CN109635607A - A kind of millimeter wave fairing realized towards single-chip - Google Patents
A kind of millimeter wave fairing realized towards single-chip Download PDFInfo
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- CN109635607A CN109635607A CN201811337846.9A CN201811337846A CN109635607A CN 109635607 A CN109635607 A CN 109635607A CN 201811337846 A CN201811337846 A CN 201811337846A CN 109635607 A CN109635607 A CN 109635607A
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- Prior art keywords
- transmission line
- isolated location
- rectification
- component
- millimeter wave
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K7/00—Methods or arrangements for sensing record carriers, e.g. for reading patterns
- G06K7/10—Methods or arrangements for sensing record carriers, e.g. for reading patterns by electromagnetic radiation, e.g. optical sensing; by corpuscular radiation
- G06K7/10009—Methods or arrangements for sensing record carriers, e.g. for reading patterns by electromagnetic radiation, e.g. optical sensing; by corpuscular radiation sensing by radiation using wavelengths larger than 0.1 mm, e.g. radio-waves or microwaves
- G06K7/10316—Methods or arrangements for sensing record carriers, e.g. for reading patterns by electromagnetic radiation, e.g. optical sensing; by corpuscular radiation sensing by radiation using wavelengths larger than 0.1 mm, e.g. radio-waves or microwaves using at least one antenna particularly designed for interrogating the wireless record carriers
Abstract
A kind of millimeter wave fairing realized towards single-chip is provided in the embodiment of the present application, including the antenna for receiving millimeter wave, it further include the first isolated location, the second isolated location, rectification unit and energy-storage units, wherein: the first isolated location, it is electrically connected with antenna, the received millimeter wave of antenna is connected, and realizes the isolation of DC component after rectification；Rectification unit completes rectification, and give the rectification components to second isolated location for receiving the AC compounent of the first isolated location transmission；Second isolated location is electrically connected with the first isolated location and rectification unit respectively, the high fdrequency component for being isolated in the rectification component, and the DC component in the rectification component is transmitted to energy-storage units；The energy-storage units, for storing the direct current of the second isolated location transmission, for guaranteeing that the RFID after minification can be worked normally.
Description
Technical field
This application involves rectification circuit technical fields more particularly to a kind of millimeter wave realized towards single-chip to rectify dress
It sets.
Background technique
Radio frequency identification (RFID, Radio Frequency Identification) technology, also known as radio frequency identification, can
To identify specific objective by radio signals and read and write related data, without establishing machine between identifying system and specific objective
Tool or optical contact.It is realized and is wirelessly communicated by antenna, reading or the write-in to tag recognition code and internal storage data may be implemented
Operation.
In RFID technique, RECTIFYING ANTENNA is one of key technology, its main function is the microwave energy that will be received
Available DC energy is converted to, is generally made of receiving antenna and plane rectification circuit.It is continuous with wireless communication technique
Development, the application scenarios of RFID make RFID increasingly tend to minimize, in the RFID of miniaturization, due to RFID size
Limitation, prevent existing plane rectification circuit from being transplanted in the RFID of miniaturization completely, if fruit part is transplanted, may be led
RFID after causing minification can not be applied, it is therefore desirable to be designed a kind of rectification circuit for the lesser RFID of size, be guaranteed
RFID after minification can be worked normally.
Summary of the invention
A kind of millimeter wave fairing and rectification circuit realized towards single-chip is provided in the embodiment of the present application, is used
RFID after guaranteeing minification can be worked normally.
A kind of millimeter wave fairing realized towards single-chip further includes the including the antenna for receiving millimeter wave
One isolated location, the second isolated location, rectification unit and energy-storage units, in which: first isolated location and the antenna
Electrical connection, for receiving antenna transmission millimeter wave energy, by the high fdrequency component in millimeter wave energy be transmitted separately to second every
From unit and rectification unit and after realizing rectification, DC component is isolated；The rectification unit, it is single for receiving first isolation
The AC compounent of member transmission completes rectification, and gives the rectification components to second isolated location；Second isolation
Unit is electrically connected with the first isolated location and rectification unit respectively, the high fdrequency component for being isolated in the rectification component, and will
DC component in rectification component is transmitted to energy-storage units；The energy-storage units, for storing the second isolated location transmission
Direct current.
First isolated location includes at least one capacitor.
The capacitor is metal-insulating layer-metal capacitor MIM capacitor.
The capacitance range of the capacitor is 0.01 pico farad~0.2 pico farad.
The capacitance of the capacitor is 0.1 pico farad.
Second isolated location includes at least one inductance.
The inductance is stratiform geometric pattern inductance.
