CN109904289A - LED and preparation method thereof based on superlattices potential barrier quantum well structure - Google Patents
LED and preparation method thereof based on superlattices potential barrier quantum well structure Download PDFInfo
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- 238000005036 potential barrier Methods 0.000 title claims abstract description 30
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 239000010410 layer Substances 0.000 claims abstract description 197
- 230000004888 barrier function Effects 0.000 claims abstract description 54
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 29
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 24
- 239000010980 sapphire Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000012792 core layer Substances 0.000 claims abstract description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 66
- 229910052757 nitrogen Inorganic materials 0.000 claims description 33
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 27
- 239000012159 carrier gas Substances 0.000 claims description 27
- 229910052733 gallium Inorganic materials 0.000 claims description 27
- 239000011777 magnesium Substances 0.000 claims description 24
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 18
- 229910052749 magnesium Inorganic materials 0.000 claims description 18
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 18
- 229910052738 indium Inorganic materials 0.000 claims description 10
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 claims description 9
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 3
- 230000006911 nucleation Effects 0.000 claims description 3
- 238000010899 nucleation Methods 0.000 claims description 3
- 230000009467 reduction Effects 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 238000002347 injection Methods 0.000 abstract description 4
- 239000007924 injection Substances 0.000 abstract description 4
- 230000006798 recombination Effects 0.000 abstract description 3
- 238000005215 recombination Methods 0.000 abstract description 3
- 230000005855 radiation Effects 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 239000000243 solution Substances 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000005701 quantum confined stark effect Effects 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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Abstract
The present invention provides a kind of LED and preparation method thereof based on superlattices potential barrier quantum well structure, belongs to technical field of semiconductors.It include: Sapphire Substrate；GaN forming core layer above Sapphire Substrate；Undoped GaN layer above GaN forming core layer；N-type GaN layer above undoped GaN layer；Quantum well region above n-type GaN layer, quantum well region include first area and the second area in 3~10 periods in 8~15 periods from bottom to up, and first area includes the superlattices Al in 3~10 periods set from bottom to upxInyGa1‑x‑yN/GaN barrier layer and InGaN potential well layer, second area include the Al in 3~10 periodsxInyGa1‑x‑yN/GaN barrier layer；P-type AlGaN electronic barrier layer above second area；P-type GaN layer above p-type AlGaN electronic barrier layer；Contact electrode layer above p-type GaN layer.The embodiment of the present invention improves the injection efficiency of electrons and holes and increases the constraint ability to electronics, reduces electronics leakage, increases the radiation recombination efficiency of electrons and holes.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of LED based on superlattices potential barrier quantum well structure and
Preparation method.
Background technique
Currently, LED (Light Emitting Diode, light emitting diode) has become the important composition portion of energy-saving illumination
Point, it is substituted traditional incandescent lamp and fluorescent lamp bulb in many places, the extensive concern by various countries scientific and technical personnel.Through passing away
The effort of various countries, boundary is studied, and the luminous efficiency of present LED has significantly improved.
Current LED include Sapphire Substrate, GaN forming core layer, undoped with type GaN layer, n-type GaN layer, GaN (AlGaN)/
The quantum well region InGaN, p-type AlGaN electronic barrier layer, p-type GaN layer and contact electrode layer.Although the LED of this structure is to LED
Luminous efficiency improve, but the high indium content in this kind of quantum well region structure LED can not only generate a large amount of mismatches
Dislocation and very big piezoelectric polarization effect also make quantum well layer and increase with the lattice mismatch of barrier layer；Also increase simultaneously
Electronics leakage rate, to improve non-radiative recombination probability, thus reduces internal quantum efficiency and luminous efficiency.
The conventional method of raising LED internal quantum efficiency and luminous efficiency has doping GaN potential barrier and quantum well region potential well is super
The method of lattice structure.Although these methods are added to superlattices potential well layer in traditional quantum well structure, to a certain extent
Reduce lattice mismatch, while also increasing the injection efficiency in hole in Quantum Well, hole concentration increases, to improve interior amount
Sub- efficiency, is very significantly improved luminous efficiency, but there is no the leakages for reducing electronics in Quantum Well.In addition, though passing
The AlGaN potential barrier of system can provide higher potential barrier to limit the leakage of carrier in Quantum Well.However, due to AlGaN/
Lattice mismatch ratio GaN/InGaN's between InGaN is big, and therefore, AlGaN potential barrier can generate stronger pole in the active areas
Change effect, the Quantum Confined Stark effect enhancing of LED component, wavelength temperature is deteriorated.
