CN109950387A - A kind of preparation method of high-power LED - Google Patents

Abstract

The invention belongs to the field of LED technology, and in particular relates to a method for preparing a high-power LED, comprising the following steps: solid crystal, primary baking, wire bonding, lens packaging, glue injection curing, secondary baking, and welding, wherein the lens uses The resin includes the following raw materials: 1,4 cyclohexanediol, dodecanediol, phthalic anhydride, bisphenol A novolac epoxy resin, powder non-toxic phosphite, o-hydroxybenzene Phenyl formate. The high-power LED prepared by the preparation method provided by the invention has a long service life, stable light output, and is not easy to yellow, and the preparation process is simple and easy to control, and is suitable for large-scale production.

Description

A kind of preparation method of high-power LED

technical field

The invention belongs to the technical field of LEDs, and in particular relates to a preparation method of a high-power LED.

Background technique

High-power LEDs convert a large amount of electrical energy into heat energy during use, which makes the lens prone to yellowing, which makes the wavelength of light unstable. In addition, the lens is also prone to aging under long-term illumination, resulting in a shortened lifespan of high-power LEDs.

SUMMARY OF THE INVENTION

In order to overcome the shortcomings and deficiencies in the prior art, the purpose of the present invention is to provide a method for preparing a high-power LED. The high-power LED prepared by the method has a long life, stable light output, and is not easy to yellow, and the preparation process is simple and easy. control, suitable for large-scale production.

The object of the present invention is achieved through the following technical solutions:

A preparation method of a high-power LED, comprising the following steps:

(1) Die-bonding: Use die-bonding glue to fix the cut chip in the bracket;

(2) One-time baking: put it into the baking oven and bake until the solid crystal glue solidifies;

(3) Welding wire: Weld the gold wire on the electrode;

(4) Encapsulating the lens: encapsulate the chip and the bracket in the resin lens;

(5) Glue injection curing: glue the lens to the chip and the bracket with glue;

(6) Secondary baking: put into a baking oven for secondary baking, until the resin lens and the glue are cured;

(7) Welding: Weld the LED on the substrate;

Wherein, the resin used in the resin lens in step (4) includes the following raw materials in parts by weight: 15-30 parts of 1,4 cyclohexanediol, 15-30 parts of dodecacycloalkanediol, 30-60 parts of acid anhydride, 30-60 parts of bisphenol A novolac epoxy resin, 3-5 parts of powder non-toxic phosphite, 1-3 parts of phenyl o-hydroxybenzoate.

The lens prepared by the resin formula used in the invention has the characteristics of high temperature resistance, good oxidation resistance and ultraviolet resistance, so that the prepared high-power LED is resistant to yellowing, thereby prolonging the service life. In addition, the method is simple, easy to operate, suitable for mass production, and effectively reduces the production cost.

Further, the die-bonding glue in the step (1) is silver glue, and the height of the silver glue around the chip is between 1/4-1/2 of the height of the chip.

In the invention, the silver glue is arranged at 1/4-1/2 of the height around the chip, which can not only stably fix the chip, but also has good thermal conductivity, which is beneficial to prolong the service life of the LED.

Further, the baking process in the step (2) is as follows: the baking temperature is 170-175°C, and the baking time is 40min-1.5h.

The present invention adopts the above-mentioned baking conditions, so that the silver glue is sufficiently hardened and the cohesive force is strong, so that the chips can be better bonded.

Further, the temperature of the step (2) is slowly raised to the baking temperature, and the heating rate is 5-8° C./min.

The invention controls the heating rate to be 5-8 DEG C/min, which can effectively avoid the cracking of the hardener in the silver glue when the temperature rises sharply, thereby ensuring that the electrical properties of the LED do not decrease.

Further, the glue in the step (5) is epoxy resin glue, and the epoxy resin glue includes the following raw materials in parts by weight: 30-50 parts of bisphenol F epoxy resin, 15-50 parts of diaminodiphenylmethane 20 parts, 15-20 parts of m-aminomethylamine, 0.01-0.05 part of 2-ethyl-4-methylimidazole, and 0.01-0.05 part of 1-benzyl-2-methylimidazole.

The present invention uses the above-mentioned raw materials as the encapsulation glue, has strong cohesive force and good thermal stability, and can effectively prolong the service life of the LED.

Further, in the step (6), the temperature of the secondary baking is 120-135° C., and the secondary baking time is 0.5-2 h.

