CN109155458A - System and method for reducing the intermodulation of electronically controlled adaptive antenna array - Google Patents

System and method for reducing the intermodulation of electronically controlled adaptive antenna array Download PDF

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Publication number
CN109155458A
CN109155458A CN201780030664.4A CN201780030664A CN109155458A CN 109155458 A CN109155458 A CN 109155458A CN 201780030664 A CN201780030664 A CN 201780030664A CN 109155458 A CN109155458 A CN 109155458A
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phase
clause
transformation
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state
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CN201780030664.4A
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CN109155458B (en
Inventor
埃里克·J·布莱克
布莱恩·马克·多伊奇
亚历山大·雷姆莱·卡特科
梅尔罗·马卡多
杰伊·霍华德·麦坎德利斯
雅罗斯拉夫·A·乌尔朱莫夫
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Elwha LLC
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Elwha LLC
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Priority claimed from US15/077,703 external-priority patent/US10411349B2/en
Priority claimed from US15/077,710 external-priority patent/US10535923B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
    • H01Q5/30—Arrangements for providing operation on different wavebands
    • H01Q5/307—Individual or coupled radiating elements, each element being fed in an unspecified way
    • H01Q5/314—Individual or coupled radiating elements, each element being fed in an unspecified way using frequency dependent circuits or components, e.g. trap circuits or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
    • H01Q15/006—Selective devices having photonic band gap materials or materials of which the material properties are frequency dependent, e.g. perforated substrates, high-impedance surfaces
    • H01Q15/0066—Selective devices having photonic band gap materials or materials of which the material properties are frequency dependent, e.g. perforated substrates, high-impedance surfaces said selective devices being reconfigurable, tunable or controllable, e.g. using switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/30—Combinations of separate antenna units operating in different wavebands and connected to a common feeder system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
    • H01Q3/26—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture
    • H01Q3/2605—Array of radiating elements provided with a feedback control over the element weights, e.g. adaptive arrays

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Variable-Direction Aerials And Aerial Arrays (AREA)
  • Aerials With Secondary Devices (AREA)

Abstract

Present disclose provides the system and method for the intermodulation of the radiating element for mitigating or reducing adaptive antenna array.Adjustable element or material with adjustable, such as phase-change material or state change materials, can be used for increasing the linearity of RF transmission characteristic.These are mutually or state changes material can modify the electromagnetic response of radiating element.In some embodiments, variocoupler further can be added to system to reduce intermodulation.It can have positioned jointly all or some elements using the adaptive antenna array of technique described herein.

Description

System and method for reducing the intermodulation of electronically controlled adaptive antenna array
All themes of priority application are incorporated by reference this on this human subject and herein reconcilable degree Text.
Technical field
This disclosure relates to the system and method for reducing intermodulation.More specifically, this disclosure relates to being used for electronically controlled The intermodulation of adaptive antenna array reduces technology.
Summary of the invention
Antenna system may include having the shared feeding of adaptive unit (unit cell) array.Each unit can be with Including radiating element and with each radiating element (co-located) adjustable element positioned jointly.Bias component can be used for being every A adjustable element provides DC biasing.The DC biasing of each adjustable element be can choose to increase the linearity of the operation of adjustable element To reduce signal intermodulation.By tuning the adjustable element of radiating element, activating part can be used for responding the energy in shared feeding To control activation or the radiation level of radiating element.
Intermodulation can be reduced using one or more solutions.For example, can be modified by variable condenser humorous Vibration frequency.In another embodiment, Q factor (for example, ratio of damping of resonator) can be modulated with variable resistance.Another In one embodiment, resonant intensity can be changed by the switch of the certain parts of activation/deactivated resonant element.Some In embodiment, it can use dedicated variable coupler and control input power in each element.
Detailed description of the invention
It includes adjustable element to reduce the antenna system of signal intermodulation that Fig. 1, which is shown according to an embodiment,.
Fig. 2 shows the antenna systems including flexible screw radiating element according to an embodiment.
Fig. 3 shows the antenna system including variocoupler according to an embodiment.
Fig. 4 shows the flow chart of an embodiment of the method for reducing signal intermodulation.
Fig. 5 shows the flow chart of another embodiment of the method for reducing signal intermodulation.
Specific embodiment
This document describes be related to reducing various embodiments, the systems, devices and methods of passive intermodulation and intermodulation distortion.This The embodiment of text description can enable usually separated at a certain distance element to co-locate.
For example, adaptive antenna array (A3) forms the basis of various beam formings and electronics steerable antenna, the wave Beam shaping and electronics steerable antenna readily penetrate through each region of wireless communication.They also serve as mimo system, plurality of Antenna element is used for control channel gain, for the signal diversifying in multipath scenario and/or for spatial reuse.For controlling A3 Common method be by means of electronic switch, electronic control variable condenser (varactor), variable resistance, phase shifter and Other electronic circuit components change its electromagnetic property according to the voltage level in control port.When equipped with this control member The A3 of part is for wirelessly communicating, that is, when being used for transmission digital code information, needs the high linear of transmitter and receiver antenna Degree.
This is even more important for high power and/or frequency division duplex (FDD) system due to passive intermodulation (PIM).Even if no The nonlinearity component of such as transistor and varactor etc, the reception system of high power transmission system and other frequency ranges Co-located can also generate intermodulation distortion (IMD).In fact, IMD can be produced by pure passive system component, the pure passive system It RF connection and the bolt that even gets rusty that component, which includes loose,.The PIM limits achievable using this adaptive antenna Maximum information throughput.The high-order of such as OFDM etc, spectral efficient digital modulation scheme are tended to the equal power in peak Than (PAPR), and therefore it is easier to be influenced by IMD and PIM.
Due to certain wireless communication transmitters power level that may be present, it is therefore necessary to which height inhibits PIM.For example, quotient Industry system usually requires the PIM level of about -150dBc.This requirement to the high linearity, which usually eliminates to use, such as may be used Become the circuit element of reactor and varactor etc to realize the A3 in this system, because including that these components can induce PIM.If using these components in systems, they generally have to individually placed, occupancy additional space.Using retouching herein The system and method stated, which reduce interference, can eliminate this needs.
The linearity of system can be realized by adjusting the various parameters of resonant element.A3's based on resonant element is suitable It should can pass through modulating resonance frequency (ωr) realize；The Q factor of resonance, or equally, its ratio of damping γ=ωr/2Q； And/or (it corresponds in the case where electric or magnetic dipole resonance device by excitation intensity normalized dipole moment resonant intensity F Square).
In addition, disresonance and resonance radiation element can couple electricity by the power between chopped radiation element and its feed Flat (Tc) adaptability is provided.The parameter means as the presence of individual freedom degree in shared (common) feed and radiation resonance Between element exist (may be very short) transmission line, make Lorentz resonator parameter and be allowed to enter radiation it is humorous There is a degree of isolation between the quantity of power of element of shaking.In addition, for such framework, controlling value TcAdjustable member Part can be co-located with public (shared) feed structure, but spatially be separated with radiation resonator, especially be radiated with it Top (radiation) surface in freedom of entry space separates.
Resonance frequency, Q factor and v resonant intensity correspond to three parameters for defining Lorentz resonance, with following shape The response curve of formula:
Power coupled level describes the excitation intensity being incident on radiating element；In other words, power coupled level is into one Step is with Eexc=TcEinForm indicates Eexc, wherein EinThe field in (usually sharing) feed directly below resonant element. Power coupled level realizes similar result in terms of control radiates amplitude with resonant intensity.Therefore, in some embodiments In, one in these parameters can be only modified for efficiency.
The parameter for describing the linearity of particular device is useful for the applicability of quickly more multiple candidate devices.Often One such parameter is the third order intermodulation section (IP3) of equipment.Non-linear equipment will be by generating frequency harmonics and mixing Product is closed to induce spectral re-growth.IP3 is the extrapolation of (input) power level, and wherein (frequency is baseband signal power level ω0) being equal to triple-frequency harmonics, (frequency is 3 ω0).This parameter can estimate the linear degree of particular device.
Described herein is the various embodiments for describing various PIM and IMD mitigation techniques related with above-mentioned parameter.
In one embodiment, electronically controlled adaptive antenna array system can have shared feed.The system is also It may include adaptive unit array.Each of these units may include radiating element and determine jointly with each radiating element The adjustable element of position.In addition, bias component or application bias component can provide DC biasing for each adjustable element.It can be every A adjustable element selection DC biasing is to increase the linearity of the operation of adjustable element, to reduce signal intermodulation.Finally, active portion Part can be configured as the adjustable element by tuning radiating element to control radiation element in response to sharing the energy in feed The activation of part or radiation level.
In some embodiments, microwave frequency electricity can be configured for by sharing feed (for example, transmission line or waveguide) Magnetic wave, radio frequency electromagnetic, electromagnetic infrared wave or optical frequency electromagnetic wave.In some embodiments, conductor can be used for conduction time phase The current signal of pass.In other embodiments, shared feed may include the conductor for lead schedule surface wave.In any embodiment party In formula, adaptive unit array can cover shared feed.Shared feed can be additionally or alternatively gradually hair ground or reaction It is coupled to the radiator of adaptive cell array and/or is radially coupled to the radiator of adaptive unit array to property.
Activating part can be configured to be controlled using various methods and radiate.Pass through for example, activating part can be configured as Apply modified voltage on DC biasing to control radiation.In another embodiment, activating part can be by not The electric terminal for being same as applying the terminal of DC biasing provides signal to control radiation.In other embodiments, activating part is matched The phase that is mechanically actuated and/or adjusting adjustable element by induction adjustable element is set to control radiation.
The radiating element of system may include resonant element.Adjustable element corresponding to radiating element is configured as modification resonance Response of the element to shared feed.This can control the activation of corresponding radiating element or radiation level.
Adjustable element can be configured to adjust the resonance frequency of corresponding radiating element.Activating part can be configured as selection Property the adjustable element of corresponding radiating element is tuned to match the frequency in shared feed with the radiation of activating radiation element.
In other embodiments, adjustable element is configured as selectively modifying radiating element inductively or capacitively.Example Such as, adjustable element can be the variable condenser based on semiconductor junction.Variable condenser may include diode, or more specific Ground, varactor.In another example, variable condenser can be transistor.It is based on more specifically, adjustable element can be The variable condenser of ferroelectric material.In some embodiments, ferroelectric material includes barium strontium titanate (BST).In another example In, adjustable element can be the variable condenser based on liquid crystal media.
In some embodiments, each adjustable element can be configured as the quality for adjusting the resonance of corresponding radiating element Factor.For example, adjustable element can be variable resistance.Variable resistance can be the resistance based at least one semiconductor junction Device.In addition, in some embodiments, variable resistance can be diode.Diode can be in p-type semiconductor region and n There is intrinsic semiconductor region (PIN diode) between type semiconductor regions.In another embodiment, variable resistance can be with It is transistor.For example, transistor can be field effect transistor (FET).Transistor can be configured with common source and be operated, wherein Gate terminal, which is used as, throws terminal and drain terminal, and source terminal is used as switch terminal.Alternatively, variable resistance can be grid High isolation between terminal and ac signal.
In some embodiments, radiating element can be configured to reduce intermodulation.For example, radiating element may also include radio frequency One or more of choke coil and insulation control line.For in another example, radiating element is to shunt reflection.The shunting It can allow the another point of electric current in oversampling circuit by generating the low resistance path of such as switch etc.This makes each spoke Electric current or non-conducting electric current can be conducted by penetrating element, then generate the radiating element of two states.The linearity can determine radiation element Whether part receives electric current.For example, circuit can be with shunt current when switched linear is smaller.Switch-off (off) state is available In the radiation for activating or controlling radiating element.In another example, the radiation which can have radiating element is connected (on) state corresponds to the off state of adjustable element corresponding with radiating element.
In some embodiments, adjustable element can be configured to adjust the resonant intensity of radiating element.For example, adjustable member The resonant intensity of the adjustable electric dipole of part or magnetic dipole resonance.In another embodiment, DC biasing can deactivate Or a part of the resonant element of the corresponding radiating element of activation.For example, radiating element can have a plurality of conducting wire of series connection, And based on DC biasing activation or one or more conducting wire can be deactivated.This will effectively change the length of radiating element.Finally, Adjustable element can be configured as the quality factor, corresponding radiating element that adjust the resonance of corresponding radiating element resonance frequency and Two or more in the resonant intensity of radiating element.
In some embodiments, system may include the shared feed for being connected to adaptive unit array.Each unit May include radiating element and with radiating element regulating element positioned jointly.Regulating element may include one or more adjustable materials Material, such as phase-change material and/or state change materials.Transformation control unit, which can be configured as, selectively induces material with adjustable Electromagnetism (for example, electric or magnetic) characteristic variation, to control activation and/or the radiation level of radiating element.
Material with adjustable initially can be at first stage or first state, the electromagnetic field not provided shared feed substantially Response.Second phase or state may also substantially be not responding to the electromagnetic field from shared feed.However, it is possible to by state of activation, Transmittance or radiation level are revised as the second state from first state.
Mutually and/or state change materials may include the material changed between discrete topology variation and material phase transformation, lead Cause the one or more electricity of material with adjustable and/or the Discrete Change of magnetic characteristic.Material with adjustable may include phase and/or state change Material, wherein transformation control unit is configured as selectively inducing the phase transformation in phase and/or state change materials.
Mutually and/or state change materials can be configured to change between the first material phase and the second material phase.Mutually and/or State change materials can be the material that electromagnetic property depends on the present material phase of phase and/or state change materials.Mutually and/or The electromagnetic property of state change materials can have the first dielectric constant in the first phase, have the second dielectric normal in the second phase Number.First dielectric constant can have the real part or imaginary part different from the second dielectric constant.
First phase can be liquid phase, and the second phase can be gas phase.First phase can be crystalline solid, and the second phase can be nothing White amorphous solid.First phase can be liquid phase, and the second phase can be gas phase.First phase can be crystalline solid, and the second phase can be Amorphous solid.Mutually and/or state change materials may be capable of forming multiple metastable state allotropes.First phase can be One crystalline solid, the second phase can be the second crystalline solid.Mutually and/or state change materials can turn between a variety of metastable phases Become.A variety of metastable phases can exist in common temperature range and common pressure limit.
Mutually and/or state change materials can be can anti-phase and/or state change materials so that from the first metastable phase turn It changes to after the second metastable phase, phase transformation transformation is reversible to go back to the first metastable phase.Phase and/or state change materials can be chalcogenide Object material, for example, GeTe, GeSbTe, AgInSbTe, InSe, SbSe, SbTe, InSbSe, InSbTe, GeSbSe, GeSbTeSe, With one of AgInSbSeTe or a variety of.
First metastable phase can be amorphous solid phase, and the second metastable phase can be crystalline solid phase.Phase and/or state change materials It can be electrical isolation under the first metastable phase.Mutually and/or state change materials can be non-conductor under the second metastable phase, such as Semiconductor, semimetal or low conductive metal.Second material may mutually need different temperatures, different pressures, not same electric field or difference One of magnetic field is a variety of, and phase and/or state change materials are maintained in its second phase.
First material phase and the second material can mutually have different electronics integrated structures.Mutually and/or in state change materials Phase transformation can be related to mutually and/or atom or ion between state change materials and second medium migration.Mutually and/or state becomes Change the superconductor that material may be one of two possible phases, so that phase transformation is in superconducting phase and non-superconducting (normal) phase Between.For example, phase and/or state change materials can be vanadium dioxide (VO2).
Transformation between first material phase and the second material phase can be the transformation between two kinds of allotrope modifications.Phase And/or the reversible transition in state change materials may include phase and/or state change materials and second medium in either direction Ion transfer.For example, ion may include oxonium ion or oxygen-containing molecules ion.Transformation control unit can be configured as to phase And/or state change materials offer be heated or cooled, for from the first material mutually to the temperature-induced transformation of the second material phase.
Transformation control unit be configured as selectively activating with unit heating or cooling element positioned jointly, with induction Or maintain transformation.Temperature-induced transformation can be two or more in solid phase, liquid phase, gas phase and plasma phase between First order transition.Temperature-induced transformation can be the second order trnasition between two solid allotropes.Temperature-induced turns Become the transformation that can be between ferromagnetic phase and non-ferromagnetic phase.
Temperature-induced transformation can be the transformation between superconducting phase and nonsuperconducting phase.Temperature-induced transformation can be suitable The electric mutually transformation between ferroelectric phase.Temperature-induced transformation can be chemical reaction, energy barrier quilt gram more than a certain temperature Clothes.Mutually and/or state change materials can be thermoelectric material, wherein temperature-induced transformation includes the heat of the function as temperature The electropolarized change of electric material.
Transformation control unit can increase or reduce the pressure on phase and/or state change materials, to induce from the first material Material is mutually to the transformation of the second material phase.Transformation control unit optionally activates and unit MEMS positioned jointly (MEMS), mutually and/or on state change materials to induce or maintain increased or reduced pressure to maintain to change.
Transformation control unit can increase or reduce be incident on mutually and/or state change materials on electric field, with induction and/ Or it maintains from the first material mutually to the transformation of the second material phase.Mutually and/or state change materials include ferroelectric material, and are changed It can the state in not residual polarization and between the state with residual polarization.For example, ferroelectric material can be BaTiO3, One of PbTiO3 and PZT or a variety of.Mutually and/or state change materials include antiferroelectric materials and/or multi-ferroic material.Phase And/or state change materials can be ferromagnetic material, ferrimagnetic material, antiferromagnet and/or multi-ferroic material.Transformation control It activates to the component property of can choose and unit electromagnet positioned jointly.As previously mentioned, material can be state change materials and It is not phase and/or state change materials.
State change materials can be the stimulation in response to application and continuously change the material of electromagnetic property.For example, state Change material, wherein transformation control unit be configured as selectively inducing the continuous of the electromagnetic property of state change materials or by Gradual change.State change materials can be configured as in response to one or more changes in temperature, pressure, electric and magnetic fields Change, in the first state with first group of electricity and/or magnetic characteristic and between second group of electricity and/or the second state of magnetic characteristic Conversion.
State change materials may include para-electric, such as one of SrTiO3 and BaSrTi or a variety of or ferroelectricity material Material, such as one of BaTiO3, PbTiO3 and PZT or a variety of.Mutually and/or state change materials or state change materials can be with Be mutually and/or state change materials, wherein at least one be mutually state change materials.For example, adjustable dielectric material its phase can be with Become para-electric from ferroelectricity, phase can be become non-polarized from polarization by the electric field of application by ferroelectricity, and para-electric have depend on The dielectric constant of electric field.
Radiating element can be resonant element.Regulating element can be radiating element, be configured to modification resonant element pair The response of shared feed, to control activation or the radiation level of corresponding radiating element.Each adjustable corresponding spoke of regulating element Penetrate the quality factor of the resonance of element.In various embodiments, sharing feed includes being used for conduction time correlated current signal Conductor.Shared feed includes the surface bounded structure for lead schedule surface wave.In addition, in some embodiments, adaptively Cell array can cover shared feed.
It includes adjustable element 108 to reduce the antenna system of signal intermodulation that Fig. 1, which is shown according to one embodiment, 100.Antenna system 100 may include the adaptive array of shared feed 102, bias component 104, activating part 112 and unit 106 Column.
Each unit 106 may also include and each radiating element 110 one or more adjustable elements 108 positioned jointly.
In some embodiments, adjustable element 108 can be configured as the capacitor and/or inductance of modification resonant element. It, can be with the resonance frequency of chopped radiation element 110 to reduce signal intermodulation by modification capacitor and/or inductance.For example, due to can Element 108 is adjusted, the resonance of each unit 106 can change, this can permit certain unit shutdowns or connects to increase as whole The linearity of the system of body.
For example, adjustable element 108 can be variable condenser.In some embodiments, variable condenser may include by Semiconductor junction made of diode and transistor.However, semiconductor junction is substantially nonlinear.In order to reduce nonlinearity, D/C voltage from bias component 104 can be used for capacitor being biased in particular state.For example, each unit 106 can be adjusted It is humorous to reduce non-linear and signal intermodulation frequency to by changing the voltage on entire semiconductor junction.
Although variable condenser allow change unit 106 frequency, they by be IMD main source, so if Using then they be PIM in A3.Therefore, reduce variable condenser generate PIM and IMD by reduce A3 whole PIM and IMD。
A kind of technology for reducing IMD and PIM is the suitable DC bias point of selection.For example, the varactor based on p-n junction With capacitance-voltage (CV) relationship, form are as follows:
Wherein Cj0It is zero offset junction capacity, φ is the contact potential depending on semiconductor, and γ is to depend on junction structure (abrupt junction Or super abrupt junction etc.) parameter, and VRIt is reverse biased.
The CV characteristic of this device is determined that the reverse bias voltage includes D/C voltage V_DC and application by reverse bias voltage RF voltage V_RF.In the limitation of small signal, V_RFn < < V_DC, therefore DC bias voltage controls CV characteristic.In certain bias Point VDCNear, Taylor series can be used and carry out approximate CV characteristic.For example, C (V-VDC)=C0+C1(V-VDC)+C2(V-VDC)2+C3 (V-VDC)3+….As shown, coefficient C0、C1、C2、C3... depend on VDC.Therefore, by selecting DC bias range appropriate, PIM and IMD can be reduced by variable condenser device.
DC can be selected to bias based on the expectation of adjustability and the linearity.For example, in some embodiments, offset part Part 104 can provide low D/C voltage.Such embodiment will provide high adjustability, but also will be nonlinearity.Therefore, In the embodiment of the more desirable linearity, DC can be biased and be set as higher voltage.As bias voltage increases, come from The voltage of activating part 112 can also increase.Biasing can be adjusted according to the requirement of specific application.
In some embodiments, variable condenser can be made of ferroelectric material, such as be made by barium strontium titanate (BST) At.Device based on BST is usually more more linear than many devices based on semiconductor junction.Typical BST variable capacitance may have There is the IP3 of about+60dBm=1kW.The value is apparently higher than the ideal format of semiconductor junction variable condenser.It therefore, can using BST Variodenser can reduce the PIM of A3 generation.
In another embodiment, the variable condenser based on liquid crystal (LC) material can be used.Based on LC can power transformation The tunability of container changes the orientation of LC molecule based on application electric field.Because LC molecule must be responsive to field to redirect, Therefore their inertia characteristics determine that they can be in response to the speed of the field applied.If the AC electric field of frequencies omega applied To the variable condenser based on LC, then the tunability of LC molecule is the function of ω.At high frequencies, LC molecule cannot be at one It is redirected in 2 π of period/ω.Therefore, the variable condenser based on LC cannot be in response to the field applied more than specific frequency And it tunes.
Once again, Taylor series, which can be used, carrys out approximate CV characteristic, for example, C (V-VDC)=C0+C1(V-VDC)+C2(V- VDC)2+C3(V-VDC)3+….As shown, coefficient C0、C1、C2、C3... depend on VDC.Here, coefficient is C_1, C_2, C_ 3 ... < < C_0.In addition, C_0 is only dependent upon DC bias point.C_0 control CV characteristic in the case where, based on LC can power transformation Container has low-down nonlinearity, therefore suitable for reducing PIM and IMD A3.Variable condenser based on LC has Limited switching time.Therefore, it is likely to be suited for the embodiment required with slower switching time.
Similarly, any Meta Materials can be used, any Meta Materials are at microwave frequencies with some outside stimulus Variation and change its effective dielectric constant.For example, stimulation may include mechanical oscillation, sound wave, light, magnetic field, lower frequency Electric field, RF or DC biasing.These can permit the reorientation of molecule, nanoparticle, nanocluster, particulate etc..This will Certain embodiments are allowed to reduce PIM.
It can also be using switch fixed capacitor array.These variable condensers have they can use it is discrete at The possible capacitance (usually 2 powers) of group, and the variable condenser based on BST or semiconductor junction can be by DC bias voltage It is applied to and the terminal same terminal with desired variable capacitance.Switched capacitor array usually has more than simple DC biasing Complicated control system.Control signal makes together with general and/or proprietary format (such as serial peripheral interface (SPI) bus) With with control switch, to control total capacitance.This control method provides the conveniences that selection is carried out from the state of discrete number Mode, and being capable of easily control switch array.It has the additional benefits that will be controlled with the AC voltage decoupling applied.Ginseng Taylor series approximation is examined, coefficient C_n dependent on applied voltage and is strongly dependent on switch matrix state weakly.This leads Significantly reduced nonlinearity is caused, so as to improve PIM and IMD.Fixed capacitor array based on semiconductor can provide about+ The IP3 of 65dBm=3kW has significant compared with the variable condenser for the DC control biasing being applied directly in varactor Improve.
In addition, this can be improved by using the appropriate fixed capacitor of the linearity with enhancing.MEMS (MEMS) capacitor assigns the very high linearity, because their operation is based on geometry of machinery shape and separation.Use MEMS The switch arrays of capacitor can produce very linear device: especially they can cause IMD (attention be not IP3) <- 130dBc and possibility < -150dBc.
For example, bias component 104 or controller can be with shared 102 uncouplings of feed.This will increase by two terminal parts The linearity of (such as diode or BST capacitor), because bias component 104 does not apply in position identical with the position of RF voltage D/C voltage.Switch fixed capacitor array can also be made of obviously more linear material.It is, for example, possible to use any types Traditional capacitor.Therefore, such embodiment can provide linear electron switching mode.
In another embodiment, the variable condenser based on MEMS can be used as adjustable element.Based on MEMS can power transformation Container is realized by mechanically deform and is tuned.This deformation can realize by various mechanism, including but not limited to by electrostatic, quiet Magnetic and piezoelectricity are realized.Due to many reasons, MEMS variable capacitor has the linearity improved compared with semiconductor junction.Firstly, The actuating method for being not based on AC electric field (such as piezoelectricity) provides the method that will control signal and the decoupling of RF voltage.Signal will be controlled The linearity can be improved with the decoupling of RF signal.Secondly, MEMS variable capacitor depends on mechanically deform.This mechanical system will have Have sizable inertia (quality), and the inertia can be easily adjusted by the appropriate size of selection deformable element Amount.MEMS variable capacitor also will not respond to any high-frequency and redirect.Therefore, it will be led using MEMS variable capacitor Cause the high linearity.
Alternatively, adjustable element 108 can be configured to the ratio of damping of chopped radiation element 110.It is, for example, possible to use be based on The variable resistance of semiconductor junction or phase-change material (PCM).
In the embodiment using the variable resistance based on semiconductor junction, knot may include diode and transistor. For example, various types of field effect transistors (FET) and PIN diode can be used for high frequency Q-switch.Since excellent frequency is special Property, therefore such as metal-oxide semiconductor (MOS) FET (MOSFET) and pseudo-morphic high electron mobility transistor also can be used (pHEMT) etc transistor, but they are generally not provided good PIM performance.
This FET is usually with common source configuration work, and wherein grid drains and source electrode conduct as the throwing switched Switch terminal operation.To the induction AC voltage-sensitive on grid, this can lead to the mixing at the drain electrode of FET for the configuration.If grid Pole is not adequately isolated with AC signal, then this will lead to PIM and IMD.
In order to improve PIM and IMD performance, the switch A3 high based on FET between grid and any AC signal can be used Isolation.In some embodiments, this can pass through addition RF choke coil and ensure any DC control line not by induction AC voltage Influence realize.In order to further increase the linearity, the appropriate bias condition of FET can choose.The IP3 of FET depends on opening Close the voltage, control voltage V_GS and the electric current drawn from drain electrode I_DS at the both ends terminal V_DS.For given FET, selection is special The linearity that IP3 is measured can be improved 6dB or more by fixed bias condition.
In another embodiment, PIN diode can be used for high frequency Q-switch.When they be two-terminal device and because When this DC control biasing is applied to switch terminal, compared with varactor, the physical property of the operation of PIN diode causes The linearity increases.Typical PIN diode may have about the IP3 of+40dBm=10W.Therefore, PIN diode is than many FET More suitable for better PIM and IMD performance.
When radiating element 110 is to shunt reflection, by using FET and PIN diode, these embodiments can be improved In the linearity.For example, bifurcation radiating element (turning on and off) can be used for adjustable element 108 so that switch with it is radial State is identical or complementary.That is, radiating element 110 can be designed as in connection shape when switching in an ON state State or off state.
Specific switching device can provide the improved linearity under the state that turns on and off.For example, can choose More linear switch under off state.In such an example, radiating element is designed to make radiation on-state corresponding In switch OFF state, wherein switch is located so that it provides reflection and shunts.In this case, it when element radiates, opens It closes with the work of higher linearity mode.It radiates off state and corresponds to switch connection state.Under switch connection state, switch Straight-through shunt is provided.Therefore, the more nonlinear mode of switch causes IMD to radiate not at element, because it is split.
In another embodiment, the variable resistance based on phase-change material (PCM) can be used for adjustable element 108.Institute The PCM used can be a variety of materials, and characteristic depends on their phase (on material or substance meaning).These include being familiar with Phase, such as liquids and gases and finer difference, such as crystallization and amorphous solid, or even finer difference, Such as crystalline polymorphs (ability with multiple metastable state allotropes).PCM can be enabled between the two states Switch complex dielectric permittivity.The dielectric constant switched between them can by the real part of dielectric constant, imaginary part or both (amount with Conductivity is proportional) and it is different from each other.
In some embodiments, PCM can be converted between metastable state, two states can in identical temperature and Exist under pressure.It is, for example, possible to use chalcogenide materials, are usually glass (amorphous solid).This kind of material includes GeTe, GeSbTe, AgInSbTe, InSe, SbSe, SbTe, InSbSe, InSbTe, GeSbSe, GeSbTeSe and AgInSbSeTe Deng.In these embodiments, conversion usually occurs between amorphous (glassy state) and crystalline state, and wherein amorphous state is substantially exhausted Edge body, and crystalline state is semiconductor or non-conductor.Both states in terms of conductivity have very big contrast, and There is available contrast in the real part of dielectric constant.The adjustable element of these embodiments can be switched between these states 108 to increase the linearity.These PCM do not need any energy input under any state and they are stored in these Any one of state.But for some applications, conversion time may be not fast enough.
In another embodiment, PCM is converted between states, two of them state need different temperature, pressure, Electric field, magnetic field and/or another physical stimulation.It is, for example, possible to use vanadium dioxide (VO2).In VO2, conversion is in rutile Two kinds of allotropes modification between carry out.At room temperature, VO2 is the crystalline distortion rutile of monocline, the electricity with semiconductor Energy subband structure；At 70 degrees Celsius or more, it becomes metal, and conductivity is caused to increased dramatically.In another example, it can be used Superconductor.Superconductor undergoes increased dramatically for conductivity below its critical-temperature, and the conversion is also by external magnetic field and pressure Influence.Therefore, the adjustable element 108 made of PCM material can be realized by way of in addition to the electromagnetic field significantly may be used Tuning performance.
Fig. 2 shows the antenna systems 200 including flexible screw radiating element 210 according to one embodiment.Antenna System 200 may include the adaptive of shared feed 202, bias component 204, adjustable element 208, activating part 212 and unit 206 Answer array.Preferably and in other embodiments, bias component 204 and activating part 212 can individually or in groups Ground (with continuous or discrete neighbours) controls each adjustable element 208 and/or unit 206.
In one embodiment, radiating element 210 includes a part of flexible screw as radiator, as shown in the figure. The outer radius of spiral can be mechanically adjusted by rotating inner part or external anchor point.As a result, magnetic dipole (MD) resonance is strong Degree (it is related to the self-inductance of spiral) changes to the degree and electric dipole (ED) resonance that the area of screw element is modulated The gap that intensity (related to self-capacitance) changes between continuous circle is squeezed effect.Therefore, electric dipole (ED) Or the resonant intensity (F) of magnetic dipole (MD) type resonance can be changed by the machinery change of spiral.
Radiating element 210 can be different shape.For example, liquid metal alloy can be used in another embodiment, It has the reservoir filled in a different configuration, therefore it can be configured to any shape.It can be spiral shape, dipole Shape, even patch.By changing geometry, thus it is possible to vary resonator intensity and resonance frequency.
Radiating element 210 (for example, square or round screw thread) may include arm, the arm include be connected in series and with switch The a plurality of conducting wire to interweave.Switch can be bielectron switch, mechanical switch or other suitable switches.In addition, they can be It is based on semiconductor, based on MEMS or be only mechanical.
It can control switch conduction (short circuit) or insulation (open circuit).According to the position of the first open switch, effective length of arm Degree can change, because its partial electric disconnects.Therefore, the inductance of the resonator including the arm and MD intensity can it is several not It is adjusted in continuous step.The quantity and amplitude of these steps depend on the quantity and length of these sections.
Fig. 3 shows the antenna system 300 including variocoupler according to an embodiment.Antenna system 300 can be with Adaptive array including sharing feed 302, bias component 304, adjustable element 308, activating part 312 and unit 306.It is variable Coupler 314 can be configured as control input power, and can be and be used in combination with method previously discussed.In some realities It applies in mode, variocoupler can be based on switch.
Fig. 4 shows the flow chart of an embodiment of the method for reducing signal intermodulation.Shown method can pass through Software and processor or microprocessor are realized with computer.This method can be implemented as temporarily or non-transitory is computer-readable Store instruction on medium, when executed by one or more processors, so that processor is realized and method described herein Corresponding operation.This method can additionally, partly or alternatively use specific integrated circuit, field-programmable gate array Column, other hardware circuits, integrated circuit, software, firmware and/or combination thereof are realized.
As shown, the biasing 410 of the adjustable element of the adaptive array for radiating element can be determined.Each radiation Element may include and each radiating element adjustable element positioned jointly.In addition, the adaptive array of radiating element can cover Cover shared feed.Biasing 420 can be provided for each adjustable element.Select the biasing of each adjustable element to increase adjustable element Operation the linearity, to reduce the intermodulation between radiating element.It can control activation or the radiation level of radiating element 430.This can respond the energy in shared feed by tuning the adjustable element of radiating element to complete.
Fig. 5 shows the flow chart of another method for reducing signal intermodulation.Equally, shown method can be by soft Part and processor or microprocessor are realized with computer.This method can be implemented as temporary or non-transitory computer readable medium Store instruction in matter, when executed by one or more processors, so that processor is realized and method described herein phase Corresponding operation.This method can additionally, partly or alternatively use specific integrated circuit, field programmable gate array, Other hardware circuits, integrated circuit, software, firmware and/or combination thereof are realized.
Electromagnetic signal 510 can be generated in shared feed." generation " is broadly understood to include some embodiments, In these embodiments, sharing feed, either internally or externally source receives electromagnetic signal.It is the reception of electromagnetic radiation from source, anti- The compositions such as penetrate, reflect, scattering as herein in regard to " generation " used in shared feed.Electromagnetic signal can be fed from shared feed To adaptive unit array 520.Each unit may include radiating element and with radiating element regulating element positioned jointly.