Summary of the invention
In order to solve the problems, such as that current LED is low there are the injection efficiency in the hollow cave of active layer and electronics leakage is high, this hair
It is bright that a kind of LED and preparation method thereof based on superlattices potential barrier quantum well structure is provided.
In order to solve the above technical problems, the technical solution adopted by the present invention is that:
A kind of LED based on superlattices potential barrier quantum well structure comprising:
Sapphire Substrate；The GaN forming core layer being set to above Sapphire Substrate；It is set to not mixing above GaN forming core layer
Miscellaneous GaN layer；The n-type GaN layer being set to above undoped GaN layer；It is set to the quantum well region above n-type GaN layer, it is described
Quantum well region includes first area and the second area in 3~10 periods in 8~15 periods from bottom to up, and the first area includes
The superlattices Al in 3~10 periods being arranged from bottom to upxInyGa1-x-yN/GaN barrier layer and InGaN potential well layer, secondth area
Domain includes the Al in 3~10 periodsxInyGa1-x-yN/GaN barrier layer；The p-type AlGaN electronic blocking being set to above second area
Layer；The p-type GaN layer being set to above p-type AlGaN electronic barrier layer；The contact electrode layer being set to above p-type GaN layer.
Optionally, the n-type GaN layer is the n-type GaN layer of Si doping.
Optionally, the p-type GaN layer is the p-type GaN layer of Mg doping.
Optionally, the Sapphire Substrate with a thickness of 300~400 μm；The GaN forming core layer with a thickness of 20~
30nm；The undoped GaN layer with a thickness of 1.5~2.5 μm；The n-type GaN layer with a thickness of 1~2 μm；Each period
Superlattices AlxInyGa1-x-ySuperlattices Al in N/GaN barrier layerxInyGa1-x-yN barrier layer with a thickness of 3~10nm, superlattices
GaN layer with a thickness of 3~10nm, the InGaN potential well layer with a thickness of 3~10nm；The p-type AlGaN electronic barrier layer
With a thickness of 40~80nm；The p-type GaN layer with a thickness of 200~300nm；The contact electrode layer with a thickness of 50~
100nm。
Optionally, the superlattices AlxInyGa1-x-yIn N/GaN barrier layer, 0 < x < 0.5,0 < y < 0.5, and from N-shaped GaN
The numerical value of layer to p-type AlGaN electronic barrier layer direction x are incremented by, the number decrements of y.
A kind of preparation method of the LED based on superlattices potential barrier quantum well structure comprising:
S1, at a temperature of 900~1200 DEG C, in H2Impurity first is carried out to the surface of patterned Sapphire Substrate in atmosphere
Or 300~500s of reduction treatment of oxide, then to treated, sapphire substrate surface carries out nitrogen treatment, obtains blue treasured
Stone lining bottom；
S2 uses trimethyl gallium for gallium source, NH3For nitrogen source, H2For carrier gas, the growth temperature for controlling reaction chamber is 400~
900 DEG C, growth time be 100~200s, pressure is 500~700mbar, the growth of sapphire substrate surface after nitrogen treatment
Initial GaN nucleating layer, and 150~250s of initial GaN nucleating layer annealing is formed under conditions of temperature is 1000~1200 DEG C
GaN nucleating layer；
S3 uses trimethyl gallium for gallium source, NH3For nitrogen source, H2For carrier gas, the growth temperature for controlling reaction chamber is 1000~
1200 DEG C, growth time be 3400~3800s, pressure is 500~700mbar, GaN nucleation layer surface growth it is undoped
GaN layer；
S4 uses trimethyl gallium for gallium source, SiH4For silicon source, NH3For nitrogen source, H2For carrier gas, the growth temperature of reaction chamber is controlled
