CN109617408B - Based on the capacitor-clamped super high-gain boost converter of three-phase crisscross parallel - Google Patents

Based on the capacitor-clamped super high-gain boost converter of three-phase crisscross parallel Download PDF

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CN109617408B
CN109617408B CN201811584987.0A CN201811584987A CN109617408B CN 109617408 B CN109617408 B CN 109617408B CN 201811584987 A CN201811584987 A CN 201811584987A CN 109617408 B CN109617408 B CN 109617408B
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capacitor
node
inductance
clamped
gain
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CN109617408A (en
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李虹
曾洋斌
王文财
张波
吕金虎
郑琼林
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Beijing Jiaotong University
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Beijing Jiaotong University
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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of dc power input into dc power output
    • H02M3/02Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/158Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
    • H02M3/1584Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load with a plurality of power processing stages connected in parallel
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/56Power conversion systems, e.g. maximum power point trackers

Abstract

The invention discloses a kind of based on the capacitor-clamped super high-gain boost converter of three-phase crisscross parallel, comprising: load;Positive capacitor-clamped circuit, including first capacitor, the second capacitor, first diode and the second diode;Reciprocal capacitance clamp circuit, including third capacitor, the 4th capacitor, third diode and the 4th diode;Three-phase crisscross parallel Boost structure, including the first inductance, the second inductance, third inductance, first switch tube, second switch, third switching tube and input source.Three-phase crisscross parallel Boost structure is connected by first node and second node with positive capacitor-clamped circuit, it is connected by second node and third node with reciprocal capacitance clamp circuit, load is connected by the 6th node and the 7th node with positive capacitor-clamped circuit and reciprocal capacitance clamp circuit.The converter has voltage gain, the ultra-low input current ripple of superelevation, the characteristics of low voltage stress, generates electricity by way of merging two or more grid systems field suitable for fuel cell, photovoltaic cell.

Description

Based on the capacitor-clamped super high-gain boost converter of three-phase crisscross parallel
Technical field
It is the present invention relates to power electronics field, in particular to a kind of based on capacitor-clamped three-phase crisscross parallel superelevation Gain booster converter.
Background technique
Due to increasingly sharpening for environmental pollution, the exhaustion of petroleum resources, the renewable energy power generation technology of cleanliness without any pollution By favor, such as fuel cell and photovoltaic cell.However fuel cell and photovoltaic cell capable of generating power technology have two, First, the output voltage of fuel cell and photovoltaic cell is relatively low, generally only 20~50V, and the direct current of gird-connected inverter is female Line voltage is 400V/750V, needs high-gain converter that 20~50V is converted to the DC voltage of 400V/750V;Secondly being Fuel cell and photovoltaic cell are more sensitive to current ripples, and biggish current ripples can make the longevity of fuel cell and photovoltaic cell Life reduces, therefore the input current ripple of high-gain converter wants low.Meanwhile with industrial application to the performance of converter, at Originally, power density proposes increasingly higher demands, therefore is suitble to medium and small power occasions, and there are performance characteristics, high voltage to increase The booster converter of beneficial, low device cost, low input current ripple and high transformation efficiency is to need constantly to break through and update Key technology.
There are aiming at the problem that 1, solved there are mainly two types of method.One is to improve battery by the way that battery is connected The output voltage of side, but the maximum power search that this kind of method will lead to photovoltaic cell is relatively difficult, influences the reliable of equipment Property and energy conversion efficiency.Secondly being solved by high-gain converter, have some relevant high-gain transformation at present Device, such as coupling inductance type high-gain converter, switching capacity type high-gain converter, switched inductors type high-gain converter and base In the high-gain converter of voltage doubling unit.For switching capacity type high-gain converter, it is able to achieve higher voltage and increases Benefit, but it can lead to higher current spike due to capacitor charge and discharge in switching process, influence converter efficiency and can By property;Switched inductors type high-gain converter is due to the charging of its input side inductance in parallel, discharged in series, the electric current of input side Ripple is larger, influences the service life of battery.
For problem 2, Interleaving and Transformer Paralleling is currently mainly used to reduce the current ripples of input side, but general voltage Gain is relatively low.For example, a kind of two-phase crisscross parallel Boost that the relevant technologies are most basic, is become by two tradition Boost Parallel operation crisscross parallel forms, and can reduce the input current ripple of converter, but without the voltage gain of raising converter.For Raising converter voltage gain, another the relevant technologies propose two-phase crisscross parallel multiplication of voltage Boost, in tradition two A times die block is increased on the basis of staggered parallel connection Boost, keeps output voltage double, but structure is complex, Times die block includes that two capacitors and two diodes, voltage gain increase only one times.
