CN109412430A - A kind of stack bus bar with exchange exit - Google Patents

A kind of stack bus bar with exchange exit Download PDF

Info

Publication number
CN109412430A
CN109412430A CN201811366763.2A CN201811366763A CN109412430A CN 109412430 A CN109412430 A CN 109412430A CN 201811366763 A CN201811366763 A CN 201811366763A CN 109412430 A CN109412430 A CN 109412430A
Authority
CN
China
Prior art keywords
bus bar
busbar
exchange
input
alternating current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201811366763.2A
Other languages
Chinese (zh)
Inventor
胡卫丰
马汝祥
胥峥
侍红兵
周洪益
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
State Grid Corp of China SGCC
Yancheng Power Supply Co of State Grid Jiangsu Electric Power Co Ltd
Original Assignee
State Grid Corp of China SGCC
Yancheng Power Supply Co of State Grid Jiangsu Electric Power Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by State Grid Corp of China SGCC, Yancheng Power Supply Co of State Grid Jiangsu Electric Power Co Ltd filed Critical State Grid Corp of China SGCC
Priority to CN201811366763.2A priority Critical patent/CN109412430A/en
Publication of CN109412430A publication Critical patent/CN109412430A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Abstract

The invention discloses a kind of stack bus bar with exchange exit, including an input busbar, three intermediate busbars, an exchange switching busbar, an alternating current bus bar.Wherein, the input busbar, alternating current bus bar are L-shaped, including a horizontal plane and a vertical plane;It is described input busbar, alternating current bus bar vertical plane be generally aligned in the same plane.The present invention utilizes alternating current bus bar, and the exchange end of mould group is drawn out to and DC terminal same plane, so that the difficulties in installation and maintenance of mould group greatly reduces, the relatively sharp beauty of the connecting wiring of mould group.Meanwhile laminated bus bar structure is simple, the simple to install of internal power semiconductor device.