Degree is 1000~1200 DEG C, growth time is 1700~1900s, pressure is 500~700mbar, on undoped GaN layer surface
Grow the n-type GaN layer of Si doping；
S5, including 5.1,5.2 and 5.3；5.1, use triethyl-gallium for gallium source, trimethyl aluminium is silicon source, and TMln is indium source,
NH3For nitrogen source, N2For carrier gas, the growth temperature for controlling reaction chamber is 800~900 DEG C, growth time is 200~400s, pressure is
300~500mbar grows superlattices Al on n-type GaN layer surfacexInyGa1-x-yN barrier layer；5.2, use triethyl-gallium for gallium source,
NH3For nitrogen source, N2For carrier gas, the growth temperature for controlling reaction chamber is 800~900 DEG C, growth time is 250~350s, pressure is
300~500mbar, in superlattices AlxInyGa1-x-ySuperlattices GaN layer is grown in N barrier layer；5.3, it repeats 3~10 times 5.1
With 5.2；
S6, using triethyl-gallium as gallium source, TMln is indium source, NH3For nitrogen source, N2For carrier gas, the growth temperature of reaction chamber is controlled
For 700~800 DEG C, growth time be 150~250s, pressure is 300~500mbar, on the superlattices GaN layer surface of top layer
Grow InGaN potential well layer；
S7 repeats 8~15 S5 and S6；
S8 continues 3~10 times 5.1 and 5.2 in the InGaN potential well layer surface of top layer, obtains quantum well region；
S9 uses trimethyl gallium for gallium source, and trimethyl aluminium is silicon source, and two luxuriant magnesium are magnesium source, NH3For nitrogen source, N2For carrier gas,
The growth temperature for controlling reaction chamber is 900~1000 DEG C, growth time is 250~350s, pressure is 100~300mbar, is being measured
Sub- well region surface grows p-type AlGaN electronic barrier layer；
S10 uses trimethyl gallium for gallium source, and two luxuriant magnesium are magnesium source, NH3For nitrogen source, N2For carrier gas, the life of reaction chamber is controlled
Long temperature is 900~1000 DEG C, growth time is 2500~3500s, pressure is 200~400mbar, is hindered in p-type AlGaN electronics
Barrier surface grows the p-type GaN layer of Mg doping；
S11 uses trimethyl gallium for gallium source, and TMln is indium source, and two luxuriant magnesium are magnesium source, NH3For nitrogen source, N2For carrier gas, control
The growth temperature of reaction chamber is 500~800 DEG C, growth time is 100~200s, pressure is 200~400mbar, in p-type GaN
Layer surface grows contact electrode layer；
S12, N of the structure that step S11 is obtained at a temperature of 600~700 DEG C2Anneal 800~1000s in atmosphere, so
After be down to room temperature, obtain the LED based on superlattices potential barrier quantum well structure.
Optionally, the Sapphire Substrate with a thickness of 300~400 μm；The GaN forming core layer with a thickness of 20~
30nm；The undoped GaN layer with a thickness of 1.5~2.5 μm；The n-type GaN layer with a thickness of 1~2 μm；Each period
Superlattices AlxInyGa1-x-ySuperlattices Al in N/GaN barrier layerxInyGa1-x-yN barrier layer with a thickness of 3~10nm, superlattices
GaN layer with a thickness of 3~10nm, the InGaN potential well layer with a thickness of 3~10nm；The p-type AlGaN electronic barrier layer
With a thickness of 40~80nm；The p-type GaN layer with a thickness of 200~300nm；The contact electrode layer with a thickness of 50~
100nm。
Optionally, the superlattices AlxInyGa1-x-yIn N/GaN barrier layer, 0 < x < 0.5,0 < y < 0.5, and from N-shaped GaN
The numerical value of layer to p-type AlGaN electronic barrier layer direction x are incremented by, the number decrements of y.
All the above alternatives can any combination, the present invention not to one by one combine after structure carry out specifically
It is bright.
