CN109037459A - A kind of high-purity perovskite thin film preparation method - Google Patents

A kind of high-purity perovskite thin film preparation method Download PDF

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CN109037459A
CN109037459A CN201810875565.2A CN201810875565A CN109037459A CN 109037459 A CN109037459 A CN 109037459A CN 201810875565 A CN201810875565 A CN 201810875565A CN 109037459 A CN109037459 A CN 109037459A
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thin film
pbi
perovskite thin
film
purity
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CN109037459B (en
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董欢
唐立丹
王冰
齐锦刚
刘亮
彭淑静
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Liaoning University of Technology
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0001Processes specially adapted for the manufacture or treatment of devices or of parts thereof
    • H01L51/0002Deposition of organic semiconductor materials on a substrate
    • H01L51/0003Deposition of organic semiconductor materials on a substrate using liquid deposition, e.g. spin coating
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
    • H01L51/0077Coordination compounds, e.g. porphyrin

Abstract

The invention discloses a kind of high-purity perovskite thin film preparation methods.It include: a, the PbI for preparing 1mol/ml2Precursor solution;B, apply electric pulse;It c, will be through extra pulse treated PbI2Precursor solution drops in ready substrate, and spin coating obtains PbI2Film;D, by PbI2Film heats on warm table, forms transparent faint yellow film;E, the CH of 0.038mg/ml is prepared3NH3I solution;F, the 0.038mg/ml CH of 100~120ul is measured with liquid-transfering gun3NH3I solution, drop coating is on the faint yellow film obtained in step e;G, perovskite thin film is heated on warm table, perovskite thin film is made to become dark-brown by yellow to get high-purity perovskite thin film.The beneficial effects of the present invention are: the perovskite thin film purity is high of preparation.

Description

A kind of high-purity perovskite thin film preparation method
Technical field
The present invention relates to perovskite thin film preparation fields, and in particular to a kind of high-purity perovskite thin film preparation method.
Background technique
Organic metal lead halide perovskite material is since its solar spectrum response range is suitable for, the absorption coefficient of light is big, current-carrying Transport factor is high and can use the excellent characteristics such as solwution method processing, has started the research heat of perovskite solar battery in photovoltaic art Tide.Perovskite solar battery, by 3.8% initial photoelectric conversion efficiency, has been more than at present in short several years 22%.
As the light absorbing layer in device, perovskite thin film, which not only plays the role of absorption sunlight, will also complete photoproduction load Flow the transport and separation of son.Therefore, the perovskite thin film for preparing high quality is further promotion perovskite solar cell properties Key.
At present mainly using solwution method, including a step spin-coating method and two-step method.One step spin-coating method is common most simple Single method for preparing perovskite thin film, but film is prepared using spin coating perovskite precursor solution, solution evaporation in heating process, Film local contraction causes film surface hole occur, reduces film to the coverage of substrate.Two-step method is widely used in system Machine metal halide perovskite thin film is had, can be good at the formation for controlling perovskite thin film, this method is first by PbI2Forerunner Liquid solution is coated in fine and close TiO2Or porous TiO2In substrate, PbI is obtained after annealing2Film, then by PbI2It is thin film dipped In the aqueous isopropanol of MAI, PbI is finally realized2To MAPbI3Perovskite transformation.But this method will lead to PbI2The cause of film Close property and easy crystallinity improve, and limit CH3NH3I is to PbI2Diffusion, PbI in film2With CH3NH3It cannot completely be sent out between I Raw reaction, usually there is remaining PbI in finally formed perovskite thin film2In the presence of, it will influence perovskite light absorbing layer and The long-time stability of its photovoltaic device.
Therefore, one kind can be improved PbI2The preparation method of porosity and perovskite thin film purity out of film is known as solving to ask The key of topic.
Summary of the invention
The purpose of the present invention is to provide a kind of high-purity perovskite thin film preparation methods, to PbI2Precursor solution applies Electric pulse, to PbI2The growth of film is regulated and controled, and the PbI of porous structure is prepared2Film, and improve out porosity.
It is also an object of the present invention to provide a kind of high-purity perovskite thin film preparation methods, and it is thin to improve perovskite The purity of film.
To achieve the above object, the present invention adopts the following technical scheme that, a kind of high-purity perovskite thin film preparation method, packet It includes:
A, the PbI of 1mol/ml is prepared2Precursor solution;
B, by the PbI of 1mol/ml2Precursor solution is put into pulse electromagnetic field occurrence of equipment, in 300~500V of voltage, Frequency is under 1~5Hz, and the burst length is 60s~80s;
It c, will be through extra pulse treated PbI2Precursor solution drops in ready substrate, and spin coating obtains PbI2It is thin Film, spincoating conditions are 4000~5500rmp of speed, rotate 40~50s;
D, by PbI2Film heats on warm table, forms transparent faint yellow film;
E, the CH of 0.038mg/ml is prepared3NH3I solution;
F, the 0.038mg/ml CH of 100~120ul is measured with liquid-transfering gun3NH3I solution, drop coating are light obtained in the step e On yellow film, spincoating conditions are 4000~4500rmp of speed, rotate 30~40s, obtain perovskite thin film;
G, perovskite thin film is heated on warm table, perovskite thin film is made to become dark-brown by yellow to get high-purity Perovskite thin film;
Wherein, in stepb, the output waveform function of the electric pulse are as follows:
In formula, δ2For the pulse shaping factor, γ is the interelectrode distance m of electrical pulse device, and t is electrical pulse processing time s.
Preferably, the PbI of the 1mol/ml described in step a2The configuration method of precursor solution is, in the DMF of every ml The PbI of 0.460~0.462g is added in solvent2, then at 65~75 DEG C, magnetic agitation 2~3 hours.
Preferably, in stepb, the voltage of Electric Pulse Treatment is 400V, and frequency is burst length 70s under 3Hz.
Preferably, in step c, spincoating conditions are speed 5000rmp, rotate 45s.
Preferably, in step d, the heating temperature is 65~75 DEG C, and heating time is 8~12min.
Preferably, in step e, the CH of the 0.038mg/ml3NH3The configuration method of I solution is, in the different of every ml The CH of 0.036~0.039mg is added in propyl alcohol3NH3I, in 3~5min of ultrasonic disperse.
Preferably, in step f, spincoating conditions are speed 4300rmp, rotate 35s.
Preferably, in step g, the heating temperature is 90~110 DEG C, and heating time is 25~35min.
The beneficial effects of the present invention are: the perovskite thin film purity is high of preparation, remains without PbI2;Perovskite thin film surface Crystal grain is uniform, has good electrical property.
Detailed description of the invention
Fig. 1 is PbI prepared by embodiment 12The SEM of film schemes;
Fig. 2 is PbI prepared by comparative example 12The SEM of film schemes;
Fig. 3 is PbI prepared by comparative example 22The SEM of film schemes;
Fig. 4 is PbI prepared by comparative example 32The SEM of film schemes;
Fig. 5 is the XRD diagram of the high-purity perovskite thin film prepared by embodiment 1;
Fig. 6 is the XRD diagram of the perovskite thin film of comparative example 1;
Fig. 7 is the SEM figure of the high-purity perovskite thin film prepared by embodiment 1;
Fig. 8 is that the SEM of the perovskite thin film prepared by comparative example 1 schemes;
Fig. 9 is that the SEM of the perovskite thin film prepared by comparative example 2 schemes;
Figure 10 is that the SEM of the perovskite thin film prepared by comparative example 3 schemes.
Specific embodiment
Invention is described in further detail with reference to the accompanying drawing, to enable those skilled in the art's refer to the instruction text It can implement accordingly.
Embodiment 1
A, the PbI of 1mol/ml is prepared2Precursor solution: the PbI of 0.461g is added in the DMF solvent of every ml2, then 70 DEG C, magnetic agitation 2.5 hours.
B, by the PbI of 1mol/ml2Precursor solution is put into pulse electromagnetic field occurrence of equipment, in voltage 400V, frequency 3Hz Under, burst length 70s, wherein the output waveform function of the electric pulse are as follows:
In formula, δ2For the pulse shaping factor, γ is the interelectrode distance m of electrical pulse device, and t is electrical pulse processing time s;
It c, will be through extra pulse treated PbI2Precursor solution drops in ready substrate, and spin coating obtains PbI2It is thin Film, spincoating conditions are speed 5000rmp, rotate 45s;
D, by PbI2Film heats on warm table, forms transparent faint yellow film, and heating temperature is 70 DEG C, when heating Between be 10min;
E, the CH of 0.038mg/ml is prepared3NH3The CH of 0.038mg is added in I solution in the isopropanol of every ml3NH3I, Ultrasonic disperse 4min;
F, the 0.038mg/ml CH of 110ul is measured with liquid-transfering gun3NH3I solution, drop coating are faint yellow obtained in the step e On film, spincoating conditions are speed 4200rmp, rotate 35s, obtain perovskite thin film,
In the process, it chemically reacts as follows:
PbI2+CH3NH3I=CH3NH3PbI3
G, perovskite thin film is heated on warm table, perovskite thin film is made to become dark-brown by yellow to get high-purity Perovskite thin film, heating temperature are 100 DEG C, heating time 30min.
Embodiment 2
A, the PbI of 1mol/ml is prepared2Precursor solution: the PbI of 0.460g is added in the DMF solvent of every ml2, then 75 DEG C, magnetic agitation 2 hours.
B, by the PbI of 1mol/ml2Precursor solution is put into pulse electromagnetic field occurrence of equipment, and in voltage 300V, frequency is Under 5Hz, burst length 60s, wherein the output waveform function of the electric pulse are as follows:
In formula, δ2For the pulse shaping factor, γ is the interelectrode distance m of electrical pulse device, and t is electrical pulse processing time s;
It c, will be through extra pulse treated PbI2Precursor solution drops in ready substrate, and spin coating obtains PbI2It is thin Film, spincoating conditions are speed 4000rmp, rotate 50s;
D, by PbI2Film heats on warm table, forms transparent faint yellow film, and heating temperature is 65 DEG C, when heating Between be 12min;
E, the CH of 0.038mg/ml is prepared3NH3The CH of 0.036mg is added in I solution in the isopropanol of every ml3NH3I, Ultrasonic disperse 5min;
F, the 0.038mg/ml CH of 110ul is measured with liquid-transfering gun3NH3I solution, drop coating are faint yellow obtained in the step e On film, spincoating conditions are speed 4000rmp, rotate 40s, obtain perovskite thin film;
G, perovskite thin film is heated on warm table, perovskite thin film is made to become dark-brown by yellow to get high-purity Perovskite thin film, heating temperature are 90 DEG C, heating time 35min.
Embodiment 3
A, the PbI of 1mol/ml is prepared2Precursor solution: the PbI of 0.462g is added in the DMF solvent of every ml2, then 65 DEG C, magnetic agitation 3 hours.
B, by the PbI of 1mol/ml2Precursor solution is put into pulse electromagnetic field occurrence of equipment, and in voltage 500V, frequency is Under 1Hz, burst length 80s, wherein the output waveform function of the electric pulse are as follows:
In formula, δ2For the pulse shaping factor, γ is the interelectrode distance m of electrical pulse device, and t is electrical pulse processing time s;
It c, will be through extra pulse treated PbI2Precursor solution drops in ready substrate, and spin coating obtains PbI2It is thin Film, spincoating conditions are speed 4000rmp, rotate 50s;
D, by PbI2Film heats on warm table, forms transparent faint yellow film, and heating temperature is 75 DEG C, when heating Between be 8min;
E, the CH of 0.038mg/ml is prepared3NH3The CH of 0.036mg is added in I solution in the isopropanol of every ml3NH3I, Ultrasonic disperse 3min;
F, the 0.038mg/ml CH of 110ul is measured with liquid-transfering gun3NH3I solution, drop coating are faint yellow obtained in the step e On film, spincoating conditions are speed 4000rmp, rotate 40s, obtain perovskite thin film;
G, perovskite thin film is heated on warm table, perovskite thin film is made to become dark-brown by yellow to get high-purity Perovskite thin film, heating temperature are 110 DEG C, heating time 25min.
Embodiment 4
A, the PbI of 1mol/ml is prepared2Precursor solution: the PbI of 0.4605g is added in the DMF solvent of every ml2, then 73 DEG C, magnetic agitation 2.2 hours.
B, by the PbI of 1mol/ml2Precursor solution is put into pulse electromagnetic field occurrence of equipment, and in voltage 350V, frequency is Under 2Hz, burst length 65s, wherein the output waveform function of the electric pulse are as follows:
In formula, δ2For the pulse shaping factor, γ is the interelectrode distance m of electrical pulse device, and t is electrical pulse processing time s;
It c, will be through extra pulse treated PbI2Precursor solution drops in ready substrate, and spin coating obtains PbI2It is thin Film, spincoating conditions are speed 4200rmp, rotate 43s;
D, by PbI2Film heats on warm table, forms transparent faint yellow film, and heating temperature is 68 DEG C, when heating Between be 11min;
E, the CH of 0.038mg/ml is prepared3NH3The CH of 0.038mg is added in I solution in the isopropanol of every ml3NH3I, Ultrasonic disperse 4min;
F, the 0.038mg/ml CH of 110ul is measured with liquid-transfering gun3NH3I solution, drop coating are faint yellow obtained in the step e On film, spincoating conditions are speed 4200rmp, rotate 43s, obtain perovskite thin film;
G, perovskite thin film is heated on warm table, perovskite thin film is made to become dark-brown by yellow to get high-purity Perovskite thin film, heating temperature are 98 DEG C, heating time 32min.
Embodiment 5
A, the PbI of 1mol/ml is prepared2Precursor solution: the PbI of 0.4615g is added in the DMF solvent of every ml2, then 68 DEG C, magnetic agitation 2.8 hours.
B, by the PbI of 1mol/ml2Precursor solution is put into pulse electromagnetic field occurrence of equipment, and in voltage 450V, frequency is Under 4Hz, burst length 75s, wherein the output waveform function of the electric pulse are as follows:
In formula, δ2For the pulse shaping factor, γ is the interelectrode distance m of electrical pulse device, and t is electrical pulse processing time s;
It c, will be through extra pulse treated PbI2Precursor solution drops in ready substrate, and spin coating obtains PbI2It is thin Film, spincoating conditions are speed 5300rmp, rotate 48s;
D, by PbI2Film heats on warm table, forms transparent faint yellow film, and heating temperature is 72 DEG C, when heating Between be 9min;
E, the CH of 0.038mg/ml is prepared3NH3The CH of 0.0365mg is added in I solution in the isopropanol of every ml3NH3I, Ultrasonic disperse 3.5min;
F, the 0.038mg/ml CH of 110ul is measured with liquid-transfering gun3NH3I solution, drop coating are faint yellow obtained in the step e On film, spincoating conditions are speed 4800rmp, rotate 48s, obtain perovskite thin film;
G, perovskite thin film is heated on warm table, perovskite thin film is made to become dark-brown by yellow to get high-purity Perovskite thin film, heating temperature are 108 DEG C, heating time 28min.
Comparative example 1
A, the PbI of 1mol/ml is prepared2Precursor solution: the PbI of 0.461g is added in the DMF solvent of every ml2, then 70 DEG C, magnetic agitation 2.5 hours.
B, by configured PbI2Precursor solution drops in ready substrate, and spin coating obtains PbI2Film, spin coating item Part is speed 5000rmp, rotates 45s;
C, by PbI2Film heats on warm table, forms transparent faint yellow film, and heating temperature is 70 DEG C, when heating Between be 10min;
D, the CH of 0.038mg/ml is prepared3NH3The CH of 0.038mg is added in I solution in the isopropanol of every ml3NH3I, Ultrasonic disperse 4min;
E, the 0.038mg/ml CH of 110ul is measured with liquid-transfering gun3NH3I solution, drop coating are faint yellow obtained in the step e On film, spincoating conditions are speed 4200rmp, rotate 35s, obtain perovskite thin film;
F, perovskite thin film is heated on warm table, perovskite thin film is made to become dark-brown by yellow to get high-purity Perovskite thin film, heating temperature are 100 DEG C, heating time 30min.
Comparative example 2
A, the PbI of 1mol/ml is prepared2Precursor solution: the PbI of 0.461g is added in the DMF solvent of every ml2, then 70 DEG C, magnetic agitation 2.5 hours.
B, by the PbI of 1mol/ml2Precursor solution is put into pulse electromagnetic field occurrence of equipment, and in voltage 400V, frequency is Under 3Hz, burst length 70s, wherein the output waveform function of the electric pulse are as follows:
In formula, δ2For the pulse shaping factor, γ is the interelectrode distance m of electrical pulse device, and t is electrical pulse processing time s;
It c, will be through extra pulse treated PbI2Precursor solution drops in ready substrate, and spin coating obtains PbI2It is thin Film, spincoating conditions are speed 5000rmp, rotate 45s;
D, by PbI2Film heats on warm table, forms transparent faint yellow film, and heating temperature is 70 DEG C, when heating Between be 10min;
E, the CH of 0.038mg/ml is prepared3NH3The CH of 0.038mg is added in I solution in the isopropanol of every ml3NH3I, Ultrasonic disperse 4min;
F, the 0.038mg/ml CH of 110ul is measured with liquid-transfering gun3NH3I solution, drop coating are faint yellow obtained in the step e On film, spincoating conditions are speed 4200rmp, rotate 35s, obtain perovskite thin film;
G, perovskite thin film is heated on warm table, perovskite thin film is made to become dark-brown by yellow to get high-purity Perovskite thin film, heating temperature are 100 DEG C, heating time 30min.
Comparative example 3
A, the PbI of 1mol/ml is prepared2Precursor solution: the PbI of 0.461g is added in the DMF solvent of every ml2, then 70 DEG C, magnetic agitation 2.5 hours.
B, by the PbI of 1mol/ml2Precursor solution is put into pulse electromagnetic field occurrence of equipment, and in voltage 400V, frequency is Under 3Hz, burst length 70s, wherein the output waveform function of the electric pulse are as follows:
In formula, δ2For the pulse shaping factor, γ is the interelectrode distance m of electrical pulse device, and t is electrical pulse processing time s;
It c, will be through extra pulse treated PbI2Precursor solution drops in ready substrate, and spin coating obtains PbI2It is thin Film, spincoating conditions are speed 5000rmp, rotate 45s;
D, by PbI2Film heats on warm table, forms transparent faint yellow film, and heating temperature is 70 DEG C, when heating Between be 10min;
E, the CH of 0.038mg/ml is prepared3NH3The CH of 0.038mg is added in I solution in the isopropanol of every ml3NH3I, Ultrasonic disperse 4min;
F, the 0.038mg/ml CH of 110ul is measured with liquid-transfering gun3NH3I solution, drop coating are faint yellow obtained in the step e On film, spincoating conditions are speed 4200rmp, rotate 35s, obtain perovskite thin film;
G, perovskite thin film is heated on warm table, perovskite thin film is made to become dark-brown by yellow, heating temperature is 100 DEG C, heating time is 30min to get perovskite thin film.
Data analysis
(1) PbI2Residual test
To by the PbI in embodiment 1-5 and comparative example 1-32The surface of film carries out SEM and tests to detect PbI2Film Surface texture, testing result are shown in Table 1;
Table 1PbI2The surface texture of film
Serial number PbI2The surface texture of film
Embodiment 1 Uniform porous structure
Embodiment 2 Uniform porous structure
Embodiment 3 Uniform porous structure
Embodiment 4 Uniform porous structure
Embodiment 5 Uniform porous structure
Comparative example 1 Dense non-porous
Comparative example 2 There is the laminated structure in a small amount of hole
Comparative example 3 There is the laminated structure in a small amount of hole
(2) XRD experiment is carried out to by the surface of the product in embodiment 1-5 and comparative example 1-3, to detect whether to exist PbI2Residual, testing result are shown in Table 2;
Table 2 whether there is PbI2Residual
Serial number With the presence or absence of PbI2Residual residual
Embodiment 1 It is no
Embodiment 2 It is no
Embodiment 3 It is no
Embodiment 4 It is no
Embodiment 5 It is no
Comparative example 1 Have
Comparative example 2 Have
Comparative example 3 Have
(3) SEM experiment is carried out to by the surface of the product in embodiment 1-5 and comparative example 1-3, with the table of testing product The grain properties in face, acquired results are shown in Table 3;
The grain properties on the surface of 3 product of table
Serial number The grain properties on the surface of product
Embodiment 1 Granulation uniformity is good
Embodiment 2 Granulation uniformity is good
Embodiment 3 Granulation uniformity is good
Embodiment 4 Granulation uniformity is good
Embodiment 5 Granulation uniformity is good
Comparative example 1 Granular size is very inhomogenous
Comparative example 2 Granulation uniformity is poor
Comparative example 3 Granulation uniformity is poor
Fig. 1 is PbI prepared by embodiment 12The SEM of film schemes, and as seen from Figure 1, handles by the method for the present invention PbI2Film has uniform porous structure;Fig. 2 is PbI prepared by comparative example 12The SEM of film schemes, as seen from Figure 2, warp Cross the PbI without Electric Pulse Treatment2Film dense non-porous;Fig. 3 and Fig. 4 is PbI prepared by comparative example 2 and comparative example 32Film SEM figure, although it can be seen from Fig. 3 and Fig. 4 after Electric Pulse Treatment have certain micropore, due to electric pulse Waveform selection it is undesirable, cause in there is the laminated structure in a small amount of hole, performance is undesirable.
