers to Fig. 3, and insulating layer 220 is made on substrate 210.

In the present embodiment, by depositing SiO on the substrate 210 with TFT drive arrayxOr SiNxEqual materials obtain Insulating layer 220.

Step S3 makes mask layer 300 please further combined with Fig. 4 on insulating layer 220.

In the present embodiment, mask layer 300 is photoresist layer.

Step S4, refers to Fig. 4, carries out patterned process to mask layer 300.

In the present embodiment, the design configuration including source, drain electrode wiring is provided, to mask layer 300 according to the design drawing Shape is developed, and removal part mask layer 300 forms mask open area 232.

The case where increasing auxiliary electrode, is needed for large display device, is provided including source, drain electrode wiring and auxiliary The design configuration of electrode wiring develops to mask layer 300 according to the design configuration, and the removal formation of part mask layer 300 is covered Film open region 232.

Step S5 is exposure mask with the mask layer 300 of patterned processing, on insulating layer 220 please further combined with Fig. 5 It is not etched to form groove 222 by the part that mask layer 300 covers.

In the present embodiment, by laser etching technology, a part of insulating layer 220 is etched away on insulating layer 220 Groove 222 is formed, the depth of groove 222 is controlled according to the height that the source of design, drain electrode are routed (and auxiliary electrode wiring) System.

Step S6, please further combined with Fig. 6, in the side for being covered with patterned mask layer 300 of insulating layer 220, Conductive metal deposition 400 on part mask layer 300 in groove 222 and at least about groove 222 makes to be deposited in groove 222 The upper surface of conductive metal 400 and the upper surface of insulating layer 220 be substantially flush, to form circuit layer in the insulating layer 220 230。

In the present embodiment, whole face progress conductive metal deposition 400, i.e., the conductive metal deposition 400 on mask layer 300, Partially electronically conductive metal 400 falls into mask open area 232 and then enters in the groove 222 on insulating layer 220 until by insulating layer 220 On groove 222 fill and lead up to form circuit layer 230 in the insulating layer 220 so that the upper surface of insulating layer 220 and circuit layer 230 Upper surface collectively form a flat surface.Optionally, conductive metal can be selected but be not limited to Al, Cu/Mo alloy or Al/Mo alloy etc..

Step S7 removes mask layer 300 please further combined with Fig. 7, removes the extra conductive gold for surrounding groove 222 Belong to 400, the conductive metal 400 retained in groove 222 forms circuit layer 230.

In the present embodiment, mask layer 300 is removed by removing (lift-off) technique, including is deposited on mask layer The conductive metal 400 of 300 upper surfaces exposes the upper surface of insulating layer 220 and the upper table of circuit layer 230 also with removing together Face.

Step S8 makes flatness layer 240 please further combined with Fig. 8 on insulating layer 220 and circuit layer 230.

In the present embodiment, one layer of flatness layer 240 is deposited on insulating layer 220 and circuit layer 230, plays flat work With.

Step S9 makes pixel electrode layer 250 please further combined with Fig. 9 on flatness layer 240.

Specifically, in the present embodiment, borehole forms connecting hole on flatness layer 240, and makes and lead on flatness layer 240 Cross the pixel electrode layer 250 that connecting hole is electrically connected with circuit layer 230.

In the present embodiment, pixel electrode layer 250 is flat reflective conductive film, such as metal Ag, Al or semiconductor Oxide ITO is equal to the laminated construction of metal.

The production method of top emissive displays part 200 in one of the embodiments, further comprising the steps of:

Patterned process is carried out to pixel electrode layer 250, in the flatness layer 240 with patterned pixel electrode layer 250 Upper production pixel defining layer 260.

Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited In contradiction, all should be considered as described in this specification.

The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention Range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.

Claims (10)