The technical solution that the embodiment of the present invention provides can include the following benefits:
The present invention is by being arranged the of first area and 3~10 periods that quantum well region included 8~15 periods from bottom to up
Two regions, and first area includes the superlattices Al in 3~10 periods being arranged from bottom to upxInyGa1-x-yN/GaN barrier layer and
InGaN potential well layer, second area include the Al in 3~10 periodsxInyGa1-x-yN/GaN barrier layer can not only reduce quantum well region
In a large amount of misfit dislocations are generated due to high In content, and the barrier layer construction can also improve conduction band band rank and reduce low potential barrier
Valence-band Offsets reduce electronics to improve the injection efficiency of electrons and holes and increase to the constraint ability of electronics and let out
Leakage, increases the radiation recombination efficiency of electrons and holes, to improve the internal quantum efficiency of LED, while also improving LED device
The luminous efficiency of part.By using AlxInyGa1-x-yN/GaN superlattices barrier layer, it can not only be effectively reduced active layer
Trap builds the lattice mismatch at interface, reduces crystal defect, moreover it is possible to improve the piezoelectric polarization effect generated due to lattice mismatch, subtract
The weak Quantum Confined Stark effect of LED component, improves wavelength temperature.
Detailed description of the invention
The drawings herein are incorporated into the specification and forms part of this specification, and shows and meets implementation of the invention
Example, and be used to explain the principle of the present invention together with specification.
Fig. 1 is the structural schematic diagram of the LED provided in an embodiment of the present invention based on superlattices potential barrier quantum well structure.
Specific embodiment
With reference to the accompanying drawings and examples, specific embodiments of the present invention will be described in further detail.
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
As shown in Figure 1, the LED provided in an embodiment of the present invention based on superlattices potential barrier quantum well structure includes sapphire lining
Bottom 1；The GaN forming core layer 2 being set to above Sapphire Substrate 1；The undoped GaN layer 3 being set to above GaN forming core layer 2；If
The n-type GaN layer 4 being placed in above undoped GaN layer 3；It is set to the quantum well region above n-type GaN layer 4, the quantum well region
The second area 6 in the period of first area 5 and 3~10 including 8~15 periods from bottom to up, the first area 5 includes under
The superlattices Al in 3~10 periods of supreme settingxInyGa1-x-yN/GaN barrier layer 7 and InGaN potential well layer 8, the second area
6 include the Al in 3~10 periodsxInyGa1-x-yN/GaN barrier layer 7；The p-type AlGaN electronic blocking being set to above second area 6
Layer 9；The p-type GaN layer 10 being set to above p-type AlGaN electronic barrier layer 9；The electrode contact being set to above p-type GaN layer 10
Layer 11.
Optionally, the n-type GaN layer 4 is the n-type GaN layer of Si doping；The p-type GaN layer 10 is the p-type GaN of Mg doping
Layer.
Wherein, the Sapphire Substrate 1 with a thickness of 300~400 μm (preferably 350 μm)；The GaN forming core layer 2
With a thickness of 20~30nm；The undoped GaN layer 3 with a thickness of 1.5~2.5 μm；Described N-shaped GaN4 layers with a thickness of 1~2
μm；The superlattices Al in each periodxInyGa1-x-ySuperlattices Al in N/GaN barrier layer 7xInyGa1-x-yN barrier layer with a thickness of 3~
10nm, superlattices GaN layer with a thickness of 3~10nm, the InGaN potential well layer 8 with a thickness of 3~10nm；The p-type AlGaN
Electronic barrier layer 9 with a thickness of 40~80nm；The p-type GaN layer 10 with a thickness of 200~300nm；The contact electrode layer 11
With a thickness of 50~100nm.It should be noted that Fig. 1 be only used for illustrating it is provided in an embodiment of the present invention based on superlattices potential barrier
The thickness of the composed structure of the LED of quantum well structure, each layer shown in FIG. 1 does not represent the actual (real) thickness of each layer.
Optionally, the superlattices AlxInyGa1-x-yIn N/GaN barrier layer 7,0 < x < 0.5,0 < y < 0.5, and from N-shaped GaN
The numerical value of layer 4 to 9 layers of direction x of p-type AlGaN electronic blocking are incremented by, the number decrements of y, to improve the energy band height of potential barrier, reduce
Electronics leakage.
The preparation method of the above-mentioned LED based on superlattices potential barrier quantum well structure comprising following steps S1 to S12:
S1, at a temperature of 900~1200 DEG C, in H2Impurity first is carried out to the surface of patterned Sapphire Substrate in atmosphere
Or 300~500s of reduction treatment of oxide, then to treated, sapphire substrate surface carries out nitrogen treatment, obtains blue treasured
Stone lining bottom.
