CN109065467A - Wafer defect detection system and detection method and computer storage medium - Google Patents
Wafer defect detection system and detection method and computer storage medium Download PDFInfo
- Publication number
- CN109065467A CN109065467A CN201811014892.5A CN201811014892A CN109065467A CN 109065467 A CN109065467 A CN 109065467A CN 201811014892 A CN201811014892 A CN 201811014892A CN 109065467 A CN109065467 A CN 109065467A
- Authority
- CN
- China
- Prior art keywords
- defect
- value
- wafer
- chain type
- coordinate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001514 detection method Methods 0.000 title claims abstract description 61
- 238000003860 storage Methods 0.000 title claims abstract description 12
- 238000001914 filtration Methods 0.000 claims description 21
- 101710007936 Spec2 Proteins 0.000 claims description 15
- 238000004364 calculation method Methods 0.000 claims description 10
- 238000004590 computer program Methods 0.000 claims description 6
- 238000003745 diagnosis Methods 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N carbon Chemical compound data:image/svg+xml;base64,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 data:image/svg+xml;base64,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 [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 230000000875 corresponding Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 238000009826 distribution Methods 0.000 description 3
- 235000013399 edible fruits Nutrition 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006011 modification reaction Methods 0.000 description 1
- 230000001737 promoting Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING; COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/0002—Inspection of images, e.g. flaw detection
- G06T7/0004—Industrial image inspection
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
Abstract
The present invention provides a kind of wafer defect detection system and detection methods and computer storage medium, the wafer defect detection method includes: to establish grid coordinate system in wafer defect scanning system, to scan the coordinate for obtaining each defect and each defect on the crystal column surface in the grid coordinate system；First kind defect is filtered out from each defect in the coordinate in the grid coordinate system according to each defect；The second class defect is filtered out from all first kind defects；The defect number for constituting each chain type defect is preset, chain type defect is filtered out from all the second class defects according to the defect number；And the diagnostic result of the chain type defect is exported according to the quantity of the chain type defect filtered out.Technical solution of the present invention can effectively detect the chain type defect on the wafer, be screened, to realize that the effective specification to the chain type defect is managed.
Description
Technical field
The present invention relates to semiconductor technology manufacturing field, in particular to a kind of wafer defect detection system and detection method and
Computer storage medium.
Background technique
In the manufacturing process of semiconductor integrated circuit, defects detection has become an important means for promoting yield.
Defect Scanning generallys use tale (total count), incremental count (add count), repeat count in the industry at present
The mode of (repeat count), and utilize the (automatic based on pixel size, geomery etc. from classification software classification of board
Classification) mode of rough classification (rough bin) that goes out carries out defect control, as defective locations occur at random on wafer
This normal defect can carry out the defects detection that system is realized in specification setting by these types of usual manner.But as chain type
This defect with special distribution map (special map) of defect will have higher standard (level) in disposition.Although
This chain type defect with special distribution map (special map) can be scanned by board to be come, but due to fixed not to it
Justice and mix with normal defect, would not individually set specification goes to judge whether it exceeds specification (out of spec), because
This is just easy to if going to detect by usual manners such as existing tales (total count) so that normal defect and chain type
Defect be added together after tale again without reaching the standard of early warning, and then lead to not this chain type defects detection simultaneously
Alarm (alarm) comes out.Currently, the self-test for being directed to chain type defect especially exists there are no relevant, targeted means
In the case that normal defect is more, chain type defect can not effectively and accurately be detected.
It stores and is situated between therefore, it is necessary to a kind of wafer defect detection system and detection method and computer for chain type defect
Matter, effectively to detect chain type defect.
Summary of the invention
The purpose of the present invention is to provide a kind of wafer defect detection system and detection method and computer storage medium, with
Chain type defect is effectively detected, and then effectively control is realized to chain type defect.
To achieve the above object, the present invention provides a kind of wafer defect detection methods, comprising:
Grid coordinate system is established in a wafer defect scanning system, and defines the coordinate origin of the grid coordinate system；
A crystal column surface to be detected is scanned by the wafer defect scanning system, to obtain on the crystal column surface
The coordinate of each defect and each defect in the grid coordinate system；
According to each defect the coordinate in the grid coordinate system filtered out from each defect close on it is scarce
It falls into, is defined as first kind defect；
It is filtered out from all first kind defects and continuously closes on defect, be defined as the second class defect；And
The defect number for constituting each chain type defect is preset, according to the defect number from all described
Chain type defect is filtered out in two class defects.
Optionally, the step of filtering out the first kind defect includes: that the traversal wafer defect scanning system scans
The crystal column surface on all defects, calculate the distance between any 2 defects value Sx；And it will count
Each the described distance value S calculatedxCompared with the first specification value Spec1 of a setting, as the distance value SxLess than described
When one specification value Spec1, the distance value SxCorresponding 2 defects are the first kind defect.
