CN109065467B - Wafer defect detection system and method and computer storage medium - Google Patents

Wafer defect detection system and method and computer storage medium Download PDF

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Publication number
CN109065467B
CN109065467B CN201811014892.5A CN201811014892A CN109065467B CN 109065467 B CN109065467 B CN 109065467B CN 201811014892 A CN201811014892 A CN 201811014892A CN 109065467 B CN109065467 B CN 109065467B
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defects
value
wafer
defect
chain
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CN109065467A (en
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胡向华
何广智
顾晓芳
倪棋梁
龙吟
陈宏璘
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Shanghai Huali Microelectronics Corp
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Shanghai Huali Microelectronics Corp
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • GPHYSICS
    • G06COMPUTING; CALCULATING; COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00Image analysis
    • G06T7/0002Inspection of images, e.g. flaw detection
    • G06T7/0004Industrial image inspection
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

Abstract

The invention provides a wafer defect detection system, a detection method and a computer storage medium, wherein the wafer defect detection method comprises the following steps: establishing a grid coordinate system on a wafer defect scanning system to scan and obtain each defect on the surface of the wafer and the coordinate of each defect in the grid coordinate system; screening out a first type of defects from the defects according to the coordinates of the defects in the grid coordinate system; screening out a second type of defect from all the first type of defects; presetting the number of defects forming each chain type defect, and screening the chain type defects from all the second type defects according to the number of the defects; and outputting the diagnosis result of the chain defects according to the screened number of the chain defects. The technical scheme of the invention can effectively detect and screen the chain defects on the wafer so as to realize effective specification control of the chain defects.

Description

Wafer defect detection system and method and computer storage medium
Technical Field
The invention relates to the field of semiconductor technology manufacturing, in particular to a wafer defect detection system and method and a computer storage medium.
Background
In the manufacturing process of semiconductor integrated circuits, defect detection has become an important means for improving yield. At present, defect scanning in the industry generally adopts a total count (total count), an incremental count (add count) and a repeat count (repeat count), and a rough classification (rough bin) classified by self-classification software of a machine (automatic classification based on pixel size, shape and size and the like) to control defects, and such conventional defects as the random appearance of defect positions on a wafer can be subjected to specification setting through such conventional methods to realize defect detection of a system. However, defects with a special profile (special map), such as chain defects, have a higher level (level) in handling. Although the chain defect with the special distribution map (special map) can be scanned by the machine, because the chain defect is not defined and mixed with the conventional defect, the specification cannot be set independently to judge whether the chain defect exceeds the specification (out of spec), therefore, if the chain defect is detected by the conventional method such as the total count (total count) and the like, the total count obtained by adding the conventional defect and the chain defect still cannot reach the standard of early warning, and the chain defect cannot be detected and alarmed. At present, no relevant and targeted means exists for self-detection of chain defects, and particularly, the chain defects cannot be effectively and accurately detected under the condition of more conventional defects.
Therefore, a wafer defect detecting system and a detecting method for chain defects and a computer storage medium are needed to effectively detect the chain defects.
Disclosure of Invention
The invention aims to provide a wafer defect detection system, a wafer defect detection method and a computer storage medium, so as to effectively detect chain defects and further effectively control the chain defects.
In order to achieve the above object, the present invention provides a wafer defect detection method, comprising:
establishing a grid coordinate system on a wafer defect scanning system, and defining a coordinate origin of the grid coordinate system;
scanning the surface of a wafer to be detected through the wafer defect scanning system to obtain each defect on the surface of the wafer and the coordinate of each defect in the grid coordinate system;
screening out adjacent defects from the defects according to the coordinates of the defects in the grid coordinate system, and defining the adjacent defects as first type defects;
screening continuous adjacent defects from all the first type of defects, and defining the continuous adjacent defects as second type of defects; and the number of the first and second groups,
presetting the number of defects forming each chain defect, and screening the chain defects from all the second defects according to the number of the defects.
Optionally, the step of screening out the first type of defect includes: traversing all the defects on the surface of the wafer scanned by the wafer defect scanning system, and calculating the distance value S between any 2 defectsx(ii) a And calculating each of the distance values SxComparing the measured value with a set first specification value Spec1 when the distance value S isxThe distance value S is less than the first specification value Spec1xThe corresponding 2 defects are the first type of defects.