Therefore, in order to realize simultaneously, the topological of the current ripples of reduction input side is still needed while higher voltage gain Want further research and development.
Summary of the invention
The present invention is directed to solve at least some of the technical problems in related technologies.
For this purpose, a kind of based on the capacitor-clamped super high gain boost change of three-phase crisscross parallel it is an object of the invention to propose Parallel operation, the converter have the characteristics of voltage gain, ultra-low input current ripple of superelevation, low voltage stress, are suitable for fuel Battery, photovoltaic cell generate electricity by way of merging two or more grid systems field.
In order to achieve the above objectives, the embodiment of the present invention proposes a kind of based on capacitor-clamped three-phase crisscross parallel superelevation increasing Beneficial booster converter, comprising: positive capacitor-clamped circuit, the capacitor-clamped circuit of forward direction includes first capacitor C1, second electricity Hold C2, first diode D1With the second diode D2, wherein the first capacitor C1One end be connected with first node, described One diode D1Anode and the second capacitor C2One end be connected in second node, the second diode D2Cathode and The second capacitor C2The other end be connected in the 6th node, the first capacitor C1The other end, the first diode D1's Cathode and the second diode D2Anode be connected with fourth node;Reciprocal capacitance clamp circuit, the reciprocal capacitance pincers Position circuit includes third capacitor C3, the 4th capacitor C4, third diode D3With the 4th diode D4, wherein the third capacitor C3 One end be connected with third node, the third diode D3Cathode and the 4th capacitor C4One end be connected in the second section Point, the 4th capacitor C4The other end and the 4th diode D4Anode be connected in the 7th node, the third capacitor C3 The other end, the third diode D3Anode and the 4th diode D4Cathode be connected in the 5th node;Three is staggered Boost structure in parallel, the three-phase crisscross parallel Boost structure include the first inductance L1, the second inductance L2, third inductance L3, One switching tube S1, second switch S2, third switching tube S3With input source Vin, wherein the first inductance L1One end, second Inductance L2One end and third inductance L3One end and the input source VinAnode be connected, the first inductance L1The other end It is connected with third node, the second inductance L2The other end be connected with second node, the third inductance L3The other end and One node is connected, the first switch tube S1Source electrode or emitter, second switch S2Source electrode or emitter and third switch Pipe S3Source electrode or emitter and the input source VinCathode be connected, the first switch tube S1Drain electrode or collector and Three nodes are connected, the second switch S2Drain electrode or collector be connected with second node, the third switching tube S3Drain electrode Or collector is connected with first node.
The embodiment of the present invention based on the capacitor-clamped super high-gain boost converter of three-phase crisscross parallel, it is staggered by three Boost structure, positive capacitor-clamped circuit and reciprocal capacitance clamp circuit are constituted, and have voltage gain, the ultralow input electricity of superelevation The characteristics of flow liner wave, low voltage stress, generates electricity by way of merging two or more grid systems field suitable for fuel cell, photovoltaic cell.
In addition, according to the above embodiment of the present invention based on capacitor-clamped three-phase crisscross parallel superelevation gain boosting inverter Device can also have following additional technical characteristic:
Further, in one embodiment of the invention, further includes: load RL, the load RLBy the 6th node and 7th node is connected with the reciprocal capacitance clamp circuit and the capacitor-clamped circuit of forward direction respectively.
Further, in one embodiment of the invention, the high-gain converter is tied by described three staggered Boost Structure, the capacitor-clamped circuit of the forward direction and the reciprocal capacitance clamp circuit are constituted, wherein on constituted mode, the three-phase Staggeredly Boost structure is the input terminal of the high-gain converter, the capacitor-clamped circuit of forward direction and the reciprocal capacitance pincers Position circuit is the output end of the high-gain converter.
Further, in one embodiment of the invention, wherein as the first switch tube S1, described second open Close pipe S2With the third switching tube S3When alternating movement, in first node to generating three level (V between second nodein/(1- D)、0、-Vin/ (1-D)), in second node to generating three level (V between third nodein/(1-D)、0、-Vin/ (1-D)), In, D is the first switch tube S1, the second switch S2With the third switching tube S3Duty ratio;When three intersection Wrong Boost structure generates the three level (V between the first node and the second nodein/(1-D)、0、-Vin/(1- When square-wave voltage D)), the second capacitor C described in the capacitor-clamped circuit of forward direction2Negative 2V under obtaining justin/ (1-D's) Voltage;When described three staggered Boost structures generate three level between the second node and the third node (Vin/(1-D)、0、-Vin/ (1-D)) square-wave voltage when, the 4th capacitor C described in the reciprocal capacitance clamp circuit4It can obtain On just under negative 2VinThe voltage of/(1-D).