Optionally, the step of filtering out the second class defect includes: all distance value S of traversalx, calculating takes the post as
Anticipate 2 distance value SxBetween deviation Dx；And by each calculated described deviation DxWith the of a setting
Two specification value Spec2 compare, as the deviation DxWhen less than the second specification value Spec2, the deviation DxCorresponding 3
A defect is the second class defect.
Optionally, the step of filtering out the chain type defect includes: to define the defect number for m, described in all
Any m in second class defect connecting line any two for being sequentially connected with and obtaining are not intersected, to obtain m-2 wire clamp angle value
Ax；And by the m-2 wire clamp angle value AxCompared with the value range Spec3 of the third specification of a setting, when the m-2 line
Angle value AxWhen meeting the value range Spec3 of the third specification, the m-2 wire clamp angle value AxCorresponding m described second
Class defect constitutes the chain type defect.
Optionally, the value range Spec3 of the third specification is 175 °~185 °.
It optionally, further include the diagnosis knot that the chain type defect is exported according to the quantity of the chain type defect filtered out
Fruit.
The present invention also provides a kind of computer storage mediums, are stored thereon with computer program, the computer program
Wafer defect detection method of the present invention is realized when being executed by processor.
The present invention also provides a kind of wafer defect detection systems, comprising:
Coordinate acquiring unit, for establishing connection with a wafer defect scanning system, to scan system in the wafer defect
Grid coordinate system is established on system and defines the coordinate origin of the grid coordinate system, and obtains wafer defect scanning system
The each defect on the crystal column surface to be detected that scans of uniting and each defect are in the grid coordinate system
Coordinate；
First screening unit, each defect on the crystal column surface for being obtained according to the coordinate acquiring unit exist
Coordinate in the grid coordinate system filters out from each defect on the crystal column surface and closes on defect, and will filter out
Described close on defect and be defined as first kind defect；
Second screening unit, for from all described first on the crystal column surface that first screening unit obtains
Filtered out in class defect and continuously close on defect, and by filter out described continuously closing on defect is defined as the second class defect；
And
Third filtering unit is lacked for presetting the defect number for constituting each chain type defect, and according to described
It falls into number and filters out chain type from all second class defects on the crystal column surface that second screening unit obtains
Defect.
Optionally, first screening unit includes: distance calculation module, for traversing the wafer defect scanning system
All defects on the crystal column surface scanned calculate the distance between any 2 defects value Sx；With
And first comparison module, for by each calculated described distance value S of the distance calculation modulexWith the of a setting
One specification value Spec1 compares, and works as the distance value SxWhen less than the first specification value Spec1, by the distance value SxIt is corresponding
2 defects be defined as the first kind defect.
Optionally, second screening unit includes: range deviation computing module, for traversing the distance calculation module
Calculated all distance value Sx, calculate any 2 distance value SxBetween deviation Dx；And second compare
Module is used for the deviation DxCompared with the second specification value Spec2 of a setting, and work as the deviation DxLess than described
When the second specification value Spec2, by the deviation DxCorresponding 3 defects are defined as the second class defect.
Optionally, the third filtering unit includes: defects count setting module, each described for presetting composition
The defect number m of chain type defect；Binding clip Corner Block List Representation, it is all for traversing the wafer that second comparison module obtains
The second class defect, connecting line any two that any m the second class defects are sequentially connected with and are obtained are not intersected, with
Obtain m-2 wire clamp angle value Ax；And third comparison module, the m-2 line for obtaining the binding clip Corner Block List Representation
Angle value AxCompared with the value range Spec3 of the third specification of a setting, and work as the m-2 wire clamp angle value AxMeet described
When the value range Spec3 of third specification, by the m-2 wire clamp angle value AxCorresponding m the second class defects are defined as institute
State chain type defect.
Optionally, the value range Spec3 of the third specification is 175 °~185 °.
It optionally, further include output unit, the chain type defect for being filtered out according to the third filtering unit
Quantity exports the diagnostic result of the chain type defect.
Compared with prior art, wafer defect detection system and detection method provided by the invention and computer storage are situated between
Matter scans first kind defect (closing on defect) by wafer defect scanning system, the second class defect (is continuously closed on scarce
Fall into) and chain type defect, the chain type defect is effectively detected and be screened；Meanwhile the specification of chain type defect is carried out
Definition, to realize that the effective specification to the chain type defect is managed.
