CN109638130B - Light emitting device - Google Patents
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- CN109638130B CN109638130B CN201811358074.7A CN201811358074A CN109638130B CN 109638130 B CN109638130 B CN 109638130B CN 201811358074 A CN201811358074 A CN 201811358074A CN 109638130 B CN109638130 B CN 109638130B
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- 239000004065 semiconductor Substances 0.000 claims abstract description 78
- 230000000149 penetrating effect Effects 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 62
- 230000004888 barrier function Effects 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 103
- 230000005855 radiation Effects 0.000 description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- 230000000295 complement effect Effects 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000002356 single layer Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a light-emitting device, which comprises a light-emitting laminated layer, a light-emitting layer and a light-emitting layer, wherein the light-emitting laminated layer comprises a first semiconductor layer, a second semiconductor layer and a light-emitting layer, the first semiconductor layer and the second semiconductor layer are formed between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer is provided with a first surface, a first part is connected with the first surface, and a second part is connected with the first part; an opening penetrating the first portion of the first semiconductor layer from the upper surface; a concave part is connected with the opening and penetrates through the second semiconductor layer, the light-emitting layer and the second part of the first semiconductor layer, wherein the concave part has a width larger than that of the opening so that the bottom of the concave part is exposed out of a second surface of the first semiconductor layer and is opposite to the first surface; and an electrode corresponding to the opening and located in the recess.
Description
The application is a divisional application of Chinese invention patent application (application number: 201310262787.4, application date: 2013, 06 and 27, invention name: light-emitting device).
Technical Field
The present invention relates to a light emitting device, and more particularly, to a light emitting device for transferring a light emitting stack from a growth substrate to a conductive substrate.
Background
The Light Emitting Diode (LED) emits light based on the principle that electrons move between an n-type semiconductor and a p-type semiconductor to release energy. Light emitting diodes are also referred to as cold light sources because they emit light on a principle different from incandescent lamps that heat filaments. Furthermore, the better environmental tolerance, longer lifetime, lighter and portable, and lower power consumption of leds make them an alternative light source in the lighting market. Light emitting diodes are used in various fields such as traffic signs, backlight modules, street lamps, and medical devices, and have gradually replaced conventional light sources.
Light emitting diodes have a light emitting stack epitaxially grown on a conductive substrate or on an insulating substrate. The led with the conductive substrate can form an electrode on top of the light emitting stack, which is generally called a vertical led. The led with the insulating substrate is required to expose two semiconductor layers with different polarities through an etching process, and electrodes are respectively formed on the two semiconductor layers, which is generally called a horizontal led. The vertical light emitting diode has the advantages of small light shielding area of an electrode, good heat dissipation effect and no additional etching epitaxial manufacturing process, but the current conductive substrate for epitaxial growth has the problem of easy light absorption, thereby affecting the light emitting efficiency of the light emitting diode. The horizontal light emitting diode has the advantages that the insulating substrate is also a transparent substrate, light can be emitted from all directions of the light emitting diode, but the horizontal light emitting diode also has the defects of poor heat dissipation, large light shielding area of an electrode, light emitting area loss of an epitaxial etching manufacturing process and the like.
The light emitting diode can be further connected with other elements to form a light emitting device. The light emitting diode can be connected to the sub-carrier through the side with the substrate, or formed between the sub-carrier and the light emitting diode by solder or glue material to form a light emitting device. In addition, the submount may further include a circuit electrically connected to the electrodes of the led through a conductive structure such as a metal wire.
Disclosure of Invention
In order to solve the above problems, the present invention discloses a light emitting device, comprising a light emitting stack including a first semiconductor layer, a second semiconductor layer and a light emitting layer formed between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer has a first surface, a first portion connected to the first surface, and a second portion connected to the first portion; an opening penetrating the first portion of the first semiconductor layer from the upper surface; a concave part is connected with the opening and penetrates through the second semiconductor layer, the light-emitting layer and the second part of the first semiconductor layer, wherein the concave part has a width larger than that of the opening so that the bottom of the concave part is exposed out of a second surface of the first semiconductor layer and is opposite to the first surface; and an electrode corresponding to the opening and located in the recess.