S2 uses trimethyl gallium for gallium source, NH3For nitrogen source, H2For carrier gas, the growth temperature for controlling reaction chamber is 400~
900 DEG C, growth time be 100~200s, pressure is 500~700mbar, the growth of sapphire substrate surface after nitrogen treatment
Initial GaN nucleating layer, and 150~250s of initial GaN nucleating layer annealing is formed under conditions of temperature is 1000~1200 DEG C
GaN nucleating layer.
S3 uses trimethyl gallium for gallium source, NH3For nitrogen source, H2For carrier gas, the growth temperature for controlling reaction chamber is 1000~
1200 DEG C, growth time be 3400~3800s, pressure is 500~700mbar, GaN nucleation layer surface growth it is undoped
GaN layer.
S4 uses trimethyl gallium for gallium source, SiH4For silicon source, NH3For nitrogen source, H2For carrier gas, the growth temperature of reaction chamber is controlled
Degree is 1000~1200 DEG C, growth time is 1700~1900s, pressure is 500~700mbar, on undoped GaN layer surface
Grow the n-type GaN layer of Si doping.
S5, including 5.1,5.2 and 5.3；5.1, use triethyl-gallium for gallium source, trimethyl aluminium is silicon source, and TMln is indium source,
NH3For nitrogen source, N2For carrier gas, the growth temperature for controlling reaction chamber is 800~900 DEG C, growth time is 200~400s, pressure is
300~500mbar grows superlattices Al on n-type GaN layer surfacexInyGa1-x-yN barrier layer；5.2, use triethyl-gallium for gallium source,
NH3For nitrogen source, N2For carrier gas, the growth temperature for controlling reaction chamber is 800~900 DEG C, growth time is 250~350s, pressure is
300~500mbar, in superlattices AlxInyGa1-x-ySuperlattices GaN layer is grown in N barrier layer；5.3, it repeats 3~10 times 5.1
With 5.2.
S6, using triethyl-gallium as gallium source, TMln is indium source, NH3For nitrogen source, N2For carrier gas, the growth temperature of reaction chamber is controlled
For 700~800 DEG C, growth time be 150~250s, pressure is 300~500mbar, on the superlattices GaN layer surface of top layer
Grow InGaN potential well layer.
S7 repeats 8~15 S5 and S6.
S8 continues 3~10 times 5.1 and 5.2 in the InGaN potential well layer surface of top layer, obtains quantum well region.
S9 uses trimethyl gallium for gallium source, and trimethyl aluminium is silicon source, and two luxuriant magnesium are magnesium source, NH3For nitrogen source, N2For carrier gas,
The growth temperature for controlling reaction chamber is 900~1000 DEG C, growth time is 250~350s, pressure is 100~300mbar, is being measured
Sub- well region surface grows p-type AlGaN electronic barrier layer.
S10 uses trimethyl gallium for gallium source, and two luxuriant magnesium are magnesium source, NH3For nitrogen source, N2For carrier gas, the life of reaction chamber is controlled
Long temperature is 900~1000 DEG C, growth time is 2500~3500s, pressure is 200~400mbar, is hindered in p-type AlGaN electronics
Barrier surface grows the p-type GaN layer of Mg doping.
S11 uses trimethyl gallium for gallium source, and TMln is indium source, and two luxuriant magnesium are magnesium source, NH3For nitrogen source, N2For carrier gas, control
The growth temperature of reaction chamber is 500~800 DEG C, growth time is 100~200s, pressure is 200~400mbar, in p-type GaN
Layer surface grows contact electrode layer.
S12, N of the structure that step S11 is obtained at a temperature of 600~700 DEG C2Anneal 800~1000s in atmosphere, so
After be down to room temperature, obtain the LED based on superlattices potential barrier quantum well structure.
It should be noted that temperature, pressure and the time being related in each step can when above-mentioned steps are embodied
To take any numerical value in corresponding range, such as when growth temperature is 500~800 DEG C, the temperature of specific implementation can be 500
DEG C, or 800 DEG C.It can also be any temperature in 500~800 DEG C.