Detailed description of the invention
Fig. 1 is the flow chart of the wafer defect detection method of one embodiment of the invention；
Fig. 2 is the schematic diagram of lower 4 defects of the grid coordinate system in the wafer defect detection method of one embodiment of the invention；
Fig. 3 is the schematic diagram at each wire clamp angle generated after 4 defects shown in Fig. 2 are sequentially connected with；
Fig. 4 is the system block diagram of the wafer defect detection system of one embodiment of the invention；
Fig. 5 a and Fig. 5 b are the effect diagrams of the wafer defect detection system of one embodiment of the invention.
Wherein, the reference numerals are as follows by 1~5b of attached drawing:
P1~P14- defect；S1~S3Distance value；D1、D2Deviation；A1、A2Wire clamp angle value；1- wafer defect detection system
System；2- wafer defect scanning system；3- wafer；11- coordinate acquiring unit；The first screening unit of 12-；The second screening unit of 13-；
14- third filtering unit；15- output unit；121- distance calculation module；The first comparison module of 122-；131- range deviation meter
Calculate module；The second comparison module of 132-；141- defects count setting module；142- binding clip Corner Block List Representation；143- third compares mould
Block.
Specific embodiment
To keep the purpose of the present invention, advantages and features clearer, below in conjunction with 1~5b of attached drawing to crystalline substance proposed by the present invention
Circle defect detecting system and detection method and computer storage medium are described in further detail.It should be noted that attached drawing is adopted
With very simplified form and using non-accurate ratio, only to facilitate, lucidly aid in illustrating the embodiment of the present invention
Purpose.
One embodiment of the invention provides a kind of wafer defect detection method, and refering to fig. 1, Fig. 1 is one embodiment of the invention
The flow chart of wafer defect detection method, the wafer defect detection method include:
Step S1-A, grid coordinate system is established in a wafer defect scanning system, and defines the grid coordinate system
Coordinate origin；
Step S1-B, a crystal column surface to be detected is scanned by the wafer defect scanning system, to obtain the crystalline substance
The coordinate of each defect and each defect in the grid coordinate system on circular surfaces；
Step S1-C, it is screened from each defect according to each defect in the coordinate in the grid coordinate system
Defect is closed on out, is defined as first kind defect；
Step S1-D, it is filtered out from all first kind defects and continuously closes on defect, be defined as the second class and lack
It falls into；
Step S1-E, the defect number for constituting each chain type defect is preset, according to the defect number from institute
Chain type defect is filtered out in the second class defect having；
Step S1-F, the diagnostic result of the chain type defect is exported according to the quantity of the chain type defect filtered out.
Wafer defect detection method provided in this embodiment is introduced in more detail referring next to Fig. 2 and Fig. 3.Fig. 2 is this
The schematic diagram of lower 4 defects of grid coordinate system in the wafer defect detection method of an embodiment is invented, Fig. 3 is shown in Fig. 24
The schematic diagram at each wire clamp angle that a defect generates after being sequentially connected with.
Firstly, referring to Fig.2, establishing grid coordinate system in a wafer defect scanning system, and define according to step S1-A
The coordinate origin of the grid coordinate system.As can be seen from Figure 2, the coordinate origin (0,0) of the grid coordinate system can be institute
The center of wafer is stated, the length and wide size of each grid may be set to unit length 1, the list in the grid coordinate system
The actual size of bit length 1 can be the size of 1 or several pixels under the wafer defect scanning system highest resolution.
Then, referring to Fig.2, according to step S1-B, a wafer to be detected is scanned by the wafer defect scanning system
Surface, to obtain the coordinate of each defect and each defect in the grid coordinate system on the crystal column surface.
The defect has corresponding coordinate in grid coordinate system.If wafer defect scanning system this time scans 4 point defects
(i.e. shape and size meet point defect definition requirement), is respectively labeled as P1, P2, P3 and P4, due to the length of each grid
Be sized to unit length 1 with wide, then the coordinate of point defect P1, P2, P3 and P4 be respectively (- 4,1), (- 2,3),
(- 1,4) and (1,6).
Then, referring to Fig.2, according to step S1-C, according to coordinate of each defect in the grid coordinate system from
It is filtered out in each defect and closes on defect, be defined as first kind defect.The step of filtering out the first kind defect include:
All defects on the crystal column surface that the wafer defect scanning system scans are traversed, any 2 institutes are calculated
State the distance between defect value Sx；And by each calculated described distance value SxWith the first specification value of a setting
Spec1 compares, as the distance value SxWhen less than the first specification value Spec1, the distance value SxCorresponding 2 defects are non-
It often closes on, is even closely packed together and has part edge area coincidence, the two defects are the first kind defect.Its
In, when the coordinate of 2 defects is respectively (a1, b1) and (a2, b2), the distance value Sx=((a2-a1)2+(b2-
b1)2)1/2.As can be seen from Figure 2, the defect on the crystal column surface scanned totally 4,4 defects are respectively
P1, P2, P3 and P4, the coordinate of 4 defects are respectively (- 4,1), (- 2,3), (- Isosorbide-5-Nitrae) and (1,6), then according to calculating institute
State distance value SxFormula, calculate the distance between the defect P1 and P2 value S1ForBetween the defect P2 and P3 away from
From value S2It is 1, the distance between described defect P3 and P4 value S3ForWhen the first specification value Spec1 set is 3,
The distance value S1、S2And S3The both less than described first specification value Spec1, then distance value S1The corresponding defect P1 and P2,
Distance value S2The corresponding defect P2 and P3 and distance value S3The corresponding defect P3 and P4 is to close on defect, i.e. point
Defect P1, P2, P3 and P4 are screened as the first kind defect.
