CN109004069A - A kind of production method of metal substrate LED chip - Google Patents
A kind of production method of metal substrate LED chip Download PDFInfo
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- CN109004069A CN109004069A CN201710473735.XA CN201710473735A CN109004069A CN 109004069 A CN109004069 A CN 109004069A CN 201710473735 A CN201710473735 A CN 201710473735A CN 109004069 A CN109004069 A CN 109004069A
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 92
- 239000002184 metal Substances 0.000 title claims abstract description 92
- 239000000758 substrate Substances 0.000 title claims abstract description 75
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 35
- 230000003628 erosive effect Effects 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 13
- 239000007921 spray Substances 0.000 claims description 63
- 239000004065 semiconductor Substances 0.000 claims description 53
- 229920002120 photoresistant polymer Polymers 0.000 claims description 19
- 210000004400 mucous membrane Anatomy 0.000 claims description 16
- 238000002347 injection Methods 0.000 claims description 15
- 239000007924 injection Substances 0.000 claims description 15
- 239000007788 liquid Substances 0.000 claims description 15
- 239000003292 glue Substances 0.000 claims description 11
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 7
- 239000012498 ultrapure water Substances 0.000 claims description 7
- 229910002601 GaN Inorganic materials 0.000 claims description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 239000000908 ammonium hydroxide Substances 0.000 claims description 3
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 claims description 3
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 2
- 150000002576 ketones Chemical class 0.000 claims 1
- 238000003698 laser cutting Methods 0.000 abstract description 9
- 238000005520 cutting process Methods 0.000 abstract description 7
- 230000007797 corrosion Effects 0.000 abstract description 6
- 238000005260 corrosion Methods 0.000 abstract description 6
- 238000005452 bending Methods 0.000 abstract description 4
- 230000035939 shock Effects 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 230000011218 segmentation Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000233 ultraviolet lithography Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
- Weting (AREA)
Abstract
The invention discloses a kind of production methods of metal substrate LED chip to form single LED chip using metal erosion corrosion metal substrate, compared with traditional laser cutting method, production method of the present invention is simple, and operation is easy, the expense for saving purchase laser cutting machine, reduces cost；In addition, cutting metal substrate using laser cutting method, thermal shock is generated to metal substrate, the occurrence of metal substrate is easy to appear sliver and bending, reduces the yield of LED chip, and production method of the invention avoids this, to improve LED chip yield.
Description
Technical field
The present invention relates to a kind of LED technology field more particularly to a kind of production methods of metal substrate LED chip.
Background technique
LED(Light Emitting Diode, light emitting diode) be it is a kind of using Carrier recombination when release energy to form hair
The semiconductor devices of light, LED chip have that power consumption is low, coloration is pure, the service life is long, small in size, response time fast, energy conservation and environmental protection etc. is all
More advantages.
In recent years, as that studies LED chip deepens continuously, technical staff is using different materials to Sapphire Substrate
Transfer replacement is carried out, thus improves the heat dissipation performance of light emitting diode.It is existing since metal substrate has good heating conduction
There is technology generally to carry out substrate transfer using metal substrates such as gold, silver, copper, nickel, but metal self character has ductility,
It is cut in metal substrate LED chip, when forming single LED chip, is easy to appear sliver and bending, reduces product yield,
Therefore the mass production of metal substrate LED chip is restricted.
Summary of the invention
Technical problem to be solved by the present invention lies in, a kind of production method of metal substrate LED chip is provided, convenient for operating,
Yield is high, at low cost, can be mass-produced.