In the present invention, the secondary baking temperature is set to 120-135 DEG C, and the secondary baking time is 0.5-2 h, which can ensure that the glue is completely cured, has stable performance and strong cohesive force.

Further, in step (7), the substrate includes a copper substrate and an aluminum substrate welded to the bottom of the copper substrate, and the thickness ratio of the copper substrate to the aluminum substrate is (1-3):1.

In the present invention, the thickness ratio of the copper substrate to the aluminum substrate is (1-3): 1. On the one hand, it can ensure that the high-power LED conducts heat quickly, thereby effectively reducing the radiation of heat to the lens and reducing the probability of the lens becoming yellow; another invention Can reduce production costs.

Further, the welding step in step (7) uses silver-tin solder paste, and the silver-tin solder paste includes the following raw materials in parts by weight: 40-65 parts of silver; 20-40 parts of tin, and 10-15 parts of dipropanol parts, 3-5 parts of nano-silica, and 1-3 parts of calcium propionate.

The invention adopts silver-tin solder paste as the solder, so that the LED is welded firmly and has good anticorrosion performance, and the life of the high-power LED can be effectively prolonged.

Further, the nano-silica is a mixture of 5-20nm particles and 20-40nm particles in a ratio of 1:(1-3).

The present invention uses the above-mentioned mixture, so that the silver-tin solder paste has strong cohesive force, good moisture-proof and anti-mildew effects, good rheology of the silver-tin solder paste, and improved welding performance.

Further, the preparation steps of the aluminum substrate include (A) punching the pure aluminum plate to a predetermined thickness; (B) performing black oxidation treatment on the punched aluminum plate to obtain the aluminum substrate.

The aluminum substrate has enhanced corrosion resistance after black oxidation treatment, which can ensure that the thermal conductivity of the substrate remains unchanged, thereby increasing the service life of the high-power LED.

Further, the step of black oxidation treatment in the step (B) is: after the aluminum plate is loaded into the fixture, degreasing, alkali etching, water washing, drying, anodizing, electrolytic coloring, and sealing treatment are performed. The electrolytic coloring solution used includes the following components, 10-15g/L pure sulfuric acid, 15-25g/L stannous sulfate, 0.1-0.3g/L ethylenediaminetetraacetic acid, 20-25g/L boric acid and electrolyte.

The present invention adopts the above electrolytic coloring solution, which has uniform coloring, bright color, small color difference, good reproducibility, strong oxidation resistance and good corrosion resistance.

The beneficial effects of the present invention are: the high-power LED prepared by the preparation method provided by the present invention has a long life, stable light output, and is not easy to yellow, and the preparation process is simple and easy to control, and is suitable for large-scale production.

Detailed ways

In order to facilitate the understanding of those skilled in the art, the present invention will be further described below with reference to the examples, and the contents mentioned in the embodiments are not intended to limit the present invention.

Example 1,

A preparation method of a high-power LED, comprising the following steps:

(1) Die-bonding: Use die-bonding glue to fix the cut chip in the bracket;

(2) One-time baking: put it into the baking oven and bake until the solid crystal glue solidifies;

(3) Welding wire: Weld the gold wire on the electrode;

(4) Encapsulating the lens: encapsulate the chip and the bracket in the resin lens;

(5) Glue injection curing: glue the lens to the chip and the bracket with glue;

(6) Secondary baking: put into a baking oven for secondary baking, until the resin lens and the glue are cured;

(7) Welding: Weld the LED on the substrate;

Wherein, the resin used in the resin lens described in step (4) includes the following raw materials in parts by weight: 15 parts of 1,4 cyclohexanediol, 30 parts of dodecacycloalkanediol, 45 parts of phthalic anhydride, 50 parts of bisphenol A novolac epoxy resin, 3 parts of powder non-toxic phosphite, and 1 part of phenyl o-hydroxybenzoate.

Further, the die-bonding glue in the step (1) is silver glue, and the height of the silver glue around the chip is 1/4 of the height of the chip.

Further, the baking process in the step (2) is as follows: the baking temperature is 170° C., and the baking time is 1.5h.

Further, the temperature of the step (2) is slowly raised to the baking temperature, and the heating rate is 5°C/min.

Further, the glue in the step (5) is epoxy resin glue, and the epoxy resin glue includes the following raw materials in parts by weight: 30 parts of bisphenol F epoxy resin, 15 parts of diaminodiphenylmethane, 15 parts of aminomethylamine, 0.01 part of 2-ethyl-4-methylimidazole, and 0.01 part of 1-benzyl-2-methylimidazole.

