CN109037377B - Light pipe interpenetrating internal lighting solar cell - Google Patents
Light pipe interpenetrating internal lighting solar cell Download PDFInfo
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- CN109037377B CN109037377B CN201810870636.XA CN201810870636A CN109037377B CN 109037377 B CN109037377 B CN 109037377B CN 201810870636 A CN201810870636 A CN 201810870636A CN 109037377 B CN109037377 B CN 109037377B
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- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000013307 optical fiber Substances 0.000 claims abstract description 23
- 238000006243 chemical reaction Methods 0.000 claims abstract description 8
- 238000005286 illumination Methods 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000003792 electrolyte Substances 0.000 claims description 7
- 238000001228 spectrum Methods 0.000 abstract description 3
- 238000000149 argon plasma sintering Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 50
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 14
- 239000010409 thin film Substances 0.000 description 12
- 239000010410 layer Substances 0.000 description 7
- 239000004408 titanium dioxide Substances 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 230000002238 attenuated effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920006280 packaging film Polymers 0.000 description 2
- 239000012785 packaging film Substances 0.000 description 2
- 230000029553 photosynthesis Effects 0.000 description 2
- 238000010672 photosynthesis Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009533 lab test Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002121 nanofiber Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Hybrid Cells (AREA)
Abstract
The invention discloses a light pipe interpenetrating internal lighting solar cell, which is characterized in that: the light anode film is arranged on the substrate, the blank position of the substrate is used for introducing sunlight which does not irradiate the film into the light anode film through the light guide pipe, and the sunlight which does not irradiate the anode film is recovered through the optical fiber. Sunlight enters the nano scattering tube after being totally reflected in the nano optical fibers at the two ends, and is transmitted into the photo-anode film in the nano scattering tube through light scattering; the light guide pipe consists of two ends of nano optical fiber and a middle nano scattering pipe, forms a photo-anode substrate together with the anode film, and forms a solar cell together with the photo-cathode substrate and the like. The invention has the advantages that: sunlight which does not irradiate the photo-anode film on the photo-anode substrate is recovered through the light guide pipe, and the full spectrum of the sunlight is introduced into the photo-anode film, so that the photo-anode film receives more sunlight, and the photoelectric conversion efficiency of the solar cell is improved.
Description
Technical Field
The invention relates to the field of solar cell preparation, in particular to a light pipe interpenetrating internal lighting solar cell, a preparation method and contents thereof.
Background
The solar cell is of various types, mainly simulating the photosynthesis principle, wherein the film preparation of the solar cell is crucial. The preparation of the film promotes the solar cell to simulate the photosynthesis of plants in the nature by utilizing solar energy at lower cost, and the solar energy is converted into electric energy.
The photoelectric conversion process in the solar cell is complicated, and the factors determining the photoelectric conversion efficiency are many, wherein the selection of the anode thin film is a crucial part. Early research in this regard was mainly focused on flat-plate electrodes, which had the major disadvantage that only a single layer of dye molecules could be adsorbed on the surface of the electrode, and the efficiency of absorbing sunlight was very low, and the photoelectric conversion efficiency could not be improved. In order to overcome the defects of a single-layer dye, a nano-porous titanium dioxide film conductive film is introduced later, so that the whole semiconductor film like a sponge has a large internal surface area and can absorb more dye monomolecular layers, the defect that the original battery can only absorb the monomolecular layers and absorb a small amount of sunlight is overcome, the sunlight can be reflected in the film for multiple times, the sunlight is repeatedly absorbed, and a larger photocurrent can be generated.
Although the photoelectric conversion efficiency is improved when the sunlight irradiates the porous film, the sunlight intensity is exponentially attenuated due to the strong absorption of the sunlight by the dye, some electrolyte and the like, and the original porous film has a certain thickness, so the sunlight hardly irradiates the tail end of the film. The existing solution is to add a large-particle reflective layer at the rear end of the surface of the film, but this reflective layer refracts the attenuated light back into the film. The folded light intensity is weak, and meanwhile, because the front section absorbs the maximum absorption spectrum completely, some red light with weak absorption and long wavelength is left, and the full-spectrum sunlight transmitted by the novel film of the invention is not achieved; in addition, due to the requirement of the traditional solar cell packaging electrolyte, a blank part except for the film is often left to facilitate packaging of the electrolyte, and the area of the blank part is not utilized all the time, so that a considerable amount of space is wasted.