Further, in one embodiment of the invention, the gain expressions of the super high-gain boost converter are such as Under:
Wherein, M3P-ICCBFor the voltage gain of the super high-gain boost converter, VoutFor the load RLThe electricity at both ends Pressure, VinFor the voltage of the input source, D is the first switch tube S1, the second switch S2With the third switching tube S3 Duty ratio.
Further, in one embodiment of the invention, under the inductor current continuous mode, the superelevation gain Booster converter includes the first operation mode, the second operation mode, third operation mode, the 4th work in a switch periods Mode, the 5th operation mode and the 6th operation mode.
Further, in one embodiment of the invention, first operation mode, the third operation mode and institute It is identical to state the 5th operation mode feature, comprising: the first switch tube S1, the second switch S2With the third switching tube And S3It is both turned on, the first inductance L1, the second inductance L2With the third inductance and L3Equal constant pressure magnetizes, and described second Capacitor C2With the 4th capacitor C4For the load RLPower supply.
Further, in one embodiment of the invention, second operation mode includes: the first switch tube S1 With the third switching tube S3Conducting, the first inductance L1With the third inductance L3Constant pressure magnetizes, the second switch S2 Shutdown, the input source VinWith the second inductance L2To the first capacitor C1Charging, the input source Vin, it is described second electricity Feel L2With the third capacitor C3Series connection is the 4th capacitor C4Charging, the second capacitor C2With the 4th capacitor C4For institute State load RLPower supply.
Further, in one embodiment of the invention, the 4th operation mode includes: the first switch tube S1 With the second switch S2Conducting, the first inductance L1With the second inductance L2Constant pressure magnetizes, the third switching tube S3 Shutdown, the input source Vin, the third inductance L3With the first capacitor C1Series connection is the second capacitor C2Charging, it is described Second capacitor C2With the 4th capacitor C4For the load RLPower supply.
Further, in one embodiment of the invention, the 6th operation mode includes: the second switch S2 With the third switching tube S3Conducting, the second inductance L2With the third inductance L3Constant pressure magnetizes, the first switch tube S1 Shutdown, the input source VinWith the first inductance L1To the third capacitor C3Charging, the second capacitor C2With the described 4th Capacitor C4For the load RLPower supply.
The additional aspect of the present invention and advantage will be set forth in part in the description, and will partially become from the following description Obviously, or practice through the invention is recognized.
Detailed description of the invention
Above-mentioned and/or additional aspect and advantage of the invention will become from the following description of the accompanying drawings of embodiments Obviously and it is readily appreciated that, in which:
Fig. 1 is according to an embodiment of the invention based on capacitor-clamped three-phase crisscross parallel superelevation gain boosting inverter The structural schematic diagram of device;
Fig. 2 is three-phase crisscross parallel Boost structural schematic diagram according to an embodiment of the invention;
Fig. 3 is the structural schematic diagram of the capacitor-clamped circuit of forward direction according to an embodiment of the invention;
Fig. 4 is the structural schematic diagram of reciprocal capacitance clamp circuit according to an embodiment of the invention;
Fig. 5 is according to an embodiment of the invention based on capacitor-clamped three-phase crisscross parallel superelevation gain boosting inverter The main theory work wave schematic diagram of device;
Fig. 6 is according to an embodiment of the invention based on capacitor-clamped three-phase crisscross parallel superelevation gain boosting inverter The circuit diagram of first operation mode of device, third operation mode and the 5th operation mode;
Fig. 7 is according to an embodiment of the invention based on capacitor-clamped three-phase crisscross parallel superelevation gain boosting inverter The circuit diagram of second operation mode of device;
Fig. 8 is according to an embodiment of the invention based on capacitor-clamped three-phase crisscross parallel superelevation gain boosting inverter The circuit diagram of 4th operation mode of device;
Fig. 9 is according to an embodiment of the invention based on capacitor-clamped three-phase crisscross parallel superelevation gain boosting inverter The circuit diagram of 6th operation mode of device;
Figure 10 is accord to a specific embodiment of that present invention based on capacitor-clamped three-phase crisscross parallel superelevation gain liter The gain comparison schematic diagram of buckling parallel operation and traditional Boost;
Figure 11 is according to an embodiment of the invention based on the capacitor-clamped super high gain boost change of three-phase crisscross parallel The key operation waveforms simulation result schematic diagram of parallel operation;
Figure 12 is according to an embodiment of the invention based on the capacitor-clamped super high gain boost change of three-phase crisscross parallel The voltage stress simulation result schematic diagram of parallel operation;
Figure 13 is according to an embodiment of the invention based on the capacitor-clamped super high gain boost change of three-phase crisscross parallel The schematic diagram of the output clamping voltag of parallel operation;
Figure 14 is according to an embodiment of the invention based on the capacitor-clamped super high gain boost change of three-phase crisscross parallel The input current ripple and tradition Boost input current ripple contrast simulation result schematic diagram of parallel operation;
Figure 15 is according to an embodiment of the invention based on the capacitor-clamped super high gain boost change of three-phase crisscross parallel The closed-loop control simulation result schematic diagram of parallel operation.