Further, in the step (6), the temperature of the secondary baking is 120° C., and the secondary baking time is 2 h.

Further, in step (7), the substrate includes a copper substrate and an aluminum substrate welded on the bottom of the copper substrate, and the thickness ratio of the copper substrate to the aluminum substrate is 1:1.

Further, the welding step described in step (7) uses silver-tin solder paste, and the silver-tin solder paste includes the following raw materials in parts by weight: 40 parts of silver; 20 parts of tin, 10 parts of dipropanol, and nano-silica 3 parts, 1 part calcium propionate.

Further, the preparation steps of the aluminum substrate include (A) punching the pure aluminum plate to a predetermined thickness; (B) performing black oxidation treatment on the punched aluminum plate to obtain the aluminum substrate.

Further, the step of black oxidation treatment in the step (B) is: after the aluminum plate is loaded into the fixture, degreasing, alkali etching, water washing, drying, anodizing, electrolytic coloring, and sealing treatment are performed. The electrolytic coloring solution used included the following components: 10 g/L pure sulfuric acid, 15 g/L stannous sulfate, 0.1 g/L EDTA, 20 g/L boric acid and electrolyzed water.

Example 2,

The difference between Example 2 and Example 1 is that,

The resin used in the resin lens described in step (4) includes the following raw materials in parts by weight: 30 parts of 1,4 cyclohexanediol, 30 parts of dodecacycloalkanediol, 60 parts of phthalic anhydride, bisphenol 60 parts of A-type novolac epoxy resin, 5 parts of powder non-toxic phosphite, and 3 parts of phenyl o-hydroxybenzoate.

Further, the die-bonding glue in the step (1) is silver glue, and the height of the silver glue around the chip is 1/2 of the height of the chip.

Further, the baking process in the step (2) is as follows: the baking temperature is 175° C., and the baking time is 40 minh.

Example 3

The difference between Example 3 and Example 1 is: the glue in the step (5) is epoxy resin glue, and the epoxy resin glue includes the following raw materials in parts by weight: 50 parts of bisphenol F epoxy resin, diamino 20 parts of diphenylmethane, 20 parts of m-aminomethylamine, 0.05 part of 2-ethyl-4-methylimidazole, and 0.05 part of 1-benzyl-2-methylimidazole.

Further, in the step (6), the temperature of the secondary baking is 135° C., and the secondary baking time is 0.5 h.

Further, in step (7), the substrate includes a copper substrate and an aluminum substrate welded to the bottom of the copper substrate, and the thickness ratio of the copper substrate to the aluminum substrate is 3:1.

Further, the welding step described in step (7) uses silver-tin solder paste, and the silver-tin solder paste includes the following raw materials in parts by weight: 65 parts of silver; 40 parts of tin, 15 parts of dipropanol, and nano-silicon dioxide. 5 parts, 3 parts calcium propionate.

Example 4,

The difference between Example 4 and Example 1 is:

Further, the glue in the step (5) is epoxy resin glue, and the epoxy resin glue includes the following raw materials in parts by weight: 40 parts of bisphenol F type epoxy resin, 20 parts of diaminodiphenylmethane, m 20 parts of aminomethylamines, 0.03 parts of 2-ethyl-4-methylimidazole, and 0.03 parts of 1-benzyl-2-methylimidazole.

Further, in the step (6), the temperature of the secondary baking is 125° C., and the secondary baking time is 1 h.

Further, in step (7), the substrate includes a copper substrate and an aluminum substrate welded to the bottom of the copper substrate, and the thickness ratio of the copper substrate to the aluminum substrate is 2:1.

Further, the welding step described in step (7) uses silver-tin solder paste, and the silver-tin solder paste includes the following raw materials in parts by weight: 40 parts of silver; 40 parts of tin, 15 parts of dipropanol, and nano-silica 5 parts, 3 parts calcium propionate.

Further, the preparation steps of the aluminum substrate include (A) punching the pure aluminum plate to a predetermined thickness; (B) performing black oxidation treatment on the punched aluminum plate to obtain the aluminum substrate.

Further, the step of black oxidation treatment in the step (B) is: after the aluminum plate is loaded into the fixture, degreasing, alkali etching, water washing, drying, anodizing, electrolytic coloring, and sealing treatment are performed. The electrolytic coloring solution used included the following components: 15 g/L pure sulfuric acid, 25 g/L stannous sulfate, 0.3 g/L EDTA, 25 g/L boric acid and electrolyzed water.