In order to solve the above-mentioned technical problems, the present invention provides a kind of production methods of metal substrate LED chip, comprising:
One metal substrate is provided；
Multiple light emitting structures are formed in the metal substrate surface, the light emitting structure includes being set to the metal substrate surface
First semiconductor layer, set on the active layer and first electrode of first semiconductor layer surface, set on the active layer surface
Second semiconductor layer, set on the second electrode of second semiconductor layer surface, the first electrode and the second electrode it
Between mutually insulated；
In light emitting structure surface coating photoresist, and the photoresist of separating part between the light emitting structure is removed, obtains LED
Wafer；
The LED wafer is fixed on mucous membrane, the mucous membrane is fixed on tiltable mobile platform；
The LED wafer side being fixed in the mobile platform, two groups of spray heads being set, two groups of spray heads include first spray head
And second spray head, there is pre-determined distance between two groups of spray heads and the LED wafer；
The first spray head sprays the LED wafer ultrapure to the LED wafer metal injection corrosive liquid, the second spray head
Water obtains single LED chip；
The first spray head removes glue to LED chip injection, and the second spray head sprays ultrapure water to the LED chip,
Remove the photoresist；
The mucous membrane and the LED chip are dried, and the LED chip is sorted.
Preferably, the forming process of the light emitting structure are as follows:
First semiconductor layer is formed in the metal substrate arbitrary surfaces；
The active layer is formed in first semiconductor layer surface；
Second semiconductor layer is formed in the active layer surface；
It is using etching technics that the predeterminable area of first semiconductor layer surface is exposed；
The first electrode is formed in the predeterminable area of first semiconductor layer surface, and in second semiconductor layer surface
Form the second electrode, mutually insulated between the first electrode and the second electrode.
Preferably, it is 20-80 degree that the mobile platform, which tilts down angle,.
Preferably, it is vertically arranged between two groups of spray heads and the mobile platform.
Preferably, the injection direction met and discussed is adjustable.
Preferably, the distance between described two groups of spray heads, the distance between the spray head and the mobile platform can be adjusted
Section.
Preferably, the material of the metal substrate is one of gold, silver, copper, nickel, molybdenum, tungsten or above several metals.
Preferably, first semiconductor layer and the second semiconductor layer are gallium nitride-based semiconductor, the active layer
For gallium nitride base active layer.
Preferably, the metal erosion liquid be potassium iodide, iron chloride, ammonium hydroxide, hydrogen peroxide, cerium ammonium nitrate, nitric acid, hydrochloric acid,
One of sulfuric acid or the above several solns.
It is preferably, described that remove glue be one of acetone, isopropanol, alcohol, n-methyl-2-pyrrolidone or above several
Kind solution.
The invention has the following beneficial effects:
1, the production method of a kind of metal substrate LED chip provided by the invention, uses metal erosion corrosion metal substrate, shape
At single LED chip, compared with traditional laser cutting method, production method of the present invention is simple, and operation is easy, and saves purchase and swashs
The expense of light cutting machine, reduces cost；In addition, cutting metal substrate using laser cutting method, heat punching is generated to metal substrate
It hits, metal substrate is easy to appear sliver and bending, reduces the yield of LED chip, and production method of the invention avoids this situation
Generation, to improve LED chip yield.
2, the production method of a kind of metal substrate LED chip provided by the invention, it is less to be related to equipment, wherein segmentation gold
The equipment cost for belonging to substrate is low, and mobile platform and spray head are easily operated, and modulability is strong.
3, the production method of a kind of metal substrate LED chip provided by the invention, can only with traditional laser cutting method
Cutting forms rectangular LED chip, and the present invention uses metal erosion corrosion metal substrate, by the photoetching for designing different graphic
Glue can form LED chip of different shapes.
4, the production method of a kind of metal substrate LED chip provided by the invention, the recyclable recycling of the liquid of injection,
Not only environmentally friendly, but also save cost.