Specific embodiment
The embodiment of the present invention is described below in detail, examples of the embodiments are shown in the accompanying drawings, wherein from beginning to end Same or similar label indicates same or similar element or element with the same or similar functions.Below with reference to attached The embodiment of figure description is exemplary, it is intended to is used to explain the present invention, and is not considered as limiting the invention.
Describe to propose according to embodiments of the present invention with reference to the accompanying drawings based on capacitor-clamped three-phase crisscross parallel superelevation Gain booster converter.
Fig. 1 is one embodiment of the invention based on the capacitor-clamped super high-gain boost converter of three-phase crisscross parallel Structural schematic diagram.
As shown in Figure 1, should include: three intersections based on the capacitor-clamped super high-gain boost converter 10 of three-phase crisscross parallel Mistake parallel connection Boost structure 100, positive capacitor-clamped circuit 200 and reciprocal capacitance clamp circuit 300.
Wherein, three-phase crisscross parallel Boost structure 100 is as shown in Fig. 2, include the first inductance L1, the second inductance L2, third Inductance L3, first switch tube S1, second switch S2, third switching tube S3With input source Vin, wherein the first inductance L1One end, Second inductance L2One end and third inductance L3One end and input source VinAnode be connected, the first inductance L1The other end and 3. three nodes are connected, the second inductance L2The other end be 2. connected with second node, third inductance L3The other end and first node 1. It is connected, first switch tube S1Source electrode or emitter, second switch S2Source electrode or emitter and third switching tube S3Source electrode Or emitter and input source VinCathode be connected, first switch tube S1Drain electrode or collector be 3. connected with third node, second Switching tube S2Drain electrode or collector be 2. connected with second node, third switching tube S3Drain electrode or collector and first node 1. It is connected.
Positive capacitor-clamped circuit 200 is as shown in figure 3, include first capacitor C1, the second capacitor C2, first diode D1With Second diode D2, wherein first capacitor C1One end be 1. connected with first node, first diode D1Anode and second electricity Hold C2One end be 2. connected with second node, the second diode D2Cathode and the second capacitor C2The other end and the 6th node 6. It is connected, first capacitor C1The other end, first diode D1Cathode and the second diode D2Anode with fourth node 4. phase Even;
Reciprocal capacitance clamp circuit 300 is as shown in figure 4, reciprocal capacitance clamp circuit 300 includes third capacitor C3, the 4th electricity Hold C4, third diode D3With the 4th diode D4, wherein third capacitor C3One end be 3. connected with third node, the three or two pole Pipe D3Cathode and the 4th capacitor C4One end be 2. connected with second node, the 4th capacitor C4The other end and the 4th diode D4 Anode be connected 7. with the 7th node, third capacitor C3The other end, third diode D3Anode and the 4th diode D4Yin 5. pole is connected with the 5th node.
Further, in one embodiment of the invention, load by the 6th node 6. with the 7th node 7. and reversely Capacitor-clamped circuit 300 is connected with positive capacitor-clamped circuit 200.
Further, in an example of the present invention, high-gain converter 10 is by described three staggered Boost structures 100, positive capacitor-clamped circuit 200 and reciprocal capacitance clamp circuit 300 are constituted, wherein on constituted mode, three is staggered Boost structure 100 is the input terminal of high-gain converter 10, positive capacitor-clamped circuit 200 and reciprocal capacitance clamp circuit 300 For the output end of high-gain converter 10, three staggered Boost structures 100 by first node 1 zero, second node 2 zero with just It is connected to capacitor-clamped circuit 200, three staggered Boost structures 100 pass through second node 2 zero, third node 3 zero and reversed electricity Hold clamp circuit 300 to be connected.
Further, in an example of the present invention, as first switch tube S1, second switch S2With third switching tube S3When alternating movement, first node 1. and second node 2. between generate three level (Vin/(1-D)、0、-Vin/ (1-D)), In Second node 2. and third node 3. between generate three level (Vin/(1-D)、0、-Vin/ (1-D)), wherein D is first switch tube S1, second switch S2With third switching tube S3Duty ratio.