The high-power LED prepared by the above-mentioned embodiment is tested for performance, and the test results are as follows:

Table 1:

Technical indicators Example 1 Example 2 Example 3 Example 4 Luminous efficiency (lm/W) 200 200 200 200 Luminous flux (lm/lamp) 1500 1500 1500 1500 1500(khr) Lens Color no yellowing no yellowing no yellowing no yellowing

From the data in Table 1, it can be concluded that the prepared high-power LED prepared by the present invention has stable quality, long life, stable light output, and is not prone to yellowing.

The above-mentioned embodiment is the preferred implementation scheme of the present invention, but the present invention is not limited to the above-mentioned detailed raw material ratio and specific operation method, and any obvious replacement without departing from the concept of the present invention is within the protection scope of the present invention. .

Claims (10)

1. a preparation method of high-power LED, is characterized in that: comprise the steps: (1) Die-bonding: Use die-bonding glue to fix the cut chip in the bracket; (2) One-time baking: put it into the baking oven and bake until the solid crystal glue solidifies; (3) Welding wire: Weld the gold wire on the electrode; (4) Encapsulating the lens: encapsulate the chip and the bracket in the resin lens; (5) Glue injection curing: glue the lens to the chip and the bracket with glue; (6) Secondary baking: put into a baking oven for secondary baking, until the resin lens and the glue are cured; (7) Welding: Weld the LED on the substrate; Wherein, the resin used in the resin lens in step (4) includes the following raw materials in parts by weight: 15-30 parts of 1,4 cyclohexanediol, 15-30 parts of dodecacycloalkanediol, 30-60 parts of acid anhydride, 30-60 parts of bisphenol A novolac epoxy resin, 3-5 parts of powder non-toxic phosphite, 1-3 parts of phenyl o-hydroxybenzoate. 2 . The method for preparing a high-power LED according to claim 1 , wherein the die-bonding glue in the step (1) is silver glue, and the height of the silver glue around the chip is 1/4 of the height of the chip. 3 . between -1/2. 3 . The method for preparing a high-power LED according to claim 2 , wherein the baking process in the step (2) is: the baking temperature is 170-175° C., and the baking time is 40min-1.5h. 4 . 4 . The method for preparing a high-power LED according to claim 3 , wherein the temperature of the step (2) is slowly raised to the baking temperature, and the heating rate is 5-8° C./min. 5 . 5. The method for preparing a high-power LED according to claim 1, wherein the glue in the step (5) is epoxy resin glue, and the epoxy resin glue comprises the following raw materials in parts by weight: bisphenol F 30-50 parts of epoxy resin, 15-20 parts of diaminodiphenylmethane, 15-20 parts of m-aminomethylamine, 0.01-0.05 parts of 2-ethyl-4-methylimidazole and 1-benzyl-2 -0.01-0.05 part of methylimidazole. 6 . The method for preparing a high-power LED according to claim 5 , wherein the temperature of the secondary baking in the step (6) is 120-135° C., and the secondary baking time is 0.5-2 h. 7 . 7. The preparation method of high-power LED as claimed in claim 1, characterized in that: in step (7), the substrate comprises a copper substrate and an aluminum substrate welded to the bottom of the copper substrate, and the thickness ratio of the copper substrate to the aluminum substrate is ( 1-3): 1. 8. The method for preparing a high-power LED according to claim 7, wherein the welding step in step (7) uses silver-tin solder paste, and the silver-tin solder paste comprises the following raw materials in parts by weight: silver 40 -65 parts; 20-40 parts of tin, 10-15 parts of dipropanol, 3-5 parts of nano-silica, and 1-3 parts of calcium propionate. 9 . The method for preparing a high-power LED according to claim 7 , wherein the preparation step of the aluminum substrate comprises (A) punching a pure aluminum plate into a predetermined thickness; (B) black-oxidizing the punched aluminum plate An aluminum substrate is obtained. 10. The preparation method of high-power LED as claimed in claim 9, characterized in that: in the step (B), the step of black oxidation treatment is: after the aluminum plate is loaded into the fixture, degreasing, alkali etching, water washing, and drying are carried out. , anodizing, electrolytic coloring, sealing treatment, the electrolytic coloring solution used in the electrolytic coloring process includes the following components, 10-15g/L pure sulfuric acid, 15-25g/L stannous sulfate, 0.1-0.3g/L L of ethylenediaminetetraacetic acid, 20-25g/L of boric acid and electrolyzed water.