Then, referring to Fig.2, according to step S1-D, filtered out from all first kind defects continuously close on it is scarce
It falls into, is defined as the second class defect.The step of filtering out the second class defect includes: all distance value S of traversalx, meter
Calculate any 2 distance value SxBetween deviation Dx；And by each calculated described deviation DxIt is set with one
The second fixed specification value Spec2 compares, as the deviation DxWhen less than the second specification value Spec2, the deviation DxIt is right
3 defects answered are exactly continuously to close on, these three defects are even successively closely packed together and two neighboring defect has
Part edge area coincidence, these three defects are the second class defect.As can be seen from Figure 2, the distance value S1With S2It
Between the deviation D1ForThe distance value S2With S3Between the deviation D2ForWhen the institute of setting
When to state the second specification value Spec2 be 2, compare and analyze the deviation D1And D2With the size of the second specification value Spec2, knot
Fruit shows the deviation D1And D2The both less than described second specification value Spec2, then the deviation D1The corresponding defect
P1, P2 and P3 and the deviation D2Corresponding described defect P2, P3 and P4 continuously close on, i.e., described defect P1, P2,
P3 and P4 is screened as the second class defect.
Then, refering to Fig. 2 and Fig. 3, according to step S1-E, the defect for constituting each chain type defect is preset
Number, filters out chain type defect from all the second class defects according to the defect number.Filter out the chain type defect
The step of include: that define the defect number be m, by any m in all the second class defects be sequentially connected with and
To connecting line any two do not intersect, to obtain m-2 wire clamp angle value Ax；And by the m-2 wire clamp angle value AxWith one
The value range Spec3 of the third specification of setting compares, as the m-2 wire clamp angle value AxMeet the range of the third specification
When value Spec3, the m-2 wire clamp angle value AxCorresponding m the second class defects constitute the chain type defect.Wherein,
The value range Spec3 of the third specification is 175 °~185 ° (for example, 178 °, 180 °, 182 ° etc.).It can from Fig. 2 and Fig. 3
Out, when setting the least defect number m that can constitute chain type defect as 3, being sequentially connected with point defect is that P1, P2, P3 can be obtained
To a wire clamp angle value A1, it is sequentially connected with available another wire clamp angle value A of P2, P3, P42, and the wire clamp angle value A1With
A2All it is 180 °, compares and analyze the wire clamp angle value A1And A2With the value range Spec3 (i.e. 175 °~185 °) of the third specification
Size, the wire clamp angle value A as the result is shown1And A2Meet the value range Spec3 of third specification, therefore, 2 wire clamp angles
Value A1And A2Corresponding 4 defects P1, P2, P3 and P4 constitute the chain type defect.When setting can constitute the least of chain type defect
When defect number m is 4, being sequentially connected with point defect is the available wire clamp angle value A of P1, P2, P3, P41, value A2, and it is described
Wire clamp angle value A1And A2All it is 180 °, belongs in 175 °~185 °, that is, meets the rule of the value range Spec3 of the third specification
Fixed, 4 defects P1, P2, P3 and P4 just constitute the chain type defect.
Finally, exporting the chain type defect according to the quantity of the chain type defect filtered out according to step S1-F
Diagnostic result.The diagnostic result of the chain type defect of output can be OK information or NG information, when the chain type filtered out
When the quantity of defect is less than the defect number m of definition, the diagnostic result of output is OK information, the shape of the OK information
Formula, which can be, directly shows the form of " OK " in the judgement field of test item, and on the other side, when the chain filtered out
When the quantity of formula defect is greater than or equal to the defect number m of definition, the diagnostic result of output is NG information, the NG
Information is exactly directly to show the form of " NG " in the judgement field of test item；Certainly, the OK information and NG information can also be with
Other forms, for example, the OK information form can be by the font of test data keep original setting color (such as
Black) form, the form of corresponding NG information is exactly that the font of test data is become to red；For example described OK letter again
The form of breath is that the form for each defect for constituting the chain type defect is highlighted in the grid coordinate system, is corresponding to it
NG information be exactly in detection system to jump out warning note frame；For another example the OK information and corresponding NG information are adopted
With the form of output examining report.