Further, in one embodiment of the invention, when the input terminal first node of positive capacitor-clamped circuit 200 1. and second node 2. between access three level (Vin/(1-D)、0、-Vin/ (1-D)) square-wave voltage when, the second capacitor C2It can obtain On just under negative 2VinThe voltage of/(1-D);When reciprocal capacitance clamp circuit 300 input terminal second node 2. with third node 3. it Between access three level (Vin/(1-D)、0、-Vin/ (1-D)) square-wave voltage when, the 4th capacitor C4Negative 2V under obtaining justin/(1- D voltage).
Further, in one embodiment of the invention, the input terminal of high-gain converter 10 is three staggered Boost Structure 100, input side have the function of ultralow input ripple, are suitable for fuel cell, photovoltaic cell capable of generating power technology.
Further, in one embodiment of the invention, positive capacitor-clamped circuit 200 and reciprocal capacitance clamp circuit 300 have the function of improving converter voltage gain, reduce device voltage stress, and the voltage gain of high-gain converter 10 is to pass 4 times of system Boost voltage gain, it is the 1/ of output voltage that the voltage stress of switching tube is identical as traditional Boost circuit 4, the voltage stress of diode is the 1/2 of output voltage, and high-gain converter has the spy of high voltage gain, low voltage stress Point.
Further, in one embodiment of the invention, in inductor current continuous mode (Current continuous Mode, CCM) under, super high-gain boost converter 10 includes the first operation mode, the second Working mould in a switch periods State, third operation mode, the 4th operation mode, the 5th operation mode and the 6th operation mode, Fig. 5 are converter master shown in Fig. 1 Working waveform figure is wanted, Fig. 6-Fig. 9 is each operation mode figure of converter shown in Fig. 1, specifically:
First operation mode, third operation mode and the 5th operation mode feature are identical, operation mode figure as shown in fig. 6, It include: the first, second, and third switching tube S1、S2And S3It is both turned on, the first, second, and third inductance L1、L2And L3Equal constant pressure is filled Magnetic, the first, second, and third inductance L1、L2And L3Electric current iL1、iL2And iL3It is linearly increasing, the second capacitor C2With the 4th capacitor C4To load RLPower supply, the second, the 4th capacitor C2、C4Voltage vC2、vC4Forward direction decline, associated electrical parameters formula are as follows:
Wherein, t0、t1For the starting and ending time of the first operation mode, t2、t3Starting and knot for third operation mode Beam time, t4、t5For the starting and ending time of the 5th operation mode;
Second operation mode is as shown in fig. 7, first, third switching tube S1、S3Conducting, first, third inductance L1、L3Constant pressure It magnetizes, first, third inductance L1、L3Electric current iL1、iL3It is linearly increasing, second switch S2Shutdown, input source VinWith the second electricity Feel L2To first capacitor C1Charging, the second inductance L2Electric current iL2Decline, first capacitor C1Voltage vC1Forward direction decline, input source Vin, the second inductance L2With third capacitor C3Series connection is the 4th capacitor C4Charging, third, the 4th capacitor C3、C4Voltage vC3、vC4Just It ramps up, the second capacitor C2With the 4th capacitor C4To load RLPower supply, the second capacitor C2Voltage vC2Forward direction decline, related electric ginseng Number formula are as follows:
Wherein, t1、t2For the starting and ending time of the second operation mode;
4th operation mode is as shown in figure 8, the first, second switching tube S1、S2Conducting, the first, second inductance L1、L2Constant pressure It magnetizes, the first, second inductance L1、L2Electric current iL1、iL2It is linearly increasing, third switching tube S3Shutdown, input source Vin, third inductance L3With first capacitor C1Series connection is the second capacitor C2Charging, the first, second capacitor C1、C2Voltage vC1、vC2It is positive to rise, second Capacitor C2With the 4th capacitor C4To load RLPower supply, the 4th capacitor C4Voltage vC4Forward direction reduces, associated electrical parameters formula are as follows:
Wherein, t3、t4For the starting and ending time of the 4th operation mode;
6th operation mode is as shown in figure 9, second, third switching tube S2、S3Conducting, second, third inductance L2、L3Constant pressure It magnetizes, second, third inductance L2、L3Electric current iL2、iL3It is linearly increasing, first switch tube S1Shutdown, input source VinWith the first electricity Feel L1To third capacitor C3Charging, the second capacitor C2With the 4th capacitor C4To load RLPower supply, third, the 4th capacitor C3、C4Voltage vC3、vC4Positive decline, associated electrical parameters formula are as follows:
Wherein, t5、t6For the starting and ending time of the 6th operation mode.
