CN109037459A - A kind of high-purity perovskite thin film preparation method - Google Patents
A kind of high-purity perovskite thin film preparation method Download PDFInfo
- Publication number
- CN109037459A CN109037459A CN201810875565.2A CN201810875565A CN109037459A CN 109037459 A CN109037459 A CN 109037459A CN 201810875565 A CN201810875565 A CN 201810875565A CN 109037459 A CN109037459 A CN 109037459A
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- CN
- China
- Prior art keywords
- thin film
- pbi
- perovskite thin
- film
- purity
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- 239000010409 thin film Substances 0.000 title claims abstract description 89
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 239000010408 film Substances 0.000 claims abstract description 64
- 238000004528 spin coating Methods 0.000 claims abstract description 37
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N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000001548 drop coating Methods 0.000 claims abstract description 11
- 238000010438 heat treatment Methods 0.000 claims description 39
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- 125000001436 propyl group Chemical group data:image/svg+xml;base64,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 data:image/svg+xml;base64,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 [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000001105 regulatory Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000001131 transforming Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/0001—Processes specially adapted for the manufacture or treatment of devices or of parts thereof
- H01L51/0002—Deposition of organic semiconductor materials on a substrate
- H01L51/0003—Deposition of organic semiconductor materials on a substrate using liquid deposition, e.g. spin coating
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/0032—Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
- H01L51/0077—Coordination compounds, e.g. porphyrin
Abstract
The invention discloses a kind of high-purity perovskite thin film preparation methods.It include: a, the PbI for preparing 1mol/ml2Precursor solution；B, apply electric pulse；It c, will be through extra pulse treated PbI2Precursor solution drops in ready substrate, and spin coating obtains PbI2Film；D, by PbI2Film heats on warm table, forms transparent faint yellow film；E, the CH of 0.038mg/ml is prepared3NH3I solution；F, the 0.038mg/ml CH of 100~120ul is measured with liquid-transfering gun3NH3I solution, drop coating is on the faint yellow film obtained in step e；G, perovskite thin film is heated on warm table, perovskite thin film is made to become dark-brown by yellow to get high-purity perovskite thin film.The beneficial effects of the present invention are: the perovskite thin film purity is high of preparation.
Description
Technical field
The present invention relates to perovskite thin film preparation fields, and in particular to a kind of high-purity perovskite thin film preparation method.
Background technique
Organic metal lead halide perovskite material is since its solar spectrum response range is suitable for, the absorption coefficient of light is big, current-carrying
Transport factor is high and can use the excellent characteristics such as solwution method processing, has started the research heat of perovskite solar battery in photovoltaic art
Tide.Perovskite solar battery, by 3.8% initial photoelectric conversion efficiency, has been more than at present in short several years
22%.
As the light absorbing layer in device, perovskite thin film, which not only plays the role of absorption sunlight, will also complete photoproduction load
Flow the transport and separation of son.Therefore, the perovskite thin film for preparing high quality is further promotion perovskite solar cell properties
Key.
At present mainly using solwution method, including a step spin-coating method and two-step method.One step spin-coating method is common most simple
Single method for preparing perovskite thin film, but film is prepared using spin coating perovskite precursor solution, solution evaporation in heating process,
Film local contraction causes film surface hole occur, reduces film to the coverage of substrate.Two-step method is widely used in system
Machine metal halide perovskite thin film is had, can be good at the formation for controlling perovskite thin film, this method is first by PbI2Forerunner
Liquid solution is coated in fine and close TiO2Or porous TiO2In substrate, PbI is obtained after annealing2Film, then by PbI2It is thin film dipped
In the aqueous isopropanol of MAI, PbI is finally realized2To MAPbI3Perovskite transformation.But this method will lead to PbI2The cause of film
Close property and easy crystallinity improve, and limit CH3NH3I is to PbI2Diffusion, PbI in film2With CH3NH3It cannot completely be sent out between I
Raw reaction, usually there is remaining PbI in finally formed perovskite thin film2In the presence of, it will influence perovskite light absorbing layer and
The long-time stability of its photovoltaic device.