1. a kind of top emissive displays part characterized by comprising
Substrate with TFT drive array;
Insulating layer, setting is over the substrate;
Circuit layer is embedded in the insulating layer, and the upper surface of the circuit layer and the upper surface of the insulating layer are substantially neat It is flat;
Flatness layer is arranged on the insulating layer and the circuit layer;And
Pixel electrode layer, setting is on the flat laye.
2. top emissive displays part as described in claim 1, which is characterized in that the circuit layer includes source, drain electrode cloth Line.
3. top emissive displays part as claimed in claim 2, which is characterized in that the circuit layer further includes auxiliary electrode cloth Line.
4. top emissive displays part as claimed in any one of claims 1 to 3, which is characterized in that the insulating layer is grid Insulating layer or etch stop layer.
5. a kind of production method of top emissive displays part, which comprises the following steps:
The substrate for having TFT drive array is provided;
Insulating layer is made over the substrate;
Patterned process is carried out to the insulating layer, to be formed on the insulating layer groove;
Conductive metal is inserted in the groove, keeps the upper surface of the conductive metal and the upper surface of the insulating layer substantially neat It is flat, to form circuit layer in the insulating layer;
Flatness layer is made on the insulating layer and the circuit layer;
Pixel electrode layer is made on the flat laye.
6. the production method of top emissive displays part as claimed in claim 5, which is characterized in that described to the insulating layer The method for carrying out patterned process, comprising the following steps:
Mask layer is made on the insulating layer;
Patterned process is carried out to the mask layer;
Using the mask layer of patterned processing as exposure mask, to the part not covered by the mask layer on the insulating layer into Row etching forms the groove.
7. the production method of top emissive displays part as claimed in claim 6, which is characterized in that described in the groove The method for inserting conductive metal, comprising the following steps:
In the side for being covered with the patterned mask layer of the insulating layer, in the groove and at least about described recessed Conductive metal deposition on the part mask layer of slot, is substantially flush the upper surface of conductive metal and the upper surface of the insulating layer;
The mask layer is removed, the extra conductive metal for surrounding the groove is removed, retains the conductive gold in the groove Category forms the circuit layer.
8. the production method of top emissive displays part as claimed in claim 6, which is characterized in that described to the mask layer The step of carrying out patterned process, comprising:
The design configuration being routed including source, drain electrode is provided, is developed to the mask layer according to the design configuration, is removed The part mask layer forms mask open area.
9. the production method of top emissive displays part as claimed in claim 6, which is characterized in that described to the mask layer The step of carrying out patterned process, comprising:
There is provided includes source, drain electrode is routed and the design configuration of auxiliary electrode wiring, to the mask layer according to the design drawing Shape is developed, and the removal part mask layer forms mask open area.
10. as the described in any item top emissive displays parts of claim 5~9 production method, which is characterized in that it is described The step of pixel electrode layer is made on the flatness layer, comprising:
Borehole forms connecting hole on the flat laye, and production passes through the connecting hole and the circuit on the flat laye The pixel electrode layer of layer electrical connection.
CN201810628250.8A 2018-06-19 2018-06-19 Top emissive displays part and preparation method thereof CN110085625A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201810628250.8A CN110085625A (en) 2018-06-19 2018-06-19 Top emissive displays part and preparation method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201810628250.8A CN110085625A (en) 2018-06-19 2018-06-19 Top emissive displays part and preparation method thereof
PCT/CN2019/082337 WO2019242384A1 (en) 2018-06-19 2019-04-11 Backplane structure of display panel and preparation method therefor, and top-emitting display panel

Publications (1)

Publication Number Publication Date
CN110085625A true CN110085625A (en) 2019-08-02

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1740882A (en) * 2005-09-27 2006-03-01 广辉电子股份有限公司 Array base plate for liquid crystal display and producing method thereof
CN101364572A (en) * 2007-08-10 2009-02-11 群康科技(深圳)有限公司 Thin-film transistor manufacturing method
CN102664162A (en) * 2007-03-27 2012-09-12 友达光电股份有限公司 Manufacturing method of pixel structure
CN103928475A (en) * 2014-04-10 2014-07-16 昆山龙腾光电有限公司 TFT array substrate, display panel and manufacturing method of display panel
US20160351719A1 (en) * 2015-05-28 2016-12-01 Hon Hai Precision Industry Co., Ltd. Thin film transistor and method of manufacturing same
CN107438903A (en) * 2016-08-29 2017-12-05 深圳市柔宇科技有限公司 Method for fabricating thin film transistor

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1740882A (en) * 2005-09-27 2006-03-01 广辉电子股份有限公司 Array base plate for liquid crystal display and producing method thereof
CN102664162A (en) * 2007-03-27 2012-09-12 友达光电股份有限公司 Manufacturing method of pixel structure
CN101364572A (en) * 2007-08-10 2009-02-11 群康科技(深圳)有限公司 Thin-film transistor manufacturing method
CN103928475A (en) * 2014-04-10 2014-07-16 昆山龙腾光电有限公司 TFT array substrate, display panel and manufacturing method of display panel
US20160351719A1 (en) * 2015-05-28 2016-12-01 Hon Hai Precision Industry Co., Ltd. Thin film transistor and method of manufacturing same
CN107438903A (en) * 2016-08-29 2017-12-05 深圳市柔宇科技有限公司 Method for fabricating thin film transistor

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