The value range of the inductance is 0.1 nanohenry benefit~1 nanohenry benefit.
The value of the inductance is 0.5 nanohenry benefit.
The rectification unit, including first transmission line, second transmission line, third transmission line and diode；Wherein, described
Respectively one end is hanging for one transmission line and second transmission line；The not hanging one end of the first transmission line and second transmission line be not hanging
One end, with after series connection third transmission line and diode connect.
The first transmission line, second transmission line are identical with the material of third transmission line.
The first transmission line value range is 10 ohm~100 ohm.
The value of the first transmission line is the 1/12 of wavelength.
The second transmission line value range is 10 ohm~100 ohm.
The value of the second transmission line is 1/8 λ.
The third transmission line value range is 10 ohm~100 ohm.
The third transmission line value is the 1/4 of wavelength.
The diode is Schottky diode.
It,, will milli by the first isolated location in millimeter wave fairing set forth above by using above-mentioned technical proposal
High fdrequency component in metric wave energy is transmitted separately to rectification unit, and realizes the DC component isolation after rectification, eventually by the
Two isolated locations are isolated by high fdrequency component, and DC component is stored in energy-storage units, are provided electric energy for millimeter wave fairing, are passed through
Above-mentioned fairing is applied in the lesser RFID of size, and the RFID after capable of guaranteeing minification can be worked normally.
Detailed description of the invention
The drawings described herein are used to provide a further understanding of the present application, constitutes part of this application, this Shen
Illustrative embodiments and their description please are not constituted an undue limitation on the present application for explaining the application.In the accompanying drawings:
Fig. 1 is the fairing structure composition schematic diagram that the embodiment of the present invention one proposes；
Fig. 2 is the first isolated location structure composition schematic diagram proposed in the embodiment of the present invention two；
Fig. 3 is the second isolated location structure composition schematic diagram proposed in the embodiment of the present invention three；
Fig. 4 is the rectification unit structure composition schematic diagram proposed in the embodiment of the present invention four；
Fig. 5 is the energy-storage units structure composition schematic diagram proposed in the embodiment of the present invention five.
Specific embodiment
During realizing the application, inventor has found the continuous development with technology of Internet of things, and RFID is smaller and smaller
Type, but volume is smaller, RFID working performance is poorer.
In order to which technical solution in the embodiment of the present application and advantage is more clearly understood, below in conjunction with attached drawing to the application
Exemplary embodiment be described in more detail, it is clear that described embodiment be only the application a part implement
Example, rather than the exhaustion of all embodiments.It should be noted that in the absence of conflict, embodiment and reality in the application
The feature applied in example can be combined with each other.
Embodiment one
The embodiment of the present application one proposes a kind of millimeter wave fairing realized towards single-chip, mentions in the embodiment of the present application
In technical solution out, millimeter wave fairing is arranged in a chip, as shown in Figure 1, the embodiment of the present application one
The millimeter wave fairing of proposition includes the antenna 101 for receiving millimeter wave, the first isolated location 102, the second isolated location
103, rectification unit 104 and energy-storage units 105.
Antenna 101 is electrically connected, antenna between the first isolated location 102, for receiving millimeter wave energy, and will be received
The millimeter wave energy transmission arrived gives the first isolated location 102.
The millimeter wave energy that antenna receives is related to RFID size and power, a kind of preferable implementation, in this Shen
In the technical solution that please be proposed, the millimeter wave energy that antenna receives is 10mW.
First isolated location 102 and antenna 101 are electrically connected, after 104 parallel connection of the second isolated location 103 and rectification unit again
It connects with the first isolated location 102.First isolated location 102 is used for the millimeter wave energy that receiving antenna 101 transmits, and will receive
To millimeter wave energy in high fdrequency component transmit 104 second isolated location 103 of rectification unit.And the direct current after isolation rectification point
Amount.
Rectification unit 104, for receiving the high fdrequency component of the first isolated location 102 transmission, to the high fdrequency component received
It is rectified, obtains rectification component, and give rectification components to the second isolated location 103.
Second isolated location 103 is electrically connected with the first isolated location and rectification unit respectively, single for receiving the first isolation
The high fdrequency component of 102 transmission of member, and receive the rectification component that rectification unit 104 transmits.
It may also include fraction of high fdrequency component in the rectification component that rectification unit 104 transmits, therefore the second isolated location
DC component is transmitted to energy-storage units 105 by the high fdrequency component in 103 isolation rectification components.
Energy-storage units 105, for storing the DC component of the second isolated location 104 transmission.
Above-mentioned the application propose millimeter wave fairing in, when applying in RFID, can receiving antenna receive
Millimeter wave, and pass through the buffer action of the first isolated location, the second isolated location, the direct current that rectification unit is rectified point
Amount is transferred to energy-storage units, the DC component storage that energy-storage units are used to obtain, the subsequent driving energy that may be used as RFID,
As RFID provides electric energy.
Embodiment two
On the basis of above-described embodiment one, further, the embodiment of the present invention two is carried out for the first isolated location
It elaborates, as shown in Fig. 2, the first isolated location 102, includes at least one capacitor 201.
Capacitor 201 is used as energy-storage travelling wave tube, can carry out energy storage to electric energy.First isolated location 201 may include multiple electricity
Hold, or capacitor is protected by resistance, can specifically be determined according to the electric energy input value of fairing.
A kind of preferable implementation, it is contemplated that the lesser size of RFID, the present invention in select the first isolated location 201 to make
With a capacitor, which can be one of metal-insulating layer-metal capacitor (MIM) capacitor, the value of capacitor 201
Range can be 0.01 pico farad~0.2 pico farad, and in the present invention, the value of capacitor 201 is 0.1 pico farad.
Specifically, in the technical solution set forth above of the embodiment of the present invention two, MIM capacitor is integrated electric with semiconductor
Metal of road manufacturing process, such as silicon nitride, silica medium etc. are not done specifically defined herein.
Embodiment three
Further, on the basis of above-described embodiment one, the present invention is carried out further directed to the second isolated location 103
It elaborates, as shown in figure 3, the second isolated location 103, may include at least one 301 element of inductance, or have inductive
Other electronic components of energy.Specific restriction is not done herein.
In this motion, in order to adapt to the smaller size of RFID, the second isolated location 103 includes an inductance 301, the
Further the high fdrequency component flowed out from the first isolated location 102 can be isolated for two isolated locations 103.
Specifically, which can be one of stratiform geometric pattern inductance, and the value range of inductance 301 is 0.1 nanohenry
Benefit~1 nanohenry benefit, preferably, in the present invention, the value of inductance 301 is 0.5 nanohenry benefit.
Specifically, inductance is stratiform geometric pattern in the technical solution that the embodiment of the present invention three proposes, with semiconductor integrated circuit
The metal line of technique is compatible.
Example IV
Further, the embodiment of the present invention four is elaborated for 104 further progress of rectification unit, as shown in figure 4, whole
Flowing unit 104 may include first transmission line 501, second transmission line 502, third transmission line 503 and diode 504；
Wherein, first transmission line 501 and the respective one end of second transmission line 502 are hanging；
The not hanging one end of first transmission line 501 and the not hanging one end of second transmission line 502 are passed with the third after connecting
Defeated line 503 and diode 504 connect.
In the present invention, the material of first transmission line 501, second transmission line 502 and third transmission line 503 can be identical
Metal material, alloy material etc., be also possible to different material.
A kind of preferably implementation, in the present invention, first transmission line 501, second transmission line 502 and third transmission line
503 material is identical.Such as it can be metal wire.
First transmission line, second transmission line, the material of third transmission line are identical, can be primary in circuit production technique
Property etching complete, need not move through the iterative process such as exposure mask, etching, can preferably improve the yield rate of circuit production.
Specifically, first transmission line 501, the value of second transmission line 502 and third transmission line 504 and antenna receive
Millimeter wave energy is related, more specifically, first transmission line 501, the value of second transmission line 502 and third transmission line 504 and
The millimetre wavelength that antenna receives is related.
Specifically, first transmission line value range is between 10 ohm~100 ohm.
Preferably implementation, the value of first transmission line are 1/12 λ to one kind, and wherein λ is the millimeter wave that antenna receives
Wavelength.
Specifically, second transmission line value range is between 10 ohm~100 ohm.
The value of a kind of preferably implementation, second transmission line is 1/8 λ, and wherein λ is the millimeter wave wave that antenna receives
It is long.
Specifically, third transmission line value range is between 10 ohm~100 ohm.
A kind of preferably implementation, third transmission line value are 1/4 λ, and wherein λ is the millimeter wave wave that antenna receives
It is long.
Specifically, the diode 504 in above-mentioned converting unit is Schottky diode.
In the technical solution set forth above of the embodiment of the present invention four, first transmission line, second transmission line and third are passed
Defeated line, characteristic impedance value are easier when manufacturing when big, and yield rate is higher.Specifically, in the embodiment of the present invention four
In technical solution set forth above, (transmission line includes the to the length for depending primarily on transmission line of transmission line role here
One, second and third transmission line).Characteristic impedance depends on the width of each transmission line.