Therefore, one kind can be improved PbI2The preparation method of porosity and perovskite thin film purity out of film is known as solving to ask
The key of topic.
Summary of the invention
The purpose of the present invention is to provide a kind of high-purity perovskite thin film preparation methods, to PbI2Precursor solution applies
Electric pulse, to PbI2The growth of film is regulated and controled, and the PbI of porous structure is prepared2Film, and improve out porosity.
It is also an object of the present invention to provide a kind of high-purity perovskite thin film preparation methods, and it is thin to improve perovskite
The purity of film.
To achieve the above object, the present invention adopts the following technical scheme that, a kind of high-purity perovskite thin film preparation method, packet
It includes:
A, the PbI of 1mol/ml is prepared2Precursor solution；
B, by the PbI of 1mol/ml2Precursor solution is put into pulse electromagnetic field occurrence of equipment, in 300~500V of voltage,
Frequency is under 1~5Hz, and the burst length is 60s~80s；
It c, will be through extra pulse treated PbI2Precursor solution drops in ready substrate, and spin coating obtains PbI2It is thin
Film, spincoating conditions are 4000~5500rmp of speed, rotate 40~50s；
D, by PbI2Film heats on warm table, forms transparent faint yellow film；
E, the CH of 0.038mg/ml is prepared3NH3I solution；
F, the 0.038mg/ml CH of 100~120ul is measured with liquid-transfering gun3NH3I solution, drop coating are light obtained in the step e
On yellow film, spincoating conditions are 4000~4500rmp of speed, rotate 30~40s, obtain perovskite thin film；
G, perovskite thin film is heated on warm table, perovskite thin film is made to become dark-brown by yellow to get high-purity
Perovskite thin film；
Wherein, in stepb, the output waveform function of the electric pulse are as follows:
In formula, δ2For the pulse shaping factor, γ is the interelectrode distance m of electrical pulse device, and t is electrical pulse processing time s.
Preferably, the PbI of the 1mol/ml described in step a2The configuration method of precursor solution is, in the DMF of every ml
The PbI of 0.460~0.462g is added in solvent2, then at 65~75 DEG C, magnetic agitation 2~3 hours.
Preferably, in stepb, the voltage of Electric Pulse Treatment is 400V, and frequency is burst length 70s under 3Hz.
Preferably, in step c, spincoating conditions are speed 5000rmp, rotate 45s.
Preferably, in step d, the heating temperature is 65~75 DEG C, and heating time is 8~12min.
Preferably, in step e, the CH of the 0.038mg/ml3NH3The configuration method of I solution is, in the different of every ml
The CH of 0.036~0.039mg is added in propyl alcohol3NH3I, in 3~5min of ultrasonic disperse.
Preferably, in step f, spincoating conditions are speed 4300rmp, rotate 35s.
Preferably, in step g, the heating temperature is 90~110 DEG C, and heating time is 25~35min.
The beneficial effects of the present invention are: the perovskite thin film purity is high of preparation, remains without PbI2；Perovskite thin film surface
Crystal grain is uniform, has good electrical property.
Detailed description of the invention
Fig. 1 is PbI prepared by embodiment 12The SEM of film schemes；
Fig. 2 is PbI prepared by comparative example 12The SEM of film schemes；
Fig. 3 is PbI prepared by comparative example 22The SEM of film schemes；
Fig. 4 is PbI prepared by comparative example 32The SEM of film schemes；
Fig. 5 is the XRD diagram of the high-purity perovskite thin film prepared by embodiment 1；
Fig. 6 is the XRD diagram of the perovskite thin film of comparative example 1；
Fig. 7 is the SEM figure of the high-purity perovskite thin film prepared by embodiment 1；
Fig. 8 is that the SEM of the perovskite thin film prepared by comparative example 1 schemes；
Fig. 9 is that the SEM of the perovskite thin film prepared by comparative example 2 schemes；
Figure 10 is that the SEM of the perovskite thin film prepared by comparative example 3 schemes.
Specific embodiment
Invention is described in further detail with reference to the accompanying drawing, to enable those skilled in the art's refer to the instruction text
It can implement accordingly.
Embodiment 1
A, the PbI of 1mol/ml is prepared2Precursor solution: the PbI of 0.461g is added in the DMF solvent of every ml2, then 70
DEG C, magnetic agitation 2.5 hours.
B, by the PbI of 1mol/ml2Precursor solution is put into pulse electromagnetic field occurrence of equipment, in voltage 400V, frequency 3Hz
Under, burst length 70s, wherein the output waveform function of the electric pulse are as follows:
In formula, δ2For the pulse shaping factor, γ is the interelectrode distance m of electrical pulse device, and t is electrical pulse processing time s；
It c, will be through extra pulse treated PbI2Precursor solution drops in ready substrate, and spin coating obtains PbI2It is thin
Film, spincoating conditions are speed 5000rmp, rotate 45s；
D, by PbI2Film heats on warm table, forms transparent faint yellow film, and heating temperature is 70 DEG C, when heating
Between be 10min；
E, the CH of 0.038mg/ml is prepared3NH3The CH of 0.038mg is added in I solution in the isopropanol of every ml3NH3I,
Ultrasonic disperse 4min；
F, the 0.038mg/ml CH of 110ul is measured with liquid-transfering gun3NH3I solution, drop coating are faint yellow obtained in the step e
On film, spincoating conditions are speed 4200rmp, rotate 35s, obtain perovskite thin film,
In the process, it chemically reacts as follows:
PbI2+CH3NH3I=CH3NH3PbI3；
G, perovskite thin film is heated on warm table, perovskite thin film is made to become dark-brown by yellow to get high-purity
Perovskite thin film, heating temperature are 100 DEG C, heating time 30min.
Embodiment 2
A, the PbI of 1mol/ml is prepared2Precursor solution: the PbI of 0.460g is added in the DMF solvent of every ml2, then 75
DEG C, magnetic agitation 2 hours.
B, by the PbI of 1mol/ml2Precursor solution is put into pulse electromagnetic field occurrence of equipment, and in voltage 300V, frequency is
Under 5Hz, burst length 60s, wherein the output waveform function of the electric pulse are as follows:
In formula, δ2For the pulse shaping factor, γ is the interelectrode distance m of electrical pulse device, and t is electrical pulse processing time s；
It c, will be through extra pulse treated PbI2Precursor solution drops in ready substrate, and spin coating obtains PbI2It is thin
Film, spincoating conditions are speed 4000rmp, rotate 50s；
D, by PbI2Film heats on warm table, forms transparent faint yellow film, and heating temperature is 65 DEG C, when heating
Between be 12min；
E, the CH of 0.038mg/ml is prepared3NH3The CH of 0.036mg is added in I solution in the isopropanol of every ml3NH3I,
Ultrasonic disperse 5min；
F, the 0.038mg/ml CH of 110ul is measured with liquid-transfering gun3NH3I solution, drop coating are faint yellow obtained in the step e
On film, spincoating conditions are speed 4000rmp, rotate 40s, obtain perovskite thin film；
G, perovskite thin film is heated on warm table, perovskite thin film is made to become dark-brown by yellow to get high-purity
Perovskite thin film, heating temperature are 90 DEG C, heating time 35min.
Embodiment 3
A, the PbI of 1mol/ml is prepared2Precursor solution: the PbI of 0.462g is added in the DMF solvent of every ml2, then 65
DEG C, magnetic agitation 3 hours.
B, by the PbI of 1mol/ml2Precursor solution is put into pulse electromagnetic field occurrence of equipment, and in voltage 500V, frequency is
Under 1Hz, burst length 80s, wherein the output waveform function of the electric pulse are as follows:
In formula, δ2For the pulse shaping factor, γ is the interelectrode distance m of electrical pulse device, and t is electrical pulse processing time s；
It c, will be through extra pulse treated PbI2Precursor solution drops in ready substrate, and spin coating obtains PbI2It is thin
Film, spincoating conditions are speed 4000rmp, rotate 50s；
D, by PbI2Film heats on warm table, forms transparent faint yellow film, and heating temperature is 75 DEG C, when heating
Between be 8min；
E, the CH of 0.038mg/ml is prepared3NH3The CH of 0.036mg is added in I solution in the isopropanol of every ml3NH3I,
Ultrasonic disperse 3min；
F, the 0.038mg/ml CH of 110ul is measured with liquid-transfering gun3NH3I solution, drop coating are faint yellow obtained in the step e
On film, spincoating conditions are speed 4000rmp, rotate 40s, obtain perovskite thin film；
G, perovskite thin film is heated on warm table, perovskite thin film is made to become dark-brown by yellow to get high-purity
Perovskite thin film, heating temperature are 110 DEG C, heating time 25min.
Embodiment 4
A, the PbI of 1mol/ml is prepared2Precursor solution: the PbI of 0.4605g is added in the DMF solvent of every ml2, then
73 DEG C, magnetic agitation 2.2 hours.
B, by the PbI of 1mol/ml2Precursor solution is put into pulse electromagnetic field occurrence of equipment, and in voltage 350V, frequency is
Under 2Hz, burst length 65s, wherein the output waveform function of the electric pulse are as follows:
In formula, δ2For the pulse shaping factor, γ is the interelectrode distance m of electrical pulse device, and t is electrical pulse processing time s；
It c, will be through extra pulse treated PbI2Precursor solution drops in ready substrate, and spin coating obtains PbI2It is thin
Film, spincoating conditions are speed 4200rmp, rotate 43s；
D, by PbI2Film heats on warm table, forms transparent faint yellow film, and heating temperature is 68 DEG C, when heating
Between be 11min；
E, the CH of 0.038mg/ml is prepared3NH3The CH of 0.038mg is added in I solution in the isopropanol of every ml3NH3I,
Ultrasonic disperse 4min；
F, the 0.038mg/ml CH of 110ul is measured with liquid-transfering gun3NH3I solution, drop coating are faint yellow obtained in the step e
On film, spincoating conditions are speed 4200rmp, rotate 43s, obtain perovskite thin film；
G, perovskite thin film is heated on warm table, perovskite thin film is made to become dark-brown by yellow to get high-purity
Perovskite thin film, heating temperature are 98 DEG C, heating time 32min.
Embodiment 5
A, the PbI of 1mol/ml is prepared2Precursor solution: the PbI of 0.4615g is added in the DMF solvent of every ml2, then
68 DEG C, magnetic agitation 2.8 hours.
B, by the PbI of 1mol/ml2Precursor solution is put into pulse electromagnetic field occurrence of equipment, and in voltage 450V, frequency is
Under 4Hz, burst length 75s, wherein the output waveform function of the electric pulse are as follows:
In formula, δ2For the pulse shaping factor, γ is the interelectrode distance m of electrical pulse device, and t is electrical pulse processing time s；
It c, will be through extra pulse treated PbI2Precursor solution drops in ready substrate, and spin coating obtains PbI2It is thin
Film, spincoating conditions are speed 5300rmp, rotate 48s；
D, by PbI2Film heats on warm table, forms transparent faint yellow film, and heating temperature is 72 DEG C, when heating
Between be 9min；
E, the CH of 0.038mg/ml is prepared3NH3The CH of 0.0365mg is added in I solution in the isopropanol of every ml3NH3I,
Ultrasonic disperse 3.5min；
F, the 0.038mg/ml CH of 110ul is measured with liquid-transfering gun3NH3I solution, drop coating are faint yellow obtained in the step e
On film, spincoating conditions are speed 4800rmp, rotate 48s, obtain perovskite thin film；
G, perovskite thin film is heated on warm table, perovskite thin film is made to become dark-brown by yellow to get high-purity
Perovskite thin film, heating temperature are 108 DEG C, heating time 28min.
Comparative example 1
A, the PbI of 1mol/ml is prepared2Precursor solution: the PbI of 0.461g is added in the DMF solvent of every ml2, then 70
DEG C, magnetic agitation 2.5 hours.
B, by configured PbI2Precursor solution drops in ready substrate, and spin coating obtains PbI2Film, spin coating item
Part is speed 5000rmp, rotates 45s；
C, by PbI2Film heats on warm table, forms transparent faint yellow film, and heating temperature is 70 DEG C, when heating
Between be 10min；
D, the CH of 0.038mg/ml is prepared3NH3The CH of 0.038mg is added in I solution in the isopropanol of every ml3NH3I,
Ultrasonic disperse 4min；
E, the 0.038mg/ml CH of 110ul is measured with liquid-transfering gun3NH3I solution, drop coating are faint yellow obtained in the step e
On film, spincoating conditions are speed 4200rmp, rotate 35s, obtain perovskite thin film；
F, perovskite thin film is heated on warm table, perovskite thin film is made to become dark-brown by yellow to get high-purity
Perovskite thin film, heating temperature are 100 DEG C, heating time 30min.
Comparative example 2
A, the PbI of 1mol/ml is prepared2Precursor solution: the PbI of 0.461g is added in the DMF solvent of every ml2, then 70
DEG C, magnetic agitation 2.5 hours.
B, by the PbI of 1mol/ml2Precursor solution is put into pulse electromagnetic field occurrence of equipment, and in voltage 400V, frequency is
Under 3Hz, burst length 70s, wherein the output waveform function of the electric pulse are as follows:
In formula, δ2For the pulse shaping factor, γ is the interelectrode distance m of electrical pulse device, and t is electrical pulse processing time s；
It c, will be through extra pulse treated PbI2Precursor solution drops in ready substrate, and spin coating obtains PbI2It is thin
Film, spincoating conditions are speed 5000rmp, rotate 45s；
D, by PbI2Film heats on warm table, forms transparent faint yellow film, and heating temperature is 70 DEG C, when heating
Between be 10min；
E, the CH of 0.038mg/ml is prepared3NH3The CH of 0.038mg is added in I solution in the isopropanol of every ml3NH3I,
Ultrasonic disperse 4min；
F, the 0.038mg/ml CH of 110ul is measured with liquid-transfering gun3NH3I solution, drop coating are faint yellow obtained in the step e
On film, spincoating conditions are speed 4200rmp, rotate 35s, obtain perovskite thin film；
G, perovskite thin film is heated on warm table, perovskite thin film is made to become dark-brown by yellow to get high-purity
Perovskite thin film, heating temperature are 100 DEG C, heating time 30min.
Comparative example 3
A, the PbI of 1mol/ml is prepared2Precursor solution: the PbI of 0.461g is added in the DMF solvent of every ml2, then 70
DEG C, magnetic agitation 2.5 hours.
B, by the PbI of 1mol/ml2Precursor solution is put into pulse electromagnetic field occurrence of equipment, and in voltage 400V, frequency is
Under 3Hz, burst length 70s, wherein the output waveform function of the electric pulse are as follows:
In formula, δ2For the pulse shaping factor, γ is the interelectrode distance m of electrical pulse device, and t is electrical pulse processing time s；
It c, will be through extra pulse treated PbI2Precursor solution drops in ready substrate, and spin coating obtains PbI2It is thin
Film, spincoating conditions are speed 5000rmp, rotate 45s；
D, by PbI2Film heats on warm table, forms transparent faint yellow film, and heating temperature is 70 DEG C, when heating
Between be 10min；
E, the CH of 0.038mg/ml is prepared3NH3The CH of 0.038mg is added in I solution in the isopropanol of every ml3NH3I,
Ultrasonic disperse 4min；
F, the 0.038mg/ml CH of 110ul is measured with liquid-transfering gun3NH3I solution, drop coating are faint yellow obtained in the step e
On film, spincoating conditions are speed 4200rmp, rotate 35s, obtain perovskite thin film；
G, perovskite thin film is heated on warm table, perovskite thin film is made to become dark-brown by yellow, heating temperature is
100 DEG C, heating time is 30min to get perovskite thin film.
Data analysis
(1) PbI2Residual test
To by the PbI in embodiment 1-5 and comparative example 1-32The surface of film carries out SEM and tests to detect PbI2Film
Surface texture, testing result are shown in Table 1；
Table 1PbI2The surface texture of film
| Serial number | PbI2The surface texture of film |
| Embodiment 1 | Uniform porous structure |
| Embodiment 2 | Uniform porous structure |
| Embodiment 3 | Uniform porous structure |
| Embodiment 4 | Uniform porous structure |
| Embodiment 5 | Uniform porous structure |
| Comparative example 1 | Dense non-porous |
| Comparative example 2 | There is the laminated structure in a small amount of hole |
| Comparative example 3 | There is the laminated structure in a small amount of hole |
(2) XRD experiment is carried out to by the surface of the product in embodiment 1-5 and comparative example 1-3, to detect whether to exist
PbI2Residual, testing result are shown in Table 2；
Table 2 whether there is PbI2Residual
| Serial number | With the presence or absence of PbI2Residual residual |
| Embodiment 1 | It is no |
| Embodiment 2 | It is no |
| Embodiment 3 | It is no |
| Embodiment 4 | It is no |
| Embodiment 5 | It is no |
| Comparative example 1 | Have |
| Comparative example 2 | Have |
| Comparative example 3 | Have |
(3) SEM experiment is carried out to by the surface of the product in embodiment 1-5 and comparative example 1-3, with the table of testing product
The grain properties in face, acquired results are shown in Table 3；
The grain properties on the surface of 3 product of table
| Serial number | The grain properties on the surface of product |
| Embodiment 1 | Granulation uniformity is good |
| Embodiment 2 | Granulation uniformity is good |
| Embodiment 3 | Granulation uniformity is good |
| Embodiment 4 | Granulation uniformity is good |
| Embodiment 5 | Granulation uniformity is good |
| Comparative example 1 | Granular size is very inhomogenous |
| Comparative example 2 | Granulation uniformity is poor |
| Comparative example 3 | Granulation uniformity is poor |
Fig. 1 is PbI prepared by embodiment 12The SEM of film schemes, and as seen from Figure 1, handles by the method for the present invention
PbI2Film has uniform porous structure；Fig. 2 is PbI prepared by comparative example 12The SEM of film schemes, as seen from Figure 2, warp
Cross the PbI without Electric Pulse Treatment2Film dense non-porous；Fig. 3 and Fig. 4 is PbI prepared by comparative example 2 and comparative example 32Film
SEM figure, although it can be seen from Fig. 3 and Fig. 4 after Electric Pulse Treatment have certain micropore, due to electric pulse
Waveform selection it is undesirable, cause in there is the laminated structure in a small amount of hole, performance is undesirable.
Fig. 5 is the XRD diagram of the high-purity perovskite thin film prepared by embodiment 1, can clearly see and haunt from XRD diagram
There is PbI2Peak value, it is possible thereby to estimate no PbI2Residual；Fig. 6 is the XRD diagram of the perovskite thin film of comparative example 1, it can be seen that
There is PbI in XRD diagram without the perovskite thin film of Electric Pulse Treatment2Peak value, have PbI2Residual.
Fig. 7 is the SEM figure of the high-purity perovskite thin film prepared by embodiment 1, be can be clearly seen that by Fig. 7, by this
The high-purity perovskite thin film surface particles uniformity of inventive method preparation is good, and Fig. 8 is thin for the perovskite prepared by comparative example 1
The SEM of film schemes, and can be clearly seen that by Fig. 8, very inhomogenous by titanium ore film surface particle；Fig. 9 and Figure 10 are respectively
The SEM of the perovskite thin film of comparative example 2 and comparative example 3 schemes, and can be clearly seen that by Fig. 9 and Figure 10, by titanium ore film table
The uniformity of face particle is slightly good compared with Fig. 8, but effect is not so good as Fig. 7.
Although the embodiments of the present invention have been disclosed as above, but its is not only in the description and the implementation listed
With it can be fully applied to various fields suitable for the present invention, for those skilled in the art, can be easily
Realize other modification, therefore without departing from the general concept defined in the claims and the equivalent scope, the present invention is simultaneously unlimited
In specific details and legend shown and described herein.
Claims (8)
1. a kind of high-purity perovskite thin film preparation method, includes:
A, the PbI of 1mol/ml is prepared2Precursor solution；
B, by the PbI of 1mol/ml2Precursor solution is put into pulse electromagnetic field occurrence of equipment, and in 300~500V of voltage, frequency is
Under 1~5Hz, the burst length is 60s~80s；
It c, will be through extra pulse treated PbI2Precursor solution drops in ready substrate, and spin coating obtains PbI2Film, rotation
Painting condition is 4000~5500rmp of speed, rotates 40~50s；
D, by PbI2Film heats on warm table, forms transparent faint yellow film；
E, the CH of 0.038mg/ml is prepared3NH3I solution；
F, the 0.038mg/ml CH of 100~120ul is measured with liquid-transfering gun3NH3I solution, drop coating are faint yellow obtained in the step e
On film, spincoating conditions are 4000~4500rmp of speed, rotate 30~40s, obtain perovskite thin film；
G, perovskite thin film is heated on warm table, perovskite thin film is made to become dark-brown by yellow to get high-purity calcium titanium
Mine film；
Wherein, in stepb, the output waveform function of the electric pulse are as follows:
In formula, δ2For the pulse shaping factor, γ is the interelectrode distance m of electrical pulse device, and t is electrical pulse processing time s.
2. high-purity perovskite thin film preparation method according to claim 1, it is characterised in that: described in step a
The PbI of 1mol/ml2The configuration method of precursor solution is that the PbI of 0.460~0.462g is added in every mlDMF solvent2, then
At 65~75 DEG C, magnetic agitation 2~3 hours.
3. high-purity perovskite thin film preparation method according to claim 1, it is characterised in that: in stepb, electric pulse
The voltage of processing is 400V, and frequency is burst length 70s under 3Hz.
4. high-purity perovskite thin film preparation method according to claim 1, it is characterised in that: in step c, spin coating item
Part is speed 5000rmp, rotates 45s.
5. high-purity perovskite thin film preparation method according to claim 1, it is characterised in that: described to add in step d
Hot temperature is 65~75 DEG C, and heating time is 8~12min.
6. high-purity perovskite thin film preparation method according to claim 1, it is characterised in that: described in step e
The CH of 0.038mg/ml3NH3The configuration method of I solution is that the CH of 0.038mg is added in the isopropanol of every ml3NH3I, super
Sound disperses 3~5min.
7. high-purity perovskite thin film preparation method according to claim 1, it is characterised in that: in step f, spin coating item
Part is speed 4300rmp, rotates 35s.
8. high-purity perovskite thin film preparation method according to claim 1, it is characterised in that: described to add in step g
Hot temperature is 90~110 DEG C, and heating time is 25~35min.
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