Fig. 5 is the XRD diagram of the high-purity perovskite thin film prepared by embodiment 1, can clearly see and haunt from XRD diagram There is PbI2Peak value, it is possible thereby to estimate no PbI2Residual;Fig. 6 is the XRD diagram of the perovskite thin film of comparative example 1, it can be seen that There is PbI in XRD diagram without the perovskite thin film of Electric Pulse Treatment2Peak value, have PbI2Residual.
Fig. 7 is the SEM figure of the high-purity perovskite thin film prepared by embodiment 1, be can be clearly seen that by Fig. 7, by this The high-purity perovskite thin film surface particles uniformity of inventive method preparation is good, and Fig. 8 is thin for the perovskite prepared by comparative example 1 The SEM of film schemes, and can be clearly seen that by Fig. 8, very inhomogenous by titanium ore film surface particle;Fig. 9 and Figure 10 are respectively The SEM of the perovskite thin film of comparative example 2 and comparative example 3 schemes, and can be clearly seen that by Fig. 9 and Figure 10, by titanium ore film table The uniformity of face particle is slightly good compared with Fig. 8, but effect is not so good as Fig. 7.
Although the embodiments of the present invention have been disclosed as above, but its is not only in the description and the implementation listed With it can be fully applied to various fields suitable for the present invention, for those skilled in the art, can be easily Realize other modification, therefore without departing from the general concept defined in the claims and the equivalent scope, the present invention is simultaneously unlimited In specific details and legend shown and described herein.

Claims (8)

1. a kind of high-purity perovskite thin film preparation method, includes:
A, the PbI of 1mol/ml is prepared2Precursor solution;
B, by the PbI of 1mol/ml2Precursor solution is put into pulse electromagnetic field occurrence of equipment, and in 300~500V of voltage, frequency is Under 1~5Hz, the burst length is 60s~80s;
It c, will be through extra pulse treated PbI2Precursor solution drops in ready substrate, and spin coating obtains PbI2Film, rotation Painting condition is 4000~5500rmp of speed, rotates 40~50s;
D, by PbI2Film heats on warm table, forms transparent faint yellow film;
E, the CH of 0.038mg/ml is prepared3NH3I solution;
F, the 0.038mg/ml CH of 100~120ul is measured with liquid-transfering gun3NH3I solution, drop coating are faint yellow obtained in the step e On film, spincoating conditions are 4000~4500rmp of speed, rotate 30~40s, obtain perovskite thin film;
G, perovskite thin film is heated on warm table, perovskite thin film is made to become dark-brown by yellow to get high-purity calcium titanium Mine film;
Wherein, in stepb, the output waveform function of the electric pulse are as follows:
In formula, δ2For the pulse shaping factor, γ is the interelectrode distance m of electrical pulse device, and t is electrical pulse processing time s.
2. high-purity perovskite thin film preparation method according to claim 1, it is characterised in that: described in step a The PbI of 1mol/ml2The configuration method of precursor solution is that the PbI of 0.460~0.462g is added in every mlDMF solvent2, then At 65~75 DEG C, magnetic agitation 2~3 hours.
3. high-purity perovskite thin film preparation method according to claim 1, it is characterised in that: in stepb, electric pulse The voltage of processing is 400V, and frequency is burst length 70s under 3Hz.
4. high-purity perovskite thin film preparation method according to claim 1, it is characterised in that: in step c, spin coating item Part is speed 5000rmp, rotates 45s.
5. high-purity perovskite thin film preparation method according to claim 1, it is characterised in that: described to add in step d Hot temperature is 65~75 DEG C, and heating time is 8~12min.
6. high-purity perovskite thin film preparation method according to claim 1, it is characterised in that: described in step e The CH of 0.038mg/ml3NH3The configuration method of I solution is that the CH of 0.038mg is added in the isopropanol of every ml3NH3I, super Sound disperses 3~5min.
7. high-purity perovskite thin film preparation method according to claim 1, it is characterised in that: in step f, spin coating item Part is speed 4300rmp, rotates 35s.
8. high-purity perovskite thin film preparation method according to claim 1, it is characterised in that: described to add in step g Hot temperature is 90~110 DEG C, and heating time is 25~35min.
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Cited By (1)

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Publication number Priority date Publication date Assignee Title
CN110649161A (en) * 2019-09-16 2020-01-03 北京航空航天大学 Method for preparing high-purity and high-flatness perovskite film by using mixed solvent

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