Drawings
FIGS. 1A to 1H illustrate a method of fabricating a light emitting device according to a first embodiment of the present invention;
FIG. 2 is a diagram showing a light emitting device according to a second embodiment of the present invention;
FIG. 3 is a diagram showing a light emitting device according to a third embodiment of the present invention;
fig. 4 is a view showing an electrode configuration of a light emitting device according to a first embodiment of the present invention;
fig. 5 is a view showing an electrode configuration of a light emitting device according to a fourth embodiment of the present invention;
fig. 6 is a view showing an electrode configuration of a light-emitting device according to a fifth embodiment of the present invention;
fig. 7 is a view showing an electrode configuration of a light-emitting device according to a sixth embodiment of the present invention;
fig. 8 is a view showing an electrode configuration of a light-emitting device according to a seventh embodiment of the present invention;
fig. 9 is a view showing an electrode configuration of a light-emitting device according to an eighth embodiment of the present invention;
fig. 10 is a view showing an electrode configuration of a light-emitting device according to a ninth embodiment of the present invention.
Description of the symbols
100 light emitting device
101 growth substrate
102 first semiconductor layer
102a first surface
102b first part
102c second part
102d second surface
103 buffer layer
104 light emitting layer
105 concave part
106 second semiconductor layer
108 light emitting laminate
110 electrode
110a upper surface
110b contact area
110c exposed area
112 conductive layer
114 insulating structure
114a upper surface
115 routing electrode
116 Barrier layer
116a upper surface
117 conductive structure
118 reflective layer
120 joining structure
122 conductive substrate
124 opening
126 coarsening structure
200 light emitting device
204 opening
210 electrode
211 bonding wire electrode
300 light emitting device
322 conductive substrate
320 jointing structure
318 reflecting layer
308 conductive layer
311 electrode
314 insulating structure
314a insulating layer
314b insulation part
316 conductive channel
111a second extension electrode
111b first extension electrode
500 light emitting device
510 routing electrode
511 extension electrode
517 conductive structure
522 conductive substrate
600 light emitting device
610 routing electrode
611 extended electrode
617 conductive structure
622 conductive substrate
700 light emitting device
710 routing electrode
711 extended electrode
717 conductive structure
722 conductive substrate
800 light emitting device
810a bonding electrode
810b bonding electrodes
811 extended electrode
811a radial branch
811b radial branches
811c radial branches
811d radial branch
822 conductive substrate
817 electrically conductive structure
900 light emitting device
922 conductive substrate
910a bonding wire electrode
910b bonding electrodes
911 extension electrode
911a radiation branch
911b radiation branch
917 conducting structure
1000 light emitting device
1022 conductive substrate
1011 extending electrode
1010a routing electrode
1010b routing electrode
1011a first radial branch
1011b second radial limb
W1、W2、W3Width of
Detailed Description
Referring to fig. 1A to fig. 1H, a method for manufacturing a light emitting device according to a first embodiment of the invention is shown. As shown in fig. 1A, a light emitting stack 108 is epitaxially formed on a growth substrate 101, and the light emitting stack 108 may include a first semiconductor layer 102, a second semiconductor layer 106, and a light emitting layer 104 disposed between the first semiconductor layer 102 and the second semiconductor layer 106. The light emitting stack 108 may be a nitride light emitting stack, the material may be selected from the group consisting of aluminum (Al), indium (In), gallium (Ga), and nitrogen (N), the growth substrate 101 may be a transparent insulating substrate such as a sapphire (sapphire) substrate, or a conductive substrate such as a silicon (Si) or silicon carbide (SiC) substrate, and a buffer layer 103 may be formed on the growth substrate 101 before the light emitting stack 108 is formed In order to reduce the lattice difference between the growth substrate 101 and the light emitting stack 108. The material of the light emitting stack 108 may be selected from the group consisting of aluminum (Al), gallium (Ga), indium (In), phosphorus (P), and arsenic (As), and the growth substrate may be GaAs. The first semiconductor layer 102, the light emitting layer 104, and the second semiconductor layer 106 are epitaxially grown on the growth substrate 101, and the first semiconductor layer 102 may be an n-type semiconductor and the second semiconductor layer 106 may be a p-type semiconductor. The structure of the light emitting stack 108 may include a Single Heterostructure (SH), a Double Heterostructure (DH), a double-side double heterostructure (DDH), or a multi-quantum well (MQW).
Referring to fig. 1B, a recess 105 is formed to penetrate the second semiconductor layer 106 and the light emitting layer 104 and expose the first semiconductor layer 102. The recess 105 has a pattern, and an electrode 110 corresponding to the pattern of the recess 105 is formed in the recess 105, and then a conductive layer 112 is formed on the second semiconductor layer 106. The electrode 110 is electrically connected to only the first semiconductor layer 102, and both sides of the electrode 110 and the sidewall of the recess 105 have a gap as seen in the cross-sectional view, so that the electrode 110 is insulated from the light-emitting layer 104 and the second semiconductor layer 106. The conductive layer 112 is in ohmic contact with the second semiconductor layer 106, and may be a transparent conductive layer such as Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), or aluminum-doped zinc oxide (AZO), or a metal material such as nickel (Ni), platinum (Pt), palladium (Pd), silver (Ag), or chromium (Cr). The electrode 110 may include a metal such as aluminum (Al), titanium (Ti), chromium (Cr), platinum (Pt), gold (Au), or a combination thereof.
Referring to fig. 1C, a barrier layer 116 is formed overlying the conductive layer 112 and an insulating structure 114 is formed overlying the electrode 110. The barrier layer 116 covers all surfaces of the conductive layer 112 except for the surfaces that contact the second semiconductor layer 106. The insulating structure 114 substantially corresponds to the pattern of the electrode 110, and fills the gap between the two sides of the electrode 110 and the sidewall of the recess 105. The upper surface 114a of the insulating structure 114 is substantially coplanar with the upper surface 116a of the barrier layer 116, and the insulating structure 114 is horizontally surrounded by the barrier layer 116 except for the portion filled into the recess 105. The insulating structure 114 comprises a transparent insulating material coated with a single layer of silicon dioxide by evaporation or sputtering, or spin-on-glass (SOG)(SiO2) Single layer titanium dioxide (TiO)2) Or a single layer of silicon nitride (Si)3N4) And then curing to form the product. The barrier layer 116 may be one or more layers including, for example, titanium (Ti), tungsten (W), platinum (Pt), titanium Tungsten (TiW), or combinations thereof.
Referring to fig. 1D, a reflective layer 118 is formed on the plane formed by the upper surface 114a of the insulating portion 114 and the upper surface 116a of the barrier layer 116. The reflective layer 118 may include aluminum (Al).
Referring to fig. 1E, a conductive substrate 122 is provided, and the conductive substrate 122 is bonded to the metal layer 118 through a bonding structure 120. The bonding structure 120 may include a metal such as gold (Au), indium (In), nickel (Ni), titanium (Ti), or a combination thereof. Then, a process of removing the growth substrate 101 is performed. The conductive substrate 122 may include a semiconductor material such as silicon (Si), or a metal material such as copper (Cu), tungsten (W), aluminum (Al), or the surface of the conductive substrate 122 may have Graphene (Graphene).
Referring to fig. 1F, a laser (not shown) may be provided from the back side of the growth substrate 101, and when the energy-decomposable buffer layer 103 is, for example, undoped or unintentionally doped gallium nitride (GaN), nitrogen (N) in the GaN may be vaporized by the energy of the laser to decompose the buffer layer 103, so that the growth substrate 101 may be easily removed to expose the first semiconductor layer 102.
Referring to fig. 1G, the buffer layer 103 remaining on the first semiconductor layer 102 may be further cleaned. When the buffer layer 103 is undoped or unintentionally doped gan, the cleaning of the step is mainly performed by Inductively Coupled Plasma (ICP) etching, and then hydrogen chloride (HCl) or hydrogen peroxide (H) may be used in combination, since the nitrogen of gan is vaporized in the above-mentioned process of removing the growth substrate 101 by laser, so as to remove the residual gan2O2) The surface of the first semiconductor layer 102 is cleaned intensively.
Referring to fig. 1H, an etching process is performed to form a roughened structure 126 on the first surface 102a of the first semiconductor layer 102, wherein the roughened structure 126 is a regular or irregular roughened surface having a roughness of about 0.5-1 μm, and the electrode 11 is removedThe first semiconductor layer 102 partially over 0 to form an opening 124. The recess 105 has a width W1A width W greater than the opening 1242Therefore, after the recess 105 and the opening 124 are formed sequentially, the first semiconductor layer 102 forms a second surface 102d opposite to the first surface 102a at the bottom connected to the recess 105, the electrode 110 is connected to the second surface 102d and formed in the recess 105 corresponding to the opening 124, the electrode 110 has a width W3Greater than W2. The upper surface 110a of the electrode 110 has a contact region 110b connected to the second surface 102d of the first semiconductor layer 102, and the upper surface 110a of the electrode 110 further has an exposed region 110c exposed by the opening 124. The thickness of the first semiconductor layer 102 may be 3-4 μm, and is divided into a first portion 102b and a second portion 102 c. The thickness of the first portion 102b is about 1.5 to 3 μm corresponding to the depth of the opening 124, and the thickness of the second portion 102c is about 1 to 1.5 μm corresponding to the recess 105. The electrode 110 may be electrically connected to the first semiconductor layer 102 but not formed on the first surface 102a, and thus, does not block light of the light emitting device 100.
Through the above manufacturing process, the light emitting device 100 of the present embodiment may include: a conductive substrate 122; a bonding structure 120 formed on the conductive substrate 122; a reflective layer 118 formed on the bonding structure; a conductive structure 117 comprising a barrier layer 116 formed on a portion of the reflective layer 118 and a conductive layer 112 covered by the barrier layer 116; a light-emitting stack 108 comprising a first semiconductor layer 102, a light-emitting layer 104, and a second semiconductor layer 106 electrically connected to the conductive layer 112; an insulating structure 114 formed on a portion of the reflective layer 118 and penetrating the second semiconductor layer 106, the light-emitting layer 104 and the second portion 102c of the first semiconductor layer 102; an electrode 110 covered in the insulating structure 124 and connected to the first semiconductor layer 102 with an upper surface 110 a; and an opening 124 penetrates the first portion 102b of the first semiconductor layer 102. The insulating structure 114 can insulate the electrode 110 from the second semiconductor layer 106 and the light-emitting layer 104, the electrode 110 and the light-emitting layer 104 are located in different regions of the light-emitting device 100 in the horizontal direction, and the light-emitting layer 104 is entirely located above the conductive structure 117, so that light emitted by the light-emitting layer 104 is not shielded by the electrode 110 and the conductive structure 117 of the light-emitting device 100. The upper surface 110a of the electrode 110 can be connected to an external power source by wire bonding.
Fig. 2 is a schematic diagram of a light-emitting device according to a second embodiment of the invention. The present embodiment is substantially the same as the first embodiment, except that a wire electrode 211 may be further formed on the electrode 210 of the present embodiment in the opening 204 for disposing solder balls (not shown) for wire bonding operation.
Fig. 3 is a schematic diagram of a light-emitting device according to a third embodiment of the invention. The present embodiment is substantially the same as the previous embodiments, except that the conductive layer 308 electrically connected to the second semiconductor layer 306 is a non-reflective transparent conductive layer including Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), and aluminum-doped zinc oxide (AZO), and there is no barrier layer in the first embodiment, the insulating structure 314 includes an insulating layer 314a formed between the light emitting stack 310 and the reflective layer 318, and an insulating portion 314b covering the electrode 311, and a plurality of conductive channels 316 penetrate through the insulating layer 314a and have two ends respectively connected to the conductive layer 308 and the reflective layer 318, and there may be a bonding structure 320 and a conductive substrate 322 under the reflective layer 318, which are the same as those in the first embodiment. The conductive via 316 may be a metal with good hole-filling capability, such as titanium (Ti), aluminum (Al), nickel (Ni), chromium (Cr), and copper (Cu). The insulating structure 314 may be a transparent insulating material, and may be formed by coating a single layer of silicon dioxide (SiO) by evaporation, sputtering, or spin-on-glass (SOG)2) Or a single layer of titanium dioxide (TiO)2) Or a single layer of silicon nitride (Si)3N4) And then cured, or a Bragg reflector (DBR) layer can be formed by repeatedly overlapping two or more layers with different refractive indexes.
Referring to fig. 4, which shows the electrode configuration of the light emitting device according to the first embodiment of the present invention, the electrode design of the present embodiment can also be applied to the second and third embodiments, and in order to clearly show the electrode patterns, the present embodiment only shows the patterns of the electrode 110 and the conductive structure 117. The conductive substrate 122 of the light-emitting device 100 may have a rectangular shape from a top view, and the size of the conductive substrate may be between 1mil and 70 mils. The electrode 110 of the present embodiment includes a wire bonding electrode 115 and an extension electrode 111 extending from the wire bonding electrode 115, the wire bonding electrode 115 is located at a corner of the light emitting device 100 near the rectangle, and the extension electrode 111 includes a first extension electrode 111b formed along the periphery of the light emitting device 100 and a second extension electrode 111a surrounded by the first extension electrode 111b and connected to the first extension electrode 111b, and the first extension electrode 111b and the second extension electrode 111a form another rectangle. The wire bonding electrode 115 and/or the extension electrode 111 and the conductive structure 117 are formed on different areas of the conductive substrate 122 without overlapping each other, so that the conductive structure 117 can be substantially complementary to the pattern formed by the wire bonding electrode 115 and the extension electrode 111 as shown by the diagonal line area in the figure.
Referring to fig. 5, which shows an electrode configuration of a light emitting device according to a fourth embodiment of the present invention, the electrode design of the present embodiment can be applied to the first to third embodiments, and in order to clearly show the electrode patterns, the present embodiment only shows the patterns related to the electrodes and the conductive structures in the foregoing embodiments. The outline of the conductive substrate 522 of the light emitting device 500 from the top view may be a rectangle, the electrodes of the embodiment include a wire bonding electrode 510 and an extension electrode 511 extending from the wire bonding electrode 510, the wire bonding electrode 510 is substantially located at the geometric center of the rectangle of the light emitting device 500, and the extension electrode 511 has a plurality of radiating branches extending from the wire bonding electrode 510. The routing electrode 510 and/or the extension electrode 511 and the conductive structure 517 are formed on different regions of the conductive substrate 522 without overlapping each other, so that the conductive structure 517 can be substantially complementary to the pattern formed by the routing electrode 510 and the extension electrode 511, as shown by the hatched region in the figure.