Further, 3P-ICCB (the Three Phase Interleaved Clamping that the embodiment of the present invention is proposed Capacitor Boost) converter voltage gain expression formula are as follows:
Wherein, M3P-ICCBFor the gain of super high-gain boost converter, VoutTo load RLThe voltage at both ends, VinFor input The voltage in source, D are first switch tube S1, second switch S2With third switching tube S3Duty ratio.
Further, the voltage gain of 3P-ICCB converter is compared with tradition Boost, comparison diagram as shown in figure 5, The 3P-ICCB converter that the embodiment of the present invention is proposed is compared with traditional Boost circuit, and the voltage gain with superelevation can Effectively realize voltage increase function.
In one particular embodiment of the present invention, to this based on the capacitor-clamped super high gain boost of three-phase crisscross parallel Converter carries out simulating, verifying.
Specifically, it in order to verify the theory analysis of 3P-ICCB converter, is emulated according to the 3P-ICCB converter in the following table 1 Parameter has built emulation platform.Table 1 is 3P-ICCB converter simulation parameter table.
Parameter name Parameter label Parameter value
Input source Vin 48V
Switching frequency fs 200kHz
Duty ratio D 0.744
Inductance L1、L2、L3 300μH
Output loading RL 188Ω
First capacitor C1 13.3μF
Second capacitor C2 13.3μF
Third capacitor C3 13.3μF
4th capacitor C4 13.3μF
Firstly, under the parameter of table 1, as shown in formula 5,3P-ICCB converter output voltage reaches according to theory analysis 750V;As shown in formula 6, the output power of 3P-ICCB converter is 3kW;As shown in formula 7, the Boost under identical parameter The output voltage of converter only has 187V;As shown in formula 8, the output power of Boost only has 187W.Wherein, formula 5, formula 6, formula 7 and formula 8 are as follows respectively:
Further, first switch tube S1, second switch S2With third switching tube S3Blocking voltage vdsIt is approximately equal to 3P- Voltage is born with Boost switching tube having the same, theoretically in 1 parameter of table in the 1/4 of ICCB converter output voltage It is down 187V.First diode D1, the second diode D2, third diode D3With the 4th diode D4Blocking voltage vDIt is approximately equal to The 1/2 of 3P-ICCB converter output voltage is theoretically 374V under 1 parameter of table.Simulation result is as shown in figure 12, includes First switch tube S1, second switch S2, third switching tube S3, first diode D1, the second diode D2, third diode D3With 4th diode D4End voltage waveform, so that the voltage stress for obtaining switching tube and diode is respectively 187V and 374V, with Theory analysis is consistent.
Further, the emulation key operation waveforms of 3P-ICCB converter in ccm mode are as shown in figure 11, Figure 11's Emulation key operation waveforms are consistent substantially with the theoretical key operation waveforms of Fig. 6, to demonstrate the correct of operational modal analysis Property.
Further, output source Vout, the second capacitor C2With the 4th capacitor C4Voltage simulation waveform it is as shown in figure 13, thus Demonstrate the principle analysis of output voltage composition.
Further, the input current ripple of 3P-ICCB converter and traditional Boost circuit are under equal-wattage grade The comparison of input current ripple is tradition so that the input current ripple of converter is more extra small due to three staggered as shown in figure 14 The 1/3 of the current ripples of Boost, under 3kW power grade, input current ripple is only 0.2A.
In addition, 3P-ICCB converter can be realized closed-loop control, wherein the starting waveform of closed-loop control output voltage is such as Shown in Figure 15, output voltage overshoot in Dynamic Regulating Process is smaller in Figure 15, and it is short to reach the stable time, has preferable Controllability.
The emulation platform built according to parameter listed by table 1 simulation results show the correctness of theoretical analysis result, Superelevation gain advantage, the ultra-low input current ripple, low device electricity that 3P-ICCB converter has further are convincingly demonstrated The advantage of compression.Therefore in an embodiment of the present invention, based on three staggered Boost structures 100, positive capacitor-clamped circuit 200 and reciprocal capacitance clamp circuit 300 proposed based on the capacitor-clamped super high-gain boost converter of three-phase crisscross parallel 10, the voltage gain with superelevation, voltage gain is 4/ (1-D), wherein D is first switch tube S1, second switch S2Account for Sky ratio and third switching tube S3Duty ratio, and switch tube voltage stress is constant, and diode stress only doubles.In addition, this The converter of invention example has extra small current ripples, and has good controllability, to be high-gain transformation of electrical energy Application provides a kind of simple and practical topological structure.