In conclusion wafer defect detection method provided by the invention, comprising: established in a wafer defect scanning system
Grid coordinate system scans a crystal column surface to be detected by the wafer defect scanning system, to obtain the crystal column surface
On coordinate in the grid coordinate system of each defect and each defect；According to each defect in the net
Coordinate in lattice coordinate system filters out first kind defect from each defect；It is screened from all first kind defects
Second class defect out；The defect number for constituting each chain type defect is preset, according to the defect number from all
Chain type defect is filtered out in the second class defect；And it is exported according to the quantity of the chain type defect filtered out described
The diagnostic result of chain type defect, so as to effectively be detected, screened to the chain type defect on the wafer, with reality
Now the effective specification of the chain type defect is managed.
One embodiment of the invention provides a kind of computer storage medium, is stored thereon with computer program, the computer
Wafer defect detection method described in above step S1-A to step S1-F is realized when program is executed by processor.Meter of the invention
Calculation machine storage medium, which can be directly embedded into, to be installed in wafer defect scanning system, with to original wafer defect scanning system into
Row upgrading, makes it have the function of detection chain type defect.Computer program in computer storage medium of the invention is processed
When device executes, the chain type defect on the wafer can effectively be detected, be screened, the chain type is lacked with realizing
Sunken effective specification control.
One embodiment of the invention provides a kind of wafer defect detection system, is one embodiment of the invention refering to Fig. 4, Fig. 4
The system block diagram of wafer defect detection system, the wafer defect detection system 1 include that the screening of coordinate acquiring unit 11, first is single
First 12, second screening unit 13, third filtering unit 14 and output unit 15.The following detailed description of the wafer defect detection system
System 1:
The coordinate acquiring unit 11 is used to establish connection with a wafer defect scanning system 2, in the wafer defect
Grid coordinate system is established in scanning system 2 and defines the coordinate origin of the grid coordinate system, and is obtained the wafer and lacked
Each defect on 3 surface of wafer to be detected that scans of scanning system 2 and each defect are fallen into the grid
Coordinate in coordinate system.Concrete example can refer to above step S1-A and step S1-B, and details are not described herein.
It is each on 3 surface of the wafer that first screening unit 12 is used to be obtained according to the coordinate acquiring unit 11
Coordinate of a defect in the grid coordinate system filters out from each defect on 3 surface of wafer and closes on defect, and
Defect is closed on described in filtering out is defined as first kind defect.First screening unit 12 includes: distance calculation module
121, for traversing all defects on 3 surface of the wafer that the wafer defect scanning system 2 scans, calculate
The distance between any 2 defects value Sx；And first comparison module 122, for by the distance calculation module 121
Each calculated described distance value SxCompared with the first specification value Spec1 of a setting, and work as the distance value SxLess than institute
When stating the first specification value Spec1, by the distance value SxCorresponding 2 defects are defined as the first kind defect.Concrete example
It can refer to above step S1-C, details are not described herein.
Second screening unit 13 is used for from all on 3 surface of the wafer that first screening unit 12 obtains
Filtered out in the first kind defect and continuously close on defect, and by filter out described continuously closing on defect is defined as second
Class defect.Second screening unit 13 includes: range deviation computing module 131, for traversing the distance calculation module 121
Calculated all distance value Sx, calculate any 2 distance value SxBetween deviation Dx；And second compare
Module 132 is used for the deviation DxCompared with the second specification value Spec2 of a setting, and work as the deviation DxLess than institute
When stating the second specification value Spec2, by the deviation DxCorresponding 3 defects are defined as the second class defect.Concrete example
It can refer to above step S1-D, details are not described herein.
The third filtering unit 14 is used to preset the defect number for constituting each chain type defect, and according to institute
Defect number is stated to screen from all second class defects on 3 surface of the wafer that second screening unit 13 obtains
Chain type defect out.The third filtering unit 14 includes: defects count setting module 141, constitutes each institute for presetting
State the defect number m of chain type defect；Binding clip Corner Block List Representation 142, the crystalline substance obtained for traversing second comparison module 132
3 all the second class defects of circle, connecting line any two that any m the second class defects are sequentially connected with and are obtained
Do not intersect, to obtain m-2 wire clamp angle value Ax；And third comparison module 143, for the binding clip Corner Block List Representation 142 to be obtained
The m-2 wire clamp angle value A arrivedxCompared with the value range Spec3 of the third specification of a setting, and work as the m-2 wire clamp
Angle value AxWhen meeting the value range Spec3 of the third specification, by the m-2 wire clamp angle value AxCorresponding m described second
Class defect is defined as the chain type defect.Wherein, the value range Spec3 of the third specification be 175 °~185 ° (for example,
178 °, 180 °, 182 ° etc.).Concrete example can refer to above step S1-E, and details are not described herein.
The quantity for the chain type defect that the output unit 15 is used to be filtered out according to the third filtering unit 14
The diagnostic result of the chain type defect is exported, the diagnostic result of the chain type defect of output can be OK information or NG information.
The decision principle and content for exporting the OK information or NG information have been explained in step S1-F, and details are not described herein.
In addition, being the effect of the wafer defect detection system of one embodiment of the invention refering to Fig. 5 a and Fig. 5 b, Fig. 5 a and Fig. 5 b
Fruit schematic diagram can be seen that the wafer defect scanning system detects all positions on the wafer from Fig. 5 a and Fig. 5 b
Random normal defect and the chain type defect with special distribution map.Wherein, when the chain type defect includes the defect
The chain type defect L1 and described defect P9, P10, P1, P12, P13 and P14 that P5, P6, P7 and P8 are constituted constitute described
Chain type defect L2, and set when constituting the defect number m of the chain type defect as 5, then, by the wafer defect detection system
Finally only show to include that the defect number is described greater than 5 after the detection of system, in the wafer defect detection system
6 defect P9~P14 in chain type defect L2.Therefore, the wafer defect detection system can exclude the normal defect
With the interference of the chain type defect of the defect number without departing from setting, with realize to exceed specification the chain type defect
Detection, and then realize and the specification of the chain type defect managed.
In addition, it should be noted that, wafer defect detection system of the invention can be used as a self-contained unit and independence
Except the wafer defect scanning system, it can also become one with the wafer defect scanning system, wafer defect inspection
Examining system and the wafer defect scanning system are respectively a component part of the same device.
In conclusion wafer defect detection system provided by the invention includes obtaining list for obtaining the coordinate of defect coordinate
Member closes on the first screening unit of defect, continuously closes on the second screening unit of defect, for screening for screening for screening
The third filtering unit of chain type defect and output unit for exporting the selection result, can be to the chain type on the wafer
Defect is effectively detected, is screened, to realize that the effective specification to the chain type defect is managed.
Foregoing description is only the description to present pre-ferred embodiments, not to any restriction of the scope of the invention, this hair
Any change, the modification that the those of ordinary skill in bright field does according to the disclosure above content, belong to the protection of claims
Range.
Claims (13)
1. a kind of wafer defect detection method characterized by comprising
Grid coordinate system is established in a wafer defect scanning system, and defines the coordinate origin of the grid coordinate system；
A crystal column surface to be detected is scanned by the wafer defect scanning system, it is each on the crystal column surface to obtain
The coordinate of defect and each defect in the grid coordinate system；
It is filtered out from each defect according to each defect in the coordinate in the grid coordinate system and closes on defect, it is fixed
Justice is first kind defect；
It is filtered out from all first kind defects and continuously closes on defect, be defined as the second class defect；And
The defect number for constituting each chain type defect is preset, according to the defect number from all second classes
Chain type defect is filtered out in defect.
2. wafer defect detection method as described in claim 1, which is characterized in that the step of filtering out the first kind defect
Include: all defects traversed on the crystal column surface that the wafer defect scanning system scans, calculates any 2
The distance between a defect value Sx；And by each calculated described distance value SxWith the first specification value of a setting
Spec1 compares, as the distance value SxWhen less than the first specification value Spec1, the distance value SxCorresponding 2 defects are
For the first kind defect.
3. wafer defect detection method as claimed in claim 2, which is characterized in that the step of filtering out the second class defect
It include: all distance value S of traversalx, calculate any 2 distance value SxBetween deviation Dx；And it will count
Each the described deviation D calculatedxCompared with the second specification value Spec2 of a setting, as the deviation DxLess than described
When two specification value Spec2, the deviation DxCorresponding 3 defects are the second class defect.
4. wafer defect detection method as claimed in claim 3, which is characterized in that the step of filtering out chain type defect packet
Include: defining the defect number is m, by any m connections for being sequentially connected with and obtaining in all the second class defects
Any two, line do not intersect, to obtain m-2 wire clamp angle value Ax；And by the m-2 wire clamp angle value AxWith the of a setting
The value range Spec3 of three specifications compares, as the m-2 wire clamp angle value AxMeet the value range Spec3 of the third specification
When, the m-2 wire clamp angle value AxCorresponding m the second class defects constitute the chain type defect.
5. wafer defect detection method as claimed in claim 4, which is characterized in that the value range Spec3 of the third specification
It is 175 °~185 °.
6. wafer defect detection method as described in claim 1, which is characterized in that further include according to the chain type filtered out
The quantity of defect exports the diagnostic result of the chain type defect.
7. a kind of computer storage medium, is stored thereon with computer program, which is characterized in that the computer program is processed
Device realizes wafer defect detection method described in any one of claims 1 to 6 when executing.
8. a kind of wafer defect detection system characterized by comprising
Coordinate acquiring unit, for establishing connection with a wafer defect scanning system, in the wafer defect scanning system
It establishes grid coordinate system and defines the coordinate origin of the grid coordinate system, and obtain the wafer defect scanning system and sweep
The coordinate of each defect and each defect in the grid coordinate system on one described crystal column surface to be detected；
First screening unit, each defect on the crystal column surface for being obtained according to the coordinate acquiring unit is described
The institute that coordinate in grid coordinate system filters out from each defect on the crystal column surface and closes on defect, and will filter out
It states and closes on defect and be defined as first kind defect；
Second screening unit, for being lacked from all first kind on the crystal column surface that first screening unit obtains
Filtered out in falling into and continuously close on defect, and by filter out described continuously closing on defect is defined as the second class defect；And
Third filtering unit, for presetting the defect number for constituting each chain type defect, and according to the defect
Number filters out chain type defect from all second class defects on the crystal column surface that second screening unit obtains.
9. wafer defect detection system as claimed in claim 8, which is characterized in that first screening unit includes: distance
Computing module is counted for traversing all defects on the crystal column surface that the wafer defect scanning system scans
Calculate the distance between any 2 defects value Sx；And first comparison module, based on by the distance calculation module
Each the described distance value S calculatedxCompared with the first specification value Spec1 of a setting, and work as the distance value SxLess than described
When the first specification value Spec1, by the distance value SxCorresponding 2 defects are defined as the first kind defect.
10. wafer defect detection system as claimed in claim 9, which is characterized in that second screening unit includes: distance
Deviation computing module, for traversing the calculated all distance value S of the distance calculation modulex, calculate any 2 institutes
State distance value SxBetween deviation Dx；And second comparison module, for by the deviation DxWith the second rule of a setting
Lattice value Spec2 compares, and works as the deviation DxWhen less than the second specification value Spec2, by the deviation DxCorresponding 3
A defect is defined as the second class defect.
11. wafer defect detection system as claimed in claim 10, which is characterized in that the third filtering unit includes: scarce
Quantity setting module is fallen into, for presetting the defect number m for constituting each chain type defect；Binding clip Corner Block List Representation, is used for
All the second class defects of the wafer that second comparison module obtains are traversed, any m second classes are lacked
Sunken connecting line any two for being sequentially connected with and obtaining are not intersected, to obtain m-2 wire clamp angle value Ax；And third compares mould
Block, the m-2 wire clamp angle value A for obtaining the binding clip Corner Block List RepresentationxWith the value range of the third specification of a setting
Spec3 compares, and works as the m-2 wire clamp angle value AxWhen meeting the value range Spec3 of the third specification, by the m-2
A wire clamp angle value AxCorresponding m the second class defects are defined as the chain type defect.
12. wafer defect detection system as claimed in claim 11, which is characterized in that the value range of the third specification
Spec3 is 175 °~185 °.
13. the wafer defect detection system as described in any one of claim 8 to 12, which is characterized in that further include that output is single
Member, the quantity of the chain type defect for being filtered out according to the third filtering unit export the diagnosis of the chain type defect
As a result.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811014892.5A CN109065467B (en) | 2018-08-31 | 2018-08-31 | Wafer defect detection system and method and computer storage medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811014892.5A CN109065467B (en) | 2018-08-31 | 2018-08-31 | Wafer defect detection system and method and computer storage medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109065467A true CN109065467A (en) | 2018-12-21 |
| CN109065467B CN109065467B (en) | 2020-11-13 |
Family
ID=64759175
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811014892.5A Active CN109065467B (en) | 2018-08-31 | 2018-08-31 | Wafer defect detection system and method and computer storage medium |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109065467B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113241310A (en) * | 2021-05-28 | 2021-08-10 | 长江存储科技有限责任公司 | Wafer defect detection method, detection device, detection equipment and readable storage medium |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1276577A (en) * | 1999-06-02 | 2000-12-13 | 松下电器产业株式会社 | Pattern defect testing method |
| US20040022429A1 (en) * | 2002-04-12 | 2004-02-05 | Hidekazu Suzuki | Scanning microscope and inspection method employing the scanning microscope |
| US20050168731A1 (en) * | 2001-04-10 | 2005-08-04 | Hisae Shibuya | Method for analyzing defect data and inspection apparatus and review system |
| JP2005244142A (en) * | 2004-02-27 | 2005-09-08 | Nec Electronics Corp | Method of marking defective chip and defective-chip marking apparatus |
| JP2007188968A (en) * | 2006-01-11 | 2007-07-26 | Fujifilm Corp | Analysis method and analysis program of wafer map data |
| US20080037857A1 (en) * | 2006-06-16 | 2008-02-14 | Young-Kyu Lim | Method of classifying directional defects on an object and apparatus for performing the same |
| JP2008300599A (en) * | 2007-05-31 | 2008-12-11 | Nec Electronics Corp | Semiconductor wafer inspecting apparatus |
| US8081814B2 (en) * | 2008-02-29 | 2011-12-20 | Kabushiki Kaisha Toshiba | Linear pattern detection method and apparatus |
| CN103531498B (en) * | 2013-10-18 | 2016-04-20 | 上海华力微电子有限公司 | Wafer defect analytical system |
| CN108352339A (en) * | 2015-09-18 | 2018-07-31 | 科磊股份有限公司 | Adaptive automatic defect classification |
-
2018
- 2018-08-31 CN CN201811014892.5A patent/CN109065467B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1276577A (en) * | 1999-06-02 | 2000-12-13 | 松下电器产业株式会社 | Pattern defect testing method |
| US20050168731A1 (en) * | 2001-04-10 | 2005-08-04 | Hisae Shibuya | Method for analyzing defect data and inspection apparatus and review system |
| US20040022429A1 (en) * | 2002-04-12 | 2004-02-05 | Hidekazu Suzuki | Scanning microscope and inspection method employing the scanning microscope |
| JP2005244142A (en) * | 2004-02-27 | 2005-09-08 | Nec Electronics Corp | Method of marking defective chip and defective-chip marking apparatus |
| JP2007188968A (en) * | 2006-01-11 | 2007-07-26 | Fujifilm Corp | Analysis method and analysis program of wafer map data |
| US20080037857A1 (en) * | 2006-06-16 | 2008-02-14 | Young-Kyu Lim | Method of classifying directional defects on an object and apparatus for performing the same |
| JP2008300599A (en) * | 2007-05-31 | 2008-12-11 | Nec Electronics Corp | Semiconductor wafer inspecting apparatus |
| US8081814B2 (en) * | 2008-02-29 | 2011-12-20 | Kabushiki Kaisha Toshiba | Linear pattern detection method and apparatus |
| CN103531498B (en) * | 2013-10-18 | 2016-04-20 | 上海华力微电子有限公司 | Wafer defect analytical system |
| CN108352339A (en) * | 2015-09-18 | 2018-07-31 | 科磊股份有限公司 | Adaptive automatic defect classification |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113241310A (en) * | 2021-05-28 | 2021-08-10 | 长江存储科技有限责任公司 | Wafer defect detection method, detection device, detection equipment and readable storage medium |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109065467B (en) | 2020-11-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4587617A (en) | Image inspection system for defect detection | |
| US6779159B2 (en) | Defect inspection method and defect inspection apparatus | |
| US8275189B2 (en) | Defect inspection system | |
| US7855363B2 (en) | Inspection method and apparatus using an electron beam | |
| CN105845062A (en) | Method and system of detecting display panels, and batch detection method of display panels | |
| CN102508110B (en) | Texture-based insulator fault diagnostic method | |
| US6985220B1 (en) | Interactive threshold tuning | |
| CN108827970B (en) | AOI system-based method and system for automatically judging defects of different panels | |
| CN104008550A (en) | Wafer surface defect feature analysis method and system and wafer surface detect feature classification method and system | |
| CN103471973B (en) | A kind of image method measures the method for fabric pore feature | |
| CN106231295A (en) | A kind of display screen image quality automatic checkout system, detection method and application thereof | |
| JP2010286501A5 (en) | ||
| CN101103246A (en) | Automatic judging device and automatic judging method | |
| KR20160042023A (en) | Adaptive local threshold and color filtering | |
| KR20160040658A (en) | Setting up a wafer inspection process using programmed defects | |
| CN109065467A (en) | Wafer defect detection system and detection method and computer storage medium | |
| US20140185918A1 (en) | Charged particle beam apparatus that performs image classification assistance | |
| CN101867787A (en) | Self-test method for LCD display with camera | |
| CN104394377B (en) | A kind of fuzzy abnormal recognition methods of monitoring image and device | |
| CN102854195B (en) | Method for detecting defect coordinates on color filter | |
| JP5123244B2 (en) | Shape defect inspection device, shape modeling device, and shape defect inspection program | |
| US6229331B1 (en) | Apparatus for and method of inspecting patterns on semiconductor integrated devices | |
| US8358406B2 (en) | Defect inspection method and defect inspection system | |
| CN106412575B (en) | Detect the method and device of display | |
| DE4434197A1 (en) | Diagnostic technology for the operation of an exhaust gas oxygen sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |