CN109065467A - Wafer defect detection system and detection method and computer storage medium - Google Patents

Wafer defect detection system and detection method and computer storage medium Download PDF

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Publication number
CN109065467A
CN109065467A CN201811014892.5A CN201811014892A CN109065467A CN 109065467 A CN109065467 A CN 109065467A CN 201811014892 A CN201811014892 A CN 201811014892A CN 109065467 A CN109065467 A CN 109065467A
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defect
value
wafer
chain type
coordinate
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CN201811014892.5A
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CN109065467B (en
Inventor
胡向华
何广智
顾晓芳
倪棋梁
龙吟
陈宏璘
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Shanghai Huali Microelectronics Corp
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Shanghai Huali Microelectronics Corp
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • GPHYSICS
    • G06COMPUTING; CALCULATING; COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00Image analysis
    • G06T7/0002Inspection of images, e.g. flaw detection
    • G06T7/0004Industrial image inspection
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

Abstract

The present invention provides a kind of wafer defect detection system and detection methods and computer storage medium, the wafer defect detection method includes: to establish grid coordinate system in wafer defect scanning system, to scan the coordinate for obtaining each defect and each defect on the crystal column surface in the grid coordinate system;First kind defect is filtered out from each defect in the coordinate in the grid coordinate system according to each defect;The second class defect is filtered out from all first kind defects;The defect number for constituting each chain type defect is preset, chain type defect is filtered out from all the second class defects according to the defect number;And the diagnostic result of the chain type defect is exported according to the quantity of the chain type defect filtered out.Technical solution of the present invention can effectively detect the chain type defect on the wafer, be screened, to realize that the effective specification to the chain type defect is managed.

Description

Wafer defect detection system and detection method and computer storage medium
Technical field
The present invention relates to semiconductor technology manufacturing field, in particular to a kind of wafer defect detection system and detection method and Computer storage medium.
Background technique
In the manufacturing process of semiconductor integrated circuit, defects detection has become an important means for promoting yield. Defect Scanning generallys use tale (total count), incremental count (add count), repeat count in the industry at present The mode of (repeat count), and utilize the (automatic based on pixel size, geomery etc. from classification software classification of board Classification) mode of rough classification (rough bin) that goes out carries out defect control, as defective locations occur at random on wafer This normal defect can carry out the defects detection that system is realized in specification setting by these types of usual manner.But as chain type This defect with special distribution map (special map) of defect will have higher standard (level) in disposition.Although This chain type defect with special distribution map (special map) can be scanned by board to be come, but due to fixed not to it Justice and mix with normal defect, would not individually set specification goes to judge whether it exceeds specification (out of spec), because This is just easy to if going to detect by usual manners such as existing tales (total count) so that normal defect and chain type Defect be added together after tale again without reaching the standard of early warning, and then lead to not this chain type defects detection simultaneously Alarm (alarm) comes out.Currently, the self-test for being directed to chain type defect especially exists there are no relevant, targeted means In the case that normal defect is more, chain type defect can not effectively and accurately be detected.
It stores and is situated between therefore, it is necessary to a kind of wafer defect detection system and detection method and computer for chain type defect Matter, effectively to detect chain type defect.
Summary of the invention
The purpose of the present invention is to provide a kind of wafer defect detection system and detection method and computer storage medium, with Chain type defect is effectively detected, and then effectively control is realized to chain type defect.
To achieve the above object, the present invention provides a kind of wafer defect detection methods, comprising:
Grid coordinate system is established in a wafer defect scanning system, and defines the coordinate origin of the grid coordinate system;
A crystal column surface to be detected is scanned by the wafer defect scanning system, to obtain on the crystal column surface The coordinate of each defect and each defect in the grid coordinate system;
According to each defect the coordinate in the grid coordinate system filtered out from each defect close on it is scarce It falls into, is defined as first kind defect;
It is filtered out from all first kind defects and continuously closes on defect, be defined as the second class defect;And
The defect number for constituting each chain type defect is preset, according to the defect number from all described Chain type defect is filtered out in two class defects.
Optionally, the step of filtering out the first kind defect includes: that the traversal wafer defect scanning system scans The crystal column surface on all defects, calculate the distance between any 2 defects value Sx;And it will count Each the described distance value S calculatedxCompared with the first specification value Spec1 of a setting, as the distance value SxLess than described When one specification value Spec1, the distance value SxCorresponding 2 defects are the first kind defect.
Optionally, the step of filtering out the second class defect includes: all distance value S of traversalx, calculating takes the post as Anticipate 2 distance value SxBetween deviation Dx;And by each calculated described deviation DxWith the of a setting Two specification value Spec2 compare, as the deviation DxWhen less than the second specification value Spec2, the deviation DxCorresponding 3 A defect is the second class defect.
Optionally, the step of filtering out the chain type defect includes: to define the defect number for m, described in all Any m in second class defect connecting line any two for being sequentially connected with and obtaining are not intersected, to obtain m-2 wire clamp angle value Ax;And by the m-2 wire clamp angle value AxCompared with the value range Spec3 of the third specification of a setting, when the m-2 line Angle value AxWhen meeting the value range Spec3 of the third specification, the m-2 wire clamp angle value AxCorresponding m described second Class defect constitutes the chain type defect.
Optionally, the value range Spec3 of the third specification is 175 °~185 °.
It optionally, further include the diagnosis knot that the chain type defect is exported according to the quantity of the chain type defect filtered out Fruit.
The present invention also provides a kind of computer storage mediums, are stored thereon with computer program, the computer program Wafer defect detection method of the present invention is realized when being executed by processor.
The present invention also provides a kind of wafer defect detection systems, comprising:
Coordinate acquiring unit, for establishing connection with a wafer defect scanning system, to scan system in the wafer defect Grid coordinate system is established on system and defines the coordinate origin of the grid coordinate system, and obtains wafer defect scanning system The each defect on the crystal column surface to be detected that scans of uniting and each defect are in the grid coordinate system Coordinate;
First screening unit, each defect on the crystal column surface for being obtained according to the coordinate acquiring unit exist Coordinate in the grid coordinate system filters out from each defect on the crystal column surface and closes on defect, and will filter out Described close on defect and be defined as first kind defect;
Second screening unit, for from all described first on the crystal column surface that first screening unit obtains Filtered out in class defect and continuously close on defect, and by filter out described continuously closing on defect is defined as the second class defect; And
Third filtering unit is lacked for presetting the defect number for constituting each chain type defect, and according to described It falls into number and filters out chain type from all second class defects on the crystal column surface that second screening unit obtains Defect.
Optionally, first screening unit includes: distance calculation module, for traversing the wafer defect scanning system All defects on the crystal column surface scanned calculate the distance between any 2 defects value Sx;With And first comparison module, for by each calculated described distance value S of the distance calculation modulexWith the of a setting One specification value Spec1 compares, and works as the distance value SxWhen less than the first specification value Spec1, by the distance value SxIt is corresponding 2 defects be defined as the first kind defect.
Optionally, second screening unit includes: range deviation computing module, for traversing the distance calculation module Calculated all distance value Sx, calculate any 2 distance value SxBetween deviation Dx;And second compare Module is used for the deviation DxCompared with the second specification value Spec2 of a setting, and work as the deviation DxLess than described When the second specification value Spec2, by the deviation DxCorresponding 3 defects are defined as the second class defect.
Optionally, the third filtering unit includes: defects count setting module, each described for presetting composition The defect number m of chain type defect;Binding clip Corner Block List Representation, it is all for traversing the wafer that second comparison module obtains The second class defect, connecting line any two that any m the second class defects are sequentially connected with and are obtained are not intersected, with Obtain m-2 wire clamp angle value Ax;And third comparison module, the m-2 line for obtaining the binding clip Corner Block List Representation Angle value AxCompared with the value range Spec3 of the third specification of a setting, and work as the m-2 wire clamp angle value AxMeet described When the value range Spec3 of third specification, by the m-2 wire clamp angle value AxCorresponding m the second class defects are defined as institute State chain type defect.
Optionally, the value range Spec3 of the third specification is 175 °~185 °.
It optionally, further include output unit, the chain type defect for being filtered out according to the third filtering unit Quantity exports the diagnostic result of the chain type defect.
Compared with prior art, wafer defect detection system and detection method provided by the invention and computer storage are situated between Matter scans first kind defect (closing on defect) by wafer defect scanning system, the second class defect (is continuously closed on scarce Fall into) and chain type defect, the chain type defect is effectively detected and be screened;Meanwhile the specification of chain type defect is carried out Definition, to realize that the effective specification to the chain type defect is managed.
Detailed description of the invention
Fig. 1 is the flow chart of the wafer defect detection method of one embodiment of the invention;
Fig. 2 is the schematic diagram of lower 4 defects of the grid coordinate system in the wafer defect detection method of one embodiment of the invention;
Fig. 3 is the schematic diagram at each wire clamp angle generated after 4 defects shown in Fig. 2 are sequentially connected with;
Fig. 4 is the system block diagram of the wafer defect detection system of one embodiment of the invention;
Fig. 5 a and Fig. 5 b are the effect diagrams of the wafer defect detection system of one embodiment of the invention.
Wherein, the reference numerals are as follows by 1~5b of attached drawing:
P1~P14- defect;S1~S3Distance value;D1、D2Deviation;A1、A2Wire clamp angle value;1- wafer defect detection system System;2- wafer defect scanning system;3- wafer;11- coordinate acquiring unit;The first screening unit of 12-;The second screening unit of 13-; 14- third filtering unit;15- output unit;121- distance calculation module;The first comparison module of 122-;131- range deviation meter Calculate module;The second comparison module of 132-;141- defects count setting module;142- binding clip Corner Block List Representation;143- third compares mould Block.
Specific embodiment
To keep the purpose of the present invention, advantages and features clearer, below in conjunction with 1~5b of attached drawing to crystalline substance proposed by the present invention Circle defect detecting system and detection method and computer storage medium are described in further detail.It should be noted that attached drawing is adopted With very simplified form and using non-accurate ratio, only to facilitate, lucidly aid in illustrating the embodiment of the present invention Purpose.
One embodiment of the invention provides a kind of wafer defect detection method, and refering to fig. 1, Fig. 1 is one embodiment of the invention The flow chart of wafer defect detection method, the wafer defect detection method include:
Step S1-A, grid coordinate system is established in a wafer defect scanning system, and defines the grid coordinate system Coordinate origin;
Step S1-B, a crystal column surface to be detected is scanned by the wafer defect scanning system, to obtain the crystalline substance The coordinate of each defect and each defect in the grid coordinate system on circular surfaces;
Step S1-C, it is screened from each defect according to each defect in the coordinate in the grid coordinate system Defect is closed on out, is defined as first kind defect;
Step S1-D, it is filtered out from all first kind defects and continuously closes on defect, be defined as the second class and lack It falls into;
Step S1-E, the defect number for constituting each chain type defect is preset, according to the defect number from institute Chain type defect is filtered out in the second class defect having;
Step S1-F, the diagnostic result of the chain type defect is exported according to the quantity of the chain type defect filtered out.
Wafer defect detection method provided in this embodiment is introduced in more detail referring next to Fig. 2 and Fig. 3.Fig. 2 is this The schematic diagram of lower 4 defects of grid coordinate system in the wafer defect detection method of an embodiment is invented, Fig. 3 is shown in Fig. 24 The schematic diagram at each wire clamp angle that a defect generates after being sequentially connected with.
Firstly, referring to Fig.2, establishing grid coordinate system in a wafer defect scanning system, and define according to step S1-A The coordinate origin of the grid coordinate system.As can be seen from Figure 2, the coordinate origin (0,0) of the grid coordinate system can be institute The center of wafer is stated, the length and wide size of each grid may be set to unit length 1, the list in the grid coordinate system The actual size of bit length 1 can be the size of 1 or several pixels under the wafer defect scanning system highest resolution.
Then, referring to Fig.2, according to step S1-B, a wafer to be detected is scanned by the wafer defect scanning system Surface, to obtain the coordinate of each defect and each defect in the grid coordinate system on the crystal column surface. The defect has corresponding coordinate in grid coordinate system.If wafer defect scanning system this time scans 4 point defects (i.e. shape and size meet point defect definition requirement), is respectively labeled as P1, P2, P3 and P4, due to the length of each grid Be sized to unit length 1 with wide, then the coordinate of point defect P1, P2, P3 and P4 be respectively (- 4,1), (- 2,3), (- 1,4) and (1,6).
Then, referring to Fig.2, according to step S1-C, according to coordinate of each defect in the grid coordinate system from It is filtered out in each defect and closes on defect, be defined as first kind defect.The step of filtering out the first kind defect include: All defects on the crystal column surface that the wafer defect scanning system scans are traversed, any 2 institutes are calculated State the distance between defect value Sx;And by each calculated described distance value SxWith the first specification value of a setting Spec1 compares, as the distance value SxWhen less than the first specification value Spec1, the distance value SxCorresponding 2 defects are non- It often closes on, is even closely packed together and has part edge area coincidence, the two defects are the first kind defect.Its In, when the coordinate of 2 defects is respectively (a1, b1) and (a2, b2), the distance value Sx=((a2-a1)2+(b2- b1)2)1/2.As can be seen from Figure 2, the defect on the crystal column surface scanned totally 4,4 defects are respectively P1, P2, P3 and P4, the coordinate of 4 defects are respectively (- 4,1), (- 2,3), (- Isosorbide-5-Nitrae) and (1,6), then according to calculating institute State distance value SxFormula, calculate the distance between the defect P1 and P2 value S1ForBetween the defect P2 and P3 away from From value S2It is 1, the distance between described defect P3 and P4 value S3ForWhen the first specification value Spec1 set is 3, The distance value S1、S2And S3The both less than described first specification value Spec1, then distance value S1The corresponding defect P1 and P2, Distance value S2The corresponding defect P2 and P3 and distance value S3The corresponding defect P3 and P4 is to close on defect, i.e. point Defect P1, P2, P3 and P4 are screened as the first kind defect.
Then, referring to Fig.2, according to step S1-D, filtered out from all first kind defects continuously close on it is scarce It falls into, is defined as the second class defect.The step of filtering out the second class defect includes: all distance value S of traversalx, meter Calculate any 2 distance value SxBetween deviation Dx;And by each calculated described deviation DxIt is set with one The second fixed specification value Spec2 compares, as the deviation DxWhen less than the second specification value Spec2, the deviation DxIt is right 3 defects answered are exactly continuously to close on, these three defects are even successively closely packed together and two neighboring defect has Part edge area coincidence, these three defects are the second class defect.As can be seen from Figure 2, the distance value S1With S2It Between the deviation D1ForThe distance value S2With S3Between the deviation D2ForWhen the institute of setting When to state the second specification value Spec2 be 2, compare and analyze the deviation D1And D2With the size of the second specification value Spec2, knot Fruit shows the deviation D1And D2The both less than described second specification value Spec2, then the deviation D1The corresponding defect P1, P2 and P3 and the deviation D2Corresponding described defect P2, P3 and P4 continuously close on, i.e., described defect P1, P2, P3 and P4 is screened as the second class defect.
Then, refering to Fig. 2 and Fig. 3, according to step S1-E, the defect for constituting each chain type defect is preset Number, filters out chain type defect from all the second class defects according to the defect number.Filter out the chain type defect The step of include: that define the defect number be m, by any m in all the second class defects be sequentially connected with and To connecting line any two do not intersect, to obtain m-2 wire clamp angle value Ax;And by the m-2 wire clamp angle value AxWith one The value range Spec3 of the third specification of setting compares, as the m-2 wire clamp angle value AxMeet the range of the third specification When value Spec3, the m-2 wire clamp angle value AxCorresponding m the second class defects constitute the chain type defect.Wherein, The value range Spec3 of the third specification is 175 °~185 ° (for example, 178 °, 180 °, 182 ° etc.).It can from Fig. 2 and Fig. 3 Out, when setting the least defect number m that can constitute chain type defect as 3, being sequentially connected with point defect is that P1, P2, P3 can be obtained To a wire clamp angle value A1, it is sequentially connected with available another wire clamp angle value A of P2, P3, P42, and the wire clamp angle value A1With A2All it is 180 °, compares and analyze the wire clamp angle value A1And A2With the value range Spec3 (i.e. 175 °~185 °) of the third specification Size, the wire clamp angle value A as the result is shown1And A2Meet the value range Spec3 of third specification, therefore, 2 wire clamp angles Value A1And A2Corresponding 4 defects P1, P2, P3 and P4 constitute the chain type defect.When setting can constitute the least of chain type defect When defect number m is 4, being sequentially connected with point defect is the available wire clamp angle value A of P1, P2, P3, P41, value A2, and it is described Wire clamp angle value A1And A2All it is 180 °, belongs in 175 °~185 °, that is, meets the rule of the value range Spec3 of the third specification Fixed, 4 defects P1, P2, P3 and P4 just constitute the chain type defect.
Finally, exporting the chain type defect according to the quantity of the chain type defect filtered out according to step S1-F Diagnostic result.The diagnostic result of the chain type defect of output can be OK information or NG information, when the chain type filtered out When the quantity of defect is less than the defect number m of definition, the diagnostic result of output is OK information, the shape of the OK information Formula, which can be, directly shows the form of " OK " in the judgement field of test item, and on the other side, when the chain filtered out When the quantity of formula defect is greater than or equal to the defect number m of definition, the diagnostic result of output is NG information, the NG Information is exactly directly to show the form of " NG " in the judgement field of test item;Certainly, the OK information and NG information can also be with Other forms, for example, the OK information form can be by the font of test data keep original setting color (such as Black) form, the form of corresponding NG information is exactly that the font of test data is become to red;For example described OK letter again The form of breath is that the form for each defect for constituting the chain type defect is highlighted in the grid coordinate system, is corresponding to it NG information be exactly in detection system to jump out warning note frame;For another example the OK information and corresponding NG information are adopted With the form of output examining report.
In conclusion wafer defect detection method provided by the invention, comprising: established in a wafer defect scanning system Grid coordinate system scans a crystal column surface to be detected by the wafer defect scanning system, to obtain the crystal column surface On coordinate in the grid coordinate system of each defect and each defect;According to each defect in the net Coordinate in lattice coordinate system filters out first kind defect from each defect;It is screened from all first kind defects Second class defect out;The defect number for constituting each chain type defect is preset, according to the defect number from all Chain type defect is filtered out in the second class defect;And it is exported according to the quantity of the chain type defect filtered out described The diagnostic result of chain type defect, so as to effectively be detected, screened to the chain type defect on the wafer, with reality Now the effective specification of the chain type defect is managed.
One embodiment of the invention provides a kind of computer storage medium, is stored thereon with computer program, the computer Wafer defect detection method described in above step S1-A to step S1-F is realized when program is executed by processor.Meter of the invention Calculation machine storage medium, which can be directly embedded into, to be installed in wafer defect scanning system, with to original wafer defect scanning system into Row upgrading, makes it have the function of detection chain type defect.Computer program in computer storage medium of the invention is processed When device executes, the chain type defect on the wafer can effectively be detected, be screened, the chain type is lacked with realizing Sunken effective specification control.
One embodiment of the invention provides a kind of wafer defect detection system, is one embodiment of the invention refering to Fig. 4, Fig. 4 The system block diagram of wafer defect detection system, the wafer defect detection system 1 include that the screening of coordinate acquiring unit 11, first is single First 12, second screening unit 13, third filtering unit 14 and output unit 15.The following detailed description of the wafer defect detection system System 1:
The coordinate acquiring unit 11 is used to establish connection with a wafer defect scanning system 2, in the wafer defect Grid coordinate system is established in scanning system 2 and defines the coordinate origin of the grid coordinate system, and is obtained the wafer and lacked Each defect on 3 surface of wafer to be detected that scans of scanning system 2 and each defect are fallen into the grid Coordinate in coordinate system.Concrete example can refer to above step S1-A and step S1-B, and details are not described herein.
It is each on 3 surface of the wafer that first screening unit 12 is used to be obtained according to the coordinate acquiring unit 11 Coordinate of a defect in the grid coordinate system filters out from each defect on 3 surface of wafer and closes on defect, and Defect is closed on described in filtering out is defined as first kind defect.First screening unit 12 includes: distance calculation module 121, for traversing all defects on 3 surface of the wafer that the wafer defect scanning system 2 scans, calculate The distance between any 2 defects value Sx;And first comparison module 122, for by the distance calculation module 121 Each calculated described distance value SxCompared with the first specification value Spec1 of a setting, and work as the distance value SxLess than institute When stating the first specification value Spec1, by the distance value SxCorresponding 2 defects are defined as the first kind defect.Concrete example It can refer to above step S1-C, details are not described herein.
Second screening unit 13 is used for from all on 3 surface of the wafer that first screening unit 12 obtains Filtered out in the first kind defect and continuously close on defect, and by filter out described continuously closing on defect is defined as second Class defect.Second screening unit 13 includes: range deviation computing module 131, for traversing the distance calculation module 121 Calculated all distance value Sx, calculate any 2 distance value SxBetween deviation Dx;And second compare Module 132 is used for the deviation DxCompared with the second specification value Spec2 of a setting, and work as the deviation DxLess than institute When stating the second specification value Spec2, by the deviation DxCorresponding 3 defects are defined as the second class defect.Concrete example It can refer to above step S1-D, details are not described herein.
The third filtering unit 14 is used to preset the defect number for constituting each chain type defect, and according to institute Defect number is stated to screen from all second class defects on 3 surface of the wafer that second screening unit 13 obtains Chain type defect out.The third filtering unit 14 includes: defects count setting module 141, constitutes each institute for presetting State the defect number m of chain type defect;Binding clip Corner Block List Representation 142, the crystalline substance obtained for traversing second comparison module 132 3 all the second class defects of circle, connecting line any two that any m the second class defects are sequentially connected with and are obtained Do not intersect, to obtain m-2 wire clamp angle value Ax;And third comparison module 143, for the binding clip Corner Block List Representation 142 to be obtained The m-2 wire clamp angle value A arrivedxCompared with the value range Spec3 of the third specification of a setting, and work as the m-2 wire clamp Angle value AxWhen meeting the value range Spec3 of the third specification, by the m-2 wire clamp angle value AxCorresponding m described second Class defect is defined as the chain type defect.Wherein, the value range Spec3 of the third specification be 175 °~185 ° (for example, 178 °, 180 °, 182 ° etc.).Concrete example can refer to above step S1-E, and details are not described herein.
The quantity for the chain type defect that the output unit 15 is used to be filtered out according to the third filtering unit 14 The diagnostic result of the chain type defect is exported, the diagnostic result of the chain type defect of output can be OK information or NG information. The decision principle and content for exporting the OK information or NG information have been explained in step S1-F, and details are not described herein.
In addition, being the effect of the wafer defect detection system of one embodiment of the invention refering to Fig. 5 a and Fig. 5 b, Fig. 5 a and Fig. 5 b Fruit schematic diagram can be seen that the wafer defect scanning system detects all positions on the wafer from Fig. 5 a and Fig. 5 b Random normal defect and the chain type defect with special distribution map.Wherein, when the chain type defect includes the defect The chain type defect L1 and described defect P9, P10, P1, P12, P13 and P14 that P5, P6, P7 and P8 are constituted constitute described Chain type defect L2, and set when constituting the defect number m of the chain type defect as 5, then, by the wafer defect detection system Finally only show to include that the defect number is described greater than 5 after the detection of system, in the wafer defect detection system 6 defect P9~P14 in chain type defect L2.Therefore, the wafer defect detection system can exclude the normal defect With the interference of the chain type defect of the defect number without departing from setting, with realize to exceed specification the chain type defect Detection, and then realize and the specification of the chain type defect managed.
In addition, it should be noted that, wafer defect detection system of the invention can be used as a self-contained unit and independence Except the wafer defect scanning system, it can also become one with the wafer defect scanning system, wafer defect inspection Examining system and the wafer defect scanning system are respectively a component part of the same device.
In conclusion wafer defect detection system provided by the invention includes obtaining list for obtaining the coordinate of defect coordinate Member closes on the first screening unit of defect, continuously closes on the second screening unit of defect, for screening for screening for screening The third filtering unit of chain type defect and output unit for exporting the selection result, can be to the chain type on the wafer Defect is effectively detected, is screened, to realize that the effective specification to the chain type defect is managed.
Foregoing description is only the description to present pre-ferred embodiments, not to any restriction of the scope of the invention, this hair Any change, the modification that the those of ordinary skill in bright field does according to the disclosure above content, belong to the protection of claims Range.

Claims (13)

1. a kind of wafer defect detection method characterized by comprising
Grid coordinate system is established in a wafer defect scanning system, and defines the coordinate origin of the grid coordinate system;
A crystal column surface to be detected is scanned by the wafer defect scanning system, it is each on the crystal column surface to obtain The coordinate of defect and each defect in the grid coordinate system;
It is filtered out from each defect according to each defect in the coordinate in the grid coordinate system and closes on defect, it is fixed Justice is first kind defect;
It is filtered out from all first kind defects and continuously closes on defect, be defined as the second class defect;And
The defect number for constituting each chain type defect is preset, according to the defect number from all second classes Chain type defect is filtered out in defect.
2. wafer defect detection method as described in claim 1, which is characterized in that the step of filtering out the first kind defect Include: all defects traversed on the crystal column surface that the wafer defect scanning system scans, calculates any 2 The distance between a defect value Sx;And by each calculated described distance value SxWith the first specification value of a setting Spec1 compares, as the distance value SxWhen less than the first specification value Spec1, the distance value SxCorresponding 2 defects are For the first kind defect.
3. wafer defect detection method as claimed in claim 2, which is characterized in that the step of filtering out the second class defect It include: all distance value S of traversalx, calculate any 2 distance value SxBetween deviation Dx;And it will count Each the described deviation D calculatedxCompared with the second specification value Spec2 of a setting, as the deviation DxLess than described When two specification value Spec2, the deviation DxCorresponding 3 defects are the second class defect.
4. wafer defect detection method as claimed in claim 3, which is characterized in that the step of filtering out chain type defect packet Include: defining the defect number is m, by any m connections for being sequentially connected with and obtaining in all the second class defects Any two, line do not intersect, to obtain m-2 wire clamp angle value Ax;And by the m-2 wire clamp angle value AxWith the of a setting The value range Spec3 of three specifications compares, as the m-2 wire clamp angle value AxMeet the value range Spec3 of the third specification When, the m-2 wire clamp angle value AxCorresponding m the second class defects constitute the chain type defect.
5. wafer defect detection method as claimed in claim 4, which is characterized in that the value range Spec3 of the third specification It is 175 °~185 °.
6. wafer defect detection method as described in claim 1, which is characterized in that further include according to the chain type filtered out The quantity of defect exports the diagnostic result of the chain type defect.
7. a kind of computer storage medium, is stored thereon with computer program, which is characterized in that the computer program is processed Device realizes wafer defect detection method described in any one of claims 1 to 6 when executing.
8. a kind of wafer defect detection system characterized by comprising
Coordinate acquiring unit, for establishing connection with a wafer defect scanning system, in the wafer defect scanning system It establishes grid coordinate system and defines the coordinate origin of the grid coordinate system, and obtain the wafer defect scanning system and sweep The coordinate of each defect and each defect in the grid coordinate system on one described crystal column surface to be detected;
First screening unit, each defect on the crystal column surface for being obtained according to the coordinate acquiring unit is described The institute that coordinate in grid coordinate system filters out from each defect on the crystal column surface and closes on defect, and will filter out It states and closes on defect and be defined as first kind defect;
Second screening unit, for being lacked from all first kind on the crystal column surface that first screening unit obtains Filtered out in falling into and continuously close on defect, and by filter out described continuously closing on defect is defined as the second class defect;And
Third filtering unit, for presetting the defect number for constituting each chain type defect, and according to the defect Number filters out chain type defect from all second class defects on the crystal column surface that second screening unit obtains.
9. wafer defect detection system as claimed in claim 8, which is characterized in that first screening unit includes: distance Computing module is counted for traversing all defects on the crystal column surface that the wafer defect scanning system scans Calculate the distance between any 2 defects value Sx;And first comparison module, based on by the distance calculation module Each the described distance value S calculatedxCompared with the first specification value Spec1 of a setting, and work as the distance value SxLess than described When the first specification value Spec1, by the distance value SxCorresponding 2 defects are defined as the first kind defect.
10. wafer defect detection system as claimed in claim 9, which is characterized in that second screening unit includes: distance Deviation computing module, for traversing the calculated all distance value S of the distance calculation modulex, calculate any 2 institutes State distance value SxBetween deviation Dx;And second comparison module, for by the deviation DxWith the second rule of a setting Lattice value Spec2 compares, and works as the deviation DxWhen less than the second specification value Spec2, by the deviation DxCorresponding 3 A defect is defined as the second class defect.
11. wafer defect detection system as claimed in claim 10, which is characterized in that the third filtering unit includes: scarce Quantity setting module is fallen into, for presetting the defect number m for constituting each chain type defect;Binding clip Corner Block List Representation, is used for All the second class defects of the wafer that second comparison module obtains are traversed, any m second classes are lacked Sunken connecting line any two for being sequentially connected with and obtaining are not intersected, to obtain m-2 wire clamp angle value Ax;And third compares mould Block, the m-2 wire clamp angle value A for obtaining the binding clip Corner Block List RepresentationxWith the value range of the third specification of a setting Spec3 compares, and works as the m-2 wire clamp angle value AxWhen meeting the value range Spec3 of the third specification, by the m-2 A wire clamp angle value AxCorresponding m the second class defects are defined as the chain type defect.
12. wafer defect detection system as claimed in claim 11, which is characterized in that the value range of the third specification Spec3 is 175 °~185 °.
13. the wafer defect detection system as described in any one of claim 8 to 12, which is characterized in that further include that output is single Member, the quantity of the chain type defect for being filtered out according to the third filtering unit export the diagnosis of the chain type defect As a result.
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