Embodiment five
In the embodiment of the present invention five, as shown in figure 5, energy-storage units 105 include at least one capacitor 601, the capacitor 601
It can be one of mim type, the capacitance of the capacitor can be 0.05pf~0.5pf.
A kind of preferably implementation, in the technical solution proposed in the embodiment of the present invention five, energy-storage units 105 include one
A capacitor, the capacitor's capacity are 0.1pf.
Although the preferred embodiment of the application has been described, it is created once a person skilled in the art knows basic
Property concept, then additional changes and modifications may be made to these embodiments.So it includes excellent that the following claims are intended to be interpreted as
It selects embodiment and falls into all change and modification of the application range.
Obviously, those skilled in the art can carry out various modification and variations without departing from the essence of the application to the application
Mind and range.In this way, if these modifications and variations of the application belong to the range of the claim of this application and its equivalent technologies
Within, then the application is also intended to include these modifications and variations.
Claims (18)
1. a kind of millimeter wave fairing realized towards single-chip, including the antenna for receiving millimeter wave, which is characterized in that
It further include the first isolated location, the second isolated location, rectification unit and energy-storage units, in which:
First isolated location and antenna electrical connection, for the millimeter wave energy of receiving antenna transmission, and by millimeter wave
High fdrequency component in energy is transmitted separately to the second isolated location and rectification unit；
The rectification unit, for receiving the high fdrequency component of the first isolated location transmission, the high frequency division that will be received
Amount is rectified, and gives the rectification components obtained after rectification to second isolated location；
Second isolated location is electrically connected with the first isolated location and rectification unit respectively, for receiving first isolation
The high fdrequency component and described whole in the rectification component is isolated in rectification component after the rectified unit rectification of unit transmission
The rectification component of unit transmission is flowed, and the DC component is transmitted to energy-storage units；
The energy-storage units, for storing the DC component of the rectification unit transmission.
2. device as described in claim 1, which is characterized in that first isolated location includes at least one capacitor.
3. device as claimed in claim 2, which is characterized in that the capacitor is metal-insulating layer-metal capacitor MIM capacitor.
4. device as claimed in claim 2, which is characterized in that the capacitance range of the capacitor is 0.01 pico farad~0.2 pico farad.
5. device as claimed in claim 4, which is characterized in that the capacitance of the capacitor is 0.1 pico farad.
6. device as described in claim 1, which is characterized in that second isolated location includes at least one inductance.
7. device as claimed in claim 6, which is characterized in that the inductance is stratiform geometric pattern inductance.
8. device as claimed in claim 6, which is characterized in that the value range of the inductance is 0.1 nanohenry benefit~1 nanohenry
Benefit.
9. device as claimed in claim 7, which is characterized in that the value of the inductance is 0.5 nanohenry benefit.
10. device as described in claim 1, which is characterized in that the rectification unit, including first transmission line, the second transmission
Line, third transmission line and diode；
Wherein, respectively one end is hanging for the first transmission line and second transmission line；
The not hanging one end of the first transmission line and the not hanging one end of second transmission line, with connect after third transmission line and
Diode connection.
11. device as claimed in claim 10, which is characterized in that the first transmission line, second transmission line and third transmission
The material of line is identical.
12. device as claimed in claim 10, which is characterized in that the first transmission line value range is 10 ohm~100
Ohm.
13. device as claimed in claim 12, which is characterized in that the value of the first transmission line is the 1/12 of wavelength.
14. device as claimed in claim 10, which is characterized in that the second transmission line value range is 10 ohm~100
Ohm.
15. device as claimed in claim 14, which is characterized in that the value of the second transmission line is 1/8 λ.
16. device as claimed in claim 10, which is characterized in that the third transmission line value range is 10 ohm~100
Ohm.
17. device as claimed in claim 16, which is characterized in that the third transmission line value is the 1/4 of wavelength.
18. device as claimed in claim 10, which is characterized in that the diode is Schottky diode.
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| CN201811337846.9A CN109635607B (en) | 2018-11-12 | 2018-11-12 | A kind of millimeter wave fairing realized towards single-chip |
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| CN201811337846.9A CN109635607B (en) | 2018-11-12 | 2018-11-12 | A kind of millimeter wave fairing realized towards single-chip |
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Effective date of registration: 20201022 Address after: Room 405, building 2, Shuiqing Muhua garden, North 2nd Street, Zhongguancun, Haidian District, Beijing Patentee after: Han Xiaoxi Address before: 100080 Beijing Haidian District, Zhongguancun Street, No. 38, Building B, Block 1, 139 Patentee before: XIAOHAN SECURITY (BEIJING) TECHNOLOGY Co.,Ltd. |