Detailed description of the invention
Fig. 1 is a kind of flow chart of the production method of metal substrate LED chip of the embodiment of the present invention；
Fig. 2 a is that the metal substrate LED chip of the embodiment of the present invention forms the structural schematic diagram of multiple light emitting structures；
Fig. 2 b is that the metal substrate LED chip of the embodiment of the present invention forms the structural schematic diagram of LED wafer；
Fig. 2 c is that the LED wafer of the embodiment of the present invention is fixed on mucous membrane and the fixed structural representation on a mobile platform of mucous membrane
Figure；
Fig. 2 d is the structural schematic diagram of two groups of spray heads of the embodiment of the present invention；
Fig. 2 e is that the metal substrate LED chip of the embodiment of the present invention forms the structural schematic diagram of single LED chip；
Fig. 2 f is the structural schematic diagram that the photoresist of the embodiment of the present invention removes；
Fig. 2 g is the structural schematic diagram of the LED chip of the embodiment of the present invention；
Fig. 3 is a kind of flow chart of the production method of light emitting structure provided by the embodiments of the present application.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, the present invention is made further below in conjunction with attached drawing
Detailed description.
A kind of production method of metal substrate LED chip provided by the invention, flow chart is as shown in Figure 1, include following
Step:
S1, a metal substrate is provided.
Metal substrate provided by the embodiments of the present application is one of gold, silver, copper, nickel, molybdenum, tungsten or above several metals；
In addition to above-mentioned metal substrate, metal substrate can also be other metals in the application other embodiments, not do to this application
Concrete restriction.
S2, multiple light emitting structures are formed in the metal substrate surface.
As shown in Figure 2 a, multiple light emitting structures 20 are formed on 10 surface of metal substrate, the light emitting structure 20 includes
The first semiconductor layer 21 set on 10 surface of metal substrate, 22 He of active layer set on 21 surface of the first semiconductor layer
First electrode 211, the second semiconductor layer 23 set on 22 surface of active layer, set on 23 surface of the second semiconductor layer
Second electrode 212, mutually insulated between the first electrode 211 and the second electrode 212.
Specifically, as shown in figure 3, be a kind of flow chart of the production method of light emitting structure provided by the embodiments of the present application,
Wherein, the forming process of light emitting structure are as follows:
S21, the first semiconductor layer is formed on any one surface of metal substrate.
S22, active layer is formed in the first semiconductor layer surface.
S23, the second semiconductor layer is formed in active layer back surface.
Specifically, the first semiconductor layer provided by the embodiments of the present application and the second semiconductor layer are gallium nitride-based semiconductor
Layer, active layer are gallium nitride base active layer；In addition, the first semiconductor layer provided by the embodiments of the present application, the second semiconductor layer and
The material of active layer can also be other materials, be not particularly limited to this application.
Wherein, the first semiconductor layer can be n type semiconductor layer, then the second semiconductor layer is p type semiconductor layer；Alternatively,
First semiconductor layer is p type semiconductor layer, and the second semiconductor layer is n type semiconductor layer, for the first semiconductor layer and second
The conduction type of semiconductor layer needs to be designed according to practical application, is not particularly limited to this application.
It is S24, using etching technics that the predeterminable area of the first semiconductor layer surface is exposed.
Predeterminable area is the region for forming first electrode, wherein and the area of first electrode is less than the area of predeterminable area,
The laminations such as first electrode and active layer, the second semiconductor layer are avoided to contact.Etching technics provided by the embodiments of the present application can be
Dry etch process, or wet-etching technology is not particularly limited this application, needs to be carried out according to practical application
It chooses.
S25, the predeterminable area formation first electrode in the first semiconductor layer surface, and formed in the second semiconductor layer surface
Second electrode, mutually insulated between first electrode and second electrode.
S3, in light emitting structure surface coating photoresist, and remove the photoresist of separating part between the light emitting structure,
Obtain LED wafer.
As shown in Figure 2 b, the light emitting structure 20 is placed on rotary coating machine, it is equal on the light emitting structure surface
One layer photoresist 30 of even coating, using ultraviolet lithography machine to the photoresist 30 carry out photoetching, remove the light emitting structure it
Between separating part 31 photoresist, default separating part 31 is exposed, LED wafer is obtained.
Specifically, design needs of the photoresist according to LED chip, form the photoresist of corresponding pattern, shape is being applied
In the present embodiment, the pattern of photoresist is not particularly limited.
Specifically, the photoresist protects the light emitting structure, below the step of in, prevent metal erosion liquid to shining
Structure is corroded, and the photoelectric properties of light emitting structure are influenced.