It is proposed according to embodiments of the present invention based on the capacitor-clamped super high-gain boost converter of three-phase crisscross parallel, can To use output for three-phase crisscross parallel Boost structure, positive capacitor-clamped circuit and reciprocal capacitance clamp circuit triplicity Voltage reaches 4 times of traditional Boost, and does not increase the voltage stress of switching tube, so that the voltage gain of booster converter Superelevation, input current ripple is extra small, and device voltage stress is low.
In the description of the present invention, it is to be understood that, term " center ", " longitudinal direction ", " transverse direction ", " length ", " width ", " thickness ", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom" "inner", "outside", " up time The orientation or positional relationship of the instructions such as needle ", " counterclockwise ", " axial direction ", " radial direction ", " circumferential direction " be orientation based on the figure or Positional relationship is merely for convenience of description of the present invention and simplification of the description, rather than the device or element of indication or suggestion meaning must There must be specific orientation, be constructed and operated in a specific orientation, therefore be not considered as limiting the invention.
In addition, term " first ", " second " are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance Or implicitly indicate the quantity of indicated technical characteristic.Define " first " as a result, the feature of " second " can be expressed or Implicitly include at least one this feature.In the description of the present invention, the meaning of " plurality " is at least two, such as two, three It is a etc., unless otherwise specifically defined.
In the present invention unless specifically defined or limited otherwise, term " installation ", " connected ", " connection ", " fixation " etc. Term shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or integral;It can be mechanical connect It connects, is also possible to be electrically connected;It can be directly connected, can also can be in two elements indirectly connected through an intermediary The interaction relationship of the connection in portion or two elements, unless otherwise restricted clearly.For those of ordinary skill in the art For, the specific meanings of the above terms in the present invention can be understood according to specific conditions.
In the present invention unless specifically defined or limited otherwise, fisrt feature in the second feature " on " or " down " can be with It is that the first and second features directly contact or the first and second features pass through intermediary mediate contact.Moreover, fisrt feature exists Second feature " on ", " top " and " above " but fisrt feature be directly above or diagonally above the second feature, or be merely representative of First feature horizontal height is higher than second feature.Fisrt feature can be under the second feature " below ", " below " and " below " One feature is directly under or diagonally below the second feature, or is merely representative of first feature horizontal height less than second feature.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show The description of example " or " some examples " etc. means specific features, structure, material or spy described in conjunction with this embodiment or example Point is included at least one embodiment or example of the invention.In the present specification, schematic expression of the above terms are not It must be directed to identical embodiment or example.Moreover, particular features, structures, materials, or characteristics described can be in office It can be combined in any suitable manner in one or more embodiment or examples.In addition, without conflicting with each other, the skill of this field Art personnel can tie the feature of different embodiments or examples described in this specification and different embodiments or examples It closes and combines.
Although the embodiments of the present invention has been shown and described above, it is to be understood that above-described embodiment is example Property, it is not considered as limiting the invention, those skilled in the art within the scope of the invention can be to above-mentioned Embodiment is changed, modifies, replacement and variant.

Claims (9)

1. a kind of based on the capacitor-clamped super high-gain boost converter of three-phase crisscross parallel characterized by comprising
Positive capacitor-clamped circuit, the capacitor-clamped circuit of forward direction includes first capacitor C1, the second capacitor C2, first diode D1With the second diode D2, wherein the first capacitor C1One end be connected with first node, the first diode D1Sun Pole and the second capacitor C2One end be connected in second node, the second diode D2Cathode and the second capacitor C2 The other end be connected in the 6th node, the first capacitor C1The other end, the first diode D1Cathode and described second Diode D2Anode be connected with fourth node;
Reciprocal capacitance clamp circuit, the reciprocal capacitance clamp circuit include third capacitor C3, the 4th capacitor C4, third diode D3With the 4th diode D4, wherein the third capacitor C3One end be connected with third node, the third diode D3Yin Pole and the 4th capacitor C4One end be connected in second node, the 4th capacitor C4The other end and the 4th diode D4Anode be connected in the 7th node, the third capacitor C3The other end, the third diode D3Anode and the described 4th Diode D4Cathode be connected with the 5th node;
Three-phase crisscross parallel Boost structure, the three-phase crisscross parallel Boost structure include the first inductance L1, the second inductance L2、 Third inductance L3, first switch tube S1, second switch S2, third switching tube S3With input source Vin, wherein first inductance L1One end, the second inductance L2One end and third inductance L3One end and the input source VinAnode be connected, it is described first electricity Feel L1The other end be connected with third node, the second inductance L2The other end be connected with second node, the third inductance L3 The other end be connected with first node, the first switch tube S1Source electrode or emitter, second switch S2Source electrode or transmitting Pole and third switching tube S3Source electrode or emitter and the input source VinCathode be connected, the first switch tube S1Drain electrode Or collector is connected with third node, the second switch S2Drain electrode or collector be connected with second node, the third Switching tube S3Drain electrode or collector be connected with first node;
Load RL, the load RLBy the 6th node and the 7th node respectively with the reciprocal capacitance clamp circuit and it is described just It is connected to capacitor-clamped circuit.