Referring to fig. 6, an electrode configuration of a light emitting device according to a fifth embodiment of the present invention is shown, and the electrode design of the present embodiment can be applied to the first to third embodiments. The outline of the conductive substrate 622 of the light emitting device 600 may be rectangular from the top view, the electrode of the embodiment includes a wire bonding electrode 610 and an extension electrode 611 extending from the wire bonding electrode 610, the wire bonding electrode 610 is substantially located at the geometric center of the rectangle of the light emitting device 600, and the extension electrode 611 has a plurality of radiating branches extending from the wire bonding electrode 610. In this embodiment, compared to the fifth embodiment, a larger number of radiation branches are added, and the lengths of the radiation branches may be different according to the extending direction, for example, the radiation branch of the extending electrode 611 extending to the opposite corners of the rectangle of the light emitting device 600 may have a longer length than the radiation branch extending to the side. The routing electrode 610 and/or the extension electrode 611 and the conductive structure 617 are formed on different regions of the conductive substrate 622 without overlapping each other, so that the conductive structure 617 can be substantially complementary to the pattern formed by the routing electrode 610 and the extension electrode 611, as shown by the hatched region in the figure.
Referring to fig. 7, an electrode configuration of a light emitting device according to a sixth embodiment of the present invention is shown, and the electrode design of the present embodiment can be applied to the first to third embodiments. The outline of the conductive substrate 722 of the light emitting device 700 may be rectangular when viewed from the top, the electrodes of this embodiment include a wire bonding electrode 710 and an extension electrode 711 extending from the wire bonding electrode 710, the wire bonding electrode 710 is located at a corner of the rectangle of the light emitting device 700, and the extension electrode 711 has a plurality of radiating branches extending from the wire bonding electrode 710, and the extension lengths of the radiating branches may be different according to the extension angles. Wire bond electrode 710 and/or extension electrode 711 and conductive structure 717 are formed on different areas of conductive substrate 722 without overlapping each other, so that conductive structure 717 can be substantially complementary to the pattern formed by wire bond electrode 710 and extension electrode 711, as shown by the diagonal lines in the figure.
Referring to fig. 8, an electrode configuration of a light emitting device according to a seventh embodiment of the present invention is shown, and the electrode design of the present embodiment can be applied to the first to third embodiments. The outline of the conductive substrate 822 of the light emitting device 800 can be rectangular when viewed from the top, and the structure of the electrode of this embodiment includes wire bonding electrodes 810a and 810b located near one side of the rectangle of the light emitting device 800; the extension electrode 811 includes radiating branches 811a and 811b extending from the wire-bonded electrodes 810a and 810b to the other side of the rectangle, respectively, a radiating branch 811c having two ends connected to the wire-bonded electrodes 810a and 810, respectively, and being parallel to the sides of the rectangle, and a radiating branch 811d extending from the connecting electrode 811c and being parallel to the radiating branches 811a and 811 b. Wire bond electrode 810 and/or extension electrode 811 and conductive structure 817 are formed on different areas of conductive substrate 822 and do not overlap each other, so that conductive structure 817 can be substantially complementary to the pattern formed by wire bond electrode 810 and extension electrode 811, as shown by the hatched areas in the figure.
Referring to fig. 9, an electrode configuration of a light emitting device according to an eighth embodiment of the present invention is shown, and the electrode design of the present embodiment can be applied to the first to third embodiments. The outline of the conductive substrate 922 of the light emitting device 900 can be rectangular when viewed from the top, and the electrodes of the present embodiment include bonding electrodes 910a and 910b located near one side of the rectangle of the light emitting device 900; and the extension electrode 911 includes radiation branches 911a and 911b extending from the bonding electrodes 910a and 910b to the other side of the rectangle, respectively. The present embodiment is substantially the same as the eighth embodiment, except that the radiation branches 911a and 911b are zigzag and extend from the routing electrodes 910a and 910b, and the routing electrodes 910a and 910b extend to form a plurality of radiation branches 911a and 911b, respectively. The routing electrode 910 and/or the extension electrode 911 and the conductive structure 917 are formed on different regions of the conductive substrate 922 and do not overlap with each other, so that the conductive structure 917 can be substantially complementary to the pattern formed by the routing electrode 910 and the extension electrode 911 as shown by the diagonal line region in the figure.
Referring to fig. 10, an electrode configuration of a light emitting device according to a ninth embodiment of the present invention is shown, and the electrode design of the present embodiment can be applied to the first to third embodiments. The outline of the conductive substrate 1022 of the light-emitting device 1000 can be rectangular when viewed from the top, and the electrodes of the present embodiment include routing electrodes 1010a and 1010b located near two corners of one side of the rectangle of the conductive substrate 1022; the extension electrode 1011 includes a first radiation branch 1011a disposed along the rectangle of the conductive substrate 1022 and connected to the wire-bonded electrodes 1010a and 1010b, and a second radiation branch 1011b connected between two opposite sides of the rectangle of the first radiation branch 1011a, and the first radiation branch 1011a and the second radiation branch 1011b form a grid pattern. The wire bonding electrode 1010 and/or the extension electrode 1011 and the conductive structure 1017 are formed on different areas of the conductive substrate 1022, and do not overlap with each other, so that the conductive structure 1017 can be substantially complementary to the pattern formed by the wire bonding electrode 1010 and the extension electrode 1011, as shown by the hatched area in the figure.
Although the invention has been described with reference to particular embodiments, it is not intended to limit the scope, sequence, or use of materials or process steps to the particular embodiments described. Various modifications and alterations of this invention can be made without departing from the spirit and scope of this invention.
Claims (10)
1. A light emitting device, comprising:
a substrate;
a light emitting stack including a first semiconductor layer, a second semiconductor layer, and a light emitting layer formed between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer has a first surface, a first portion connected to the first surface, and a second portion connected to the first portion;
a conductive structure connected to the second semiconductor layer and arranged between the substrate and the second semiconductor layer
An opening penetrating the first portion of the first semiconductor layer from the first surface;
a recess penetrating through the second semiconductor layer, the light emitting layer and the second portion of the first semiconductor layer and connected to the opening, wherein the recess has a width greater than that of the opening, such that a bottom of the recess is exposed to a second surface of the first semiconductor layer, the second surface being opposite to the first surface;
an electrode located in the recess and corresponding to the opening; and
a routing electrode which is positioned in the opening and is connected with the electrode;
in a top view, the wire bonding electrode and the conductive structure are not overlapped with each other.
2. The light-emitting device according to claim 1, comprising an insulating structure covering the electrode.
3. The light-emitting device according to claim 1, wherein the electrode has a width greater than the width of the opening and is connected to the second surface.
4. The light emitting device of claim 1, wherein the conductive structure comprises a conductive layer electrically connected to the second semiconductor layer and a barrier layer encapsulating and electrically connected to the second semiconductor layer.
5. The light-emitting device according to claim 3, wherein the insulating structure separates the electrode, the light-emitting layer, and the second semiconductor layer.
6. The light-emitting device of claim 1, further comprising a bonding structure and a conductive substrate, wherein the insulating structure has a third surface, the barrier layer has a fourth surface, and the third surface of the insulating structure is substantially coplanar with the fourth surface of the barrier layer, wherein the bonding structure is between the third surface, the fourth surface, and the conductive substrate.
7. The light-emitting device according to claim 1, wherein the first surface of the light-emitting stack is a roughened structure.
8. The light-emitting device of claim 1, further comprising a metal reflective layer formed under the conductive structure and the insulating structure, a conductive connection layer formed under the metal reflective layer, and a conductive substrate formed under the conductive connection layer.
9. The light emitting device of claim 2, wherein the insulating structure is further formed below the second semiconductor layer, and the conductive structure comprises a plurality of conductive vias penetrating the insulating layer below the second semiconductor layer.
10. The light-emitting device according to claim 1, wherein the first surface of the first semiconductor layer does not include a structure for shielding light emitted from the light-emitting layer.
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