CN1095441C - Preparation of nanometer-level silicon material - Google Patents
Preparation of nanometer-level silicon material Download PDFInfo
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- CN1095441C CN1095441C CN00117242A CN00117242A CN1095441C CN 1095441 C CN1095441 C CN 1095441C CN 00117242 A CN00117242 A CN 00117242A CN 00117242 A CN00117242 A CN 00117242A CN 1095441 C CN1095441 C CN 1095441C
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- silicon
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- silicon material
- sic
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- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 239000002210 silicon-based material Substances 0.000 title abstract description 3
- 239000000843 powder Substances 0.000 claims abstract description 7
- 238000010438 heat treatment Methods 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims abstract description 6
- 239000005543 nano-size silicon particle Substances 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 2
- 238000002791 soaking Methods 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 29
- 239000010703 silicon Substances 0.000 abstract description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 25
- 238000000034 method Methods 0.000 abstract description 10
- 230000003287 optical effect Effects 0.000 abstract description 8
- 239000002245 particle Substances 0.000 abstract description 7
- 238000011160 research Methods 0.000 abstract description 4
- 230000001681 protective effect Effects 0.000 abstract description 3
- 239000002994 raw material Substances 0.000 abstract description 3
- 238000001704 evaporation Methods 0.000 abstract 1
- 230000002349 favourable effect Effects 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
- 238000005086 pumping Methods 0.000 abstract 1
- 239000002086 nanomaterial Substances 0.000 description 7
- 150000003376 silicon Chemical class 0.000 description 4
- 238000009413 insulation Methods 0.000 description 3
- 239000002070 nanowire Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910021426 porous silicon Inorganic materials 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 235000013312 flour Nutrition 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
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Abstract
The present invention relates to a preparation method of nanometer-level silicon material. The method which is also called as a heating evaporation method comprises the steps: using SiC powder as raw material, pumping vacuum in advance, supplying inert gas used as a protective atmosphere, heating to 1600 to 2000 DEG C, keeping the temperature for a certain time so as to prepare nanometer material with nanometer-level silicon quantum lines. The silicon quantum lines grow in the direction which is perpendicular to the surfaces of SiC particles and have certain orderliness which is favorable to the research of silicon optical waveguide and relevant silicon photoelectric devices. The method has the advantages of simple process, low cost of raw material and wide prospects of application.
Description
The present invention relates to a kind of preparation method of nano silicon material.
Along with opticfiber communication and rapid development of computer, originally the electrical interconnection between the computer is replaced by optical fiber interconnections gradually.In robot calculator, list the light interconnection in, be called as mixed light/robot calculator; If replace unicircuit with integrated optical circuit, be exactly optical computer, utilize the high parallelism (＞10 of light
6) and fast-response (＜10
-9S), the speed of following full optical computer can surpass 10
15Bit/s.This will be a supercomputer
10,000 times of CRAY-3 arithmetic speed.Because almost being the large-scale integrated circuit by silicon without exception, the CPU in the present advanced robot calculator constitutes, therefore be all must start with, because have only silicon ability ultra-large integrated at present from silicon with integrated optical circuit or with the large-scale integrated circuit that the integrated electro sub-loop replaces silicon among the CPU.Therefore, because silicon optical waveguide is the main means that realize the interconnection of integrated optical circuit light, the utilisation technology of the optical waveguides of research silicon and relevant silicon photoelectric device is also just extremely urgent.In the present age, obtained great success based on the microelectronics of silicon.But, but to make slow progress based on the research of the photoelectric device of silicon, this mainly is owing to it is believed that in early days the band gap of silicon is smaller, can not visible emitting caused.But in fact, there is a kind of method can be used for increasing the band gap of silicon, makes its visible emitting, thereby silicon is used for the research of photoelectric device.This method is exactly to reduce the dimension of material as far as possible, as quantum well, and quantum wire or quantum dot, here the face current carrier is restricted, thereby can increase the gap that can be with.It has been found that porous silicon has more intense visible radiation, particularly silicon nanowire, this demonstrates silicon tempting prospect on photoelectric device.Yet the growth mechanism of porous silicon is quite complicated, and its luminous physical mechanism also still exists dispute.At present, the method for making this silicon nanowire mainly contains two kinds: thermal evaporation method and laser burn method.The starting material that they adopted all are silica flours, and cost is higher, and the silicon line of working it out is a lack of alignment.
The purpose of this invention is to provide a kind of preparation of nanomaterials that forms silicon quantum wire, this silicon nanowire is orderly, and perpendicular to the surface growth of SiC particulate, and production method is simple, and cost is low.
In order to achieve the above object, the present invention adopts following processing step:
1). with SiC powder and heating unit forvacuum to 4.0 * 10
-2More than the torr, logical then rare gas element is as protective atmosphere;
2). the SiC powder is heated to 1600～2000 ℃, is incubated 30 minutes to 2 hours.
For with the resulting silicon materials of top preparation method, we observe with SEM, and some has also carried out the EDX energy spectrum analysis.Our needed nano-silicon quantum wire structure has appearred in the SiC particle that heats under Ar atmosphere, and the I of its diameter reaches 20nm, the longlyest can surpass 1 μ m.The nanostructure of this silicon is perpendicular to the growth of SiC particle surface, presents certain order.Utilize present method to produce the nano material that forms silicon quantum wire, method is fairly simple, and equipment requirements is not high, and raw materials used SiC cost is low.
The invention will be further described below in conjunction with accompanying drawing.
Fig. 1 is the SEM figure at 35 minutes SiC particle surface of Ar atmosphere insulation.
Fig. 2 is the SEM figure at 45 minutes SiC particle surface of Ar atmosphere insulation.
Fig. 3 is the SEM figure at 50 minutes SiC particle surface of Ar atmosphere insulation.
In Fig. 1 to Fig. 3,1,2,3 are respectively the silicon quantum wire structure, and its diameter minimum can reach 20nm, the longlyest can reach 1 μ m, and from its corresponding power spectrum, these nanostructures should be silicon.Can see also that from figure the nanostructure of this silicon is perpendicular to SiC particle surface growth, presents certain order.
Embodiment:
Get the SiC powder as starting material, place heating unit, forvacuum to 4.0 * 10
-2More than the torr, lead to the Ar rare gas element as protective atmosphere then in device, begin heating then, temperature is got 1600 ℃, 1800 ℃, 2000 ℃ respectively, and soaking time was respectively 30,35,40,45 and 50 minutes, and the result as shown in Table 1.Under these conditions, we can both obtain the nanostructure of silicon.For different forvacuum: 4.0 * 10
-2Torr, 1.0 * 10
-2Torr, 1.0 * 10
-3Torr, 1.0 * 10
-4Torr can obtain silicon nanostructure equally.
Resulting result under different time of table one, the temperature condition
Claims (2)
1. the preparation method of a nano silicon material is characterized in that processing step is:
1). with SiC powder and heating unit forvacuum to 4.0 * 10
-2More than the torr, logical then rare gas element is as shielding gas;
2). the SiC powder is heated to 1600～2000 ℃, is incubated 30 minutes to 2 hours.
2. the preparation method of a nano silicon material as claimed in claim 1 is characterized in that forvacuum to 4.0 * 10
2Torr, logical then Ar gas is as shielding gas; The SiC powder is heated to 1600 ℃, and soaking time is 30 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN00117242A CN1095441C (en) | 2000-07-07 | 2000-07-07 | Preparation of nanometer-level silicon material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN00117242A CN1095441C (en) | 2000-07-07 | 2000-07-07 | Preparation of nanometer-level silicon material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1277152A CN1277152A (en) | 2000-12-20 |
| CN1095441C true CN1095441C (en) | 2002-12-04 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN00117242A Expired - Fee Related CN1095441C (en) | 2000-07-07 | 2000-07-07 | Preparation of nanometer-level silicon material |
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| Country | Link |
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| CN (1) | CN1095441C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100415952C (en) * | 2006-12-28 | 2008-09-03 | 上海交通大学 | Method for synthesizing ordered array of single crystal Sic Nano filament with small diameter through heat evaporation method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1191520A (en) * | 1995-07-14 | 1998-08-26 | 昭和铝株式会社 | Process for producing high-purity silicon |
| CN1630196A (en) * | 2003-12-17 | 2005-06-22 | 沃福森微电子股份有限公司 | Clock synchroniser |
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2000
- 2000-07-07 CN CN00117242A patent/CN1095441C/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1191520A (en) * | 1995-07-14 | 1998-08-26 | 昭和铝株式会社 | Process for producing high-purity silicon |
| CN1630196A (en) * | 2003-12-17 | 2005-06-22 | 沃福森微电子股份有限公司 | Clock synchroniser |
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| Publication number | Publication date |
|---|---|
| CN1277152A (en) | 2000-12-20 |
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