Optionally, the step of screening out the second type of defect includes: traversing all of the distance values SxCalculating any 2 of the distance values SxDeviation value D therebetweenx(ii) a And calculating each deviation value DxWhen the deviation value D is compared with a set second specification value Spec2xWhen the deviation value is less than the second specification value Spec2, the deviation value DxThe corresponding 3 defects are the second type of defects.
Optionally, the step of screening out the chain defect includes: defining the number of the defects as m, connecting any m of the second defects in sequence, and enabling any two obtained connecting lines not to intersect to obtain m-2 line clip angle values Ax(ii) a And, fitting the m-2 cleat angle values AxWhen comparing the m-2 cleat angle values A with a set range value Spec3 of a third specificationxThe m-2 cleat angle values A all meet the range value Spec3 of the third specificationxThe corresponding m defects of the second type constitute the chain defects.
Optionally, the third specification has a Spec3 value in the range of 175 ° to 185 °.
Optionally, the method further comprises outputting a diagnosis result of the chain defects according to the screened number of the chain defects.
The invention also provides a computer storage medium on which a computer program is stored, wherein the computer program is executed by a processor to realize the wafer defect detection method.
The invention also provides a wafer defect detection system, comprising:
the system comprises a coordinate acquisition unit, a coordinate detection unit and a control unit, wherein the coordinate acquisition unit is used for establishing connection with a wafer defect scanning system so as to establish a grid coordinate system on the wafer defect scanning system, define a coordinate origin of the grid coordinate system, and acquire each defect on the surface of a wafer to be detected scanned by the wafer defect scanning system and a coordinate of each defect in the grid coordinate system;
the first screening unit is used for screening adjacent defects from the defects on the surface of the wafer according to the coordinates of the defects on the surface of the wafer in the grid coordinate system, which are obtained by the coordinate obtaining unit, and defining the screened adjacent defects as first-type defects;
the second screening unit is used for screening continuous adjacent defects from all the first defects on the surface of the wafer obtained by the first screening unit and defining the screened continuous adjacent defects as second defects; and the number of the first and second groups,
and the third screening unit is used for presetting the number of defects forming each chain defect and screening the chain defects from all the second defects on the surface of the wafer obtained by the second screening unit according to the number of the defects.
Optionally, the first screening unit includes: a distance calculation module for traversing all the defects on the wafer surface scanned by the wafer defect scanning system and calculating the distance value S between any 2 defectsx(ii) a And a first comparing module for comparing each of the distance values S calculated by the distance calculating modulexComparing with a set first specification value Spec1, and determining the distance value SxIf the value is less than the first Spec1, the distance value S is setxCorresponding 2 defectsTraps are defined as said first type of defects.
Optionally, the second screening unit includes: a distance deviation calculation module for traversing all the distance values S calculated by the distance calculation modulexCalculating any 2 of the distance values SxDeviation value D therebetweenx(ii) a And the second comparison module is used for comparing the deviation value DxComparing with a set second specification value Spec2, and determining the deviation value DxWhen the deviation value is less than the second specification value Spec2, the deviation value D isxThe corresponding 3 defects are defined as said second type of defects.
Optionally, the third screening unit includes: the defect number setting module is used for presetting the number m of the defects forming each chain type defect; a line included angle module for traversing all the second defects of the wafer obtained by the second comparison module, sequentially connecting any m second defects and obtaining any two non-crossed connecting lines to obtain m-2 line included angle values Ax(ii) a And the third comparison module is used for comparing the m-2 wire clip angle values A obtained by the wire connection angle modulexComparing with a range value Spec3 of a set third specification, and obtaining the m-2 wire clip angle values AxWhen the values of the m-2 wire clip angles A meet the range value Spec3 of the third specificationxThe corresponding m defects of the second type are defined as the chain defects.
Optionally, the third specification has a Spec3 value in the range of 175 ° to 185 °.
Optionally, the screening device further comprises an output unit, configured to output a diagnosis result of the chain defects according to the number of the chain defects screened by the third screening unit.