Disclosure of Invention
The invention aims to provide a light pipe interpenetrating internal lighting solar cell, which increases the illumination quantity of a photo-anode film by changing the structure of the photo-anode film, thereby improving the photoelectric conversion efficiency of the solar cell. The blank area lost by the non-photoanode film on the photoanode substrate is fully utilized, sunlight is introduced into the photoanode film through the light guide pipe, and then the photoanode film can receive more sunlight irradiation.
The invention is realized in this way, a new solar battery of light pipe interpenetration internal lighting, mainly by the photoanode basement; a photocathode substrate; and (4) electrolyte composition. The method is characterized in that: the blank position of the substrate on which the photo-anode film is positioned introduces sunlight which does not irradiate the film into the photo-anode film through a light guide pipe; the sunlight is recycled through the optical fibers and does not irradiate the anode film, the sunlight enters the nanometer scattering tube after being totally reflected in the nanometer optical fibers at the two ends, and enters the photo-anode film through the scattering of light in the nanometer scattering tube to form a photo-anode substrate together with the anode film; and with the photocathode substrate; the electrolytes together constitute a solar cell.
The semiconductor film is coated on the photo-anode substrate, then the nano optical fiber is connected with the blank part of the non-semiconductor film, the nano scattering tube is inserted into the semiconductor film, and the two ends of the nano scattering tube are connected with the other end of the nano optical fiber connected with the blank part, so that the light pipe interpenetrating internal illumination film is formed by the nano scattering tube and the anode semiconductor film.
Compared with the existing laboratory test technology, the invention has the following beneficial effects:
1. the sunlight enters the middle nanometer scattering tube after being totally reflected by the nanometer optical fibers at two ends, and the nanometer scattering tube scatters the light to the light anode film, so that the traditional mode that the sunlight irradiates the light anode film is successfully changed.
2. The light pipe is used to construct the light pipe interpenetrating thin film lighting thin film, and the original light-capturing mode of the photo-anode thin film is changed.
3. The light pipe interpenetrating thin film lighting film is introduced to enable the sunlight to irradiate the tail end of the thin film which cannot be irradiated by the original sunlight, and the sunlight full spectrum is introduced into the thin film, so that the sunlight irradiates the tail end of the thin film.
4. The light pipe is used for constructing the light pipe interpenetrating thin film lighting film, can be used for various solar cells, and solves the problem that the photoelectric conversion efficiency is difficult to improve.
Drawings
Fig. 1 is a schematic view of a light guide composed of a nanofiber and a nanodispersion tube.
FIG. 2 is a schematic view of the back side of the photoanode substrate with the light pipe interpenetrating the thin film illumination film.
FIG. 3 is a schematic top view of a photoanode substrate with a light pipe interpenetrating a thin film illumination film.
Fig. 4 is a schematic front view of a novel solar cell with light pipes interpenetrating the interior illumination.
In the figure, 1, a nano optical fiber 2, a nano vacuum tube 3, a photo-anode film 4, a light guide tube 5, a photo-anode substrate 6, a packaging film 7 and a photo-cathode substrate
Detailed Description
As shown in fig. 4, the specific implementation is as follows:
example one:
the photoanode substrate can be coated with a porous titanium dioxide film 3, then the part of the non-porous titanium dioxide film is connected with a nano optical fiber 1, the other end of the optical fiber is connected with a nano vacuum tube 2, the other end of the optical fiber is connected with the optical fiber 1 of the blank area on the other side of the porous titanium dioxide film, the optical fiber is placed in the porous titanium dioxide film 3 and is sensitized in a dye, and the photoanode substrate 5 is formed; platinum is deposited on the other transparent conductive substrate to form a photocathode substrate 7; and placing the packaging film 6 with the shape of the porous titanium dioxide film between two substrates, injecting electrolyte and packaging the two substrates to form the dye-sensitized solar cell with the light guide pipe interpenetrating the film lighting film.
Example two:
preparing a titanium dioxide dense layer and a porous support film on photo-anode conductive glass, preparing a perovskite film absorption layer 3 on the photo-anode conductive glass, then connecting a nano optical fiber 1 on the part of the non-perovskite film, connecting a nano scattering tube 2 on the other end of the optical fiber, connecting the other end of the optical fiber with the optical fiber 1 in a blank area on the other side of the perovskite film, placing the optical fiber and the perovskite film in the perovskite film 3, and combining into a photo-anode substrate 5; and the prepared hole transmission layer and the back electrode form a photocathode substrate 7 to form the perovskite solar cell of the light guide pipe interpenetrating thin film lighting film.
Claims (3)
1. A light pipe interpenetration inner lighting solar battery mainly introduces a light pipe structure, sunlight enters a nanometer scattering pipe to be scattered in a film after being totally reflected in optical fibers through nanometer optical fibers at two ends and a nanometer vacuum pipe in the middle, a semiconductor film is coated on a light anode substrate, then the nanometer optical fibers are connected to a blank part of a non-semiconductor film, the nanometer scattering pipe is inserted in the semiconductor film, two ends of the nanometer scattering pipe are connected with the other end of the nanometer optical fibers connected to the blank part, and therefore the light pipe interpenetration inner lighting film is formed by the light pipe interpenetration inner lighting solar battery and the anode semiconductor film.
2. The light pipe interpenetration internal illumination solar cell of claim 1, which is characterized in that: the light guide pipes and the photo-anode film are combined on the photo-anode substrate through a plurality of groups of light guide pipes, so that sunlight of a non-photo-anode film blank part of the photo-anode is fully utilized and is introduced into the film through the light guide pipes, and the photo-anode film with light guide pipe interpenetration internal illumination is formed.
3. The light pipe interpenetration internal illumination solar cell of claim 1, which is characterized in that: the photo-anode substrate formed by the light guide pipe which is formed by the light guide pipe and interpenetrates the internal illumination light anode film can form a solar cell together with the photo-cathode substrate and the electrolyte, and because the sunlight of the blank part of the photo-anode is introduced to the photo-anode film, the sunlight is scattered in the film, so that a larger photocurrent is generated, and the photoelectric conversion efficiency is improved.
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CN201810870636.XA CN109037377B (en) | 2018-08-02 | 2018-08-02 | Light pipe interpenetrating internal lighting solar cell |
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CN201810870636.XA CN109037377B (en) | 2018-08-02 | 2018-08-02 | Light pipe interpenetrating internal lighting solar cell |
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CN109037377B true CN109037377B (en) | 2020-10-20 |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102254700A (en) * | 2011-05-13 | 2011-11-23 | 西安交通大学 | Light side entry type dye sensitized solar battery pack with laminated structure and manufacturing process thereof |
CN102915852A (en) * | 2012-11-19 | 2013-02-06 | 沈阳航空航天大学 | Dye-sensitized solar cell structure and preparation method thereof |
JP2015227253A (en) * | 2014-05-30 | 2015-12-17 | 国立大学法人 熊本大学 | Graphene dispersion and production method of graphene |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2007117332A2 (en) * | 2005-12-29 | 2007-10-18 | The Board Of Trustees Of The University Of Illinois | Titanium oxide base photocatalysts |
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- 2018-08-02 CN CN201810870636.XA patent/CN109037377B/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102254700A (en) * | 2011-05-13 | 2011-11-23 | 西安交通大学 | Light side entry type dye sensitized solar battery pack with laminated structure and manufacturing process thereof |
CN102915852A (en) * | 2012-11-19 | 2013-02-06 | 沈阳航空航天大学 | Dye-sensitized solar cell structure and preparation method thereof |
JP2015227253A (en) * | 2014-05-30 | 2015-12-17 | 国立大学法人 熊本大学 | Graphene dispersion and production method of graphene |
Non-Patent Citations (1)
Title |
---|
Optical-fiber/TiO2-nanowire-arrays hybrid structures with tubular counterelectrode for dye-sensitized solar cell;Wenxi Guo等;《Nano Energy》;20120131;第1卷(第1期);全文 * |
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