It should be noted that the embodiment of the present application does not do specifically the arrangement of the separating part between light emitting structure and shape
Limitation, needs this to be designed according to the needs of practical application.
S4, the LED wafer is fixed on mucous membrane, the mucous membrane is fixed on tiltable mobile platform.
As shown in Figure 2 c, being fixed on the LED wafer on mucous membrane 40, the mucous membrane 40 are fixed on tiltable movement
On platform 50.Specifically, the mucous membrane two sides all has viscosity, the light emitting structure and institute's mobile platform are formed into fixed company
It connects.In addition, in the application other embodiments, the light emitting structure can also be formed with institute mobile platform using other modes
It is fixedly connected, this application is not particularly limited.Wherein, the mobile platform carries out horizontal linear movement, passes through mobile institute
Mobile platform is stated, the solution for ejecting spray head is injected in the place for needing to spray, and reduces injecting time, saves solution.This
Outside, it is 20-80 degree that the mobile platform, which tilts down angle,.In the present embodiment, the mobile platform tilts down angle most
Excellent is 45 degree, below the step of in, when liquid injection is on the light emitting structure, extra liquid along it is inclined move it is flat
Platform flows to recyclable device, reusable using purification, not only environmentally friendly, but also saves cost.
S5, two groups of spray heads of the light emitting structure side setting are fixed in the mobile platform, two groups of spray heads include
First spray head and second spray head have pre-determined distance between two groups of spray heads and the light emitting structure.
As shown in Figure 2 d, the LED wafer side being fixed in the mobile platform 50, two groups of spray heads 60 are set, described two
Group spray head 60 includes first spray head 61 and second spray head 62.Specifically, described two groups are met and discussed and 60 are had with the mobile platform 50
A certain distance, the material of thickness and metal substrate with specific reference to light emitting structure position two groups of spray heads and mobile platform
The distance between.Wherein, the injection direction of the spray head 60 is adjustable, when ejected between when extending, pass through and adjust spray head
Injection direction avoids solution concentration from being injected on a certain position.Between the first spray head 61 and the second spray head 62 away from
From adjustable, first spray head and institute are adjusted with specific reference to the distance between the size of the light emitting structure, the light emitting structure
State the distance between second spray head, below the step of in, make solution fully with the metal substrate and the light emitting structure
Contact.Specifically, be vertically arranged between two groups of spray heads and the mobile platform, below the step of in, keep solution abundant
Ground is contacted with the metal substrate and the light emitting structure.In the other embodiments of the application, as needed, settable multiple groups
Spray head, the sprayable a variety of solution of spray head.
S6, the first spray head are to the LED wafer metal injection corrosive liquid, and the second spray head is to the LED wafer
Ultrapure water is sprayed, single LED chip is formed.
As shown in Figure 2 e, the first spray head 61 is to the LED wafer metal injection corrosive liquid, metal erosion liquid edge
Separating part between light emitting structure 20 enter the metal substrate 10, the exposed gold in separating part of metal erosion corrosion
Belong to substrate, the exposed metal substrate in separating part is corroded segmentation, forms list LED chip, and the second spray head 62 is right
The LED wafer sprays ultrapure water, cleans the metal erosion liquid being attached on light emitting structure and avoids residue in step below
Metal erosion liquid reacted with glue is removed, influence the removal of photoresist, thus avoid influence LED chip photoelectric properties.Specifically
, the ultrapure water be resistivity reach 18M Ω * cm(25 DEG C) water, the metal erosion liquid include but is not limited to potassium iodide,
One of iron chloride, ammonium hydroxide, hydrogen peroxide, cerium ammonium nitrate, nitric acid, hydrochloric acid, sulfuric acid or the above several solns.
S7, the first spray head remove glue to LED chip injection, and the second spray head sprays the LED chip
Ultrapure water removes the photoresist.