Description

A kind of stack bus bar with exchange exit
Technical field
The invention belongs to stack bus bar technical fields, and in particular to a kind of stack bus bar with exchange exit.
Background technique
With the development of electrical engineering, the application demand of high voltage and high capacity gradually increases.By power semiconductor The restriction of voltage class and its production cost, it is unreliable and uneconomical by single power semiconductor.It can be used in engineering Multiple power semiconductor module mould group directly in series, topology is simple, and control and protection are simple.
Currently, multiple power semiconductor module mould group directly in series, direct-flow input end (including electrode input end and negative Pole input terminal) and ac input end be located at one in front and one in back two planes.In practical application, wiring is difficult to carry out by same wire casing Cabling, part cabling are usually needed across interior of equipment cabinet where series mould set, and layout is relatively chaotic.Simultaneously as space limits, Worker is often difficult to directly contact rear of cabinet, causes mould group difficult to install;Similarly, when system jam, to mould group The difficulty overhauled and replaced increases.
Summary of the invention
In view of above-mentioned, the present invention provides a kind of stack bus bar with exchange exit, which passes through exchange Busbar is generally aligned in the same plane exchange exit, electrode input end, negative input.Meanwhile stack bus bar parasitic inductance is small, Be conducive to the series connection of power semiconductor, and laminated bus bar structure is compact, simple to install is convenient.
A kind of stack bus bar with exchange exit, is made of six parts, including one has electrode input end, bears The input busbar of pole input terminal, three intermediate busbars with power semiconductor mounting hole, an exchange switching busbar, one Part has the alternating current bus bar of exchange exit;Wherein, the input busbar, alternating current bus bar are L-shaped, including a horizontal plane and one A vertical plane;The electrode input end, negative input are located at the input busbar vertical plane, and the exchange exit is located at institute State alternating current bus bar vertical plane;The input busbar vertical plane and the alternating current bus bar vertical plane are generally aligned in the same plane, the input Bus-bar horizontal face is located at below the alternating current bus bar horizontal plane.
Further, the input busbar and the intermediate busbar include five layer laminates, from top to bottom successively are as follows: lower layer Insulation board, lower layer's conductor plate, intermediate insulation plate, top conductor plate, upper layer insulation board;The exchange switching busbar is exposed copper Row;The alternating current bus bar is the copper bar for wrapping up insulating layer.
Further, the intermediate busbar includes four power semiconductor mounting holes;The exchange switching busbar packet Containing two power semiconductor mounting holes and two switching mounting holes.
Further, the alternating current bus bar horizontal plane includes two switching mounting holes, and the switching is installed pore size and opened Hole is corresponding with switching mounting hole on exchange switching busbar.
Further, the power semiconductor mounting hole packet size and aperture correspond to the size of power semiconductor With installation pin.
Further, the power semiconductor uses IGBT (insulated gate bipolar transistor) module or SiC MOSFET (silicon carbide metal-oxide semiconductor field effect transistor) module.
The present invention utilize alternating current bus bar, by the exchange end of mould group be drawn out to DC terminal same plane so that the peace of mould group Dress and maintenance difficulties greatly reduce, the relatively sharp beauty of the connecting wiring of mould group.Meanwhile laminated bus bar structure is simple, inside The simple to install of power semiconductor.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of a specific embodiment of the invention.
Fig. 2 (a) is the left view that busbar is inputted in Fig. 1;Wherein, electrode input end, negative input and exit is exchanged It is generally aligned in the same plane.
Fig. 2 (b) be input the electrode input end of busbar, negative input and alternating current bus bar in Fig. 1 exchange exit Main view.
Fig. 2 (c) is the cross-sectional view that busbar, intermediate busbar are inputted in Fig. 1.
Fig. 3 is the schematic diagram of alternating current bus bar in Fig. 1.
Fig. 4 (a) is that busbar, intermediate busbar and the structural schematic diagram for exchanging switching busbar are inputted in Fig. 1.
The specific embodiment that Fig. 4 (b) is Fig. 1 is applied to eight concatenated connection schematic diagrams of power semiconductor.
Fig. 4 (c) is that the power semiconductor in Fig. 4 (b) is SiC MOSFET (silicon carbide metal-oxide semiconductor Field effect transistor) module when equivalent schematic diagram.
Fig. 4 (d) is the power semiconductor in Fig. 4 (b) when being IGBT (insulated gate bipolar transistor) module etc. Imitate schematic diagram.