Compared with the prior art, the wafer defect detection system, the wafer defect detection method and the computer storage medium provided by the invention have the advantages that the first type of defects (namely, adjacent defects), the second type of defects (namely, continuous adjacent defects) and the chain defects are scanned by the wafer defect scanning system, so that the chain defects are effectively detected and screened; and meanwhile, defining the specification of the chain type defect so as to realize effective specification management and control of the chain type defect.
Drawings
FIG. 1 is a flowchart illustrating a wafer defect detection method according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of 4 defects under a grid coordinate system in the wafer defect inspection method according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of the line angles generated after the 4 defects shown in FIG. 2 are connected in sequence;
FIG. 4 is a system diagram of a wafer defect detection system according to an embodiment of the present invention;
fig. 5a and 5b are schematic diagrams illustrating the effect of the wafer defect detecting system according to an embodiment of the invention.
Wherein the reference numerals of figures 1 to 5b are as follows:
P1-P14-defects; s1~S3-a distance value; d1、D2-a deviation value; a. the1、A2-a cleat angle value; 1-wafer defect detection system; 2-wafer defect scanning system; 3-a wafer; 11-a coordinate acquisition unit; 12-a first screening unit; 13-a second screening unit; 14-a third screening unit; 15-an output unit; 121-distance calculation module; 122-a first comparison module; 131-a distance deviation calculation module; 132-a second comparison module; 141-defect number setting module; 142-line included angle module; 143-third comparing module.
Detailed Description
To make the objects, advantages and features of the present invention more clear, the wafer defect inspection system, the wafer defect inspection method and the computer storage medium according to the present invention will be described in detail with reference to fig. 1 to 5 b. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
An embodiment of the present invention provides a wafer defect detection method, and referring to fig. 1, fig. 1 is a flowchart of a wafer defect detection method according to an embodiment of the present invention, where the wafer defect detection method includes:
step S1-A, establishing a grid coordinate system on a wafer defect scanning system, and defining the origin of coordinates of the grid coordinate system;
step S1-B, scanning the surface of a wafer to be detected through the wafer defect scanning system to obtain each defect on the surface of the wafer and the coordinates of each defect in the grid coordinate system;
S1-C, screening out adjacent defects from the defects according to the coordinates of the defects in the grid coordinate system, and defining the adjacent defects as first type of defects;
S1-D, screening continuous adjacent defects from all the first type of defects, and defining the adjacent defects as second type of defects;
S1-E, presetting the number of defects forming each chain type defect, and screening the chain type defects from all the second type defects according to the number of the defects;
and step S1-F, outputting the diagnosis result of the chain defects according to the screened number of the chain defects.
The wafer defect inspection method provided in the present embodiment is described in more detail with reference to fig. 2 and 3. Fig. 2 is a schematic diagram of 4 defects in a grid coordinate system in a wafer defect detection method according to an embodiment of the present invention, and fig. 3 is a schematic diagram of line angles generated after the 4 defects shown in fig. 2 are connected in sequence.
First, referring to fig. 2, according to step S1-a, a grid coordinate system is established on a wafer defect scanning system, and the origin of coordinates of the grid coordinate system is defined. As can be seen from fig. 2, the origin of coordinates (0,0) of the grid coordinate system may be the center of the wafer, the length and width of each grid in the grid coordinate system may be set to be 1 unit length, and the actual size of the 1 unit length may be 1 or several pixels at the highest resolution of the wafer defect scanning system.
Then, referring to fig. 2, according to step S1-B, a wafer surface to be detected is scanned by the wafer defect scanning system to obtain each defect on the wafer surface and coordinates of each defect in the grid coordinate system. The defects all have corresponding coordinates in the grid coordinate system. If the wafer defect scanning system scans 4 point defects (i.e. the shape and size meet the definition requirement of the point defect) at this time, which are respectively labeled as P1, P2, P3 and P4, since the length and width of each grid are set to be 1 unit length, the coordinates of the point defects P1, P2, P3 and P4 are (-4,1), (-2,3), (-1,4) and (1,6), respectively.