The above embodiments are only used to illustrate the present invention, and not limitation of the present invention, in relation to the common of technical field
Technical staff can also make a variety of changes and modification without departing from the spirit and scope of the present invention, therefore all
Equivalent technical solution also belongs to scope of the invention, and scope of patent protection of the invention should be defined by the claims.
Claims (8)
1. a kind of LED based on superlattices potential barrier quantum well structure characterized by comprising
Sapphire Substrate；
The GaN forming core layer being set to above Sapphire Substrate；
The undoped GaN layer being set to above GaN forming core layer；
The n-type GaN layer being set to above undoped GaN layer；
It is set to the quantum well region above n-type GaN layer, the quantum well region includes the first area in 8~15 periods from bottom to up
With the second area in 3~10 periods, the first area includes the superlattices in 3~10 periods being arranged from bottom to up
AlxInyGa1-x-yN/GaN barrier layer and InGaN potential well layer, the second area include the Al in 3~10 periodsxInyGa1-x-yN/
GaN barrier layer；
The p-type AlGaN electronic barrier layer being set to above second area；
The p-type GaN layer being set to above p-type AlGaN electronic barrier layer；
The contact electrode layer being set to above p-type GaN layer.
2. the LED according to claim 1 based on superlattices potential barrier quantum well structure, which is characterized in that the N-shaped GaN
Layer is the n-type GaN layer of Si doping.
3. the LED according to claim 1 based on superlattices potential barrier quantum well structure, which is characterized in that the p-type GaN
Layer is the p-type GaN layer of Mg doping.
4. the LED according to claim 1 based on superlattices potential barrier quantum well structure, which is characterized in that the sapphire
Substrate with a thickness of 300~400 μm；The GaN forming core layer with a thickness of 20~30nm；The thickness of the undoped GaN layer
It is 1.5~2.5 μm；The n-type GaN layer with a thickness of 1~2 μm；The superlattices Al in each periodxInyGa1-x-yN/GaN potential barrier
Superlattices Al in layerxInyGa1-x-yN barrier layer with a thickness of 3~10nm, superlattices GaN layer with a thickness of 3~10nm, it is described
InGaN potential well layer with a thickness of 3~10nm；The p-type AlGaN electronic barrier layer with a thickness of 40~80nm；The p-type GaN
Layer with a thickness of 200~300nm；The contact electrode layer with a thickness of 50~100nm.
5. the LED according to claim 1 based on superlattices potential barrier quantum well structure, which is characterized in that the superlattices
AlxInyGa1-x-yIn N/GaN barrier layer, 0 < x < 0.5,0 < y < 0.5, and from n-type GaN layer to p-type AlGaN electronic barrier layer direction
The numerical value of x is incremented by, the number decrements of y.
6. a kind of preparation method of the LED based on superlattices potential barrier quantum well structure characterized by comprising
S1, at a temperature of 900~1200 DEG C, in H2Impurity or oxygen first are carried out to the surface of patterned Sapphire Substrate in atmosphere
300~500s of reduction treatment of compound, then to treated, sapphire substrate surface carries out nitrogen treatment, obtains sapphire lining
Bottom；
S2 uses trimethyl gallium for gallium source, NH3For nitrogen source, H2For carrier gas, the growth temperature for controlling reaction chamber is 400~900 DEG C,
Growth time is 100~200s, pressure is 500~700mbar, and the sapphire substrate surface growth after nitrogen treatment is initial
GaN nucleating layer, and temperature be 1000~1200 DEG C under conditions of to initial GaN nucleating layer anneal 150~250s formed GaN at
Stratum nucleare；
S3 uses trimethyl gallium for gallium source, NH3For nitrogen source, H2For carrier gas, the growth temperature for controlling reaction chamber is 1000~1200
DEG C, growth time be 3400~3800s, pressure is 500~700mbar, grow undoped GaN layer in GaN nucleation layer surface；
S4 uses trimethyl gallium for gallium source, SiH4For silicon source, NH3For nitrogen source, H2For carrier gas, the growth temperature for controlling reaction chamber is