Regulating element may include material with adjustable, such as phase and/or state change materials or state change materials.Transformation control Component optionally induces the variation of the electrical characteristics or magnetic characteristic of material with adjustable, to control the activation or radiation journey of radiating element Degree 530.Before the electrical characteristics or magnetic characteristic for changing material with adjustable, material with adjustable may include the electromagnetism provided shared feed Field substantially the first phase or first state without response.It is adjustable after the electrical characteristics or magnetic characteristic of material with adjustable change Material can respond electromagnetic field in different modes in a manner of in the first state.
In various embodiments, system can be thought of conceptually as multiple layers and/or be physically implemented as multiple Layer.First layer may include shared feed.The second layer may include radiating element arraying.Each radiating element can in the second layer One or more adjacent radiating elements reactively couple." adjacent " widely includes the radiation close to given radiating element Element and may not be with other adjacent radiating elements of given radiating element.
Third layer may include the near-field coupling element array for the radiating element being coupled in the second layer.Each coupling element It can be configured as the field coupled level selectively controlled between one or more radiating elements and shared feed.Multiple couplings Control unit may be adapted to control the field coupled level between one or more radiating elements.Coupling control unit can be substantially Be not responding to by share feed provide, by radiating element radiation and/or by radiating element in one or more operational frequency bands Received electromagnetic field.
In some embodiments, term " near field " may include or be limited to reactive near.If not deep sub-wavelength, Then all three layers can separate the distance of sub-wavelength, and therefore can be in mutual reactive near.According to shown Some modifications of embodiment can visualize these layers in conjunction with any one of Fig. 1-3.
Each aspect of the present invention illustrates in the clause of following number:
1. a kind of system comprising:
Shared feed；
Adaptive unit array, wherein each unit include radiating element and with radiating element regulating element positioned jointly, Middle regulating element includes material with adjustable；With
Change control unit, is configured as selectively inducing the variation of the electromagnetic property of material with adjustable, to control radiation element At least one of the activation of part or radiation level.
2. according to system described in clause 1, wherein the material with adjustable is substantially not responding to by the shared feed in its state In at least one state in the electromagnetic field that provides.
3. according to system described in clause 1, wherein the material with adjustable changes in the induction of the electromagnetic property of the material with adjustable Before to the electromagnetic field provided by the shared feed substantially without response.
4. according to system described in clause 1, wherein the material with adjustable changes in the induction of the electromagnetic property of the material with adjustable The electromagnetic field provided by the shared feed is substantially provided later.
5. according to system described in clause 1, wherein the material with adjustable changes in the induction of the electromagnetic property of the material with adjustable Before and after the electromagnetic field provided by the shared feed is substantially provided.
6. according to system described in clause 1, wherein the material with adjustable include in phase-change material and state change materials at least It is a kind of.
7. according to system described in clause 1, wherein the material with adjustable includes phase-change material.
8. according to system described in clause 1, wherein the material with adjustable includes state change materials.
9. being changed according to system described in clause 7 wherein the phase-change material is included between discrete topology form or material phase The electromagnetic property for leading to the material with adjustable Discrete Change material.
10. according to system described in clause 1, wherein the material with adjustable includes phase-change material, and the wherein transformation control Component is configured as selectively inducing the phase transformation in the phase-change material.
11. according to system described in clause 10, wherein the phase-change material is configured in the first material phase and the second material phase Between change.
12. according to system described in clause 11, wherein the phase-change material includes that its electromagnetic property depends on the phase-change material Present material phase material.
13. according to system described in clause 12, wherein the electromagnetic property includes the complex dielectric permittivity of the phase-change material, In, when the present material mutually includes the first material phase, the phase-change material includes being different from mutually wrapping in present material First dielectric constant of the second dielectric constant when including the second material phase.
14. according to system described in clause 13, wherein first complex dielectric permittivity includes different from second dielectric constant Real part or imaginary part.
15., wherein first material mutually includes liquid phase, second material mutually includes gas according to system described in clause 14 Phase.
16., wherein first material mutually includes crystalline solid phase, second material mutually includes according to system described in clause 14 Amorphous solid phase.
17. according to system described in clause 14, wherein the phase-change material is capable of forming a variety of stable state allotropic forms.
18. according to system described in clause 14, wherein the phase-change material is capable of forming a variety of metastable state allotropic forms.
19. according to system described in clause 14, wherein first material mutually includes the first crystalline solid phase, and wherein described Two materials mutually include the second crystalline solid phase.
20. according to system described in clause 10, wherein the phase-change material is configured to change between a variety of metastable phases, wherein institute Stating a variety of metastable phases can have in common temperature range and common pressure limit.
21. according to system described in clause 20, wherein the phase-change material includes reversible phase transition material, wherein metastable from first After phase transition to the second metastable phase, the phase transformation transformation is reversible to rotate back into first metastable phase.
22. according to system described in clause 21, wherein the phase-change material includes chalcogenide materials.
23. according to system described in clause 22, wherein the chalcogenide materials include GeTe, GeSbTe, AgInSbTe, One of InSe, SbSe, SbTe, InSbSe, InSbTe, GeSbSe, GeSbTeSe and AgInSbSeTe or a variety of.
24. according to system described in clause 21, wherein first metastable phase includes amorphous solid phase, and wherein second Asia Steady mutually includes crystalline solid phase.
25. according to system described in clause 24, wherein the phase-change material is usually electrical isolation under first metastable phase.
26. according to system described in clause 25, wherein the phase-change material is non-conductor under second metastable phase, such as Semiconductor, semimetal or low conductive metal.
27. according to system described in clause 10, wherein the phase-change material is configured as in the first material phase and the second material phase Between change, wherein second material mutually needs different temperatures, different pressures, not one of same electric field or different magnetic field Or it is a variety of, phase-change material is maintained at its second phase.
28. according to system described in clause 10, wherein the phase-change material is configured in the first material phase and the second material phase Between change, wherein the first material phase mutually has different electron band structures with second material.
29. wherein the phase transformation in phase-change material is related between phase-change material and second medium according to system described in clause 10 Atom or ion migration.
30. according to system described in clause 29, wherein by electric field, magnetic field, barometric gradient, strain gradient or temperature gradient One promotes the migration of atom or ion.
31. according to system described in clause 10, wherein the phase-change material includes reversible phase transition material, wherein from the first material After phase transition to the second material phase, the phase-change material is reversible to rotate back into the first material phase.
32. wherein the phase-change material includes superconductor, and the phase transformation is in superconduction according to system described in clause 31 The mutually phase transformation between nonsuperconducting phase.
33. according to system described in clause 27, wherein the phase-change material includes vanadium dioxide (VO2)。
34. according to system described in clause 31, wherein the transformation between the first material phase and the second material phase includes Transformation between two kinds of allotropic forms.
35. according to system described in clause 31, wherein the reversible transition in the phase-change material be included in the phase-change material and The migration of ion between second medium.
36. the migration of intermediate ion is promoted by electric field according to system described in clause 35, and the direction by inverting electric field is Reversible.
37. according to system described in clause 35, wherein the ion includes oxonium ion or oxygen-containing molecules ion.
38. being added according to system described in clause 10 wherein the transformation control unit is configured as providing to the phase-change material Heat is cooling, with for from the first material mutually to the temperature-induced transformation of the second material phase.
39. according to system described in clause 38, wherein the transformation control unit be configured as continuing to provide be heated or cooled with The phase-change material is maintained at the second material phase.
40. according to system described in clause 38, wherein the transformation control unit is configured to selectively activate and the list Member heating or cooling element positioned jointly, to induce or maintain the transformation.
41. according to system described in clause 38, wherein the temperature-induced transformation includes solid phase, liquid phase, gas phase and plasma First order transition between two or more in body phase.
42. according to system described in clause 38, wherein the temperature-induced transformation include two kinds of solid allotropic forms it Between second order trnasition.
43. according to system described in clause 38, wherein temperature-induced transformation includes the transformation between ferromagnetic phase and non-ferromagnetic phase.
44. according to system described in clause 38, wherein temperature-induced transformation includes the transformation between superconducting phase and nonsuperconducting phase.
45. according to system described in clause 38, wherein the temperature-induced transformation includes turning between paraelectric phase and ferroelectric phase Become.
46. according to system described in clause 38, wherein the temperature-induced transformation includes chemical reaction, the chemical reaction Energy barrier is overcome more than threshold temperature.
47. according to system described in clause 38, wherein phase-change material includes thermoelectric material, and wherein temperature-induced transformation packet Include the electropolarized change of the thermoelectric material as temperature funtion.
48. according to system described in clause 10, wherein the transformation control unit is configured to increase or reduce the phase transformation material Pressure on material, to induce from first material mutually to the transformation of the second material phase.
49. according to system described in clause 48, wherein transformation control unit is configured to the pressure for keeping increasing or reducing with by phase Become material and maintains the second material phase.
50. being total to wherein the transformation control unit is configured to selectively activate with unit according to system described in clause 48 With the MEMS (MEMS) of positioning, to induce or maintain increased or reduced pressure on the phase-change material, thus Maintain transformation.
51. according to system described in clause 10, wherein the transformation control unit is configured to increase or reduce described The electric field induced in phase-change material is to induce from the first material mutually to the transformation of the second material phase.
52. according to system described in clause 51, wherein the transformation control unit is configured to what maintenance increased or reduced Electric field is to maintain the second material phase for the phase-change material.
53. wherein phase-change material includes the material with paraelectric phase and ferroelectric phase according to system described in clause 52.
54. according to system described in clause 51, wherein phase-change material includes ferroelectric material, and changes and be in no residual polarization State and state with residual polarization between.
55. wherein ferroelectric material includes BaTiO according to system described in clause 543、PbTiO3With one of PZT or a variety of.
56. wherein phase-change material includes antiferroelectric materials according to system described in clause 51.
57. wherein phase-change material includes multi-ferroic material according to system described in clause 51.
58. wherein multi-ferroic material shows ferroelectricity and ferromagnetic property according to system described in clause 57.
59. according to system described in clause 10, wherein the transformation control unit is configured as increasing or reducing in the phase transformation The magnetic field incuded in material, to induce from the first material mutually to the transformation of the second material phase.
60. according to system described in clause 59, wherein transformation control unit is configured as keeping reducing or the magnetic field of reduction is to incite somebody to action Phase-change material is maintained at the second material phase.
61. wherein phase-change material includes ferromagnetic material according to system described in clause 59.
62. wherein phase-change material includes ferrimagnetic material according to system described in clause 59.
63. wherein phase-change material includes antiferromagnet according to system described in clause 59.
64. wherein phase-change material includes multi-ferroic material according to system described in clause 59.
65. being determined jointly wherein transformation control unit is configured as selectively activating with unit according to system described in clause 59 The electromagnet of position.
66. wherein state change materials include the stimulation in response to application and connect electromagnetic property according to system described in clause 8 The material of continuous variation.
67. according to system described in clause 1, wherein the material with adjustable includes the state change materials, and wherein described Transformation control unit is configured as selectively making the electromagnetic property of the state change materials to change.
68. wherein the variation of the electromagnetic property of state change materials is continuous and gradual change according to system described in clause 67 One of.
69. according to system described in clause 67, wherein electrical characteristics or magnetic characteristic include the complex dielectric permittivity of state change materials, The dielectric constant of middle state change materials can be adjusted between the first dielectric constant and the second dielectric constant.
70. according to system described in clause 69, wherein the first complex dielectric permittivity includes the different real parts from the second dielectric constant Or imaginary part.
71. according to system described in clause 67, wherein the state change materials are configured to respond to temperature, pressure, electric field In the first state with first group of electromagnetic property and there are second group of electrical characteristics with one of magnetic field or a variety of variations Or change between the second state of magnetic characteristic.
72. wherein state change materials include superconductor according to system described in clause 71, and wherein state change be Between superconducting state and non-superconducting state.
73. wherein state change materials include para-electric according to system described in clause 67.
74. wherein para-electric includes SrTiO according to system described in clause 733With one of BaSrTi or a variety of.
75. according to system described in clause 67, wherein the transformation control unit is configured as mentioning to the state change materials For being heated or cooled, with the temperature-induced transformation for the electromagnetic property.
76. according to system described in clause 75, wherein transformation control unit is configured as continuing to provide being heated or cooled to maintain The transformation of the electromagnetic property of state change materials.
77. according to system described in clause 75, wherein the transformation control unit is configured to selectively activate and the list Member heating or cooling element positioned jointly is to induce or maintain the transformation.
78. according to system described in clause 75, wherein state change materials include thermoelectric material, and wherein temperature-induced turn Change includes the electropolarized change of the thermoelectric material as temperature funtion.
79. according to system described in clause 67, wherein transformation control unit is configured as increasing or reducing on state change materials Pressure to induce the variation of electromagnetic property.
80. according to system described in clause 79, wherein the transformation control unit is configured to selectively activate and list Member MEMS (MEMS) positioned jointly is increased or reduction on the state change materials to induce or maintain Pressure.
81. wherein state change materials include magnetostriction materials according to system described in clause 79.
82. according to system described in clause 67, wherein transformation control unit is configured as increasing or reducing and is incident on state change Electric field on material, to induce the variation of electrical characteristics or magnetic characteristic.
83. wherein state change materials include para-electric according to system described in clause 82.
84. wherein para-electric includes SrTiO according to system described in clause 833With one of BaSrTi or a variety of.
85. wherein state change materials include ferroelectric material according to system described in clause 82.
86. wherein ferroelectric material includes BaTiO according to system described in clause 853、PbTiO3With one of PZT or a variety of.
87. wherein state change materials include antiferroelectric materials according to system described in clause 82.
88. wherein state change materials include multi-ferroic material according to system described in clause 82.
89. wherein multi-ferroic material shows ferroelectricity and ferromagnetic characteristic according to system described in clause 88.
90. according to system described in clause 88, wherein the multi-ferroic material is BiFeO3Or YMnO3One of.
91. according to system described in clause 67, wherein transformation control unit is configured as increasing or reducing and is incident on state change Magnetic field on material, to induce the change of electromagnetic property.
92. wherein state change materials include ferromagnetic material according to system described in clause 91.
93. wherein state change materials include ferrimagnetic material according to system described in clause 91.
94. wherein state change materials include antiferromagnet according to system described in clause 91.
95. according to system described in clause 91, wherein the state change materials include multi-ferroic material.
96. being determined jointly wherein transformation control unit is configured to selectively activate with unit according to system described in clause 91 The electromagnet of position, to induce the variation of electromagnetic property.
97. according to system described in clause 1, wherein the material with adjustable includes having at least one of multiple possible phases Phase-change material, the phase-change material include state change materials.
98. according to system described in clause 1, wherein the radiating element includes resonant element, wherein corresponding to radiating element The regulating element is configured as modifying the resonant element to the response of the shared feed to control corresponding radiating element At least one of the activation or the radiation level.
99. according to system described in clause 98, wherein each regulating element is configured to adjust the product of the resonance of corresponding radiating element Prime factor.
100. wherein regulating element includes variable resistance according to system described in clause 99.
101. according to system described in clause 1, wherein the regulating element include activation for controlling the radiating element or The switch of radiation level, wherein the material with adjustable modifies the resistance of the switch.
102. according to system described in clause 1, wherein the shared feed includes transmission line (TL).
103. wherein TL includes the TL for microwave frequency electromagnetic wave according to system described in clause 102.
104. wherein TL includes the TL for radio frequency electromagnetic according to system described in clause 102.
105. wherein TL includes the TL for electromagnetic infrared wave according to system described in clause 102.
106. wherein waveguide includes the TL for optical frequency electromagnetic wave according to system described in clause 102.
107. according to system described in clause 1, wherein shared feed includes the conductor for conduction time correlated current signal.
108. according to system described in clause 1, wherein shared feed includes the surface bounded structure for lead schedule surface wave.
109. according to system described in clause 1, wherein the shared feed include gradually sent out with the adaptive unit array ground or The radiator of reactivity coupling.
110. according to system described in clause 1, wherein shared feed includes the radiator coupled with adaptive unit array radiation.
111. wherein adaptive unit array covers shared feed according to system described in clause 1.
112. a kind of method comprising:
Electromagnetic signal is conveyed to shared feed；
Electromagnetic signal is fed to adaptive unit array from shared feed, wherein each unit include radiating element and with radiation Element regulating element positioned jointly, and
The electromagnetism for modifying the material with adjustable of at least one regulating element by the transformation control unit of at least one regulating element is special Property, at least one of activation or the radiation level for controlling radiating element.
113. wherein material with adjustable includes phase-change material according to method described in clause 112.
114. wherein material with adjustable includes state change materials according to method described in clause 112.
115. wherein material with adjustable is before the induction variation of the electromagnetic property of changeable material according to method described in clause 112 The electromagnetic field provided by sharing feed is substantially provided.
116. according to method described in clause 112, wherein after the induction variation of the electromagnetic property of material with adjustable, material with adjustable The electromagnetic field provided by sharing feed is substantially provided.
117. wherein material with adjustable is before the induction variation of the electromagnetic property of material with adjustable according to method described in clause 112 The electromagnetic field provided by sharing feed is substantially provided later.
118. wherein phase-change material includes between discrete structure change or material phase transformation according to method described in clause 113 The material of the Discrete Change of the electrical characteristics for leading to material with adjustable or magnetic characteristic of transformation.
119. according to method described in clause 112, wherein material with adjustable includes phase-change material, and wherein changes control unit quilt It is configured to selectively induce the phase transformation in phase-change material.
120. according to method described in clause 119, wherein phase-change material is configured in the first material phase and the second material phase Between change.
121. wherein phase-change material includes that its electromagnetic property depends on working as the phase-change material according to method described in clause 120 The material of preceding material phase.
122. according to method described in clause 121, wherein the electromagnetic property includes the complex dielectric permittivity of the phase-change material, In, when the present material mutually includes the first material phase, the phase-change material includes being different from mutually wrapping in present material First dielectric constant of the second dielectric constant when including the second material phase.
123. according to method described in clause 122, wherein first dielectric constant includes different from second dielectric constant Real part or imaginary part.
124., wherein first material mutually includes liquid phase, second material mutually includes gas according to method described in clause 123 Phase.
125., wherein first material mutually includes crystalline solid phase, second material mutually wraps according to method described in clause 123 Solid phase containing amorphous.
126. according to method described in clause 123, wherein the phase-change material is capable of forming a variety of stable states or metastable state homoatomic is different Body form.
127. according to method described in clause 123, wherein first material mutually includes the first crystalline solid phase, and wherein described Second material mutually includes the second crystalline solid phase.
128. according to method described in clause 119, wherein the phase-change material is configured to change between a variety of metastable phases, wherein A variety of metastable phases can have in common temperature range and common pressure limit.
129. according to method described in clause 128, wherein the phase-change material includes reversible phase transition material, wherein sub- from first After steady phase transition to the second metastable phase, the phase transformation transformation is reversible to rotate back into first metastable phase.
130. according to method described in clause 129, wherein the phase-change material includes chalcogenide materials.
131. according to method described in clause 130, wherein the chalcogenide materials include GeTe, GeSbTe, AgInSbTe, One of InSe, SbSe, SbTe, InSbSe, InSbTe, GeSbSe, GeSbTeSe and AgInSbSeTe or a variety of.
132. according to method described in clause 129, wherein first metastable phase includes amorphous solid phase, and wherein described second Metastable phase includes crystalline solid phase.
133. according to method described in clause 132, wherein the phase-change material is usually to be electrically insulated under first metastable phase 's.
134. according to method described in clause 133, wherein the phase-change material is non-conductor, example under second metastable phase Such as semiconductor, semimetal or low conductive metal.
135. according to method described in clause 119, wherein the phase-change material is configured as in the first material phase and the second material Change between phase, wherein second material mutually needs different temperatures, one in different pressures, not same electric field or different magnetic field Kind is a variety of, and phase-change material is maintained at its second phase.
136. according to method described in clause 119, wherein the phase-change material is configured in the first material phase and the second material phase Between change, wherein the first material phase mutually has different electron band structures with second material.
137. according to method described in clause 119, wherein the phase transformation in phase-change material be related to phase-change material and second medium it Between atom or ion migration.
138. according to method described in clause 119, wherein the phase-change material includes reversible phase transition material, wherein from the first material After expecting phase transition to the second material phase, the phase-change material is reversible to rotate back into the first material phase.
139. wherein the phase-change material includes superconductor, and the phase transformation is super according to method described in clause 138 Lead the phase transformation mutually between nonsuperconducting phase.
140. according to method described in clause 134, wherein the phase-change material includes vanadium dioxide (VO2)。
141. methods according to clause 138, wherein the transformation packet between the first material phase and the second material phase Include the transformation between two kinds of allotropic forms.
142. methods according to clause 138, wherein the reversible transition in the phase-change material is included in the phase-change material The migration of ion between second medium.
143. methods according to clause 142, intermediate ion include oxonium ion or oxygen-containing molecules ion.
144. methods according to clause 119, wherein the transformation control unit is configured as providing to the phase-change material Be heated or cooled, with for from the first material mutually to the temperature-induced transformation of the second material phase.
145. methods according to clause 144, wherein the transformation control unit is configured as continuing to provide being heated or cooled The phase-change material is maintained at the second material phase.
146. methods according to clause 144, wherein the transformation control unit be configured to selectively to activate with it is described Unit heating or cooling element positioned jointly, to induce or maintain the transformation.
147. methods according to clause 144, wherein the temperature-induced transformation include solid phase, liquid phase, gas phase and wait from First order transition between two or more in daughter phase.
148. methods according to clause 144, wherein the temperature-induced transformation include two kinds of solid allotropes it Between second order trnasition.
149. methods according to clause 144, wherein temperature-induced transformation includes turning between ferromagnetic phase and non-ferromagnetic phase Become.
150. methods according to clause 144, wherein temperature-induced transformation includes turning between superconducting phase and nonsuperconducting phase Become.
151. methods according to clause 144, wherein the temperature-induced transformation includes between paraelectric phase and ferroelectric phase Transformation.
152. methods according to clause 144, wherein the temperature-induced transformation includes chemical reaction, the chemical reaction Energy barrier be overcome more than threshold temperature.
153. methods according to clause 144, wherein phase-change material includes thermoelectric material, and wherein temperature-induced transformation Electropolarized change including the thermoelectric material as temperature funtion.
154. methods according to clause 119, wherein the transformation control unit is configured to increase or reduce the phase transformation Pressure on material, to induce from first material mutually to the transformation of the second material phase.
155. methods according to clause 154, wherein transformation control unit is configured to the pressure for keeping increasing or reducing to incite somebody to action Phase-change material maintains the second material phase.
156. methods according to clause 154, wherein the transformation control unit is configured to selectively to activate and unit MEMS (MEMS) positioned jointly, to induce or maintain increased or reduced pressure on the phase-change material, from And maintain transformation.
157. methods according to clause 119, wherein the transformation control unit is configured to increase or reduce incidence Electric field on the phase-change material is to induce from the first material mutually to the transformation of the second material phase.
158. methods according to clause 157, wherein the transformation control unit is configured to maintain to increase or reduce Electric field the phase-change material is maintained the second material phase.
159. methods according to clause 158, wherein phase-change material includes the material with paraelectric phase and ferroelectric phase.
160. methods according to clause 157, wherein phase-change material includes ferroelectric material, and changing is in no remaining pole Between the state of change and state with residual polarization.
161. methods according to clause 160, wherein ferroelectric material includes BaTiO3、PbTiO3With one of PZT or more Kind.
162. methods according to clause 157, wherein phase-change material includes antiferroelectric materials.
163. methods according to clause 157, wherein phase-change material includes multi-ferroic material.
164. methods according to clause 119, wherein the transformation control unit is configured as increasing or reducing in the phase Become the magnetic field on material, to induce from the first material mutually to the transformation of the second material phase.
165. methods according to clause 164, wherein transformation control unit be configured as keep reduce or reduction magnetic field with Phase-change material is maintained at the second material phase.
166. methods according to clause 164, wherein phase-change material includes ferromagnetic material.
167. methods according to clause 164, wherein phase-change material includes ferrimagnetic material.
168. methods according to clause 164, wherein phase-change material includes antiferromagnet.
169. methods according to clause 164, wherein phase-change material includes multi-ferroic material.
170. methods according to clause 164, wherein transformation control unit be configured as selectively activating it is common with unit The electromagnet of positioning.
171. methods according to clause 114, wherein state change materials include the stimulation in response to application and keep electromagnetism special The material of property consecutive variations.
172. methods according to clause 112, wherein the material with adjustable includes the state change materials, and wherein institute Stating transformation control unit is configured as selectively making the electromagnetic property of the state change materials to change.
173. methods according to clause 172, wherein the variation of the electromagnetic property of state change materials is continuous and gradual change One of.
174. methods according to clause 172, wherein electrical characteristics or magnetic characteristic include the dielectric constant of state change materials, The dielectric constant of middle state change materials can be adjusted between the first dielectric constant and the second dielectric constant.
175. methods according to clause 174, wherein the first dielectric constant includes the different real parts from the second dielectric constant Or imaginary part.
176. methods according to clause 172, wherein the state change materials are configured to respond to temperature, pressure, electricity And one of magnetic field or a variety of variations and in the first state with first group of electrical characteristics or magnetic characteristic and with second Change between group electrical characteristics or the second state of magnetic characteristic.
177. methods according to clause 176, wherein state change materials include superconductor, and wherein state change is Between superconducting state and non-superconducting state.
178. methods according to clause 172, wherein state change materials include para-electric.
179. methods according to clause 178, wherein para-electric includes SrTiO3With one of BaSrTi or a variety of.
180. methods according to clause 172, wherein the transformation control unit is configured as to the state change materials Offer is heated or cooled, with the temperature-induced transformation for the electrical characteristics or magnetic characteristic.
181. methods according to clause 180, wherein transformation control unit is configured as continuing to provide being heated or cooled to tie up Hold the transformation of the electrical characteristics or magnetic characteristic of state change materials.
182. methods according to clause 180, wherein the transformation control unit be configured to selectively to activate with it is described Unit heating or cooling element positioned jointly is to induce or maintain the transformation.
183. methods according to clause 180, wherein state change materials include thermoelectric material, and wherein temperature-induced Transformation includes the electropolarized change of the thermoelectric material as temperature funtion.
184. methods according to clause 172, wherein transformation control unit is configured as increasing or reducing state change materials On pressure to induce the variations of electrical characteristics or magnetic characteristic.
185. methods according to clause 184, wherein the transformation control unit be configured to selectively activate with Unit MEMS positioned jointly (MEMS) is to induce or maintain the increased or reduction on the state change materials Pressure.
186. methods according to clause 184, wherein state change materials include magnetostriction materials.
187. methods according to clause 172, wherein transformation control unit, which is configured as increasing or reducing, is incident on state change Change the electric field on material, to induce the variation of electrical characteristics or magnetic characteristic.
188. methods according to clause 187, wherein state change materials include para-electric.
189. methods according to clause 188, wherein para-electric includes SrTiO3With one of BaSrTi or a variety of.
190. methods according to clause 187, wherein state change materials include ferroelectric material.
191. methods according to clause 190, wherein ferroelectric material includes BaTiO3、PbTiO3With one of PZT or more Kind.
192. methods according to clause 187, wherein state change materials include antiferroelectric materials.
193. methods according to clause 187, wherein state change materials include multi-ferroic material.
194. methods according to clause 172, wherein transformation control unit, which is configured as increasing or reducing, is incident on state change Change the magnetic field on material, to induce the change of electrical characteristics or magnetic characteristic.
195. methods according to clause 194, wherein state change materials include ferromagnetic material.
196. methods according to clause 194, wherein state change materials include ferrimagnetic material.
197. methods according to clause 194, wherein state change materials include antiferromagnet.
198. methods according to clause 194, wherein the state change materials include multi-ferroic material.
199. methods according to clause 194, wherein transformation control unit be configured to selectively activate it is common with unit The electromagnet of positioning, to induce the variation of electromagnetic property.
200. methods according to clause 112, wherein the material with adjustable includes at least one had in multiple possible phases A phase-change material, the phase-change material include state change materials.
201. methods according to clause 112, wherein the radiating element includes resonant element, wherein corresponding to radiating element The regulating element be configured as modifying the resonant element to the response of the shared feed to control corresponding radiating element The activation or at least one of the radiation level.
202. methods according to clause 201, wherein each regulating element is configured to adjust the resonance of corresponding radiating element Quality factor.
203. methods according to clause 202, wherein regulating element includes variable resistance.
204. methods according to clause 112, wherein the regulating element includes the activation for controlling the radiating element Or the switch of radiation level, wherein the material with adjustable modifies the resistance of the switch.
205. methods according to clause 112, wherein the shared feed includes transmission line (TL).
206. methods according to clause 205, wherein TL includes the TL for microwave frequency electromagnetic wave.
207. methods according to clause 205, wherein TL includes the TL for radio frequency electromagnetic.
208. methods according to clause 205, wherein TL includes the TL for electromagnetic infrared wave.
209. methods according to clause 205, wherein waveguide includes the TL for optical frequency electromagnetic wave.
210. methods according to clause 205, wherein shared feed includes the conductor for conduction time correlated current signal.
211. methods according to clause 205, wherein shared feed includes the surface bounded structure for lead schedule surface wave.
212. methods according to clause 205, wherein adaptive unit array covers shared feed.
A kind of 213. systems comprising:
First layer comprising shared feed；
The second layer comprising radiating element arraying, wherein one or more adjacent radiating elements in radiating element and the second layer Reactivity coupling；
Third layer comprising the near-field coupling element array with the radiating element couples in the second layer, wherein each coupling element It is configured as selectively controlling the field coupled level between one or more radiating elements and the shared feed,
Multiple coupling control units are configured as controlling the field coupled level between one or more radiating elements, wherein coupling It closes control unit and the electromagnetic field provided by sharing feed is substantially provided.
214. systems according to clause 213, wherein the multiple coupling control unit is embedded in third layer.
215. systems according to clause 213, wherein the multiple coupling control unit is located in the 4th layer and by means of leading Electric connector is electrically coupled to the coupling element in third layer.
216. systems according to clause 215, wherein Elecrical connector includes through-hole.
217. systems according to clause 213, wherein the coupling element for one or more radiating elements is located at shared feedback Between source and one or more corresponding radiating elements, swashing on one or more radiating elements is incident on to control from shared feed Encourage intensity.
218. systems according to clause 213, wherein third layer is between first layer and the second layer.
219. systems according to clause 213, wherein one or more of first, second, and third layer is not really flat Smooth layer.
220. systems according to clause 213, wherein one or more of first, second, and third layer with other two layer In one or more intersections or be at least partly overlapped.
221. systems according to clause 213, wherein each coupling element is configured as adjusting shared feed and one or more The size of opening between a corresponding radiating element.
222. systems according to clause 221, wherein shared feed includes transmission line, and wherein each coupling element includes Mechanical aperture, wherein coupling control unit controls mechanical aperture to adjust the aperture between TL and one or more radiating elements Size.
223. systems according to clause 213, wherein each coupling element is configured as adjusting shared feed and one or more The distance between a radiating element.
224. systems according to clause 223, wherein each coupling element includes mechanical actuator, with adjust shared feed and The distance between one or more radiating elements.
225. systems according to clause 213, wherein each coupling element is configured as modifying shared feed and one or more Electromagnetic resistivity between a radiating element.
226. systems according to clause 225, wherein electromagnetic resistivity includes passive impedance, and wherein coupling element includes inciting somebody to action Variable resistance of one or more radiating element couples to shared feed.
227. systems according to clause 225, wherein electromagnetic resistivity includes active impedance, and wherein coupling element includes inciting somebody to action Variable condenser of one or more radiating element couples to shared feed.
228. systems according to clause 225, middle impedance include source impedance, and wherein coupling element includes by one Or multiple radiating element couples are to the variometer of shared feed.
229. systems according to clause 213, wherein each coupling element in third layer corresponds to one in the second layer Radiating element.
230. systems according to clause 213, wherein each coupling element in third layer corresponds to being more than in the second layer One radiating element.
231. systems according to clause 213, wherein each radiating element in the second layer corresponds to being more than in third layer One coupling element.
232. systems according to clause 213, wherein shared feed includes transmission line (TL).
233. systems according to clause 232, wherein TL includes the TL for microwave frequency electromagnetic wave.
234. systems according to clause 232, wherein TL includes the TL for radio frequency electromagnetic.
235. systems according to clause 232, wherein TL includes the TL for electromagnetic infrared wave.
236. systems according to clause 232, wherein TL includes the TL for optical frequency electromagnetic wave.
237. systems according to clause 213, wherein shared feed includes the conductor for conduction time correlated current signal.
238. systems according to clause 213, wherein shared feed includes the surface bounded structure for lead schedule surface wave.
A kind of 239. systems comprising:
Shared feed；
Adaptive unit array, wherein each unit include radiating element and with each radiating element adjustable member positioned jointly Part；
Bias component is used to provide DC biasing for each adjustable element, wherein DC of the selection for each adjustable element is biased To increase the linearity of the operation of adjustable element, to reduce signal intermodulation；And
Activating part is configured as the adjustable element by tuning radiating element to control in response to sharing the energy in feed The activation of radiating element processed or radiation level.
240. systems according to clause 239, wherein the shared feed includes transmission line (TL).
241. systems according to clause 240, wherein TL includes the TL for microwave frequency electromagnetic wave.
242. systems according to clause 240, wherein the TL includes the TL for radio frequency electromagnetic.
243. systems according to clause 240, wherein TL includes the TL for electromagnetic infrared wave.
244. systems according to clause 240, wherein waveguide includes the TL for optical frequency electromagnetic wave.
245. systems according to clause 239, wherein the shared feed includes for conduction time correlated current signal Conductor.
246. systems according to clause 239, wherein shared feed includes the conductor for lead schedule surface wave.
247. systems according to clause 239, wherein shared feed includes be coupled to adaptive unit array spoke with gradually sending out Emitter.
248. systems according to clause 239, wherein shared feed includes reactively being coupled to adaptive unit array Radiator.
249. systems according to clause 239, wherein shared feed includes the radiation that adaptive unit array is coupled in radiation Device.
250. systems according to clause 239, wherein the adaptive unit array covers the shared feed.
251. systems according to clause 239, wherein the activating part is configured to by applying on DC biasing Add modified voltage to control radiation.
252. systems according to clause 239, wherein the activating part is configured to by described to being different from being applied with The electric terminal of the terminal of DC biasing provides signal to control radiation.
253. systems according to clause 239, wherein activating part be configured to by cause adjustable element it is mechanically actuated come Control radiation.
254. systems according to clause 239, wherein radiating element includes resonant element, wherein correspond to radiating element can Element is adjusted to be configured as activation or radiation level that modification resonant element controls the response of shared feed corresponding radiating element.
255. systems according to clause 254, wherein each adjustable element is configured to adjust the resonance frequency of corresponding radiating element Rate.
256. systems according to clause 255, wherein activating part is configured as selectively tuning corresponding radiating element Adjustable element is to match the frequency in shared feed, thus the radiation of activating radiation element.
257. systems according to clause 255, wherein adjustable element be configured to selectively to modify the capacitor of radiating element or Inductance.
258. systems according to clause 257, wherein adjustable element includes the variable condenser based on semiconductor junction.
259. systems according to clause 258, wherein variable condenser includes diode.
260. systems according to clause 259, wherein diode includes varactor.
261. systems according to clause 258, wherein variable condenser includes transistor.
262. systems according to clause 257, wherein adjustable element includes the variable condenser based on ferroelectric material.
263. systems according to clause 262, wherein ferroelectric material includes barium strontium titanate (BST).
264. systems according to clause 257, wherein adjustable element includes the variable condenser based on liquid crystal media.
265. systems according to clause 254, wherein each adjustable element is configured to adjust the resonance of corresponding radiating element Quality factor.
266. systems according to clause 265, wherein adjustable element includes variable resistance.
267. systems according to clause 266, wherein variable resistance includes the resistor based at least one semiconductor junction.
268. systems according to clause 267, wherein variable resistance includes diode.
269. systems according to clause 268, wherein diode is included in p-type semiconductor region and n-type semiconductor region With the diode of intrinsic semiconductor region between (PIN diode).
270. systems according to clause 266, wherein variable resistance includes transistor.
271. systems according to clause 270, wherein transistor includes field effect transistor (FET).
272. systems according to clause 271 operate wherein the transistor is configured with common source, wherein the gate terminal It is operated as throwing with drain terminal, and source terminal is operated as switch terminal.
273. systems according to clause 271, wherein variable resistance include between gate terminal and AC signal it is high every From degree.
274. systems according to clause 273, wherein radiating element further includes one in radio-frequency choke and insulation control line It is a or multiple.
275. systems according to clause 265, wherein radiating element is to shunt reflection.
276. systems according to clause 275, wherein the radiation on-state of radiating element corresponds to corresponding with radiating element Adjustable element switch OFF state.
277. systems according to clause 254, wherein each adjustable element is configured to adjust the resonant intensity of radiating element.
278. systems according to clause 277, wherein resonant intensity includes the intensity of electric dipole or magnetic dipole resonance.
279. systems according to clause 277, wherein DC biasing deactivates or activates the one of the resonant element of corresponding radiating element Part.
280. systems according to clause 279, wherein radiating element includes the multiple conducting wires being connected in series, wherein in conducting wire One or more is activated or is deactivated based on DC biasing, effectively to modify the length of radiating element.
281. systems according to clause 254, wherein adjustable element is configured as adjusting the product of the resonance of corresponding radiating element Two or more in the resonant intensity of prime factor, the resonance frequency of corresponding radiating element and radiating element.
A kind of 282. methods comprising:
It is biased to be determined for the adjustable element of adaptive radiating element arraying, wherein each radiating element includes and each radiation Element adjustable element positioned jointly, wherein the adaptive array of radiating element is coupled with shared feed；
Biasing is provided for each adjustable element, wherein selection increases the operation of adjustable element for the biasing of each adjustable element The linearity, to reduce the intermodulation between radiating element；And
By tuning the adjustable element of radiating element, activation or the spoke of radiating element are controlled in response to sharing the energy in feed Range degree.
283. methods according to clause 282, wherein the shared feed includes transmission line (TL).
284. methods according to clause 283, wherein TL includes the TL for microwave frequency electromagnetic wave.
285. methods according to clause 283, wherein the TL includes the TL for radio frequency electromagnetic.
286. methods according to clause 283, wherein TL includes the TL for electromagnetic infrared wave.
287. methods according to clause 283, wherein waveguide includes the TL for optical frequency electromagnetic wave.
288. methods according to clause 282, wherein the shared feed includes for conduction time correlated current signal Conductor.
289. methods according to clause 282, wherein shared feed includes the conductor for lead schedule surface wave.
290. methods according to clause 282, wherein shared feed includes be coupled to adaptive unit array spoke with gradually sending out Emitter.
291. methods according to clause 282, wherein shared feed includes reactively being coupled to adaptive unit array Radiator.
292. methods according to clause 282, wherein shared feed includes the radiation that adaptive unit array is coupled in radiation Device.
293. methods according to clause 282, wherein the adaptive unit array covers the shared feed.
294. methods according to clause 282 further include applying warp on DC biasing by the activating part The voltage of modification radiates to control.
295. methods according to clause 282 further include that being different from, to be applied with the DC inclined by the activating part The electric terminal for the terminal set provides signal to control radiation.
296. methods according to clause 282 further include that the mechanically actuated of adjustable element is caused to be controlled by activating part System radiation.
297. methods according to clause 282, wherein radiating element includes resonant element, wherein correspond to radiating element can Element is adjusted to be configured as activation or radiation level that modification resonant element controls the response of shared feed corresponding radiating element.
298. methods according to clause 297, wherein each adjustable element is configured to adjust the resonance frequency of corresponding radiating element Rate.
299. methods according to clause 298 further include that corresponding radiating element is selectively tuned by activating part Adjustable element is to match the frequency in shared feed, thus the radiation of activating radiation element.
300. methods according to clause 298, wherein adjustable element be configured to selectively to modify the capacitor of radiating element or Inductance.
301. methods according to clause 300, wherein adjustable element includes the variable condenser based on semiconductor junction.
302. methods according to clause 301, wherein variable condenser includes diode.
303. methods according to clause 302, wherein diode includes varactor.
304. methods according to clause 301, wherein variable condenser includes transistor.
305. methods according to clause 300, wherein adjustable element includes the variable condenser based on ferroelectric material.
306. methods according to clause 305, wherein ferroelectric material includes barium strontium titanate (BST).
307. methods according to clause 300, wherein adjustable element includes the variable condenser based on liquid crystal media.
308. methods according to clause 297 further include the resonance for adjusting the corresponding radiating element of each adjustable element Quality factor.
309. methods according to clause 308, wherein adjustable element includes variable resistance.
310. methods according to clause 309, wherein variable resistance includes the resistor based at least one semiconductor junction.
311. methods according to clause 310, wherein variable resistance includes diode.
312. methods according to clause 311, wherein diode is included in p-type semiconductor region and n-type semiconductor region With the diode of intrinsic semiconductor region between (PIN diode).
313. methods according to clause 309, wherein variable resistance includes transistor.
314. methods according to clause 313, wherein transistor includes field effect transistor (FET).
315. methods according to clause 314 operate wherein the transistor is configured with common source, wherein the gate terminal It is operated as throwing with drain terminal, and source terminal is operated as switch terminal.
316. methods according to clause 314, wherein variable resistance include between gate terminal and AC signal it is high every From degree.
317. methods according to clause 316, wherein radiating element further includes one in radio-frequency choke and insulation control line It is a or multiple.
318. methods according to clause 308, wherein radiating element is to shunt reflection.
319. methods according to clause 318, wherein the radiation on-state of radiating element corresponds to corresponding with radiating element Adjustable element switch OFF state.
320. methods according to clause 297, wherein each adjustable element is configured to adjust the resonant intensity of radiating element.
321. methods according to clause 320, wherein resonant intensity includes the intensity of electric dipole or magnetic dipole resonance.
322. methods according to clause 320, wherein DC biasing deactivates or activates the one of the resonant element of corresponding radiating element Part.
323. methods according to clause 322, wherein radiating element includes the multiple conducting wires being connected in series, wherein in conducting wire One or more is activated or is deactivated based on DC biasing, effectively to modify the length of radiating element.
324. methods according to clause 297, wherein adjustable element is configured as adjusting the product of the resonance of corresponding radiating element Two or more in the resonant intensity of prime factor, the resonance frequency of corresponding radiating element and radiating element.
A kind of 325. systems comprising:
Shared feed；
Adaptive unit array, each unit includes at least one radiating element, wherein each radiating element includes for selecting Radiating element is tuned to property to reduce the switch fixed capacitor array of signal intermodulation, wherein the switch fixed capacitor array Each of with corresponding radiating element co-locate；With
Activating part is configured as by enabling or disabling the capacitor in the switch fixed capacitor array come in response to institute Shared feed is stated to control activation or the radiation level of radiating element.
326. systems according to clause 325, wherein radiating element includes resonant element, wherein switch fixed capacitor array It is configured as modifying activation or radiation level that corresponding radiating element controls the response of shared feed corresponding radiating element.
327. systems according to clause 326, wherein each of switch fixed capacitor array is configured as modification phase Answer the resonance frequency of radiating element.
328. systems according to clause 325, wherein each of switch fixed capacitor array is configured as being based on opening Which capacitor closed in fixed capacitor array is activated or is deactivated to provide discrete groups of possible capacitance.
329. systems according to clause 325, wherein activating part be configured as by serial or parallel bus to opening Close fixed capacitor array provide signal come selectively activate or deactivation switch fixed capacitor array in capacitor one It is a or multiple, to control activation or the radiation level of radiating element.
330. systems according to clause 330, wherein the signal includes digital signal.
331. systems according to clause 330, wherein activating part provides signals to the of switch fixed capacitor array One terminal, and voltage wherein from shared feed or signal are provided to switch at one or more Second terminals and fix The capacitor of array of capacitors is to decouple the control from shared feed.
332. systems according to clause 325, wherein the switch fixed capacitor array includes one or more micro electronmechanical System (MEMS) capacitor.
333. systems according to clause 325, wherein the switch fixed capacitor array includes one or more micro electronmechanical System (MEMS) switch, to activate or deactivate the capacitor of the switch arrays.
A kind of 334. systems comprising:
Shared feed；
Adaptive unit array with resonance radiation element, wherein each resonance radiation element includes radiating for tuned resonance The field effect transistor (FET) of the ratio of damping of element, wherein resonance radiation element include FET grid and any AC signal it Between high-isolation, to reduce the intermodulation between radiating element；With
Activating part is configured to respond to activation or the radiation level of shared feed control radiating element, wherein active portion Part controls activation or the radiation level of radiating element by providing voltage to the first terminal of FET.
335. systems according to clause 334, wherein the control line between activating part and first terminal includes shielding electromagnetism The shielded layer of wave.
336. systems according to clause 334, wherein self-adapting resonance radiating element arraying includes one or more RF chokes Circle, other by the outside of control line of the first terminal of FET with grid or between activating part and grid exchange (AC) The isolation of signal or electromagnetic wave.
A kind of 337. systems comprising:
Shared feed；
Adaptive unit array with radiating element, wherein each radiating element includes adjustable geometry, it is described can The geometry of adjusting is used to increase the linearity of operation to reduce the intermodulation between radiating element；With
Activating part is used to independently and selectively modify the geometry of radiating element, to independently control radiation element The activation of part or radiation level.
338. systems according to clause 337, wherein each radiating element includes one or more MEMS (MEMS) Capacitor, and wherein activating part is configured as the geometry by modifying one or more MEMS capacitors to modify spoke Penetrate the geometry of element.
339. systems according to clause 337, wherein activating part is configured as by offer voltage, electric and magnetic fields One or more modifies the geometry of radiating element, to lead to the improved geometry of radiating element.
340. systems according to clause 339, wherein radiating element includes piezoelectric material.
341. systems according to clause 337, wherein at least one of radiating element includes flexible screw, and is wherein swashed Component living changes the length or diameter of flexible screw.
342. systems according to clause 337, wherein radiating element includes resonant element, and wherein activating part modifies radiation element The geometry of part is to modify response of the resonant element to shared feed, to control the activation or radiation journey of corresponding radiating element Degree.
343. systems according to clause 342, wherein activating part is configured as the geometry of modification radiating element to repair Change one or more of capacitor and the inductance of radiating element.
344. systems according to clause 342, wherein activating part is configured as the geometry of modification radiating element to adjust It saves one or more in following item:
The resonance frequency of corresponding radiating element；
The resonant intensity of the radiating element；With
The quality factor of the resonance of corresponding radiating element.