Then, referring to fig. 2, according to step S1-C, adjacent defects are screened from the defects according to the coordinates of the defects in the grid coordinate system, and defined as defects of the first type. The step of screening out the first type of defects comprises: traversing all the defects on the surface of the wafer scanned by the wafer defect scanning system, and calculating the distance value S between any 2 defectsx(ii) a And calculating each of the distance values SxComparing the measured value with a set first specification value Spec1 when the distance value S isxThe distance value S is less than the first specification value Spec1xThe corresponding 2 defects are very close together, even close together and have partial edge regions overlapping, and the two defects are the first type of defects. Wherein, when the coordinates of the 2 defects are (a1, b1) and (a2, b2), respectively, the distance value Sx=((a2-a1)2+(b2-b1)2)1/2. As can be seen from FIG. 2, if there are 4 defects scanned on the wafer surface, the 4 defects are P1, P2, P3 and P4, and the coordinates of the 4 defects are (-4,1), (-2,3), (-1,4) and (1,6), then the distance value S is calculatedxCalculating the distance value S between the defects P1 and P21Is composed ofThe distance value S between the defects P2 and P321, the distance value S between the defects P3 and P43Is composed ofWhen the first specification value Spec1 is set to 3, the distance value S1、S2And S3Are all smallAt the first specification value Spec1, then the distance value S1The corresponding defects P1 and P2, distance value S2The corresponding defects P2 and P3, and a distance value S3The corresponding defects P3 and P4 are all adjacent defects, namely point defects P1, P2, P3 and P4 are all screened as the first type of defects.
Then, referring to FIG. 2, successive adjacent defects, defined as defects of the second type, are screened from all of said defects of the first type, according to step S1-D. The step of screening out the second type of defects comprises the following steps: traversing all of the distance values SxCalculating any 2 of the distance values SxDeviation value D therebetweenx(ii) a And calculating each deviation value DxWhen the deviation value D is compared with a set second specification value Spec2xWhen the deviation value is less than the second specification value Spec2, the deviation value DxThe corresponding 3 defects are continuously adjacent, the three defects are even close together in sequence, and the edge areas of two adjacent defects are overlapped partially, and the three defects are the second type of defects. As can be seen from fig. 2, the distance value S1And S2The deviation value D therebetween1Is composed ofThe distance value S2And S3The deviation value D therebetween2Is composed ofComparing and analyzing the deviation value D when the set second specification value Spec2 is 21And D2The magnitude of the second specification value Spec2, the result being that the deviation value D is displayed1And D2Are all less than the second specification value Spec2, the deviation value D is1The corresponding defects P1, P2 and P3 and the deviation value D2The corresponding defects P2, P3 and P4 are all continuously adjacent, i.e., the defects P1, P2, P3 and P4 are all screened as the second type of defect.
Then, referring to FIGS. 2 and 3, each of the components is preset according to step S1-EAnd screening the chain defects from all the second defects according to the number of the defects of the chain defects. The step of screening out the chain defects comprises the following steps: defining the number of the defects as m, connecting any m of the second defects in sequence, and enabling any two obtained connecting lines not to intersect to obtain m-2 line clip angle values Ax(ii) a And, fitting the m-2 cleat angle values AxWhen comparing the m-2 cleat angle values A with a set range value Spec3 of a third specificationxThe m-2 cleat angle values A all meet the range value Spec3 of the third specificationxThe corresponding m defects of the second type constitute the chain defects. Wherein the Spec3 range value of the third specification is 175-185 ° (for example, 178 °, 180 °, 182 °, etc.). As can be seen from FIGS. 2 and 3, when the minimum number m of defects that can constitute chain defects is set to 3, the defects P1, P2, and P3 are sequentially connected to obtain a cleat angle value A1Connecting P2, P3 and P4 in sequence can obtain another wire clip angle value A2And the cleat angle value A1And A2Are all 180 degrees, and the wire clip angle value A is compared and analyzed1And A2The results show the cleat angle value A in comparison with the Spec3 range value (i.e., 175-185) of the third specification1And A2The value Spec3 of the range complying with the third specification, the 2 cleat angle values A1And A2The corresponding 4 defects P1, P2, P3 and P4 constitute the chain defect. When the minimum number m of defects capable of forming chain defects is set to 4, the defects P1, P2, P3 and P4 are sequentially connected to obtain a cleat angle value A1Value A2And the cleat angle value A1And A2Are all 180 DEG, all fall within the range of 175 DEG to 185 DEG, i.e. meet the specification of the value Spec3 of the range of the third specification, 4 defects P1, P2, P3 and P4 constitute the chain defects.