As shown in figure 2f, the first spray head 61 removes glue to the LED chip 20 injection, removes on light emitting structure 20
Photoresist 30, then two spray head 62 to the LED chip 20 spray ultrapure water, cleaning be attached on light emitting structure 20
Glue is removed, the photoelectric properties for influencing LED chip are avoided.It is preferably, described that remove glue include but is not limited to acetone, isopropanol, wine
One of essence, n-methyl-2-pyrrolidone or the above several solns.
S8, the mucous membrane and the LED chip are dried, and the LED chip is sorted.
As shown in Figure 2 g, the mucous membrane 40 and the LED chip are dried, the mucous membrane during drying,
Viscosity is lost, is separated automatically with the LED chip, is sorted by sorting machine according to the photoelectric properties of LED chip.
The invention has the following beneficial effects:
1, the production method of a kind of metal substrate LED chip provided by the invention, uses metal erosion corrosion metal substrate, shape
At single LED chip, compared with traditional laser cutting method, production method of the present invention is simple, and operation is easy, and saves purchase and swashs
The expense of light cutting machine, reduces cost；In addition, cutting metal substrate using laser cutting method, heat punching is generated to metal substrate
It hits, metal substrate is easy to appear sliver and bending, reduces the yield of LED chip, and production method of the invention avoids this situation
Generation, to improve LED chip yield.
2, the production method of a kind of metal substrate LED chip provided by the invention, it is less to be related to equipment, wherein segmentation gold
The equipment cost for belonging to substrate is low, and mobile platform and spray head are easily operated, and modulability is strong.
3, the production method of a kind of metal substrate LED chip provided by the invention, can only with traditional laser cutting method
Cutting forms rectangular LED chip, and the present invention uses metal erosion corrosion metal substrate, by the photoetching for designing different graphic
Glue can form LED chip of different shapes.
4, the production method of a kind of metal substrate LED chip provided by the invention, the recyclable recycling of the liquid of injection,
Not only environmentally friendly, but also save cost.
Above disclosed is only a preferred embodiment of the present invention, cannot limit the power of the present invention with this certainly
Sharp range, therefore equivalent changes made in accordance with the claims of the present invention, are still within the scope of the present invention.
Claims (10)
1. a kind of production method of metal substrate LED chip, comprising:
One metal substrate is provided；
Multiple light emitting structures are formed in the metal substrate surface, the light emitting structure includes being set to the metal substrate surface
First semiconductor layer, set on the active layer and first electrode of first semiconductor layer surface, set on the active layer surface
Second semiconductor layer, set on the second electrode of second semiconductor layer surface, the first electrode and the second electrode it
Between mutually insulated；
In light emitting structure surface coating photoresist, and the photoresist of separating part between the light emitting structure is removed, obtains LED
Wafer；
The LED wafer is fixed on mucous membrane, the mucous membrane is fixed on tiltable mobile platform；
The LED wafer side being fixed in the mobile platform, two groups of spray heads being set, two groups of spray heads include first spray head
And second spray head, there is pre-determined distance between two groups of spray heads and the LED wafer；
The first spray head sprays the LED wafer ultrapure to the LED wafer metal injection corrosive liquid, the second spray head
Water obtains single LED chip；
The first spray head removes glue to LED chip injection, and the second spray head sprays ultrapure water to the LED chip,
Remove the photoresist；
The mucous membrane and the LED chip are dried, and the LED chip is sorted.
2. the production method of metal substrate LED chip according to claim 1, which is characterized in that the light emitting structure
Forming process are as follows:
First semiconductor layer is formed in the metal substrate arbitrary surfaces；
The active layer is formed in first semiconductor layer surface；
Second semiconductor layer is formed in the active layer surface；
It is using etching technics that the predeterminable area of first semiconductor layer surface is exposed；
The first electrode is formed in the predeterminable area of first semiconductor layer surface, and in second semiconductor layer surface
Form the second electrode, mutually insulated between the first electrode and the second electrode.
3. the production method of metal substrate LED chip according to claim 1, which is characterized in that the mobile platform to
Lower tilt angle is 20-80 degree.