Disclosed embodiment as general description in this paper attached drawing and described in component can be matched with a variety of different It sets to arrange and design.In addition, feature associated with a kind of embodiment, structurally and operationally can be adapted for combine another Feature, structure or operation or feature, structure or the behaviour suitable for being described with combination another embodiment that embodiment describes It combines.In many cases, well known structure, material or operation is not shown or described in detail to avoid each of the fuzzy disclosure Aspect.
The embodiment of the system and method provided in present disclosure is not intended to limit the scope of the present disclosure, and only generation The possible embodiment of table.In addition, the step of method be not necessarily required to any particular order or even be not necessarily required to it is suitable It executes to sequence, step does not need to be only performed once yet.As described above, illustrating described in transmitter and changing equally applicable In receiver, vice versa.
The disclosure is made that by reference to the various illustrative embodiments including optimal mode.However, this field It will be recognized that without departing from the scope of the disclosure, illustrative embodiments can be changed and Modification.Although showing the principle of the disclosure in various embodiments, structure, arrangement, ratio, element, material It can be adapted for specific environment and/or operation requirement without departing from the principle and model of the disclosure with many modifications of component It encloses.It is intended to that scheme for these and other is altered or modified to include within the scope of this disclosure.
Present disclosure should be considered as illustrative and not restrictive, and be intended to include by all such modifications scheme Within its scope.Similarly, the solution party of the benefit about various embodiments, other advantages and problem is described above Case.However, benefit, advantage, solution to the problem and may cause any benefit, advantage or solution occur or become More obvious any element is not necessarily to be construed as crucial, required or necessary feature or element.Therefore, model of the invention Enclosing should be determined by the claims that follow.

Claims (42)

1. a kind of system comprising:
Shared feed；
Adaptive unit array, wherein each unit include radiating element and with radiating element adjusting positioned jointly member Part, wherein the regulating element includes material with adjustable；With
Change control unit, is configured as selectively inducing the variation of the electromagnetic property of the material with adjustable, to control State at least one of activation or the radiation level of radiating element.
2. system according to claim 1, wherein the material with adjustable includes phase-change material, and the wherein transformation control Component processed is configured as selectively inducing the phase transformation in the phase-change material.
3. system according to claim 2, wherein the phase-change material is configured to change between a variety of metastable phases, Described in a variety of metastable phases can have in common temperature range and common pressure limit.
4. system according to claim 3, wherein the phase-change material includes reversible phase transition material, wherein sub- from first After steady phase transition to the second metastable phase, the phase transformation transformation is reversible to rotate back into first metastable phase.
5. system according to claim 4, wherein the phase-change material includes chalcogenide materials.
6. system according to claim 4, wherein first metastable phase includes amorphous solid phase, and wherein described second Metastable phase includes crystalline solid phase.
7. system according to claim 2, wherein the transformation control unit is configured as providing to the phase-change material Be heated or cooled, with for from the first material mutually to the temperature-induced transformation of the second material phase.
8. system according to claim 2, wherein the transformation control unit is configured to increase or reduce the phase transformation Pressure on material, to induce from first material mutually to the transformation of the second material phase.
9. system according to claim 2, wherein the transformation control unit is configured to increase or reduce in institute The electric field induced in phase-change material is stated to induce from the first material mutually to the transformation of the second material phase.
10. system according to claim 9, wherein the phase-change material includes ferroelectric material, and the transformation is in Do not have between the state of residual polarization and state with residual polarization.
11. system according to claim 2, wherein the transformation control unit is configured as increasing or reducing in the phase Become the magnetic field incuded in material, to induce from the first material mutually to the transformation of the second material phase.
12. system according to claim 11, wherein the phase-change material includes ferromagnetic material, ferrimagnetic material, anti-iron Magnetic material or multi-ferroic material.
13. system according to claim 1, wherein the material with adjustable includes state change materials, and wherein described Transformation control unit is configured as selectively making the electromagnetic property of the state change materials to change.
14. system according to claim 13, wherein the state change materials be configured to respond to temperature, pressure, One of electric and magnetic fields or a variety of variations and in the first state with first group of electromagnetic property and there is second group of electricity Change between characteristic or the second state of magnetic characteristic.
15. system according to claim 14, wherein the state change materials include superconductor, and wherein state Variation is between superconducting state and non-superconducting state.
16. a kind of method comprising:
Electromagnetic signal is conveyed to shared feed；
Electromagnetic signal is fed to adaptive unit array from the shared feed, wherein each unit include radiating element and with The radiating element regulating element positioned jointly, and
The electricity of the material with adjustable of at least one regulating element is modified by the transformation control unit of at least one regulating element Magnetic characteristic, at least one of activation or the radiation level for controlling the radiating element.
17. according to the method for claim 16, wherein the material with adjustable includes phase-change material, and the wherein transformation Control unit is configured to selectively induce the phase transformation in the phase-change material.
18. according to the method for claim 17, wherein the phase-change material is configured to change between a variety of metastable phases, Described in a variety of metastable phases can have in common temperature range and common pressure limit.
19. according to the method for claim 18, wherein the phase-change material includes reversible phase transition material, wherein from first After metastable phase transition to the second metastable phase, phase transformation transformation is reversible to rotate back into first metastable phase.
20. according to the method for claim 19, wherein the phase-change material includes chalcogenide materials.
21. according to the method for claim 19, wherein first metastable phase includes amorphous solid phase, and wherein described the Two metastable phases include crystalline solid phase.
22. according to the method for claim 17, wherein the transformation control unit is configured as mentioning to the phase-change material For being heated or cooled, with for from the first material mutually to the temperature-induced transformation of the second material phase.
23. according to the method for claim 17, wherein the transformation control unit is configured to increase or reduce the phase Become the pressure on material, to induce from first material mutually to the transformation of the second material phase.
24. according to the method for claim 17, wherein the transformation control unit be configured to increase or reduce into The electric field penetrated on the phase-change material is to induce from the first material mutually to the transformation of the second material phase.
25. according to the method for claim 24, wherein the phase-change material includes ferroelectric material, and the transformation be Do not have between the state of residual polarization and state with residual polarization.
26. according to the method for claim 17, wherein the transformation control unit is configured as increasing or reducing described Magnetic field on phase-change material, to induce from the first material mutually to the transformation of the second material phase.
27. according to the method for claim 26, wherein phase-change material includes ferromagnetic material, ferrimagnetic material, antiferromagnetic material Material or multi-ferroic material.
28. according to the method for claim 16, wherein the material with adjustable includes the state change materials, and wherein The transformation control unit is configured as selectively making the electromagnetic property of the state change materials to change.
29. according to the method for claim 28, wherein the state change materials be configured to respond to temperature, pressure, One of electric and magnetic fields or a variety of variations and in the first state with first group of electrical characteristics or magnetic characteristic and have the Change between two groups of electrical characteristics or the second state of magnetic characteristic.
30. according to the method for claim 29, wherein the state change materials include superconductor, and wherein state Variation is between superconducting state and non-superconducting state.
31. a kind of system comprising:
First layer comprising shared feed；
The second layer comprising radiating element arraying, wherein one or more adjacent radiations in radiating element and the second layer The coupling of element reactivity；
Third layer comprising the near-field coupling element array with the radiating element couples in the second layer, wherein each Coupling element is configured as selectively controlling the field coupled level between one or more radiating elements and the shared feed,
Multiple coupling control units are configured as controlling the field coupled level between one or more of radiating elements, Described in coupling control unit the electromagnetic field provided by the shared feed is substantially provided.
32. system according to claim 31, wherein being used for the coupling element of one or more of radiating elements Between the shared feed and corresponding one or more of radiating elements, it is incident on control from the shared feed Excitation density on one or more of radiating elements.
33. the system according to claim 31 or 32, wherein the third layer is located at the first layer and the second layer Between.
34. the system according to any one of claim 31-33, wherein each coupling element be configured as adjusting it is described total Enjoy the size of the opening between feed and one or more of corresponding radiating elements.
35. the system according to any one of claim 31-34, wherein each coupling element be configured as adjusting it is described total Enjoy the distance between feed and one or more of radiating elements.
36. the system according to any one of claim 31-35, wherein each coupling element be configured as modifying it is described total Enjoy the electromagnetic resistivity between feed and one or more of radiating elements.
37. system according to claim 36, wherein electromagnetic resistivity includes passive impedance, and the wherein coupling element Including by one or more of radiating element couples to the variable resistance of the shared feed, variable condenser or variable Inductor.
38. the system according to any one of claim 31-37, wherein each coupling element in the third layer is corresponding A radiating element in the second layer.
39. the system according to any one of claim 31-37, wherein each coupling element in the third layer is corresponding More than one radiating element in the second layer.
40. the system according to any one of claim 31-37, wherein each radiating element in the second layer is corresponding More than one coupling element in the third layer.
41. the system according to any one of claim 31-40, wherein the shared feed includes transmission line (TL).
42. the system according to any one of claim 31-40, wherein the shared feed includes being used for lead schedule surface wave Surface bounded structure.
CN201780030664.4A 2016-03-22 2017-03-22 System and method for reducing intermodulation of electronically controlled adaptive antenna arrays Expired - Fee Related CN109155458B (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111510546A (en) * 2020-04-24 2020-08-07 Oppo广东移动通信有限公司 Terminal
CN111628269A (en) * 2020-06-22 2020-09-04 福耀玻璃工业集团股份有限公司 Frequency-adjustable antenna, manufacturing method and antenna device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5027127A (en) * 1985-10-10 1991-06-25 United Technologies Corporation Phase alignment of electronically scanned antenna arrays
CN103022729A (en) * 2012-12-27 2013-04-03 北京航天福道高技术股份有限公司 Method for designing planar phase-control and reflective array antenna
CN103975483A (en) * 2011-09-27 2014-08-06 默克专利股份有限公司 Electronically steerable planar phased array antenna
CN104466351A (en) * 2014-11-06 2015-03-25 中国运载火箭技术研究院 Synthesis aperture heat antenna feeder system suitable for large posture changes
CN204375965U (en) * 2015-01-14 2015-06-03 合肥正弦波无线技术有限公司 The signal distributor of a kind of degree of amplitude modulation and phase place
CN105024174A (en) * 2014-04-15 2015-11-04 波音公司 Configurable antenna assembly

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7619562B2 (en) * 2002-09-30 2009-11-17 Nanosys, Inc. Phased array systems
US7855691B2 (en) * 2008-08-07 2010-12-21 Toyota Motor Engineering & Manufacturing North America, Inc. Automotive radar using a metamaterial lens
US9362492B2 (en) * 2014-08-25 2016-06-07 Qualcomm Switch Corp. Integrated phase change switch

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5027127A (en) * 1985-10-10 1991-06-25 United Technologies Corporation Phase alignment of electronically scanned antenna arrays
CN103975483A (en) * 2011-09-27 2014-08-06 默克专利股份有限公司 Electronically steerable planar phased array antenna
CN103022729A (en) * 2012-12-27 2013-04-03 北京航天福道高技术股份有限公司 Method for designing planar phase-control and reflective array antenna
CN105024174A (en) * 2014-04-15 2015-11-04 波音公司 Configurable antenna assembly
CN104466351A (en) * 2014-11-06 2015-03-25 中国运载火箭技术研究院 Synthesis aperture heat antenna feeder system suitable for large posture changes
CN204375965U (en) * 2015-01-14 2015-06-03 合肥正弦波无线技术有限公司 The signal distributor of a kind of degree of amplitude modulation and phase place

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111510546A (en) * 2020-04-24 2020-08-07 Oppo广东移动通信有限公司 Terminal
CN111628269A (en) * 2020-06-22 2020-09-04 福耀玻璃工业集团股份有限公司 Frequency-adjustable antenna, manufacturing method and antenna device

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