Finally, according to step S1-F, the diagnosis result of the chain defects is output according to the number of the screened chain defects. The diagnosis result of the chain defects output can be OK information or NG information, when the number of the screened chain defects is less than the defined defect number m, the diagnosis result output is OK information, the OK information can be in a form of directly displaying 'OK' in a judgment field of a test item, and opposite to the OK information, when the number of the screened chain defects is more than or equal to the defined defect number m, the diagnosis result output is NG information, and the NG information is in a form of directly displaying 'NG' in the judgment field of the test item; of course, the OK information and the NG information may be in other forms, for example, the form of the OK information may be a form in which the font of the test data is kept in an originally set color (for example, black), and the form of the NG information corresponding thereto is to change the font of the test data into red; for example, the form of the OK information is a form of highlighting each defect constituting the chain defect in the grid coordinate system, and the NG information corresponding to the OK information is a pop-up alarm prompt box in the detection system; for another example, the OK information and the NG information corresponding thereto both take the form of an output detection report.
In summary, the wafer defect detection method provided by the present invention includes: establishing a grid coordinate system on a wafer defect scanning system, and scanning the surface of a wafer to be detected through the wafer defect scanning system to obtain each defect on the surface of the wafer and the coordinate of each defect in the grid coordinate system; screening out a first type of defects from the defects according to the coordinates of the defects in the grid coordinate system; screening out a second type of defect from all the first type of defects; presetting the number of defects forming each chain type defect, and screening the chain type defects from all the second type defects according to the number of the defects; and outputting the diagnosis result of the chain defects according to the number of the screened chain defects, so that the chain defects on the wafer can be effectively detected and screened, and the effective specification management and control of the chain defects are realized.
An embodiment of the present invention provides a computer storage medium, on which a computer program is stored, wherein the computer program, when executed by a processor, implements the wafer defect detecting method described in steps S1-a to S1-F. The computer storage medium of the invention can be directly embedded and installed in the wafer defect scanning system so as to upgrade the original wafer defect scanning system and enable the original wafer defect scanning system to have the function of detecting chain defects. When the computer program in the computer storage medium is executed by the processor, the chain defects on the wafer can be effectively detected and screened, so that the effective specification management and control of the chain defects are realized.
Referring to fig. 4, fig. 4 is a system block diagram of a wafer defect inspection system according to an embodiment of the present invention, where the wafer defect inspection system 1 includes a coordinate acquisition unit 11, a first screening unit 12, a second screening unit 13, a third screening unit 14, and an output unit 15. The wafer defect detection system 1 is described in detail below:
the coordinate acquiring unit 11 is configured to establish a connection with a wafer defect scanning system 2, so as to establish a grid coordinate system on the wafer defect scanning system 2 and define a coordinate origin of the grid coordinate system, and acquire each defect on the surface of a wafer 3 to be detected, which is scanned by the wafer defect scanning system 2, and a coordinate of each defect in the grid coordinate system. For example, refer to the above step S1-A and step S1-B, which are not described herein again.
The first screening unit 12 is configured to screen adjacent defects from the defects on the surface of the wafer 3 according to the coordinates of the defects on the surface of the wafer 3 in the grid coordinate system, which are obtained by the coordinate obtaining unit 11, and define the screened adjacent defects as first-type defects. The first screening unit 12 includes: a distance calculating module 121, configured to traverse all the defects on the surface of the wafer 3 scanned by the wafer defect scanning system 2, and calculate a distance value S between any 2 of the defectsx(ii) a And a first comparing module 122, configured to compare each of the distance values S calculated by the distance calculating module 121xComparing with a set first specification value Spec1, and determining the distance value SxLess than the first Spec value1, the distance value SxThe corresponding 2 defects are defined as said first type of defects. For example, refer to the step S1-C, which is not described herein again.