4. the production method of metal substrate LED chip according to claim 1, which is characterized in that two groups of spray heads with
It is vertically arranged between the mobile platform.
5. the production method of metal substrate LED chip according to claim 1, which is characterized in that the injection met and discussed
Direction is adjustable.
6. the production method of metal substrate LED chip according to claim 1, which is characterized in that two groups of spray heads it
Between distance it is adjustable, the distance between the spray head and the mobile platform are adjustable.
7. the production method of metal substrate LED chip according to claim 1, which is characterized in that the metal substrate
Material is one of gold, silver, copper, nickel, molybdenum, tungsten or above several metals.
8. the production method of metal substrate LED chip according to claim 1, which is characterized in that first semiconductor
Layer and second semiconductor layer are gallium nitride-based semiconductor, and the active layer is gallium nitride base active layer.
9. the production method of metal substrate LED chip according to claim 1, which is characterized in that the metal erosion liquid
For one of potassium iodide, iron chloride, ammonium hydroxide, hydrogen peroxide, cerium ammonium nitrate, nitric acid, hydrochloric acid, sulfuric acid or the above several solns.
10. the production method of metal substrate LED chip according to claim 1, which is characterized in that it is described go glue be third
One of ketone, isopropanol, alcohol, n-methyl-2-pyrrolidone or the above several solns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710473735.XA CN109004069B (en) | 2017-06-21 | 2017-06-21 | Manufacturing method of metal substrate LED chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710473735.XA CN109004069B (en) | 2017-06-21 | 2017-06-21 | Manufacturing method of metal substrate LED chip |
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| Publication Number | Publication Date |
|---|---|
| CN109004069A true CN109004069A (en) | 2018-12-14 |
| CN109004069B CN109004069B (en) | 2020-10-27 |
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| CN201710473735.XA Active CN109004069B (en) | 2017-06-21 | 2017-06-21 | Manufacturing method of metal substrate LED chip |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101840965A (en) * | 2009-05-08 | 2010-09-22 | 晶能光电（江西）有限公司 | Method for cutting substrate of light emitting diode manufactured on metallic substrate |
| CN204230209U (en) * | 2014-09-23 | 2015-03-25 | 安徽省大富光电科技有限公司 | Etch, develop, clean and take off film device, spray treatment facility |
| CN104737285A (en) * | 2012-09-28 | 2015-06-24 | 等离子瑟姆有限公司 | Method for dicing a substrate with back metal |
| CN104752571A (en) * | 2013-12-31 | 2015-07-01 | 晶能光电（江西）有限公司 | Cutting method of wafer grade white-light LED chip |
| CN105140167A (en) * | 2015-07-28 | 2015-12-09 | 合肥鑫晟光电科技有限公司 | Carrying device, wet etching equipment and application method of wet etching equipment |
| CN205177793U (en) * | 2015-10-09 | 2016-04-20 | 上海天马有机发光显示技术有限公司 | Etching board |
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2017
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101840965A (en) * | 2009-05-08 | 2010-09-22 | 晶能光电（江西）有限公司 | Method for cutting substrate of light emitting diode manufactured on metallic substrate |
| CN104737285A (en) * | 2012-09-28 | 2015-06-24 | 等离子瑟姆有限公司 | Method for dicing a substrate with back metal |
| CN104752571A (en) * | 2013-12-31 | 2015-07-01 | 晶能光电（江西）有限公司 | Cutting method of wafer grade white-light LED chip |
| CN204230209U (en) * | 2014-09-23 | 2015-03-25 | 安徽省大富光电科技有限公司 | Etch, develop, clean and take off film device, spray treatment facility |
| CN105140167A (en) * | 2015-07-28 | 2015-12-09 | 合肥鑫晟光电科技有限公司 | Carrying device, wet etching equipment and application method of wet etching equipment |
| CN205177793U (en) * | 2015-10-09 | 2016-04-20 | 上海天马有机发光显示技术有限公司 | Etching board |
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