CN110073472B - 基板处理方法、送液方法以及基板处理装置 - Google Patents

基板处理方法、送液方法以及基板处理装置 Download PDF

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Publication number
CN110073472B
CN110073472B CN201780077433.9A CN201780077433A CN110073472B CN 110073472 B CN110073472 B CN 110073472B CN 201780077433 A CN201780077433 A CN 201780077433A CN 110073472 B CN110073472 B CN 110073472B
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China
Prior art keywords
purity rinse
low
substrate
rinse liquid
liquid
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CN201780077433.9A
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English (en)
Chinese (zh)
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CN110073472A (zh
Inventor
辻川裕贵
三浦淳靖
藤田和宏
土桥裕也
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Screen Holdings Co Ltd
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Screen Holdings Co Ltd
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Publication of CN110073472A publication Critical patent/CN110073472A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02343—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
CN201780077433.9A 2016-12-19 2017-11-07 基板处理方法、送液方法以及基板处理装置 Active CN110073472B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016-245785 2016-12-19
JP2016245785A JP6759087B2 (ja) 2016-12-19 2016-12-19 基板処理方法、送液方法、および、基板処理装置
PCT/JP2017/040102 WO2018116671A1 (ja) 2016-12-19 2017-11-07 基板処理方法、送液方法、および、基板処理装置

Publications (2)

Publication Number Publication Date
CN110073472A CN110073472A (zh) 2019-07-30
CN110073472B true CN110073472B (zh) 2023-02-28

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CN201780077433.9A Active CN110073472B (zh) 2016-12-19 2017-11-07 基板处理方法、送液方法以及基板处理装置

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Country Link
JP (1) JP6759087B2 (ja)
KR (1) KR102215990B1 (ja)
CN (1) CN110073472B (ja)
TW (1) TWI655974B (ja)
WO (1) WO2018116671A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102548824B1 (ko) * 2020-04-07 2023-06-27 세메스 주식회사 기판 처리 방법 및 기판 처리 장치

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101101858A (zh) * 2006-07-06 2008-01-09 大日本网目版制造株式会社 基板处理方法以及基板处理装置
JP2008277576A (ja) * 2007-04-27 2008-11-13 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
JP2009212407A (ja) * 2008-03-06 2009-09-17 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
JP2010067636A (ja) * 2008-09-08 2010-03-25 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2013016594A (ja) * 2011-07-01 2013-01-24 Tokyo Electron Ltd 基板洗浄方法、基板洗浄装置および記憶媒体
JP2013074114A (ja) * 2011-09-28 2013-04-22 Renesas Electronics Corp 半導体装置の製造方法および半導体装置の製造装置
CN103210476A (zh) * 2010-11-15 2013-07-17 栗田工业株式会社 硅晶片清洁方法和硅晶片清洁装置
JP2014143310A (ja) * 2013-01-24 2014-08-07 Tokyo Electron Ltd 基板処理装置、基板処理方法及び記憶媒体
JP2016042518A (ja) * 2014-08-15 2016-03-31 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001358109A (ja) 2000-06-14 2001-12-26 Semiconductor Leading Edge Technologies Inc 枚葉式洗浄装置、及びウェハ洗浄方法。

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101101858A (zh) * 2006-07-06 2008-01-09 大日本网目版制造株式会社 基板处理方法以及基板处理装置
JP2008277576A (ja) * 2007-04-27 2008-11-13 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
JP2009212407A (ja) * 2008-03-06 2009-09-17 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
JP2010067636A (ja) * 2008-09-08 2010-03-25 Dainippon Screen Mfg Co Ltd 基板処理装置
CN103210476A (zh) * 2010-11-15 2013-07-17 栗田工业株式会社 硅晶片清洁方法和硅晶片清洁装置
JP2013016594A (ja) * 2011-07-01 2013-01-24 Tokyo Electron Ltd 基板洗浄方法、基板洗浄装置および記憶媒体
JP2013074114A (ja) * 2011-09-28 2013-04-22 Renesas Electronics Corp 半導体装置の製造方法および半導体装置の製造装置
JP2014143310A (ja) * 2013-01-24 2014-08-07 Tokyo Electron Ltd 基板処理装置、基板処理方法及び記憶媒体
JP2016042518A (ja) * 2014-08-15 2016-03-31 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法

Also Published As

Publication number Publication date
TW201825199A (zh) 2018-07-16
KR20190086003A (ko) 2019-07-19
KR102215990B1 (ko) 2021-02-16
CN110073472A (zh) 2019-07-30
TWI655974B (zh) 2019-04-11
JP2018101670A (ja) 2018-06-28
WO2018116671A1 (ja) 2018-06-28
JP6759087B2 (ja) 2020-09-23

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