The second screening unit 13 is configured to screen consecutive adjacent defects from all the first type defects on the surface of the wafer 3 obtained by the first screening unit 12, and define the screened consecutive adjacent defects as second type defects. The second screening unit 13 includes: a distance deviation calculation module 131 for traversing all the distance values S calculated by the distance calculation module 121xCalculating any 2 of the distance values SxDeviation value D therebetweenx(ii) a And a second comparing module 132 for comparing the deviation value DxComparing with a set second specification value Spec2, and determining the deviation value DxWhen the deviation value is less than the second specification value Spec2, the deviation value D isxThe corresponding 3 defects are defined as said second type of defects. For example, refer to the above step S1-D, which is not described herein again.
The third screening unit 14 is configured to preset the number of defects constituting each chain defect, and screen the chain defects from all the second type of defects on the surface of the wafer 3 obtained by the second screening unit 13 according to the number of defects. The third screening unit 14 includes: a defect number setting module 141 configured to set in advance the number m of defects constituting each of the chain defects; a line-connection angle module 142, configured to traverse all the second defects of the wafer 3 obtained by the second comparison module 132, sequentially connect any m second defects, and obtain any two non-intersecting connection lines, so as to obtain m-2 line-clip angle values ax(ii) a And a third comparing module 143, configured to compare the m-2 wire included angle values a obtained by the wire included angle module 142xComparing with a range value Spec3 of a set third specification, and obtaining the m-2 wire clip angle values AxWhen the values of the m-2 wire clip angles A meet the range value Spec3 of the third specificationxThe corresponding m defects of the second type are defined as the chain defects. Wherein the range value Spec3 of the third specification is175 to 185 ° (for example, 178 °, 180 °, 182 °, etc.). For example, refer to the above step S1-E, which is not described herein again.
The output unit 15 is configured to output the diagnosis result of the chain defects according to the number of the chain defects screened by the third screening unit 14, where the output diagnosis result of the chain defects may be OK information or NG information. The decision principle and content of outputting the OK information or NG information are already described in step S1-F, and are not described herein again.
Referring to fig. 5a and 5b, fig. 5a and 5b are schematic views illustrating the effect of a wafer defect detecting system according to an embodiment of the present invention, and as can be seen from fig. 5a and 5b, the wafer defect scanning system detects all the position random normal defects and the chain defects with a special distribution pattern on the wafer. When the chain defect includes the chain defect L1 formed by the defects P5, P6, P7 and P8 and the chain defect L2 formed by the defects P9, P10, P1, P12, P13 and P14, and the number m of the defects forming the chain defect is set to be 5, then after the wafer defect inspection system performs inspection, only 6 defects P9 to P14 included in the chain defect L2 whose number of defects is greater than 5 are finally displayed on the wafer defect inspection system. Therefore, the wafer defect detection system can eliminate the interference of the conventional defects and the chain defects which do not exceed the set defect number, so as to realize the detection of the chain defects exceeding the specification, and further realize the specification control of the chain defects.
In addition, it should be noted that the wafer defect detecting system of the present invention may be an independent device independent from the wafer defect scanning system, or may be integrated with the wafer defect scanning system, and the wafer defect detecting system and the wafer defect scanning system are respectively a component of the same device.
In summary, the wafer defect detecting system provided by the present invention includes a coordinate obtaining unit for obtaining a defect coordinate, a first screening unit for screening near defects, a second screening unit for screening consecutive near defects, a third screening unit for screening chained defects, and an output unit for outputting a screening result, and can effectively detect and screen the chained defects on the wafer, so as to achieve effective specification control of the chained defects.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.

Claims (7)

1. A wafer defect detection method, comprising:
establishing a grid coordinate system on a wafer defect scanning system, and defining a coordinate origin of the grid coordinate system;
scanning the surface of a wafer to be detected through the wafer defect scanning system to obtain each defect on the surface of the wafer and the coordinate of each defect in the grid coordinate system;
screening out adjacent defects from the defects according to the coordinates of the defects in the grid coordinate system, and defining the adjacent defects as first type defects; the step of screening out the first type of defects comprises: traversing all the defects on the surface of the wafer scanned by the wafer defect scanning system, and calculating the distance value S between any 2 defectsxAnd, calculating each of said distance values SxComparing the measured value with a set first specification value Spec1 when the distance value S isxThe distance value S is less than the first specification value Spec1xThe corresponding 2 defects are the first type of defects;
screening continuous adjacent defects from all the first type of defects, and defining the continuous adjacent defects as second type of defects; the step of screening out the second type of defects comprises the following steps: traversing all of the distance values SxCalculating any 2 of the distance values SxDeviation value D therebetweenxAnd, calculating each of the deviation values DxAnd a set second specification value Spec2 comparison, when the deviation value DxWhen the deviation value is less than the second specification value Spec2, the deviation value DxThe corresponding 3 defects are the second type of defects; and the number of the first and second groups,
presetting the number of defects forming each chain defect, and screening the chain defects from all the second defects according to the number of the defects; the step of screening out the chain defects comprises the following steps: defining the number of the defects as m, connecting any m of the second defects in sequence, and enabling any two obtained connecting lines not to intersect to obtain m-2 line clip angle values AxAnd, fitting said m-2 cleat angle values AxWhen comparing the m-2 cleat angle values A with a set range value Spec3 of a third specificationxThe m-2 cleat angle values A all meet the range value Spec3 of the third specificationxThe corresponding m defects of the second type constitute the chain defects.