2. according to claim 1 based on the capacitor-clamped super high-gain boost converter of three-phase crisscross parallel, feature It is, wherein
The high-gain converter is by described three staggered Boost structures, the capacitor-clamped circuit of the forward direction and the reversed electricity Hold clamp circuit to constitute, wherein on constituted mode, the three staggered Boost structure is the defeated of the high-gain converter Enter end, the capacitor-clamped circuit of forward direction and the reciprocal capacitance clamp circuit are the output end of the high-gain converter.
3. according to claim 1 based on the capacitor-clamped super high-gain boost converter of three-phase crisscross parallel, feature It is, wherein
As the first switch tube S1, described second switch S2With the third switching tube S3When alternating movement, in first segment Point is to generating three level (V between second nodein/(1-D)、0、-Vin/ (1-D)), it is produced in second node between third node Raw three level (Vin/(1-D)、0、-Vin/ (1-D)), wherein D is the first switch tube S1, the second switch S2And institute State third switching tube S3Duty ratio;
When described three staggered Boost structures generate the three level (V between the first node and the second nodein/ (1-D)、0、-Vin/ (1-D)) square-wave voltage when, the second capacitor C described in the capacitor-clamped circuit of forward direction2It can obtain just Under negative 2VinThe voltage of/(1-D);
When described three staggered Boost structures generate the three level (V between the second node and the third nodein/ (1-D)、0、-Vin/ (1-D)) square-wave voltage when, the 4th capacitor C described in the reciprocal capacitance clamp circuit4It can obtain just Under negative 2VinThe voltage of/(1-D).
4. according to claim 1 based on the capacitor-clamped super high-gain boost converter of three-phase crisscross parallel, feature It is, the gain expressions of the super high-gain boost converter are as follows:
Wherein, M3P-ICCBFor the voltage gain of the super high-gain boost converter, VoutFor the load RLThe voltage at both ends, Vin For the voltage of the input source, D is the first switch tube S1, the second switch S2With the third switching tube S3Account for Empty ratio.
5. according to claim 1 based on the capacitor-clamped super high-gain boost converter of three-phase crisscross parallel, feature It is, under the inductor current continuous mode, the super high-gain boost converter includes first in a switch periods Operation mode, the second operation mode, third operation mode, the 4th operation mode, the 5th operation mode and the 6th operation mode.
6. according to claim 5 based on the capacitor-clamped super high-gain boost converter of three-phase crisscross parallel, feature It is, first operation mode, the third operation mode are identical with the 5th operation mode feature, comprising:
The first switch tube S1, the second switch S2With the third switching tube and S3It is both turned on, the first inductance L1、 The second inductance L2With the third inductance and L3Equal constant pressure magnetizes, the second capacitor C2With the 4th capacitor C4For institute State load RLPower supply.
7. according to claim 5 based on the capacitor-clamped super high-gain boost converter of three-phase crisscross parallel, feature It is, second operation mode includes:
The first switch tube S1With the third switching tube S3Conducting, the first inductance L1With the third inductance L3Constant pressure is filled Magnetic, the second switch S2Shutdown, the input source VinWith the second inductance L2To the first capacitor C1Charging, it is described Input source Vin, the second inductance L2With the third capacitor C3Series connection is the 4th capacitor C4Charging, the second capacitor C2 With the 4th capacitor C4For the load RLPower supply.
8. according to claim 5 based on the capacitor-clamped super high-gain boost converter of three-phase crisscross parallel, feature It is, the 4th operation mode includes:
The first switch tube S1With the second switch S2Conducting, the first inductance L1With the second inductance L2Constant pressure is filled Magnetic, the third switching tube S3Shutdown, the input source Vin, the third inductance L3With the first capacitor C1Series connection is described Second capacitor C2Charging, the second capacitor C2With the 4th capacitor C4For the load RLPower supply.
9. according to claim 5 based on the capacitor-clamped super high-gain boost converter of three-phase crisscross parallel, feature It is, the 6th operation mode includes:
The second switch S2With the third switching tube S3Conducting, the second inductance L2With the third inductance L3Constant pressure is filled Magnetic, the first switch tube S1Shutdown, the input source VinWith the first inductance L1To the third capacitor C3Charging, it is described Second capacitor C2With the 4th capacitor C4For the load RLPower supply.
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