1000~1200 DEG C, growth time be 1700~1900s, pressure is 500~700mbar, undoped GaN layer surface grow
The n-type GaN layer of Si doping；
S5, including 5.1,5.2 and 5.3；5.1, use triethyl-gallium for gallium source, trimethyl aluminium is silicon source, and TMln is indium source, NH3For
Nitrogen source, N2For carrier gas, the growth temperature for controlling reaction chamber is 800~900 DEG C, growth time is 200~400s, pressure 300
~500mbar grows superlattices Al on n-type GaN layer surfacexInyGa1-x-yN barrier layer；5.2, use triethyl-gallium for gallium source, NH3
For nitrogen source, N2For carrier gas, the growth temperature for controlling reaction chamber is 800~900 DEG C, growth time is 250~350s, pressure is
300~500mbar, in superlattices AlxInyGa1-x-ySuperlattices GaN layer is grown in N barrier layer；5.3, it repeats 3~10 times 5.1
With 5.2；
S6, using triethyl-gallium as gallium source, TMln is indium source, NH3For nitrogen source, N2For carrier gas, the growth temperature for controlling reaction chamber is
700~800 DEG C, growth time be 150~250s, pressure is 300~500mbar, raw on the superlattices GaN layer surface of top layer
Long InGaN potential well layer；
S7 repeats 8~15 S5 and S6；
S8 continues 3~10 times 5.1 and 5.2 in the InGaN potential well layer surface of top layer, obtains quantum well region；
S9 uses trimethyl gallium for gallium source, and trimethyl aluminium is silicon source, and two luxuriant magnesium are magnesium source, NH3For nitrogen source, N2For carrier gas, control
The growth temperature of reaction chamber is 900~1000 DEG C, growth time is 250~350s, pressure is 100~300mbar, in Quantum Well
Area surface grows p-type AlGaN electronic barrier layer；
S10 uses trimethyl gallium for gallium source, and two luxuriant magnesium are magnesium source, NH3For nitrogen source, N2For carrier gas, the growth temperature of reaction chamber is controlled
Degree is 900~1000 DEG C, growth time is 2500~3500s, pressure is 200~400mbar, in p-type AlGaN electronic barrier layer
Surface grows the p-type GaN layer of Mg doping；
S11 uses trimethyl gallium for gallium source, and TMln is indium source, and two luxuriant magnesium are magnesium source, NH3For nitrogen source, N2For carrier gas, control reaction
The growth temperature of room is 500~800 DEG C, growth time is 100~200s, pressure is 200~400mbar, in p-type GaN layer table
It looks unfamiliar long electrode contact layer；
S12, N of the structure that step S11 is obtained at a temperature of 600~700 DEG C2Anneal 800~1000s in atmosphere, is then down to
Room temperature obtains the LED based on superlattices potential barrier quantum well structure.
7. the LED according to claim 6 based on superlattices potential barrier quantum well structure, which is characterized in that the sapphire
Substrate with a thickness of 300~400 μm；The GaN forming core layer with a thickness of 20~30nm；The thickness of the undoped GaN layer
It is 1.5~2.5 μm；The n-type GaN layer with a thickness of 1~2 μm；The superlattices Al in each periodxInyGa1-x-yN/GaN potential barrier
Superlattices Al in layerxInyGa1-x-yN barrier layer with a thickness of 3~10nm, superlattices GaN layer with a thickness of 3~10nm, it is described
InGaN potential well layer with a thickness of 3~10nm；The p-type AlGaN electronic barrier layer with a thickness of 40~80nm；The p-type GaN
Layer with a thickness of 200~300nm；The contact electrode layer with a thickness of 50~100nm.
8. the LED according to claim 6 based on superlattices potential barrier quantum well structure, which is characterized in that the superlattices
AlxInyGa1-x-yIn N/GaN barrier layer, 0 < x < 0.5,0 < y < 0.5, and from n-type GaN layer to p-type AlGaN electronic barrier layer direction
The numerical value of x is incremented by, the number decrements of y.
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| CN114256394A (en) * | 2021-12-30 | 2022-03-29 | 淮安澳洋顺昌光电技术有限公司 | Light emitting diode and preparation method thereof |
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| CN114256394A (en) * | 2021-12-30 | 2022-03-29 | 淮安澳洋顺昌光电技术有限公司 | Light emitting diode and preparation method thereof |
| CN114256394B (en) * | 2021-12-30 | 2023-09-19 | 淮安澳洋顺昌光电技术有限公司 | Light-emitting diode and preparation method thereof |
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