2. The wafer defect inspection method as claimed in claim 1, wherein the Spec3 of the third specification is in a range of 175 ° to 185 °.
3. The wafer defect detection method of claim 1, further comprising outputting a diagnosis result of the chain defects according to the number of the screened chain defects.
4. A computer storage medium having a computer program stored thereon, wherein the computer program, when executed by a processor, implements the wafer defect detection method of any of claims 1 to 3.
5. A wafer defect detection system, comprising:
the system comprises a coordinate acquisition unit, a coordinate detection unit and a control unit, wherein the coordinate acquisition unit is used for establishing connection with a wafer defect scanning system so as to establish a grid coordinate system on the wafer defect scanning system, define a coordinate origin of the grid coordinate system, and acquire each defect on the surface of a wafer to be detected scanned by the wafer defect scanning system and a coordinate of each defect in the grid coordinate system;
the first screening unit is used for screening adjacent defects from the defects on the surface of the wafer according to the coordinates of the defects on the surface of the wafer in the grid coordinate system, which are obtained by the coordinate obtaining unit, and defining the screened adjacent defects as first-type defects; wherein the first screening unit includes: a distance calculation module for traversing all the defects on the wafer surface scanned by the wafer defect scanning system and calculating the distance value S between any 2 defectsx(ii) a And a first comparing module for comparing each of the distance values S calculated by the distance calculating modulexComparing with a set first specification value Spec1, and determining the distance value SxIf the value is less than the first Spec1, the distance value S is setxThe corresponding 2 defects are defined as the first type of defects;
the second screening unit is used for screening continuous adjacent defects from all the first defects on the surface of the wafer obtained by the first screening unit and defining the screened continuous adjacent defects as second defects; wherein the second screening unit includes: a distance deviation calculation module for traversing all the distance values S calculated by the distance calculation modulexCalculating any 2 of the distance values SxDeviation value D therebetweenx(ii) a And the second comparison module is used for comparing the deviation value DxComparing with a set second specification value Spec2, and determining the deviation value DxWhen the deviation value is less than the second specification value Spec2, the deviation value D isxThe corresponding 3 defects are defined as the second type of defects; and the number of the first and second groups,
the third screening unit is used for presetting the number of defects forming each chain type defect and screening the chain type defects from all the second type defects on the surface of the wafer obtained by the second screening unit according to the number of the defects; wherein the third screening unit includes: a defect number setting module for presetting each of the componentsThe number m of the chain defects is larger than the number m of the chain defects; a line included angle module for traversing all the second defects of the wafer obtained by the second comparison module, sequentially connecting any m second defects and obtaining any two non-crossed connecting lines to obtain m-2 line included angle values Ax(ii) a And the third comparison module is used for comparing the m-2 wire clip angle values A obtained by the wire connection angle modulexComparing with a range value Spec3 of a set third specification, and obtaining the m-2 wire clip angle values AxWhen the values of the m-2 wire clip angles A meet the range value Spec3 of the third specificationxThe corresponding m defects of the second type are defined as the chain defects.
6. The wafer defect inspection system of claim 5, wherein the Spec3 range value is 175-185 °.
7. The wafer defect detecting system according to claim 5 or 6, further comprising an output unit for outputting a diagnosis result of the chain defects according to the number of the chain defects screened by the third screening unit.
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