Specific embodiment
In order to more specifically describe the present invention, with reference to the accompanying drawing and specific embodiment is to technical solution of the present invention It is described in detail.
As shown in Figure 1, present embodiment discloses a kind of stack bus bar with exchange exit, including input busbar 1, intermediate busbar 2,3,4, exchange switching busbar 5, alternating current bus bar 6.
As shown in Fig. 2 (a) and Fig. 2 (b), input busbar 1, alternating current bus bar 6 are L-shaped, including horizontal plane and vertical plane.Input 2,3,4 surface of 1 horizontal plane of busbar and intermediate busbar, exchange switching 5 surface of busbar are in same plane;Alternating current bus bar 6 is horizontal Face is located above input bus-bar horizontal face.Input 1 vertical plane of busbar and 6 vertical plane of alternating current bus bar are generally aligned in the same plane.Input is female Arranging 1 vertical plane includes electrode input end 103, negative input 104, for connecting higher level's DC power supply or DC capacitor busbar, 6 vertical plane of alternating current bus bar includes exchange exit 603, for connecting external communication end.Input busbar 1 and intermediate busbar 2,3,4 It is the stack bus bar for including five layer laminates, as shown in Fig. 2 (c), sectional view is formed by five layers, comprising: upper layer insulation board 001, Top conductor plate 002, intermediate insulation plate 003, lower layer's conductor plate 004, lower layer's insulation board 005.As shown in Fig. 2 (c),
As shown in figure 3, mounting hole 601,602 of transferring on alternating current bus bar 6 is used for and is exchanged on switching busbar 5 in Fig. 4 (a) Switching mounting hole 502 is connected by copper post with fastener.
Such as Fig. 4 (a), inputting busbar 1 includes power semiconductor mounting hole 101,102, and intermediate busbar 2,3,4 respectively includes Four power semiconductors mounting hole 201-204,301-304,401-404, exchange switching busbar includes power semiconductor device Part mounting hole 501,504 is used to connect with power semiconductor input electrode.The electrode input end 103 and mounting hole 101 are located at the input busbar top conductor layer, and the negative input 104 and mounting hole 102 are located under the input busbar Layer conductor layer;Similarly, mounting hole 201 and 202 is located at the intermediate 2 top conductor layer of busbar, and mounting hole 203 and 204 is located at 2 lower layer's conductor layer of intermediate busbar;Similarly, mounting hole 301 and 302 is located at the intermediate 3 top conductor layer of busbar, installation Hole 303 and 304 is located at intermediate 3 lower layer's conductor layer of busbar;Similarly, mounting hole 401 and 402 is located at the intermediate busbar 24 Top conductor layer, mounting hole 403 and 404 are located at intermediate 4 lower layer's conductor layer of busbar.
When present embodiment is applied to eight power semiconductor series connection, connection schematic diagram such as Fig. 4 (b) institute Show, mounting hole 101 connects the anode of power semiconductor M1, and the cathode of power semiconductor M1 connects mounting hole 201;Class As, mounting hole 202 connects the anode of power semiconductor M2, and the cathode of power semiconductor M2 connects mounting hole 301; Similarly, mounting hole 302 connects the anode of power semiconductor M3, and the cathode of power semiconductor M3 connects mounting hole 401;Similarly, mounting hole 402 connects the anode of power semiconductor M4, and the cathode of power semiconductor M4 connects installation Hole 501;Similarly, mounting hole 504 connects the anode of power semiconductor M5, and the cathode of power semiconductor M5 connects peace Fill hole 403;Similarly, mounting hole 404 connects the anode of power semiconductor M6, the cathode connection of power semiconductor M6 Mounting hole 303;Similarly, mounting hole 304 connects the anode of power semiconductor M7, and the cathode of power semiconductor M7 connects Connect mounting hole 203;Similarly, mounting hole 204 connects the anode of power semiconductor M8, the cathode of power semiconductor M8 Connect mounting hole 102.
When above-mentioned power semiconductor is SiC MOSFET (silicon carbide metal-oxide semiconductor field effect transistor) When module, the equivalent circuit of Fig. 4 (b) such as Fig. 4 (c).
When above-mentioned power semiconductor is IGBT (insulated gate bipolar transistor) module, the equivalent circuit of Fig. 4 (b) Such as Fig. 4 (d).
The above-mentioned description to embodiment is for that can understand and apply the invention convenient for those skilled in the art. Person skilled in the art obviously easily can make various modifications to above-described embodiment, and described herein general Principle is applied in other embodiments without having to go through creative labor.Therefore, the present invention is not limited to the above embodiments, ability Field technique personnel announcement according to the present invention, the improvement made for the present invention and modification all should be in protection scope of the present invention Within.

Claims (6)

1. a kind of stack bus bar with exchange exit, it is characterised in that: be made of six parts, including one has anode The input busbar of input terminal, negative input, three intermediate busbars with power semiconductor mounting hole, an exchange turn Busbar is connect, one has the alternating current bus bar of exchange exit;Wherein, the input busbar, alternating current bus bar are L-shaped, including one Horizontal plane and a vertical plane;The electrode input end, negative input are located at the input busbar vertical plane, and the exchange is drawn Outlet is located at the alternating current bus bar vertical plane;The input busbar vertical plane and the alternating current bus bar vertical plane are located at same flat Face, the input bus-bar horizontal face are located at below the alternating current bus bar horizontal plane.
2. a kind of stack bus bar with exchange exit according to claim 1, it is characterised in that: the input busbar It include five layer laminates with the intermediate busbar, from top to bottom successively are as follows: lower layer's insulation board, lower layer's conductor plate, intermediate insulation plate, Top conductor plate, upper layer insulation board;The exchange switching busbar is exposed copper bar;The alternating current bus bar is the copper for wrapping up insulating layer Row.
3. a kind of stack bus bar with exchange exit according to claim 1, it is characterised in that: the intermediate busbar Include four power semiconductor mounting holes;The exchange switching busbar includes two power semiconductor mounting holes and two A switching mounting hole.
4. a kind of stack bus bar with exchange exit according to claim 1, it is characterised in that: the alternating current bus bar Horizontal plane includes two switching mounting holes, and the switching installation pore size and aperture exchange switching busbar with described in claim 3 Upper switching mounting hole is corresponding.
5. a kind of stack bus bar with exchange exit described in any one of -4 according to claim 1, it is characterised in that: institute It states power semiconductor mounting hole packet size and aperture corresponds to the size and installation pin of power semiconductor.
6. a kind of stack bus bar with exchange exit according to claim 1, which is characterized in that the power is partly led Body device uses IGBT module or SiC MOSFET module.
CN201811366763.2A 2018-11-16 2018-11-16 A kind of stack bus bar with exchange exit Pending CN109412430A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201811366763.2A CN109412430A (en) 2018-11-16 2018-11-16 A kind of stack bus bar with exchange exit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201811366763.2A CN109412430A (en) 2018-11-16 2018-11-16 A kind of stack bus bar with exchange exit

Publications (1)

Publication Number Publication Date
CN109412430A true CN109412430A (en) 2019-03-01

Family

ID=65473532

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201811366763.2A Pending CN109412430A (en) 2018-11-16 2018-11-16 A kind of stack bus bar with exchange exit

Country Status (1)

Country Link
CN (1) CN109412430A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110165620A (en) * 2019-05-15 2019-08-23 杭州多宝电子有限公司 A kind of busbar

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110165620A (en) * 2019-05-15 2019-08-23 杭州多宝电子有限公司 A kind of busbar

Similar Documents

Publication Publication Date Title
CN203165891U (en) Semiconductor module
CN104167933B (en) The new power converter unit that lamination spraying row is used in mixed way with composite bus bar
CN103986354B (en) Three-level rectifier
CN209329967U (en) A kind of stack bus bar with exchange exit
CN109412430A (en) A kind of stack bus bar with exchange exit
US20080055822A1 (en) Scalable plant with top or bottom entry flexibility
CN100544132C (en) The stacked power bus bar that is used for the magnetic suspending train chopper
CN204031003U (en) A kind of stack bus bar and diode clamp three-level topology device
CN207304393U (en) Rectification and the auxiliary converter power cell and composite bus bar of inversion facilitation
CN205666751U (en) Converter module based on erect female row of dress stromatolite
CN201126927Y (en) Cascade power female arrange for suspending chopper of magnetic suspension train
CN106130316B (en) A kind of current transformer module based on perpendicular dress stack bus bar
CN102647129A (en) Structure of high-voltage insulated direct-current brushless motor controller
CN204118479U (en) DC power distribution cabinet
CN209329946U (en) One kind being used for the concatenated low inductance stack bus bar of four power semiconductors
CN103019351A (en) Power supply unit
CN214312680U (en) Low-impedance laminated busbar for locomotive traction system of domestic chemical engineering
CN204030178U (en) DC-DC modular power source negative electrode bus structure
CN109510438A (en) One kind being used for the concatenated low inductance stack bus bar of four power semiconductors
WO2015176577A1 (en) Miniature photovoltaic combiner box
WO2018192226A1 (en) Laminated output structure of capacitive power source of welding apparatus
CN209881662U (en) Busbar device integrating direct-current busbar and alternating-current busbar
CN207150481U (en) motor driver
CN207868981U (en) It is a kind of to be easily installed and stable high-frequency direct-current power module is installed
CN205407736U (en) Photovoltaic intelligence alternating current -direct current collection flow box

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination